CN113512717A - Chemical vapor deposition furnace - Google Patents
Chemical vapor deposition furnace Download PDFInfo
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- CN113512717A CN113512717A CN202110892909.2A CN202110892909A CN113512717A CN 113512717 A CN113512717 A CN 113512717A CN 202110892909 A CN202110892909 A CN 202110892909A CN 113512717 A CN113512717 A CN 113512717A
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- 238000005229 chemical vapour deposition Methods 0.000 title claims abstract description 23
- 239000007789 gas Substances 0.000 claims abstract description 141
- 239000002994 raw material Substances 0.000 claims abstract description 93
- 238000000151 deposition Methods 0.000 claims abstract description 57
- 230000008021 deposition Effects 0.000 claims abstract description 57
- 238000009826 distribution Methods 0.000 claims abstract description 24
- 239000012159 carrier gas Substances 0.000 claims abstract description 14
- 238000010438 heat treatment Methods 0.000 claims description 17
- 230000007246 mechanism Effects 0.000 claims description 9
- 238000001816 cooling Methods 0.000 claims description 3
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 claims description 3
- 239000011810 insulating material Substances 0.000 claims 1
- SBIBMFFZSBJNJF-UHFFFAOYSA-N selenium;zinc Chemical compound [Se]=[Zn] SBIBMFFZSBJNJF-UHFFFAOYSA-N 0.000 description 12
- 239000007788 liquid Substances 0.000 description 10
- 239000000463 material Substances 0.000 description 10
- 239000003085 diluting agent Substances 0.000 description 5
- SPVXKVOXSXTJOY-UHFFFAOYSA-N selane Chemical compound [SeH2] SPVXKVOXSXTJOY-UHFFFAOYSA-N 0.000 description 5
- 229910000058 selane Inorganic materials 0.000 description 5
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 description 4
- 230000008020 evaporation Effects 0.000 description 4
- 238000001704 evaporation Methods 0.000 description 4
- 238000000034 method Methods 0.000 description 4
- 239000000725 suspension Substances 0.000 description 4
- 230000003028 elevating effect Effects 0.000 description 3
- 238000005516 engineering process Methods 0.000 description 3
- 229910002804 graphite Inorganic materials 0.000 description 3
- 239000010439 graphite Substances 0.000 description 3
- 239000012774 insulation material Substances 0.000 description 3
- 238000004519 manufacturing process Methods 0.000 description 3
- 230000008569 process Effects 0.000 description 3
- 230000009286 beneficial effect Effects 0.000 description 2
- 230000008859 change Effects 0.000 description 2
- 238000002156 mixing Methods 0.000 description 2
- 230000003287 optical effect Effects 0.000 description 2
- 238000002360 preparation method Methods 0.000 description 2
- 238000010521 absorption reaction Methods 0.000 description 1
- 230000004888 barrier function Effects 0.000 description 1
- 230000005540 biological transmission Effects 0.000 description 1
- 238000009529 body temperature measurement Methods 0.000 description 1
- 238000004364 calculation method Methods 0.000 description 1
- 229910052799 carbon Inorganic materials 0.000 description 1
- 239000000919 ceramic Substances 0.000 description 1
- 229910010293 ceramic material Inorganic materials 0.000 description 1
- 239000003638 chemical reducing agent Substances 0.000 description 1
- 239000000567 combustion gas Substances 0.000 description 1
- 239000002131 composite material Substances 0.000 description 1
- 239000013078 crystal Substances 0.000 description 1
- 238000005137 deposition process Methods 0.000 description 1
- 238000009792 diffusion process Methods 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 239000002657 fibrous material Substances 0.000 description 1
- 239000012535 impurity Substances 0.000 description 1
- 229910010272 inorganic material Inorganic materials 0.000 description 1
- 239000011147 inorganic material Substances 0.000 description 1
- 238000009434 installation Methods 0.000 description 1
- 238000011031 large-scale manufacturing process Methods 0.000 description 1
- 239000002245 particle Substances 0.000 description 1
- 230000000149 penetrating effect Effects 0.000 description 1
- 239000000843 powder Substances 0.000 description 1
- 230000002035 prolonged effect Effects 0.000 description 1
- 239000000376 reactant Substances 0.000 description 1
- 239000011214 refractory ceramic Substances 0.000 description 1
- 238000004088 simulation Methods 0.000 description 1
- 239000007787 solid Substances 0.000 description 1
- 238000006467 substitution reaction Methods 0.000 description 1
- 238000010408 sweeping Methods 0.000 description 1
- 238000009827 uniform distribution Methods 0.000 description 1
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- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/22—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of inorganic material, other than metallic material
- C23C16/30—Deposition of compounds, mixtures or solid solutions, e.g. borides, carbides, nitrides
- C23C16/305—Sulfides, selenides, or tellurides
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/448—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for generating reactive gas streams, e.g. by evaporation or sublimation of precursor materials
- C23C16/4481—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for generating reactive gas streams, e.g. by evaporation or sublimation of precursor materials by evaporation using carrier gas in contact with the source material
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- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/455—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
- C23C16/45563—Gas nozzles
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/52—Controlling or regulating the coating process
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- Chemical & Material Sciences (AREA)
- General Chemical & Material Sciences (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Engineering & Computer Science (AREA)
- Materials Engineering (AREA)
- Mechanical Engineering (AREA)
- Metallurgy (AREA)
- Organic Chemistry (AREA)
- Inorganic Chemistry (AREA)
- Physical Vapour Deposition (AREA)
Abstract
The invention discloses a chemical vapor deposition furnace, which comprises a furnace body, wherein a deposition chamber is arranged in the furnace body, the top of the deposition chamber is connected with a vacuum pipeline, the bottom of the deposition chamber is arranged on a crucible cover, a raw material crucible is arranged at the bottom of the crucible cover, and a gas leading-in device is also arranged on the surface of the crucible cover corresponding to the deposition chamber; the gas leading-in device comprises a plurality of gas boxes arranged in parallel, a plurality of gas nozzles are arranged on the gas boxes, two adjacent gas boxes are respectively communicated with the raw material crucible and the mixed raw material gas inlet channel, the raw material crucible is further communicated with the carrier gas inlet channel, and a gas distribution plate is arranged in each gas box. The invention can obviously improve the uniformity of the proportion of the raw materials in the deposition space, and is easier to deposit to obtain products with larger area and uniform thickness.
Description
Technical Field
The invention relates to the technical field of chemical vapor deposition, in particular to a chemical vapor deposition furnace.
Background
Chemical Vapor Deposition (CVD) has been widely used to prepare a variety of inorganic materials: such as fibrous materials for composite materials (e.g. B, B)4C) Thin layer material for diffusion barrier layer (e.g. ZrO)2) Powder material for fine ceramics (e.g. Al)2O3SiC) for infrared windows (e.g., ZnS, ZnSe). The CVD technology is adopted to prepare ZnS and ZnSe crystals, so that the method has the advantages of high purity, high density, small absorption, excellent optical performance and the like, is easy to realize the preparation of large-size materials, and is the mainstream technology for producing ZnS and ZnSe materials at present.
The technical scheme for preparing ZnS (ZnSe) by a Chemical Vapor Deposition (CVD) technology comprises the following steps: the crucible for containing raw material Zn is arranged at the bottom in the furnace chamber, the deposition chamber formed by splicing graphite plates is arranged at the upper part, the crucible and the deposition chamber are respectively heated to set temperatures, then carrier gas Ar is introduced to the surface of molten Zn to carry Zn steam into the deposition chamber, and simultaneously H2S(H2Se) gas diluted with Ar is also supplied to the deposition chamber, H2S(H2Se) and Zn react on a graphite plate to generate solid ZnS (ZnSe), and after a period of deposition, a blocky polycrystalline ZnS (ZnSe) material with a certain thickness can be finally obtained.
With the development of the infrared market, the demand for large-size zns (znse) materials and the mass production of the materials is more and more urgent. In the specific implementation process of the technical process, the needed products are mostly large-size plates, so that the deposition chamber is mostly in a cuboid structure and is prepared in a large size, and after the deposition furnace is enlarged, the most critical problem is how to solve the uniformity problem of the large-size materials because the space of the deposition chamber is enlarged and the deposition period needs to be prolonged.
Due to the space of the deposition chamberLarger, in existing plants H2S(H2Se) and Zn vapor are introduced into the deposition chamber through a plurality of gas holes, and H2S(H2Se) gas is controlled by a multi-path gas mass flow meter, so that the gas flow of each air hole can be kept consistent, but Zn vapor is carried into a deposition chamber by Ar gas sweeping the molten Zn liquid surface in a crucible, so that the gas flow of each Zn air outlet hole is difficult to keep consistent, and reactants Zn and H in a space can be caused2S(H2Se) ratio, which causes certain differences in the structure and performance of materials deposited at different positions, and poor uniformity, which can seriously affect the quality of products in actual production, especially in large-scale production.
Disclosure of Invention
The invention aims to provide a chemical vapor deposition furnace, which can obviously improve the uniformity of the proportion of raw materials in a deposition space and is easier to deposit to obtain a product with larger area and uniform thickness.
In order to solve the technical problem, the invention provides a chemical vapor deposition furnace, which comprises a furnace body, wherein a deposition chamber is arranged in the furnace body, the top of the deposition chamber is connected with a vacuum pipeline, the bottom of the deposition chamber is arranged on a crucible cover, a raw material crucible is arranged at the bottom of the crucible cover, and a gas leading-in device is also arranged on the surface of the crucible cover corresponding to the deposition chamber;
the gas leading-in device comprises a plurality of gas boxes arranged in parallel, a plurality of gas nozzles are arranged on the gas boxes, two adjacent gas boxes are respectively communicated with the raw material crucible and the mixed raw material gas inlet channel, the raw material crucible is further communicated with the carrier gas inlet channel, and a gas distribution plate is arranged in each gas box.
Furthermore, the surface of the crucible cover is provided with an accommodating cavity, the gas box is arranged in the accommodating cavity, and the mixed raw material gas inlet channel and the carrier gas inlet channel are both arranged on the crucible cover.
Further, be provided with three continuous step support in the gas tank, gas distribution board quantity is 2, and a plurality of air cocks set up on the roof, and two gas distribution board settings are located two step support of lower part in the gas tank on, the roof sets up on the step support at top.
Furthermore, the holes on the two gas distribution plates are arranged in a staggered manner, and the holes are not formed in the corresponding positions of the gas distribution plates corresponding to the mixed raw material gas inlet channel.
Further, the number of the gas boxes is 3, two of the gas boxes are communicated with the deposition chamber, and the other gas box is arranged in the middle and communicated with the mixed raw material gas inlet channel.
Further, the crucible cover is arranged on the skip car, a skip car track frame is arranged in the furnace body corresponding to the skip car, a lifting platform is arranged below the skip car, the raw material crucible is placed on the lifting platform, and the lifting platform is connected with the lifting mechanism.
Further, be provided with the step frame on the skip, the crucible lid sets up in the step frame, the skip bottom is provided with two rows of walking wheels, be provided with concave type spacing guided way on the skip track frame that the walking wheel corresponds, be provided with preceding locking piece and back locking piece on the concave type spacing guided way.
Further, elevating system includes lead screw lift and lift lifting plate lead screw lift installs on the lift supports the base, the lift supports the base setting on the skip, lead screw lift still is connected with lift lifting plate, be provided with the promotion jib on the lift lifting plate both ends, it passes the skip and is connected with lift platform to promote the jib, it is equipped with fixation nut to promote the jib to be located the cover on the part of skip top.
Furthermore, a crucible placing and positioning concave part is arranged on the lifting platform, a heating avoiding opening is arranged on the crucible placing and positioning concave part, and a support frame is arranged in the furnace body below the lifting platform.
Further, the furnace body is of a single-side door opening structure, an inner cavity of the furnace body is a cuboid, a water cooling device is arranged on the outer wall of the furnace body, a deposition chamber heating element and a heat insulation material are arranged on the inner wall of the furnace body, and a crucible heating element is arranged on the periphery of the raw material crucible.
The invention has the beneficial effects that:
the gas leading-in device can ensure that the raw material steam and the carrier gas evaporated in the raw material crucible enter the deposition chamber through a plurality of gas nozzles after being uniformly distributed, and can ensure the consistency of the gas flow and the concentration of the first raw material in each gas nozzle; the gas leading-in device can also make the second raw material gas and the diluent gas enter the deposition chamber through a plurality of gas nozzles after being uniformly distributed, the structure simplifies the gas inlet structure, avoids the arrangement of a flow meter and a pipeline of a plurality of paths of first raw material gas and diluent gas, ensures the consistency of the gas flow and the concentration in each gas nozzle, and makes the concentration distribution of the two raw material gases more uniform in a larger deposition space;
the gas distribution plate is arranged, so that impurities such as particles, oxide skin and the like entering the deposition chamber along with the raw material gas in the crucible can be effectively filtered, the comprehensive performance of the product prepared by deposition is greatly improved, and the product with larger area and thickness dimension and optical uniformity can be obtained by deposition more easily.
Drawings
FIG. 1 is a schematic overall structure of an embodiment of the present invention;
FIG. 2 is a schematic view of a deposition structure of the present invention;
FIG. 3 is a schematic view of a gas raw material supply structure of the present invention;
FIG. 4 is an exploded view of a portion of the structure of FIG. 3;
FIG. 5 is an exploded view of the gas introduction device of the present invention;
FIG. 6 is a schematic view of the bottom structure of the crucible cover of the present invention;
FIG. 7 is a schematic view of the overall structure in another embodiment of the present invention;
FIG. 8 is a schematic view of the skip of FIG. 7 in cooperation with a deposition structure;
fig. 9 is a schematic structural view of the skip part in fig. 7.
Detailed Description
The present invention is further described below in conjunction with the following figures and specific examples so that those skilled in the art may better understand the present invention and practice it, but the examples are not intended to limit the present invention.
Referring to fig. 1 to 6, an embodiment of a chemical vapor deposition furnace according to the present invention includes a furnace body 1, a deposition chamber 2 is disposed in the furnace body, the top of the deposition chamber is connected to a vacuum pipe 3, the bottom of the deposition chamber is disposed on a crucible cover 4, a raw material crucible 5 is disposed at the bottom of the crucible cover, and a gas introducing device 61 is further disposed on the surface of the crucible cover corresponding to the deposition chamber; the gas leading-in device can lead two raw material gases into the deposition chamber according to concentration uniform distribution in a larger deposition space, and is beneficial to the preparation of high-quality products.
The gas leading-in device comprises a plurality of gas boxes 6 arranged in parallel, a plurality of gas nozzles 7 are arranged on the gas boxes, two adjacent gas boxes are respectively communicated with a raw material crucible and a mixed raw material gas inlet channel 8, the raw material crucible is also communicated with a carrier gas inlet channel 9, wherein the two adjacent gas boxes are respectively a first raw material gas box and a second raw material gas box, the carrier gas inlet channel is used for introducing carrier gas into the raw material crucible, a first raw material is stored in the raw material crucible, the carrier gas sweeps over the first raw material and then is introduced into the first raw material gas box, and the second raw material gas is mixed with diluent gas and then is directly introduced into the second raw material gas box from the mixed raw material gas inlet channel; be provided with gas distribution plate 10 in the gas tank, gas distribution plate is with the inside a plurality of cavities of being cut apart into of gas tank, and after gaseous entering, gas distribution plate can be with gaseous evenly distributed, follow a plurality of air cocks discharge afterwards, and a plurality of air cocks combustion gas flow and concentration are unanimous.
The furnace body is of a single-side door structure, the inner cavity of the furnace body is a cuboid, the inner cavity of the cuboid furnace body is matched with the square deposition chamber, the space of the furnace body can be utilized to the maximum extent, the yield is improved, and the temperature uniformity of the large deposition chamber is more favorably realized; the outer wall of the furnace body is provided with a water cooling device, the inner wall of the furnace body is provided with a deposition chamber heating element 27 and a heat insulation material 28, the periphery of the raw material crucible is provided with a crucible heating element 29, the heat insulation material can be a carbon felt material or a refractory ceramic material, and the deposition chamber heating element and the crucible heating element can be graphite heaters.
When the crucible heating device is used, a first raw material in the raw material crucible is heated and evaporated through the crucible heating element to form a first raw material gas, the carrier gas is introduced into the raw material crucible and then carries the first raw material to enter the first raw material gas box, the first raw material gas box uniformly distributes the gas mixed by the first raw material gas and the carrier gas through the gas distribution plate, and the distributed gas is uniformly discharged from the plurality of gas nozzles; the second raw material and the diluent gas are mixed in the gas mixing tank and then directly introduced into the second raw material gas box, the first raw material gas box uniformly distributes the mixed gas of the second raw material gas and the diluent gas through a gas distribution plate, and the distributed gas is uniformly discharged from a plurality of gas nozzles; then the two raw materials are effectively deposited in the deposition chamber to obtain the product.
Specifically, above-mentioned crucible cover surface is provided with holding chamber 11, and the gas tank setting does not occupy the space of deposit room in the holding intracavity, and mixed raw materials gas inlet channel and carrier gas inlet channel all set up on the crucible cover, prepares through the mode of trompil, and simple structure does not have the pipeline to arrange, and the reliability is high. Be provided with three continuous step support portion 12 in the gas tank, gas distribution board quantity is 2, and a plurality of air cocks set up on roof 13, and two gas distribution board settings are located two step support portions of lower part in the gas tank, and the roof setting is on the step support portion at top, and two gas distribution boards are divided into three cavity with gas tank inside, discharge from the air cock after through twice evenly distributed promptly, effectively guarantee the homogeneity of distribution. Still with the hole dislocation set on two gas distribution boards, gaseous can directly not get into another cavity from a cavity, effectively improves the effect of homogeneous mixing, improves evenly distributed's ability to the hole is not seted up to the position that corresponds on the gas distribution board that mixed raw materials gas inlet channel corresponds, avoids gaseous direct entering second cavity in.
The quantity of foretell gas tank is injectd to 3, wherein two gas tanks are first raw materials gas tank, another is second raw materials gas tank, second raw materials gas tank sets up the centre at two first raw materials gas tanks, two first raw materials gas tank and deposit room through connection, second raw materials gas tank and mixed raw materials gas inlet channel through connection, because the deposit room is symmetrical, consequently, the structure that the aforesaid set up along second raw materials gas tank symmetry in the middle of having designed, the air cock that corresponds the second raw materials sets up on the central axis, both sides are the air cock that first raw materials corresponds respectively, the air cock side of two sets of first raw materials respectively has a deposit plate, thereby the uniformity of deposit plate about having guaranteed.
In one embodiment, as described with reference to fig. 7 to 9, the crucible cover is disposed on the skip 14, the skip track frame 15 is disposed in the furnace body corresponding to the skip, the lifting platform 16 is disposed below the skip, the raw material crucible is placed on the lifting platform, and the lifting platform is connected to the lifting mechanism 17. Utilize skip and skip track frame cooperation, can with crucible cover and deposit chamber in the outside impels the deposit stove, crucible cover and deposit chamber can assemble externally, the space is big, the simple operation can be with crucible cover and the whole dismantlement of accomplishing of drawing out of deposit chamber again after the deposit finishes, it is very convenient to use. The lifting mechanism can drive the lifting platform to move up and down, and after the skip car is conveyed in place, the lifting platform moves upwards to lift the raw material crucible and contact and seal the bottom of the crucible cover. This mode greatly reduced the degree of difficulty of current interior equipment of stove, the simple operation is reliable.
Specifically, be provided with the step frame on the skip, the crucible lid sets up in the step frame, and the skip bottom is provided with two rows of walking wheels 18, is provided with concave type spacing guided way 19 on the skip track frame that the walking wheel corresponds, is provided with preceding locking piece and back locking piece on the concave type spacing guided way, and the skip slides in concave type spacing guided way and moves, and it is smooth and easy to remove, and the reliability is high, can bear great weight, and through preceding locking piece and back locking piece locking back position fixed. Still combine elevating system and skip to it is fixed with the relative position of lift platform and skip, the position of raw materials crucible and crucible cover is confirmed promptly, guarantee the sealed accuracy of contact, above-mentioned elevating system includes screw lift 20 and lift lifting plate 21, screw lift installs on lift support base 22, lift support base sets up on the skip, screw lift still is connected with lift lifting plate, be provided with lifting boom 23 on the lift lifting plate both ends, lifting boom passes the skip and is connected with lift platform, lifting boom is located the cover and is equipped with fixation nut 24 on the part of skip top. A crucible placing and positioning concave part is arranged on the lifting platform, and the raw material crucible is placed in the crucible placing and positioning concave part to further determine the relative position; a heating avoiding opening 25 is arranged on the crucible placing and positioning concave part, so that the raw material crucible can be conveniently heated, and a support frame 26 is arranged in the furnace body below the lifting platform and used for placing the lifting platform.
Before deposition, a raw material crucible is placed on a lifting platform, the lifting platform is sent into a furnace body and placed on a support frame, then a crucible heating element is arranged, a crucible cover and a deposition chamber are assembled outside the furnace body and placed on a skip car, the skip car is pushed into the furnace body on a concave limiting guide rail, the skip car is limited and fixed after the deposition is in place, lifting mechanism accessories such as a lifting suspension rod, a lifting support base, a lifting plate and a lead screw lifter are installed from bottom to top, after the assembly is finished, the lead screw lifter acts to drive the lifting plate to move upwards, the lifting plate drives two lifting suspension rods to ascend, the lifting suspension rods lift the lifting platform, the raw material crucible is lifted, after the lifting plate is in contact with the crucible cover and sealed, fixing nuts on the lifting suspension rods on the skip car by the fixing nuts (for ensuring safety, a cushion block support can be filled in a gap between the lifting platform and the support frame after the lifting platform rises), and finally a screw rod lifter and related components which are not high in temperature resistance in the lifting mechanism are dismantled, and production can be carried out after the installation is finished; when the furnace is disassembled, the parts disassembled by the lifting mechanism are installed in place, then the fixing nuts (the cushion blocks are moved out) are loosened, the raw material crucible is descended until the lifting platform is contacted with the supporting frame, at the moment, the skip car can be moved out of the furnace body, the lifting mechanism can be disassembled firstly, so that the situation that the deposition chamber is blocked to enter and exit is avoided, the deposition chamber is moved out, and the furnace is disassembled is finished.
The raw material crucible, the lifting platform and the crucible heating element do not need to be dismantled and can be directly used in the next deposition. The crucible heating element described above may be arranged to bring the thermocouple into contact with the source crucible after the source crucible is in place.
In one embodiment, a thermocouple arranged on the periphery of the raw material crucible in a contact manner is also connected with a thermocouple lifting device, the thermocouple lifting device is arranged outside the furnace body, a lifting transmission component penetrating through the furnace body is arranged between the thermocouple lifting device and the thermocouple, the thermocouple lifting device can drive the thermocouple to vertically move up and down along the surface of the raw material crucible, the descending speed of a thermocouple temperature measuring point in the deposition process is ensured to be consistent with the descending speed of the raw material liquid level in the raw material crucible, the descending speed of the raw material liquid level is determined by calculating the relation between the evaporation capacity in unit time and the volume and density of raw material liquid changed into steam, the crucible heating element is controlled to synchronously move up and down after the descending speed is obtained through simulation calculation, and the temperature of the raw material liquid level is ensured to be kept unchanged at the set process temperature all the time.
Specifically, the liquid level descending speed is calculated by calculating the relationship between the evaporation capacity of the raw material liquid and the volume change and density of the liquid at a set temperature, and the descending of the thermocouple is controlled by a controller, a motor, a speed reducer and the like, so that the temperature measurement point of the thermocouple is consistent with the height of the liquid level, and the phenomenon of unstable evaporation capacity caused by the axial temperature gradient of the raw material crucible is greatly reduced.
In conclusion, the gas distributor and the thermocouple lifting device obviously improve the uniformity of the proportion of the raw materials in the deposition space, obviously improve the consistency of the evaporation capacity of the liquid of the raw materials during long-time deposition, and are easier to deposit to obtain optically uniform products with larger area and thickness.
The above embodiments are merely preferred embodiments for fully illustrating the present invention, and the scope of the present invention is not limited thereto. The equivalent substitution or change made by the technical personnel in the technical field on the basis of the invention is all within the protection scope of the invention. The protection scope of the invention is subject to the claims.
Claims (10)
1. The chemical vapor deposition furnace is characterized by comprising a furnace body, wherein a deposition chamber is arranged in the furnace body, the top of the deposition chamber is connected with a vacuum pipeline, the bottom of the deposition chamber is arranged on a crucible cover, a raw material crucible is arranged at the bottom of the crucible cover, and a gas leading-in device is also arranged on the surface of the crucible cover corresponding to the deposition chamber;
the gas leading-in device comprises a plurality of gas boxes arranged in parallel, a plurality of gas nozzles are arranged on the gas boxes, two adjacent gas boxes are respectively communicated with the raw material crucible and the mixed raw material gas inlet channel, the raw material crucible is further communicated with the carrier gas inlet channel, and a gas distribution plate is arranged in each gas box.
2. The chemical vapor deposition furnace according to claim 1, wherein a receiving chamber is provided on a surface of the crucible cover, the gas box is provided in the receiving chamber, and the mixed source gas inlet passage and the carrier gas inlet passage are provided on the crucible cover.
3. The chemical vapor deposition furnace according to claim 1, wherein three consecutive step holders are provided in the gas box, the number of the gas distribution plates is 2, the plurality of gas nozzles are provided on a ceiling plate, two gas distribution plates are provided in the lower two step holders in the gas box, and the ceiling plate is provided in the upper step holder.
4. The chemical vapor deposition furnace of claim 3, wherein the holes of the two gas distribution plates are offset, and the mixed feed gas inlet channel is not perforated at the corresponding position of the gas distribution plate.
5. The chemical vapor deposition furnace according to claim 1, wherein the number of the gas boxes is 3, and two of the gas boxes are connected to the deposition chamber, and the other gas box is disposed in the middle and connected to the mixed raw material gas inlet passage.
6. The chemical vapor deposition furnace according to claim 1, wherein the crucible cover is disposed on a skip, a skip rail frame is disposed in a furnace body corresponding to the skip, a lifting platform is disposed below the skip, the raw material crucible is placed on the lifting platform, and the lifting platform is connected to a lifting mechanism.
7. The chemical vapor deposition furnace according to claim 6, wherein the skip car is provided with a step frame, the crucible cover is arranged in the step frame, the bottom of the skip car is provided with two rows of travelling wheels, a concave limiting guide rail is arranged on a skip car track frame corresponding to the travelling wheels, and a front locking block and a rear locking block are arranged on the concave limiting guide rail.
8. The chemical vapor deposition furnace according to claim 6, wherein the lifting mechanism comprises a lead screw lifter and a lifting plate, the lead screw lifter is mounted on a lifting support base, the lifting support base is arranged on the skip car, the lead screw lifter is further connected with the lifting plate, lifting booms are arranged on two ends of the lifting plate, the lifting booms penetrate through the skip car and are connected with the lifting platform, and fixing nuts are sleeved on the parts of the lifting booms above the skip car.
9. The chemical vapor deposition furnace according to claim 6, wherein the lifting platform is provided with a crucible placing and positioning concave portion, the crucible placing and positioning concave portion is provided with a heating avoiding opening, and a supporting frame is arranged in the furnace body below the lifting platform.
10. The chemical vapor deposition furnace according to any one of claims 1 to 9, wherein the furnace body has a single-sided door structure and a rectangular inner cavity, a water cooling device is disposed on an outer wall of the furnace body, a deposition chamber heating element and a heat insulating material are disposed on an inner wall of the furnace body, and a crucible heating element is disposed on an outer periphery of the raw material crucible.
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| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202110892909.2A CN113512717A (en) | 2021-08-04 | 2021-08-04 | Chemical vapor deposition furnace |
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| CN202110892909.2A CN113512717A (en) | 2021-08-04 | 2021-08-04 | Chemical vapor deposition furnace |
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Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN114059043A (en) * | 2021-11-19 | 2022-02-18 | 新美光(苏州)半导体科技有限公司 | Air inlet mechanism and vapor deposition equipment |
| CN116815318A (en) * | 2023-06-07 | 2023-09-29 | 山西烁科晶体有限公司 | Device and method for preparing high-purity SiC polycrystalline rod |
-
2021
- 2021-08-04 CN CN202110892909.2A patent/CN113512717A/en active Pending
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN114059043A (en) * | 2021-11-19 | 2022-02-18 | 新美光(苏州)半导体科技有限公司 | Air inlet mechanism and vapor deposition equipment |
| CN114059043B (en) * | 2021-11-19 | 2023-10-03 | 新美光(苏州)半导体科技有限公司 | Air inlet mechanism and vapor deposition equipment |
| CN116815318A (en) * | 2023-06-07 | 2023-09-29 | 山西烁科晶体有限公司 | Device and method for preparing high-purity SiC polycrystalline rod |
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