CN218444241U - Film stress monitoring device - Google Patents

Abstract

The utility model relates to a film stress monitoring device, which comprises an installation part, an emitting part, a filtering part and a receiving part, wherein an installation cavity is formed in the installation part; the emitting piece is arranged on the inner wall of one side of the mounting cavity, the emitting piece is used for emitting laser, and the inner wall of the other side opposite to the emitting piece is used for arranging a piece to be tested; the filter is arranged between the emitting part and the part to be detected, the laser emitted by the emitting part can pass through the filter to the part to be detected, the part to be detected can reflect the laser to the filter, and the filter can refract the laser to form refracted laser; the receiving member is provided on an inner wall of a side where the emitting member is installed, and the receiving member is capable of receiving the refracted laser light. The film stress monitoring device is simple in structure, convenient and fast to operate, stress information is obtained by comparing laser information, the film stress monitoring device is more accurate and reliable, and measurement deviation caused by complex structure is avoided.

Description

Film stress monitoring device

Technical Field

The utility model relates to a film device technical field especially relates to film stress monitoring devices.

Background

Various parts processed by a usual method are manufactured in a good thermal equilibrium state. Even so, there is still some level of residual stress. In contrast, many films are not produced in a thermally balanced state, but are produced integrally by synthesis starting from island-like structures. The islands are either solid or liquid and are not fully consolidated at thermal equilibrium, nor are they fully annealed after consolidation. The film formed in vacuum is certainly subjected to a certain stress. Its size varies with the manufacturing process conditions. The reasons for the generation of stress are complex, and there are two main reasons: firstly, the thermal stress is caused by different thermal expansion of the film and the substrate; one is caused by the imbalance in the film growth process or the microstructure characteristic of the film, called intrinsic stress. In order to better study the stress change in the film growth process, it is necessary to measure the stress in real time in a full-coverage manner in the film preparation process. The existing film stress monitoring device is complex in structure, large deviation is easily generated in the monitoring process, and the operation is complex.

SUMMERY OF THE UTILITY MODEL

Therefore, it is necessary to provide a thin film stress monitoring device with simple structure and convenient operation.

A film stress monitoring device comprises a mounting piece, an emitting piece, a filtering piece and a receiving piece, wherein a mounting cavity is formed in the mounting piece; the transmitting piece is arranged on the inner wall of one side of the installation cavity, the transmitting piece is used for transmitting laser, and the inner wall of the other side opposite to the transmitting piece is used for arranging a piece to be tested; the optical filtering piece is arranged between the emitting piece and the piece to be detected, laser emitted by the emitting piece can pass through the optical filtering piece to the piece to be detected, the piece to be detected can reflect the laser to the optical filtering piece, and the optical filtering piece can refract the laser to form refracted laser; the receiving piece is arranged on the inner wall of one side where the emitting piece is installed, and the receiving piece can receive the refracted laser light.

In one embodiment, the laser emitted by the emitting part can vertically enter the optical filter, and the laser reflected by the to-be-measured part enters the optical filter at an acute angle or an obtuse angle.

In one embodiment, the refractive index of the filter is greater than or equal to 95%.

In one embodiment, the film stress monitoring device further comprises a data acquisition element, the data acquisition element is electrically connected with the receiving element, the receiving element can generate laser information after receiving the refracted laser, and the data acquisition element is used for storing the laser information.

In one embodiment, the thin film stress monitoring device further comprises an information processing part, the information processing part is electrically connected with the data acquisition part, and the information processing part can convert the laser information into digital information.

In one embodiment, the emitting element is installed on a center point of an inner wall of one side of the installation cavity, and the receiving element is disposed on one side of the emitting element and disposed adjacent to the emitting element.

In one embodiment, the acquisition element is a multifunctional data acquisition card.

In one embodiment, the information processing device is a computer.

In one embodiment, the emitting element is installed on a center point of an inner wall of one side of the installation cavity, and the receiving element is disposed on one side of the emitting element and disposed adjacent to the emitting element.

In one embodiment, the film stress monitoring apparatus further comprises a mounting bracket disposed within the mounting cavity, the filter being mounted on the mounting bracket.

In one embodiment, the mounting bracket is removably disposed within the mounting cavity.

In one embodiment, the filter is removably mounted on the mounting bracket.

In one embodiment, the emitting member is a semiconductor laser.

In one embodiment, the receiving member is a photo-electric position sensitive detector.

Above-mentioned film stress monitoring devices sets up the transmitting part in the installation cavity of installed part to be located one side inner wall of installation cavity. The receiving member is disposed on the inner wall of the same side as the transmitting member is mounted. The piece to be measured is also arranged in the installation cavity and is positioned on the inner wall of one side opposite to the emitting piece and in the laser irradiation range of the emitting piece. The light filtering piece is further arranged between the emitting piece and the piece to be detected, laser emitted by the emitting piece can penetrate through the light filtering piece to reach the piece to be detected, then the piece to be detected reflects the laser, the reflected laser penetrates through the light filtering piece to be received by the receiving piece, and a film coating laser signal of the piece to be detected after film coating is obtained. And comparing the initial laser signal with the film coating laser signal to obtain stress information. The film stress monitoring device is simple in structure, convenient and fast to operate, stress information is obtained by comparing laser information, the film stress monitoring device is more accurate and reliable, and measurement deviation caused by complex structure is avoided.

Drawings

The accompanying drawings, which are included to provide a further understanding of the invention and are incorporated in and constitute a part of this application, illustrate embodiment(s) of the invention and together with the description serve to explain the invention and do not constitute a limitation on the invention.

In order to more clearly illustrate the technical solutions in the embodiments of the present invention, the drawings needed to be used in the description of the embodiments will be briefly described below, and it is obvious that the drawings in the following description are only some embodiments of the present invention, and it is obvious for those skilled in the art to obtain other drawings without creative efforts.

Fig. 1 is a schematic structural diagram of a thin film stress monitoring apparatus in an embodiment.

The elements in the figure are labeled as follows:

10. a film stress monitoring device; 100. a mounting member; 110. a mounting cavity; 200. a launch member; 300. a light filtering member; 400. a receiver; 500. a piece to be tested; 600. a data acquisition component; 700. an information processing part.

Detailed Description

In order to make the above objects, features and advantages of the present invention more comprehensible, embodiments of the present invention are described in detail below with reference to the accompanying drawings. In the following description, numerous specific details are set forth in order to provide a thorough understanding of the present invention. The present invention may, however, be embodied in many different forms and should not be construed as limited to the embodiments set forth herein, as those skilled in the art will be able to make similar modifications without departing from the spirit and scope of the present invention.

Referring to fig. 1, a thin film stress monitoring device 10 in an embodiment includes a mounting member 100, an emitting element 200, a filter element 300, and a receiving element 400, wherein a mounting cavity 110 is formed in the mounting member 100; the emitting part 200 is installed on the inner wall of one side of the installation cavity 110, the emitting part 200 is used for emitting laser, and the inner wall of the other side opposite to the emitting part 200 is used for arranging a part 500 to be tested; the optical filter 300 is arranged between the emitting part 200 and the to-be-detected part 500, the laser emitted by the emitting part 200 can pass through the optical filter 300 to the to-be-detected part 500, the to-be-detected part 500 can reflect the laser to the optical filter 300, and the optical filter 300 can refract the laser to form refracted laser; the receiving part 400 is disposed on an inner wall of a side where the emitting part 200 is installed, and the receiving part 400 can receive the refracted laser light.

The emitting member 200 is disposed in the mounting cavity 110 of the mounting member 100 and is located on one side inner wall of the mounting cavity 110. The receiving member 400 is disposed on the same side of the inner wall as the receiving member 200 is installed. The to-be-tested member 500 is also disposed in the installation cavity 110 at an inner wall of the side opposite to the emitting member 200 and within the laser irradiation range of the emitting member 200. Further, the optical filter 300 is arranged between the emitting piece 200 and the piece 500 to be tested, the laser emitted by the emitting piece 200 can penetrate through the optical filter 300 to reach the piece 500 to be tested, then the piece 500 to be tested reflects the laser, the reflected laser penetrates through the optical filter 300 to be received by the receiving piece 400, and a film coating laser signal of the piece 500 to be tested after film coating is obtained. And comparing the initial laser signal with the film coating laser signal to obtain stress information. The film stress monitoring device 10 is simple in structure and convenient and fast to operate, stress information is obtained by comparing laser information, the film stress monitoring device is more accurate and reliable, and measurement deviation caused by complex structure is avoided.

In one embodiment, the laser emitted from the emitter 200 can be vertically incident into the filter 300. The laser reflected by the object 500 is incident into the filter 300 at an acute angle or an obtuse angle. The laser emitted by the emitting part 200 is vertically injected into the filter part 300 to prevent the filter part 300 from refracting the laser, so that the laser is irradiated to the position of the part 500 to be detected, the receiving position of the receiving part 400 is accurate, the precision of received information is ensured, and the received data is more stable and reliable. The reflection angle of the dut 500 may be affected by the refractive index of the filter 300 and may also be affected by the coating film. Ideally, the laser beam reflected by the dut 500 enters the filter 300 at an angle approaching 90 °.

In one embodiment, the launching element 200 is installed on a center point of an inner wall of one side of the mounting cavity 110, and the receiving element 400 is disposed on one side of the launching element 200 and is disposed adjacent to the launching element 200. The installation positions of the receiving element 400, the device under test 500, and the filter 300 are then determined with the position of the emitting element 200 as a base point. The mounting accuracy is required to be within +/-1 nm.

In one embodiment, the emitting member 200 is a semiconductor laser. The light intensity of the light beam of the semiconductor laser should be as large and stable as possible. Semiconductor laser emitters, also known as laser diodes, are laser emitters that use semiconductor materials as the working substance. Due to the difference in material structure, the specific process of generating laser light in different types is more specific. Common working substances are gallium arsenide (GaAs), cadmium sulfide (CdS), indium phosphide (InP), zinc sulfide (ZnS), and the like. The excitation mode includes three modes of electric injection, electron beam excitation and optical pumping. Semiconductor laser devices can be classified into homojunctions, single heterojunctions, double heterojunctions, and the like. Most of the homojunction lasers and Shan Yizhi junction lasers are pulse devices at room temperature, and the double-heterojunction laser can continuously work at room temperature. In other embodiments, the emitter 200 may be other types of emitters 200, or any other laser capable of ensuring the intensity and stability of the light beam.

Optionally, the emitting member 200 is a he — ne gas laser. Helium-neon lasers (Helium-neon gas lasers) typically operate in the visible light range, with 1.1523 μm and 3.3913 μm being additional examples. The power is generally about several milliwatts and the light is continuously emitted. Because of the convenience of manufacture, the lower price, reliable, so use more. Due to good monochromaticity, the coherence length can reach tens of meters and hundreds of meters. The helium-neon laser is divided into an inner cavity type, an outer cavity type and a half inner cavity type. Helium-neon mixed gas is filled in a discharge capillary of the He-Ne laser, and the gas pressure ratio is 5:1 to 10:1, the total pressure is 133.3-266.6 Pa (1-2 mm Hg). The laser working substance is neon which plays a role of stimulated radiation, and helium which is an auxiliary gas plays a role of energy transfer. The anode of the discharge vessel is typically made of a tungsten rod and the cathode is an aluminum or molybdenum cylinder. The discharge tube and the resonant cavity are fixed together in the inner cavity type He-Ne laser, the use is convenient, the resonant cavity does not need to be adjusted, a window sheet is not arranged between the reflector and the discharge tube for separation, the light energy loss is less, but the laser output is reduced due to the fact that the tube is heated and deformed due to discharge, the stability is poor, and the longer the tube is, the worse the stability is. In contrast, in the external cavity type he-ne laser, the discharge tube is completely separated from the resonant cavity, and two window sheets with a special inclination angle are fixed at two ends of the discharge tube. The reflector is arranged outside the window sheet and can be adjusted to meet the requirements of various experiments. The cavity is less affected by temperature, and the output laser is linearly polarized. The disadvantage is that the use is inconvenient, the included angle between the window and the axis is not easy to be adjusted, and the output power is influenced. One reflector in the resonant cavity of the half-inner cavity type He-Ne laser is fixed with the discharge tube, and the other reflector is separated from the discharge tube. The helium-neon laser has the advantages of easy control of output power and laser frequency stability, good monochromaticity, coherence and directivity of light beams, long service life, simple structure and low price, is widely applied to industrial and agricultural production, scientific research, teaching and other aspects, and especially plays an important role in the aspects of precision metering, collimation guiding, flow rate and flow measurement of fluid and holography and the like.

In one embodiment, the dut 500 is a wafer. After the wafer is coated, stress monitoring is carried out on a film on the wafer through laser.

In one embodiment, the refractive index of the filter 300 is greater than or equal to 95%. The influence of the refraction of the laser light by the filter 300 is prevented from being reduced. Further ensuring the accuracy and reliability of the film stress device.

In one embodiment, a mounting frame is disposed in the mounting cavity 110, and the light filter 300 is disposed on the mounting frame. The mounting bracket can further ensure the stable installation of the optical filter 300. The optical filter 300 is detachably mounted on the mounting bracket. The mounting bracket is detachably disposed in the mounting cavity 110. Further ensuring the utility of the thin film stress monitoring device 10.

In one embodiment, the receiving member 400 is an optical position sensitive detector. The photoelectric position sensitive detector is a high-precision photoelectric detector. The relation between the speed of light and time is used to reach the aim of sensitivity to the position of light point in the period. The photodetector is a photoelectric device sensitive to the position of the light spot incident on the light-sensitive surface, whose output signal is related to the position of the light spot on the light-sensitive surface. It is a photoelectric position sensitive detector based on transverse photoelectric effect. Besides the positioning performance of the photodiode array and the charge coupled device, the photoelectric conversion device has the characteristics of high sensitivity, high resolution, high response speed, simple circuit configuration and the like. The development trend of the photoelectric detector is multifunctional integration such as high resolution, high linearity, fast response speed, signal acquisition and processing and the like.

In one embodiment, the film stress monitoring apparatus 10 further comprises a data collecting element 600, the data collecting element 600 is electrically connected to the receiving element 400, the receiving element 400 can generate laser information after receiving the refracted laser, and the data collecting element 600 is used for storing the laser information. The data acquisition component 600 is a multifunctional data acquisition card. The multifunctional data acquisition card can store laser information and convert the laser signal received by the receiving part 400 into a digital signal.

In one embodiment, the thin film stress monitoring apparatus 10 further includes an information processing component 700, the information processing component 700 is electrically connected to the data acquisition component 600, and the information processing component 700 can convert the laser information into digital information. The information processing part 700 is a computer, and the computer processes digital signals in the multifunctional data acquisition card and displays the film stress, so that the film stress is more visual.

A method of using a thin film stress monitoring device 10, comprising the steps of:

starting the emitting element 200 and adjusting the receiving element 400 to receive the laser refracted by the filter element 300 to obtain initial laser information;

coating the piece 500 to be tested, wherein the laser emitted by the emitting piece 200 passes through the filtering piece 300 and irradiates on the coating, and is reflected on the filtering piece 300, and after the filtering piece 300 refracts the reflected laser, the refracted laser is perceived by the receiving piece 400 to obtain a coating laser signal;

the information processing unit 700 compares the initial laser signal and the plating laser signal to obtain stress information.

The emitting member 200 is disposed in the mounting cavity 110 of the mounting member 100 and is located on one side inner wall of the mounting cavity 110. The receiving member 400 is disposed on the same side of the inner wall where the launching member 200 is installed. The to-be-tested member 500 is also disposed in the installation cavity 110 at an inner wall of the side opposite to the emitting member 200 and within the laser irradiation range of the emitting member 200. The filter 300 is further disposed between the emitter 200 and the test piece 500. The initial laser signal of the laser is recorded before the emitting part 200 emits the laser, the laser emitted by the emitting part 200 can penetrate through the filtering optical part 300 to reach the part 500 to be tested, then the part 500 to be tested reflects the laser, and the reflected laser penetrates through the filtering optical part 300 to be received by the receiving part 400, so that the film coating laser signal of the part 500 to be tested after film coating is obtained. And comparing the initial laser signal with the film coating laser signal to obtain stress information. The film stress monitoring device 10 is simple in structure and convenient and fast to operate, stress information is obtained by comparing laser information, the film stress monitoring device is more accurate and reliable, and measurement deviation caused by complex structure is avoided.

In one embodiment, the launch launcher 200, previously comprises:

the elastic modulus, poisson's ratio, thickness, length, reflection optical path length of the device under test 500, and sampling interval time of the receiving part 400 are set on the information processing part 700.

And calculating the film stress according to the information.

In one embodiment, launching the launcher 200, previously further comprises:

measuring a central point of one side inner wall of the installation cavity 110;

mounting the launcher 200 on the center point;

placing the receiving element 400 against the launching element 200;

arranging the piece 500 to be tested corresponding to the emitting piece 200, wherein the laser emitted by the emitting piece 200 can irradiate on the piece 500 to be tested;

the installation the filter 300 is located the transmission piece 200 with between 500 to be tested, so that laser can pass the filter 300 reaches on 500 to be tested, the laser that 500 to be tested reflects can pass the filter 300 reaches on receiving the piece 400.

According to the position of the emitting piece 200, other components are installed by taking the position as a base point, so that the installation reliability and convenience of the film stress monitoring device 10 are guaranteed, and the accuracy of the monitoring result is further guaranteed.

In one embodiment, the information processing unit 700 compares the initial laser signal and the coating laser signal to obtain the stress information, and then comprises:

finishing film coating, closing the emitting piece 200, the receiving piece 400 and the information processing piece 700, and finishing stress detection; or

And finishing the coating, closing the emitting element 200, the receiving element 400 and the information processing element 700 after a period of finishing time, and finishing the stress detection.

In the description of the present invention, it is to be understood that the terms "center", "longitudinal", "lateral", "length", "width", "thickness", "upper", "lower", "front", "rear", "left", "right", "vertical", "horizontal", "top", "bottom", "inner", "outer", "clockwise", "counterclockwise", "axial", "radial", "circumferential", and the like, indicate the orientation or positional relationship based on the orientation or positional relationship shown in the drawings, and are only for convenience of description and simplicity of description, and do not indicate or imply that the device or element referred to must have a particular orientation, be constructed and operated in a particular orientation, and therefore, should not be construed as limiting the present invention.

Furthermore, the terms "first", "second" and "first" are used for descriptive purposes only and are not to be construed as indicating or implying relative importance or to implicitly indicate the number of technical features indicated. Thus, a feature defined as "first" or "second" may explicitly or implicitly include at least one such feature. In the description of the present invention, "a plurality" means at least two, e.g., two, three, etc., unless specifically limited otherwise.

In the present invention, unless otherwise expressly stated or limited, the terms "mounted," "connected," and "fixed" are to be construed broadly and may, for example, be fixedly connected, detachably connected, or integrally formed; can be mechanically or electrically connected; they may be directly connected or indirectly connected through intervening media, or they may be connected internally or in any other suitable relationship, unless expressly stated otherwise. The specific meaning of the above terms in the present invention can be understood according to specific situations by those skilled in the art.

In the present application, unless expressly stated or limited otherwise, the first feature may be directly on or directly under the second feature or indirectly via intermediate members. Also, a first feature "on," "above," and "over" a second feature may be directly on or obliquely above the second feature, or simply mean that the first feature is at a higher level than the second feature. A first feature being "under," "below," and "beneath" a second feature may be directly under or obliquely under the first feature, or may simply mean that the first feature is at a lesser elevation than the second feature.

It will be understood that when an element is referred to as being "secured to" or "disposed on" another element, it can be directly on the other element or intervening elements may also be present. When an element is referred to as being "connected" to another element, it can be directly connected to the other element or intervening elements may also be present. The terms "vertical," "horizontal," "upper," "lower," "left," "right," and the like as used herein are for illustrative purposes only and do not denote a unique embodiment.

The technical features of the embodiments described above may be arbitrarily combined, and for the sake of brevity, all possible combinations of the technical features in the embodiments described above are not described, but should be considered as being within the scope of the present specification as long as there is no contradiction between the combinations of the technical features.

The above-mentioned embodiments only represent some embodiments of the present invention, and the description thereof is specific and detailed, but not to be construed as limiting the scope of the present invention. It should be noted that, for those skilled in the art, without departing from the spirit of the present invention, several variations and modifications can be made, which are within the scope of the present invention. Therefore, the protection scope of the present invention should be subject to the appended claims.

Claims (10)

1. A thin film stress monitoring device, comprising:

the mounting piece is internally provided with a mounting cavity;

the emitting piece is arranged on the inner wall of one side of the installation cavity, is used for emitting laser, and is used for arranging a piece to be measured on the inner wall of the other side opposite to the emitting piece;

the optical filtering piece is arranged between the emitting piece and the piece to be detected, the laser emitted by the emitting piece can pass through the optical filtering piece to the piece to be detected, the piece to be detected can reflect the laser to the optical filtering piece, and the optical filtering piece can refract the laser to form refracted laser;

a receiving part disposed on an inner wall of a side on which the emitting part is mounted, the receiving part capable of receiving the refracted laser light.

2. The film stress monitoring device according to claim 1, wherein the laser emitted by the emitting member can vertically enter the optical filter, and the laser reflected by the member to be measured enters the optical filter at an acute angle or an obtuse angle.

3. The thin film stress monitoring device of claim 1, wherein the refractive index of the optical filter is greater than or equal to 95%.

4. The film stress monitoring device of claim 1, further comprising a data acquisition element, wherein the data acquisition element is electrically connected to the receiving element, the receiving element is capable of generating laser information after receiving the refracted laser light, and the data acquisition element is configured to store the laser information.

5. The thin film stress monitoring device of claim 4, further comprising an information processing component, wherein the information processing component is electrically connected with the data acquisition component, and the information processing component can convert the laser information into digital information.

6. The thin film stress monitoring device of claim 5, wherein the collecting element is a multifunctional data collecting card; and/or

The information processing part is a computer.

7. The film stress monitoring device according to any one of claims 1 to 6, wherein the emitter is mounted on a central point of an inner wall of one side of the mounting cavity, and the receiver is disposed on one side of the emitter and is disposed in close proximity to the emitter.

8. The membrane stress monitoring device of any one of claims 1 to 6, further comprising a mounting bracket disposed within the mounting cavity, the filter being mounted on the mounting bracket.

9. The thin film stress monitoring device of claim 8, wherein the mounting bracket is removably disposed within the mounting cavity; and/or

The optical filter is detachably mounted on the mounting bracket.

10. The thin film stress monitoring device according to any one of claims 1 to 6, wherein the emitting member is a semiconductor laser; and/or

The receiving piece is a photoelectric position sensitive detector.

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