CN219603763U - Single crystal furnace and argon rectification mechanism thereof - Google Patents
Single crystal furnace and argon rectification mechanism thereof Download PDFInfo
- Publication number
- CN219603763U CN219603763U CN202320575664.5U CN202320575664U CN219603763U CN 219603763 U CN219603763 U CN 219603763U CN 202320575664 U CN202320575664 U CN 202320575664U CN 219603763 U CN219603763 U CN 219603763U
- Authority
- CN
- China
- Prior art keywords
- argon
- rectifying
- rectification
- auxiliary chamber
- rectification mechanism
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Active
Links
Classifications
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
- Y02P70/00—Climate change mitigation technologies in the production process for final industrial or consumer products
- Y02P70/50—Manufacturing or production processes characterised by the final manufactured product
Abstract
The utility model discloses an argon rectification mechanism, which is used for being installed in a secondary chamber of a single crystal furnace and comprises the following components: a plurality of rectifying banners; and a rectifying channel is formed between two adjacent rectifying scroll bars, the first end of the rectifying channel is communicated with the argon gas port of the auxiliary chamber, and the second end of the rectifying channel is communicated with the bottom of the auxiliary chamber. According to the scheme, the rectifying channel is arranged, so that the loss of outward diffusion of argon in the process of blowing the argon to the molten silicon liquid level is avoided, the argon quantity is sufficient when the argon reaches the molten silicon liquid level, the capability of taking away impurities is improved, and the quality of the prepared monocrystalline silicon is improved to some extent. The utility model also discloses a single crystal furnace using the argon rectification mechanism.
Description
Technical Field
The utility model relates to the technical field of solar photovoltaic, in particular to a single crystal furnace and an argon rectification mechanism thereof.
Background
Along with the high-speed development of the photovoltaic industry, higher requirements are put forward on the technology of the whole photovoltaic industry chain, and the quality of the monocrystalline silicon rod directly determines the performance of the solar photovoltaic cell, so that each manufacturer gradually improves the research and development force on the quality of the monocrystalline silicon rod, and the efficiency of a battery assembly is ensured.
Currently, monocrystalline silicon is mainly prepared through a monocrystalline furnace, and an argon port in the monocrystalline furnace is arranged at the top end of a secondary chamber and the top end of a main chamber. Only the argon port at the top end of the auxiliary chamber is used in the crystal growth stage, and the main function of the argon port at the top end of the auxiliary chamber is to regulate the pressure in the furnace when the state in the furnace is not in the crystal growth stage. In the process of preparing monocrystalline silicon, argon enters from an argon port at the top end of the auxiliary chamber, passes through the cavity of the auxiliary chamber and blows downwards along the inner wall of the cavity, part of argon diffuses outwards from the crucible before reaching the molten liquid, cannot completely reach the liquid level, the capability of taking away impurities is weakened, and the quality of the silicon rod cannot be improved.
Therefore, how to avoid the diffusion of argon out of the crucible before reaching the melt is an important technical problem to be solved by the person skilled in the art.
Disclosure of Invention
In view of the above, the utility model provides an argon rectification mechanism, which is characterized in that an argon rectification mechanism is arranged in a secondary chamber of a single crystal furnace to form a rectification channel, so that argon reaches the molten liquid level through the rectification channel, and the quality of a single crystal silicon rod is improved.
The utility model also provides a single crystal furnace comprising the argon rectification mechanism.
In order to achieve the above purpose, the present utility model provides the following technical solutions:
an argon rectification mechanism for installation in a secondary chamber of a single crystal furnace, comprising: a plurality of rectifying banners; and a rectifying channel is formed between two adjacent rectifying scroll bars, the first end of the rectifying channel is communicated with the argon gas port of the auxiliary chamber, and the second end of the rectifying channel is communicated with the bottom of the auxiliary chamber.
Preferably, a plurality of said rectifying spokes are each parallel to the axial direction of said auxiliary chamber.
Preferably, a plurality of said rectifying spokes are uniformly distributed along the circumferential direction of said sub-chamber.
Preferably, the width of the rectifying banner is equal to the width of the rectifying channel.
Preferably, the number of the rectifying banners is 5-15.
Preferably, the first end of the rectifying banner is located at the top of the secondary chamber and the second end is located at the bottom of the secondary chamber.
Preferably, the cross-sectional shape of the rectifying banner is rectangular or square.
Preferably, the method further comprises: a connecting piece; the first ends of the rectifying banners are connected to the connecting piece, and the connecting piece is arranged at the top of the auxiliary chamber.
Preferably, the connecting piece is of a circular ring structure, and the outer diameter of the connecting piece is matched with the inner diameter of the top of the auxiliary chamber.
A single crystal furnace, comprising: a sub-chamber; comprising the following steps: such as the argon rectification mechanism described above.
According to the technical scheme, the argon rectification mechanism provided by the utility model has the advantages that the rectification channel is arranged, argon enters the auxiliary chamber to be rectified through the rectification channel, and is blown to the molten silicon liquid surface along the direction of the rectification channel, so that the loss of outward diffusion of the argon in the process of blowing to the molten silicon liquid surface is avoided, the argon quantity is sufficient when the argon reaches the molten silicon liquid surface, the capability of taking away impurities is improved, and the quality of the prepared monocrystalline silicon is improved.
The utility model also provides a single crystal furnace, which has the corresponding beneficial effects due to the adoption of the argon rectification mechanism, and the description can be referred to in the prior art, and the description is omitted here.
Drawings
In order to more clearly illustrate the embodiments of the utility model or the technical solutions in the prior art, the drawings that are required in the embodiments or the description of the prior art will be briefly described, it being obvious that the drawings in the following description are only some embodiments of the utility model, and that other drawings may be obtained according to these drawings without inventive effort for a person skilled in the art.
Fig. 1 is a schematic front view of an argon rectification mechanism according to an embodiment of the present utility model;
fig. 2 is a schematic diagram of an axial measurement structure of an argon rectification mechanism according to an embodiment of the present utility model;
wherein, 1-connecting piece, 2-rectification banner.
Detailed Description
First, the technical terms involved in the scheme are explained as follows:
a main room: the silicon crystal growth is carried out after the silicon material is placed in the quartz crucible and is melted into silicon liquid by heating.
The auxiliary chamber is a space for storing the silicon rod, and the monocrystalline silicon continuously grows in the main chamber, grows to a certain length to form the silicon rod, and is gradually pulled to the auxiliary chamber for cooling and storage.
Molten silicon: the silicon material is melted after being heated by a heater, and silicon liquid is formed.
The following description of the embodiments of the present utility model will be made clearly and completely with reference to the accompanying drawings, in which it is apparent that the embodiments described are only some embodiments of the present utility model, but not all embodiments. All other embodiments, which can be made by those skilled in the art based on the embodiments of the utility model without making any inventive effort, are intended to be within the scope of the utility model.
The embodiment of the utility model provides an argon rectification mechanism, as shown in fig. 1, for being installed in a secondary chamber of a single crystal furnace, comprising: a plurality of rectifying banners 2; and a rectifying channel is formed between two adjacent rectifying scroll 2, the first end of the rectifying channel is communicated with the argon port of the auxiliary chamber, and the second end of the rectifying channel is communicated with the bottom of the auxiliary chamber.
The working principle of the utility model is as follows: argon is blown into the auxiliary chamber from an argon port of the auxiliary chamber, and as a rectifying channel is formed between two adjacent rectifying scroll 2 in the auxiliary chamber, the argon enters from the top of the auxiliary chamber, and is divided into a plurality of rectifying channels when being blown downwards along the inner wall of the auxiliary chamber, and is blown to the molten silicon liquid level along the rectifying channels. The loss of outward diffusion of argon in the process of blowing the argon to the molten silicon liquid level is avoided, so that the argon quantity is sufficient when the argon reaches the molten silicon liquid level, the capability of taking away impurities is improved, and the quality of the prepared monocrystalline silicon is improved.
In particular, a plurality of said rectifying webs 2 are each parallel to the axial direction of said secondary chamber.
The rectifying channel is parallel to the axial direction of the auxiliary chamber, and argon is vertically blown to the molten silicon liquid level when passing through the rectifying channel. Further, the cross-sectional areas of the rectifying channels formed by the rectifying spokes 2 are different or the same, and after the argon passes through the rectifying channels, the flow rate of the argon passing through each rectifying channel is different or the same.
Specifically, the plurality of rectifying webs 2 are uniformly distributed along the circumferential direction of the sub-chamber.
The cross-sectional areas of the rectification channels are equal, and the flow of argon passing through each rectification channel is the same after the argon passes through the rectification channel. Further, the plurality of rectifying spokes 2 are parallel or inclined to the axial direction of the auxiliary chamber, and the rectifying channels are parallel or inclined to the axial direction of the auxiliary chamber, and the argon gas is blown to the molten silicon liquid level vertically or obliquely after passing through the rectifying channels.
Specifically, the width of the rectifying banner 2 is equal to the width of the rectifying channel. The width of the rectifying banner 2 and the width of the rectifying channel may be adjusted according to actual needs, and are not limited herein.
Specifically, the number of the rectifying banners 2 is 5-15. Further, 12 pieces of the rectifying banner 2 may be selected, and the number of the rectifying banner 2 may be adjusted according to actual needs, which is not limited herein.
Specifically, the rectifying banner 2 has a first end located at the top of the secondary chamber and a second end located at the bottom of the secondary chamber. Ensuring that argon enters the rectifying channel from the top of the auxiliary chamber, and that argon leaves the rectifying channel from the bottom of the auxiliary chamber.
In particular, the cross-sectional shape of the rectifying banner 2 is rectangular or square. Further cross-sectional shapes are rectangular, square, semicircular and conical, and cross-sections of other shapes can be selected according to actual needs, but the cross-sectional shapes are not limited in this respect.
Specifically, the method further comprises the following steps: a connecting piece 1; the first ends of the rectifying banners 2 are connected to the connecting piece 1, and the connecting piece 1 is arranged at the top of the auxiliary chamber. The connector 1 serves as a connection. A plurality of said rectifying webs 2 are connected together to form a plurality of said rectifying channels.
Specifically, the connecting piece 1 is in a circular ring structure, and the outer diameter of the connecting piece 1 is matched with the inner diameter of the top of the auxiliary chamber. Because the auxiliary chamber is of a cylindrical structure, the connecting piece 1 is of a circular ring structure, and the connecting piece 1 is conveniently arranged at the top of the auxiliary chamber.
The embodiment of the utility model also provides a single crystal furnace, which comprises: a sub-chamber; comprising the following steps: such as the argon rectification mechanism described above. Because the scheme adopts the argon rectification mechanism, the argon rectification mechanism has corresponding beneficial effects, and the description can be referred to in the prior art, and the description is omitted here.
The present solution is further described below in connection with specific embodiments:
according to the scheme, the argon rectification mechanism is arranged on the inner wall of the auxiliary chamber, when argon is blown downwards along the inner wall of the auxiliary chamber, the argon is divided into a plurality of channels, the argon is directionally blown to the liquid level of molten silicon along the channels, the argon is prevented from diffusing outwards of the crucible, the capability of taking away impurities by the argon is enhanced, and the quality of monocrystalline silicon is improved.
As shown in fig. 1 and 2, the design height of the mechanism is the same as that of the auxiliary chamber, the top of the mechanism is fixed at the top of the auxiliary chamber, the mechanism is mounted close to the inner wall of the auxiliary chamber, a gap is reserved between the scroll bars, and a rectifying channel is formed between the scroll bars and the inner wall of the auxiliary chamber.
Argon is blown downwards from the top of the device and is bound by a rectifying channel formed by the scroll and the inner wall of the auxiliary chamber, and is blown to the liquid level of molten silicon according to the channel direction, so that the loss of outward diffusion of the argon when the argon is blown to the liquid level is avoided, the capability of taking away impurities is improved, and the quality of the prepared monocrystalline silicon is improved to some extent.
In summary, the embodiment of the utility model provides a single crystal furnace and an argon rectification mechanism thereof, which are characterized in that an argon rectification channel is designed to enable argon to directionally blow to the liquid level of molten silicon. The scheme has the advantages that the upper argon is rectified, the argon flow of the liquid level of the molten silicon is enhanced, more impurities are taken away, and the monocrystalline silicon with higher quality is obtained.
In the present specification, each embodiment is described in a progressive manner, and each embodiment is mainly described in a different point from other embodiments, and identical and similar parts between the embodiments are all enough to refer to each other.
The previous description of the disclosed embodiments is provided to enable any person skilled in the art to make or use the present utility model. Various modifications to these embodiments will be readily apparent to those skilled in the art, and the generic principles defined herein may be applied to other embodiments without departing from the spirit or scope of the utility model. Thus, the present utility model is not intended to be limited to the embodiments shown herein but is to be accorded the widest scope consistent with the principles and novel features disclosed herein.
Claims (10)
1. An argon rectification mechanism for installation in a secondary chamber of a single crystal furnace, comprising: a plurality of rectifying banners (2);
and a rectifying channel is formed between two adjacent rectifying scroll (2), the first end of the rectifying channel is communicated with the argon port of the auxiliary chamber, and the second end of the rectifying channel is communicated with the bottom of the auxiliary chamber.
2. An argon rectification mechanism as claimed in claim 1, characterized in that a plurality of said rectification bars (2) are each parallel to the axial direction of said secondary chamber.
3. An argon rectification mechanism as claimed in claim 1, characterized in that a plurality of said rectification banners (2) are uniformly distributed along the circumferential direction of said auxiliary chamber.
4. Argon rectification mechanism according to claim 1, characterized in that the width of the rectification banner (2) is equal to the width of the rectification channel.
5. An argon rectification mechanism as claimed in claim 1, characterized in that the number of rectification banners (2) is 5-15.
6. An argon rectification mechanism as claimed in claim 1, characterized in that the rectification banner (2) has a first end at the top of the secondary chamber and a second end at the bottom of the secondary chamber.
7. Argon rectification mechanism according to claim 1, characterized in that the rectification bar (2) has a rectangular cross-sectional shape.
8. The argon rectification mechanism of claim 1, further comprising: a connecting piece (1);
the first ends of the rectifying banners (2) are connected to the connecting piece (1), and the connecting piece (1) is arranged at the top of the auxiliary chamber.
9. The argon rectification mechanism as claimed in claim 8, wherein the connecting piece (1) is of a circular ring structure, and the outer diameter of the connecting piece (1) is matched with the inner diameter of the top of the auxiliary chamber.
10. A single crystal furnace, comprising: a sub-chamber; an argon rectification mechanism as claimed in any one of claims 1 to 9.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202320575664.5U CN219603763U (en) | 2023-03-22 | 2023-03-22 | Single crystal furnace and argon rectification mechanism thereof |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202320575664.5U CN219603763U (en) | 2023-03-22 | 2023-03-22 | Single crystal furnace and argon rectification mechanism thereof |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN219603763U true CN219603763U (en) | 2023-08-29 |
Family
ID=87744321
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN202320575664.5U Active CN219603763U (en) | 2023-03-22 | 2023-03-22 | Single crystal furnace and argon rectification mechanism thereof |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN219603763U (en) |
-
2023
- 2023-03-22 CN CN202320575664.5U patent/CN219603763U/en active Active
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| CN214736204U (en) | Guide cylinder and guide assembly | |
| CN210657216U (en) | Diameter-variable guide cylinder for single crystal furnace | |
| CN219603763U (en) | Single crystal furnace and argon rectification mechanism thereof | |
| CN205893453U (en) | Guide cylinder for single crystal furnaces | |
| CN205839185U (en) | A kind of special-shaped guide shell structure | |
| CN206902281U (en) | A kind of single crystal growing furnace | |
| CN201254524Y (en) | Novel glass fiber forming drawing platinum-rhodium alloy bushing plate | |
| CN206799790U (en) | Single crystal growing furnace | |
| CN110438559B (en) | Diameter-variable guide cylinder for single crystal furnace | |
| CN210886316U (en) | Polysilicon ingot casting thermal field heat insulation cage | |
| CN212560517U (en) | Quartz tube reaction chamber with preheating function | |
| CN114934313A (en) | Thermal field for reducing breakage rate of monocrystalline silicon in equal-diameter production process | |
| CN213538158U (en) | Carbon fiber draft tube convenient to installation | |
| CN211814171U (en) | A wire drawing device for producing microfiber glass is cotton | |
| CN211199468U (en) | Lifting device for accelerating cooling of thermal field and single crystal furnace | |
| CN214244666U (en) | Heat exchange device and single crystal furnace | |
| CN201381378Y (en) | Quartz furnace tube for preparing solar battery | |
| CN201183770Y (en) | Glass melting furnace for pressure reducing clarification technology | |
| CN211546716U (en) | Heat preservation structure and vertical pulling single crystal furnace | |
| CN113481589A (en) | Cooling device for simultaneously drawing multiple silicon cores by using crushed silicon materials | |
| CN114381795A (en) | Water-cooled screen device of czochralski crystal growing furnace and single crystal growing furnace | |
| CN208567544U (en) | Corrugated cone cylinder water cooling equipment in one kind | |
| CN219951297U (en) | Device for reducing oxygen content of single crystal bar | |
| CN215887304U (en) | Heating device | |
| CN219621305U (en) | Guide cylinder for single crystal furnace and single crystal furnace |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| GR01 | Patent grant | ||
| GR01 | Patent grant |