CN218161210U - TOF module heat radiation structure - Google Patents

TOF module heat radiation structure Download PDF

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Publication number
CN218161210U
CN218161210U CN202222849813.0U CN202222849813U CN218161210U CN 218161210 U CN218161210 U CN 218161210U CN 202222849813 U CN202222849813 U CN 202222849813U CN 218161210 U CN218161210 U CN 218161210U
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circuit substrate
ceramic substrate
substrate
laser emitter
tof module
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CN202222849813.0U
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崔婷
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Kunshanqiu Titanium Photoelectric Technology Co Ltd
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Kunshanqiu Titanium Photoelectric Technology Co Ltd
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Abstract

The application provides a TOF module heat radiation structure, includes: the laser emitting device comprises a circuit substrate, a ceramic substrate and a laser emitter; the circuit substrate is arranged on the end face of one side of the ceramic substrate, a connecting hole penetrating through the circuit substrate is formed in the middle of the circuit substrate, and the laser transmitter is connected with a lead arranged in the ceramic substrate after penetrating through the connecting hole of the circuit substrate; in this application, be provided with ceramic substrate in circuit substrate's bottom, change circuit substrate's structure simultaneously, make laser emitter pass together behind the circuit substrate be connected with ceramic substrate to this dispels the heat to circuit substrate and laser emitter through ceramic substrate, thereby the heat in circuit substrate and the laser emitter effectively conducts away, and with this radiating efficiency in improving the TOF module, ceramic substrate heat conductivility is good moreover, can further improve the radiating effect.

Description

TOF module heat radiation structure
Technical Field
The utility model belongs to the technical field of the module technical field of TOF makes a video recording and specifically relates to a TOF module heat radiation structure is related to.
Background
TOF (Time of Flight) technology, which generates depth information by continuously sending light pulses to a target, reflecting the light after encountering the target object, receiving the light returning from the object with a sensor, calculating the distance of the object to be photographed by calculating the Time difference or phase difference between the light emission and the emission, and further combining with conventional camera photographing, thereby presenting the three-dimensional contour of the object in the form of images with different colors representing different distances.
Contain laser emitter among the TOF camera module, through laser emitter transmission laser energy in order to carry out corresponding work. In the prior art, a laser emitter is generally connected to a circuit substrate, and when a TOF camera module works, a large amount of heat is generated at the laser emitter and the circuit substrate, but the inside of the existing TOF camera module is in a sealed state, so that the heat at the laser emitter and the circuit substrate is difficult to be effectively conducted out, and the situation that the performance is affected due to overhigh temperature inside the TOF camera module can occur; and TOF camera module range finding in the present trade is less, in order to increase the application distance, can increase laser emitter's power correspondingly, and increase power just can corresponding increase laser emitter and the operating load of circuit base plate, finally leads to the temperature to further improve, seriously influences TOF camera module's performance and life.
Therefore, it is necessary to provide a technical solution for effectively dissipating heat at the laser emitter and the circuit substrate inside the TOF camera module.
SUMMERY OF THE UTILITY MODEL
The utility model provides a TOF module heat radiation structure to solve the poor problem of inside heat dispersion in the current TOF camera module.
The utility model adopts the technical scheme as follows: a TOF module heat dissipating structure comprising: the laser emitting device comprises a circuit substrate, a ceramic substrate and a laser emitter; the circuit substrate is arranged on the end face of one side of the ceramic substrate, a connecting hole penetrating through the circuit substrate is formed in the middle of the circuit substrate, and the laser emitter penetrates through the connecting hole of the circuit substrate and then is connected with a lead arranged in the ceramic substrate;
and radiating the circuit substrate and the laser emitter by using the ceramic substrate.
In an embodiment, a plurality of clamping holes penetrating through the circuit substrate are formed in one side of the circuit substrate, a plurality of first bonding pads in one-to-one correspondence with the clamping holes are formed in the ceramic substrate, a welding block is arranged between the clamping holes and the first bonding pads, and the circuit substrate and the ceramic substrate are fixed through the welding block.
In one embodiment, the card hole is provided in a circular or semicircular shape.
In an embodiment, a metal layer for connecting a wire is disposed in the card hole, and the metal layer is disposed along a sidewall of the card hole and fixed on the circuit substrate.
In one embodiment, the metal layer is provided as a copper sheet.
In an embodiment, a plurality of grooves are concavely arranged on the ceramic substrate, the first bonding pads are correspondingly arranged in the grooves one to one, the cross section area of each groove is larger than that of each first bonding pad, and the grooves are used for accommodating the welding blocks during welding.
In one embodiment, a glue layer is disposed at a connection end surface of the circuit substrate and the ceramic substrate, and the glue layer is disposed around the connection hole.
In one embodiment, a plurality of second pads are disposed on the ceramic substrate, the second pads are located in the vertical projection area of the connection hole, and the laser emitter is welded to the ceramic substrate at the second pads.
In one embodiment, a lead is connected between the first pad and the second pad, and the lead is disposed in the ceramic substrate; the circuit substrate is connected and conducted with the laser transmitter through the lead.
In one embodiment, the wire is U-shaped, and both ends of the wire extend to the outside of the ceramic substrate and are fixed in the first pad and the second pad, respectively, to be connected to the circuit substrate and the laser emitter at both ends, respectively.
The utility model has the advantages that:
in this application, be provided with ceramic substrate in circuit substrate's bottom, change circuit substrate's structure simultaneously, make laser emitter pass together behind the circuit substrate be connected with ceramic substrate to this dispels the heat to circuit substrate and laser emitter through ceramic substrate, thereby effectively conduct away the heat in circuit substrate and the laser emitter, and with this radiating efficiency in improving the TOF module, ceramic substrate heat conductivility is good moreover, can further improve the radiating effect.
Drawings
The accompanying drawings, which are included to provide a further understanding of the invention and are incorporated in and constitute a part of this specification, illustrate embodiments of the invention and together with the description serve to explain the principles of the invention and not to limit the invention. In the drawings:
FIG. 1 is a schematic view of a circuit board according to an embodiment of the present invention;
fig. 2 is a schematic structural diagram of a ceramic substrate according to an embodiment of the present invention;
FIG. 3 is a schematic view illustrating a connection between a circuit board and a ceramic board according to an embodiment of the present invention;
fig. 4 is a cross-sectional view of a heat dissipation structure according to an embodiment of the present invention;
FIG. 5 is an enlarged view of a portion of FIG. 4 at A;
fig. 6 is a schematic structural view of a circuit substrate according to an embodiment of the present invention;
FIG. 7 is a schematic view of a circuit board and a ceramic board according to an embodiment of the present invention;
fig. 8 is a sectional view of a second embodiment of the present invention.
Fig. 9 is a schematic view of the wire connection of fig. 8.
Reference is made to the accompanying drawings in which: 1. a circuit substrate; 11. a clamping hole; 12. connecting holes; 13. a metal layer; 2. a ceramic substrate; 21. a first pad; 22. a second pad; 23. a groove; 3. a glue layer; 4. a laser transmitter; 5. a welding point; 6. and (7) welding the blocks.
Detailed Description
The following detailed description of the embodiments of the present invention will be made with reference to the accompanying drawings. It is to be understood that the description of the embodiments herein is for purposes of illustration and explanation only and is not intended to limit the invention.
[ EXAMPLES ] A method for producing a semiconductor device
Referring to fig. 1-5, the present embodiment provides a TOF module heat dissipation structure, including: the circuit board comprises a circuit substrate 1, a ceramic substrate 2 and a laser emitter 4; in this embodiment, the circuit substrate 1 and the ceramic substrate 2 are both square, and the cross-sectional area of the ceramic substrate 2 is larger than that of the circuit substrate 1, wherein the circuit substrate 1 is mounted on the upper end surface of the ceramic substrate 2, a connection hole 12 is formed in the middle of the circuit substrate 1, and the connection hole 12 penetrates through the upper and lower end surfaces of the circuit substrate 1, so that the laser emitter 4 is connected with a wire arranged inside the ceramic substrate 2 after penetrating through the connection hole 12 of the circuit substrate 1; in this embodiment, dispel the heat through ceramic substrate 2 to circuit substrate 1 and laser emitter 4 to this effectively conducts away the heat in circuit substrate 2 and the laser emitter 4, and with this radiating efficiency who improves in the TOF module, thereby guarantee that the inside temperature of TOF module is in normal condition, and ceramic substrate 2 thermal conductivity is good, can further improve the radiating effect.
It should be noted that, in this embodiment, the circuit substrate 1 is a PCB circuit board or an RFPC circuit board.
In this embodiment, a plurality of semicircular clamping holes 11 are formed in one side of the circuit substrate 1, and the clamping holes 11 vertically penetrate through the upper end surface and the lower end surface of the circuit substrate 1, specifically, three clamping holes 11 are formed, and are uniformly distributed on one side of the circuit substrate 1 and located at the edge (see fig. 1), and the clamping holes 11 are formed at the position, so that the semicircular structure of the clamping holes 11 can be completely exposed, and can be conveniently contacted with welding equipment, thereby facilitating the welding work; the ceramic substrate 2 is provided with a plurality of first pads 21, when the circuit substrate 1 is mounted, the first pads 21 correspond to the card holes 11 of the circuit substrate 1 one by one, and then the circuit substrate 1 and the ceramic substrate 2 are fixed by welding between the card holes 11 and the first pads 21 to form welding blocks 6 (see fig. 5).
It should be noted that when the circuit board 1 and the ceramic board 2 are welded and assembled, the solder balls are placed in the card holes 11, and the structure of the card holes 11 can limit the solder balls to a certain extent, so that the solder balls can be stably placed, and the welding is convenient; then, the solder balls are applied by laser welding to form solder bumps 6, thereby fixing the circuit board 1 and the ceramic board 2.
In this embodiment, be provided with semicircular metal level 13 in the card hole 11, it is concrete, metal level 13 sets up to the copper sheet, and metal level 13 sets up and is fixed in on circuit substrate 1 along the lateral wall of card hole 11, through metal level 13 and the wire welding back on the first pad 21, circuit substrate 1 is through the wire welding on the first pad 21, realize its and 2 inside wire's of ceramic substrate intercommunication, thereby be convenient for follow-up laser emitter 4 to pass through the 2 inside wire's of ceramic substrate intercommunication, realize that laser emitter 4 switches on with being connected of circuit substrate 1.
It should be noted that after the metal layer 13 is mounted in the card hole 11, a solder ball is then placed to form the solder bump 6 to fix the circuit substrate 1 and the ceramic substrate 2.
In this embodiment, a plurality of grooves 23 (see fig. 5) are concavely formed in the ceramic substrate 2, the first pads 21 are correspondingly disposed in the grooves 23 one by one, and the cross-sectional area of the grooves 23 is larger than that of the first pads 21, so that the solder balls in the card holes 11 can be melted during laser welding, and can overflow to other places, and at this time, the overflowing solder paste can be accommodated by the grooves 23, thereby preventing the solder paste from flowing to other places to affect the appearance and the formation of the solder bumps 6, and finally ensuring the welding effect.
In this embodiment, be provided with glue layer 3 between the up end of ceramic substrate 2 and the lower terminal surface of circuit substrate 1, and glue layer 3 sets up around connecting hole 12, when installation ceramic substrate 2 and circuit substrate 1, fixes in advance both through glue layer 3 to can make ceramic substrate 2 and circuit substrate 1 stably weld.
In this embodiment, the ceramic substrate 2 is provided with a plurality of second pads 22, the second pads 22 are located in a vertical projection region of the connection hole 12 facing the ceramic substrate 2, the area of the vertical projection region is the same as the area of the connection hole 12, the laser emitter 4 is located in the connection hole 12, and the lower surface of the laser emitter 4 is welded to the ceramic substrate 2 at the second pads 22 and is connected to the internal lead of the ceramic substrate 2. The specific welding mode is as follows: solder paste is first placed on the second pads 22, and then the solder joints 5 are formed between the ceramic substrate 2 and the laser emitter 4 by SMT (Surface Mount Technology) bonding, so that the two are fixed, and at the same time, the connecting wires of other components are led out and bonded into the second pads 22, so that the laser emitter 4 is electrically connected to other components. In this embodiment, a wire is connected between the first pad 21 and the second pad 22, so that the laser emitter 4 and the circuit substrate 1 can be connected and conducted through the wire between the first pad 21 and the second pad 22, and meanwhile, when other electronic devices on the circuit substrate 1 need to be connected and conducted with the laser emitter 4, only the connecting wires of other electronic devices need to be led to the first pad 21 of the circuit substrate 1, and the wires through the first pad 21 and the second pad 22 are connected and conducted, so that the other electronic devices on the circuit substrate 1 are connected and conducted with the laser emitter 4.
Further, the lead between the first bonding pad 21 and the second bonding pad 22 is disposed in the ceramic substrate 2, so that when the lead generates heat during operation, the heat is quickly conducted out through the ceramic substrate 2, thereby improving the heat dissipation effect. In this embodiment, the lead is U-shaped (as shown in fig. 9) and disposed in the ceramic substrate 2, and both ends of the lead extend to the outside of the ceramic substrate 2 and are fixed in the first pad 21 and the second pad 22, respectively, so as to be connected to the circuit substrate 1 and the laser emitter 4, respectively, at both ends.
Of course, in other embodiments, the shape of the lead is not limited to the U shape, and may be set to other shapes as long as it is ensured that the lead is disposed in the ceramic substrate 2 and the connection effect is ensured.
[ example two ]
Referring to fig. 6 to 8, the difference between the present embodiment and the previous embodiment is: in this embodiment, the card holes 11 are arranged in a circular shape and uniformly arranged on one side of the circuit board 1 (see fig. 6), and the metal layer 13 is arranged in a circular ring shape and mounted in the card holes 11.
Of course, in other embodiments, the shape of the fastening hole 11 may be changed according to the actual situation, such as being set to be square, prismatic, or irregular, as long as the welding effect and the connection effect can be ensured.
The assembling process of the TOF heat dissipation structure of the present application is: before assembling, the electronic component on the circuit substrate 1 may be mounted on the circuit substrate 1 by SMT soldering, then the metal layer 13 is disposed at the card hole 11 of the circuit substrate 1, then the circuit substrate 1 is placed on the ceramic substrate 2, and the glue layer 3 is disposed between the two, so as to pre-fix the circuit substrate 1 and the ceramic substrate 2, and after the two are pre-fixed, the card hole 11 and the first pad 21 are in one-to-one correspondence, and the second pad 22 is located in the vertical projection area of the connection hole 12, and a wire is connected between the first pad 21 and the second pad 22, and the wire is disposed inside the ceramic substrate 2, and the wire is U-shaped (as shown in fig. 9).
Subsequently, solder balls are placed at the card holes 11 and laser welding is performed, whereby solder bumps 6 are formed at the card holes 11 and the first pads 21, thereby solder-fixing the ceramic substrate 2 and the wiring substrate 1. Then, solder paste is placed at the second bonding pad 22, SMT welding is performed here, so that the laser emitter 4 is welded to the second bonding pad 22, the laser emitter 4 is installed on the ceramic substrate 2, and since a wire is connected between the first bonding pad 21 and the second bonding pad 22 and is arranged inside the ceramic substrate 2, connection and conduction between the laser emitter 4 and the circuit substrate 1 are achieved, welding operation of the bonding pads is facilitated, the wire is arranged inside the ceramic substrate 2, heat dissipation of the ceramic substrate 2 to the wire is facilitated, and certainly, the ceramic substrate 2 also has a protection effect on the wire.
Finally, after the welding operation of pad is accomplished, on line substrate 1 and laser emitter 4 all are connected to ceramic substrate 2, dispel the heat to both through ceramic substrate 2, come out the heat conduction in line substrate 1 and the laser emitter 4 promptly to improve the radiating efficiency of TOF module, thereby guarantee that the inside temperature of TOF module is normal, moreover, ceramic substrate 2 heat conductivility is good, can further improve the radiating effect.
In addition, in the present application, a lead is connected between the first pad 21 and the second pad 22, and the lead is disposed inside the ceramic substrate 2, and the laser emitter 4 is connected and conducted with the circuit substrate 1 through the lead, whereas in the prior art, the laser emitter 4 is directly connected with the circuit substrate 1 through the lead, and the lead is exposed outside; therefore, compared with the prior art, this application has changed the connected mode of laser emitter 4 and circuit substrate 1, the radiating mode to the produced heat of wire itself has also been changed, the adoption of traditional metallic structure COB processing procedure has been avoided, consequently reducible assembly cost, and the setting of first pad 21 and second pad 22, make things convenient for each part to weld connecting wire so far, and then make things convenient for the connection installation of each part, and simultaneously, wire setting between first pad 21 and the second pad 22 is inside ceramic substrate 2, can improve the whole aesthetic property of product, and conveniently go out the heat conduction that produces in the wire, in order further to improve the radiating effect.
As long as the idea created by the present invention is not violated, various embodiments of the present invention can be arbitrarily combined, and all should be regarded as the content disclosed by the present invention; the utility model discloses an in the technical conception scope, carry out multiple simple variant and different embodiments to technical scheme and go on not violating the utility model discloses the arbitrary combination of the thought of creation all should be within the protection scope.

Claims (10)

1. The utility model provides a TOF module heat radiation structure which characterized in that includes: the laser emitting device comprises a circuit substrate, a ceramic substrate and a laser emitter; the circuit substrate is arranged on the end face of one side of the ceramic substrate, a connecting hole penetrating through the circuit substrate is formed in the middle of the circuit substrate, and the laser emitter penetrates through the connecting hole of the circuit substrate and then is connected with a lead arranged in the ceramic substrate;
and radiating the circuit substrate and the laser emitter by the ceramic substrate.
2. The TOF module heat spreading structure of claim 1 wherein: one side of circuit substrate is provided with a plurality of card holes that run through circuit substrate, be provided with on the ceramic substrate a plurality of with the first pad of card hole one-to-one, card hole with be provided with the welding piece between the first pad, by the welding piece is fixed circuit substrate reaches ceramic substrate.
3. The TOF module heat spreading structure of claim 2 wherein: the clamping hole is round or semicircular.
4. The TOF module heat spreading structure of claim 2 wherein: and a metal layer for connecting a lead is arranged in the clamping hole, and the metal layer is arranged along the side wall of the clamping hole and is fixed on the circuit substrate.
5. The TOF module heat dissipation structure of claim 4 wherein: the metal layer is arranged as a copper sheet.
6. The TOF module heat dissipation structure of claim 2, wherein: the ceramic substrate is provided with a plurality of grooves inwards in a concave mode, the first welding discs are arranged in the grooves in a one-to-one mode, the cross section area of each groove is larger than that of each first welding disc, and the grooves are used for containing the welding blocks during welding.
7. The TOF module heat spreading structure of claim 1 wherein: and a glue layer is arranged at the connecting end face of the circuit substrate and the ceramic substrate and surrounds the connecting hole.
8. The TOF module heat dissipation structure of claim 2, wherein: the ceramic substrate is provided with a plurality of second bonding pads, the second bonding pads are located in the vertical projection area of the connecting holes, and the laser emitter is welded with the ceramic substrate at the second bonding pads.
9. The TOF module heat spreading structure of claim 8 wherein: a lead is connected between the first bonding pad and the second bonding pad and is arranged in the ceramic substrate; the circuit substrate is connected and conducted with the laser transmitter through the lead.
10. The TOF module heat spreading structure of claim 9 wherein: the wire is U-shaped, just the both ends of wire extend to ceramic substrate's outside is fixed in respectively in first pad with in the second pad to do at both ends punishment respectively with circuit substrate with laser emitter connects.
CN202222849813.0U 2022-10-27 2022-10-27 TOF module heat radiation structure Active CN218161210U (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
CN202222849813.0U CN218161210U (en) 2022-10-27 2022-10-27 TOF module heat radiation structure

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
CN202222849813.0U CN218161210U (en) 2022-10-27 2022-10-27 TOF module heat radiation structure

Publications (1)

Publication Number Publication Date
CN218161210U true CN218161210U (en) 2022-12-27

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Family Applications (1)

Application Number Title Priority Date Filing Date
CN202222849813.0U Active CN218161210U (en) 2022-10-27 2022-10-27 TOF module heat radiation structure

Country Status (1)

Country Link
CN (1) CN218161210U (en)

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