CN218647924U

CN218647924U - Low-voltage controllable relay power module

Info

Publication number: CN218647924U
Application number: CN202223127744.9U
Authority: CN
Inventors: 冯冰杰; 封丹婷; 朱妍旭
Original assignee: Jiaxing Starpower Microelectronics Co ltd
Current assignee: Jiaxing Starpower Microelectronics Co ltd
Priority date: 2022-11-24
Filing date: 2022-11-24
Publication date: 2023-03-17
Anticipated expiration: 2032-11-24

Abstract

The utility model provides a controllable relay power module of low pressure relates to power electronics technical field, include: the top side of the shell is provided with two symmetrical accommodating grooves, and the two accommodating grooves are provided with openings in opposite directions respectively; the transverse parts of the two T-shaped heat dissipation substrates are correspondingly fixed in the two accommodating grooves, one surface of the transverse parts facing the top side of the shell is an exposed surface, and the vertical parts of the two T-shaped heat dissipation substrates respectively extend out of the shell from the corresponding openings of the accommodating grooves; one surface of each transverse part, which is far away from the top side of the shell, is integrated with at least one low-voltage mosfet chip and a signal substrate; the signal pole of each low-voltage mosfet chip is respectively connected with the two signal substrates, wherein the low-voltage mosfet chip integrated on one transverse part is connected with the corresponding low-voltage mosfet chip on the other transverse part; and one end of the signal terminal is fixed on the signal substrate, and the other end of the signal terminal extends out of the shell. The beneficial effects are that the occupied volume is greatly reduced; the requirement on the radiator is reduced, the power density is greatly improved, and the installation is firm.

Description

Low-voltage controllable relay power module

Technical Field

The utility model relates to a power electronic technology field especially relates to a controllable relay power module of low pressure.

Background

The traditional relay still adopts a mechanical structure scheme of an electromagnetic armature as a main scheme, the scheme has a relatively large disadvantage in service life, is not beneficial to long-time application, inevitably generates noise, and has a multiplied volume when bidirectional transmission is needed.

In addition to the mechanical structure scheme, the existing scheme of realizing the relay by adopting a discrete device through external series-parallel connection exists, but the application environment of the scheme is harsh due to the small heat capacity of the discrete device, and a large radiator is required to be arranged on the external part to enlarge the heat capacity and realize the heat dissipation when the discrete device is applied, so that the volume of the whole relay cannot be reduced.

SUMMERY OF THE UTILITY MODEL

To the problem that exists among the prior art, the utility model provides a controllable relay power module of low pressure, include:

the top side of the shell is provided with two symmetrical accommodating grooves, and the two accommodating grooves are provided with openings in opposite directions respectively;

the transverse parts of the two T-shaped radiating substrates are respectively and correspondingly fixed in the two accommodating grooves, one surface of each T-shaped radiating substrate facing the top side of the shell is a bare surface, and the vertical parts of the two T-shaped radiating substrates respectively extend out of the shell from the corresponding openings of the accommodating grooves to be connected with an external busbar;

at least one low-voltage mosfet chip and one signal substrate are integrated on one surface of each transverse part, which is far away from the top side of the shell, and the mosfet chips integrated on the two transverse parts correspond to each other;

the signal electrode of each low-voltage mosfet chip is respectively connected with the two signal substrates, wherein the low-voltage mosfet chip integrated on one transverse part is connected with the corresponding low-voltage mosfet chip on the other transverse part to form a controllable relay circuit;

and one end of each signal terminal is fixed on the signal substrate, and the other end of each signal terminal extends out of the shell.

Preferably, the surface of each T-shaped heat dissipation substrate is plated with metal.

Preferably, the vertical portion is fixedly connected with the external busbar by adopting a soldering or laser welding mode.

Preferably, the vertical portion is provided with a through hole, and the vertical portion is fixedly connected with the external busbar through a bolt penetrating through the through hole.

Preferably, at least two signal terminals are fixed on each signal substrate, and the parts of the two signal terminals extending out of the housing are located on two sides of the corresponding vertical part as lead-out pins.

Preferably, each of the signal terminals is arranged in a central symmetry manner.

Preferably, the portion of each of the lead pins of the signal terminals extending out of the housing is bent toward the top side of the housing to form an L shape.

Preferably, the signal electrode of the low-voltage mosfet chip and the two signal substrates, and the low-voltage mosfet chip integrated on one of the transverse portions and the corresponding low-voltage mosfet chip on the other transverse portion are connected by binding lines.

Preferably, the housing is formed by plastic molding.

Preferably, the signal substrate is an insulating substrate, and the corresponding T-shaped heat dissipation substrates are connected by soldering.

The technical scheme has the following advantages or beneficial effects:

1) By integrating the controllable relay circuit inside, the volume occupied by the low-voltage controllable relay power module is greatly reduced;

2) By adopting the T-shaped radiating substrate, the size of the radiating substrate is enlarged as much as possible, so that the radiating area and the heat capacity are enlarged; the vertical part of the T-shaped radiating substrate is used as an output stage and is connected with an external bus bar, and the external bus bar can also improve certain heat capacity and can bear large current compared with a circuit board;

3) The heat generated by the conduction of the low-voltage mosfet chip can be dissipated to the maximum extent, the requirement on a radiator is reduced, and the power density is greatly improved;

4) The pins of the signal terminals adopt a symmetrical layout structure, so that welding points are uniformly stressed when the low-voltage controllable relay power module and the PBC are welded and installed, and the installation is firm.

Drawings

Fig. 1 is a schematic diagram of an external top view structure of a low voltage controllable relay power module according to a preferred embodiment of the present invention;

fig. 2 is a schematic diagram of an internal bottom view of a low-voltage controllable relay power module according to a preferred embodiment of the present invention;

fig. 3 is a schematic side perspective view of a low-voltage controllable relay power module according to a preferred embodiment of the present invention

Fig. 4 is a partial enlarged view of a portion a in fig. 3 according to a preferred embodiment of the present invention;

fig. 5 is a schematic structural view illustrating the connection between the low voltage mosfet chip and the two signal substrates and the connection between the low voltage mosfet chips through the binding lines according to the preferred embodiment of the present invention;

fig. 6 is a circuit diagram of a controllable relay according to a preferred embodiment of the present invention;

fig. 7 is a schematic diagram of the current flow of the relay from left to right according to the preferred embodiment of the present invention;

fig. 8 is a schematic diagram illustrating a current flow of the relay from right to left according to a preferred embodiment of the present invention.

Detailed Description

The present invention will be described in detail below with reference to the accompanying drawings and specific embodiments. The present invention is not limited to this embodiment, and other embodiments may also belong to the scope of the present invention as long as the gist of the present invention is satisfied.

In a preferred embodiment of the present invention, based on the above problems existing in the prior art, there is provided a low voltage controllable relay power module, as shown in fig. 1 to 5, including:

the shell comprises a shell 1, wherein two symmetrical accommodating grooves are formed in the top side of the shell 1, and openings are formed in the opposite directions of the two accommodating grooves;

the transverse parts 21 of the two T-shaped radiating substrates 2 are respectively and correspondingly fixed in the two accommodating grooves, one surface of each T-shaped radiating substrate 2 facing the top side of the shell 1 is a bare surface, and the vertical parts 22 of the two T-shaped radiating substrates 2 respectively extend out of the shell 1 from the corresponding openings of the accommodating grooves so as to be connected with an external busbar;

at least one low-voltage mosfet chip 3 and one signal substrate 4 are integrated on one surface of each transverse part 21, which is far away from the top side of the shell 1, and the mosfet chips 3 integrated on the two transverse parts 21 correspond to each other;

the signal pole of each low-voltage mosfet chip 3 is respectively connected with two signal substrates 4, wherein the low-voltage mosfet chip 3 integrated on one transverse part 21 is connected with the corresponding low-voltage mosfet chip 3 on the other transverse part 21 to form a controllable relay circuit;

and a plurality of signal terminals 5, one end of each signal terminal 5 is fixed on the signal substrate 4, and the other end of each signal terminal 5 extends out of the shell 1.

Specifically, as shown in fig. 6, the controllable relay circuit of the low-voltage controllable relay power module in the technical scheme includes that a first N-type field effect transistor Q1 and a second N-type field effect transistor Q2 of a common source are used as a low-voltage mosfet chip 3, wherein a drain of the first N-type field effect transistor Q1 is used as a first pin 1p of the low-voltage controllable relay power module, a drain of the second N-type field effect transistor Q2 is used as a second pin 2p of the low-voltage controllable relay power module, a gate of the first N-type field effect transistor Q1 is used as a third pin 3p of the low-voltage controllable relay power module, a source of the first N-type field effect transistor Q1 is used as a fourth pin 4p of the low-voltage controllable relay power module, a source of the second N-type field effect transistor Q2 is used as a fifth pin 5p of the low-voltage controllable relay power module, and a gate of the second N-type field effect transistor Q1 is used as a sixth pin 6p of the low-voltage controllable relay power module. The first pin 1p and the second pin 2p correspond to the two vertical portions 22 of the two T-shaped heat dissipation substrates 2 in fig. 1 and 2, respectively, and the third pin 3p, the fourth pin 4p, the fifth pin 5p, and the sixth pin 6p correspond to the signal terminals 5 in fig. 1 and 2, respectively.

Further, the current flow of the relay may be from left to right, i.e., from the first pin 1p to the second pin 2p as shown by the arrow in fig. 7, or from right to left, i.e., from the second pin 2p to the first pin 1p as shown by the arrow in fig. 8. Only the switches of the first N-type field effect transistor Q1 and the second N-type field effect transistor Q2 need to be controlled. The large current flowing between the first pin 1p and the second pin 2p can be controlled only by controlling the third pin 3p, the fourth pin 4p, the fifth pin 5p and the sixth pin 6p through small voltage and small current.

Further, the low voltage mosfet chips 3 distributed on the two lateral portions 21 are symmetrical and in one-to-one correspondence with each other. Taking the controllable relay circuit in fig. 6 as an example, the first N-type field effect transistor Q1 and the second N-type field effect transistor Q2 are respectively used as a driving unit, and at least one chip is required in one driving unit to realize driving, and corresponding to fig. 6, one low-voltage mosfet chip 3 is integrated on each lateral portion 21 of the low-voltage controllable relay power module.

In a practical application scenario, in order to increase the driving capability of each driving unit, a chip parallel connection mode may be adopted, that is, the first N-type field effect transistor Q1 is connected in parallel with one or more N-type field effect transistors, and the second N-type field effect transistor Q2 is correspondingly connected in parallel with one or more N-type field effect transistors, so that the number of chips of one driving unit may reach 2 or 3, that is, the low-voltage mosfet chips 3 on one transverse portion 21 may be set to 1 or 2 or 3 low-voltage mosfet chips 3 according to the requirement of the driving capability. Fig. 1 and 2 show a scenario in which 3 low-voltage mosfet chips 3 are arranged on each lateral portion 21.

Preferably, the shell 1 is rectangular and made of plastic packaging materials, the shell 1 is provided with an upper region dividing line and a lower region dividing line, the periphery of the shell 1 can be provided with chamfers, and the sizes of the upper chamfers and the lower chamfers of the dividing lines can be kept consistent or inconsistent.

In summary, it can be seen that the volume occupied by the low-voltage controllable relay power module is greatly reduced by integrating the controllable relay circuit inside. Simultaneously because the one side of horizontal portion 21 towards casing 1 top side is the exposed surface, preferably is on a parallel with or is higher than casing 1's top side surface a little, vertical portion 22 is whole exposes in casing 1 outside, has enlarged the size of heat dissipation substrate as far as possible to enlarge heat radiating area, enlarge the heat capacity, and the exposed surface can direct natural cooling heat dissipation, need not to install the radiator additional, has further reduced the volume that low pressure controllable relay power module occupy. It can be understood that, according to actual requirements, a heat sink may be added on the exposed surface to dissipate heat through the heat sink.

In addition, the vertical part 22 of the T-shaped radiating substrate 2 is used as an output stage to be connected with an external bus bar, which is used for radiating and is also used as a part of a circuit structure, and the external bus bar can also improve certain heat capacity and can bear large current compared with a circuit board; meanwhile, the vertical part 22 and the whole external busbar connection area can also play a role in heat dissipation, so that the power density can be effectively increased.

In the preferred embodiment of the present invention, the surface of each T-shaped heat dissipation substrate 2 is plated with metal.

Specifically, in the present embodiment, the electroplating metal is a solderable electroplating metal that is not easily oxidized, and includes, but is not limited to, tin or nickel. Through the surface electroplating metal at T type heat dissipation base plate 2, owing to be the exposed surface in the one side towards casing 1 top side, can avoid the exposed surface to use for a long time and take place influences radiating effect such as oxidation, in the one side that deviates from casing 1 top side, conveniently carry out electrical connection. The two T-shaped heat dissipation substrates 2 are symmetrical to each other, and the material of the heat dissipation substrate 2 is preferably aluminum material or copper material,

The utility model discloses an in the preferred embodiment, according to the practical application demand, can set up perforating hole 221 on vertical portion 22, also can not set up perforating hole 221, when not setting up perforating hole 221, vertical portion 22 adopts the outside female arranging of mode fixed connection of soldering or laser welding. When the through hole is opened, the vertical portion 22 is fixedly connected to the external bus bar by a bolt inserted through the through hole 221.

In the preferred embodiment of the present invention, at least two signal terminals 5 are fixed on each signal substrate 4, and the portions of the two signal terminals 5 extending out of the housing 1 are located at two sides of the corresponding vertical portion 22 as lead-out pins.

Specifically, in this embodiment, in order to ensure that each welding spot is stressed uniformly during installation, each signal terminal 5 is distributed in central symmetry, the total number of the signal terminals 5 is not limited, and four signal terminals 5 may be respectively distributed on two sides of two vertical portions 22, that is, only one signal terminal 5 is arranged on each side, or as shown in fig. 1 and fig. 2, two signal terminals 5 are arranged on each side, and then the total number of the signal terminals 5 is eight, and so on, more signal terminals may be arranged, and it is only necessary to ensure that each signal terminal is distributed in central symmetry. The material of the signal terminal 5 may be aluminum material or copper material, and the surface thereof is preferably plated with solderable plating metal which is not easily oxidized, including but not limited to tin or nickel.

In the preferred embodiment of the present invention, the pin of each signal terminal 5 is bent toward the top side of the housing 1 to form an L-shape.

In the preferred embodiment of the present invention, as shown in fig. 5, the signal electrodes of the low voltage mosfet chips 3 are connected to the two signal substrates 4, and the low voltage mosfet chips 3 integrated on one of the horizontal portions 21 are connected to the corresponding low voltage mosfet chips 3 on the other horizontal portion 21 through the binding lines 6.

Specifically, in this embodiment, the low-voltage mosfet chip 3 is mounted on the T-shaped heat dissipation substrate 2 by a conventional power device manufacturing method, and is connected to form a circuit through the binding line 6. The signal part is led out from the surface of the low-voltage mosfet chip 3 to the signal substrate 4 through the binding line 6. The signal is finally led out through the signal terminal 5. The signal terminals 5 are symmetrically distributed on two sides of the module, so that the signal terminals are conveniently and stably connected with an external PCB.

In the preferred embodiment of the present invention, the housing 1 is formed by plastic sealing.

Specifically, in this embodiment, the housing 1 is formed by plastic molding, and wraps all components including the T-shaped heat dissipation substrate 2, the signal substrate 4, the signal terminal 5, the low-voltage mosfet chip 3, the binding wire 6, and the like, thereby playing a role in electrical insulation and protection, and improving reliability.

In the preferred embodiment of the present invention, the signal substrate 4 is an insulating substrate, and is connected to the corresponding T-shaped heat dissipation substrate 2 by soldering.

Specifically, in this embodiment, the signal substrate 4 is an insulating substrate, and is connected to the T-shaped heat dissipation substrate 2 by soldering, and can dissipate heat from the binding wire 6, and the material of the signal substrate 4 includes, but is not limited to, PCB, DBC, HIC, IMS, and other materials.

The above description is only a preferred embodiment of the present invention, and not intended to limit the scope of the present invention, and it should be understood that all modifications and obvious variations of the present invention as described and illustrated herein are included within the scope of the present invention.

Claims

1. A low voltage controllable relay power module, comprising:

at least one low-voltage mosfet chip and a signal substrate are integrated on one surface of each transverse part, which is far away from the top side of the shell, and the mosfet chips integrated on the two transverse parts correspond to each other;

2. The low voltage controllable relay power module according to claim 1, wherein a surface of each said T-shaped heat sink substrate is plated with metal.

3. The low-voltage controllable relay power module according to claim 2, wherein the vertical portion is fixedly connected to the external busbar by soldering or laser welding.

4. The low-voltage controllable relay power module according to claim 1, wherein the vertical portion is provided with a through hole, and the vertical portion is fixedly connected to the external busbar through a bolt penetrating through the through hole.

5. The low-voltage controllable relay power module according to claim 1, wherein at least two signal terminals are fixed on each signal substrate, and portions of the two signal terminals extending out of the housing are located on two sides of the corresponding vertical portion as lead-out pins.

6. The low voltage controllable relay power module according to claim 5, wherein each of said signal terminals is arranged in a central symmetrical distribution.

7. The low voltage controllable relay power module according to claim 5, wherein said pin-out of each of said signal terminals is bent into an L-shape toward a top side of said housing.

8. The low-voltage controllable relay power module according to claim 1, wherein the signal electrodes of the low-voltage mosfet chips and the two signal substrates, and the low-voltage mosfet chip integrated on one of the lateral portions and the corresponding low-voltage mosfet chip on the other lateral portion are connected by a binding line.

9. The low voltage controllable relay power module according to claim 1, wherein the housing is formed by plastic molding.

10. The low-voltage controllable relay power module according to claim 1, wherein the signal substrate is an insulating substrate, and the corresponding T-shaped heat dissipation substrates are connected by soldering.