CN218632030U

CN218632030U - Ultra-low power consumption semiconductor power device

Info

Publication number: CN218632030U
Application number: CN202222802852.5U
Authority: CN
Inventors: 刘曦
Original assignee: Shenzhen Bolema Electronics Co ltd
Current assignee: Shenzhen Bolema Electronics Co ltd
Priority date: 2022-10-24
Filing date: 2022-10-24
Publication date: 2023-03-14
Anticipated expiration: 2032-10-24

Abstract

The utility model discloses an ultra-low power consumption semiconductor power device, including the semiconductor power device body: the semiconductor power device comprises a semiconductor power device body and is characterized in that pins are arranged on the outer walls of the two sides of the semiconductor power device body, a limiting part is arranged on the semiconductor power device body and below the pins, the limiting part comprises a bearing block, a concave structure connected with the pins in a clamped mode is arranged on the bearing block, and a heat dissipation structure communicated with the concave structure is arranged on the bearing block. The utility model discloses in, this semiconductor power device is through the bearing piece that sets up to be equipped with the sunk structure with pin looks adaptation on the bearing piece, can play spacing clamping action to the position and the state of pin, prevent that the pin from taking place skew or crooked phenomenon when the welding atress, through the heat radiation structure who sets up on the bearing piece, can form the heat dissipation channel who switches on with pin and sunk structure contact surface on the bearing piece, reduce the operating temperature of pin department, and then improve the stability of pin.

Description

Ultra-low power consumption semiconductor power device

Technical Field

The utility model relates to a semiconductor power device technical field especially relates to an ultra-low power consumption semiconductor power device.

Background

The semiconductor power device is mainly used for high-power electronic devices in the aspects of electric energy conversion and control circuits of power equipment, and the power device is almost used in all electronic manufacturing industries, including notebooks, PCs, servers, displays, various instruments, various control equipment and the like in the field of computers.

Chinese patent publication No.: the utility model discloses an ultra-low power consumption semiconductor power device, including the semiconductor power device body, the external fixed surface of semiconductor power device body is connected with the fixed block, first recess has been seted up on the semiconductor power device body, sliding connection has the pin in the first recess, first spout has been seted up to the side of first recess, sliding connection has first slider on the first spout, first slider and pin fixed connection, the bottom fixedly connected with leg of pin, seted up first welding hole on the leg, the third recess has been seted up to the side of semiconductor power device body, sliding connection has the connecting plate on the third recess, the top fixedly connected with welding plate of connecting plate, the second welding hole has been seted up on the welding plate, the bottom fixedly connected with welding plate in second welding hole, the bleeder vent has been seted up at the top of semiconductor power device body.

The pins of the semiconductor power device are directly exposed outside, so that the periphery of the pins is not provided with a limiting and clamping structure, and when the pins are extruded by external force during welding or installation, the pins can be bent or displaced under the action of the external force, so that the contact of two adjacent pins is easy to occur, and the position stability of the pins of the semiconductor power device is reduced.

SUMMERY OF THE UTILITY MODEL

The utility model aims at providing an adopt sunk structure to carry out spacing centre gripping to the pin position, improve a super low-power consumption semiconductor power device of pin positional stability.

In order to achieve the above object, the present invention provides the following technical solutions: an ultra-low power consumption semiconductor power device comprises a semiconductor power device body:

pins are arranged on the outer walls of the two sides of the semiconductor power device body;

a limiting part is arranged on the semiconductor power device body and below the pins, the limiting part comprises a bearing block, and a concave structure clamped with the pins is arranged on the bearing block;

and the bearing block is provided with a heat dissipation structure communicated with the sunken structure.

As a further description of the above technical solution:

the recessed structure is an L-shaped clamping groove formed in the bearing block, and the clamping groove is matched with the top horizontal end and the vertical end of the pin.

As a further description of the above technical solution:

the heat radiation structure comprises ventilation holes which are arranged in the bearing block and distributed along the length direction of the bearing block, and the ventilation holes are communicated with the clamping groove through the ventilation holes.

As a further description of the above technical solution:

also includes a support member;

the support piece comprises a supporting seat, a limiting block is arranged on the supporting seat, and the limiting block is clamped with a limiting groove in the bottom of the semiconductor power device body.

As a further description of the above technical solution:

the thickness of the bearing block is smaller than the height of the vertical end of the pin.

As a further description of the above technical solution:

the bottom horizontal end of the pin is positioned below the bearing block, and the lower surface of the pin and the lower surface of the supporting seat are positioned on the same horizontal plane.

In the technical scheme, the utility model provides a pair of ultra-low power consumption semiconductor power device has following beneficial effect:

(1) This semiconductor power device is through the bearing piece that sets up to be equipped with on the bearing piece with the sunk structure of pin looks adaptation, can play spacing clamping action to the position and the state of pin, improve the intensity of pin, prevent that the pin from taking place skew or crooked phenomenon when the welding atress, and then avoid the mutual contact between two adjacent pins.

(2) The heat dissipation channel which is communicated with the contact surface of the pin and the concave structure can be formed on the bearing block through the heat dissipation structure arranged on the bearing block, so that heat generated by the pin during welding or working can be dissipated and conducted outwards as much as possible, the working temperature of the pin is reduced, and the stability of the pin is improved.

Drawings

In order to more clearly illustrate the embodiments of the present application or the technical solutions in the prior art, the drawings required to be used in the embodiments will be briefly described below, it is obvious that the drawings in the following description are only some embodiments described in the present invention, and other drawings can be obtained by those skilled in the art according to these drawings.

Fig. 1 is a schematic structural diagram of an ultra-low power semiconductor power device according to an embodiment of the present invention;

fig. 2 is a schematic structural diagram of a semiconductor power device body and a limiting member according to an embodiment of the present invention;

fig. 3 is a schematic structural diagram of a limiting member according to an embodiment of the present invention;

fig. 4 is a schematic structural diagram of a supporting member according to an embodiment of the present invention.

Description of reference numerals:

1. a semiconductor power device body; 11. a limiting groove; 2. a limiting member; 21. a bearing block; 22. a clamping groove; 23. a vent hole; 24. heat dissipation holes; 3. a support member; 31. a supporting seat; 32. a limiting block; 4. and (7) a pin.

Detailed Description

In order to make the technical solution of the present invention better understood by those skilled in the art, the present invention will be further described in detail with reference to the accompanying drawings.

As shown in fig. 1 to 4, an ultra-low power consumption semiconductor power device includes a semiconductor power device body 1:

pins 4 are arranged on the outer walls of the two sides of the semiconductor power device body 1, the pins 4 are of a Z-shaped structure and are equidistantly and parallelly distributed on the outer walls of the two sides of the semiconductor power device body 1;

the semiconductor power device body 1 is provided with the limiting part 2 below the pins 4, the limiting part 2 comprises a bearing block 21, the bearing block 21 is provided with a concave structure clamped with the pins 4, and the position and the state of the pins 4 can be limited and clamped by the bearing block 21 and the concave structure matched with the pins 4, so that the strength of the pins 4 is improved, the pins 4 are prevented from being deviated or bent when being subjected to welding stress, and the two adjacent pins 4 are prevented from being contacted with each other;

the heat dissipation structure communicated with the recessed structure is arranged on the bearing block 21, and a heat dissipation channel communicated with the contact surface of the pin 4 and the recessed structure can be formed on the bearing block 21, so that heat generated by the pin 4 during welding or working can enter the heat dissipation structure as far as possible and be dissipated and conducted outwards, the working temperature of the pin 4 is reduced, and the stability of the pin 4 is improved.

The recessed structure is for seting up the centre gripping groove 22 of L shape on bearing block 21, and centre gripping groove 22 and pin 4's top horizontal end and vertical looks adaptation, bearing block 21's thickness is less than the height of pin 4 vertical end, pin 4's bottom horizontal end is located bearing block 21's below, pin 4's top horizontal end and vertical end can imbed respectively in the horizontal end and the vertical end of centre gripping groove 22, can play the spacing effect of centre gripping to pin 4, make pin 4 receive external force when welding or installation and extrude on, play spacing guard action to pin 4's position state, prevent that pin 4 from taking place the phenomenon of bending or skew after the atress, and then avoid two adjacent pin 4 contaction.

The heat radiation structure is including seting up in bearing block 21 and along its length direction's ventilation hole 23 that distributes, ventilation hole 23 passes through louvre 24 and centre gripping groove 22 intercommunication, pin 4 is when welding or long-time work use, pin 4 can produce the heat with the junction in centre gripping groove 22, the heat can enter into ventilation hole 23 through louvre 24 this moment in, and outwards scatter and disappear through ventilation hole 23, can play ventilation cooling's effect to the junction of pin 4 and bearing block 21.

Still include support piece 3, support piece 3 includes supporting seat 31, be equipped with stopper 32 on supporting seat 31, and stopper 32 and the 11 joints in spacing groove 11 of 1 bottom of semiconductor power device body, the lower surface of pin 4 and the lower surface of supporting seat 31 are in same horizontal plane, install supporting seat 31 on the base plate in advance, through stopper 32 and the corresponding joint of spacing groove 11, can fix a position the installation welding position of semiconductor power device body 1, improve the accuracy of semiconductor power device body 1 and base plate installation position, the installation operating efficiency of semiconductor power device body 1 has been improved.

While certain exemplary embodiments of the present invention have been described above by way of illustration only, it will be apparent to those of ordinary skill in the art that the described embodiments may be modified in various different ways without departing from the spirit and scope of the present invention. Accordingly, the drawings and description are illustrative in nature and should not be construed as limiting the scope of the invention.

Claims

1. An ultra-low power consumption semiconductor power device, comprising a semiconductor power device body (1), characterized in that:

pins (4) are arranged on the outer walls of the two sides of the semiconductor power device body (1);

a limiting piece (2) is arranged on the semiconductor power device body (1) and below the pin (4), the limiting piece (2) comprises a bearing block (21), and a concave structure clamped with the pin (4) is arranged on the bearing block (21);

be equipped with the heat radiation structure who switches on with sunk structure on bearing block (21), and heat radiation structure is including offering in bearing block (21) and along ventilation hole (23) that its length direction distributes, ventilation hole (23) are through louvre (24) and centre gripping groove (22) intercommunication.

2. The ultra-low power consumption semiconductor power device according to claim 1, characterized in that: the recessed structure is a clamping groove (22) which is arranged on the bearing block (21) in an L shape, and the clamping groove (22) is matched with the top horizontal end and the vertical end of the pin (4).

3. The ultra-low power consumption semiconductor power device according to claim 1, characterized in that: further comprising a support (3);

the support piece (3) comprises a supporting seat (31), a limiting block (32) is arranged on the supporting seat (31), and the limiting block (32) is connected with a limiting groove (11) at the bottom of the semiconductor power device body (1) in a clamping mode.

4. An ultra-low power consumption semiconductor power device according to claim 2, characterized in that: the thickness of the bearing block (21) is smaller than the height of the vertical end of the pin (4).

5. The ultra-low power consumption semiconductor power device according to claim 1, characterized in that: the bottom horizontal end of the pin (4) is positioned below the bearing block (21), and the lower surface of the pin (4) and the lower surface of the support seat (31) are positioned on the same horizontal plane.