CN214612838U - Furnace bottom heat preservation assembly of single crystal furnace - Google Patents
Furnace bottom heat preservation assembly of single crystal furnace Download PDFInfo
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- CN214612838U CN214612838U CN202023110700.6U CN202023110700U CN214612838U CN 214612838 U CN214612838 U CN 214612838U CN 202023110700 U CN202023110700 U CN 202023110700U CN 214612838 U CN214612838 U CN 214612838U
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Abstract
The utility model relates to a furnace bottom heat preservation component of a single crystal furnace, which is provided with a heat preservation layer containing a graphite carbon felt layer, wherein a graphite lower shaft through hole and an electrode through hole which are respectively used for a graphite lower shaft and an electrode to pass are arranged on the heat preservation layer; and the graphite lower shaft through hole and the electrode through hole are respectively provided with an isolation sheath, and the graphite carbon felt can be isolated from the graphite lower shaft through hole and the electrode through hole by the isolation sheath. The isolating sheath isolates the part of the graphite carbon felt exposed in the graphite lower shaft through hole and the electrode through hole from the through hole, and silicon liquid and silicon steam cannot contact the graphite carbon felt through the through hole under the protection of the isolating sheath, so that the graphite carbon felt at the furnace bottom can be protected from being eroded by the silicon liquid and the silicon steam, the service life of the graphite carbon felt is prolonged, and the heat preservation effect of the furnace bottom is improved; in the process of drawing the single crystal silicon rod by using the granular silicon raw material, the thermal field heat preservation performance is improved, the single crystal quality is improved, and the cost is reduced.
Description
Technical Field
The utility model relates to a single crystal growing furnace stove heat preservation subassembly technical field especially relates to a single crystal growing furnace stove bottom heat preservation subassembly.
Background
Single crystal silicon, also called silicon single crystal, is a semiconductor material. The single crystal furnace is a device for growing dislocation-free monocrystalline silicon by a Czochralski method in an inert gas (mainly nitrogen and helium) environment by melting polycrystalline materials such as polycrystalline silicon and the like by a heater. The thermal field system of the single crystal furnace determines the temperature of the growth of the single crystal, and the thermal field with proper temperature distribution can grow the high-quality single crystal. The single crystal is easy to become polycrystal or can not be seeded at all due to the thermal field with improper temperature distribution; or, although capable of growing single crystals, of poor quality, with dislocations and other structural defects. Therefore, finding better thermal field conditions and configuring the optimal thermal field are very important Czochralski single crystal process technology. The thermal field has poor thermal insulation performance, and crystal pulling is influenced to a certain degree, so that the power consumption and the production cost are increased.
The existing thermal field system generally comprises furnace body top heat preservation, upper, middle and lower heat preservation and furnace body bottom heat preservation. The heat-insulating layer of the furnace bottom heat-insulating assembly usually comprises heat-insulating materials such as a graphite laminated layer, a graphite carbon felt layer, a graphite solidified felt layer and the like, and the heat-insulating layer is provided with a plurality of through holes which longitudinally penetrate through each layer and are used for accommodating the graphite lower shaft and the electrode of the single crystal furnace and allowing the graphite lower shaft and the electrode to penetrate through. The heat preservation effect of the furnace bottom heat preservation assembly directly influences the temperature gradient of the thermal field.
In order to reduce cost and improve efficiency, a silicon single crystal rod is generally drawn by using a granular silicon raw material in production. Besides low production cost, the granular silicon also has the advantage of high purity. And when the Czochralski single crystal is subjected to multiple charging, the silicon particles are spherical, have good fluidity, the circularity of more than 0.92 and the median diameter of about 2mm, and can be used for direct charging without crushing. However, when the granular silicon is added for many times, the phenomenon of hydrogen jump is easy to occur, silicon liquid formed after the powdery material in the granular silicon raw material is melted is silicon steam which is brought into the furnace bottom by the hydrogen jump and easily enters the graphite carbon felt at the furnace bottom from a through hole on the heat preservation component at the furnace bottom, so that the graphite carbon felt is aged, the heat preservation performance of the heat preservation component at the furnace bottom is deteriorated, the service life of a thermal field of the single crystal furnace is adversely affected, the single crystal pulling is affected to a certain extent, and the yield of the furnace platform is reduced.
SUMMERY OF THE UTILITY MODEL
An object of the utility model is to provide a single crystal growing furnace stove bottom heat preservation subassembly to solve the graphite carbon felt that the in-process silicon liquid of present single crystal growing furnace production monocrystalline silicon and silicon steam easily enter single crystal growing furnace stove bottom heat preservation subassembly, lead to the ageing technical problem of graphite carbon felt.
The utility model discloses the technical problem who solves can take following scheme to realize: a furnace bottom heat preservation assembly of a single crystal furnace is provided with a heat preservation layer containing a graphite carbon felt layer, and a graphite lower shaft through hole and an electrode through hole which are respectively used for a graphite lower shaft and an electrode to pass through are formed in the heat preservation layer; the method is characterized in that: the graphite lower shaft through hole and the electrode through hole are respectively provided with a first isolation sheath and a second isolation sheath, the first isolation sheath can isolate the graphite carbon felt from the graphite lower shaft through hole, and the second isolation sheath can isolate the graphite carbon felt from the electrode through hole.
Further: the first isolation sheath and the second isolation sheath cover the graphite carbon felt and are attached to the graphite carbon felt.
Further: the heat preservation layer of the furnace bottom heat preservation assembly sequentially comprises a graphite pressing sheet, a graphite heat preservation solidification felt, a graphite carbon felt and a graphite solidification felt from top to bottom.
Further: the first isolation sheath and the second isolation sheath are also attached to the graphite pressing sheet, the graphite heat preservation curing felt and the graphite curing felt.
Further: the outer side surfaces of the first isolation sheath and the second isolation sheath are attached to the graphite heat-preservation curing felt and the graphite carbon felt.
Further: the upper surfaces of the first isolation sheath and the second isolation sheath are attached to the graphite pressing sheet, and the lower surfaces of the first isolation sheath and the second isolation sheath are attached to the graphite curing felt.
Further: the first isolation sheath and the second isolation sheath are in a hollow cylindrical shape.
Further: the first isolation sheath and the second isolation sheath are made of graphite.
The utility model discloses a single crystal growing furnace stove bottom heat preservation subassembly all installs the isolation sheath in graphite lower shaft runs through the through-hole and the electrode runs through the through-hole, and the isolation sheath can run through the through-hole with graphite lower shaft respectively and the electrode runs through the through-hole with graphite carbon felt isolated. The isolating sheath isolates the part of the graphite carbon felt exposed in the graphite lower shaft through hole and the electrode through hole from the through hole, and silicon liquid and silicon steam cannot enter the graphite carbon felt through the through hole to be contacted with the graphite carbon felt under the protection of the isolating sheath, so that the graphite carbon felt at the furnace bottom can be protected from being corroded by the silicon liquid and the silicon steam by using the isolating sheath, the service life of the graphite carbon felt is prolonged, and the heat preservation effect of the furnace bottom is improved; in the process of drawing the single crystal silicon rod by using the granular silicon raw material, the thermal field heat preservation performance is improved, the single crystal quality is improved, and the cost is reduced.
Drawings
In order to more clearly illustrate the technical solutions in the embodiments of the present invention, the drawings needed to be used in the description of the embodiments will be briefly described below, and it is obvious that the drawings in the following description are only some embodiments of the present invention, and it is obvious for those skilled in the art to obtain other drawings without creative efforts.
FIG. 1 is a schematic structural view of a single crystal furnace bottom heat preservation assembly of the embodiment of the invention when the single crystal furnace bottom heat preservation assembly is installed on the bottom of a single crystal furnace;
FIG. 2 is a cross-sectional view of the single crystal furnace bottom heat preservation assembly of the embodiment of the present invention when it is installed on the bottom of the single crystal furnace;
furnace bottom heat preservation subassembly: 1;
graphite tabletting: 111; and (3) graphite heat-preservation curing felt: 112, a first electrode; graphite carbon felt: 113; and (3) graphite curing felt: 114, and a carrier;
the graphite lower shaft penetrates through the through hole: 121, a carrier; the electrode penetrates through the through hole: 122;
a first insulating sheath: 131; a second insulating sheath: 132;
an air guide cylinder: 14;
graphite lower shaft: 2;
graphite electrode: 31; copper electrode: 32, a first step of removing the first layer;
a main heater: 41; a bottom heater: 42;
and (3) furnace bottom: 5.
Detailed Description
In order to clearly show the objects, technical solutions and advantages of the present invention, the following detailed description of the embodiments of the present invention will be further described with reference to the accompanying drawings.
Examples
Fig. 1 and 2 show a specific structural schematic diagram of the single crystal furnace bottom heat preservation assembly in this embodiment, as shown in fig. 1 and 2, the bottom heat preservation assembly 1 has a heat preservation layer containing multiple layers of heat preservation materials, the heat preservation layer at least contains a graphite carbon felt 113 layer, the heat preservation layer has a plurality of through holes penetrating through each layer along the longitudinal direction, and the through holes include a graphite lower shaft penetrating through hole 121 for the graphite lower shaft 2 to penetrate through and an electrode penetrating through hole 122 for the graphite electrode 31 and the copper electrode 32 to penetrate through.
A first isolation sheath 131 is installed in the graphite lower shaft through hole 121, a second isolation sheath 132 is installed in the electrode through hole 122, the first isolation sheath 131 can isolate the graphite carbon felt 113 from the graphite lower shaft through hole 121, and the second isolation sheath 132 isolates the graphite carbon felt 113 from the electrode through hole 122. Further, in the present embodiment, the first isolation sheath 131 and the second isolation sheath 132 are detachably and fixedly installed in the respective through holes.
Further, in order to ensure the sealing and isolating performance of the isolating sheath on the graphite carbon felt, the first isolating sheath 131 covers and completely adheres to the graphite carbon felt 113 which is positioned in the graphite lower shaft penetrating through hole 121 along the longitudinal direction; the second insulating sheath 132 longitudinally covers and completely conforms to the graphite carbon felt 113 within the electrode through-hole 122.
Further, the heat insulation layer of the furnace bottom heat insulation assembly 1 of this embodiment sequentially includes a graphite pressing sheet 111 layer, a graphite heat insulation curing felt 112 layer, a graphite carbon felt 113 layer, and a graphite curing felt 114 layer from top to bottom.
In order to further enhance the insulation sealing performance of the first insulation sheath 131 and the second insulation sheath 132, the first insulation sheath 131 and the second insulation sheath 132 are also attached to the graphite pressing sheet 111, the graphite insulation curing felt 112 and the graphite curing felt 114.
In this embodiment, a specific attaching form of the first insulating sheath 131, the second insulating sheath 132 and each layer of insulating material is shown in fig. 2, and the outer side surfaces of the first insulating sheath 131 and the second insulating sheath 132 are attached to the graphite insulating solidified felt 112 and the graphite carbon felt 113 which are located in the graphite lower shaft through hole 121 and the graphite electrode through hole 122. Furthermore, the upper surfaces of the first and second isolation sheaths 131 and 132 are attached to the lower surfaces of the graphite pressing sheet 111 at the positions of the graphite lower shaft through hole 121 and the electrode through hole 122, and the lower surfaces of the first and second isolation sheaths 131 and 132 are attached to the upper surfaces of the graphite solidification mat 114 at the positions of the graphite lower shaft through hole 121 and the electrode through hole 122.
In addition to the above attaching manner, the first insulating sheath 131 and the second insulating sheath 132 may also adopt other alternative attaching manners to insulate the graphite carbon felt, such as extending the first insulating sheath 131 and the second insulating sheath 132 along the entire longitudinal extent of the through hole, so that only the outer side surfaces thereof are attached to the surfaces of the graphite pressing sheet 111, the graphite heat preservation curing felt 112, the graphite carbon felt 113 and the graphite curing felt 114 in the through hole.
Further, in this embodiment, the first isolation sheath 131 and the second isolation sheath 132 are hollow cylinders. Further, the first insulating sheath 131 and the second insulating sheath 132 are made of graphite.
Further, the hearth insulating assembly 1 of the present embodiment further includes a gas cylinder 14 mounted on the graphite pressing plate 111.
The furnace bottom heat preservation assembly of the embodiment is arranged at the furnace bottom of a single crystal furnace as shown in figures 1 and 2 when in use, a graphite lower shaft of the single crystal furnace penetrates through a graphite lower shaft through hole of the heat preservation assembly and an isolation sheath positioned in the through hole, an assembled graphite electrode and a copper electrode penetrate through an electrode through hole of the heat preservation assembly and the isolation sheath positioned in the through hole, and a graphite carbon felt of the heat preservation assembly is isolated from the inner space of the graphite lower shaft through hole and the electrode through hole by the isolation sheath, so that silicon liquid and silicon steam are prevented from entering the graphite carbon felt through the graphite lower shaft through hole and the electrode through hole in the production process of the single crystal furnace.
The above description is only for the specific embodiments of the present invention, but the protection scope of the present invention is not limited thereto, and any person skilled in the art can easily think of the changes or substitutions within the technical scope of the present invention, and all should be covered within the protection scope of the present invention. Therefore, the protection scope of the present invention shall be subject to the protection scope of the claims.
Claims (8)
1. A furnace bottom heat preservation assembly of a single crystal furnace is provided with a heat preservation layer containing a graphite carbon felt (113) layer, and a graphite lower shaft through hole (121) and an electrode through hole (122) which are respectively used for a graphite lower shaft and an electrode to pass through are formed in the heat preservation layer;
the method is characterized in that: a first isolation sheath (131) and a second isolation sheath (132) are respectively arranged in the graphite lower shaft through hole (121) and the electrode through hole (122), the graphite carbon felt (113) can be isolated from the graphite lower shaft through hole (121) by the first isolation sheath (131), and the graphite carbon felt (113) can be isolated from the electrode through hole (122) by the second isolation sheath (132).
2. The single crystal furnace hearth heat preservation assembly of claim 1, wherein: the first isolation sheath (131) and the second isolation sheath (132) cover and are attached to the graphite carbon felt (113).
3. The single crystal furnace hearth heat preservation assembly of claim 2, wherein: the heat preservation layer of the furnace bottom heat preservation assembly (1) sequentially comprises a graphite pressing sheet (111), a graphite heat preservation solidification felt (112), a graphite carbon felt (113) and a graphite solidification felt (114) from top to bottom.
4. The single crystal furnace hearth heat preservation assembly of claim 3, wherein: the first isolation sheath (131) and the second isolation sheath (132) are also attached to the graphite pressing sheet (111), the graphite heat-preservation curing felt (112) and the graphite curing felt (114).
5. The single crystal furnace hearth heat preservation assembly of claim 4, wherein: the outer side surfaces of the first isolation sheath (131) and the second isolation sheath (132) are attached to the graphite heat-preservation curing felt (112) and the graphite carbon felt (113).
6. The single crystal furnace hearth heat preservation assembly of claim 5, wherein: the upper surfaces of the first isolation sheath (131) and the second isolation sheath (132) are attached to the graphite pressing sheet (111), and the lower surfaces of the first isolation sheath and the second isolation sheath are attached to the graphite curing felt (114).
7. The single crystal furnace hearth heat preservation assembly of claim 1, wherein: the first isolation sheath (131) and the second isolation sheath (132) are in a hollow cylindrical shape.
8. The single crystal furnace hearth heat preservation assembly of claim 1, wherein: the first isolation sheath (131) and the second isolation sheath (132) are made of graphite.
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| Application Number | Priority Date | Filing Date | Title |
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| CN202023110700.6U CN214612838U (en) | 2020-12-22 | 2020-12-22 | Furnace bottom heat preservation assembly of single crystal furnace |
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| CN202023110700.6U CN214612838U (en) | 2020-12-22 | 2020-12-22 | Furnace bottom heat preservation assembly of single crystal furnace |
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Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN115506033A (en) * | 2022-09-28 | 2022-12-23 | 乌海市京运通新材料科技有限公司 | Thermal field centering structure and centering method of single crystal furnace |
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2020
- 2020-12-22 CN CN202023110700.6U patent/CN214612838U/en active Active
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN115506033A (en) * | 2022-09-28 | 2022-12-23 | 乌海市京运通新材料科技有限公司 | Thermal field centering structure and centering method of single crystal furnace |
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Address after: 010070 north of Sunshine Street and east of Gongnong Road, ShaErQin Town, Ruyi Industrial Park, Hohhot, Inner Mongolia Autonomous Region Patentee after: Huayao Photoelectric Technology Co.,Ltd. Address before: 010010 3008-1, main building of Shentu center, open street, Ruyi Industrial Park, Hohhot, Inner Mongolia Autonomous Region Patentee before: Inner Mongolia Huayao Photoelectric Technology Co.,Ltd. |
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Address after: 010070 north of Sunshine Street and east of Gongnong Road, ShaErQin Town, Ruyi Industrial Park, Hohhot, Inner Mongolia Autonomous Region Patentee after: Huayao Optoelectronics Technology Co.,Ltd. Address before: 010070 north of Sunshine Street and east of Gongnong Road, ShaErQin Town, Ruyi Industrial Park, Hohhot, Inner Mongolia Autonomous Region Patentee before: Huayao Photoelectric Technology Co.,Ltd. |