CN218860952U - Annular oxygen reduction tool and system for single crystal furnace - Google Patents

Annular oxygen reduction tool and system for single crystal furnace Download PDF

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Publication number
CN218860952U
CN218860952U CN202223493656.0U CN202223493656U CN218860952U CN 218860952 U CN218860952 U CN 218860952U CN 202223493656 U CN202223493656 U CN 202223493656U CN 218860952 U CN218860952 U CN 218860952U
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single crystal
crystal furnace
annular
arc
oxygen reduction
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杨春祥
石鑫
董宇豪
何阳
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Leshan Jingyuntong New Material Technology Co ltd
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Leshan Jingyuntong New Material Technology Co ltd
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    • YGENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02PCLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
    • Y02P70/00Climate change mitigation technologies in the production process for final industrial or consumer products
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Abstract

The utility model relates to the technical field of single crystal furnaces, and discloses an annular oxygen reduction tool and a system for a single crystal furnace, wherein the annular oxygen reduction tool for the single crystal furnace comprises a plurality of arc-shaped heat-resisting devices, the arc-shaped heat-resisting devices are arranged below an annular heater in the single crystal furnace, and the arc-shaped heat-resisting devices are arranged between two adjacent foot plates on the annular heater; annular oxygen reduction system for single crystal growing furnace, including single crystal growing furnace and above-mentioned annular oxygen reduction frock for single crystal growing furnace. The utility model can solve the problem of high oxygen in the single crystal furnace and improve the quality of the generated single crystal silicon.

Description

Annular oxygen reduction tool and system for single crystal furnace
Technical Field
The utility model relates to a single crystal growing furnace technical field, concretely relates to annular oxygen reduction frock and system for single crystal growing furnace.
Background
High-quality monocrystalline silicon pieces are the core competitiveness of monocrystalline silicon manufacturing enterprises, in order to further improve the quality of the monocrystalline silicon pieces, a large-size thermal field is generated, but the large-size thermal field brings about the problem of high oxygen in a monocrystalline furnace, the high oxygen in the monocrystalline furnace not only can cause the increase of the inverse cutting proportion of a crystal bar to cause the increase of crystal pulling cost, but also can cause the occurrence of black cores and concentric circles in a silicon piece battery to reduce the efficiency and half life period of the battery piece, and the problem of the high oxygen in the monocrystalline furnace is mainly caused by the low temperature difference between the upper part and the lower part in the monocrystalline furnace, so a device for increasing the temperature difference between the upper part and the lower part in the monocrystalline furnace is needed.
SUMMERY OF THE UTILITY MODEL
An object of the utility model is to provide an annular oxygen reduction frock and system for single crystal growing furnace for increase the difference in temperature about in the single crystal growing furnace in order to solve the hyperoxia problem in the single crystal growing furnace, and then improve the quality of the monocrystalline silicon of single crystal growing furnace production.
In order to solve the technical problem, the utility model discloses a following scheme:
on one hand, the annular oxygen reduction tool for the single crystal furnace comprises a plurality of arc-shaped heat resisting devices, wherein the arc-shaped heat resisting devices are installed below an annular heater in the single crystal furnace, and the arc-shaped heat resisting devices are installed between two adjacent foot plates on the annular heater.
Furthermore, the arc-shaped heat resistance device comprises a bottom plate arranged on the bottom surface of the single crystal furnace, one end of one or a plurality of support columns is/are detachably arranged on the bottom plate, and the heat resistance plate is detachably arranged at the other end of each support column.
Furthermore, a gap is arranged between the arc-shaped heat resisting device and a foot plate of the annular heater.
Furthermore, the bottom plate and the heat-resistant plate are both of arc structures, the diameter of the bottom plate is consistent with that of the bottom surface of the single crystal furnace, and the diameter of the heat-resistant plate is consistent with that of the bottom of the annular heater.
Further, the heat-resistant plate is made of graphite.
On the other hand, the annular oxygen reduction system for the single crystal furnace comprises the single crystal furnace and the annular oxygen reduction tool for the single crystal furnace in the scheme, wherein the single crystal furnace comprises an annular heater, a plurality of foot plates are arranged on the annular heater, an arc-shaped heat resisting device in the annular oxygen reduction tool for the single crystal furnace is arranged below the annular heater, and the arc-shaped heat resisting device in the annular oxygen reduction tool for the single crystal furnace is arranged between two adjacent foot plates on the annular heater.
The utility model discloses beneficial effect who has:
1. the utility model discloses in, through being provided with a plurality of arc between two adjacent sole at annular heater's below, annular heater and hinder hot device, block the heat downward diffusion that annular heater produced, and then reach the purpose that increases the temperature difference about the single crystal growing furnace, solved the hyperoxia problem in the single crystal growing furnace, and then improved the quality of the monocrystalline silicon of single crystal growing furnace production.
2. Through setting the arc heat resistance device into a detachable structure, the arc heat resistance device is convenient to maintain and replace the heat resistance plate, the support column and the bottom plate in the arc heat resistance device.
3. Through setting up the bottom plate of the circular structure unanimous with single crystal furnace bottom surface diameter and the heat blocking board of the circular structure unanimous with ring heater bottom diameter to connect the two through a plurality of support column, make the arc that comprises above-mentioned three hinder the heat facility and can laminate with the inside lateral wall of single crystal growing furnace, be difficult for taking place the skew.
4. The gap is arranged between the arc heat resisting device and the foot plate of the annular heater, so that the phenomenon that the annular heater is short-circuited due to the contact of the arc heat resisting device and the annular heater and devices in the single crystal furnace are burnt is avoided.
Drawings
FIG. 1 is a schematic view of the overall structure of the arc-shaped heat-resisting device of the present invention;
FIG. 2 is a sectional view of the annular oxygen reduction system for the medium single crystal furnace of the present invention.
Reference numerals: 1-arc heat-resistant device, 2-single crystal furnace, 3-annular heater, 4-foot plate, 101-heat-resistant plate, 102-bottom plate and 103-support column.
Detailed Description
The present invention will be described in further detail with reference to the following examples and drawings, but the present invention is not limited thereto.
In the description of the present invention, it should be noted that the terms "center", "upper", "lower", "left", "right", "vertical", "longitudinal", "lateral", "horizontal", "inner", "outer", "front", "rear", "top", "bottom", and the like indicate the position or positional relationship based on the position or positional relationship shown in the drawings, or the position or positional relationship which is usually placed when the product of the present invention is used, and the terms are only for convenience of description of the present invention and simplifying the description, but do not indicate or imply that the device or element to which the term refers must have a specific orientation, be constructed and operated in a specific orientation, and thus should not be construed as limiting the present invention.
In the description of the present invention, it should be further noted that, unless otherwise explicitly specified or limited, the terms "disposed," "opened," "mounted," "connected," and "connected" are to be construed broadly, e.g., as either a fixed connection, a detachable connection, or an integral connection; can be mechanically or electrically connected; they may be connected directly or indirectly through intervening media, or they may be interconnected between two elements. The specific meaning of the above terms in the present invention can be understood as a specific case by those skilled in the art.
Example 1:
as shown in fig. 1, the annular oxygen reduction tool for the single crystal furnace comprises a plurality of arc-shaped heat resistance devices 1, wherein the arc-shaped heat resistance devices 1 are installed below an annular heater 3 in the single crystal furnace 2, the arc-shaped heat resistance devices 1 are installed between two adjacent foot plates 4 on the annular heater 3, for example, two foot plates 4 are arranged on the annular heater 3, and 2 arc-shaped heat resistance devices 1 are arranged.
Specifically, the arc-shaped heat resistance device 1 comprises a bottom plate 102 installed on the bottom surface of the single crystal furnace 2, one end of one or more support columns 103 is/are detachably installed on the bottom plate 102, and a heat resistance plate 101 is detachably installed at the other end of each support column 103.
Specifically, a gap is arranged between the arc-shaped heat resisting device 1 and the foot plate 4 of the annular heater 3.
Specifically, the bottom plate 102 and the heat-resistant plate 101 are both in an arc structure, the diameter of the bottom plate 102 is consistent with that of the bottom surface of the single crystal furnace 2, and the diameter of the heat-resistant plate 101 is consistent with that of the bottom of the ring heater 3.
Specifically, the material of the heat-resistant plate 101 is graphite.
The working principle of the embodiment is as follows:
the arc-shaped heat resistance device 1 is arranged between two adjacent foot plates 4 on the annular heater 3, the bottom plate 102 of the arc-shaped heat resistance device 1 is arranged on the bottom surface of the single crystal furnace 2, at the moment, the heat resistance plate 101 of the arc-shaped heat resistance device 1 is positioned under the annular heater 3, the diameter of the bottom plate 102 is consistent with that of the bottom surface of the single crystal furnace 2, and the diameter of the heat resistance plate 101 is consistent with that of the bottom of the annular heater 3, so the bottom plate 102 and the heat resistance plate 101 can be attached to the side wall of the single crystal furnace 2, the heat resistance plate 101 is made of graphite, a heat resistance effect is achieved, geothermal energy generated by the annular heater 3 can be intercepted by the heat resistance plate 101, heat diffused to the lower side of the heat resistance plate 101 is reduced, a temperature difference between the upper side and the lower side of the heat resistance plate 101 is manufactured, the problem of high oxygen in the single crystal furnace 2 is solved, and the quality of monocrystalline silicon produced by the single crystal furnace 2 is guaranteed.
Example 2:
as shown in fig. 2, the annular oxygen reduction system for the single crystal furnace comprises a single crystal furnace 2 and the annular oxygen reduction tool for the single crystal furnace, wherein the single crystal furnace 2 comprises an annular heater 3, a plurality of foot plates 4 are arranged on the annular heater 3, an arc-shaped heat blocking device 1 in the annular oxygen reduction tool for the single crystal furnace is arranged below the annular heater 3, the arc-shaped heat blocking device 1 in the annular oxygen reduction tool for the single crystal furnace is arranged between two adjacent foot plates 4 on the annular heater 3, for example, 2 foot plates 4 are arranged on the annular heater 3.
The working principle of the embodiment is as follows:
when the single crystal furnace 2 works, the annular heater 3 can generate heat, and if the heat generated by the annular heater 3 is not controlled, the heat generated by the annular heater 3 can be uniformly distributed in the single crystal furnace 2, so that the temperature difference in the single crystal furnace 2 is low, the problem of high oxygen in the single crystal furnace 2 is easy to occur, and the quality of the single crystal silicon produced by the single crystal furnace 2 is poor.
The annular oxygen reduction tool for the single crystal furnace is arranged below the annular heater 3 and between two adjacent foot plates 4 of the annular heater 3, when the annular heater 3 works to generate heat, the heat resistance plate 101 in the arc-shaped heat resistance device 1 of the annular oxygen reduction tool for the single crystal furnace can block the heat generated by the annular heater 3, so that the heat generated by the annular heater 3 can not be completely diffused to the lower part of the heat resistance plate 101, and further the temperature difference between the upper part and the lower part of the heat resistance plate 101 in the single crystal furnace 2 is manufactured, because the high oxygen problem in the single crystal furnace 2 is caused by the low temperature difference in the single crystal furnace 2, the temperature difference in the single crystal furnace 2 manufactured by the heat resistance plate 101 can solve the high oxygen problem in the single crystal furnace 2, the quality of the monocrystalline silicon produced by the single crystal furnace 2 is improved, and the problems of low cell efficiency and half-life due to the rise of crystal pulling cost and the occurrence of black centers and concentric circles of silicon cells caused by the high oxygen in the single crystal furnace 2 are solved.
The above description is only a preferred embodiment of the present invention, and is not intended to limit the present invention in any way, and the technical essence of the present invention is that within the spirit and principle of the present invention, any simple modification, equivalent replacement, and improvement made to the above embodiments are all within the protection scope of the technical solution of the present invention.

Claims (6)

1. The annular oxygen reduction tool for the single crystal furnace is characterized by comprising a plurality of arc-shaped heat resisting devices (1), wherein the arc-shaped heat resisting devices (1) are arranged below an annular heater (3) in the single crystal furnace (2), and the arc-shaped heat resisting devices (1) are arranged between two adjacent foot plates (4) on the annular heater (3).
2. The annular oxygen reduction tool for the single crystal furnace according to claim 1, wherein the arc-shaped heat resistance device (1) comprises a bottom plate (102) installed on the bottom surface of the single crystal furnace (2), one end of one or more supporting columns (103) is/are detachably installed on the bottom plate (102), and a heat resistance plate (101) is/are detachably installed at the other end of each supporting column (103).
3. The annular oxygen reduction tool for the single crystal furnace according to claim 1, wherein a gap is formed between the arc-shaped heat resisting device (1) and the foot plate (4) of the annular heater (3).
4. The annular oxygen reduction tool for the single crystal furnace according to claim 2, wherein the bottom plate (102) and the heat-resistant plate (101) are both in an arc structure, the diameter of the bottom plate (102) is consistent with that of the bottom surface of the single crystal furnace (2), and the diameter of the heat-resistant plate (101) is consistent with that of the bottom of the annular heater (3).
5. The annular oxygen reduction tool for the single crystal furnace is characterized in that the heat-resistant plate (101) is made of graphite.
6. An annular oxygen reduction system for a single crystal furnace is characterized by comprising the single crystal furnace (2) and the annular oxygen reduction tool for the single crystal furnace according to any one of claims 1 to 5, wherein the single crystal furnace (2) comprises an annular heater (3), a plurality of foot plates (4) are arranged on the annular heater (3), an arc-shaped heat resistance device (1) in the annular oxygen reduction tool for the single crystal furnace is arranged below the annular heater (3), and the arc-shaped heat resistance device (1) in the annular oxygen reduction tool for the single crystal furnace is arranged between two adjacent foot plates (4) on the annular heater (3).
CN202223493656.0U 2022-12-27 2022-12-27 Annular oxygen reduction tool and system for single crystal furnace Active CN218860952U (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
CN202223493656.0U CN218860952U (en) 2022-12-27 2022-12-27 Annular oxygen reduction tool and system for single crystal furnace

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
CN202223493656.0U CN218860952U (en) 2022-12-27 2022-12-27 Annular oxygen reduction tool and system for single crystal furnace

Publications (1)

Publication Number Publication Date
CN218860952U true CN218860952U (en) 2023-04-14

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Family Applications (1)

Application Number Title Priority Date Filing Date
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Country Status (1)

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CN (1) CN218860952U (en)

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