CN217822762U - MOS tube with heat dissipation function - Google Patents
MOS tube with heat dissipation function Download PDFInfo
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- CN217822762U CN217822762U CN202221805815.3U CN202221805815U CN217822762U CN 217822762 U CN217822762 U CN 217822762U CN 202221805815 U CN202221805815 U CN 202221805815U CN 217822762 U CN217822762 U CN 217822762U
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- heat dissipation
- housing
- plastic envelope
- pin
- envelope shell
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Abstract
The utility model discloses a from radiating MOS pipe in area, including the plastic envelope shell, the encapsulation has the MOS chip in the plastic envelope shell, fill the heat conduction glue in the gap between MOS chip and the plastic envelope shell inner wall, connect the grid pin on the MOS chip, source electrode pin and drain electrode pin, the grid pin, source electrode pin and drain electrode pin stretch out the plastic envelope shell, the upper surface and the lower surface of plastic envelope shell all are equipped with a plurality of radiating grooves towards the inboard sunken a plurality of radiating grooves that are equipped with, the tank bottom of radiating groove is equipped with the bar through-hole with the inside intercommunication of plastic envelope shell, the mating installation has the heat dissipation aluminum sheet in the bar through-hole, the outer end of heat dissipation aluminum sheet is located the radiating groove, the inner of heat dissipation aluminum sheet inserts in the heat conduction glue, the gap intussuseption between heat dissipation aluminum sheet and the bar through-hole is filled with sealed glue, all be provided with a plurality of heat dissipation aluminum sheets that insert the plastic envelope shell inside through upper surface and lower surface at the plastic envelope shell and dispel the heat, can evenly dispel the heat, MOS pipe's the heat, the radiating efficiency of MOS pipe is improved, the life of MOS pipe is prolonged.
Description
Technical Field
The utility model relates to a power semiconductor device technical field, concretely relates to from radiating MOS pipe in area.
Background
MOS, is an abbreviation for MOSFET. The Metal-Oxide Semiconductor Field Effect Transistor (MOSFET), which is referred to as a Metal-Oxide-Semiconductor Field Effect Transistor (Metal-Oxide-Semiconductor Field Effect Transistor), generally generates a large amount of heat during operation of an MOS Transistor, and needs to dissipate the heat in time, the MOS Transistor is located in a high-temperature environment for a long time, so that the service life of the MOS Transistor is shortened, in the prior art, a heat dissipation aluminum sheet is generally connected to one end of the MOS Transistor for heat dissipation, but the heat dissipation aluminum sheet is only connected to a part of the MOS Transistor, so that the heat dissipation is uneven, and the heat dissipation efficiency is low.
Disclosure of Invention
In order to solve the shortcomings in the prior art, the utility model provides a from radiating MOS pipe in area.
In order to realize the technical effect, the utility model discloses a following scheme:
the utility model provides a from radiating MOS pipe in area, includes the plastic envelope shell, the encapsulation has the MOS chip in the plastic envelope shell, fill heat-conducting glue in the gap between MOS chip and the plastic envelope shell inner wall, connect grid pin, source pin and drain electrode pin on the MOS chip, grid pin, source pin and drain electrode pin stretch out the plastic envelope shell, the upper surface and the lower surface of plastic envelope shell all are equipped with a plurality of radiating grooves towards the inboard sunken a plurality of radiating grooves that are equipped with, the length of radiating groove sets up along the length of plastic envelope shell, the tank bottom of radiating groove is equipped with the bar through-hole with the inside intercommunication of plastic envelope shell, the matching installs the heat dissipation aluminum sheet in the bar through-hole, the outer end of heat dissipation aluminum sheet is located the radiating groove, the inner of heat dissipation aluminum sheet inserts in the heat-conducting glue and is close to the MOS chip setting, the gap intussuseption between heat dissipation aluminum sheet and the bar through-hole is filled with the inside intercommunication of plastic envelope shell has the encapsulating hole on the plastic envelope shell.
According to the preferable technical scheme, the part, located in the heat dissipation groove, of the heat dissipation aluminum sheet is provided with a plurality of hollow holes penetrating through the heat dissipation aluminum sheet.
According to the preferable technical scheme, the surfaces of the part, located in the heat dissipation groove, of the heat dissipation aluminum sheet and the surface of the part, inserted into the heat conduction glue, of the heat dissipation aluminum sheet are corrugated.
The plastic package shell comprises a first shell and a second shell which are symmetrically arranged, the first shell and the second shell are matched to package the MOS chip, the first shell and the second shell are detachably connected, the glue filling hole is formed in the first shell or the second shell, and the first shell and the second shell are connected through hot melting.
According to the preferable technical scheme, protective tubes are sleeved on the grid electrode pin, the source electrode pin and the drain electrode pin, the lengths of the protective tubes are smaller than those of the grid electrode pin, the source electrode pin and the drain electrode pin, and one ends of the protective tubes are fixedly connected with the plastic package shell.
Compared with the prior art, beneficial effect does:
the utility model discloses simple structure, convenient to use all is provided with a plurality of inside heat dissipation aluminum sheets that insert the plastic envelope shell through upper surface and the lower surface at the plastic envelope shell and dispels the heat, can evenly dispel the heat, has improved the radiating efficiency of MOS pipe, has prolonged the life of MOS pipe.
Drawings
FIG. 1 is a schematic structural view of the present invention;
fig. 2 is a schematic cross-sectional view of the present invention.
Reference numerals: 1. plastic packaging the shell; 101. a first housing; 102. a second housing; 2. a heat sink; 3. radiating aluminum sheets; 4. hollowing out holes; 5. a gate pin; 6. a drain lead; 7. a source lead; 8. protecting the tube; 9. an MOS chip; 10. and (4) heat-conducting glue.
Detailed Description
The technical solutions in the embodiments of the present invention will be described clearly and completely with reference to the accompanying drawings in the embodiments of the present invention, and it is obvious that the described embodiments are only some embodiments of the present invention, not all embodiments.
The utility model provides a from radiating MOS pipe, includes plastic package shell 1, the encapsulation has MOS chip 9 in the plastic package shell 1, fill heat-conducting glue 10 in the gap between MOS chip 9 and the plastic package shell 1 inner wall, connect grid pin 5, source pin 7 and drain electrode pin 6 on the MOS chip 9, grid pin 5, source pin 7 and drain electrode pin 6 stretch out plastic package shell 1, the upper surface and the lower surface of plastic package shell 1 all are equipped with a plurality of radiating grooves 2 towards the inboard sunken, the length of radiating groove 2 sets up along the length of plastic package shell 1, the tank bottom of radiating groove 2 is equipped with the bar through-hole with the inside intercommunication of plastic package shell 1, the matching is installed heat dissipation aluminum sheet 3 in the bar through-hole, the outer end of heat dissipation aluminum sheet 3 is located radiating groove 2, the inner of heat dissipation aluminum sheet 3 inserts in heat-conducting glue 10 and is close to the setting of MOS chip 9, the gap intussuseption between heat dissipation aluminum sheet 3 and the bar through-hole is filled with sealed glue, have the heat-conducting glue hole that communicates with the plastic package shell 1 inside on the plastic package shell 1, inject glue 10 in the plastic package shell 1 through the plastic package shell.
According to the preferable technical scheme, the part, located in the heat dissipation groove 2, of the heat dissipation aluminum sheet 3 is provided with the plurality of hollow holes 4 penetrating through the heat dissipation aluminum sheet 3, so that the surface area of the heat dissipation aluminum sheet 3 is increased, and the heat dissipation efficiency is improved.
According to the preferable technical scheme, the surfaces of the part, located in the heat dissipation groove 2, of the heat dissipation aluminum sheet 3 and the part, inserted into the heat conduction glue 10, of the heat dissipation aluminum sheet are corrugated, so that the surface area of the heat dissipation aluminum sheet 3 is further increased, the contact area between the heat dissipation aluminum sheet 3 and the heat conduction glue 10 is increased, and the heat dissipation efficiency is further improved.
Preferably, the plastic package housing 1 includes a first housing 101 and a second housing 102 which are symmetrically arranged, the first housing 101 and the second housing 102 are matched to package the MOS chip 9, the first housing 101 and the second housing 102 are detachably connected, the glue filling hole is located on the first housing 101 or the second housing 102, and the first housing 101 and the second housing 102 are connected through hot melting.
According to the preferable technical scheme, the grid electrode pin 5, the source electrode pin 7 and the drain electrode pin 6 are all sleeved with the protection pipes 8, the lengths of the protection pipes 8 are smaller than those of the grid electrode pin 5, the source electrode pin 7 and the drain electrode pin 6, and one ends of the protection pipes 8 are fixedly connected with the plastic package shell 1.
In the description of the present invention, it is to be understood that the terms "upper", "lower", "top", "bottom", "inner", "outer", and the like refer to the orientation or position relationship shown in the drawings, or the orientation or position relationship that the product of the present invention is usually placed when in use, or the orientation or position relationship that one skilled in the art conventionally understands, and are only for convenience of describing the present invention and simplifying the description, but do not refer to or imply that the device or element referred to must have a specific orientation, be constructed and operated in a specific orientation, and therefore should not be construed as limiting the present invention.
Furthermore, the terms "first", "second" and "first" are used for descriptive purposes only and are not to be construed as indicating or implying relative importance or implicitly indicating the number of technical features indicated. Thus, a feature defined as "first" or "second" may explicitly or implicitly include one or more of that feature. In the description of the present invention, "a plurality" means two or more unless specifically limited otherwise.
Based on the embodiments in the present invention, all other embodiments obtained by a person skilled in the art without creative efforts belong to the protection scope of the present invention.
Claims (5)
1. The utility model provides a from radiating MOS pipe in area, its characterized in that, includes the plastic envelope shell, the encapsulation has the MOS chip in the plastic envelope shell, fill heat-conducting glue in the gap between MOS chip and the plastic envelope shell inner wall, connect grid pin, source electrode pin and drain electrode pin on the MOS chip, grid pin, source electrode pin and drain electrode pin stretch out the plastic envelope shell, the upper surface and the lower surface of plastic envelope shell all are equipped with a plurality of radiating grooves towards inboard sunken, the length of radiating groove sets up along the length of plastic envelope shell, the tank bottom of radiating groove is equipped with the bar through-hole with the inside intercommunication of plastic envelope shell, the matching installs the heat dissipation aluminum sheet in the bar through-hole, the outer end of heat dissipation aluminum sheet is located the radiating groove, insert in the heat-conducting glue and be close to the MOS chip setting in the inner of heat dissipation aluminum sheet, the gap intussuseption between heat dissipation aluminum sheet and the bar through-hole is filled with sealed glue, have the encapsulating hole with the inside intercommunication of plastic envelope shell on the plastic envelope shell.
2. The MOS tube with self-contained heat dissipation of claim 1, wherein the portion of the heat dissipation aluminum sheet located in the heat dissipation groove has a plurality of hollow holes disposed through the heat dissipation aluminum sheet.
3. The MOS transistor with self-contained heat dissipation of claim 1, wherein the surface of the portion of the heat-dissipating aluminum sheet located in the heat-dissipating groove and the portion inserted into the thermally conductive paste are corrugated.
4. The MOS tube with the self-heat dissipation as recited in claim 1, wherein the plastic package housing comprises a first housing and a second housing, the first housing and the second housing are symmetrically arranged, the MOS chip is packaged by matching the first housing and the second housing, the first housing and the second housing are detachably connected, the glue filling hole is located on the first housing or the second housing, and the first housing and the second housing are connected through hot melting.
5. The MOS tube with self-cooling as claimed in claim 1, wherein a protection tube is sleeved on each of the gate pin, the source pin and the drain pin, the length of the protection tube is less than the length of the gate pin, the source pin and the drain pin, and one end of the protection tube is fixedly connected to the plastic package housing.
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
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CN202221805815.3U CN217822762U (en) | 2022-07-12 | 2022-07-12 | MOS tube with heat dissipation function |
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CN202221805815.3U CN217822762U (en) | 2022-07-12 | 2022-07-12 | MOS tube with heat dissipation function |
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CN217822762U true CN217822762U (en) | 2022-11-15 |
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Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN116705724A (en) * | 2023-06-27 | 2023-09-05 | 先之科半导体科技(东莞)有限公司 | MOS transistor convenient to maintain and long in service life |
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2022
- 2022-07-12 CN CN202221805815.3U patent/CN217822762U/en active Active
Cited By (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN116705724A (en) * | 2023-06-27 | 2023-09-05 | 先之科半导体科技(东莞)有限公司 | MOS transistor convenient to maintain and long in service life |
CN116705724B (en) * | 2023-06-27 | 2024-03-22 | 先之科半导体科技(东莞)有限公司 | MOS transistor convenient to maintain and long in service life |
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