CN211239696U - Wide-range voltage linear conversion circuit - Google Patents
Wide-range voltage linear conversion circuit Download PDFInfo
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- CN211239696U CN211239696U CN201922474173.8U CN201922474173U CN211239696U CN 211239696 U CN211239696 U CN 211239696U CN 201922474173 U CN201922474173 U CN 201922474173U CN 211239696 U CN211239696 U CN 211239696U
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Abstract
The utility model discloses a wide-range voltage linear conversion circuit, which comprises a high-voltage division module, a source electrode following module and a power supply module, wherein the power supply module is used for supplying power for the high-voltage division module and the source electrode following module; the high-voltage division module is connected to a first voltage output end of the power supply module and is used for dividing a high-voltage input signal to form a divided voltage signal; the source electrode following module is connected to a second voltage output end of the power supply module and the high-voltage division module, and the source electrode following module is used for performing linear conversion on the voltage division signal to form a low-voltage output signal. The utility model discloses a wide range voltage linear conversion circuit can be the low-voltage signal with the linear conversion of wide range's high-pressure output signal under the prerequisite that does not influence output current and voltage output performance, and this circuit includes less device, saves chip area, and when supply voltage surpassed working range, can not cause the damage to inside device.
Description
Technical Field
The utility model belongs to the technical field of voltage conversion circuit, concretely relates to linear converting circuit of wide range voltage.
Background
The intelligent power driving chip is mostly a wide-range power supply chip, the power supply voltage is from several volts to nearly hundred volts, and when the chip inputs logic '1', the intelligent power driving chip is started to supply current to a load; when the chip inputs logic '0', the intelligent power driving chip is switched off and does not provide current for the load. Besides the above functions, the chip also needs to have the functions of over-temperature protection, overvoltage protection, overcurrent protection, load detection and the like. When the chip inputs logic '1', the intelligent power driving chip is switched off when the chip has over-temperature, over-voltage, over-current, load short circuit and open circuit. When the chip is designed, the functions of over-temperature, over-voltage, over-current, load detection and the like are mostly realized in a low-voltage domain. Referring to fig. 1, fig. 1 is a structural diagram of a voltage converting circuit in the prior art. As shown in the figure, when the output needs to be tracked during the load detection function, the auxiliary power tube N7 is adopted to mirror the main power tube N8 (m1/m 2)<1, namely the number of MOS (metal oxide semiconductor) transistors in the auxiliary power tube N7 is less than that in the main power tube N8), the auxiliary power tube N7 is connected with a resistor R in series, and V isinIs an input voltage of a voltage conversion circuit, VoutIs an input voltage VinThe sampled voltage of (a). When the supply voltage VhighIn a wide range, since the output current of N7 is small, V can be adjusted by selecting a proper resistanceoutThe sample is a low voltage.
In practical application, the voltage V is sampledoutAnd an input voltage VinInfluenced by the matching degree of the auxiliary power tube N7 and the main power tube N8 and the difference of VDS voltages (source-drain voltages) of the auxiliary power tube N7 and the main power tube N8Linear sampling is more difficult to achieve and the linearity is worse as the output current increases.
SUMMERY OF THE UTILITY MODEL
In order to solve the above-mentioned problem that exists among the prior art, the utility model provides a wide range voltage linear conversion circuit. The to-be-solved technical problem of the utility model is realized through following technical scheme:
the utility model provides a wide-range voltage linear conversion circuit, which comprises a high-voltage division module, a source electrode following module and a power supply module, wherein,
the power supply module is used for supplying power to the high-voltage division module and the source electrode following module;
the high-voltage division module is connected to a first voltage output end of the power supply module and is used for dividing a high-voltage input signal to form a divided voltage signal;
the source electrode following module is connected to a second voltage output end of the power supply module and the high-voltage dividing module, and the source electrode following module is used for performing linear conversion on the divided voltage signal to form a low-voltage output signal.
In an embodiment of the invention, the supply voltage V of the first voltage output of the supply modulehighA supply voltage V greater than the second voltage output of the power supply modulelow。
In an embodiment of the present invention, the supply voltage range of the first voltage output terminal of the power supply module is 4V-100V.
In an embodiment of the invention, the supply voltage range of the second voltage output of the power supply module is 3V-5.5V.
In one embodiment of the present invention, the high voltage divider module comprises a first NMOS transistor, a second NMOS transistor, and a third NMOS transistor, wherein,
the drain electrode of the first NMOS tube is connected to the first voltage output end of the power supply module, the grid electrode of the first NMOS tube is connected to the NMOS tube starting voltage input end, and the source electrode of the first NMOS tube is connected to the drain electrode of the second NMOS tube;
the grid electrode and the source electrode of the second NMOS tube are both connected to the drain electrode of the third NMOS tube, and the grid electrode and the source electrode of the third NMOS tube are both connected to a ground terminal;
the input end of the high-voltage input signal is connected to a node between the source electrode of the first NMOS tube and the drain electrode of the second NMOS tube;
the source electrode following module is connected to a node between the source electrode of the second NMOS tube and the drain electrode of the third NMOS tube.
In one embodiment of the present invention, the source follower module includes a fourth NMOS transistor and a first resistor, wherein,
the drain electrode of the fourth NMOS tube is connected to the second voltage output end of the power supply module, the grid electrode of the fourth NMOS tube is connected to a node between the source electrode of the second NMOS tube and the drain electrode of the third NMOS tube, the source electrode of the fourth NMOS tube is connected to the first end of the first resistor, and the second end of the first resistor is connected to the ground end;
and a node between the source electrode of the fourth NMOS tube and the first resistor is used as a low-voltage output signal output end and is connected to a post-stage circuit.
In one embodiment of the present invention, the high voltage divider module includes a fifth NMOS transistor, a second resistor, and a third resistor, wherein,
the drain electrode of the fifth NMOS tube is connected to the first voltage output end of the power supply module, and the grid electrode of the fifth NMOS tube is connected to the NMOS tube starting voltage input end;
the second resistor and the third resistor are connected in series between the source electrode of the fifth NMOS transistor and the ground terminal;
the input end of the high-voltage input signal is connected to a node between the source electrode of the fifth NMOS tube and the second resistor;
the source follower module is connected to a node between the second resistance and the third resistance.
In one embodiment of the present invention, the source follower module includes a sixth NMOS transistor and a fourth resistor, wherein,
the drain of the sixth NMOS transistor is connected to the second voltage output end of the power supply module, the gate of the sixth NMOS transistor is connected to a node between the second resistor and the third resistor, the source of the sixth NMOS transistor is connected to the first end of the fourth resistor, and the second end of the fourth resistor is connected to the ground terminal;
and a node between the source electrode of the sixth NMOS tube and the fourth resistor is used as a low-voltage output signal output end and is connected to a post-stage circuit.
Compared with the prior art, the beneficial effects of the utility model reside in that:
1. the utility model discloses a wide range voltage linear conversion circuit includes high-pressure partial pressure module, source electrode follower module and power module, can be linear conversion high-pressure output signal into low pressure signal under the prerequisite that does not influence output current and voltage for the device matching nature does not constitute the essential factor that influences output linearity.
2. The wide-range voltage linear conversion circuit comprises fewer devices, so that the chip area is saved, the manufacturing cost is saved, and the wide-range voltage linear conversion circuit can be applied to the fields of aviation, navigation, industrial control, consumer electronics and the like.
The present invention will be described in further detail with reference to the accompanying drawings and examples.
Drawings
FIG. 1 is a block diagram of a voltage conversion circuit of the prior art;
fig. 2 is a block diagram of a wide-range voltage linear conversion circuit according to an embodiment of the present invention;
fig. 3 is a circuit diagram of a wide-range voltage linear conversion circuit according to an embodiment of the present invention;
fig. 4 is a circuit diagram of another wide-range voltage linear conversion circuit according to an embodiment of the present invention.
Detailed Description
To further illustrate the technical means and effects of the present invention adopted to achieve the objects of the present invention, the following description will be made in conjunction with the accompanying drawings and the detailed description of the embodiments for a wide-range voltage linear conversion circuit according to the present invention.
The foregoing and other technical matters, features and effects of the present invention will be apparent from the following detailed description of the embodiments, which is to be read in connection with the accompanying drawings. The technical means and effects of the present invention to achieve the predetermined objects can be more deeply and specifically understood through the description of the specific embodiments, however, the attached drawings are only for reference and description and are not intended to limit the technical solution of the present invention.
It is noted that, herein, relational terms such as first and second, and the like may be used solely to distinguish one entity or action from another entity or action without necessarily requiring or implying any actual such relationship or order between such entities or actions. Also, the terms "comprises," "comprising," or any other variation thereof, are intended to cover a non-exclusive inclusion, such that an article or device that comprises a list of elements does not include only those elements but may include other elements not expressly listed. Without further limitation, an element defined by the phrase "comprising an … …" does not exclude the presence of additional like elements in the article or device comprising the element.
Example one
The embodiment provides a wide-range voltage linear conversion circuit, which can solve the problem that the output voltage cannot be linearly sampled due to the problems of mismatch and the like in the prior art.
Referring to fig. 2, fig. 2 is a block diagram of a wide-range voltage linear conversion circuit according to an embodiment of the present invention. The wide-range voltage linear conversion circuit of the embodiment comprises a high-voltage division module 101, a source follower module 102 and a power supply module 103, wherein the power supply module 103 is used for supplying power to the high-voltage division module 101 and the source follower module 102; the high-voltage division module 101 is connected to a first voltage output end of the power supply module 103, and the high-voltage division module 101 is used for dividing a high-voltage input signal to form a divided voltage signal; the source follower module 102 is connected to a second voltage output end of the power supply module 103 and the high voltage dividing module 101, and the source follower module 102 is configured to perform linear conversion on the divided voltage signal to form a low voltage output signal. The wide-range voltage linear conversion circuit of the embodiment can convert a wide-range input signal into a low-voltage signal, and the voltage range of the input signal is higher than the voltage of the later stage.
Specifically, please refer to fig. 3, fig. 3 is a circuit diagram of a wide-range voltage linear converting circuit according to an embodiment of the present invention. The high voltage divider module 101 of the present embodiment includes a first NMOS transistor N1, a second NMOS transistor N2, and a third NMOS transistor N3, wherein a drain of the first NMOS transistor N1 is connected to a first voltage output terminal V of the power supply module 103highThe grid electrode of the first NMOS transistor N1 is connected to an NMOS transistor starting voltage input end Von, and the source electrode of the first NMOS transistor N1 is connected to the drain electrode of the second NMOS transistor N2; the grid electrode and the source electrode of the second NMOS transistor N2 are both connected to the drain electrode of the third NMOS transistor N3, and the grid electrode and the source electrode of the third NMOS transistor N3 are both connected to the ground terminal GND; high voltage input signal VinIs connected to a node between the source of the first NMOS transistor N1 and the drain of the second NMOS transistor N2; the source follower block 102 is connected to a node between the source of the second NMOS transistor N2 and the drain of the third NMOS transistor N3.
It should be noted that, the withstand voltages of VDS (source-drain) of the third NMOS transistor N3 and the second NMOS transistor N2 are both greater than the first voltage output terminal Vhigh。
In this embodiment, the first NMOS transistor N1 is used as a switch, and its gate is connected to the NMOS transistor turn-on voltage input terminal VonThe turn-on voltage is input, and may be derived from voltages generated by other circuits, and is not limited herein. And, the turn-on voltage is greater than the high-voltage input signal VinThe threshold of the first NMOS transistor N1 is raised. It should be noted that the first NMOS transistor N1 is always turned on during operation to ensure the high-voltage output signal V of the front-end circuitinThe voltage can be smoothly inputted into the wide-range voltage linear conversion circuit of the embodiment, and the withstand voltage of VDS (source-drain) of the first NMOS transistor N1 is larger than that of the first voltage output end Vhigh。
Further, the source follower module 102 of the present embodiment includes a fourth NMOS transistor N4 and a first resistor R1, wherein a drain of the fourth NMOS transistor N4 is connected to the second voltage output terminal V of the power supply module 103lowA gate of the fourth NMOS transistor N4 is connected to a node between the source of the second NMOS transistor N2 and the drain of the third NMOS transistor N3, a source of the fourth NMOS transistor N4 is connected to a first end of the first resistor R1, and a second end of the first resistor R1 is connected to a ground GND; a node between the source electrode of the fourth NMOS transistor N4 and the first resistor R1 is used as a low-voltage output signal output end VSAnd connected to the subsequent stage circuit.
Further, the supply voltage V of the first voltage output terminal of the supply module 103highIs greater than the supply voltage V of the second voltage output terminal of the power supply module 103low. Preferably, the power supply range of the first voltage output terminal of the power supply module 103 is 4V-100V, and the power supply range of the second voltage output terminal of the power supply module 103 is 3V-5.5V.
In this embodiment, the second NMOS transistor N2 and the third NMOS transistor N3 are both reverse blocking MOS transistors, which are only impedance representations, and thus can be embodied by resistors or other impedance forms. In this embodiment, the supply voltage V is selectedhighSetting the parameters of the second NMOS transistor N2 and the third NMOS transistor N3 to make the voltage V between the source of the second NMOS transistor N2 and the drain of the third NMOS transistor N3 be the highest voltage during normal operationa-Vth>Vlow-VSWherein V isthIs the threshold value of the fourth NMOS transistor N4, voltage VaThe expression of (a) is as follows:
further, the fourth NMOS transistor N4 is high VgdA withstand voltage NMOS tube, wherein VgdIs the voltage of the gate relative to the drain, V of the fourth NMOS transistor N4gdThe withstand voltage needs to be more than:
low voltage output signal transmissionThe output voltage of the output end Vs is the high-voltage input signal VinThe output voltage after voltage conversion, the voltage and the high voltage input signal VinIs in linear proportional relation and is positioned at the second voltage output end V of the power supply module 103lowAnd the range of the voltage regulator is also within the range of the power supply voltage of the rear-stage circuit, so that subsequent circuit devices cannot be damaged.
The wide-range voltage linear conversion circuit comprises a high-voltage division module, a source electrode following module and a power supply module, and can convert a high-voltage output signal into a low-voltage signal on the premise of not influencing output current and voltage output performance, so that device matching does not form a main factor influencing output linearity.
Example two
On the basis of the above embodiments, the present embodiment provides another wide-range voltage linear conversion circuit, and the main difference of the circuit of the present embodiment from the first embodiment is the structure of the high-voltage dividing module 101.
Specifically, the high voltage divider module 101 includes a fifth NMOS transistor N5, a second resistor R2, and a third resistor R3, wherein a drain of the fifth NMOS transistor N5 is connected to the first voltage output terminal V of the power supply module 103highThe grid electrode of a fifth NMOS tube N5 is connected to an NMOS tube starting voltage input end Von; the second resistor R2 and the third resistor R3 are connected in series between the source of the fifth NMOS transistor N5 and the ground GND; high voltage input signal VinIs connected to a node between the source of the fifth NMOS transistor N5 and the second resistor R2; the source follower module 102 is connected to a node between the second resistor R2 and the third resistor R3.
Further, V of the fifth NMOS transistor N5DSThe withstand voltage of the source/drain is larger than that of the first voltage output end Vhigh。
Further, the source follower module 102 includes a sixth NMOS transistor N6 and a fourth resistor R4, wherein a drain of the sixth NMOS transistor N6 is connected to the second voltage output terminal V of the power supply module 103lowA gate of the sixth NMOS transistor N6 is connected to a node between the second resistor R2 and the third resistor R3, a source of the sixth NMOS transistor N6 is connected to a first end of the first resistor R1, and a source of the first resistor R1The second end is connected to the ground end GND; the node between the source of the sixth NMOS transistor N6 and the first resistor R1 serves as a low voltage output signal Vs, and is connected to a subsequent circuit.
In this embodiment, the supply voltage V is selectedhighSetting the device parameters of the second resistor R2 and the third resistor R3 to make the voltage V between the second resistor R2 and the third resistor R3 be the highest voltage during normal operationa-Vth>Vlow-VSWherein V isthIs the threshold value of the sixth NMOS transistor N6, voltage VaThe expression of (a) is as follows:
further, the sixth NMOS transistor N6 is high VgdA withstand voltage NMOS tube, wherein VgdIs the voltage of the gate relative to the drain, V of the sixth NMOS transistor N6DSThe withstand voltage of the source/drain is larger than that of the first voltage output end VhighV of the sixth NMOS transistor N6gdThe withstand voltage needs to be more than:
the output voltage of the low-voltage output signal output end Vs is the high-voltage input signal VinThe output voltage after voltage conversion, the voltage and the high voltage input signal VinIs in linear proportional relation and is positioned at the second voltage output end V of the power supply module 103lowAnd the range of the voltage regulator is also within the range of the power supply voltage of the rear-stage circuit, so that subsequent circuit devices cannot be damaged.
In summary, the wide-range voltage linear conversion circuit of the embodiment includes the high-voltage dividing module, the source follower module and the power supply module, and can convert the high-voltage output signal into the low-voltage signal linearly without affecting the output current and voltage output performance, so that the device matching does not form a main factor affecting the output linearity. The wide-range voltage linear conversion circuit of the embodiment comprises fewer devices, so that the chip area is saved, the manufacturing cost is saved, and the wide-range voltage linear conversion circuit can be applied to the fields of aviation, navigation, industrial control, consumer electronics and the like. In addition, the wide-range voltage linear conversion circuit cannot damage internal devices when the power supply voltage exceeds the working range.
The foregoing is a more detailed description of the present invention, taken in conjunction with the specific preferred embodiments thereof, and it is not intended that the invention be limited to the specific embodiments shown and described. To the utility model belongs to the technical field of ordinary technical personnel, do not deviate from the utility model discloses under the prerequisite of design, can also make a plurality of simple deductions or replacement, all should regard as belonging to the utility model discloses a protection scope.
Claims (8)
1. A wide-range voltage linear conversion circuit is characterized by comprising a high-voltage division module (101), a source follower module (102) and a power supply module (103), wherein,
the power supply module (103) is used for supplying power to the high-voltage division module (101) and the source electrode following module (102);
the high-voltage division module (101) is connected to a first voltage output end of the power supply module (103), and the high-voltage division module (101) is used for dividing a high-voltage input signal to form a divided voltage signal;
the source electrode following module (102) is connected to a second voltage output end of the power supply module (103) and the high-voltage dividing module (101), and the source electrode following module (102) is used for linearly converting the divided voltage signal to form a low-voltage output signal.
2. The wide-range voltage linear conversion circuit according to claim 1, characterized in that the supply voltage V at the first voltage output of the supply module (103)highIs greater than the supply voltage V of the second voltage output of the supply module (103)low。
3. The wide-range voltage linear conversion circuit according to claim 2, characterized in that the supply voltage range of the first voltage output of the supply module (103) is 4V-100V.
4. The wide-range voltage linear conversion circuit according to claim 2, wherein the supply voltage range of the second voltage output of the supply module (103) is 3V-5.5V.
5. The wide-range voltage linear conversion circuit according to any one of claims 2 to 4, wherein the high voltage divider module (101) comprises a first NMOS transistor (N1), a second NMOS transistor (N2) and a third NMOS transistor (N3), wherein,
the drain electrode of the first NMOS tube (N1) is connected to a first voltage output end (V) of the power supply module (103)high) The grid electrode of the first NMOS tube (N1) is connected to an NMOS tube starting voltage input end (V)on) The source electrode of the first NMOS tube (N1) is connected to the drain electrode of the second NMOS tube (N2);
the grid electrode and the source electrode of the second NMOS tube (N2) are both connected to the drain electrode of the third NMOS tube (N3), and the grid electrode and the source electrode of the third NMOS tube (N3) are both connected to the ground terminal (GND);
the high voltage input signal (V)in) Is connected at a node between the source of the first NMOS transistor (N1) and the drain of the second NMOS transistor (N2);
the source follower module (102) is connected at a node between the source of the second NMOS transistor (N2) and the drain of the third NMOS transistor (N3).
6. The wide range voltage linear conversion circuit of claim 5, wherein the source follower module (102) comprises a fourth NMOS transistor (N4) and a first resistor (R1), wherein,
the drain electrode of the fourth NMOS tube (N4) is connected to the second voltage output end (V) of the power supply module (103)low) A gate of the fourth NMOS transistor (N4) is connected to a node between a source of the second NMOS transistor (N2) and a drain of the third NMOS transistor (N3), a source of the fourth NMOS transistor (N4) is connected to a first end of the first resistor (R1), a second end of the first resistor (R1) is connected to the ground terminal(GND)；
And a node between the source electrode of the fourth NMOS tube (N4) and the first resistor (R1) is used as a low-voltage output signal output end (Vs) and is connected to a post-stage circuit.
7. The wide-range voltage linear conversion circuit according to any one of claims 2 to 4, wherein the high voltage divider module (101) comprises a fifth NMOS transistor (N5), a second resistor (R2) and a third resistor (R3), wherein,
the drain electrode of the fifth NMOS tube (N5) is connected to the first voltage output end (V) of the power supply module (103)high) The grid electrode of the fifth NMOS tube (N5) is connected to an NMOS tube starting voltage input end (V)on)；
The second resistor (R2) and the third resistor (R3) are connected in series between the source of the fifth NMOS transistor (N5) and the Ground (GND);
the high voltage input signal (V)in) Is connected at a node between the source of the fifth NMOS transistor (N5) and the second resistor (R2);
the source follower module (102) is connected at a node between the second resistance (R2) and the third resistance (R3).
8. The wide range voltage linear conversion circuit of claim 7, wherein the source follower module (102) comprises a sixth NMOS transistor (N6) and a fourth resistor (R4), wherein,
the drain electrode of the sixth NMOS tube (N6) is connected to the second voltage output end (V) of the power supply module (103)low) A gate of the sixth NMOS transistor (N6) is connected to a node between the second resistor (R2) and the third resistor (R3), a source of the sixth NMOS transistor (N6) is connected to a first end of the fourth resistor (R4), and a second end of the fourth resistor (R4) is connected to the Ground (GND);
and a node between the source electrode of the sixth NMOS tube (N6) and the fourth resistor (R4) is used as a low-voltage output signal output end (Vs) and is connected to a post-stage circuit.
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| CN201922474173.8U CN211239696U (en) | 2019-12-31 | 2019-12-31 | Wide-range voltage linear conversion circuit |
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| CN201922474173.8U CN211239696U (en) | 2019-12-31 | 2019-12-31 | Wide-range voltage linear conversion circuit |
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