CN218345584U

CN218345584U - Furnace bottom structure for reducing power consumption of single crystal furnace and single crystal furnace with structure

Info

Publication number: CN218345584U
Application number: CN202222250782.7U
Authority: CN
Inventors: 李鹏飞; 许建; 王建平; 王林
Original assignee: Inner Mongolia Zhonghuan Crystal Materials Co Ltd
Current assignee: Inner Mongolia Zhonghuan Crystal Materials Co Ltd
Priority date: 2022-08-25
Filing date: 2022-08-25
Publication date: 2023-01-20
Anticipated expiration: 2032-08-25

Abstract

The utility model provides a reduce furnace bottom structure of single crystal growing furnace consumption and be equipped with the single crystal growing furnace of this structure, including solidification felt heat preservation, solidification felt heat preservation is laid in the single crystal growing furnace bottom, solidification felt heat preservation top sets up the insulating layer, the inside vacuum cavity that is equipped with of insulating layer for block heat transfer. The utility model also provides a single crystal furnace with this furnace bottom structure. The beneficial effects of the utility model are that improved the heat preservation effect at single crystal growing furnace stove bottom, reduced the consumption of single crystal growing furnace, reduced the manufacturing cost of monocrystalline silicon.

Description

Furnace bottom structure for reducing power consumption of single crystal furnace and single crystal furnace with structure

Technical Field

The utility model belongs to the technical field of single crystal growing furnace, especially, relate to a reduce furnace bottom structure of single crystal growing furnace consumption and be equipped with the single crystal growing furnace of this structure.

Background

The Czochralski method for growing single crystal silicon is the most widely applied technology for producing single crystal silicon at present, and a single crystal furnace is equipment for melting polycrystalline materials such as polycrystalline silicon and the like by a graphite heater in an inert gas (mainly nitrogen and helium) environment and growing dislocation-free single crystals by the Czochralski method. With the market competition increasing, it is very necessary to reduce the production cost of single crystal silicon in order to improve the price advantage of single crystal. In the production process of monocrystalline silicon, the combustion cost is relatively high, and the reduction of the power consumption of the monocrystalline furnace is one of the main ways for reducing the production cost of the monocrystalline silicon.

In the prior art, as shown in fig. 1, a solidified felt is laid at the bottom of a single crystal furnace to serve as a heat-insulating layer, and because the heat conductivity and the volume density of the solidified felt are high, heat is easy to dissipate from the bottom of the single crystal furnace.

SUMMERY OF THE UTILITY MODEL

In order to solve the technical problem, the utility model provides a furnace bottom structure for reducing the power consumption of a single crystal furnace, which effectively solves the problem that the heat at the bottom of the single crystal furnace is easy to dissipate and eliminate, and overcomes the defects of the prior art.

The utility model adopts the technical proposal that: the utility model provides a furnace bottom structure of reduction single crystal growing furnace consumption, includes solidification felt heat preservation, solidification felt heat preservation is laid in single crystal growing furnace bottom, solidification felt heat preservation top sets up the insulating layer, the inside vacuum cavity that is equipped with of insulating layer for block heat transfer.

Furthermore, the vacuum cavities are distributed in the heat insulation layer uniformly, and the number of the vacuum cavities is multiple.

Further, the shape of the vacuum cavity is spherical or ellipsoidal.

Furthermore, the heat-insulating layer is provided with a plurality of heat-insulating layers, and the edges of the upper heat-insulating layer and the lower heat-insulating layer are aligned.

Further, the thickness of the multiple layers of thermal insulation is the same.

Further, the top of the heat insulation layer is provided with a concave cavity, the bottom of the heat insulation layer is provided with a concave cavity, the concave cavity and the convex cavity are arranged at intervals, and the concave cavity of the upper heat insulation layer and the concave cavity of the lower heat insulation layer form the vacuum cavity.

Furthermore, the top of the heat insulation layer positioned at the top of the heat insulation layer is not provided with the concave cavity.

Furthermore, the upper concave cavity is not arranged at the bottom of the heat insulation layer positioned at the bottom of the heat insulation layer.

Further, the thickness of the solidified felt heat-insulating layer is the same as that of the heat-insulating layer.

The utility model also provides a single crystal growing furnace, the bottom sets up as above arbitrary the furnace bottom structure of reduction single crystal growing furnace consumption.

The utility model has the advantages and positive effects be: by adopting the technical scheme, the heat preservation effect of the bottom of the single crystal furnace is improved, the power consumption of the single crystal furnace is reduced, and the production cost of the single crystal silicon is reduced.

Drawings

FIG. 1 is a schematic view of a prior art hearth construction.

FIG. 2 is a schematic view of a furnace bottom structure for reducing power consumption of a single crystal furnace according to an embodiment of the present invention.

FIG. 3 is a partial enlarged view of a thermal insulating layer of a furnace bottom structure for reducing the power consumption of a single crystal furnace.

In the figure:

10. a solidified felt heat-insulating layer 20, a heat-insulating layer 21 and heat-insulating layers

22. Upper concave cavity 23, lower concave cavity 30 and single crystal furnace bottom

Detailed Description

The embodiment of the utility model provides a reduce furnace bottom structure of single crystal growing furnace consumption, the following embodiment of the utility model is explained with the attached drawing.

As shown in FIGS. 2-3, the embodiment of the utility model provides a reduce furnace bottom structure of single crystal growing furnace consumption, including solidification felt heat preservation 10 and insulating layer 20, solidification felt heat preservation 10 is laid at single crystal growing furnace bottom 30 for keep the temperature in single crystal growing furnace thermal field. However, because the thermal conductivity and the volume density of the cured felt are high, heat is easily lost, and therefore, a heat insulation layer 20 is laid above the cured felt heat insulation layer 10 to prevent the heat from being lost. Because the operating temperature of the single crystal furnace is higher, the material of the heat-insulating layer 20 is heat-insulating fiber with high temperature resistance of 2000 ℃, and meanwhile, the heat conductivity of the heat-insulating layer 20 needs to be lower than that of the curing felt. Because the heat insulation layer 20 is positioned at the bottom of the single crystal furnace, the whole thermal field structure needs to be stably supported, and the compression ratio of the heat insulation layer 20 needs to be at least equal to that of the solidified felt, so that the unstable sinking support of the furnace bottom is avoided. In order to enhance the heat insulation effect of the heat insulation layer 20, a vacuum cavity is arranged in the heat insulation layer 20, and the vacuum cavity can further block heat transfer due to no heat conducting medium, so that heat loss is reduced.

Specifically, the number of the vacuum chambers may be set to be plural, and in order to keep the temperature of the whole single crystal furnace bottom 30 consistent, the plural vacuum chambers are uniformly distributed in the heat insulation layer 20.

Specifically, the shape of the vacuum cavity is spherical or ellipsoidal.

Specifically, the heat insulation layer 20 is provided with a plurality of heat insulation layers 21, and the edges of the upper heat insulation layer 21 and the lower heat insulation layer 21 are aligned and adhered by using an adhesive. The heat insulation layer 20 has a layered structure, so that thermal stress generated after heating is easily counteracted, the overall strength can be improved, and the whole body cannot crack.

Preferably, the insulating layers 21 are of the same thickness. The insulating layer 21 is of the same thickness for ease of handling and adhesion.

Specifically, the top of the heat insulation layer 21 is provided with a lower concave cavity 23, the bottom of the heat insulation layer 21 is provided with an upper concave cavity 22, the upper concave cavity 22 and the lower concave cavity 23 are arranged at intervals, and the upper concave cavity 22 of the upper heat insulation layer 21 and the lower concave cavity 23 of the lower heat insulation layer 21 form a vacuum cavity. The multiple layers of heat insulation layers 21 are extruded and bonded in a vacuum environment, so that the vacuum cavity is kept in vacuum.

Specifically, in order to keep the thermal field structure on the upper portion of the thermal insulation layer 20 stable, the upper portion of the thermal insulation layer 20 is set to be a plane, and therefore, the concave cavity 23 is not arranged on the top of the thermal insulation layer 21 on the top of the thermal insulation layer 20, and the thermal insulation layer is of a plane structure.

Specifically, in order to firmly connect the heat insulating layer 20 and the cured felt insulating layer 10, the bottom of the heat insulating layer 20 is set to be a plane, and therefore, the bottom of the heat insulating layer 21 located at the bottom of the heat insulating layer 20 is not provided with the upper concave cavity 22 and has a plane structure.

Specifically, the thickness of the cured felt insulation layer 10 is the same as that of the thermal insulation layer 20. In order to enhance the heat preservation effect of the furnace bottom, reduce the usage amount of the high temperature resistant heat insulation fiber heat insulation layer 20, reduce the cost, and simultaneously, can carry out secondary utilization on the original furnace bottom heat preservation layer, and the thickness of the heat insulation layer 20 is the same as that of the solidified felt heat preservation layer 10.

Example (b): a furnace bottom structure for reducing the power consumption of a single crystal furnace comprises a solidified felt heat-insulating layer 10 and a heat-insulating layer 20. The solidified felt heat-insulating layer 10 is paved at the bottom of the single crystal furnace 30, and the heat-insulating layer 20 is paved at the top of the solidified felt heat-insulating layer 10. The sections of the solidified felt heat-insulating layer 10 and the heat-insulating layer 20 are both circular and have the same diameter, and the sections of the solidified felt heat-insulating layer and the heat-insulating layer are matched with the furnace bottom. The cured felt insulation layer 10 and the thermal insulation layer 20 have the same thickness. The insulation layer 20 is provided with a plurality of insulation sub-layers 21, the upper insulation sub-layer 21 is aligned with the lower insulation sub-layer 21 at the edge, and the plurality of insulation sub-layers 21 have the same thickness. The top of the heat insulation layer 21 is provided with a lower concave cavity 23, the bottom of the heat insulation layer 21 is provided with an upper concave cavity 22, the upper concave cavity 22 and the lower concave cavity 23 are in the same shape, the upper concave cavity 22 and the lower concave cavity 23 are arranged at intervals, and the upper concave cavity 22 of the upper heat insulation layer 21 and the lower concave cavity 23 of the lower heat insulation layer 21 form a vacuum cavity. The vacuum cavity is in an ellipsoid shape and is uniformly distributed in the heat insulation layer 20. The top of the heat insulation layer 21 on the top of the heat insulation layer 20 is not provided with the lower concave cavity 23 and has a plane structure. The bottom of the heat insulation layer 21 at the bottom of the heat insulation layer 20 is not provided with the upper concave cavity 22 and has a plane structure. The centers of the solidified felt heat-insulating layer 10 and the heat-insulating layer 20 are provided with through holes for passing through the crucible shaft, and the peripheries of the through holes are provided with electrode column mounting holes and air guide holes, which are the same as the prior art and are not described again

A single crystal furnace, a single crystal furnace bottom 30 is provided with the furnace bottom structure for reducing the power consumption of the single crystal furnace, the furnace bottom structure for reducing the power consumption of the single crystal furnace is arranged at the bottom of a protective disc pressing sheet, a crucible shaft is arranged at the center of the furnace bottom structure, and a main electrode column, a bottom electrode column and an air guide device are arranged around the crucible shaft. By using the furnace bottom structure, the power consumption of the single crystal furnace is reduced.

The utility model has the advantages and positive effects that:

through setting up insulating layer 20, block heat transfer, reduced the heat at single crystal stove bottom 30 and scatter and disappear, through setting up the vacuum cavity, further reduce heat-conducting medium, the effectual heat preservation effect that improves the single crystal stove bottom has guaranteed the operating temperature of thermal field structure to reduce the consumption of single crystal stove, reduced the manufacturing cost of monocrystalline silicon.

The embodiments of the present invention have been described in detail, but the description is only for the preferred embodiments of the present invention and should not be construed as limiting the scope of the present invention. The equivalent changes and improvements made according to the application scope of the present invention should be still included in the patent coverage of the present invention.

Claims

1. The utility model provides a reduce furnace bottom structure of single crystal growing furnace consumption, includes solidification felt heat preservation, solidification felt heat preservation is laid in single crystal growing furnace bottom, its characterized in that: the curing felt heat preservation top sets up the insulating layer, insulating layer inside is equipped with the vacuum cavity for block heat transfer.

2. The furnace bottom structure for reducing the power consumption of the single crystal furnace according to claim 1, characterized in that: the vacuum chambers are distributed in the heat insulation layer uniformly.

3. The furnace bottom structure for reducing the power consumption of the single crystal furnace according to claim 1 or 2, characterized in that: the shape of the vacuum cavity is spherical or ellipsoidal.

4. The furnace bottom structure for reducing the power consumption of the single crystal furnace according to claim 1, characterized in that: the heat insulation layer is provided with a plurality of heat insulation layers, and the edges of the upper heat insulation layer and the lower heat insulation layer are aligned.

5. The furnace bottom structure for reducing the power consumption of the single crystal furnace according to claim 4, characterized in that: the insulating layers are of the same thickness.

6. The furnace bottom structure for reducing the power consumption of the single crystal furnace according to claim 4, characterized in that: the vacuum cavity is formed by the upper concave cavity of the upper heat insulation layer and the lower concave cavity of the lower heat insulation layer.

7. The furnace bottom structure for reducing the power consumption of the single crystal furnace according to claim 6, characterized in that: the concave cavity is not arranged at the top of the heat insulation layer positioned at the top of the heat insulation layer.

8. The furnace bottom structure for reducing the power consumption of the single crystal furnace as claimed in claim 6, wherein: the upper concave cavity is not arranged at the bottom of the heat insulation layer positioned at the bottom of the heat insulation layer.

9. The furnace bottom structure for reducing the power consumption of the single crystal furnace according to claim 1, characterized in that: the thickness of the solidified felt heat-insulating layer is the same as that of the heat-insulating layer.

10. A single crystal furnace is characterized in that: the bottom of the single crystal furnace is provided with a furnace bottom structure for reducing the power consumption of the single crystal furnace according to any one of claims 1 to 9.