CN218969355U

CN218969355U - Microwave plasma reaction cavity and equipment for chemical vapor deposition

Info

Publication number: CN218969355U
Application number: CN202222851220.8U
Authority: CN
Inventors: 陈永超; 张坤锋; 张粉红
Original assignee: Huahe Jidian Xiamen Semiconductor Technology Co ltd
Current assignee: Huahe Jidian Xiamen Semiconductor Technology Co ltd
Priority date: 2022-10-28
Filing date: 2022-10-28
Publication date: 2023-05-05
Anticipated expiration: 2032-10-28

Abstract

The utility model discloses a microwave plasma reaction cavity and equipment for chemical vapor deposition, which comprise a reaction cavity, wherein quartz windows are arranged above the reaction cavity, a plurality of mounting holes are formed in the upper part and the lower part of the reaction cavity, two horizontal observation windows are symmetrically connected and arranged on the reaction cavity, an oblique observation port and a temperature measurement window are connected and arranged on the reaction cavity, the oblique observation port and the temperature measurement window are in axisymmetric structures, an air inlet pipe is connected and arranged above the reaction cavity, a substrate table is movably connected and arranged in the reaction cavity, a substrate is placed on the substrate table, a shielding stop block is connected and arranged on the substrate table, a material taking and discharging port is arranged below the reaction cavity, a door plate stop block is arranged in the material taking and discharging port, and a vacuum tube is connected and arranged at the bottom of the reaction cavity. Compared with the prior art, the utility model has the advantages that: novel structure, reasonable in design, get material convenience, grow evenly, survey convenience.

Description

Microwave plasma reaction cavity and equipment for chemical vapor deposition

Technical Field

The utility model relates to the technical field of diamond production, in particular to a microwave plasma reaction cavity and equipment for chemical vapor deposition.

Background

Diamond, commonly called "diamond drill", is a mineral composed of carbon element, is an allotrope of graphite, has a chemical formula of C, is also a common original body of diamond, is the hardest substance naturally existing in nature, graphite can form artificial diamond at high temperature and high pressure, and the diamond has very wide application, for example: cutting tools in artworks and industries are also precious stones.

The diamond not only can be used as a precious stone with collection value, but also has very high application value in different fields due to the characteristics of high strength, high hardness, small thermal expansion coefficient, high thermal conductivity, high chemical stability, excellent light transmittance and semiconductor. The current method for artificially synthesizing diamond has a direct current arc plasma jet method, a high-temperature high-pressure method, a hot wire chemical vapor deposition method, a microwave plasma chemical vapor deposition Method (MPCVD) and the like, and the microwave plasma chemical vapor deposition Method (MPCVD) becomes the preferred method for synthesizing diamond due to a series of advantages of easiness in controlling plasma excited by microwaves, high plasma density, no motor pollution and the like.

At present, the mode that current microwave plasma reaction chamber adopted the cavity that opens and shuts gets the blowing, it is comparatively inconvenient, when the reaction chamber grows diamond, the bottom space is spacious after the substrate platform rises, influence cavity resonant structure, lead to the ion body of substrate platform top inhomogeneous, thereby influence diamond growth homogeneity, current microwave plasma reaction chamber heating method is substrate platform embeds heating device and microwave heating, adopt temperature sensor temperature measurement, indirect monitoring substrate surface temperature, be difficult to the real-time tracking substrate surface temperature, thereby track diamond growth state, the observation window is in the left and right sides, with the substrate parallel and level of growing diamond, be inconvenient for observing substrate surface growth condition, can not satisfy current growth demand, therefore, a microwave plasma reaction chamber and equipment for chemical vapor deposition are needed to solve above problem.

Disclosure of Invention

The utility model aims to solve the technical problems and provide the microwave plasma reaction cavity and the equipment for chemical vapor deposition, which have the advantages of novel structure, reasonable design, convenient material taking, uniform growth and convenient observation.

In order to solve the technical problems, the technical scheme provided by the utility model is as follows: the utility model provides a microwave plasma reaction chamber and equipment for chemical vapor deposition, includes the reaction cavity, the reaction cavity top is equipped with quartz window, reaction cavity top and below all are equipped with a plurality of mounting holes, symmetrical connection is equipped with two horizontal observation windows on the reaction cavity, connect on the reaction cavity and be equipped with oblique viewing aperture and temperature measurement window, oblique viewing aperture and temperature measurement window are axisymmetric structure, the reaction cavity top is connected and is equipped with the intake pipe, swing joint is equipped with the substrate platform in the reaction cavity, the substrate has been placed on the substrate platform, the connection is equipped with shielding dog on the substrate platform, the reaction cavity below is equipped with gets the drain hole, get the drain hole interconnect and be equipped with the door plant dog, the connection of reaction cavity bottom is equipped with the vacuum tube.

As an improvement, the reaction cavity, the horizontal observation window, the inclined observation port, the temperature measurement window and the material taking and placing port are integrally formed.

As an improvement, the inclined observation port forms an included angle of 30-45 degrees with the horizontal plane.

As an improvement, the temperature measuring window forms an included angle of 135-150 degrees with the horizontal plane.

As an improvement, the whole substrate table is of a T-shaped structure, a cavity is arranged in the substrate table, and a cooling water inlet and a cooling water outlet are connected to the cavity.

As an improvement, the shielding block moves up and down and rotates with the substrate table at the same time.

After adopting the structure, the utility model has the following advantages:

1. the utility model has novel structure and reasonable design, is provided with the material taking and discharging port, is more convenient for material taking and discharging, and can ensure the structural integrity of the reaction cavity and reduce the influence of the material taking and discharging port on the resonance structure of the reaction cavity by arranging the door plate stop block;

2. the shielding stop block is additionally arranged below the substrate table, so that the influence of an open space at the bottom on the structure of the reaction cavity after the substrate table is lifted is avoided, the uniformity of the ions on the substrate table can be improved, and the thickness of the grown diamond film is more uniform;

3. the inclined observation port is arranged, so that the state of diamond growth on the surface of the substrate can be observed conveniently, and the observation is more visual;

4. the arrangement of the temperature measuring window is convenient for the infrared thermometer to check the actual temperature of the surface of the substrate in real time, namely the growth temperature of the diamond, and is more convenient and better in practicality.

Drawings

Fig. 1 is a cross-sectional view of a microwave plasma reaction chamber and apparatus for chemical vapor deposition according to the present utility model.

FIG. 2 is a cross-sectional view of a microwave plasma reaction chamber and apparatus for chemical vapor deposition according to the present utility model.

Fig. 3 is a top view of a microwave plasma reaction chamber and apparatus for chemical vapor deposition in accordance with the present utility model.

Fig. 4 is a cross-sectional view taken along the direction A-A in fig. 3.

Fig. 5 is a schematic structural view of a microwave plasma reaction chamber for chemical vapor deposition and an apparatus in an operating state according to the present utility model.

FIG. 6 is a schematic view of a microwave plasma reaction chamber and apparatus for chemical vapor deposition in a sheeted state according to the present utility model.

As shown in the figure: 1. a reaction chamber; 2. a quartz window; 3. a mounting hole; 4. a horizontal viewing window; 5. an oblique viewing port; 6. a temperature measurement window; 7. an air inlet pipe; 8. a substrate table; 9. a substrate; 10. a shielding block; 11. taking a material outlet; 12. a door panel stop; 13. a vacuum tube; 14. a cavity; 15. a cooling water inlet; 16. a cooling water outlet; 17. an infrared thermometer.

Detailed Description

In the description of the present utility model, it should be understood that the terms "upper", "lower", "front", "rear", "left", "right", "inner", "outer", "center", etc. indicate orientations or positional relationships based on the orientations or positional relationships shown in the drawings, are merely for convenience in describing the present utility model and simplifying the description, and do not indicate or imply that the devices or elements referred to must have a specific orientation configuration and operation, and thus are not to be construed as limiting the present utility model.

In the description of the present utility model, it should also be noted that, unless explicitly stated or limited otherwise, the terms "provided with," "mounted to," "connected to," and the like are to be construed broadly, and may be, for example, fixedly connected, detachably connected, or integrally connected, mechanically connected, electrically connected, directly connected, indirectly connected through an intermediary, or in communication between two elements. The specific meaning of the above terms in the present utility model can be understood by those of ordinary skill in the art according to the specific circumstances.

The present utility model will be described in further detail with reference to the accompanying drawings.

Embodiment one:

the utility model provides a microwave plasma reaction chamber and equipment for chemical vapor deposition, includes reaction chamber 1, reaction chamber 1 top is equipped with quartz window 2, reaction chamber 1 top and below all are equipped with a plurality of mounting holes 3, symmetrical connection is equipped with two horizontal viewing windows 4 on the reaction chamber 1, the connection is equipped with oblique viewing port 5 and temperature measurement window 6 on the reaction chamber 1, 30 contained angles are personally submitted to oblique viewing port 5 and level, 150 contained angles are personally submitted to temperature measurement window 6 and are personally submitted to the level, oblique viewing port 5 and temperature measurement window 6 are axisymmetric structure, reaction chamber 1 top connection is equipped with intake pipe 7, swing joint is equipped with substrate table 8 in the reaction chamber 1, substrate table 8 is overall to be T font structure, be equipped with cavity 14 in the substrate table 8, connect on the cavity 14 and be equipped with cooling water inlet 15 and cooling water outlet 16, substrate table 8 is last to be connected and be equipped with shielding dog 10, shielding dog 10 and substrate table 8 are gone up and down and are rotated simultaneously and are personally submitted 150 contained angles with the level, reaction chamber 1 is equipped with the reaction chamber 1, take out material window 11, take out the door plant 1.

Embodiment two:

the utility model provides a microwave plasma reaction chamber and equipment for chemical vapor deposition, includes reaction chamber 1, reaction chamber 1 top is equipped with quartz window 2, reaction chamber 1 top and below all are equipped with a plurality of mounting holes 3, symmetrical connection is equipped with two horizontal viewing windows 4 on the reaction chamber 1, the connection is equipped with oblique viewing port 5 and temperature measurement window 6 on the reaction chamber 1, 45 contained angles are personally submitted to oblique viewing port 5 and level, 135 contained angles are personally submitted to temperature measurement window 6 and are personally submitted to the level, oblique viewing port 5 and temperature measurement window 6 are axisymmetric structure, reaction chamber 1 top connection is equipped with intake pipe 7, swing joint is equipped with substrate table 8 in the reaction chamber 1, substrate table 8 is overall to be T font structure, be equipped with cavity 14 in the substrate table 8, connect on the cavity 14 and be equipped with cooling water inlet 15 and cooling water outlet 16, substrate table 8 is last to be connected and be equipped with shielding dog 10, shielding dog 10 and substrate table 8 are gone up and down and are rotated simultaneously and are personally submitted 135 contained angles, reaction chamber 1 is equipped with the reaction chamber 1, take out material window 11, take out the door plant 1.

In the concrete implementation of the utility model, the reaction cavity 1 and the door plate baffle block 12 are made of stainless steel, the shielding baffle block 10 is made of aluminum, the substrate table 8 is moved down to the material taking and placing opening 11, the door plate baffle block 12 is opened, the substrate 9 is placed on the substrate table 8 from the material taking and placing opening 11, then the door plate baffle block 12 is closed, the substrate table 8 is controlled to rise to be flush with the horizontal observation window 4, the vacuum tube 13 is used for vacuumizing the inside of the reaction cavity 1, the microwave generator is opened, microwaves can irradiate the substrate 9 from the quartz window 2, a proper amount of reaction gas can be filled into the reaction cavity 1 through the air inlet pipe 7, the growth of diamond on the substrate 9 is promoted, the growth state of diamond around the substrate 9 can be observed through the horizontal observation window 4, the growth state of diamond on the surface of the substrate 9 can be observed through the oblique observation opening 5, through temperature measurement window 6, make things convenient for infrared thermometer 17 real-time check substrate 9 surface's actual temperature, when infrared thermometer 17 carries out the temperature measurement, can observe the position that infrared thermometer 17 shines through horizontal observation window 4 and oblique viewing aperture 5, be convenient for infrared thermometer 17 carries out accurate temperature measurement to each position on substrate 9 surface, more be favorable to diamond production thick more even, after diamond finishes growing, close microwave generator, control cooling water gets into cavity 14 from cooling water inlet 15, cool down suitably substrate 9, after the cooling is accomplished, cooling water is discharged from cooling water outlet 16, control substrate table 8 moves down to getting the relief hole 11 department, open door plant dog 12, take out substrate 9 can, easy operation, get the material convenience, diamond's growth is more even, the practicality is better.

The utility model and its embodiments have been described above with no limitation, and the actual construction is not limited to the embodiments of the utility model as shown in the drawings. In summary, if one of ordinary skill in the art is informed by this disclosure, a structural manner and an embodiment similar to the technical solution should not be creatively devised without departing from the gist of the present utility model.

Claims

1. A microwave plasma reaction chamber and apparatus for chemical vapor deposition, comprising a reaction chamber (1), characterized in that: the reaction chamber (1) top is equipped with quartz window (2), reaction chamber (1) top and below all are equipped with a plurality of mounting holes (3), symmetrical connection is equipped with two horizontal observation windows (4) on reaction chamber (1), be equipped with oblique viewing aperture (5) and temperature measurement window (6) on reaction chamber (1), oblique viewing aperture (5) and temperature measurement window (6) are axisymmetric structure, reaction chamber (1) top is connected and is equipped with intake pipe (7), swing joint is equipped with substrate stage (8) in reaction chamber (1), substrate stage (8) are last to have placed substrate (9), be equipped with shielding dog (10) on substrate stage (8) connection, reaction chamber (1) below is equipped with gets and places material mouth (11), get material mouth (11) in-connection is equipped with door plant dog (12), reaction chamber (1) bottom is connected and is equipped with vacuum tube (13).

2. The microwave plasma reaction chamber and apparatus for chemical vapor deposition according to claim 1, wherein: the reaction cavity (1) is integrally formed with the horizontal observation window (4), the oblique observation port (5), the temperature measurement window (6) and the taking and placing port (11).

3. The microwave plasma reaction chamber and apparatus for chemical vapor deposition according to claim 1, wherein: the inclined observation port (5) forms an included angle of 30-45 degrees with the horizontal plane.

4. The microwave plasma reaction chamber and apparatus for chemical vapor deposition according to claim 1, wherein: the temperature measuring window (6) forms an included angle of 135-150 degrees with the horizontal plane.

5. The microwave plasma reaction chamber and apparatus for chemical vapor deposition according to claim 1, wherein: the substrate table (8) is of a T-shaped structure as a whole, a cavity (14) is arranged in the substrate table (8), and a cooling water inlet (15) and a cooling water outlet (16) are connected to the cavity (14).

6. The microwave plasma reaction chamber and apparatus for chemical vapor deposition according to claim 1, wherein: the shielding block (10) and the substrate table (8) move up and down and rotate at the same time.