CN216738632U - Spliced combined crucible pot for single crystal furnace - Google Patents
Spliced combined crucible pot for single crystal furnace Download PDFInfo
- Publication number
- CN216738632U CN216738632U CN202122999407.8U CN202122999407U CN216738632U CN 216738632 U CN216738632 U CN 216738632U CN 202122999407 U CN202122999407 U CN 202122999407U CN 216738632 U CN216738632 U CN 216738632U
- Authority
- CN
- China
- Prior art keywords
- layer part
- outer layer
- single crystal
- inner layer
- crucible
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Active
Links
Images
Landscapes
- Crystals, And After-Treatments Of Crystals (AREA)
Abstract
The utility model relates to the technical field of straight pulling single crystal, and provides a spliced combined crucible bang for a single crystal furnace, which comprises an outer layer part and an inner layer part, wherein the outer layer part is integrally in a cylindrical structure, and the inner layer part is integrally in an arc structure and is attached to the inner side wall of the outer layer part; the inner layer part is uniformly distributed with a plurality of parts around the middle part of the outer layer part, and the inner side wall of the outer layer part is completely covered. The utility model discloses thereby the inner layer part that sets up combines the crucible of constituting mosaic structure with outer part through the mode of concatenation, for traditional an organic whole crucible nation, the cost is reduced has moreover to change the damage part if having the damage only, need not the overall change, and it is very convenient to maintain.
Description
Technical Field
The utility model relates to a vertical pulling single crystal technology field, concretely relates to concatenation combination crucible bang for single crystal growing furnace.
Background
The current energy demand is huge, and the traditional energy is because reserves, environmental protection scheduling problem, demand decline gradually, and clean low-cost energy demand increases with each day, and wherein, solar photovoltaic has high-efficient low-cost advantage, has bigger development prospect than other wind energy, tidal energy etc. and monocrystalline silicon has extensive market as photovoltaic power generation's a base material.
The existing monocrystalline silicon production is mainly carried out in a monocrystalline furnace by a Czochralski method, the Czochralski monocrystalline has the advantage of higher efficiency than polycrystal, and the global occupation ratio of the monocrystalline is up to more than 80 percent due to the reduction of the technical innovation cost. During the pulling process of the monocrystal by the Czochralski method, a fused silicon liquid formed by a polycrystalline silicon raw material is carried by a quartz crucible, and the outside of the crucible needs to be protected by a crucible cover.
At present, an integrated carbon crucible pot is generally used in the industry, but the integrated carbon crucible pot has the following problems:
(1) the crucible pot body is high in cost, the purity of the carbon-carbon composite material is not enough, and the quartz crucible and the direct contact of the quartz crucible can generate crystallization so as to be polluted, so that the quartz crucible is broken, and the running time of the quartz crucible is seriously influenced.
(2) The uniformity of carbon heat conduction is poor relative to high-purity graphite, the power consumption is large, and the operation cost is high.
(3) The new crucible nation has damage or breach after using a period, often can withdraw from the use in order to practice thrift the cost and do not use the crucible nation promptly or reduce operating time, leaks the risk that the silicon accident took place and is higher.
SUMMERY OF THE UTILITY MODEL
Not enough to prior art, the utility model provides a concatenation combination crucible bang for single crystal growing furnace to solve the problem that the integrative crucible bang that uses among the prior art is with high costs, the compound material purity of carbon is not enough and leads to quartz crucible operating duration to be short.
In order to achieve the above purpose, the utility model provides a following technical scheme:
a spliced combined crucible pot for a single crystal furnace comprises:
the outer layer part is of a cylindrical structure as a whole; and
the inner layer part is integrally of an arc-shaped structure and is attached to the inner side wall of the outer layer part;
wherein, the inner layer part is evenly distributed with a plurality of parts around the middle part of the outer layer part and completely covers the inner side wall of the outer layer part.
In one embodiment disclosed in the application, the longitudinal section of the outer layer part is in a U-shaped structure, and the bottom of the outer layer part is provided with a circular through hole for a crucible shaft to pass through;
the longitudinal section of the inner layer part is of an L-shaped structure, and the bottom of the inner layer part is provided with an arc-shaped notch with the same radius as the circular through hole;
and a splicing seam is reserved between the side surfaces of the adjacent inner layer parts.
In one embodiment of the present disclosure, the inner layer member is made of a high purity graphite material.
In one embodiment of the present disclosure, the inner member is evenly distributed with 3 pieces around the middle of the outer member.
In one embodiment of the present disclosure, the side wall of the outer layer member has a plurality of heat conduction holes, and the heat conduction holes are uniformly distributed around the middle of the outer layer member.
In one embodiment of the present disclosure, the heat conduction hole is a hexagonal hole.
In one embodiment of the present disclosure, the splicing seam is staggered from the heat conduction hole.
In one embodiment disclosed in the application, the size of the splicing seam is 1-2 mm.
In one embodiment of the present disclosure, the outer layer member is made of carbon-carbon fiber.
Compared with the prior art, the beneficial effects of the utility model are that:
1. the arranged inner layer component is combined with the outer layer component in a splicing mode to form the crucible side of the splicing structure, so that the cost is reduced compared with the traditional integrated crucible side, and if the crucible side is damaged, only the damaged part needs to be replaced, the integral replacement is not needed, and the maintenance is very convenient;
2. the inner layer part is made of high-purity graphite, the high-purity graphite is in direct contact with the quartz crucible, and crystallization can be reduced, so that the quartz crucible is prevented from being polluted and cracked, the running time of the quartz crucible is effectively prolonged, and meanwhile, the high-purity graphite is good in heat conduction uniformity and can reduce power consumption;
3. the heat conduction and the heat utilization rate can be improved through the plurality of heat conduction holes arranged on the side wall of the outer layer part;
4. the outer layer part is of a net-shaped hollow structure by forming the hexagonal holes, so that the heat conduction and the heat utilization rate are improved, and the strength of the outer layer part cannot be reduced due to the existence of the heat conduction holes;
5. the splicing seams and the heat conduction holes are arranged in a staggered mode, so that heat generated by a heater in the single crystal furnace can be prevented from directly impacting the quartz crucible after penetrating through the heat conduction holes and the splicing seams, and the phenomenon that the quartz crucible is locally heated unevenly is prevented;
6. the outer layer part is made of carbon-carbon fiber, the carbon-carbon fiber is high in strength and low in cost, and the overall manufacturing cost of the crucible pot with the splicing structure is further reduced.
Drawings
In order to more clearly illustrate the embodiments of the present application or the technical solutions in the prior art, the drawings used in the description of the embodiments or the prior art will be briefly described below, and it is obvious that the drawings in the following description are only some embodiments of the present application, and for those skilled in the art, other drawings can be obtained according to these drawings without creative efforts.
Fig. 1 is a schematic perspective view of the present invention;
FIG. 2 is a perspective view of an outer member;
FIG. 3 is a schematic perspective view of the outer member at another angle;
fig. 4 is a perspective view of the inner layer member.
Detailed Description
In the following, only certain exemplary embodiments are briefly described. As those skilled in the art will recognize, the described embodiments may be modified in various different ways, all without departing from the spirit or scope of the present invention. Accordingly, the drawings and description are to be regarded as illustrative in nature, and not as restrictive.
In the description of the present invention, it is to be understood that the terms "center", "longitudinal", "lateral", "up", "down", "front", "back", "left", "right", "vertical", "horizontal", "top", "bottom", "inner", "outer", "clockwise", "counterclockwise", "axial", "radial", "circumferential", and the like, indicate orientations or positional relationships based on the orientations or positional relationships shown in the drawings, and are used merely for convenience of description and for simplification of description, and do not indicate or imply that the device or element referred to must have a particular orientation, be constructed and operated in a particular orientation, and therefore, should not be considered as limiting the present invention.
Furthermore, the terms "first", "second" and "first" are used for descriptive purposes only and are not to be construed as indicating or implying relative importance or implicitly indicating the number of technical features indicated. Thus, a feature defined as "first" or "second" may explicitly or implicitly include one or more of that feature. In the description of the present invention, "a plurality" means two or more unless specifically limited otherwise.
In the present invention, unless otherwise expressly stated or limited, the terms "mounted," "connected," and "fixed" are to be construed broadly and may, for example, be fixedly connected, detachably connected, or integrally formed; the connection can be mechanical connection, electrical connection or communication; either directly or indirectly through intervening media, either internally or in any other relationship. The specific meaning of the above terms in the present invention can be understood according to specific situations by those skilled in the art.
In the present disclosure, unless expressly stated or limited otherwise, the first feature "on" or "under" the second feature may comprise direct contact between the first and second features, or may comprise contact between the first and second features not directly. Also, the first feature being "on," "above" and "over" the second feature includes the first feature being directly on and obliquely above the second feature, or merely indicating that the first feature is at a higher level than the second feature. A first feature being "under," "below," and "beneath" a second feature includes the first feature being directly under and obliquely below the second feature, or simply meaning that the first feature is at a lesser elevation than the second feature.
The following disclosure provides many different embodiments or examples for implementing different features of the invention. In order to simplify the disclosure of the present invention, the components and arrangements of specific examples are described below. Of course, they are merely examples and are not intended to limit the present invention.
Embodiments of the present invention will be described in detail below with reference to the accompanying drawings.
Referring to fig. 1-4, the utility model provides a concatenation combination crucible bang for single crystal growing furnace, include:
an outer layer member 10 having a cylindrical structure as a whole; and
the inner layer component 20 is integrally in an arc-shaped structure and is attached to the inner side wall of the outer layer component 10;
wherein, the inner layer component 20 is evenly distributed with a plurality of pieces around the middle part of the outer layer component 10, and completely covers the inner side wall of the outer layer component 10.
Specifically, the longitudinal section of the outer layer member 10 is a U-shaped structure, and the bottom thereof is provided with a circular through hole 11 for passing a crucible shaft (not shown in the figure); the longitudinal section of the inner layer part 20 is of an L-shaped structure, and the bottom of the inner layer part is provided with an arc notch 21 with the same radius as the circular through hole 11; a splicing seam 30 is reserved between the side surfaces of the adjacent inner layer components 20 to prevent the inner layer components 20 from being damaged due to mutual extrusion caused by expansion after being heated. Thereby the inner layer part 20 that sets up combines to constitute mosaic structure's crucible bang through the mode of concatenation with outer layer part 10, for traditional integrative crucible bang, the cost is reduced has moreover to have to damage only to change the damage part, need not wholly change, and it is very convenient to maintain.
The inner layer part 20 is made of high-purity graphite, the high-purity graphite is in direct contact with the quartz crucible, and crystallization can be reduced, so that the quartz crucible is prevented from being polluted and cracked, the running time of the quartz crucible is effectively prolonged, and meanwhile, the high-purity graphite is good in heat conduction uniformity and capable of reducing power consumption.
In this embodiment, the inner member 20 is evenly distributed in 3 pieces around the middle of the outer member 10.
Referring to fig. 2 and 3, a plurality of heat conduction holes 12 are formed in the side wall of the outer layer member 10, and the heat conduction holes 12 are uniformly distributed around the middle of the outer layer member 10. Heat generated by the heater in the single crystal furnace is directly transferred to the inner layer part 20 through the heat conduction hole 12, and then the polycrystalline silicon raw material in the quartz crucible is heated. That is, the heat conduction and the heat utilization rate can be improved by the plurality of heat conduction holes 12 provided in the side wall of the outer layer member 10.
In the present embodiment, the heat conduction holes 12 are hexagonal holes, which can ensure the overall structural strength of the outer layer member 10. That is, the outer layer member 10 has a mesh-like hollow structure by forming the hexagonal holes, so that the strength of the outer layer member is not reduced by the heat conduction holes 12 while the heat conduction and the heat utilization rate are improved.
Referring to fig. 1, the splicing seams 30 are arranged in a staggered manner with respect to the heat conduction holes 12. Therefore, the heat generated by the heater in the single crystal furnace can be prevented from directly impacting the quartz crucible after passing through the heat conduction hole 12 and the splicing seam 30, and the phenomenon that the local heating of the quartz crucible is uneven can be prevented.
In the present embodiment, the size of the splicing seam 30 (i.e., the vertical distance between the side surfaces of the adjacent inner layer members 20) is 1-2 mm.
The above-mentioned embodiment is only the preferred embodiment of the present invention, and is not to the limitation of the technical solution of the present invention, as long as the technical solution can be realized on the basis of the above-mentioned embodiment without creative work, all should be regarded as falling into the protection scope of the right of the present invention.
Claims (9)
1. The utility model provides a concatenation combination crucible bang for single crystal growing furnace which characterized in that includes:
the outer layer part is of a cylindrical structure as a whole; and
the inner layer part is integrally of an arc-shaped structure and is attached to the inner side wall of the outer layer part;
wherein, the inner layer part is evenly distributed with a plurality of parts around the middle part of the outer layer part and completely covers the inner side wall of the outer layer part.
2. The splicing combined crucible pot for the single crystal furnace according to claim 1, is characterized in that:
the longitudinal section of the outer layer part is of a U-shaped structure, and the bottom of the outer layer part is provided with a circular through hole for the crucible shaft to pass through;
the longitudinal section of the inner layer part is of an L-shaped structure, and the bottom of the inner layer part is provided with an arc-shaped notch with the same radius as the circular through hole;
and a splicing seam is reserved between the side surfaces of the adjacent inner layer parts.
3. The spliced combined crucible pot for the single crystal furnace according to claim 2, wherein the inner layer part is made of high-purity graphite.
4. The spliced combined crucible pot for the single crystal furnace according to claim 2 or 3, wherein 3 pieces of the inner layer component are uniformly distributed around the middle part of the outer layer component.
5. The spliced combined crucible pot for the single crystal furnace according to claim 4, wherein a plurality of heat conducting holes are formed in the side wall of the outer layer part, and the heat conducting holes are uniformly distributed around the middle part of the outer layer part.
6. The spliced combined crucible pot for the single crystal furnace according to claim 5, wherein the heat conduction holes are hexagonal holes.
7. The spliced combined crucible pot for the single crystal furnace according to claim 5 or 6, wherein the splicing seam and the heat conduction hole are arranged in a staggered manner.
8. The splicing combined crucible pot for the single crystal furnace according to claim 7, wherein the size of the splicing seam is 1-2 mm.
9. The spliced combined crucible cover for the single crystal furnace according to any one of claims 1 to 3, wherein the outer layer component is made of carbon-carbon fiber.
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
CN202122999407.8U CN216738632U (en) | 2021-12-02 | 2021-12-02 | Spliced combined crucible pot for single crystal furnace |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
CN202122999407.8U CN216738632U (en) | 2021-12-02 | 2021-12-02 | Spliced combined crucible pot for single crystal furnace |
Publications (1)
Publication Number | Publication Date |
---|---|
CN216738632U true CN216738632U (en) | 2022-06-14 |
Family
ID=81931219
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
CN202122999407.8U Active CN216738632U (en) | 2021-12-02 | 2021-12-02 | Spliced combined crucible pot for single crystal furnace |
Country Status (1)
Country | Link |
---|---|
CN (1) | CN216738632U (en) |
-
2021
- 2021-12-02 CN CN202122999407.8U patent/CN216738632U/en active Active
Similar Documents
Publication | Publication Date | Title |
---|---|---|
CN216738632U (en) | Spliced combined crucible pot for single crystal furnace | |
CN202323100U (en) | Straight-pull eight-inch silicon single crystal thermal field | |
CN207883704U (en) | A kind of backboard carries the photovoltaic module of projective structure | |
CN209836368U (en) | Ingot furnace for directionally solidifying and growing crystalline silicon | |
CN219099375U (en) | Heater for single crystal furnace and single crystal furnace | |
CN201634795U (en) | Czochralski crystal furnace graphite crucible | |
CN101845641B (en) | Immersion-type rare earth electrolyzer | |
CN213538158U (en) | Carbon fiber draft tube convenient to installation | |
CN201933196U (en) | Graphite crucible for single crystal furnace | |
CN102214728B (en) | Technology for processing dead layers on surface of crystalline silicon solar cell | |
CN208567544U (en) | Corrugated cone cylinder water cooling equipment in one kind | |
CN215628416U (en) | Bottom heater and single crystal furnace | |
CN212223146U (en) | Combined heater for czochralski silicon furnace | |
CN101724889A (en) | System for thermal field of straight pulling silicon single crystal furnace | |
CN217948332U (en) | Large-size thermal field structure and heat insulation device thereof | |
CN219603764U (en) | Oxygen reduction assembly and thermal field for single crystal furnace | |
CN202954138U (en) | High-efficient polycrystalline cast ingot thermal field | |
CN220999946U (en) | Single crystal furnace heater | |
CN217869175U (en) | Thermal field heat preservation device of single crystal furnace | |
CN102719892B (en) | Sapphire crystal growth furnace energy saving device | |
CN219991780U (en) | Thermal field for heat preservation device and single crystal furnace | |
CN220489703U (en) | Polycrystalline silicon reduction furnace and chassis thereof | |
CN202936515U (en) | Kyropoulos-method crystal growing furnace | |
CN220433070U (en) | Annular heater for Czochralski single crystal furnace | |
CN219621297U (en) | Oxygen reduction device for single crystal furnace and single crystal furnace |
Legal Events
Date | Code | Title | Description |
---|---|---|---|
GR01 | Patent grant | ||
GR01 | Patent grant |