CN115506033A - Thermal field centering structure and centering method of single crystal furnace - Google Patents
Thermal field centering structure and centering method of single crystal furnace Download PDFInfo
- Publication number
- CN115506033A CN115506033A CN202211190131.1A CN202211190131A CN115506033A CN 115506033 A CN115506033 A CN 115506033A CN 202211190131 A CN202211190131 A CN 202211190131A CN 115506033 A CN115506033 A CN 115506033A
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- felt
- furnace bottom
- electrode
- single crystal
- thermal field
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- 239000013078 crystal Substances 0.000 title claims abstract description 30
- 238000000034 method Methods 0.000 title claims abstract description 9
- 230000001681 protective effect Effects 0.000 claims abstract description 24
- 238000004321 preservation Methods 0.000 claims abstract description 18
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 claims description 21
- 229910052802 copper Inorganic materials 0.000 claims description 21
- 239000010949 copper Substances 0.000 claims description 21
- 239000000919 ceramic Substances 0.000 claims description 20
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 claims description 9
- 229910002804 graphite Inorganic materials 0.000 claims description 9
- 239000010439 graphite Substances 0.000 claims description 9
- 239000011248 coating agent Substances 0.000 claims description 7
- 238000000576 coating method Methods 0.000 claims description 7
- 238000009434 installation Methods 0.000 claims description 4
- 239000007787 solid Substances 0.000 claims description 4
- CREMABGTGYGIQB-UHFFFAOYSA-N carbon carbon Chemical compound C.C CREMABGTGYGIQB-UHFFFAOYSA-N 0.000 claims description 3
- 239000011203 carbon fibre reinforced carbon Substances 0.000 claims description 3
- 239000002131 composite material Substances 0.000 claims description 3
- 229910021421 monocrystalline silicon Inorganic materials 0.000 abstract description 6
- 238000010438 heat treatment Methods 0.000 abstract description 3
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 3
- 235000017166 Bambusa arundinacea Nutrition 0.000 description 2
- 235000017491 Bambusa tulda Nutrition 0.000 description 2
- 241001330002 Bambuseae Species 0.000 description 2
- 235000015334 Phyllostachys viridis Nutrition 0.000 description 2
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 2
- 230000002159 abnormal effect Effects 0.000 description 2
- 239000011425 bamboo Substances 0.000 description 2
- 238000002425 crystallisation Methods 0.000 description 2
- 230000008025 crystallization Effects 0.000 description 2
- 238000004880 explosion Methods 0.000 description 2
- 239000011159 matrix material Substances 0.000 description 2
- 238000012986 modification Methods 0.000 description 2
- 230000004048 modification Effects 0.000 description 2
- 229910052710 silicon Inorganic materials 0.000 description 2
- 239000010703 silicon Substances 0.000 description 2
- 230000009286 beneficial effect Effects 0.000 description 1
- 229910010293 ceramic material Inorganic materials 0.000 description 1
- 230000007547 defect Effects 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 239000012774 insulation material Substances 0.000 description 1
- 230000000149 penetrating effect Effects 0.000 description 1
- 230000002035 prolonged effect Effects 0.000 description 1
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Classifications
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- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B35/00—Apparatus not otherwise provided for, specially adapted for the growth, production or after-treatment of single crystals or of a homogeneous polycrystalline material with defined structure
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
- C30B29/02—Elements
- C30B29/06—Silicon
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- Chemical & Material Sciences (AREA)
- Engineering & Computer Science (AREA)
- Crystallography & Structural Chemistry (AREA)
- Materials Engineering (AREA)
- Metallurgy (AREA)
- Organic Chemistry (AREA)
- Crystals, And After-Treatments Of Crystals (AREA)
Abstract
The invention belongs to the technical field of photovoltaic monocrystalline silicon, and particularly relates to a thermal field centering structure of a monocrystalline furnace and a centering method, aiming at solving the technical problem of non-centering of a thermal field of a heating furnace, and adopting the technical scheme that: the utility model provides a structure is to well in single crystal growing furnace thermal field, sets up in single crystal growing furnace bottom, includes: the furnace bottom heat preservation fixed felt is arranged on the upper layer of the furnace bottom heat preservation fixed felt, four electrode holes are formed in the furnace bottom heat preservation fixed felt and the furnace bottom felt, electrodes penetrate through the electrode holes, positioning sleeves are arranged in the electrode holes, the outer surfaces of the positioning sleeves are in contact with the inner surfaces of the electrode holes, positioning through holes are formed in the centers of the positioning sleeves, and the inner walls of the positioning through holes are in contact with the outer walls of the electrodes; the upper end of the furnace bottom felt is provided with a pressing plate soft felt, the upper end of the pressing plate soft felt is fixed with a protective disc pressing sheet, and the positioning sleeve penetrates through the furnace bottom felt and the protective disc pressing sheet. The invention takes the position of the electrode as a reference to determine the positions of the furnace bottom felt, the furnace bottom heat preservation fixed felt, the press plate soft felt and the protective disc pressing sheet, thereby reducing the error caused by assembly.
Description
Technical Field
The invention belongs to the technical field of photovoltaic monocrystalline silicon, and particularly relates to a thermal field centering structure of a monocrystalline furnace and a centering method.
Background
The market scale of the monocrystalline silicon industry is rapidly increased, the size of a monocrystalline furnace and a thermal field is also small, the size of the monocrystalline furnace is large, however, the problem of thermal field centering in the monocrystalline furnace is frequently generated, the problem of thermal field centering failure after charging is up to 95% only by naked eyes, the influence of thermal field centering failure on monocrystalline silicon crystallization is large, the crystal bar can be seriously collided with a water screen, and abnormal accidents such as crystal bar explosion, silicon leakage and the like can be caused.
Disclosure of Invention
The invention aims to solve the technical problem of misalignment of a thermal field of a single crystal furnace, and provides a thermal field alignment structure of the single crystal furnace and an alignment method.
In order to solve the technical problems, the technical scheme adopted by the invention is as follows: the utility model provides a structure is to well in single crystal growing furnace thermal field, sets up in single crystal growing furnace bottom, includes: the furnace bottom heat preservation fixed felt is arranged on the upper layer of the furnace bottom heat preservation fixed felt, four electrode holes are formed in the furnace bottom heat preservation fixed felt and the furnace bottom felt, electrodes penetrate through the electrode holes, positioning sleeves are arranged in the electrode holes, the outer surfaces of the positioning sleeves are in contact with the inner surfaces of the electrode holes, positioning through holes are formed in the centers of the positioning sleeves, and the inner walls of the positioning through holes are in contact with the outer walls of the electrodes; the upper end of the furnace bottom felt is provided with a pressing plate soft felt, a protective disc pressing sheet is fixed at the upper end of the pressing plate soft felt, and the positioning sleeve penetrates through the furnace bottom felt and the protective disc pressing sheet.
Further, the electrode comprises a copper electrode, a graphite electrode and a ceramic base, the graphite electrode is detachably fixed at the upper end of the copper electrode, and the ceramic base is padded at the lower end of the copper electrode and is in contact with the bottom of the furnace.
Furthermore, the positioning sleeve comprises an upper clamping cylinder and a lower base, and the upper clamping cylinder is detachably connected with the lower base.
Furthermore, an annular flange is arranged at the upper end of the upper clamping cylinder, and the lower end face of the annular flange is abutted to the upper end face of the protective disc pressing sheet.
Furthermore, the upper clamping cylinder is a circular sleeve with a flange at the upper end, and an upper connecting ring is integrally formed at the lower end of the upper clamping cylinder; the lower base comprises a cylindrical base bottom wall with a positioning through hole arranged in the center and a base side wall extending upwards along the outer side of the bottom wall, the inner diameter of the base side wall is equal to the outer diameter of the upper connecting ring, and the upper connecting ring is nested in the base side wall.
Furthermore, the thickness of the bottom wall of the base is 30-40 mm, the outer diameter of an upper opening of the upper clamping cylinder is 135-140 mm, the inner diameter phi of the upper clamping cylinder is 105-110mm, and the inner diameter of the positioning through hole is 37-47 mm.
Furthermore, the upper clamping cylinder is made of a carbon-carbon composite material, and a SiC coating is arranged on the surface of the upper clamping cylinder; the lower base is made of ceramic.
Further, the thickness of the SiC coating is 0.19-0.21 mm.
Further, the invention also provides a single crystal furnace thermal field centering method, which comprises the following steps:
mounting a ceramic base and a copper electrode;
the lower base of the centering structure is concentrically embedded with the ceramic base and is arranged on the furnace bottom;
sequentially installing a furnace bottom felt, a furnace bottom heat preservation fixed felt, a pressing plate soft felt and a protective disc pressing sheet, and enabling an electrode hole to penetrate through the lower base;
mounting an upper clamping cylinder of the centering structure on the lower base, wherein the upper clamping cylinder penetrates into the electrode hole;
and a heat-insulating cylinder is installed by taking the spigot of the protective disc pressing sheet as an installation reference.
Compared with the prior art, the invention has the following beneficial effects.
The invention sets the positioning sleeve, matches the outer surface of the positioning sleeve with the inner surface of the electrode hole, matches the positioning through hole at the center of the positioning sleeve with the outer wall of the electrode, namely determines the positions of the furnace bottom felt, the furnace bottom heat preservation fixed felt, the press plate soft felt and the protective disc pressing sheet by taking the position of the electrode as a reference, thereby reducing the error brought by assembly and ensuring that the positions of the parts are fixed and unique.
Drawings
The invention is further described below with reference to the accompanying drawings.
FIG. 1 is a front view of a centering structure according to an embodiment of the present invention.
FIG. 2 is a schematic cross-sectional view of a positioning sleeve according to an embodiment of the present invention.
Fig. 3 is a schematic view of the shaft of the positioning sleeve according to the embodiment of the invention.
FIG. 4 is a partially enlarged view of the invention A.
In the figure, 1, a sleeve is positioned, 11 is a positioning through hole, 12 is an annular flange, 13 is an upper clamping cylinder, 131 is an upper connecting ring, 14 is a lower base, 141 is a base bottom wall, and 142 is a base side wall;
4 is a protective disc pressing sheet, 5 is a pressing plate soft felt, 6 is a copper electrode, 7 is a ceramic base, 8 is a furnace bottom felt, and 9 is a furnace bottom heat preservation fixed felt.
Detailed Description
Reference will now be made in detail to embodiments of the present invention, examples of which are illustrated in the accompanying drawings, wherein like or similar reference numerals refer to the same or similar elements or elements having the same or similar function throughout. The embodiments described below with reference to the drawings are illustrative and intended to be illustrative of the invention and are not to be construed as limiting the invention.
The market scale of the monocrystalline silicon industry is rapidly increased, the sizes of parts of the monocrystalline furnace and the thermal field are gradually increased, and the gaps among the parts are also increased along with the increase of the dimensional tolerance. Therefore, in a single crystal furnace with a large thermal field and a thermal field, the situation that the thermal field in the single crystal furnace is not aligned frequently occurs, the problem that the thermal field is not aligned after charging is difficult to judge by naked eyes during installation, the occurrence rate of the problem that the thermal field is not aligned is 95%, the defect that the thermal field is not aligned has great influence on the crystallization of the monocrystalline silicon, the crystal bar is collided with a water screen seriously, and abnormal accidents such as crystal bar explosion, silicon leakage and the like can be caused.
The heater and the crucible are positioned through a heating hole reserved in the heating furnace bottom, so that the verticality and the position of the heater and the crucible are easy to control, the bottom felt and the furnace bottom protective disc are positioned by electrodes, the upper heat-insulating cylinder is positioned by the bottom felt and a spigot on the furnace bottom protective disc, and the guide cover is positioned by the spigot of the heat-insulating cylinder.
Based on the above problems, the thermal field centering structure of the single crystal furnace according to the embodiment of the present invention will be described below with reference to the drawings.
As shown in fig. 1, a thermal field centering structure of a single crystal furnace, which is arranged at the bottom of the single crystal furnace, comprises: the furnace bottom heat preservation solid felt 9 is arranged on the upper layer of the furnace bottom heat preservation solid felt 9, four electrode holes are formed in the furnace bottom heat preservation solid felt 9 and the furnace bottom felt 8, and the electrode holes are circular through holes for penetrating electrodes.
A positioning sleeve 1 is arranged in the electrode hole, the outer surface of the positioning sleeve 1 is matched with the inner surface of the electrode hole, a positioning through hole 11 is formed in the center of the positioning sleeve 1, and the inner wall of the positioning through hole 11 is matched with the outer wall of the electrode 6; the upper end of the furnace bottom felt 8 is provided with a pressing plate soft felt 5, the upper end of the pressing plate soft felt 5 is fixed with a protective disc pressing sheet 4, and the positioning sleeve 1 penetrates through the furnace bottom felt 8 and the protective disc pressing sheet 4.
As shown in fig. 4, the electrode comprises a copper electrode 6, a graphite electrode 3 and a ceramic base 7, wherein a thread is arranged at the upper end of the copper electrode 6, a threaded hole which is upward from bottom is formed in the graphite electrode 3, the graphite electrode 3 is detachably fixed at the upper end of the copper electrode 6 through the thread, and the ceramic base 7 is padded at the lower end of the copper electrode 6 and is in contact with the furnace bottom to prevent the copper electrode 6 from being conducted with the furnace bottom.
It should be noted that the outer diameter of the ceramic base 7 is not greater than the outer diameter of the copper electrode 6, in this embodiment, the outer diameters of the ceramic base 7 and the copper electrode 6 are 75-90 mm, and correspondingly, the inner diameter of the positioning through hole 11 is 75-90 mm, and the positioning through hole 11 is tightly matched with the copper electrode 6 and the ceramic base 7, so as to ensure that the position of the positioning sleeve 1 relative to the copper electrode 6 is unique and concentric. Meanwhile, the positioning sleeve 1 is tightly matched with the electrode hole, in the embodiment, the outer diameter of the upper opening of the upper clamping cylinder 13 is 135-140 mm, and the inner diameter of the electrode hole is 135-140 mm, so that the positions of the furnace bottom felt 8, the furnace bottom heat preservation fixed felt 9, the pressing plate soft felt 5 and the protective disc pressing sheet 4 relative to the positioning sleeve 1 are fixed and unique, and thus, the positions of the furnace bottom felt 8, the furnace bottom heat preservation fixed felt 9, the pressing plate soft felt 5 and the protective disc pressing sheet 4 relative to the position of the copper electrode 6 are fixed and unique, and errors caused in the assembling process can be reduced.
It should be further noted that although the electrode and the furnace bottom are isolated by the insulation material, the gap between the electrode hole and the electrode often causes the electrode to strike fire due to the entering of foreign matters, and even the electrode strikes the furnace bottom when the electrode strikes fire seriously, which causes water leakage. The positioning sleeve 1 is closely matched with the electrode hole, the copper electrode 6 and the ceramic base 7, and foreign matters in the furnace can be prevented from entering, so that accidents caused by electrode ignition are avoided, and meanwhile, the annular flange 12 at the upper end of the positioning sleeve 1 further blocks the entering path of the foreign matters.
As shown in fig. 2-3, the positioning sleeve 1 comprises an upper clamping cylinder 13 and a lower base 14, and the upper clamping cylinder 13 is detachably connected with the lower base 14. Wherein, the upper end of the upper clamping cylinder 13 is provided with an annular flange 12, and the lower end surface of the annular flange 12 is abutted against the upper end surface of the protective disc pressing sheet 4. The upper clamping cylinder 13 is a circular sleeve with a flange at the upper end, and an upper connecting ring 131 is integrally formed at the lower end of the upper clamping cylinder 13; the lower base 14 comprises a cylindrical base bottom wall 141 with a positioning through hole 11 at the center and a base side wall 142 extending upwards along the outer side of the bottom wall 141, the inner diameter of the base side wall 142 is equal to the outer diameter of the upper connecting ring 131, and the upper connecting ring 131 is nested in the base side wall 142. Through dividing the position sleeve 1 into the last calorie of a section of thick bamboo 13 and the lower base 14 of can dismantling the connection, can install lower base 14 earlier, install a card section of thick bamboo 13 again, made things convenient for the installation of position sleeve 1, also provided convenience for follow-up clearance and change simultaneously.
In this embodiment, the thickness of the bottom wall 141 of the base is 30-40 mm, the inner diameter phi of the upper clamping cylinder 13 is 105-110mm, the height of the upper clamping cylinder is 300-310 mm, and the height of the lower base is 110-120 mm.
The upper clamping cylinder 13 is made of a carbon-carbon composite material, the surface of the upper clamping cylinder 13 is provided with a SiC coating, the SiC coating has the characteristics of high bonding strength, high density and the like, a matrix can be well protected, the service life of the matrix is prolonged, the thickness of the SiC coating is 0.19-0.21 mm, and the lower base 14 is made of a ceramic material which is the same as that of the ceramic base 7.
The embodiment also provides a method for centering the thermal field of the single crystal furnace, which uses the centering structure of the thermal field of the single crystal furnace and comprises the following steps:
s1, mounting a ceramic base 7 and a copper electrode 6;
s2, concentrically embedding the lower base 14 of the centering structure and the ceramic base 7, and installing the centering structure on the furnace bottom;
s3, sequentially installing a furnace bottom felt 8, a furnace bottom heat preservation fixed felt 9, a pressing plate soft felt 5 and a protective disc pressing sheet 4, and enabling an electrode hole to penetrate through a lower base 14;
s4, mounting the upper clamping cylinder 13 with the centering structure on the lower base 14, wherein the upper clamping cylinder 13 penetrates into the electrode hole;
s5, installing a graphite electrode 3 and an air guide cylinder;
and S6, mounting a heat-insulating cylinder by taking the spigot of the protective disc pressing sheet 4 as a mounting reference.
The above embodiments are merely illustrative of the principles of the present invention and its effects, and do not limit the present invention. It will be apparent to those skilled in the art that modifications and variations can be made in the above-described embodiments without departing from the spirit or scope of the invention. Accordingly, it is intended that all equivalent modifications or changes which can be made by those skilled in the art without departing from the spirit and technical spirit of the present invention be covered by the claims of the present invention.
Claims (9)
1. The utility model provides a structure is to well in single crystal growing furnace thermal field, sets up in single crystal growing furnace bottom, includes: the furnace bottom heat preservation solid felt (9) is characterized in that a positioning sleeve (1) is arranged in the electrode hole, the outer surface of the positioning sleeve (1) is matched with the inner surface of the electrode hole, a positioning through hole (11) is formed in the center of the positioning sleeve (1), and the inner wall of the positioning through hole (11) is matched with the outer wall of the electrode (6); the automatic positioning device is characterized in that a pressing plate soft felt (5) is arranged at the upper end of the furnace bottom felt (8), a protective disc pressing sheet (4) is fixed at the upper end of the pressing plate soft felt (5), and the positioning sleeve (1) penetrates through the furnace bottom felt (8) and the protective disc pressing sheet (4).
2. The single crystal furnace thermal field centering structure according to claim 1, wherein the electrodes comprise a copper electrode (6), a graphite electrode (3) and a ceramic base (7), the graphite electrode (3) is detachably fixed at the upper end of the copper electrode (6), and the ceramic base (7) is padded at the lower end of the copper electrode (6) and is in contact with the furnace bottom.
3. The single crystal furnace thermal field centering structure as claimed in claim 1, wherein the positioning sleeve (1) comprises an upper clamping cylinder (13) and a lower base (14), and the upper clamping cylinder (13) and the lower base (14) are detachably connected.
4. The single crystal furnace thermal field centering structure as claimed in claim 3, wherein the upper end of the upper clamping cylinder (13) is provided with an annular flange (12), and the lower end face of the annular flange (12) abuts against the upper end face of the protective disk pressing sheet (4).
5. The single crystal furnace thermal field centering structure as claimed in claim 3, wherein the upper clamping cylinder (13) is a circular sleeve with a flange at the upper end, and the lower end of the upper clamping cylinder (13) is integrally formed with an upper connecting ring (131); the lower base (14) comprises a cylindrical base bottom wall (141) with a positioning through hole (11) formed in the center and a base side wall (142) extending upwards along the outer side of the bottom wall (141), the inner diameter of the base side wall (142) is equal to the outer diameter of the upper connecting ring (131), and the upper connecting ring (131) is nested in the base side wall (142).
6. The single crystal furnace thermal field centering structure according to claim 3, wherein the thickness of the bottom wall (141) of the base is 30-40 mm, the outer diameter of the upper opening of the upper clamping cylinder (13) is 135-140 mm, the inner diameter phi of the upper clamping cylinder (13) is 105-110mm, and the inner diameter of the positioning through hole (11) is 75-90 mm.
7. The single crystal furnace thermal field centering structure according to claim 3, wherein the upper clamping cylinder (13) is made of a carbon-carbon composite material, and a SiC coating is arranged on the surface of the upper clamping cylinder (13); the lower base (14) is made of ceramic.
8. The single crystal furnace thermal field centering structure of claim 7, wherein the thickness of the SiC coating is 0.19-0.21 mm.
9. The method for centering the thermal field of the single crystal furnace according to the claims 1 to 8, characterized by comprising the following steps:
mounting a ceramic base (7) and a copper electrode (6);
a lower base (14) of the centering structure is concentrically embedded with the ceramic base (7) and is installed on the furnace bottom;
a furnace bottom felt (8), a furnace bottom heat preservation fixed felt (9), a pressing plate soft felt (5) and a protective disc pressing sheet (4) are sequentially arranged, and an electrode hole penetrates through a lower base (14);
an upper clamping cylinder (13) with a centering structure is arranged on a lower base (14), and the upper clamping cylinder (13) penetrates into an electrode hole;
installing a graphite electrode (3) and an air guide cylinder;
and a heat-insulating cylinder is installed by taking the spigot of the protective disc pressing sheet (4) as an installation reference.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202211190131.1A CN115506033A (en) | 2022-09-28 | 2022-09-28 | Thermal field centering structure and centering method of single crystal furnace |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202211190131.1A CN115506033A (en) | 2022-09-28 | 2022-09-28 | Thermal field centering structure and centering method of single crystal furnace |
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| CN115506033A true CN115506033A (en) | 2022-12-23 |
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| CN202211190131.1A Pending CN115506033A (en) | 2022-09-28 | 2022-09-28 | Thermal field centering structure and centering method of single crystal furnace |
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| CN (1) | CN115506033A (en) |
Citations (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| EP0145219A1 (en) * | 1983-10-31 | 1985-06-19 | Hatch Associates Ltd. | Improved electrode assembly for electric arc furnaces |
| CN212865061U (en) * | 2020-09-01 | 2021-04-02 | 宁夏中欣晶圆半导体科技有限公司 | Copper electrode ceramic protective sleeve for single crystal furnace and single crystal furnace |
| CN214612838U (en) * | 2020-12-22 | 2021-11-05 | 内蒙古华耀光电科技有限公司 | Furnace bottom heat preservation assembly of single crystal furnace |
| CN217052485U (en) * | 2022-02-14 | 2022-07-26 | 四川永祥光伏科技有限公司 | Furnace chassis of location thermal field |
| CN115074818A (en) * | 2022-06-29 | 2022-09-20 | 乌海市京运通新材料科技有限公司 | Filling tool applied to quartz sand in single crystal manufacturing |
-
2022
- 2022-09-28 CN CN202211190131.1A patent/CN115506033A/en active Pending
Patent Citations (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| EP0145219A1 (en) * | 1983-10-31 | 1985-06-19 | Hatch Associates Ltd. | Improved electrode assembly for electric arc furnaces |
| CN212865061U (en) * | 2020-09-01 | 2021-04-02 | 宁夏中欣晶圆半导体科技有限公司 | Copper electrode ceramic protective sleeve for single crystal furnace and single crystal furnace |
| CN214612838U (en) * | 2020-12-22 | 2021-11-05 | 内蒙古华耀光电科技有限公司 | Furnace bottom heat preservation assembly of single crystal furnace |
| CN217052485U (en) * | 2022-02-14 | 2022-07-26 | 四川永祥光伏科技有限公司 | Furnace chassis of location thermal field |
| CN115074818A (en) * | 2022-06-29 | 2022-09-20 | 乌海市京运通新材料科技有限公司 | Filling tool applied to quartz sand in single crystal manufacturing |
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