CN218123408U - Display panel and light-emitting element and back plate used for same - Google Patents
Display panel and light-emitting element and back plate used for same Download PDFInfo
- Publication number
- CN218123408U CN218123408U CN202221308245.7U CN202221308245U CN218123408U CN 218123408 U CN218123408 U CN 218123408U CN 202221308245 U CN202221308245 U CN 202221308245U CN 218123408 U CN218123408 U CN 218123408U
- Authority
- CN
- China
- Prior art keywords
- layer
- bonding
- pure metal
- emitting element
- layers
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Active
Links
- 239000002184 metal Substances 0.000 claims abstract description 315
- 229910052751 metal Inorganic materials 0.000 claims abstract description 315
- 229910045601 alloy Inorganic materials 0.000 claims abstract description 68
- 239000000956 alloy Substances 0.000 claims abstract description 68
- 230000008018 melting Effects 0.000 claims abstract description 37
- 238000002844 melting Methods 0.000 claims abstract description 37
- 229910000679 solder Inorganic materials 0.000 claims description 83
- 239000004065 semiconductor Substances 0.000 claims description 73
- 150000002739 metals Chemical class 0.000 claims description 17
- 239000000463 material Substances 0.000 claims description 9
- 238000004806 packaging method and process Methods 0.000 claims 1
- 238000000034 method Methods 0.000 abstract description 14
- 238000001704 evaporation Methods 0.000 abstract description 2
- 239000010410 layer Substances 0.000 description 629
- 238000005476 soldering Methods 0.000 description 16
- 238000010438 heat treatment Methods 0.000 description 14
- 238000003466 welding Methods 0.000 description 13
- 238000010586 diagram Methods 0.000 description 10
- 239000012790 adhesive layer Substances 0.000 description 7
- 239000000758 substrate Substances 0.000 description 6
- 238000007740 vapor deposition Methods 0.000 description 6
- 238000004519 manufacturing process Methods 0.000 description 3
- 239000000155 melt Substances 0.000 description 3
- 230000007547 defect Effects 0.000 description 2
- 238000006073 displacement reaction Methods 0.000 description 2
- 230000000694 effects Effects 0.000 description 2
- 230000005496 eutectics Effects 0.000 description 2
- 239000010931 gold Substances 0.000 description 2
- 229910052737 gold Inorganic materials 0.000 description 2
- 238000012986 modification Methods 0.000 description 2
- 230000004048 modification Effects 0.000 description 2
- 239000011241 protective layer Substances 0.000 description 2
- 230000000903 blocking effect Effects 0.000 description 1
- 238000000151 deposition Methods 0.000 description 1
- 238000004134 energy conservation Methods 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 230000007613 environmental effect Effects 0.000 description 1
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 description 1
- 238000005286 illumination Methods 0.000 description 1
- 239000007769 metal material Substances 0.000 description 1
Images
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/15—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components with at least one potential-jump barrier or surface barrier specially adapted for light emission
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/36—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the electrodes
- H01L33/40—Materials therefor
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/48—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
- H01L33/62—Arrangements for conducting electric current to or from the semiconductor body, e.g. lead-frames, wire-bonds or solder balls
Abstract
The utility model provides a display panel and be used for this display panel's light emitting component and backplate, be formed with first pad on the backplate and be used as the second pad of restoreing the pad, first pad includes first tie coat and first bonding layer, the second pad includes second tie coat and second bonding layer, first bonding layer and second bonding layer are multilayer structure, this multilayer structure includes multilayer pure metal layer to the bonding temperature on first bonding layer is higher than the bonding temperature on second bonding layer. The multi-layer pure metal layers are formed on the first bonding pad and the second bonding pad by adopting an evaporation method, so that the purity of each pure metal layer is ensured, and the alloy with different melting points can be formed conveniently in the follow-up process. When the second bonding pad is heated to weld the LED chips for repair, the first alloy on the first bonding pad can not be melted, so that the stability of the LED chips on the first bonding pad is ensured, the batch offset of the LED chips is prevented, and the batch transfer yield of the LED chips can be ensured.
Description
Technical Field
The utility model relates to a semiconductor device and technical field, in particular to display panel and be used for this display panel's light emitting component and backplate.
Background
The LED has the characteristics of high luminous efficiency, long service life, safety, reliability, environmental protection and energy conservation, and is particularly concerned by people in the fields of illumination and display. When the LED is used for displaying, a huge amount of LED chips need to be transferred, the number of the transferred LED chips is in the level of millions or even tens of millions, the transfer of the mass production level and the bonding yield of 99.9999% need to be realized, and the repairable technology after bonding is the key. In the existing metal bonding process, a low-melting-point solder alloy is deposited, then the solder is heated in a thermal mode, and a metallurgical bonding connection point is formed after bonding.
In the Micro-LED display back plate, the gaps among the LED chips are very small, the gaps are smaller than 100 micrometers, secondary repairable bonding is needed if transfer failure or chip failure is found after primary bonding, and the newly transferred LED chips (used for repairing) need to be subjected to repairable metal bonding in the process of secondary repairable bonding.
In the prior art, the same solder is deposited on the bonding pads for the primary bonding and the repair bonding in the back plate, or the same solder is deposited on the LED chips (the primary bonding chip and the repair chip) for the same back plate. In the repair bonding process, the newly transferred LED chip needs to be bonded, and the bonding temperature may re-melt or partially melt the bonding points of the once bonded LED chip that has been bonded, thereby causing batch shift of the LED chips or damage to the bonding points. If effective repair cannot be performed, it is very difficult to achieve a yield (99.9999%) of mass production.
Based on the above defects, it is necessary to provide a repair technique capable of ensuring the transfer yield of LED chips.
SUMMERY OF THE UTILITY MODEL
In view of the defects existing in the aspects of LED chip transfer and repair in the display panel in the prior art, the utility model provides a display panel and be used for this display panel's light emitting component and backplate. And respectively forming a first bonding layer and a second bonding layer on the first pad and the second pad for repair of the backboard, wherein the first bonding layer and the second bonding layer comprise multiple pure metal layers, and the bonding temperature of the first bonding layer is higher than that of the second bonding layer. Therefore, the LED chip bonding process for repairing after one-time bonding is guaranteed, the bonded LEDs cannot be affected by heating the second bonding layer, the condition of batch deviation of the LEDs cannot occur, and the transfer yield of the LED chips is guaranteed.
According to an embodiment of the present invention, there is provided a back plate for bonding a light emitting element, the surface of the back plate is provided with a first bonding pad and a second bonding pad for bonding the light emitting element, the second bonding pad is used as a repair pad, wherein the first bonding pad includes a first bonding layer and a first bonding layer, the second bonding pad includes a second bonding layer and a second bonding layer, the first bonding layer and the second bonding layer are each a multilayer structure, the multilayer structure includes a plurality of pure metal layers, and the bonding temperature of the first bonding layer is higher than the bonding temperature of the second bonding layer.
Optionally, the first bonding layer and the second bonding layer have the same number of pure metal layers, or the first bonding layer and the second bonding layer have different numbers of pure metal layers.
Optionally, the first bonding layer includes at least two pure metal layers formed of different metals, and the second bonding layer includes at least two pure metal layers formed of different metals.
Optionally, the first bonding layer and the second bonding layer each include a plurality of alternately stacked pure metal layers formed of a first metal and a second metal, and the melting point of the first metal is higher than that of the second metal.
Optionally, the ratio of the thicknesses of the pure metal layers formed by the first metal and the second metal is 1.
Optionally, the pure metal layer formed by the first metal and the second metal has a first thickness ratio in the first bonding layer, the pure metal layer formed by the first metal and the second metal has a second thickness ratio in the second bonding layer, and the first thickness ratio is greater than the second thickness ratio.
Optionally, the stacking order of the plurality of pure metal layers in the first bonding layer and the second bonding layer is different.
Optionally, a material for forming at least one pure metal layer of the multiple pure metal layers of the second bonding layer is different from a material for forming any pure metal layer of the multiple pure metal layers of the first bonding layer.
According to another embodiment of the present invention, there is provided a display panel, including:
the back plate is provided with a first bonding pad and a second bonding pad, wherein the first bonding pad comprises a first bonding layer and a first alloy, the second bonding pad comprises a second bonding layer and a second bonding layer, the second bonding layer is of a multilayer structure, and the multilayer structure comprises a plurality of pure metal layers; and
a light emitting element fixed on the back plate, the light emitting element including a first light emitting element soldered to the first pad via the first alloy, and a temperature at which the first alloy starts to melt is higher than a bonding temperature of the second bonding layer.
Optionally, the light emitting element further comprises a repair light emitting element, and the repair light emitting element is welded on at least one of the second pads through a second alloy.
Optionally, the light emitting element comprises:
a semiconductor structure including a first semiconductor layer, a second semiconductor layer, and a light emitting layer between the first semiconductor layer and the second semiconductor layer, the first semiconductor layer and the second semiconductor layer having opposite conductivity types;
and the electrode structure comprises a first electrode and a second electrode, the first electrode is in conductive connection with the first semiconductor layer, the second electrode is in conductive connection with the second semiconductor layer, and the light-emitting element is welded to the back plate through the electrode structure.
According to another embodiment of the present invention, there is provided a light emitting device for a display panel, the light emitting device is divided into a first light emitting device and a repair light emitting device for replacing the first light emitting device which cannot be normally lit in the display panel, the light emitting device includes a semiconductor structure and an electrode structure formed on a surface of the semiconductor structure, the electrode structure of the first light emitting device includes a first welding layer, the electrode structure for repairing the light emitting device includes a second welding layer, the first welding layer and the second welding layer are both multilayer structures, the multilayer structures include a plurality of pure metal layers, and a bonding temperature of the first welding layer is higher than a bonding temperature of the second welding layer.
As described above, the display panel, the light emitting element and the back plate of the display panel of the present invention have the following advantages:
the utility model discloses a be formed with first pad on the backplate and be used as the second pad of restoreing the pad, first pad includes first tie coat and first bonding layer, the second pad includes second tie coat and second bonding layer, first bonding layer and second bonding layer are multilayer structure, this multilayer structure includes the pure metal layer of multilayer, the bonding temperature on first bonding layer and second bonding layer is controlled through the content (for example thickness ratio) of controlling the pure metal layer of multilayer medium-high melting point metal layer and low melting point metal layer for the bonding temperature on first bonding layer is higher than the bonding temperature on second bonding layer. The multiple pure metal layers are formed on the first bonding pad and the second bonding pad by adopting an evaporation method, so that the purity of each pure metal layer is ensured, and the alloy with different melting points can be conveniently formed subsequently. At a first bonding temperature, the first bonding layer is melted to form a first alloy to fix the LED chip to a first bonding pad of the backboard; at the same time, the second bonding layer on the second pad melts to form a second alloy having a melting temperature lower than that of the first alloy. Therefore, when the second bonding pad is heated to weld and repair the LED chip, the first alloy on the first bonding pad is not melted, the stability of the LED chip on the first bonding pad is ensured, batch offset is prevented, and the batch transfer yield of the LED chip can be ensured.
The pure metal layers forming the first bonding layer and the second bonding layer can be pure metal layers formed by alternately stacking the same metals, and the stacking sequence of the pure metals formed by the same metals can be the same or different; or the forming material of at least one layer of pure metal in the second bonding layer is different from the forming material of any layer of pure metal in the first bonding layer. Therefore, the selection range of pure metal for forming the first bonding layer and the second bonding layer is increased, and the design flexibility and adaptability of the bonding pad are increased.
The utility model provides a light-emitting component divide into first light-emitting component and second light-emitting component of restoration usefulness, and first light-emitting component's electrode structure includes first welding layer, and the electrode structure of restoreing light-emitting component includes second welding layer, and first welding layer and second welding layer are multilayer structure, and the multilayer structure of first pad and second pad has the same structural feature on this multilayer structure and the backplate, from this, adopt the utility model discloses a during light-emitting component, can guarantee equally that first light-emitting component does not take place the skew when welding restores light-emitting component, and then can guarantee light-emitting component's transfer yield.
The utility model discloses a display panel adopts the utility model discloses a backplate, light emitting component have good transfer yield, consequently, display panel has high volume production yield.
Drawings
Fig. 1 is a schematic structural diagram of a backplane for bonding light emitting elements according to an embodiment of the present invention.
Fig. 2 shows a schematic view of soldering LED chips on the back plate shown in fig. 1.
Fig. 3a is a schematic structural diagram illustrating a back plate for bonding light emitting devices according to an alternative embodiment of the first embodiment of the present invention.
Fig. 3b is a schematic structural diagram of a back plate for bonding light emitting elements according to another alternative embodiment of the first embodiment of the present invention.
Fig. 4 is a schematic structural diagram of a display panel according to a second embodiment of the present invention.
Fig. 5 is a schematic structural diagram of the light emitting device in the display panel shown in fig. 4.
Fig. 6a is a schematic structural diagram of a first light emitting element of a light emitting element according to a third embodiment of the present invention.
Fig. 6b is a schematic structural diagram of a repaired light emitting device, which is a light emitting device provided in the third embodiment of the present invention.
Fig. 7 is a schematic view illustrating a light emitting device provided in the third embodiment of the invention is soldered on a back plate.
Fig. 8 is a schematic structural diagram illustrating a repaired light emitting device of a light emitting device according to an alternative embodiment of the third embodiment of the present invention.
Fig. 9 is a schematic structural diagram of a repaired light-emitting device of a light-emitting device according to an alternative embodiment of the third embodiment of the present invention.
Fig. 10 is a schematic structural diagram of a display panel according to a fourth embodiment of the present invention.
Description of the element reference numerals
100. Back plate 3011 first light-emitting element
101. First pad 3012 repair light emitting element
1011. First adhesive layer 301-1 substrate
1012. First bonding layer 301-2 first semiconductor layer
1012-1 first pure metal layer 301-3 active layer
1012-2 second pure metal layer 301-4 second semiconductor layer
102. Second pad 301-5 insulating protective layer
1021. Second adhesive layer 301-6 electrode structure
1022. Second bonding layer 301-61 ohmic contact layer
1022-1 third pure metal layer 301-62 first bonding layer
1022-2 fourth pure Metal layer 301-621 sixth pure Metal layer
1022-3 fifth pure metal layers 301-622 seventh pure metal layer
1013. First alloy 3012-62 second solder layer
1023. Second alloy 3012-621 eighth pure metal layer
200. Display panel 3012-622 ninth pure metal layer
201. Back panels 3012-623 of tenth pure metal layer
202. Third alloy of light emitting elements 301 to 63
2021. Fourth alloy of first light emitting elements 301 to 64
2022. Repairing a light emitting device 302 backplane
202-1 substrate 3021 first pad
202-2 first semiconductor layer 3022 second pad
202-3 active layer 400 display Panel
202-4 second semiconductor layer 401 backplane
202-5 insulating protective layer 4011 first pad
202-6 electrode structure 4012 second pad
202-61 first electrode 402 light emitting element
202-62 second electrode
Detailed Description
The following description of the embodiments of the present invention is provided for illustrative purposes, and other advantages and effects of the present invention will be readily apparent to those skilled in the art from the disclosure herein. The present invention can also be implemented or applied through other different specific embodiments, and various details in the present specification can be modified or changed based on different viewpoints and applications without departing from the spirit of the present invention.
Example one
The present embodiment provides a back plate for bonding light emitting elements. As shown in fig. 1, the surface of the back plate 100 is provided with a first pad 101 and a second pad 102 for bonding a light emitting element, wherein the first pad 101 is used for soldering a first light emitting element 2021 (see fig. 2), i.e. a main light emitting element, transferred onto the back plate 100 for the first time; the second pads 102 serve as repair pads for solder-replacing repair light emitting elements 2022 (see fig. 2) of the main light emitting elements that are not normally operating. Referring also to fig. 1, the first pad 101 includes a first adhesive layer 1011 and a first bonding layer 1012, wherein the first bonding layer 1012 has a multi-layer structure. The second pad 102 includes a second adhesive layer 1021 and a second bonding layer 1022, wherein the second bonding layer 1022 is also a multilayer structure. In an alternative embodiment, the multilayer structure of the first bonding layer 1012 and the second bonding layer 1022 are both multilayer pure metal layers. For example, two, three, four or even more pure metal layers may be provided, the number of pure metal layers may be flexibly set according to the design requirements of the first pad 101 and the second pad 102, and the number of pure metal layers in the first bonding layer 1012 and the second bonding layer 1022 may be the same or different.
Referring to fig. 1, in an alternative embodiment, the first bonding layer 1012 includes a first pure metal layer 1012-1 and a second pure metal layer 1012-2, the first pure metal layer 1012-1 and the second pure metal layer 1012-2 are pure metal layers formed of different pure metals, and the melting point of the pure metal forming the first pure metal layer 1012-1 is higher than the melting point of the pure metal forming the second pure metal layer 1012-2. For example, the first pure metal layer 1012-1 may be a Sn metal layer and the second pure metal layer 1012-2 may be an In metal layer. The second bonding layer 1022 and the first bonding layer 1012 include the same number of pure metal layers, i.e., a third pure metal layer 1022-1 and a fourth pure metal layer 1022-2. In this embodiment, the third pure metal 1022-1, the first pure metal layer 1012-1, the fourth pure metal layer 1022-2, and the second pure metal layer 1012-2 are pure metal layers formed of the same pure metal, respectively, for example, the third pure metal layer 1022-1 is also an Sn metal layer, and the fourth pure metal layer 1022-2 is also an In metal layer. And the stacking sequence of pure metal layers formed by the same pure metal in the first bonding layer 1012 and the second bonding layer 1022 is the same, i.e., the second pure metal layer 1012-2 is located above the first pure metal layer 1012-1, and the fourth pure metal layer 1022-2 is located above the third pure metal layer 1022-1 as shown in fig. 1.
Alternatively, the thickness ratio of the high melting point pure metal layer and the low melting point pure metal layer is between 1 and 10, and in order to obtain different soldering temperatures, the high melting point pure metal layer and the low melting point pure metal layer have a first thickness ratio and a second thickness ratio in the first bonding layer 1012 and the second bonding layer 1022, respectively, and the first thickness ratio is greater than the second thickness ratio, that is, the first thickness ratio of the first pure metal layer 1012-1 and the second pure metal layer 1012-2 in the first bonding layer 1012 is not the same as the second thickness ratio of the third pure metal layer 1022-1 and the fourth pure metal layer 1022-2 in the second bonding layer 1022, and the first thickness ratio of the first pure metal layer 1012-1 and the second pure metal layer 1012-2 is greater than the second thickness ratio of the third pure metal layer 1022-1 and the fourth pure metal layer 1022-2. For example, optionally, the first thickness ratio is 10; alternatively, the first thickness ratio is 4:6, and the second thickness ratio is 1; alternatively, the first thickness ratio is 8:1 and the second thickness ratio is 2:1; alternatively, the first thickness ratio is 5:7 and the second thickness ratio is 3:8. The different thickness ratios are also indicative of different pure metal layers in the first bonding layer 1012 and the second bonding layer 1022. Since different metals have different melting points, by controlling the difference in the thickness ratio and controlling the content of the pure metal layer having a higher melting point in the first bonding layer 1012 to be greater than that in the second bonding layer 1022, it is possible to control the first bonding layer 1012 and the second bonding layer 1022 to have different bonding temperatures and make the bonding temperature of the second bonding layer 1022 lower than that of the first bonding layer 1012.
As described above, the first bonding layer 1012 and the second bonding layer 1022 have the above-described structural features such that the first bonding layer 1012 and the second bonding layer 1022 have different bonding temperatures, and the bonding temperature of the second bonding layer 1022 is lower than the bonding temperature of the first bonding layer 1012. As shown in fig. 2, taking the first thickness ratio of the first pure metal layer 1012-1 and the second pure metal layer 1012-2 in the first bonding layer 1012 as 10, and the second thickness ratio of the third pure metal layer 1022-1 and the fourth pure metal layer 1022-2 in the second bonding layer 1022 as 4:6 as an example, when the light emitting element is soldered on the backplane 100 shown in fig. 1, the first light emitting element 2021 is soldered first, and at this time, the first bonding layer 1012 on the first pad 101 has a higher melting start temperature of-200 ℃, and in view of this, after the first light emitting element 2021 is transferred to the backplane 100 once, thermal bonding is performed, and heating is performed to about 260 ℃, so as to ensure that the first bonding layer 1012 of the first bonding layer 101 is completely melted to form the first alloy 1013, thereby achieving sufficient thermal bonding of the first light emitting element 2021. The first bonding layer 1012 has a melting temperature of about 200 c for the first alloy 1013 formed by heating. Since the second bonding layer 1022 of the second pad 102 has a lower melting start temperature, during the heating process, the second bonding layer 1022 also completely melts and forms the second alloy 1023, and in view of the above structural design of the second bonding layer 1022 and the first bonding layer 1021, the second alloy 1023 formed by the second bonding layer 1022 has a lower melting temperature compared to the first alloy 1013, and in the present embodiment, the melting temperature of the second alloy 1023 is about 125 ℃. Therefore, after the repaired light-emitting element 2022 is transferred to the backplane 100, thermal bonding is performed again, and then the backplane 100 is heated to about 150 ℃ and lower than 200 ℃, so that the second alloy 1023 can be ensured to be completely melted, and the first alloy 1013 of the first bonding pad 101 can not be melted, thereby ensuring that the first light-emitting element 2021 can not be displaced or fall off, and ensuring that the repaired light-emitting element 2022 is fully bonded to the backplane 100.
In an alternative embodiment, after the first light emitting element 2021 is transferred to the backplane 100 once, thermal bonding is performed, and the backplane 100 is heated by local heating, that is, only the first pad 101 to which the first light emitting element 2021 is transferred is heated, and the first pad 101 is heated to about 260 ℃, so that the first bonding layer 1012 of the first pad 101 is completely melted to form the first alloy 1013, and sufficient thermal bonding of the first light emitting element 2021 is achieved. The first bonding layer 1012 has a melting temperature of about 200 c for the first alloy 1013 formed by heating. During the bonding of the first light emitting element 2021, the second bonding layer 1022 of the second bonding pad 102 is not melted or softened or is not completely melted, and the multi-layer pure metal layer structure or a part of the multi-layer pure metal layer structure is still maintained, because the second bonding pad 102 is not heated or is heated to a relatively small degree. When the repaired light emitting element 2022 needs to be bonded, after the repaired light emitting element 2022 is transferred to the backplane 100, thermal bonding is performed again, local heating is also performed, the second bonding pad 102 with the repaired light emitting element 2022 transferred is heated, the backplane 100 is heated to about 150 ℃ and lower than 200 ℃, and at this time, the second bonding layer 1022 can be ensured to be completely melted, and the first alloy 1013 of the first bonding pad 101 is not melted, so that the first light emitting element 2021 is ensured not to have risks of displacement or falling off, and meanwhile, the repaired light emitting element 2022 is ensured to be fully bonded to the backplane 100.
In addition, in this embodiment, the multi-layer pure metal layers of the first bonding layer 1012 and the second bonding layer 1022 are formed by using a vapor deposition method, in which pure metal is used as a vapor deposition metal source, the pure metal layer is obtained above the bonding layer (the first bonding layer 1011 or the second bonding layer 1021), different pure metal layers are obtained by selecting different vapor deposition metal sources, and the thickness of each pure metal layer can be precisely controlled, so that the multi-layer pure metal layer meeting the above structural requirements can be obtained.
In an alternative embodiment of the present embodiment, the first bonding layer 1012 and the second bonding layer 1022 include the same number of pure metal layers formed of the same pure metal, and the stacking order of the pure metal layers formed of the same pure metal in the first bonding layer 1012 and the second bonding layer 1022 is different. As shown In fig. 3a, the third pure metal layer 1022-1 of the second bonding layer 1022 and the first pure metal layer 1012-1 of the first bonding layer 1012, and the fourth pure metal layer 1022-2 of the second bonding layer 1022 and the second pure metal layer 1012-2 of the first bonding layer 1012 are pure metal layers formed of the same pure metal, respectively, for example, as described above, the first pure metal layer 1012-1 and the third pure metal layer 1022-1 may be Sn metal layers, and the second pure metal layer 1012-2 and the fourth pure metal layer 1022-2 may be In metal layers. However, in this alternative embodiment, as shown in fig. 3a, the third pure metal layer 1022-1 and the fourth pure metal layer 1022-2 in the second bonding layer 1022 are different from the first pure metal layer 1012-1 and the second pure metal layer 1012-2 in the first bonding layer 1012 in the stacking order, i.e., the second pure metal layer 1012-2 is located above the first pure metal layer 1012-1 and the fourth pure metal layer 1022-2 is located below the third pure metal layer 1022-1 in fig. 3 a. The stacking sequence of the multiple pure metal layers can also meet the requirements of different bonding temperatures, and meanwhile, the design flexibility of the bonding pad is improved.
As described above, the multiple metal layers in the first bonding layer 1012 and the second bonding layer 1022 are pure metal layers formed of the same metal, respectively, and it can be understood that, according to the eutectic theory of metals, the first bonding layer 1012 and the second bonding layer 1022 may include pure metal layers formed of different metals, for example, the material of at least one pure metal layer in the second bonding layer 1022 is different from the material of any pure metal layer in the first bonding layer 1012. Alternatively, the first bonding layer 1012 includes a Sn layer and a Zn layer and the second bonding layer 1022 includes a Sn layer and an In layer, or the first bonding layer 1012 includes an Ag layer and a Zn layer and the second bonding layer 1022 includes a Bi layer and a Sn layer. It is only necessary that the bonding temperature of the first bonding layer 1012 is higher than that of the second bonding layer 1022.
In another optional embodiment of this embodiment, the first bonding layer 1012 and the second bonding layer 1022 have different numbers of pure metal layers, and the pure metal layers of the first bonding layer 1012 and the second bonding layer 1022 may be multiple pure metal layers formed by the same pure metal or may include multiple pure metal layers formed by different pure metals. As shown in fig. 3b, the first bonding layer 1012 includes a first pure metal layer 1012-1 and a second pure metal layer 1012-2, and the second bonding layer 1022 includes a third pure metal layer 1022-1, a fourth pure metal layer 1022-2, and a fifth pure metal layer 1022-3. In an alternative embodiment, the first and second pure metal layers 1012-1 and 1012-2 may be a Sn layer and an Ag layer, respectively, and the third, fourth, and fifth pure metal layers 1022-1, 1022-2, and 1022-3 are a Sn layer, an In layer, and a Bi layer, respectively.
In this embodiment, the pure metal layers in the first bonding layer 1012 and the second bonding layer 1022 may be selected from the combinations shown in table 1 below, and the stacking order may be changed according to actual needs.
TABLE 1 pure metal layer combination of first and second bonding layers
As shown in table 1 above, only the combination of the pure metal layers of the first bonding layer 1012 and the second bonding layer 1022 is exemplarily shown, and the combination is merely exemplary, and although the first bonding layer 1012 only shows the combination of two pure metal layers, it is understood that the first bonding layer 1012 may also include three or more pure metal layers, and likewise, the second bonding layer 1022 may also include three or more pure metal layers, and the pure metal layers of the first bonding layer 1012 and the second bonding layer 1022 may be arbitrarily combined under the condition that the bonding temperature is satisfied.
Example two
As shown in fig. 4, the display panel 200 of the present embodiment includes a back plate 201 and a light emitting device 202 disposed above the back plate 201. As shown in fig. 4, the back plate 201 includes a first pad 101 and a second pad 102. The first pad 101 includes a first adhesive layer 1011 (see fig. 1) and a first alloy 1013. The light emitting element 202 includes a first light emitting element 2021 fixed to the first pad 101, and the first light emitting element 2021 is bonded to the first pad 101 via a first alloy 1013. As described in connection with the first embodiment, the first light emitting element 2021 is fixed to the first pad 101 at the first bonding temperature by the first alloy 1013 formed after being heated by the first bonding layer 1012. In an alternative embodiment, the first bonding layer 1012 includes multiple pure metal layers formed of metals having different melting points, for example, the first bonding layer 1012 has the structural features of the first bonding layer 1012 described in the first embodiment. When the backplate 201 is heated to solder the first light emitting element 2021, the multiple pure metal layers of the first bonding layer 1012 melt to form the first alloy 1013, fixing the first light emitting element 2021 to the backplate 201 at the first pad 101. In another alternative embodiment, a uniform alloy solder is formed above the first adhesive layer 1011, and when the backboard 201 is heated to solder the first light emitting element 2021, the alloy solder melts to form the first alloy 1013, so as to fix the first light emitting element 2021 to the first pad 101 of the backboard 201.
In this embodiment, the second pad 102 includes a second adhesive layer 1021 (see fig. 1) and a second bonding layer 1022, where the second bonding layer 1022 is a multi-layer structure, and the multi-layer structure is a multi-layer pure metal layer, for example, 2 layers, 3 layers, or even more, and the metal forming the pure metal layer may be selected from the metals shown in table 1 in the first embodiment. And the second bonding layer 1022 formed of multiple pure metal layers has a lower melting temperature than the first alloy 1013.
Referring also to fig. 4, the light emitting elements 202 of the display panel 200 may further include at least one repair light emitting element 2022, and the repair light emitting element 2022 is used to replace the damaged or abnormally lighted first light emitting element 2021 on the back plate 201. At least one repair light emitting element 2022 is soldered to at least one second pad 102 via a second alloy 1023. As described above, since the second bonding layer 1022 has a lower melting temperature than the first alloy 1013, that is, the second bonding temperature of the second bonding layer 1022 is lower than the temperature at which the first alloy 1013 starts to melt, after the at least one repair light emitting element 2022 is transferred to the at least one second pad 102, the at least one second pad 102 is heated at the second bonding temperature until the pure metal layers of the second bonding layer 1022 are completely melted, the melted second bonding layer 1022 forms the second alloy 1023, and after the heating is stopped, the second alloy 1023 fixes the repair light emitting element 2022 to the second pad 102. In this process, the second bonding layer 1022 having a multilayer structure still remains on the second pad 102 of the non-transferred repair light emitting element 2022. Therefore, the second pads 102 on the back plate 201 of the display panel 200 have two forms: in one form, the second pad 102 includes a second bonding layer 1021 and a second bonding layer 1022 having a multilayer structure; in another form, the second pad 102 includes a second bonding layer 1021 and a second alloy 1023. In the process of repairing the light emitting element 2022 by soldering, the first alloy 1013 is not softened or melted, so that the first light emitting element 2021 on the first pad 101 is not displaced or separated, and the stability of the first light emitting element 2021 is not affected, thereby ensuring the overall yield of the display panel 200.
In an alternative embodiment, the second pad 102 includes a second bonding layer 1021 (see fig. 1) and a second alloy 1023, and the second alloy 1023 is a uniform alloy solder formed over the second bonding layer 1021. The uniform alloy solder also has a melting temperature lower than that of the first alloy 1013, so that the first alloy 1013 is also not softened or melted when bonding for repairing the light-emitting element 2022, so as to ensure that the first light-emitting element 2021 on the first pad 101 is not displaced or separated, and the stability of the first light-emitting element 2021 is not affected, thereby ensuring the overall yield of the display panel 200.
The second bonding layer 1022 of the multi-layer structure has a higher melting start temperature relative to the second alloy 1023 formed by the uniform alloy solder, so that the second bonding layer has better thermal stability in the soldering process of the first light-emitting element 2021, and does not soften or melt due to the thermal bonding of the first light-emitting element 2021, thereby ensuring the integrity and stability of the second bonding pad 102.
As shown in fig. 5, in the present embodiment, the light emitting element 202 is an LED chip, and the LED chip includes a substrate 202-1, a first semiconductor layer 202-2 formed on the substrate 202-1, a second semiconductor layer 202-4 having a conductivity type opposite to that of the first semiconductor layer 202-2, and an active layer 202-3 located between the first semiconductor layer 202-2 and the second semiconductor layer 202-4, where the active layer 202-3 is a light emitting layer of the light emitting element 202, and further includes an insulating protection layer 202-5 formed on a surface of the light emitting element 202. The first semiconductor layer 202-2 may be an N-type semiconductor layer, and the second semiconductor layer 202-4 may be a P-type semiconductor layer. Of course, it is also possible that the first semiconductor layer 202-2 is a P-type semiconductor layer and the second semiconductor layer 202-4 is an N-type semiconductor layer. In an alternative embodiment, the first semiconductor layer 202-2 may be an N-type GaN layer, the active layer 202-3 is a quantum well layer, and the second semiconductor layer 202-4 is a P-type GaN layer. Or the first semiconductor layer 202-2 may be an N-type GaN layer, such as a Si-doped GaN layer; the active layer 202-3 may be an InGaN/GaN multiple quantum well and the second semiconductor layer 202-4 is a p-type GaN layer, such as an Mg-doped GaN layer.
Referring also to fig. 5, the LED chip of the present embodiment further includes an electrode structure 202-6, and the light emitting element 202 is fixed to the first pad 101 or the second pad 102 of the back plate 201 through the electrode structure 202-6. The electrode structure 202-6 includes a first electrode 202-61 and a second electrode 202-62, the first electrode 202-61 is connected to the first semiconductor layer 202-2, and the second electrode 202-62 is connected to the second semiconductor layer 202-4. Referring also to fig. 5, the first semiconductor layer 202-2 may be formed with a mesa on which a metal material, such as Au, ag, al, cu, zn, etc., is deposited to form the above-described first electrode 202-61. Similarly, second electrodes 202-62 are formed by depositing, for example, au, ag, al, cu, etc., over the second semiconductor layer 202-4. It is to be understood that a transparent conductive layer, a current blocking layer, and the like may be formed above the second semiconductor layer 202-4.
EXAMPLE III
The present embodiment provides a light emitting element for a display panel, which includes a first light emitting element 3011 serving as a main light emitting element of the display panel, and a repair light emitting element 3012 for repairing the first light emitting element 3011 which cannot be normally lit in the substitute display panel, as shown in fig. 6a and 6 b.
In this embodiment, the first light emitting element 3011 and the repair light emitting element 3012 are both LED chips. Referring also to fig. 6a and 6b, the LED chip includes a substrate 301-1, a first semiconductor layer 301-2 formed on the substrate 301-1, a second semiconductor layer 301-4 having a conductivity type opposite to that of the first semiconductor layer 301-2, and an active layer 301-3 located between the first semiconductor layer 301-2 and the second semiconductor layer 301-4, the active layer 301-3 being a light emitting layer of the LED chip, and an insulating protection layer 301-5 formed on a surface of the LED chip. The first semiconductor layer 301-2 may be an N-type semiconductor layer, and the second semiconductor layer 301-4 may be a P-type semiconductor layer. Of course, it is also possible that the first semiconductor layer 301-2 is a P-type semiconductor layer and the second semiconductor layer 301-4 is an N-type semiconductor layer. In an alternative embodiment, the first semiconductor layer 301-2 may be an N-type GaN layer, the active layer 301-3 may be a quantum well layer, and the second semiconductor layer 301-4 may be a P-type GaN layer. Or the first semiconductor layer 301-2 may be an N-type GaN layer, for example, a Si-doped GaN layer; the active layer 301-3 may be an InGaN/GaN multiple quantum well and the second semiconductor layer 301-4 is a p-type GaN layer, for example, a Mg-doped GaN layer. Referring to fig. 6a and 6b as well, the first light emitting element 3011 and the repair light emitting element 3012 of the present embodiment further include electrode structures 301-6, and the first light emitting element 3011 and the repair light emitting element 3012 are respectively fixed to the back plate 302 through the electrode structures 301-6 (see fig. 7).
Referring to fig. 6a, the electrode structure 301-6 of the first light emitting device 3011 includes ohmic contact layers 301-61 and first bonding layers 301-62, and the ohmic contact layers 301-61 are formed on the first semiconductor layer 301-2 and the second semiconductor layer 301-4, respectively, to form ohmic contacts. First solder layers 301-62 are formed over the ohmic contact layers 301-61 on the first and second semiconductor layers 301-2 and 301-4, respectively, for soldering the LED chip to a pad of the back plate 302 (see fig. 7) and achieving electrical connection. The first solder layers 301-62 are multi-layered structures, preferably multi-layered pure metal layers. As illustrated in fig. 6a, the first solder layer 301-62 includes a sixth pure metal layer 301-621 and a seventh pure metal layer 301-622, the sixth pure metal layer 301-621 and the seventh pure metal layer 301-622 are pure metal layers formed of different pure metals, and the melting point of the sixth pure metal layer 301-621 is higher than that of the seventh pure metal layer 301-622. For example, the sixth pure metal layers 301-621 may be Sn metal layers, and the seventh pure metal layers 301-622 may be In metal layers.
Referring to fig. 6b, the electrode structure 301-6 of the repaired light emitting device 3012 includes ohmic contact layers 301-61 and second bonding layers 3012-62, and the ohmic contact layers 301-61 are formed on the first semiconductor layer 301-2 and the second semiconductor layer 301-4, respectively, to form ohmic contacts. The second solder layers 3012 to 62 are formed over the ohmic contact layers 301 to 61 on the first semiconductor layer 301 to 2 and the second semiconductor layer 301 to 4, respectively, for soldering the repair light emitting element 3012 to a repair pad of the back sheet 302 (see fig. 7) and achieving electrical connection. In this embodiment, second bonding layers 3012-62 are also multi-layer structures, preferably multi-layer pure metal layers. As illustrated in fig. 6b, second solder layers 3012-62 have the same number of pure metal layers as first solder layers 301-62, and as shown in fig. 6b, second solder layers 3012-62 include eighth pure metal layers 3012-621 and ninth pure metal layers 3012-622. In this embodiment, the eighth pure metal layers 3012 to 621 and the sixth pure metal layers 301 to 621, and the ninth pure metal layers 3012 to 622 and the seventh pure metal layers 301 to 622 are pure metal layers formed of the same pure metal, respectively, for example, in the repair light emitting element 3012, the eighth pure metal layers 3012 to 621 are also Sn metal layers, and the ninth pure metal layers 3012 to 622 are also In metal layers. And the stacking order of the pure metal layers formed of the same metal in the second solder layers 3012 to 62 and the first solder layers 301 to 62 is the same. That is, as shown in FIGS. 6a and 7, the first solder layers 301-62 sequentially overlap the sixth pure metal layers 301-621 and the seventh pure metal layers 301-622, and the second solder layers 3012-62 sequentially overlap the eighth pure metal layers 3012-621 and the ninth pure metal layers 3012-622 in a direction gradually away from the ohmic contact layers 301-61.
Alternatively, the thickness ratio of the high melting point pure metal layer and the low melting point pure metal layer is between 1 and 10, and in order to obtain different soldering temperatures, the high melting point pure metal layer and the low melting point pure metal layer have a third thickness ratio and a fourth thickness ratio in the first soldering layers 301 to 62 and the second soldering layers 3012 to 62, respectively, and the third thickness ratio is greater than the fourth thickness ratio, that is, the third thickness ratio of the sixth pure metal layers 301 to 621 and the seventh pure metal layers 301 to 622 of the first soldering layers 301 to 62 is not the same as the fourth thickness ratio of the eighth pure metal layers 3012 to 621 and the ninth pure metal layers 3012 to 622 of the second soldering layers 3012 to 62, and the third thickness ratio of the sixth pure metal layers 301 to 621 and the seventh pure metal layers 301 to 622 is greater than the fourth thickness ratio of the eighth pure metal layers 3012 to 622 of the ninth pure metal layers 3012 to 622. For example, optionally, the third thickness ratio is 10; alternatively, the third thickness ratio is 4:6, and the fourth thickness ratio is 1; alternatively, the third thickness ratio is 8:1 and the fourth thickness ratio is 2:1; alternatively, the third thickness ratio is 5:7 and the fourth thickness ratio is 3:8. The different thickness ratios are also indicative of different pure metal layers in the first solder layers 301-62 or the second solder layers 3012-62, and the different metal layers have different melting points, so that by controlling the different thickness ratios, the first solder layers 301-62 and the second solder layers 3012-62 can be controlled to have different bonding temperatures, and the bonding temperature of the second solder layers 301-62 can be lower than the bonding temperature of the first solder layers 301-62.
As described above, the first solder layers 301 to 62 of the first light emitting element 3011 and the second solder layers 3012 to 62 of the repair light emitting element 3012 have the above-described structural characteristics such that the first solder layers 301 to 62 and the second solder layers 3012 to 62 have different bonding temperatures, and the bonding temperatures of the second solder layers 3012 to 62 are lower than the bonding temperatures of the first solder layers 301 to 62. As shown in fig. 7, when the light emitting element is soldered to the rear plate 302, the first light emitting element 3011 is first transferred to the first pad 3021 of the rear plate 302. The first soldering layers 301-62 of the first light emitting element 3011 have a higher melting start temperature of 200 ℃, and therefore, the first light emitting element 3011 is thermally bonded and heated to about 260 ℃, so that the first soldering layers 301-62 of the first light emitting element 3011 are completely melted to form the third alloys 301-63, and the first light emitting element 3011 is fully thermally bonded. The melting temperature of the third alloy 301-63 formed by heating the first solder layers 301-62 is approximately 200 c.
In connection with soldering of the repair light emitting element 3012, the repair light emitting element 3012 is first heated, during which heating the second solder layers 3012 to 62 also completely melt and form the fourth alloy 301 to 64, since the second solder layers 3012 to 62 have a lower melting temperature, which fourth alloy 301 to 64 formed by the second solder layers 3012 to 62 has a lower melting temperature than the third alloy 301 to 63 formed by the first solder layers 301 to 62, in view of the above-mentioned structural design of the second solder layers 3012 to 62 and the first solder layers 301 to 62. In this embodiment, the fourth alloy 301-64 has a melting temperature of approximately 125 ℃. After the fourth alloy 301-64 is formed, the repaired light emitting device 3012 is transferred to the second bonding pad 3022 of the backplane 302 for repair, and then thermal bonding is performed again, at this time, the fourth alloy 301-64 is heated to about 150 ℃ and lower than 200 ℃, so that the fourth alloy 301-64 can be completely melted, and the third alloy 301-63 formed by the first solder layer 301-62 can not be melted, thereby ensuring that the first light emitting device 3011 does not have the risk of displacement or falling off, and simultaneously ensuring that the repaired light emitting device 3012 is fully bonded to the backplane 302.
In addition, in the embodiment, the multilayer pure metal layers of the first welding layers 301 to 62 and the second welding layers 3012 to 62 are formed by using a vapor deposition method, the method takes pure metal as a vapor deposition metal source, pure metal layers are obtained above the ohmic contact layers 301 to 61, different pure metal layers are obtained by selecting different vapor deposition metal sources, and the thickness of each pure metal layer can be accurately controlled, so that the multilayer pure metal layers meeting the structural requirements can be obtained.
In an alternative embodiment of this embodiment, first solder layers 301-62 and second solder layers 3012-62 comprise the same number of pure metal layers formed of the same pure metal, with the pure metal layers formed of the same pure metal being stacked in a different order in first solder layers 301-62 and second solder layers 3012-62. As shown In fig. 8, referring to fig. 6a, the eighth pure metal layers 3012 to 621 of the second bonding layers 3012 to 62 and the sixth pure metal layers 301 to 621 of the first bonding layers 301 to 62, the ninth pure metal layers 3012 to 622 of the second bonding layers 3012 to 62 and the seventh pure metal layers 301 to 622 of the first bonding layers 301 to 62 are pure metal layers formed of the same pure metal, respectively, for example, as described above, the sixth pure metal layers 301 to 621 and the eighth pure metal layers 3012 to 621 may be Sn metal layers, and the seventh pure metal layers 301 to 622 and the ninth pure metal layers 3012 to 622 may be In metal layers. In this alternative embodiment, however, as shown in fig. 8, the eighth and ninth pure metal layers 3012-621 and 3012-622 of the second solder layers 3012-62 are stacked in a different order than the sixth and seventh pure metal layers 301-621 and 301-622 of the first solder layers 301-62, i.e., as shown in fig. 6a and 9, the first solder layers 301-62 sequentially stack the sixth and seventh pure metal layers 301-621 and 301-622 of the first solder layers 301-62, and the second solder layers 3012-62 sequentially stack the ninth and eighth pure metal layers 3012-622 and 3012-621 of the first solder layers 301-61 in a direction progressively away from the ohmic contact layers 301-61. The stacking sequence of the multiple pure metal layers can also meet the requirements of different bonding temperatures, and meanwhile, the design flexibility of the electrode structure 301-6 is increased.
As described above, the plurality of metal layers In the first and second solder layers 301 to 62 and 3012 to 62 are pure metal layers formed of the same metal, respectively, it is understood that the first and second solder layers 301 to 62 and 3012 to 62 may include pure metal layers formed of different metals, for example, at least one of the pure metal layers of the second solder layers 3012 to 62 may be formed of different materials from any of the pure metal layers of the first solder layers 301 to 62, for example, the first solder layers 301 to 62 may include Sn layers and Zn layers and the second solder layers 3012 to 62 may include Sn layers and In layers, or the first solder layers 301 to 62 may include Ag layers and Zn layers and the second solder layers 3012 to 62 may include Bi layers and Sn layers, according to the eutectic theory of metals. It is only necessary that the bonding temperature of the first solder layers 301-62 and is higher than the bonding temperature of the second solder layers 3012-62 and.
In an alternative embodiment of this embodiment, first solder layers 301-62 and second solder layers 3012-62 have different numbers of pure metal layers, and the pure metal layers of first solder layers 301-62 and second solder layers 3012-62 may be multiple pure metal layers formed of the same pure metal or multiple pure metal layers formed of different pure gold. As shown in FIG. 9, the first solder layers 301-62 include sixth pure metal layers 301-621 and seventh pure metal layers 301-622, and the second solder layers 3012-62 include eighth pure metal layers 3012-621, ninth pure metal layers 3012-622 and tenth pure metal layers 3012-623. In alternative embodiments, the sixth pure metal layers 301-621 and the seventh pure metal layers 301-622 may be a Sn layer and an Ag layer, respectively, and the eighth pure metal layers 3012-621, the ninth pure metal layers 3012-622, and the tenth pure metal layers 3012-623 are a Sn layer, an In layer, and a Bi layer, respectively.
In this embodiment, the pure metal layers in the first solder layers 301-62 and the second solder layers 3012-62 can also be selected from the combinations shown in table 1 in embodiment one, and the stacking order can be changed according to actual needs. Also, it is understood that first solder layers 301-62 may include three or more pure metal layers, and similarly, second solder layers 3012-62 may include three or more pure metal layers, and the multiple pure metal layers of first solder layers 301-62 and second solder layers 3012-62 may be combined arbitrarily under the condition that the bonding temperature is satisfied.
Example four
As shown in fig. 10, the display panel 400 of the present embodiment includes a back plate 401 and a light emitting device 402 disposed above the back plate 401. As shown in fig. 10, the backplane 401 includes a first pad 4011 and a second pad 4012 formed on the backplane 401. The light-emitting element 402 is the light-emitting element provided in the third embodiment, that is, includes the first light-emitting element 3011 fixed to the first pad 4011. The display panel 400 may further include at least one repair light emitting element 3012 fixed to the at least one second pad 4012. In this embodiment, the first light emitting element 3011 and the repair light emitting element 3012 are soldered to the back plate 401 by the soldering process described in the third embodiment shown in fig. 7. The first light emitting element 3011 is fixed to the first pad 4011 at a first bonding temperature through the third alloy 301 to 63 formed by heating the first solder layers 301 to 62, and the repair light emitting element 3012 is fixed to the second pad 4012 at a second bonding temperature through the fourth alloy 301 to 64 formed by heating the second solder layers 3012 to 62. As described above, third alloys 301-63 are formed by heating first bonding layers 301-62, fourth alloys 301-64 are formed by heating second bonding layers 3012-62, and first bonding layers 301-62 and second bonding layers 3012-62 have the structural designs described in example three, such that the first bonding temperature is higher than the second bonding temperature. Therefore, the bonding process of repairing the light emitting element 3012 does not affect the stability of the first light emitting element 3011, thereby ensuring the overall yield of the display panel 400.
The above embodiments are merely illustrative of the principles and effects of the present invention, and are not intended to limit the present invention. Modifications and variations can be made to the above-described embodiments by those skilled in the art without departing from the spirit and scope of the present invention. Accordingly, it is intended that all equivalent modifications or changes which may be made by those skilled in the art without departing from the spirit and technical spirit of the present invention be covered by the claims of the present invention.
Claims (12)
1. A backboard for bonding a light-emitting element is characterized in that a first bonding pad and a second bonding pad for bonding the light-emitting element are arranged on the surface of the backboard, the second bonding pad is used as a repair bonding pad, the first bonding pad comprises a first bonding layer and a first bonding layer, the second bonding pad comprises a second bonding layer and a second bonding layer, the first bonding layer and the second bonding layer are both of a multilayer structure, the multilayer structure comprises multiple pure metal layers, and the bonding temperature of the first bonding layer is higher than that of the second bonding layer.
2. The backsheet according to claim 1, wherein the first and second bonding layers have the same number of layers of pure metal or the first and second bonding layers have different numbers of layers of pure metal.
3. A back sheet according to claim 1 or 2, wherein the first bonding layer comprises at least two pure metal layers formed of different metals and the second bonding layer comprises at least two pure metal layers formed of different metals.
4. A backplane according to claim 3, characterized in that the first and second bonding layers each comprise an alternating stack of layers of pure metal formed of a first metal and a second metal, and in that the first metal has a higher melting point than the second metal.
5. The backsheet according to claim 4, wherein the first metal and the second metal form a pure metal layer having a thickness ratio of 1.
6. The backsheet according to claim 5, wherein the pure metal layer of the first metal and the second metal has a first thickness ratio in the first bonding layer, the pure metal layer of the first metal and the second metal has a second thickness ratio in the second bonding layer, and the first thickness ratio is larger than the second thickness ratio.
7. A backplane according to claim 4, characterized in that the stacking order of the plurality of pure metal layers in the first and second bonding layers is different.
8. A backplane according to claim 3, wherein at least one of the plurality of pure metal layers of the second bonding layer is formed from a material different from a material of any of the plurality of pure metal layers of the first bonding layer.
9. A display panel, comprising:
the packaging structure comprises a backboard, wherein a first bonding pad and a second bonding pad are formed on the backboard, the first bonding pad comprises a first bonding layer and a first alloy, the second bonding pad comprises a second bonding layer and a second bonding layer, the second bonding layer is of a multilayer structure, and the multilayer structure comprises a plurality of pure metal layers; and
a light emitting element fixed on the back plate, the light emitting element including a first light emitting element soldered to the first pad via the first alloy, and a temperature at which the first alloy starts to melt is higher than a bonding temperature of the second bonding layer.
10. The display panel according to claim 9, wherein the light emitting element further comprises a repair light emitting element, and the repair light emitting element is soldered to at least one of the second pads via a second alloy.
11. The display panel according to claim 9, wherein the light-emitting element comprises:
a semiconductor structure including a first semiconductor layer, a second semiconductor layer, and a light emitting layer between the first semiconductor layer and the second semiconductor layer, the first semiconductor layer and the second semiconductor layer having opposite conductivity types;
and the electrode structure comprises a first electrode and a second electrode, the first electrode is in conductive connection with the first semiconductor layer, the second electrode is in conductive connection with the second semiconductor layer, and the light-emitting element is welded to the back plate through the electrode structure.
12. A light-emitting element for a display panel, wherein the light-emitting element is divided into a first light-emitting element and a repair light-emitting element for replacing the first light-emitting element which cannot be normally lit in the display panel, the light-emitting element includes a semiconductor structure and an electrode structure formed on a surface of the semiconductor structure, the electrode structure of the first light-emitting element includes a first solder layer, the electrode structure of the repair light-emitting element includes a second solder layer, the first solder layer and the second solder layer are each a multilayer structure, the multilayer structure includes a plurality of pure metal layers, and a bonding temperature of the first solder layer is higher than a bonding temperature of the second solder layer.
Priority Applications (3)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202221308245.7U CN218123408U (en) | 2022-05-26 | 2022-05-26 | Display panel and light-emitting element and back plate used for same |
| PCT/CN2023/072610 WO2023226457A1 (en) | 2022-05-26 | 2023-01-17 | Display panel, and light-emitting element and back plate for use in display panel |
| US18/114,284 US20230387357A1 (en) | 2022-05-26 | 2023-02-27 | Display panel, and light-emitting elements and backplate for display panel |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202221308245.7U CN218123408U (en) | 2022-05-26 | 2022-05-26 | Display panel and light-emitting element and back plate used for same |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN218123408U true CN218123408U (en) | 2022-12-23 |
Family
ID=84514612
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN202221308245.7U Active CN218123408U (en) | 2022-05-26 | 2022-05-26 | Display panel and light-emitting element and back plate used for same |
Country Status (2)
| Country | Link |
|---|---|
| CN (1) | CN218123408U (en) |
| WO (1) | WO2023226457A1 (en) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| WO2023226457A1 (en) * | 2022-05-26 | 2023-11-30 | 厦门市芯颖显示科技有限公司 | Display panel, and light-emitting element and back plate for use in display panel |
Family Cites Families (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US10020420B2 (en) * | 2015-08-18 | 2018-07-10 | Goertek Inc. | Repairing method, manufacturing method, device and electronic apparatus of micro-LED |
| US10593853B1 (en) * | 2019-01-30 | 2020-03-17 | Mikro Mesa Technology Co., Ltd. | Method for binding micro device on substrate |
| US11508704B2 (en) * | 2019-12-17 | 2022-11-22 | Seoul Viosys Co., Ltd. | Method of repairing light emitting device and display panel having repaired light emitting device |
| CN114121868A (en) * | 2020-08-28 | 2022-03-01 | 京东方科技集团股份有限公司 | Substrate and manufacturing method thereof, display device and manufacturing method thereof |
| CN218123408U (en) * | 2022-05-26 | 2022-12-23 | 厦门市芯颖显示科技有限公司 | Display panel and light-emitting element and back plate used for same |
-
2022
- 2022-05-26 CN CN202221308245.7U patent/CN218123408U/en active Active
-
2023
- 2023-01-17 WO PCT/CN2023/072610 patent/WO2023226457A1/en unknown
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| WO2023226457A1 (en) * | 2022-05-26 | 2023-11-30 | 厦门市芯颖显示科技有限公司 | Display panel, and light-emitting element and back plate for use in display panel |
Also Published As
| Publication number | Publication date |
|---|---|
| WO2023226457A1 (en) | 2023-11-30 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| US11784290B2 (en) | Light-emitting device with improved flexural resistance and electrical connection between layers, production method therefor, and device using light-emitting device | |
| CN100487931C (en) | Semiconductor light emitting element, manufacturing method and mounting method of the same and light emitting device | |
| KR100616415B1 (en) | Alternate current type light-emitting diode | |
| TWI455665B (en) | Flip-chip light emitting diode on board module and method of fabricating the same | |
| US11304349B2 (en) | Method for repairing a light-emitting unit, method for repairing a semiconductor chip, and method for manufacturing an LED module | |
| CN111373554B (en) | Micro LED chip, display panel and welding method of Micro LED chip | |
| CN218123408U (en) | Display panel and light-emitting element and back plate used for same | |
| US9048388B2 (en) | Multi-layer thermoelectric module and method for fabricating the same | |
| CN105591003A (en) | LED chip electrode and manufacture method thereof | |
| WO2016194370A1 (en) | Light-emitting module | |
| US20230387357A1 (en) | Display panel, and light-emitting elements and backplate for display panel | |
| JP4917375B2 (en) | Power semiconductor module manufacturing method | |
| CN103165782A (en) | Flip-chip light emitting diode and manufacturing method and application thereof | |
| US8836119B2 (en) | Semiconductor device | |
| CN103165783A (en) | Flip-chip light emitting diode and manufacturing method and application thereof | |
| CN111129275A (en) | Inverted micro light-emitting diode for maintenance and method for repairing module by using inverted micro light-emitting diode | |
| CN100446633C (en) | Lighting element with composite base plate | |
| US20230411578A1 (en) | Micro-electronic component, bonding backplate and bonding assembly | |
| US20240047635A1 (en) | Light-emitting device, backplate assembly and display panel | |
| CN113451490B (en) | Bonding method, display back plate and display back plate manufacturing system | |
| WO2023070551A1 (en) | Light-emitting device, light-emitting module and manufacturing method therefor | |
| US20230121505A1 (en) | Electronic device, electronic element soldering method and light-emitting diode display manufacturing method | |
| TWI617053B (en) | Light emitting diode structure | |
| TWI531087B (en) | Light emitting diode structure | |
| TWI578566B (en) | Light emitting diode structure |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| GR01 | Patent grant | ||
| GR01 | Patent grant |