CN218385232U

CN218385232U - High-power field effect transistor

Info

Publication number: CN218385232U
Application number: CN202222796315.4U
Authority: CN
Inventors: 何波; 孙德吉; 王家俊; 刘定涛
Original assignee: Shenzhen Zhinan Technology Co ltd
Current assignee: Shenzhen Zhinan Technology Co ltd
Priority date: 2022-10-21
Filing date: 2022-10-21
Publication date: 2023-01-24
Anticipated expiration: 2032-10-21

Abstract

The utility model discloses a high-power field effect transistor relates to field effect transistor technical field. Including the field effect transistor body, the bottom of field effect transistor body is equipped with the bottom plate, the top of field effect transistor body is equipped with the heating panel, the top of going up the heating panel evenly is equipped with the fin, the both sides of going up the heating panel all are connected with the otic placode, it is outside that field effect transistor body both sides are extended to the both sides of bottom plate, the top both sides of bottom plate all connect the otic placode through coupling mechanism, including the field effect transistor body, the bottom of field effect transistor body is equipped with the bottom plate, the top of field effect transistor body is equipped with the heating panel, the top of going up the heating panel evenly is equipped with the fin, the both sides of going up the heating panel all are connected with the otic placode, the both sides of bottom plate extend field effect transistor body both sides outsidely, the top both sides of bottom plate all connect the otic placode through coupling mechanism. The high-power field effect transistor has the advantages that the radiating performance of the field effect transistor body can be enhanced through the matching of the upper radiating plate and the upper radiating fin by the bottom plate, meanwhile, the cost is low, and the bottom plate and the upper radiating plate are convenient to disassemble and assemble on the field effect transistor body.

Description

High-power field effect transistor

Technical Field

The utility model relates to a field effect transistor technical field specifically is a high-power field effect transistor.

Background

The field effect transistor is a kind of semiconductor device which controls the current of the output loop by controlling the electric field effect of the input loop, and the semiconductor device is conductive by majority carriers, and has the advantages of high input resistance, low noise, low power consumption, large dynamic range and easy integration, etc. it can be used as variable resistance, constant current source and electronic switch.

The miniature heat dissipation unit of the high-power field effect transistor with the publication number of CN213340352U comprises a frame box, wherein two side surfaces of the frame box are fixedly connected with two mounting plates respectively, a connecting plate is fixedly connected inside the frame box, a heat dissipation fin is fixedly connected to the upper surface of the connecting plate, a plurality of placing seats are fixedly connected to the upper surface of the heat dissipation fin, a pipe element is connected to each of the placing seats, a plurality of groups of mounting holes are correspondingly formed in the two side surfaces of the frame box, a heat conduction pipe is connected to the inside of each group of mounting holes, and the heat conduction pipes are attached to the upper surface of the heat dissipation fin; after the placing seat is connected with the pipe element, the heat pipes on the two side faces of the placing seat and the heat conducting pipes on the two side faces of the pipe element and the heat radiating fins connected with the bottom of the placing seat are used for effectively radiating heat, the situation that the field effect tubes cannot be evacuated in time due to a large amount of high temperature in the working process of the field effect tubes is avoided, the field effect tubes are installed in the frame box and are radiated by the fan, the cost is high, and the occupied space is relatively large.

SUMMERY OF THE UTILITY MODEL

The utility model provides a high-power field effect transistor to solve the problem in the background art.

In order to achieve the above object, the utility model provides a following technical scheme: the utility model provides a high-power field effect transistor, includes the field effect transistor body, the bottom of field effect transistor body is equipped with the bottom plate, the top of field effect transistor body is equipped with the heating panel, the top of going up the heating panel evenly is equipped with the fin, the both sides of going up the heating panel all are connected with the otic placode, the both sides of bottom plate extend field effect transistor body both sides outside, the top both sides of bottom plate all connect the otic placode through coupling mechanism.

Further, coupling mechanism includes two kellies, the card is protruding and the card hole, the card hole has been seted up at the top of otic placode, the top of field effect transistor body is equipped with the kelle, the top integrated into one piece of kelle has the card protruding, the card protruding can pass the card hole and block the post card hole.

Furthermore, through holes are uniformly formed in the surface of the upper radiating fin.

Furthermore, the material of the attaching plate is aluminum.

Furthermore, lower radiating fins are uniformly arranged at the bottom of the attaching plate.

Compared with the prior art, the utility model provides a high-power field effect transistor possesses following beneficial effect: the high-power field effect transistor has the advantages that the radiating performance of the field effect transistor body can be enhanced through the matching of the upper radiating plate and the upper radiating fin by the bottom plate, meanwhile, the cost is low, and the bottom plate and the upper radiating plate are convenient to disassemble and assemble on the field effect transistor body.

Drawings

Fig. 1 is a schematic structural view of the present invention;

fig. 2 is a schematic structural view of the bottom plate of the present invention;

fig. 3 is an enlarged schematic view of the point a of the present invention.

In the figure: 1. a field effect transistor body; 2. a base plate; 3. an upper heat dissipation plate; 4. an upper heat sink; 5. an ear plate; 6. a clamping rod; 7. clamping convex; 8. a clamping hole; 9. a through hole; 10. an extension plate; 11. laminating the plates; 12. and a lower heat sink.

Detailed Description

The technical solutions in the embodiments of the present invention will be described clearly and completely with reference to the accompanying drawings in the embodiments of the present invention, and it is obvious that the described embodiments are only some embodiments of the present invention, not all embodiments. Based on the embodiments in the present invention, all other embodiments obtained by a person skilled in the art without creative work belong to the protection scope of the present invention.

Please refer to fig. 1-3, the utility model discloses a high-power field effect transistor, including field effect transistor body 1, the bottom of field effect transistor body 1 is equipped with bottom plate 2, the top of field effect transistor body 1 is equipped with heating panel 3, the top of going up heating panel 3 evenly is equipped with fin 4, the both sides of going up heating panel 3 all are connected with otic placode 5, the both sides of bottom plate 2 extend field effect transistor body 1 both sides outside, the top both sides of bottom plate 2 all connect otic placode 5 through coupling mechanism.

Specifically, coupling mechanism includes two kellies 6, the protruding 7 of card and card hole 8, card hole 8 has been seted up at the top of otic placode 5, the top of field effect transistor body 1 is equipped with kelly 6, the top integrated into one piece of kelly 6 has the protruding 7 of card, protruding 7 of card can pass card hole 8 and block post card hole 8.

In this embodiment, kelly 6 adopts elastic metal to support, has elastic deformation ability, and field effect transistor body 1 is glued to bottom plate 2 accessible heat-conducting glue, through the protruding 7 of card and the cooperation of calorie hole 8 between bottom plate 2 and the last heating panel 3, conveniently connects fixedly and demolishs.

Specifically, through holes 9 are uniformly formed in the surface of the upper heat sink 4.

In the present embodiment, the through holes 9 can reduce the weight of the upper fin 4 and promote heat exchange between the upper fin 4 and air.

Specifically, the bottom plate 2 comprises a joint plate 11 and an extension plate 10, the two sides of the joint plate 11 are connected with the extension plate 10 through inclined planes, and the height of the joint plate 11 is higher than that of the extension plate 10.

In this embodiment, the structure is configured such that the middle portion of the bottom plate 2 is arched upward, and the attachment plate 11 is located between the two extension plates 10 to form an air flow groove, which can promote heat dissipation.

Specifically, the material of attaching plate 11 is aluminium, attaching plate 11's bottom evenly is equipped with lower fin 12.

In this embodiment, the lower heat dissipation fins 12 can play a role in improving the heat dissipation efficiency.

In conclusion, the high-power field effect transistor has the advantages that the bottom plate 2 is matched with the upper heat dissipation plate 3 and the upper heat dissipation plate 4, the heat dissipation performance of the field effect transistor body 1 can be enhanced, the cost is low, and the bottom plate 2 and the upper heat dissipation plate 3 are convenient to disassemble and assemble on the field effect transistor body 1.

Although embodiments of the present invention have been shown and described, it will be appreciated by those skilled in the art that various changes, modifications, substitutions and alterations can be made in these embodiments without departing from the principles and spirit of the invention, the scope of which is defined in the appended claims and their equivalents.

Claims

1. A high-power field effect transistor comprises a field effect transistor body (1), and is characterized in that: the bottom of field effect transistor body (1) is equipped with bottom plate (2), the top of field effect transistor body (1) is equipped with heating panel (3), the top of going up heating panel (3) evenly is equipped with fin (4), the both sides of going up heating panel (3) all are connected with otic placode (5), the both sides of bottom plate (2) are extended field effect transistor body (1) both sides outside, the top both sides of bottom plate (2) all connect otic placode (5) through coupling mechanism.

2. The high power fet of claim 1, wherein: coupling mechanism includes two kellies (6), blocks protruding (7) and card hole (8), card hole (8) have been seted up at the top of otic placode (5), the top of field effect transistor body (1) is equipped with kelly (6), the top integrated into one piece of kelly (6) has the protruding (7) of card, protruding (7) of card can pass card hole (8) and block post card hole (8).

3. The high power fet of claim 1, wherein: through holes (9) are uniformly formed in the surface of the upper radiating fin (4).

4. The high power fet of claim 1, wherein: the bottom plate (2) including laminating board (11) and extension board (10), the both sides of laminating board (11) are passed through the inclined plane and are connected extension board (10), the height of laminating board (11) is higher than extension board (10).

5. The high power fet of claim 4, wherein: the jointing plate (11) is made of aluminum.

6. The high power fet of claim 5, wherein: lower radiating fins (12) are uniformly arranged at the bottom of the attaching plate (11).