CN219514059U

CN219514059U - PIN diode drive control circuit

Info

Publication number: CN219514059U
Application number: CN202320675738.2U
Authority: CN
Inventors: 查加林; 孙小美; 雷振德; 翁阿强
Original assignee: Shaanxi Fenghuo Electronics Co Ltd
Current assignee: Shaanxi Fenghuo Electronics Co Ltd
Priority date: 2023-03-30
Filing date: 2023-03-30
Publication date: 2023-08-11
Anticipated expiration: 2033-03-30

Abstract

The utility model discloses a PIN diode driving control circuit, which comprises a control state conversion unit and a high-low voltage switching unit which are connected, wherein the control state conversion unit comprises an operational amplifier, a switching diode, a resistor and a capacitor which are connected, the high-low voltage switching unit comprises a field effect transistor, a voltage stabilizing diode, a resistor and a capacitor which are connected, the control state conversion unit can convert and output an input control level into a positive control level and a negative control level, and the positive control level and the negative control level drive the high-low voltage switching unit to switch the high voltage level and the low voltage level of the PIN diode, so that the on and off control of the PIN diode is realized. The design requirements of the PIN diode on the driving circuit when the PIN diode is used as a high-power or high-linearity radio frequency switch are met, and the PIN diode has the characteristics of high switching speed, strong forward bias carrying capacity, high reverse bias bearing voltage and circuit protection.

Description

PIN diode drive control circuit

Technical Field

The utility model relates to the technical field of PIN diode drive control, in particular to a PIN diode drive control circuit.

Background

The radio frequency switch is an important component of a microwave control circuit and is widely applied to radio frequency signal processing systems such as communication, radar and the like. Because the PIN diode can be used as a variable impedance element, it is often used in circuits such as radio frequency switches, phase shifting, modulation, clipping, and the like.

A common diode consists of a PN junction. A low-doped intrinsic semiconductor layer is added between the P and N semiconductor materials, and the diode with the P-I-N structure is a PIN diode. The PIN diode has wide application from low frequency to high frequency due to the existence of the intrinsic layer, and is mainly used in the field of radio frequency control. The radio frequency switch utilizes the impedance characteristic that the PIN tube is approximately conducted or disconnected under direct current forward bias and reverse bias to realize the control function of the radio frequency signal channel. Since the total charge of the PIN diode I layer is mainly determined by the bias current and is substantially unaffected by the instantaneous microwave current, the PIN diode only approximately exhibits a linear resistance for radio frequency signals. The equivalent resistance is determined by the main direct current bias, and the impedance is small in the forward bias and close to the short circuit; the impedance is large in reverse bias and is close to open circuit. In practical application, when a radio frequency signal passes through the PIN diode, particularly a high-power signal, in a forward conduction state of the PIN tube, the conductivity of the I layer is caused to shake, in a reverse bias state, the reverse bias junction capacitance of the PIN tube is caused to shake, and the conductivity of the I layer and the shake of the reverse bias junction capacitance both cause nonlinear distortion of the radio frequency signal. In order to reduce nonlinear distortion of the PIN diode to the maximum extent, the PIN diode, a proper switch structure and the like with indexes such as power capacity, linearity and the like meeting requirements are selected, and the PIN diode driving control circuit also has the characteristics that large current carrying capacity is required for forward bias, high voltage is required for reverse bias and the like.

Disclosure of Invention

In order to solve the problems in the prior art, the utility model provides a PIN diode driving control circuit, which solves the design requirements on a driving circuit when the PIN diode is used as a high-power or high-linearity radio frequency switch and has the characteristics of high switching speed, strong forward bias carrying capacity, high reverse bias bearing voltage and circuit protection.

In order to achieve the above purpose, the technical scheme adopted by the utility model is as follows: the high-low voltage switching unit comprises a field effect transistor, a voltage stabilizing diode, a resistor and a capacitor which are connected, the control state switching unit can convert and output an input control level into a positive control level and a negative control level, the positive control level and the negative control level drive the high-low voltage switching unit to switch the high voltage level and the low voltage level of the PIN diode, and the on and off control of the PIN diode is realized.

Further, the control state conversion unit includes an operational amplifier N1A and an operational amplifier N1B, the equidirectional input ends of the operational amplifier N1A and the operational amplifier N1B are connected with a control level of the microprocessor, a power level is connected with a reference level of the voltage division generating comparator of the operational amplifier N1A and the operational amplifier N1B through a resistor R3 and a resistor R4, the operational amplifier N1A is connected with a positive power supply and a negative power supply, and positive and negative control levels of the operational amplifier N1A and the operational amplifier N1B are respectively output to the high and low voltage switching unit.

Further, the control level of the microprocessor is output to the same-directional input ends of the operational amplifier N1A and the operational amplifier N1B through a resistor R5 and a resistor R10, and the positive and negative control levels of the operational amplifier N1A and the operational amplifier N1B are output to the high and low voltage switching unit through a resistor R6 and a resistor R11, respectively.

Further, the resistor R10 is connected in parallel with a switching diode V5, the unidirectional input ends of the operational amplifier N1A and the operational amplifier N1B are connected with a filter capacitor C4 to ground, the reference level is connected with a filter capacitor C3, the positive power supply is connected with a filter capacitor C1, and the negative power supply is connected with a filter capacitor C5 and a filter capacitor C6.

Further, the control level is a control low voltage level 0/+3.3v, the positive and negative control levels are-3.3v/+9.0v, the positive power supply is +9.0v, the negative power supply is-3.3v, the power supply level is +3.3v, and the resistance values of the resistor R3 and the resistor R4 are the same.

Further, the high-low voltage switching unit comprises a field effect tube V1, a field effect tube V2 and a field effect tube V4, the field effect tube V2 and the field effect tube V4 are connected with the output of the control state switching unit, the source electrodes of the field effect tube V2 and the field effect tube V4 are connected with a negative power supply, the drain electrode of the field effect tube V2 is connected with the grid electrode of the field effect tube V1 and is connected with a high-voltage power supply, and the source electrodes of the field effect tube V1 and the drain electrodes of the field effect tube V4 are connected to a PIN diode after being output.

Further, the drain electrode of the field effect transistor V2 is connected to the cathode of the zener diode V3, and the source electrode of the field effect transistor V1 and the anode electrode of the zener diode V3 are connected to the drain electrode of the field effect transistor V4.

Further, the drain electrode of the field effect transistor V2 is connected to a resistor R1 and a resistor R2 connected in series, and the resistor R2 is connected to a high voltage power supply.

Further, the source of the fet V1 and the anode of the zener diode V3 are connected to a resistor R8, and the resistor R8 is connected to the drain of the fet V4.

Further, the drain electrode of the field effect transistor V4 is connected with the resistor R8 through a resistor R7, a resistor R9 and a capacitor C2, and the resistor R7 and the resistor R9 are connected in parallel.

Compared with the prior art, the utility model comprises a control state switching unit and a high-low voltage switching unit. The control state conversion unit realizes the conversion from the microprocessor output control low voltage level to positive and negative control level, the positive and negative control level is used for driving the high and low voltage switching unit of the later stage, the high and low voltage switching unit realizes the high voltage level and low voltage level switching function of the PIN diode driving circuit, and the switching is directly controlled by the positive and negative control level. The switching control of high and low voltage can be realized through the common control level, the practicability of the circuit is greatly improved, and the circuit scheme of generating the positive and negative control levels through the comparison mode of the common control level and the reference voltage value can realize the common control level adjustable function and can also enhance the anti-interference capability of the driving control circuit. The utility model solves the design requirement on the driving circuit when the PIN diode is used as a high-power or high-linearity radio frequency switch, and the circuit has the characteristics of high switching speed, strong forward bias carrying capacity, high reverse bias bearing voltage, strong protection circuit and anti-interference capacity and the like.

Drawings

FIG. 1 is a control schematic of the present utility model;

fig. 2 is a schematic circuit diagram of the present utility model.

Detailed Description

The present utility model will be further illustrated by the following description of the drawings and specific embodiments, wherein it is apparent that the embodiments described are some, but not all, of the embodiments of the utility model. All other embodiments, which can be made by those skilled in the art based on the embodiments of the utility model without making any inventive effort, are intended to be within the scope of the utility model.

The embodiment of the utility model discloses a PIN diode driving control circuit, which meets the requirements that a PIN diode is adopted as a radio frequency signal switch in a high-power radio frequency signal control circuit, and the PIN diode is matched with an external driving control circuit to realize the function of switch control, so that the circuit function can be effectively realized, the requirement of the PIN diode on a driving circuit when the PIN diode is used as a high-power or high-linearity radio frequency switch is met, and the PIN diode driving control circuit has the characteristics of high switching speed, strong forward bias carrying capacity, high reverse bias bearing voltage, protection circuit and the like.

Referring to fig. 1 specifically, the utility model includes a control state conversion unit and a high-low voltage switching unit, the control state conversion unit includes an operational amplifier, a switching diode, a resistor and a capacitor, the high-low voltage switching unit includes a field effect transistor, a voltage stabilizing diode, a resistor and a capacitor, the control state conversion unit can convert the input control level into positive and negative control level, the positive and negative control level drives the high-low voltage switching unit to switch the high voltage level and the low voltage level of the PIN diode, and the on and off control of the PIN diode is realized.

The control state switching circuit realizes the switching from the microprocessor output control low voltage level (eg: 0/+3.3V) to positive and negative control level, and the positive and negative control level is used for driving the high and low voltage switching units of the later stage. The high-low voltage switching unit realizes the high-voltage level and low-voltage level switching function of the PIN diode driving circuit and is directly controlled by positive and negative control levels. The control level (eg: 0/+3.3v) sent from the microprocessor cannot directly drive and control the high-low voltage switching unit, because the difference between the high voltage and the low voltage of the control level is insufficient, it is difficult to realize effective control of the switching state of the later stage fet. The complexity of the radio frequency switch circuit and the conduction voltage value of the field effect transistor VGS are comprehensively considered, and positive and negative control levels adopt a design scheme of-3.3V/+9.0V. The control state switching unit is mainly composed of an operational amplifier, a switching diode, a resistor and a capacitor. The core conversion device of the control state conversion unit is an operational amplifier working in a comparator state, and positive and negative control levels are output through comparison with a set reference voltage value. The main devices of the control state switching circuit comprise a field effect transistor, a voltage stabilizing diode, a resistor and a capacitor. The positive and negative control level (-3.3V/+9.0V) output by the control state conversion unit is directly output to the grid electrode of the high and low voltage control device field effect transistor of the high and low voltage switching unit, and the control grid voltage of the field effect transistor is provided.

Referring to fig. 2 specifically, the control state conversion unit includes an operational amplifier N1A and an operational amplifier N1B, the control level of the microprocessor is connected to the same directional input terminals of the operational amplifier N1A and the operational amplifier N1B, the power level is connected to the reference level of the voltage dividing generating comparator of the operational amplifier N1A and the operational amplifier N1B through a resistor R3 and a resistor R4, the operational amplifier N1A is connected to the positive power supply and the negative power supply, and the positive and negative control levels of the operational amplifier N1A and the operational amplifier N1B are respectively output to the high and low voltage switching unit.

More specifically, the control level of the microprocessor is output to the same-directional input terminals of the operational amplifier N1A and the operational amplifier N1B through the resistor R5 and the resistor R10, respectively, and the positive and negative control levels of the operational amplifier N1A and the operational amplifier N1B are output to the high and low voltage switching unit through the resistor R6 and the resistor R11, respectively. The resistor R10 is connected with a switching diode V5 in parallel, the homodromous input ends of the operational amplifier N1A and the operational amplifier N1B are connected with a grounded filter capacitor C4, a reference level is connected with a filter capacitor C3, a positive power supply is connected with the filter capacitor C1, and a negative power supply is connected with the filter capacitor C5 and the filter capacitor C6. The switching diode V5 is a delay function to ensure that the comparison result of the operational amplifier N1B is faster than the comparison result of N1A.

In this embodiment, the control level is a control low voltage level 0/+3.3v, the positive and negative control levels are-3.3v/+9.0v, the positive power supply is +9.0v, the negative power supply is-3.3v, the power supply level is +3.3v, and the resistances of the resistor R3 and the resistor R4 are the same. The resistor R3 and the resistor R4 have the same value in the present embodiment because the control level is +3.3v/0, and the reference comparison voltage is set to 1/2 of the control level, so that the ideal anti-interference characteristic can be obtained. If the control level is different, the resistance values of the resistor R3 and the resistor R4 can be modified to set the reference comparison voltage to the 1/2 value of the control level. In other embodiments, the control level, the positive and negative control level, the power supply, etc. may be selected according to specific use conditions, and it is preferable to obtain a desirable anti-interference characteristic.

Specifically, the high-low voltage switching unit comprises a field effect tube V1, a field effect tube V2 and a field effect tube V4, wherein the field effect tube V2 and the field effect tube V4 are connected with the output of the control state switching unit, the sources of the field effect tube V2 and the field effect tube V4 are connected with a negative power supply, the drain electrode of the field effect tube V2 is connected with the grid electrode of the field effect tube V1 and is connected with a high-voltage power supply, and the source electrode of the field effect tube V1 and the drain electrode of the field effect tube V4 are connected to a PIN diode after being output.

More specifically, the drain of the field effect transistor V2 is connected to the cathode of the zener diode V3, and the source of the field effect transistor V1 and the anode of the zener diode V3 are connected to the drain of the field effect transistor V4. The zener diode V3 is a zener diode with a voltage stabilizing value of +12v, and is used for preventing the fet VGS from being damaged due to the fact that the fet VGS is larger than a limit value.

More specifically, the drain of the field effect transistor V2 is connected with a resistor R1 and a resistor R2 connected in series, and the resistor R2 is connected to a high-voltage power supply. The series connection of the resistor R1 and the resistor R2 has the function of dividing voltage, so that the resistor is prevented from being damaged due to the fact that the voltage is higher than the rated voltage value of the resistor.

More specifically, the source of the field effect transistor V1 and the anode of the zener diode V3 are connected to the resistor R8, and the resistor R8 is connected to the drain of the field effect transistor V4. The drain electrode of the field effect tube V4 is connected with a resistor R7, a resistor R9 and a capacitor C2, and the resistor R7 and the resistor R9 are connected in parallel. The parallel connection of the resistor R7 and the resistor R9 has the function of current shunt, so that the circuit has larger current output capacity and current carrying capacity of more than 1A.

The control state conversion unit of the embodiment of the utility model works according to the following principle:

the control level sent by the microprocessor is connected to the resistor R5, and the control level is respectively output to the same-directional input ends of the operational amplifier N1A and the operational amplifier N1B through the resistor R5 and the resistor R10. The switching diode V5 is connected in parallel with the resistor R10, and the capacitor C4 is a filter capacitor to ground connected to the unidirectional input terminal of the operational amplifier N1B. The power level +3.3V is divided by the resistor R3 and the resistor R4 to generate the reference level of the comparator, and the reference level is connected with the filter capacitor C3. The positive and negative power supply voltages of the operational amplifier N1 are respectively-3.3V/+9.0V and are connected with a filter capacitor C1, a filter capacitor C5 and a filter capacitor C6, the control level is processed by the operational amplifier to generate positive and negative control levels (-3.3V/+9.0V), and then the positive and negative control levels are respectively output to the high and low voltage switching unit through a resistor R6 and a resistor R11. The switching diode V5 is a delay function to ensure that the comparison result of the operational amplifier N1B is faster than the comparison result of N1A. The resistor R3 and the resistor R4 have the same value in the present embodiment because the control level is +3.3v/0, and the reference comparison voltage is set to 1/2 of the control level, so that a more ideal anti-interference characteristic can be obtained. If the control level is at its different values, the resistance values of resistors R3 and R4 may be modified to set the reference comparison voltage to the 1/2 value of the control level.

positive and negative control levels output by the control state conversion unit are respectively sent to grids of a field effect tube V2 and a field effect tube V4, sources of the field effect tube V2 and the field effect tube V4 are simultaneously connected to a negative power supply-3.3V, drains of the field effect tube V2 are respectively connected to a resistor R1, the grid of the field effect tube V1 and a cathode of a voltage stabilizing diode V3, the resistor R2 is connected with a resistor R1 in series, the drains of the resistor R2 and the field effect tube V1 are connected to a high-voltage power supply +200V (which can be raised to more than +400V), a source of the field effect tube V1, an anode of the voltage stabilizing diode V3 and a resistor R8 are connected together, a resistor R8 is connected to a drain of the field effect tube V4, and then a control signal is generated and output to a PIN diode driving control signal through a resistor R7, a resistor R9 and a capacitor C2. The series connection of the resistor R1 and the resistor R2 has the function of dividing voltage, so that the resistor is prevented from being damaged due to the fact that the voltage is higher than the rated voltage value of the resistor. The zener diode V3 is a zener diode with a voltage stabilizing value of +12v, and is used for preventing the fet VGS from being damaged due to the fact that the fet VGS is larger than a limit value. The parallel connection of the resistor R7 and the resistor R9 has the function of current shunt, so that the circuit has larger current output capacity and current carrying capacity of more than 1A.

The utility model solves the design problem of the PIN diode driving control circuit when the PIN diode is used for the radio frequency switch with high power or high linearity requirement. The drive control circuit includes: the switch has the characteristics of high switch speed, strong carrying capacity, high bearing voltage, strong anti-interference capacity, protection circuit and the like. The drive control circuit has the characteristics of high switching speed of high voltage and low voltage, high load capacity of conducting low voltage, high voltage value of cut-off high voltage and the like by optimizing relevant parameters of devices such as an operational amplifier, a field effect transistor, a resistor, a capacitor and the like. The control state conversion unit and the high-low voltage switching unit are both provided with necessary protection circuits, so that an effective protection function can be implemented, and the condition that the drive control circuit is damaged due to abnormal control state can be avoided to the greatest extent.

Finally, it should be noted that: the above embodiments are only for illustrating the technical solution of the present utility model, and not for limiting the same; although the utility model has been described in detail with reference to the foregoing embodiments, it will be understood by those of ordinary skill in the art that: the technical scheme described in the foregoing embodiments can be modified or some or all of the technical features thereof can be replaced with equivalents; such modifications and substitutions do not depart from the spirit of the technical solutions according to the embodiments of the present utility model.

Claims

1. The PIN diode driving control circuit is characterized by comprising a control state conversion unit and a high-low voltage switching unit, wherein the control state conversion unit comprises an operational amplifier, a switching diode, a resistor and a capacitor, the operational amplifier, the switching diode, the resistor and the capacitor are connected, the high-low voltage switching unit comprises a field effect transistor, a voltage stabilizing diode, the resistor and the capacitor, the control state conversion unit can convert and output an input control level into a positive control level and a negative control level, and the positive control level and the negative control level drive the high-low voltage switching unit to switch the high voltage level and the low voltage level of the PIN diode, so that the on and off control of the PIN diode is realized.

2. The PIN diode driving control circuit according to claim 1, wherein the control state switching unit includes an operational amplifier (N1A) and an operational amplifier (N1B), the control level of the microprocessor is connected to the same directional input terminals of the operational amplifier (N1A) and the operational amplifier (N1B), the power supply level is connected to the reference level of the voltage dividing generating comparator of the operational amplifier (N1A) and the operational amplifier (N1B) through a resistor (R3) and a resistor (R4), the operational amplifier (N1A) is connected to a positive power supply and a negative power supply, and the positive and negative control levels of the operational amplifier (N1A) and the operational amplifier (N1B) are respectively output to the high and low voltage switching unit.

3. A PIN diode driving control circuit according to claim 2, wherein the control level of the microprocessor is output to the same-directional input terminals of the operational amplifier (N1A) and the operational amplifier (N1B) through a resistor (R5) and a resistor (R10), respectively, and the positive and negative control levels of the operational amplifier (N1A) and the operational amplifier (N1B) are output to the high and low voltage switching unit through a resistor (R6) and a resistor (R11), respectively.

4. A PIN diode driving control circuit according to claim 3, characterized in that the resistor (R10) is connected in parallel with a switching diode (V5), the co-directional input terminals of the operational amplifier (N1A) and the operational amplifier (N1B) are connected with a filter capacitor (C4) to ground, the reference level is connected with a filter capacitor (C3), the positive power supply is connected with a filter capacitor (C1), and the negative power supply is connected with a filter capacitor (C5) and a filter capacitor (C6).

5. A PIN diode driving control circuit according to claim 2, 3 or 4, wherein the control level is a control low voltage level 0/+3.3v, the positive and negative control levels are-3.3V/+9.0V, the positive power supply is +9.0v, the negative power supply is-3.3V, the power supply level is +3.3v, and the resistance values of the resistor (R3) and the resistor (R4) are the same.

6. The PIN diode driving control circuit according to claim 1, wherein the high-low voltage switching unit comprises a field effect transistor (V1), a field effect transistor (V2) and a field effect transistor (V4), the field effect transistor (V2) and the field effect transistor (V4) are connected with the output of the control state switching unit, the sources of the field effect transistor (V2) and the field effect transistor (V4) are connected with a negative power supply, the drain electrode of the field effect transistor (V2) is connected with the gate electrode of the field effect transistor (V1) and is connected with a high-voltage power supply, and the sources of the field effect transistor (V1) and the drain electrode of the field effect transistor (V4) are connected to the PIN diode after being output.

7. The PIN diode driving control circuit according to claim 6, wherein a drain electrode of the field effect transistor (V2) is connected to a cathode of a zener diode (V3), and a source electrode of the field effect transistor (V1) and an anode electrode of the zener diode (V3) are connected to a drain electrode of the field effect transistor (V4).

8. The PIN diode driving control circuit according to claim 7, wherein a resistor (R1) and a resistor (R2) connected in series are connected to the drain of the field effect transistor (V2), and the resistor (R2) is connected to a high voltage power supply.

9. A PIN diode driving control circuit according to claim 7 or 8, characterized in that the source of the field effect transistor (V1) and the anode of the zener diode (V3) are connected to a resistor (R8), the resistor (R8) being connected to the drain of the field effect transistor (V4).

10. A PIN diode driving control circuit according to claim 9, characterized in that the drain of the field effect transistor (V4) and the resistor (R8) are connected to a resistor (R7), a resistor (R9) and a capacitor (C2), the resistor (R7) and the resistor (R9) being connected in parallel.