CN219547068U

CN219547068U - Ion source cleaning mechanism for magnetic control winding coating film

Info

Publication number: CN219547068U
Application number: CN202320146660.5U
Authority: CN
Inventors: 蔡达; 徐安; 王亚晔; 关治军
Original assignee: Suzhou Victory Precision Manufacture Co Ltd
Current assignee: Suzhou Victory Precision Manufacture Co Ltd
Priority date: 2023-02-03
Filing date: 2023-02-03
Publication date: 2023-08-18
Anticipated expiration: 2033-02-03

Abstract

The utility model discloses an ion source cleaning mechanism for magnetron winding coating, which is used for a magnetron sputtering winding coating machine, wherein the magnetron sputtering winding coating machine comprises a cold roller and an ion source cleaning mechanism arranged on the radial outer side of the cold roller, the ion source cleaning mechanism comprises a plurality of ion source components which are circumferentially arranged along the cold roller, and the ion source components are arranged in an arc-shaped structure matched with the cold roller. The ion source cleaning mechanism for the magnetic control winding coating provided by the utility model can improve the cleaning capability and range, thereby improving the adhesive force of the magnetic control coating.

Description

Ion source cleaning mechanism for magnetic control winding coating film

Technical Field

The utility model relates to the technical field of magnetic control coating, in particular to an ion source cleaning mechanism for magnetic control winding coating.

Background

At present, the composite copper foil is prepared by winding a magnetic control plating film and water plating, wherein the magnetic control plating film is used as a first plating film, the adhesive force is an important index for testing the performance of a machine, a plurality of links relate to the adhesive force, the cleaning effect of an ion source is an important link for controlling the adhesive force of the plating film, and the patent is practical innovation under the background.

In the two-step method, since the water plating is mainly thickened, the adhesion of the composite material layer is mainly affected by the underlying copper film, namely, magnetron sputtering copper.

In magnetron sputtering, a linear ion source is used for cleaning a film substrate, and the main principle of the linear ion source is that argon atoms are impacted by electrons to ionize, so that argon ions and electrons are generated. Argon ions impact the substrate under the action of a direct current electric field to play a role in cleaning; while electrons are confined in the magnetic field racetrack and repeatedly strike argon atoms, creating new argon ions.

As shown in fig. 1, the ion source 200 in the prior art is disposed at the radial outer side of the chill roll 100, the ion source 200 is disposed along a plane, the cleaning effective area of the ion source 200 is small, and the cleaning capability cannot meet the adhesion requirement of magnetron sputtering copper plating.

The utility model is achieved by improving the cleaning capability of the ion source and improving the adhesive force of the magnetron sputtering coating.

Disclosure of Invention

The utility model aims to provide an ion source cleaning mechanism for magnetic control winding coating film, which can improve the cleaning capability and range of an ion source.

Based on the problems, the technical scheme provided by the utility model is as follows:

the ion source cleaning mechanism is used for a magnetron sputtering winding coating machine and comprises a cold roller and an ion source cleaning mechanism arranged on the radial outer side of the cold roller, the ion source cleaning mechanism comprises a plurality of ion source components which are circumferentially arranged along the cold roller, and the ion source components are arranged in an arc-shaped structure matched with the cold roller.

In some embodiments, the central angle of the arc-shaped structure of the plurality of ion source components is 15-25 degrees.

In some embodiments, the ion source assembly includes a support body, a magnet disposed within the support body, a gas channel disposed within the support body, a first magnetic permeable plate coupled to a first magnetic pole of the magnet, and a second magnetic permeable plate coupled to a second magnetic pole of the magnet, the first magnetic permeable plate being disposed opposite the second magnetic permeable plate to form a plasma region at a gas outlet of the gas channel.

In some embodiments, the ion source assembly further comprises a third magnetic permeable plate connecting the second pole of the magnet, a fourth magnetic permeable plate connecting the second magnetic permeable plate and the third magnetic permeable plate.

In some embodiments, the ion source assembly further comprises a first grid and a second grid mounted between the gas outlet of the gas channel and the cold roller and arranged at intervals, the first grid being connected to the positive potential of the first power supply, and the second grid being connected to the negative potential of the second power supply.

In some embodiments, the first grid and the second grid are arranged in an arc shape, and the central angle of the arc is 18-22 degrees.

In some embodiments, the thickness of the first grid and the second grid is 0.8 mm-1.5 mm, and the aperture is 5 mm-8 mm.

In some embodiments, the first grid and the second grid are spaced apart by 3-5 mm.

In some of these embodiments, the first mesh is fixed to the second magnetically permeable plate via a ceramic.

In some of these embodiments, the ion source assembly further comprises a cooling water tube disposed within the support body.

Compared with the prior art, the utility model has the advantages that:

the ion source cleaning structure comprises a plurality of ion source components which are arranged in an arc-shaped structure along the circumferential direction of the cold roller, so that the cleaning effective area and the cleaning capability of the ion source can be improved, the adhesive force of magnetron sputtering copper plating is improved, and the quality of a composite copper foil product is improved.

Drawings

In order to more clearly illustrate the technical solutions of the embodiments of the present utility model, the drawings that are needed in the description of the embodiments will be briefly described below, in which the drawings are only some embodiments of the present utility model, and other drawings can be obtained according to these drawings without inventive effort for a person skilled in the art.

FIG. 1 is a schematic diagram of an ion source in the prior art;

FIG. 2 is a schematic view of an ion source cleaning mechanism for magnetically controlled winding coating according to an embodiment of the present utility model;

wherein:

100. a cold roller; 200. an ion source;

1. a cold roller;

2. an ion source assembly; 2-1, a support; 2-1a, gas channel; 2-2, a magnet; 2-3, a first magnetic conduction plate; 2-4, a second magnetic conduction plate; 2-5, a third magnetic conduction plate; 2-6, a fourth magnetic conduction plate; 2-7, a first grid; 2-8, a second grid mesh; 2-9, ceramic; 2-10, cooling water pipe.

Detailed Description

The above-described aspects are further described below in conjunction with specific embodiments. It should be understood that these examples are illustrative of the present utility model and are not intended to limit the scope of the present utility model. The implementation conditions used in the examples may be further adjusted according to the conditions of the specific manufacturer, and the implementation conditions not specified are generally those in routine experiments.

Referring to fig. 2, for a schematic structural diagram of an embodiment of the present utility model, an ion source cleaning mechanism for magnetron winding coating is provided, and the ion source cleaning mechanism is used for a magnetron sputtering winding coating machine, where the magnetron sputtering winding coating machine includes an unreeling mechanism, a reeling mechanism, a cold roller 1 disposed between the unreeling mechanism and the reeling mechanism, and an ion source cleaning mechanism disposed radially outside the cold roller 1.

In this example, the ion source cleaning mechanism includes two ion source components 2 arranged along the circumferential direction of the cold roller 1, and the two ion source components 2 are arranged in an arc structure matched with the cold roller 1, and the central angle of the arc structure is 15-25 °, which can be specifically adjusted according to the diameter of the cold roller 1. Because a larger number of ion sources are arranged, and the two ion source components 2 are distributed in an arc-shaped structure, the magnetic fields of the two ion source components 2 are consistent with the distance between the cold rollers 1, the cleaning effective area of the ion sources can be increased, and the cleaning capability is improved.

Specifically, the ion source assembly 2 includes a support 2-1, a magnet 2-2 disposed in the support 2-1, a gas channel 2-1a disposed in the support 2-1, a first magnetic conductive plate 2-3 connected to a first magnetic pole of the magnet 2-2, and a second magnetic conductive plate 2-4 connected to a second magnetic pole of the magnet 2-2, wherein the first magnetic conductive plate 2-3 and the second magnetic conductive plate 2-4 are disposed opposite to each other to form a plasma region at a gas outlet of the gas channel 2-1a, and the first magnetic pole is an N-pole and the second magnetic pole is an S-pole.

The first magnetic conduction plate 2-3 and the second magnetic conduction plate 2-4 are arranged on one side of the support body 2-1 facing the cold roller 1, in order to facilitate the connection of the second magnetic conduction plate 2-4 and the second magnetic pole of the magnet 2-2, a third magnetic conduction plate 2-5 connected to the second magnetic pole of the magnet 2-2 and a fourth magnetic conduction plate 2-6 connected with the second magnetic conduction plate 2-4 and the third magnetic conduction plate 2-5 are also arranged, and the third magnetic conduction plate 2-5 is arranged on one side of the support body 2-1 facing away from the cold roller 1.

In order to further optimize the implementation effect of the present utility model, the ion source assembly 2 further comprises a first grid 2-7 and a second grid 2-8 which are installed between the gas outlet of the gas channel 2-1a and the cold roller 1 and are arranged at intervals, wherein the first grid 2-7 is connected with the positive potential of the first power supply, is a screen grid, has the function of electrostatic shielding, prevents capacitive coupling between the grid electrodes and can accelerate ions. The second grid 2-8 is connected with the negative potential of the second power supply and is an accelerating grid for focusing ions and accelerating in the radial direction.

The first grid 2-7 and the second grid 2-8 are made of molybdenum, the molybdenum material has high thermal expansion coefficient, and the convex or concave grid is easy to manufacture and is easy to clean and use repeatedly. The thickness of the first grid 2-7 and the second grid 2-8 is 0.8 mm-1.5 mm, the aperture is 5 mm-8 mm, and the interval between the first grid 2-7 and the second grid 2-8 is 3-5 mm.

The first grid mesh 2-7 and the second grid mesh 2-8 are arranged in an arc shape, and the central angle of the arc is 18-22 degrees, so that the first grid mesh and the second grid mesh can play a role in divergence. Wherein, the first grid mesh 2-7 is fixed on the second magnetic conduction plate 2-4 through the ceramic 2-9, and the ceramic 2-9 plays an insulating role.

For cooling the ion source structure, the ion source assembly 2 further comprises a cooling water pipe 2-10 arranged in the support body 2-1, wherein the cooling water pipe 2-10 is arranged adjacent to the gas channel 2-1a, and a cooling water channel is arranged inside the cooling water pipe for introducing cooling water.

In the specific implementation, the cold roller 1 with the diameter of 1390mm is adopted, and the conventional ion source can meet the conventional coating performance requirements, such as 3A film, oxide coating, indium tin coating and other metal materials on the surface of the composite material; however, in the field of new lithium battery energy, the adhesion requirement on copper is higher, so that a novel ion source is needed to meet the performance requirement.

The ion source cleaning mechanism is fixed right above the cold roller 1, and the grid mesh and the second magnetic conduction plate 2-4 are blocked by insulating ceramics 2-9; according to the actual cleaning effect, the distance between the ion source grid mesh and the cold roller 1 is kept at 60+/-20 mm, the dyne value of the surface of the composite material can reach 38 after cleaning, the conventional ion source can only reach 32, and the dyne value after cleaning is improved; the corresponding highest operation speed can be improved by 20%, and the operation efficiency is improved while the performance is ensured.

In conclusion, the ion source cleaning mechanism can improve the cleaning capability and range of the ion source and the adhesive force of the magnetron sputtering coating, thereby improving the quality of the composite copper foil product.

The above examples are provided for illustrating the technical concept and features of the present utility model and are intended to enable those skilled in the art to understand the contents of the present utility model and to implement the same, and are not intended to limit the scope of the present utility model. All equivalent changes or modifications made according to the spirit of the present utility model should be included in the scope of the present utility model.

Claims

1. The ion source cleaning mechanism for magnetron winding coating is used for a magnetron sputtering winding coating machine, and the magnetron sputtering winding coating machine comprises a cold roller and the ion source cleaning mechanism arranged on the radial outer side of the cold roller, and is characterized in that: the ion source cleaning mechanism comprises a plurality of ion source components which are circumferentially arranged along the cold roller, and the plurality of ion source components are distributed in an arc-shaped structure matched with the cold roller.

2. The ion source cleaning mechanism for magnetically controlled winding plating film according to claim 1, wherein: the central angle of the arc-shaped structure of the plurality of ion source components is 15-25 degrees.

3. The ion source cleaning mechanism for magnetically controlled winding plating film according to claim 1, wherein: the ion source assembly comprises a support body, a magnet arranged in the support body, a gas channel arranged in the support body, a first magnetic conduction plate connected with a first magnetic pole of the magnet and a second magnetic conduction plate connected with a second magnetic pole of the magnet, wherein the first magnetic conduction plate and the second magnetic conduction plate are oppositely arranged to form a plasma region at a gas outlet of the gas channel.

4. The ion source cleaning mechanism for magnetically controlled winding plating film according to claim 3, wherein: the ion source assembly further includes a third magnetic permeable plate coupled to the second pole of the magnet, and a fourth magnetic permeable plate coupled to the second magnetic permeable plate and the third magnetic permeable plate.

5. The ion source cleaning mechanism for magnetically controlled winding plating film according to claim 3, wherein: the ion source assembly further comprises a first grid and a second grid which are arranged between the air outlet of the air channel and the cold roller at intervals, wherein the first grid is connected with the positive potential of the first power supply, and the second grid is connected with the negative potential of the second power supply.

6. The ion source cleaning mechanism for magnetically controlled winding plating film according to claim 5, wherein: the first grid mesh and the second grid mesh are arranged in an arc shape, and the central angle of the arc is 18-22 degrees.

7. The ion source cleaning mechanism for magnetically controlled winding plating film according to claim 6, wherein: the thickness of the first grid mesh and the second grid mesh is 0.8 mm-1.5 mm, and the aperture is 5 mm-8 mm.

8. The ion source cleaning mechanism for magnetically controlled winding plating film according to claim 6, wherein: the distance between the first grid mesh and the second grid mesh is 3-5 mm.

9. The ion source cleaning mechanism for magnetically controlled winding plating film according to claim 6, wherein: the first grid mesh is fixed on the second magnetic conduction plate through ceramics.

10. The ion source cleaning mechanism for magnetically controlled winding plating film according to claim 3, wherein: the ion source assembly further includes a cooling water tube disposed within the support body.