CN218089788U

CN218089788U - Preparation device for growing multilayer heterojunction by CVD method

Info

Publication number: CN218089788U
Application number: CN202222160091.8U
Authority: CN
Inventors: 崔海; 谢莉华; 卜俊恩; 谭思佳; 谢姗
Original assignee: Anhui Yanling Technology Co ltd
Current assignee: Anhui Yanling Technology Co ltd
Priority date: 2022-08-17
Filing date: 2022-08-17
Publication date: 2022-12-20
Anticipated expiration: 2032-08-17

Abstract

The utility model belongs to the technical field of the nano-material preparation, especially, be CVD method growth multilayer heterojunction's preparation facilities, the preparation facilities to current CVD method growth multilayer heterojunction is not convenient for highly adjust heating device, make it to carry out the problem of accurate control to heating temperature, the following scheme is put forward now, it includes the chassis, hot plate and conveying ring, the top fixed mounting on chassis has stand and motor, the rotary drum has been cup jointed in the outside rotation of stand, a plurality of bracing pieces of outside fixedly connected with of rotary drum, the equal fixed connection in the bottom of conveying ring in top of a plurality of bracing pieces, and the top fixed mounting of stand has the fixed plate, the mounting hole has been seted up at the top of fixed plate, the lead screw is installed in the mounting hole rotation. The utility model discloses a mutually supporting between mounting panel, lead screw, knob, locating lever and the diaphragm can realize the high regulation to CVD method growth multilayer heterojunction's preparation facilities heating device to satisfy not equidimension heating work.

Description

Preparation device for growing multilayer heterojunction by CVD method

Technical Field

The utility model relates to a nano-material preparation technical field especially relates to a preparation facilities of CVD method growth multilayer heterojunction.

Background

Graphene, the most popular two-dimensional material in recent years, has been studied for over ten years since it was successfully exfoliated. Graphene is a cellular planar thin film formed by carbon atoms in an sp2 hybridization manner, and has many excellent characteristics such as ultra-high electron mobility, ultra-high tensile strength and elastic modulus, ultra-high electrothermal properties, and approximate transparency. Hexagonal boron nitride has recently received attention from many research groups as "white graphene". It has a graphene-like layered structure, but is an insulating material with an energy band width of up to 5.9eV. The preparation method for growing graphene and hexagonal boron nitride together into a heterojunction is still mainly CVD (chemical vapor deposition).

The device for CVD growth of the multilayer heterojunction, which aims at the problem of the Chinese patent publication with the publication number of CN206940981U, has the technical points that: the device comprises a CVD growth chamber and a transmission device, wherein the bottom of the chamber is loaded with a substrate copper foil, and a heating device is arranged above the substrate copper foil, so that a high-temperature growth area is formed between the substrate copper foil and the heating device; the transmission device is arranged in the CVD growth chamber and comprises a stepping motor and a conveyor belt, and the surface of the conveyor belt is wrapped with copper foil; the conveying belt is connected with the stepping motor through a connecting mechanism, so that the conveying belt rotates under the control of the stepping motor, and the conveying belt wrapped with the copper foil penetrates through the high-temperature growth area.

The scheme is inconvenient for adjusting the height of the heating device, so that the heating temperature is difficult to accurately control; therefore, we propose a fabrication apparatus for growing a multilayer heterojunction by CVD method to solve this problem.

SUMMERY OF THE UTILITY MODEL

The utility model aims at solving the problem that the preparation device for growing multilayer heterojunction by the existing CVD method is not convenient for adjusting the height of the heating device, so that the heating temperature is difficult to be accurately controlled, and the provided preparation device for growing multilayer heterojunction by the CVD method.

In order to realize the purpose, the utility model adopts the following technical scheme:

CVD method growth multilayer heterojunction's preparation facilities, including chassis, hot plate and conveying ring, the top fixed mounting on chassis has stand and motor, and the outside of stand is rotated and has been cup jointed the rotary drum, a plurality of bracing pieces of outside fixedly connected with of rotary drum, and the equal fixed connection in top of a plurality of bracing pieces is in the bottom of conveying ring, and the top fixed mounting of stand has a fixed plate, and the mounting hole has been seted up at the top of fixed plate, rotates in the mounting hole and installs the lead screw, and the bottom fixed mounting of lead screw has the knob, the top fixed mounting of hot plate has the mounting panel, and the top fixed mounting of mounting panel has the diaphragm, and the diaphragm screw thread cup joints in the outside of lead screw, and two connecting springs of bottom fixedly connected with of fixed plate, the same annular plate of two connecting springs's bottom fixed connection, and the equal fixed mounting in bottom both sides of annular plate has the locating lever, a plurality of constant head tanks have been seted up at the top of knob, and two locating levers move about the joint respectively in the constant head tank that corresponds, and one side fixed mounting of annular plate has the push rod.

Preferably, the bottom of fixed plate is fixedly mounted with two montants, the annular plate slides and cup joints the outside at two montants.

Preferably, an L-shaped plate is fixedly mounted at the top of the fixing plate, and the transverse plate is slidably sleeved on the outer side of the L-shaped plate.

Preferably, the outer side of the rotary drum is fixedly sleeved with a driven gear, an output shaft of the motor is fixedly connected with a driving gear, and the driving gear is meshed with the driven gear.

Preferably, the top of the fixed plate is provided with a sliding hole, and the mounting plate is connected in the sliding hole in a sliding manner.

Preferably, the outer side of the rotating drum is rotatably connected with a plurality of supporting wheels, and the supporting wheels are in rolling connection with the top of the chassis.

In the utility model, the CVD method growth multilayer heterojunction's preparation facilities, drive annular plate and two locating levers upward movement through promoting the push rod, make the locating lever break away from the constant head tank, remove the fixed to the knob, then rotatory knob drives the lead screw rotation, the lead screw drives the diaphragm through the screw drive with the diaphragm and under the direction of L board and carries out vertical movement, the diaphragm drives the hot plate through the mounting panel and carries out lift adjustment, thereby adjust the interval of hot plate and driving ring, then loosen the push rod, make the annular plate reset downward movement under the spring action of coupling spring, and drive the locating lever card and go into in the constant head tank, fix the knob, in order to promote the stability to the hot plate height fixation;

The utility model discloses in, CVD method growth multilayer heterojunction's preparation facilities, through arranging CVD growth cavity in the transfer ring, load the basement copper foil into CVD growth cavity, and the starter motor drives the driving gear and rotates, the driving gear drives the rotary drum rotation through the meshing with driven gear, the rotary drum drives the transfer ring through the bracing piece and rotates, carry CVD growth cavity, make its motion to the hot plate below, make CVD growth cavity heat up to the growth temperature, then let in the required precursor of growth hexagonal boron nitride to CVD growth cavity, deposit whole copper foil surface growth hexagonal boron nitride film, stop to let in the required precursor of growth hexagonal boron nitride to CVD growth cavity, utilize to drive the transfer ring rotation and slowly immigrate new copper foil to the high temperature growth district, make it just to the hexagonal boron nitride film of growth, introduce new copper foil to the high temperature growth region through the transfer ring, form the hexagonal boron nitride film on graphite alkene surface, repeat the above-mentioned step, obtain multilayer hexagonal boron nitride/graphite alkene/hexagonal boron nitride heterojunction;

the utility model has the advantages of reasonable design, through mutually supporting between mounting panel, lead screw, knob, locating lever and the diaphragm, can realize the high regulation to CVD method growth multilayer heterojunction's preparation facilities heating device to satisfy the heating work of not equidimension, the reliability is high.

Drawings

FIG. 1 is a schematic perspective view of a device for forming a multilayer heterojunction by CVD method according to the present invention;

FIG. 2 is a schematic cross-sectional view of a device for forming a multilayer heterojunction by CVD method according to the present invention;

fig. 3 is a partially enlarged view of a portion a in fig. 2.

In the figure: 1. a chassis; 2. heating plates; 3. a transfer ring; 4. a driven gear; 5. a driving gear; 6. a fixing plate; 7. mounting a plate; 8. a transverse plate; 9. an L-shaped plate; 10. a screw rod; 11. a knob; 12. a push rod; 13. an annular plate; 14. a connecting spring; 15. positioning a rod; 16. a column; 17. a drum; 18. an electric motor.

Detailed Description

The technical solutions in the embodiments of the present invention will be described clearly and completely with reference to the drawings in the embodiments of the present invention, and it is obvious that the described embodiments are only some embodiments of the present invention, not all embodiments.

Referring to fig. 1-3, a device for preparing a multilayer heterojunction grown by a cvd method, comprising a chassis 1, a heating plate 2 and a conveying ring 3, a stand column 16 and a motor 18 are fixedly mounted at the top of the chassis 1, a rotary drum 17 is sleeved on the outer side of the stand column 16 in a rotating manner, a plurality of support rods are fixedly connected to the outer side of the rotary drum 17, the top ends of the support rods are fixedly connected to the bottom of the conveying ring 3, a fixing plate 6 is fixedly mounted at the top end of the stand column 16, a mounting hole is formed in the top of the fixing plate 6, a lead screw 10 is rotatably mounted in the mounting hole, a knob 11 is fixedly mounted at the bottom end of the lead screw 10, a mounting plate 7 is fixedly mounted at the top end of the heating plate 2, a transverse plate 8 is fixedly mounted at the top end of the mounting plate 7, the transverse plate 8 is sleeved on the outer side of the lead screw 10 in a threaded manner, two connecting springs 14 are fixedly connected to the bottom end of the fixing plate 6, a same annular plate 13 is fixedly connected to the bottom ends of the two connecting springs 14, positioning rods 15 are fixedly mounted on both sides of the annular plate 13, a plurality of positioning groove is formed in a plurality of the top end of the knob 11, the two positioning rods 15 are movably connected to the corresponding positioning grooves respectively, and a push rod 12 is fixedly mounted on one side of the annular plate 13.

In this embodiment, two vertical rods are fixedly mounted at the bottom of the fixing plate 6, and the annular plate 13 is slidably sleeved outside the two vertical rods to guide the annular plate 13.

In this embodiment, the top of the fixing plate 6 is fixedly mounted with an L-shaped plate 9, and the transverse plate 8 is slidably sleeved outside the L-shaped plate 9 to guide the transverse plate 8.

In this embodiment, a driven gear 4 is fixedly sleeved outside the rotary drum 17, a driving gear 5 is fixedly connected to an output shaft of the motor 18, and the driving gear 5 is meshed with the driven gear 4 to facilitate driving the rotary drum 17 to rotate.

In this embodiment, the top of the fixing plate 6 is provided with a sliding hole, and the mounting plate 7 is slidably connected in the sliding hole to guide the mounting plate 7.

In this embodiment, a plurality of support wheels are rotatably connected to the outer side of the rotary drum 17, and the support wheels are rotatably connected to the top of the chassis 1 to support the rotary drum 17.

In the embodiment, when in use, the push rod 12 is pushed to drive the annular plate 13 and the two positioning rods 15 to move upwards, so that the positioning rods 15 are separated from the positioning grooves, the knob 11 is released from being fixed, then the knob 11 is rotated to drive the screw rod 10 to rotate, the screw rod 10 drives the transverse plate 8 to vertically move through the thread transmission with the transverse plate 8 and under the guidance of the L plate 9, the transverse plate 8 drives the heating plate 2 to carry out lifting adjustment through the mounting plate 7, thereby adjusting the distance between the heating plate 2 and the transmission ring, then the push rod 12 is released, so that the annular plate 13 is reset to move downwards under the action of the elastic force of the connecting spring 14, and the positioning rod 15 is driven to be clamped into the positioning groove, the knobs 11 are fixed to improve the stability of the high fixing of the heating plate 2, by placing the CVD growth chamber on the transfer ring 3, loading the base copper foil into the CVD growth chamber, and starting the motor 18 to drive the driving gear 5 to rotate, the driving gear 5 drives the rotary drum 17 to rotate through the meshing with the driven gear 4, the rotary drum 17 drives the conveying ring 3 to rotate through the supporting rod, the CVD growth chamber is conveyed to move to the lower part of the heating plate 2, so that the CVD growth chamber is heated to the growth temperature, then introducing a precursor required by the growth of hexagonal boron nitride into the CVD growth chamber, depositing the precursor on the surface of the whole copper foil to grow a hexagonal boron nitride film, stopping introducing the precursor required by the growth of hexagonal boron nitride into the CVD growth chamber, slowly moving the new copper foil into a high-temperature growth area by driving the conveying ring 3 to rotate so as to ensure that the new copper foil is opposite to the grown hexagonal boron nitride film, introducing the new copper foil into the high-temperature growth area through the conveying ring 3, and forming a hexagonal boron nitride film on the surface of the graphene, and repeating the steps to obtain the multilayer hexagonal boron nitride/graphene/hexagonal boron nitride heterojunction.

Claims

A preparation device for growing a multilayer heterojunction by a CVD method is characterized by comprising a base plate (1), a heating plate (2) and a conveying ring (3), the top of the chassis (1) is fixedly provided with an upright post (16) and a motor (18), the outer side of the upright post (16) is rotatably sleeved with a rotary drum (17), the outer side of the rotary drum (17) is fixedly connected with a plurality of support rods, the top ends of the plurality of support rods are fixedly connected with the bottom of the conveying ring (3), a fixing plate (6) is fixedly arranged at the top end of the upright post (16), a mounting hole is formed in the top of the fixing plate (6), a screw rod (10) is rotatably arranged in the mounting hole, a knob (11) is fixedly arranged at the bottom end of the screw rod (10), the top of the heating plate (2) is fixedly provided with an installation plate (7), the top of the installation plate (7) is fixedly provided with a transverse plate (8), the transverse plate (8) is sleeved outside the screw rod (10) in a threaded manner, two connecting springs (14) are fixedly connected with the bottom of the fixed plate (6), the bottom ends of the two connecting springs (14) are fixedly connected with the same annular plate (13), positioning rods (15) are fixedly arranged on two sides of the bottom of the annular plate (13), the top of the knob (11) is provided with a plurality of positioning grooves, two positioning rods (15) are respectively and movably clamped in the corresponding positioning grooves, and one side of the annular plate (13) is fixedly provided with a push rod (12).
2. The apparatus for preparing a CVD-grown multilayer heterojunction according to claim 1, wherein the bottom of the fixed plate (6) is fixedly provided with two vertical rods, and the annular plate (13) is slidably sleeved on the outer sides of the two vertical rods.
3. The apparatus for preparing a CVD-grown multilayer heterojunction according to claim 1, wherein the top of the fixing plate (6) is fixedly provided with an L-shaped plate (9), and the transverse plate (8) is slidably sleeved outside the L-shaped plate (9).
4. A CVD process multilayer heterojunction manufacturing apparatus as claimed in claim 1, wherein the outside of the rotary drum (17) is fixedly sleeved with a driven gear (4), the output shaft of the motor (18) is fixedly connected with a driving gear (5), and the driving gear (5) is meshed with the driven gear (4).
5. The apparatus for preparing a multilayer heterojunction as claimed in claim 1, wherein the top of the fixing plate (6) is provided with a slide hole, and the mounting plate (7) is slidably connected in the slide hole.
6. The apparatus for preparing a multilayer heterojunction as claimed in claim 1, wherein a plurality of support wheels are rotatably connected to the outer side of the drum (17), and the support wheels are rotatably connected to the top of the chassis (1).