CN218973495U - Circuit structure for correcting output signal distortion of Hall sensor - Google Patents

Circuit structure for correcting output signal distortion of Hall sensor Download PDF

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Publication number
CN218973495U
CN218973495U CN202223386012.1U CN202223386012U CN218973495U CN 218973495 U CN218973495 U CN 218973495U CN 202223386012 U CN202223386012 U CN 202223386012U CN 218973495 U CN218973495 U CN 218973495U
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mos tube
mos
hall sensor
drain electrode
tubes
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胡钰林
齐文
贺永宁
张连元
贾毓
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Shaanxi Changling Maiteng Electronics Co ltd
Xian Jiaotong University
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Shaanxi Changling Maiteng Electronics Co ltd
Xian Jiaotong University
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Abstract

A circuit structure for correcting output signal distortion of a Hall sensor comprises a four-phase rotating current circuit, a first Hall sensor, a power supply voltage and a bias circuit, wherein an input end Vcm inputs a common-mode voltage control signal which is not influenced by MOS tube resistance of the first Hall sensor in an ideal state to an inverse input end of an operational amplifier, a negative feedback regulating circuit is formed by a second Hall sensor, the operational amplifier and MOS tubes 1-2, so that the control signal input by the input end Vcm is transmitted to the grid electrode of the MOS tubes M1-2, and the voltage of each node of the MOS tubes in the first Hall sensor and the four-phase rotating current circuit is regulated by controlling the grid electrode voltage of the MOS tubes M1-2, so that the output common-mode voltage signal returns to a stable value, and the distortion of the output signal of the Hall sensor is corrected.

Description

Circuit structure for correcting output signal distortion of Hall sensor
Technical Field
The utility model relates to the technical field of Hall sensors, in particular to a circuit structure for correcting output signal distortion of a Hall sensor.
Background
The Hall sensor manufactured based on the CMOS process can integrate the Hall sensor and the signal processing circuit on a chip, a rotating current circuit is generally adopted to modulate signals of the Hall sensor, a plurality of MOS tubes are generally adopted as circuit switches by the rotating current circuit, and the grid electrode of each MOS tube controls the MOS tube to be connected or disconnected according to clock signals. When the clock signal received by the grid electrode of the MOS tube is overturned, the conducted MOS tube connected with the Hall sensor is switched, the direction of the bias current flowing through the Hall sensor is changed, and the grid source voltage (V GS ) The on-resistance can also be changed, although the bias circuit provides bias current for the rotating current circuit in the prior art, so that the current flowing through the MOS tube is unchanged, the common-mode voltage is changed due to the resistance change, and the voltage of each node of the rotating current circuit is affected, so that the common-mode voltage signal output by the actual Hall sensor is different from the common-mode voltage of the original output signal of the Hall sensor, and the output signal is added with the common-mode voltage signal, so that the output signal of the Hall sensor is distorted.
Disclosure of Invention
In order to solve the defect that the output signal of the Hall sensor is distorted in the prior art, the utility model provides a circuit structure for correcting the output signal distortion of the Hall sensor.
The technical scheme of the utility model is as follows: a circuit structure for correcting output signal distortion of a Hall sensor comprises a four-phase rotating current circuit, a first Hall sensor arranged in the four-phase rotating current circuit, a power supply voltage for providing current for the four-phase rotating current circuit and the first Hall sensor, and a bias circuit for providing bias current for the four-phase rotating current circuit and the first Hall sensor;
the power supply voltage is also connected with a common-mode voltage correction circuit for correcting the common-mode voltage of the first Hall sensor, the common-mode voltage correction circuit comprises an input end Vcm, an operational amplifier, MOS tubes MP 1-M6 and a second Hall sensor, the power supply voltage provides current for a four-phase rotating current circuit through the MOS tube M1, the power supply voltage provides current for the second Hall sensor through the MOS tubes M2-3, the grid electrode of the MOS tube M3 is grounded, the second Hall sensor is connected with a bias circuit through the MOS tube M4, and the MOS tubes M5-6 are respectively connected with the W pole and the E pole of the second Hall sensor;
the input end Vcm inputs a control voltage signal for outputting a common-mode voltage to the inverting input end of the operational amplifier by a four-phase rotating current circuit, the second Hall sensor is connected to the non-inverting input end of the operational amplifier through MOS tubes M5-6, the output end of the operational amplifier is connected to the non-inverting input end of the operational amplifier through a capacitor, the output end of the operational amplifier is respectively connected with the grid electrodes of the MOS tubes M1-2, and the drain electrode of the MOS tube M1 is connected with the drain electrode of the MOS tube M2.
Preferably, the four-phase rotating current circuit comprises MOS tubes MN 1-12, MOS tubes MP 1-4, an output end Vout1 and an output end Vout2, the N pole of the first Hall sensor is connected with the drain of the MOS tube MN1, the drain of the MOS tube MN2, the drain of the MOS tube MP1 and the drain of the MOS tube MN3 respectively, the W pole of the first Hall sensor is connected with the drain of the MOS tube MN4, the drain of the MOS tube MN5, the drain of the MOS tube MP2 and the drain of the MOS tube MN6 respectively, the S pole of the first Hall sensor is connected with the drain of the MOS tube MP3, the drain of the MOS tube MN7, the drain of the MOS tube MN8 and the source of the MOS tube MN9 respectively, the E pole of the first Hall sensor is connected with the drain of the MOS tube MP4, the drain of the MOS tube MN10, the drain of the MOS tube MN11 and the source of the MOS tube MN12 respectively, the drain of the MOS tube MN2, the drain of the MOS tube MN5, the drain of the MOS tube MN9 and the drain of the MOS tube MN12 output common-mode voltage signals through the output end MN1, and the drain of the MOS tube MN4, the source of the MOS tube MN7, the drain of the MOS tube MN7 and the drain of the output clock signal through the output end of the MOS tube MN 1-11.
Preferably, the bias circuit comprises a bias current source I0, a Hall sensor bias current source Ibias and MOS tubes M7-13, wherein the bias current source I0 is sequentially connected with a drain electrode of the MOS tube M7, a grid electrode of the MOS tube M8, a grid electrode of the MOS tube M10 and a grid electrode of the MOS tube M12, the Hall sensor bias current source Ibias is sequentially connected with a drain electrode of the MOS tube M8, a grid electrode of the MOS tube M9, a grid electrode of the MOS tube M11 and a grid electrode of the MOS tube M13, a source electrode of the MOS tube M8 is connected with a drain electrode of the MOS tube M9, a source electrode of the MOS tube M12 is connected with a drain electrode of the MOS tube M13, a source electrode of the MOS tube M7, a source electrode of the MOS tube M9, a source electrode of the MOS tube M11 and a source electrode of the MOS tube M13 are grounded, and a drain electrode of the MOS tube M10 is connected with a source electrode of the MOS tube M5.
Preferably, the MOS tubes M1-3 are P-type MOS tubes, the MOS tubes M4-13 are N-type MOS tubes, the power supply voltage provides current for the four-phase rotating current circuit and the first Hall sensor through the MOS tube M1, the drains of the MOS tubes M1-2 are connected with the MOS tubes MP 1-4, the power supply voltage provides current for the second Hall sensor through the MOS tubes M2-3 in sequence, the N electrode of the second Hall sensor is connected with the drain of the MOS tube M3, and the S electrode of the second Hall sensor is connected with the MOS tube M4;
the source electrode of the MOS tube M12 is respectively connected with the drain electrodes of the MOS tube MN1, the MOS tube MN6, the MOS tube MN8 and the MOS tube MN10, the bias current source I0 is grounded through the MOS tube M7, the bias current sources Ibias of the Hall sensors are sequentially grounded through the MOS tubes M8-9, the four-phase rotating current circuit is sequentially grounded through the MOS tubes M12-13, and the second Hall sensors are sequentially grounded through the MOS tubes M10-11.
Preferably, the MOS tube M1, the MOS tube M2 and the MOS tube M5 are N-type MOS tubes, the MOS tube M3, the MOS tube M4 and the MOS tubes M6 to 13 are P-type MOS tubes, the four-phase rotating current circuit is grounded through the MOS tube M1, the MOS tube M1 is respectively connected with the MOS tube MN1, the MOS tube MN6, the MOS tube MN8 and the MOS tube MN10, the second hall sensor is grounded through the MOS tubes 2 to 3, the S pole of the second hall sensor is connected with the drain electrode of the MOS tube M3, and the N pole of the second hall sensor is connected with the drain electrode of the MOS tube M4;
the MOS tube M13 is connected with the MOS tubes MP 1-4 respectively, the power supply voltage sequentially passes through the MOS tubes M12-13 to supply current for the four-phase rotating current circuit and the first Hall sensor, the power supply voltage sequentially passes through the MOS tubes M10-11 and the MOS tube M4 to supply current for the second Hall sensor, the power supply voltage sequentially passes through the MOS tubes M8-9 to be connected with the Hall sensor bias current source Ibias, the current outflow end of the Hall sensor bias current source Ibias is grounded, the power supply voltage is connected with the bias current source I0 through the MOS tube M7, and the current outflow end of the bias current source I0 is grounded.
Preferably, the sizes of the P-type MOS tubes are the same, and the sizes of the N-type MOS tubes are the same.
The utility model has the beneficial effects that: the input end Vcm inputs a common-mode voltage control signal which is not influenced by the resistance of the MOS tube of the first Hall sensor under an ideal state to the reverse input end of the operational amplifier, and the negative feedback regulating circuit is composed of the second Hall sensor, the operational amplifier and the MOS tubes 1-2, so that the control signal input by the input end Vcm is transmitted to the grid electrodes of the MOS tubes M1-2, and the voltage of each node of the MOS tubes in the first Hall sensor and the four-phase rotating current circuit is regulated by controlling the voltage of the grid electrodes of the MOS tubes M1-2, so that the output common-mode voltage signal returns to a stable value, and the distortion of the output signal of the Hall sensor is corrected.
Drawings
FIG. 1 is a schematic diagram of a circuit structure of the present utility model;
fig. 2 is a schematic circuit diagram of a first embodiment;
fig. 3 is a schematic circuit diagram of a second embodiment.
Detailed Description
In order to make the technical problems, technical solutions and advantages to be solved more apparent, the following detailed description will be given with reference to the accompanying drawings and specific embodiments.
The technical scheme of the utility model is as follows: a circuit structure for correcting output signal distortion of a Hall sensor comprises a four-phase rotating current circuit, a first Hall sensor arranged in the four-phase rotating current circuit, a power supply voltage for providing current for the four-phase rotating current circuit and the first Hall sensor, and a bias circuit for providing bias current for the four-phase rotating current circuit and the first Hall sensor;
the power supply voltage is also connected with a common-mode voltage correction circuit for correcting the common-mode voltage of the first Hall sensor, as shown in FIG. 1, the common-mode voltage correction circuit comprises an input end Vcm, an operational amplifier, MOS tubes MP 1-M6 and a second Hall sensor, VDD in FIG. 1 is the power supply voltage, the power supply voltage supplies current to a four-phase rotating current circuit through the MOS tube M1, the power supply voltage supplies current to the second Hall sensor through the MOS tubes M2-3, the second Hall sensor is grounded at the grid electrode of the MOS tube M3, the second Hall sensor is connected with a bias circuit through the MOS tube M4, and the MOS tubes M5-6 are respectively connected with the W pole and the E pole of the second Hall sensor;
the input end Vcm inputs a control voltage signal for outputting a common-mode voltage to an inverting input end of the operational amplifier by a four-phase rotating current circuit, the second Hall sensor is connected to an in-phase input end of the operational amplifier through MOS tubes M5-6, an output end of the operational amplifier is connected to the in-phase input end of the operational amplifier through a capacitor, the output end of the operational amplifier is respectively connected with grid electrodes of the MOS tubes M1-2, and drain electrodes of the MOS tubes M1 and M2 are connected.
Circuit principle: the input end Vcm inputs a common-mode voltage control signal which is not influenced by MOS tube resistance of the first Hall sensor in an ideal state to the reverse input end of the operational amplifier, the common-mode voltage control signal is an average value of common-mode voltages of two output ends of a four-phase rotating current circuit of the first Hall sensor, and because the first Hall sensor and the second Hall sensor are connected in parallel, and the types, the numbers, the sizes and the connection modes of electric elements on the two circuits are the same, the common-mode voltage signal of the second Hall sensor follows the common-mode voltage change of the first Hall sensor, the second Hall sensor sends the changed common-mode voltage signal to the non-inverting input end of the operational amplifier, the voltage of MOS tubes 1-2 is fed back to the non-inverting input end of the operational amplifier, therefore, the operational amplifier, the first hall sensor and the MOS tubes 1-2 form negative feedback regulation, according to the characteristics of the operational amplifier, the control voltage of the input end Vcm is unchanged, the output voltage of the first hall sensor is forced to be equal to the voltage of the input end Vcm, so that the voltage signal input by the inverting input end of the operational amplifier is equal to the voltage signal of the output end, namely, the voltage signal input by the input end Vcm is given to the grid electrode of the MOS tube M1-2, at the moment, the voltage of the point A of the drain electrode of the MOS tube M1 is equal to the voltage of the point B of the drain electrode of the MOS tube M2, the voltage of each node of the MOS tubes in the first hall sensor and the four-phase rotating current circuit can be regulated by controlling the voltage of the two points A, B, and the output common-mode voltage signal of the first hall sensor is enabled to return to a stable value and is equal to the output common-mode voltage signal of the second hall sensor.
The four-phase rotating current circuit comprises MOS tubes MN 1-12, MOS tubes MP 1-4, an output end Vout1 and an output end Vout2, wherein the N electrode of a first Hall sensor is respectively connected with the drain electrode of the MOS tube MN1, the source electrode of the MOS tube MN2, the drain electrode of the MOS tube MP1 and the drain electrode of the MOS tube MN3, the W electrode of the first Hall sensor is respectively connected with the drain electrode of the MOS tube MN4, the source electrode of the MOS tube MN5, the drain electrode of the MOS tube MP2 and the drain electrode of the MOS tube MN6, the S electrode of the first Hall sensor is respectively connected with the drain electrode of the MOS tube MP3, the drain electrode of the MOS tube MN7, the drain electrode of the MOS tube MN8 and the source electrode of the MOS tube MN9, the drain electrode of the MOS tube MN10, the drain electrode of the MOS tube MN11 and the source electrode of the MOS tube MN12, the drain electrode of the MOS tube MN2, the source electrode of the MOS tube MN9 and the MOS tube MN12 outputs signals through the output end Vout1, the source electrode of the MOS tube MN3, the source electrode of the MOS tube MN7 and the MOS tube MN11 receives common-mode voltage signals through the output end Vout2 and the common mode voltage signals of the MOS tube MP 1-Vout 1 and the MOS tube MP 1-Vout 1.
The bias circuit comprises a bias current source I0, a Hall sensor bias current source Ibias and MOS tubes M7-13, wherein the bias current source I0 is sequentially connected with the drain electrode of the MOS tube M7, the grid electrode of the MOS tube M8, the grid electrode of the MOS tube M10 and the grid electrode of the MOS tube M12, the Hall sensor bias current source Ibias is sequentially connected with the drain electrode of the MOS tube M8, the grid electrode of the MOS tube M9, the grid electrode of the MOS tube M11 and the grid electrode of the MOS tube M13, the source electrode of the MOS tube M10 is connected with the drain electrode of the MOS tube M11, the source electrode of the MOS tube M12 is connected with the drain electrode of the MOS tube M13, the bias current source I0 enables the MOS tube M7, the grid electrode of the MOS tube M8, the grid electrode of the MOS tube M10 and the grid electrode of the MOS tube M12 to work in a saturation region, the grid electrode of the MOS tube M9, the grid electrode of the MOS tube M11 and the grid electrode of the MOS tube M13, the Hall sensor bias current source Ibias enables the MOS tube M9, the MOS tube M11 and the MOS tube M13 to work in the saturation region, and the Hall sensor bias current source Ibias, and the MOS tube M9 can enable the current to flow through the MOS tube M9 and the MOS tube M9 to flow through the same principle as well as the Hall device M9 and the bias current which can flow through the MOS tube M9 and the MOS tube M9 to pass through the bias current with the same current which flows through the bias current and M9.
Embodiment one: based on the above-mentioned signal offset correction circuit structure of the hall sensor, as shown in fig. 2, the MOS transistors M1-3 are P-type MOS transistors, the MOS transistors M4-13 are N-type MOS transistors, the power supply voltage provides current for the four-phase rotating current circuit and the first hall sensor through the MOS transistor M1, the drains of the MOS transistors M1-2 are all connected with the MOS transistors MP 1-4, the power supply voltage provides current for the second hall sensor through the MOS transistors M2-3 in sequence, the N pole of the second hall sensor is connected with the drain of the MOS transistor M3, and the S pole of the second hall sensor is connected with the MOS transistor M4;
the Hall device bias current source Ibias provides stable voltage for the MOS tube to the grid electrode of the M9, the grid electrode of the MOS tube M11 and the grid electrode of the MOS tube M13, so that the MOS tube is conducted to the M9, the MOS tube M11 and the MOS tube M13, the bias current source I0 is grounded through the MOS tube M7, the Hall sensor bias current source Ibias is grounded through the MOS tubes M8-9 in sequence, the four-phase rotating current circuit is grounded through the MOS tubes M12-13 in sequence, and the second Hall sensor is grounded through the MOS tubes M10-11 in sequence.
Embodiment two: based on a Hall sensor signal offset correction circuit structure, as shown in fig. 3, an MOS tube M1, an MOS tube M2 and an MOS tube M5 are N-type MOS tubes, an MOS tube M3, an MOS tube M4 and MOS tubes M6-13 are P-type MOS tubes, a bias current source I0 provides stable voltages for the grid electrodes of the MOS tube M7, the grid electrodes of the MOS tube M8, the grid electrodes of the MOS tube M10 and the grid electrodes of the MOS tube M12, so that the MOS tube M7, the MOS tube M8, the MOS tube M10 and the MOS tube M12 are conducted, a Hall device bias current source Ibias provides stable voltages for the grid electrodes of the MOS tube M9, the grid electrodes of the MOS tube M11 and the grid electrodes of the MOS tube M13, so that the MOS tube M9, the MOS tube M11 and the MOS tube M13 are conducted, a four-phase rotation current circuit is grounded through the MOS tube M1, the MOS tube M1 is respectively connected with the MOS tube MN1, the MOS tube MN6, the MOS tube MN8 and the MOS tube MN10, the second Hall sensor is grounded through the MOS tube 2-3, the S electrode of the second Hall sensor is connected with the drain electrode of the MOS tube M3, and the drain electrode of the second Hall sensor is connected with the drain electrode of the MOS tube M4;
MOS tube M13 is connected with MOS tube MP1 ~ 4 respectively, power supply voltage loops through MOS tube M12 ~ 13 for four looks rotation current circuit and first hall sensor provide current, power supply voltage loops through MOS tube M10 ~ 11, MOS tube M4 provides current for the second hall sensor, power supply voltage loops through MOS tube M8 ~ 9 and is connected with hall sensor bias current source Ibias, the electric current outflow ground of hall sensor bias current source Ibias, power supply voltage passes through MOS tube M7 and is connected with bias current source I0, bias current source I0's electric current outflow ground, in this embodiment, power supply voltage passes the electric current to MOS tube M7 ~ 9, but the electric current of MOS tube M7 ~ 9 is through bias current source I0 and hall sensor bias current source Ibias control, namely bias current source I0 and hall sensor bias current source Ibias provide bias current.
All the P-type MOS tubes in the utility model have the same size, and all the N-type MOS tubes have the same size.
The foregoing description is only of the preferred embodiments of the present utility model and is not intended to limit the scope of the present utility model. Any modification, equivalent replacement, improvement, etc. made within the spirit and principle of the present utility model are included in the protection scope of the present utility model.

Claims (6)

1. The utility model provides a circuit structure for correcting hall sensor output signal distortion, includes four-phase rotation current circuit, sets up the first hall sensor in four-phase rotation current circuit, provides the power supply voltage of electric current for four-phase rotation current circuit and first hall sensor, and provides bias current for four-phase rotation current circuit and first hall sensor, its characterized in that:
the power supply voltage is also connected with a common-mode voltage correction circuit for correcting the common-mode voltage of the first Hall sensor, the common-mode voltage correction circuit comprises an input end Vcm, an operational amplifier, MOS tubes M1-6 and a second Hall sensor, the power supply voltage provides current for a four-phase rotating current circuit through the MOS tube M1, the power supply voltage provides current for the second Hall sensor through the MOS tubes M2-3, the grid electrode of the MOS tube M3 is grounded, the second Hall sensor is connected with a bias circuit through the MOS tube M4, and the MOS tubes M5-6 are respectively connected with the W pole and the E pole of the second Hall sensor;
the input end Vcm inputs a control voltage signal for outputting a common-mode voltage to the inverting input end of the operational amplifier by a four-phase rotating current circuit, the second Hall sensor is connected to the non-inverting input end of the operational amplifier through MOS tubes M5-6, the output end of the operational amplifier is connected to the non-inverting input end of the operational amplifier through a capacitor, the output end of the operational amplifier is respectively connected with the grid electrodes of the MOS tubes M1-2, and the drain electrode of the MOS tube M1 is connected with the drain electrode of the MOS tube M2.
2. A circuit arrangement for correcting distortion of hall sensor output signals as claimed in claim 1, wherein: the four-phase rotating current circuit comprises MOS tubes MN 1-12, MOS tubes MP 1-4, an output end Vout1 and an output end Vout2, wherein the N electrode of a first Hall sensor is respectively connected with the drain electrode of the MOS tube MN1, the drain electrode of the MOS tube MN2, the drain electrode of the MOS tube MP1 and the drain electrode of the MOS tube MN3, the W electrode of the first Hall sensor is respectively connected with the drain electrode of the MOS tube MN4, the drain electrode of the MOS tube MN5, the drain electrode of the MOS tube MP2 and the drain electrode of the MOS tube MN6, the S electrode of the first Hall sensor is respectively connected with the drain electrode of the MOS tube MP3, the drain electrode of the MOS tube MN7, the drain electrode of the MOS tube MN8 and the source electrode of the MOS tube MN9, the drain electrode of the MOS tube MN11 and the source electrode of the MOS tube MN12, the drain electrode of the MOS tube MN2, the drain electrode of the MOS tube MN5, the drain electrode of the MOS tube MN9 and the drain electrode of the MOS tube MN1 output common-mode voltage signal through the output end, the drain electrode of the MOS tube MN3, the drain electrode of the MOS tube MN4, the drain electrode of the MOS tube MP 7, the drain electrode of the MOS tube MN8 and the drain electrode of the MOS tube MN 1-drain electrode of the MOS tube 12 output clock signal through the output end of the MOS tube 1-2.
3. A circuit arrangement for correcting distortion of hall sensor output signals as claimed in claim 2, wherein: the bias circuit comprises a bias current source I0, a Hall sensor bias current source Ibias and MOS tubes M7-13, wherein the bias current source I0 is sequentially connected with a drain electrode of the MOS tube M7, a grid electrode of the MOS tube M8, a grid electrode of the MOS tube M10 and a grid electrode of the MOS tube M12, the Hall sensor bias current source Ibias is sequentially connected with a drain electrode of the MOS tube M8, a grid electrode of the MOS tube M9, a grid electrode of the MOS tube M11 and a grid electrode of the MOS tube M13, a source electrode of the MOS tube M8 is connected with a drain electrode of the MOS tube M9, a source electrode of the MOS tube M12 is connected with a drain electrode of the MOS tube M13, a source electrode of the MOS tube M7, a source electrode of the MOS tube M9, a source electrode of the MOS tube M11 and a source electrode of the MOS tube M13 are grounded, and a drain electrode of the MOS tube M10 is connected with a source electrode of the MOS tube M5.
4. A circuit arrangement for correcting distortion of hall sensor output signals as claimed in claim 3, wherein: the MOS tubes M1-3 are P-type MOS tubes, the MOS tubes M4-13 are N-type MOS tubes, the power supply voltage provides current for the four-phase rotating current circuit and the first Hall sensor through the MOS tube M1, the drains of the MOS tubes M1-2 are connected with the MOS tubes MP 1-4, the power supply voltage provides current for the second Hall sensor through the MOS tubes M2-3 in sequence, the N pole of the second Hall sensor is connected with the drain of the MOS tube M3, and the S pole of the second Hall sensor is connected with the MOS tube M4;
the source electrode of the MOS tube M12 is respectively connected with the drain electrodes of the MOS tube MN1, the MOS tube MN6, the MOS tube MN8 and the MOS tube MN10, the bias current source I0 is grounded through the MOS tube M7, the bias current sources Ibias of the Hall sensors are sequentially grounded through the MOS tubes M8-9, the four-phase rotating current circuit is sequentially grounded through the MOS tubes M12-13, and the second Hall sensors are sequentially grounded through the MOS tubes M10-11.
5. A circuit arrangement for correcting distortion of hall sensor output signals as claimed in claim 3, wherein: the MOS tube M1, the MOS tube M2 and the MOS tube M5 are N-type MOS tubes, the MOS tube M3, the MOS tube M4 and the MOS tubes M6-13 are P-type MOS tubes, the four-phase rotating current circuit is grounded through the MOS tube M1, the MOS tube M1 is respectively connected with the MOS tube MN1, the MOS tube MN6, the MOS tube MN8 and the MOS tube MN10, the second Hall sensor is grounded through the MOS tubes 2-3, the S electrode of the second Hall sensor is connected with the drain electrode of the MOS tube M3, and the N electrode of the second Hall sensor is connected with the drain electrode of the MOS tube M4;
the MOS tube M13 is connected with the MOS tubes MP 1-4 respectively, the power supply voltage sequentially passes through the MOS tubes M12-13 to supply current for the four-phase rotating current circuit and the first Hall sensor, the power supply voltage sequentially passes through the MOS tubes M10-11 and the MOS tube M4 to supply current for the second Hall sensor, the power supply voltage sequentially passes through the MOS tubes M8-9 to be connected with the Hall sensor bias current source Ibias, the current outflow end of the Hall sensor bias current source Ibias is grounded, the power supply voltage is connected with the bias current source I0 through the MOS tube M7, and the current outflow end of the bias current source I0 is grounded.
6. A circuit arrangement for correcting distortion of hall sensor output signals according to claim 4 or 5, characterized in that: the sizes of the P-type MOS tubes are the same, and the sizes of the N-type MOS tubes are the same.
CN202223386012.1U 2022-12-16 2022-12-16 Circuit structure for correcting output signal distortion of Hall sensor Active CN218973495U (en)

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