CN218868224U - Spacer ring amplitude limiting low-noise amplifier assembly - Google Patents

Spacer ring amplitude limiting low-noise amplifier assembly Download PDF

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CN218868224U
CN218868224U CN202223526878.8U CN202223526878U CN218868224U CN 218868224 U CN218868224 U CN 218868224U CN 202223526878 U CN202223526878 U CN 202223526878U CN 218868224 U CN218868224 U CN 218868224U
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noise amplifier
transistor
stage
isolator
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袁杰
张建林
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Chengdu Tiger Microelectronics Research Institute Co ltd
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    • Y02D—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN INFORMATION AND COMMUNICATION TECHNOLOGIES [ICT], I.E. INFORMATION AND COMMUNICATION TECHNOLOGIES AIMING AT THE REDUCTION OF THEIR OWN ENERGY USE
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Abstract

The utility model relates to a spacer ring amplitude limiting low-noise amplifier component, which comprises a circulator, an isolator, an amplitude limiter, a low-noise amplifier and a reverse isolator; radio frequency signal inputs to circulator, the output of circulator is connected the input of isolator, the output of isolator is connected the input of amplitude limiter, low noise amplifier's input is connected to the output of amplitude limiter, and low noise amplifier's output is connected reverse isolator, reverse isolator output radio frequency signal. The utility model discloses transmission path and receiving channel duplex work among the mainly used system receiving and dispatching subassembly, transmission port to antenna port are transmission path, and antenna port to receiving port are receiving channel. The module has the main functions: the transmission of high power and low loss of the peak value 5000W of a transmitting channel is realized; the receiving channel has the large signal amplitude limiting protection and low noise amplification of the peak power of 4000W, and the transmitting channel and the receiving channel have high isolation.

Description

Spacer ring amplitude limiting low-noise amplifier assembly
Technical Field
The utility model relates to a radio frequency electronics technical field especially relates to a subassembly is put to spacer ring limit of amplitude limiting end noise.
Background
With the development of communication technology, the power of a power module is larger and larger, the power requirement of a circulator shared by transceiving is higher and higher, and the transmitting power bearing capacity of the circulator is stronger, so that the transmitting and receiving components of corresponding signals play more and more important roles in the communication field, in particular, how to provide a flexible and reliable high-frequency receiving component in the high-frequency receiving field, such as an X-band product, is a problem to be considered at the present stage.
SUMMERY OF THE UTILITY MODEL
An object of the utility model is to overcome prior art's shortcoming, provide a subassembly is put to spacer ring amplitude limit low noise, can supply nimble reliable high frequency to receive the subassembly, have important meaning to the receiving and dispatching work of signal.
The purpose of the utility model is realized through the following technical scheme: the spacer ring amplitude limiting low-noise amplifier component comprises a circulator, an isolator, an amplitude limiter, a low-noise amplifier and a reverse isolator; radio frequency signal inputs to circulator, the output of circulator is connected the input of isolator, the output of isolator is connected the input of amplitude limiter, low noise amplifier's input is connected to the output of amplitude limiter, and low noise amplifier's output is connected reverse isolator, reverse isolator output radio frequency signal.
The amplitude limiter comprises 5 PIN diodes which are cascaded, the anodes of the 5 PIN diodes are connected in parallel, and the cathodes of the 5 PIN diodes are grounded; a capacitor is connected in series between the first-stage PIN diode D1 and the second-stage PIN diode D2, an inductor is connected in parallel, one end of the inductor is connected between the first-stage PIN diode D1 and the second-stage PIN diode D2, the other end of the inductor is connected with a capacitor and then grounded, the other end of the inductor is also connected with the cathode of a PIN diode, and the anode of the PIN diode is grounded.
The low-noise amplifier comprises a self-bias negative feedback circuit, a noise matching circuit, a power matching circuit and a power supply circuit; the noise matching circuit is connected with the input end of the self-bias negative feedback circuit, the power matching circuit is connected with the output end of the self-bias negative feedback circuit, and the power supply circuit is respectively connected with the input end of the noise matching circuit and the output end of the power matching circuit.
The self-bias negative feedback circuit comprises a first-stage circuit and a second-stage circuit, wherein the first-stage circuit is a self-bias circuit, and the second-stage circuit is a voltage-dividing bias circuit; the output end of the noise matching circuit is connected with the input end of the self-biasing circuit, the biasing circuit is connected with the voltage-dividing biasing circuit in parallel, and the output end of the voltage-dividing biasing circuit is connected with the input end of the power matching circuit.
The self-bias circuit comprises a transistor M 1 Resistance R 1 Resistance R F And a resistance R L1 Forming; the output end of the noise matching circuit and the transistor M 1 Base connection of transistor M 1 The emitter of (2) is grounded; the resistor R 1 And a resistance R F Series connection, resistance R after series connection F And transistor M 1 Is connected to the collector of, and resistor R 1 Grounding; the resistor R L1 And said transistor M 1 The other end of the voltage-dividing bias circuit is connected with the voltage-dividing bias circuit.
The voltage-dividing bias circuit comprises a transistor M 2 Resistance R E Capacitor C E And a resistance R L2 Forming; the transistor M 2 And said transistor M 1 The collector of the resistor R E And a capacitor C E In parallel connection, one end of the transistor M is connected in parallel 2 The emitter of the LED is connected, and the other end of the LED is grounded; the resistor R L2 And said transistor M 2 Is connected with the collector of the resistor R, and the other end of the resistor R is connected with the collector of the resistor R L1 Connecting; the transistor M 2 Is connected to the input of the power matching circuit.
The self-bias negative feedback circuit also comprises an inductive load inductor L 1 The inductive load inductance L 1 And the resistance R L2 And the connection is used for offsetting the influence of the parasitic capacitance on the impedance, thereby improving the matching of the circuit.
The utility model has the advantages of it is following: the spacer ring amplitude limiting low-noise amplifier component is mainly used for duplex work of a transmitting channel and a receiving channel in a system transceiving component, wherein the transmitting channel is from a transmitting port to an antenna port, and the receiving channel is from the antenna port to the receiving port. The module has the main functions: the transmission of high power and low loss of the peak value 5000W of a transmitting channel is realized; the receiving channel has the large signal amplitude limiting protection and low noise amplification of the peak power of 4000W, and the transmitting channel and the receiving channel have high isolation.
Drawings
Fig. 1 is a schematic structural view of the present invention;
fig. 2 is a limiter circuit diagram;
FIG. 3 is a circuit of a low noise amplifier;
fig. 4 is a self-biased negative feedback circuit diagram.
Detailed Description
In order to make the objects, technical solutions and advantages of the embodiments of the present application clearer, the technical solutions in the embodiments of the present application will be clearly and completely described below with reference to the drawings in the embodiments of the present application, and it is obvious that the described embodiments are only a part of the embodiments of the present application, and not all the embodiments. The components of the embodiments of the present application, generally described and illustrated in the figures herein, can be arranged and designed in a wide variety of different configurations. Thus, the detailed description of the embodiments of the present application provided below in connection with the appended drawings is not intended to limit the scope of the claimed application, but is merely representative of selected embodiments of the application. All other embodiments, which can be derived by a person skilled in the art from the embodiments of the present application without making any creative effort, shall fall within the protection scope of the present application. The invention is further described below with reference to the accompanying drawings.
As shown in fig. 1, the utility model relates to a spacer ring amplitude limiting low noise amplifier assembly, which comprises a circulator, an isolator, an amplitude limiter, a low noise amplifier and a reverse isolator; radio frequency signal inputs to circulator, the output of circulator is connected the input of isolator, the output of isolator is connected the input of amplitude limiter, low noise amplifier's input is connected to the output of amplitude limiter, and low noise amplifier's output is connected reverse isolator, reverse isolator output radio frequency signal. The high-power low-loss transmission of a transmitting channel is mainly realized; the receiving channel has large signal amplitude limiting protection and low noise amplification, and the transmitting channel and the receiving channel have high isolation.
Further, the circulator adopts a low-field circulator, the working magnetic field of the circulator is far lower than the resonance field, although the external magnetic field is strong, so that the material works in a saturation state, the internal field is close to zero due to the action of a demagnetizing field, and therefore sigma =0 can be designed, and the normalized magnetic distance P = k/u. The low field is selected in the microwave high-frequency band (above S wave band), so that the index and the volume are smaller and more advantageous.
The circulator is mainly formed by placing a central conductor between two ferrite rotating magnetic sheets to form a sample junction. Two layers of polytetrafluoroethylene medium films are sleeved outside the sample knot respectively, and are positioned and fixed in the cavity rotating magnetic hole. The permanent magnet is placed above the sample junction and provides a dc bias field. In order to reduce magnetic leakage and power leakage, 1 metal magnetic circuit board is respectively arranged at the upper part and the lower part of the cavity body to shield electromagnetic signal leakage. Has the characteristics of light and small appearance, convenient installation, easy processing and the like.
Further, the isolator still adopts the design idea of a low-field junction type distributed parameter circulator. The only difference from circulators is: in order to effectively reduce the power bearing capacity of the first stage of the amplitude limiter, the larger the insertion loss under power is, the better the insertion loss is when the isolator bears peak power, and the gyromagnetic sheet can only adopt a conventional design method to increase the insertion loss.
The structure is the same as the design of a circulator, and the central conductor is arranged between two ferrite rotating magnetic sheets to form a sample junction. Two pieces of polytetrafluoroethylene medium films are respectively sleeved outside the sample knot and positioned and fixed in the cavity rotating magnetic hole. The permanent magnet is placed above the sample junction and provides a dc bias field. In order to reduce magnetic leakage and power leakage, 1 metal magnetic circuit board is respectively arranged at the upper part and the lower part of the cavity body to shield electromagnetic signal leakage.
As shown in fig. 2, the limiter mainly protects the post-stage small signal from being burned out, so that the module can bear the peak power of 4000W, and comprises 5 PIN diodes which are cascaded, wherein the anodes of the 5 diodes are connected in parallel, and the cathodes of the 5 diodes are grounded; a capacitor is connected in series between the first-stage PIN diode D1 and the second-stage PIN diode D2, an inductor is connected in parallel, one end of the inductor is connected between the first-stage PIN diode D1 and the second-stage PIN diode D2, the other end of the inductor is connected with a capacitor and then grounded, the other end of the inductor is also connected with the cathode of a PIN diode, and the anode of the PIN diode is grounded.
The first-stage diode is a PIN switch diode, the model number of the first-stage diode is GP1000C0700, the first-stage diode needs to bear larger incident waves and reflected waves, the tube core of the amplitude limiter cannot meet the requirements, and a diode with the thickness of an I layer is required to be selected, so that the PIN diode with the thickness of the I layer being 90 microns is selected, the thermal resistance is less than 8 ℃/W, the borne peak power can reach 8000W, a coupling detection circuit is added at the input end of the PIN diode, the detection voltage is fed back to the first-stage diode, the turn-off speed of the amplitude limiter under power can be accelerated, the turn-on time of the diode is reduced, and the time of the later-stage amplitude limiter bearing the leakage power is reduced;
the second-stage diode is a PIN switch diode, the model number of the second-stage diode is GP250C0500, and the second-stage diode mainly bears the instantaneous power when the first stage is not switched off and the leakage power after the first stage is switched off; the turn-off time of the first-stage diode is less than or equal to 500ns, the peak value of the leakage power after turn-off is less than or equal to 56dBm, the second-stage diode needs to be higher in conduction speed and bear the diode with higher peak power, the thickness of an I layer of the diode is 20 mu m, and the thermal resistance is less than 25 ℃/W.
The third-stage diode is a PIN amplitude limiting diode, the model number of the third-stage diode is GLY4607, and the third-stage diode mainly bears the instantaneous power when the second stage is not turned off and the leakage power after the second stage is turned off; the turn-off time of the second-stage diode is less than or equal to 100ns, the peak value of the leakage power after turn-off is less than or equal to 46dBm, the third-stage diode needs to be faster than the second-stage diode and bear the diode with higher peak power, and the thickness of the I layer of the diode is 5um.
The fourth-stage diode is a PIN amplitude limiting diode, the model of which is GLY4601 and mainly bears the instantaneous power when the third stage is not switched off and the leakage power after the third stage is switched off; the turn-off time of the third-stage diode is less than or equal to 50ns, the peak value of the leakage power after turn-off is less than or equal to 33dBm, the turn-on speed of the fourth-stage diode is higher than that of the third-stage diode and bears the diode with higher peak power, the thickness of the I layer of the diode is 2 mu m, and the thermal resistance is less than 30 ℃/W.
The fifth-stage diode is a detection diode, the type number of the detection diode is 2H155, and the detection diode mainly bears the instantaneous power when the fourth stage is not turned off and the leakage power after the fourth stage is turned off; the turn-off time of the fourth-stage diode is less than or equal to 5ns, the peak value of the leakage power after turn-off is less than or equal to 20dBm, the turn-on speed of the fifth-stage diode is higher than that of the fourth stage, the thickness of the I layer of the diode is less than 2 mu m, and the response speed is less than 2ns.
As shown in fig. 3, the low noise amplifier includes a noise matching circuit, a power matching circuit, a self-biased negative feedback circuit, and a power supply circuit; the noise matching circuit is connected with the input end of the negative feedback circuit, and the power matching circuit is connected with the output end of the negative feedback circuit.
Specifically, the capacitor C2, the resistor R1 and the inductor L1 constitute input noise matching, and 50 ohms are matched to the gate impedance of the first stage transistor FET 1; the output power matching formed by the inductor L2 and the capacitors C4 and C5 matches the drain impedance of the second-stage transistor FET2 to 50 ohms; the resistors R0, R2 and R3, the capacitor C3 and the second-stage transistor FET2 form a self-biasing feedback circuit to play a stabilizing role; and the inductor L3, the capacitor C4 and the resistor R4 are connected with a power supply input to form a power supply circuit.
As shown in fig. 4, the self-biased negative feedback circuit includes a first stage circuit and a second stage circuit, the first stage circuit is a self-biasing circuit, and the second stage circuit is a voltage-dividing biasing circuit; the output end of the noise matching circuit is connected with the input end of the self-biasing circuit, the biasing circuit is connected with the voltage-dividing biasing circuit in parallel, and the output end of the voltage-dividing biasing circuit is connected with the input end of the power matching circuit.
The self-bias circuit comprises a transistor M 1 And a resistor R 1 Resistance R F And a resistance R L1 Forming; the output end of the noise matching circuit and the transistor M 1 Base connection of transistor M 1 The emitter of (2) is grounded; the resistance R 1 And a resistance R F Series connection, resistance R after series connection F And transistor M 1 Is connected to the collector of, and resistor R 1 Grounding; the resistor R L1 And said transistor M 1 The other end of the collector is connected with the voltage-dividing bias circuit.
The voltage-dividing bias circuit comprises a transistor M 2 Resistance R E Capacitor C E And a resistance R L2 Forming; the transistor M 2 And said transistor M 1 The collector of the resistor R E And a capacitor C E Connected in parallel, one end of which is connected with the transistor M in parallel 2 The other end of the emitter is grounded; the resistor R L2 And said transistor M 2 Is connected with the collector of the resistor R, and the other end of the resistor R is connected with the resistor R L1 Connecting; the transistor M 2 Is connected to the input of the power matching circuit.
Wherein the transistor M 1 The source-drain voltage is:
V DS1 ＝V DD -I DS1 R L1 (1)
transistor M 1 The gate voltage of (a) is:
Figure BDA0004023284860000051
transistor M 2 The gate voltage of (d) is:
V GS2 ＝V DS1 ＝V DD -I DS1 R L1 (3)
transistor M 2 The source-drain voltage is:
V DS2 ＝V DD -I DS2 (R L2 +R E ) (4)
as can be seen from the formulas (1), (2), (3) and (4), the resistance R can be adjusted F Resistance R L1 And a resistance R 1 Can make the transistor M 1 Working in a required working state. Similarly, the operating state of the transistor M2 is also determined by the resistor R 1 、R F 、R L1 、R E 、R L2 And (6) determining.
To increase the low frequency input impedance of the circuit, the resistance R is increased appropriately 1 And R F And appropriately adjusting the resistance R L1 Thereby changing the impedance of the self-biased negative feedback circuit; in order to reduce the influence of frequency on impedance, inductive negative is added into self-bias negative feedback circuitLoad inductance L 1 The inductance L 1 The influence of the parasitic capacitance on the impedance can be counteracted to a certain extent, and therefore the matching of the circuit is improved.
Furthermore, the reverse isolator is a microstrip isolator, and is mainly used for isolating power coupled from the receiving port and protecting the low-noise amplifier. The method is realized by a power resistor of a micro-strip circulator and a film resistor, and is a conventional prior art.
The working process of the utility model is as follows: the low-noise amplifier consists of a circulator, an isolator, an amplitude limiter, a low-noise amplifier and a reverse microstrip isolator, and realizes the functions of transmitting and receiving shunt circuits, amplitude limiting and amplification and preventing power from entering from an output port and burning the low-noise amplifier.
The foregoing is illustrative of the preferred embodiments of the present invention, and it is to be understood that the invention is not limited to the precise forms disclosed herein and that the invention is not to be considered as limited to the disclosed embodiments, but is capable of use in various other combinations, modifications, and environments and is capable of changes within the scope of the inventive concept as expressed herein, commensurate with the above teachings, or the skill or knowledge of the relevant art. But that modifications and variations may be effected by those skilled in the art without departing from the spirit and scope of the invention, which is to be limited only by the claims appended hereto.

Claims (7)

1. Subassembly is put to spacer ring amplitude limit low noise, its characterized in that: the device comprises a circulator, an isolator, a limiter, a low noise amplifier and a reverse isolator; radio frequency signal inputs to circulator, the output of circulator is connected the input of isolator, the output of isolator is connected the input of amplitude limiter, low noise amplifier's input is connected to the output of amplitude limiter, and low noise amplifier's output is connected reverse isolator, reverse isolator output radio frequency signal.
2. The grommet clipping low noise amplifier assembly as defined in claim 1, wherein: the amplitude limiter comprises 5 PIN diodes which are cascaded, the anodes of the 5 PIN diodes are mutually connected in parallel, and the cathodes of the 5 PIN diodes are grounded; a capacitor is connected in series between the first-stage PIN diode D1 and the second-stage PIN diode D2, an inductor is connected in parallel, one end of the inductor is connected between the first-stage PIN diode D1 and the second-stage PIN diode D2, the other end of the inductor is connected with a capacitor and then grounded, the other end of the inductor is also connected with the cathode of a PIN diode, and the anode of the PIN diode is grounded.
3. The grommet-clipped low noise amplifier assembly according to claim 1, wherein: the low-noise amplifier comprises a self-bias negative feedback circuit, a noise matching circuit, a power matching circuit and a power supply circuit; the noise matching circuit is connected with the input end of the self-bias negative feedback circuit, the power matching circuit is connected with the output end of the self-bias negative feedback circuit, and the power supply circuit is respectively connected with the input end of the noise matching circuit and the output end of the power matching circuit.
4. The spacer ring amplitude limiting low noise amplifier assembly of claim 3, wherein: the self-bias negative feedback circuit comprises a first-stage circuit and a second-stage circuit, wherein the first-stage circuit is a self-bias circuit, and the second-stage circuit is a voltage-dividing bias circuit; the output end of the noise matching circuit is connected with the input end of the self-biasing circuit, the biasing circuit is connected with the voltage-dividing biasing circuit in parallel, and the output end of the voltage-dividing biasing circuit is connected with the input end of the power matching circuit.
5. The grommet-clipped low noise amplifier assembly as defined in claim 4, wherein: the self-bias circuit comprises a transistor M 1 And a resistor R 1 Resistance R F And a resistance R L1 Forming; the output end of the noise matching circuit and the transistor M 1 Base connection of transistor M 1 The emitter of (2) is grounded; the resistor R 1 And a resistance R F Series connection, resistance R after series connection F And transistor M 1 Is connected to the collector of, and resistor R 1 Grounding; the resistance R L1 And said transistor M 1 Collector electrode ofAnd the other end of the voltage division type bias circuit is connected with the voltage division type bias circuit.
6. The spacer ring amplitude limiting low noise amplifier assembly of claim 5, wherein: the voltage-dividing bias circuit comprises a transistor M 2 Resistance R E Capacitor C E And a resistance R L2 Forming; the transistor M 2 And said transistor M 1 The collector of the resistor R E And a capacitor C E In parallel connection, one end of the transistor M is connected in parallel 2 The emitter of the LED is connected, and the other end of the LED is grounded; the resistor R L2 And said transistor M 2 Is connected with the collector of the resistor R, and the other end of the resistor R is connected with the resistor R L1 Connecting; the transistor M 2 Is connected to the input of the power matching circuit.
7. The spacer ring amplitude limiting low noise amplifier assembly of claim 6, wherein: the self-biased negative feedback power supply further comprises an inductive load inductor L 1 The inductive load inductance L 1 And the resistance R L2 And the connection is used for offsetting the influence of the parasitic capacitance on the impedance, thereby improving the matching of the circuit.
CN202223526878.8U 2022-12-28 2022-12-28 Spacer ring amplitude limiting low-noise amplifier assembly Active CN218868224U (en)

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