CN116705724A - MOS transistor convenient to maintain and long in service life - Google Patents
MOS transistor convenient to maintain and long in service life Download PDFInfo
- Publication number
- CN116705724A CN116705724A CN202310766441.1A CN202310766441A CN116705724A CN 116705724 A CN116705724 A CN 116705724A CN 202310766441 A CN202310766441 A CN 202310766441A CN 116705724 A CN116705724 A CN 116705724A
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- Prior art keywords
- mos transistor
- heat
- maintain
- metal layer
- easy
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- 239000010410 layer Substances 0.000 claims description 58
- 229910052751 metal Inorganic materials 0.000 claims description 31
- 239000002184 metal Substances 0.000 claims description 31
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims description 12
- 229910052710 silicon Inorganic materials 0.000 claims description 12
- 239000010703 silicon Substances 0.000 claims description 12
- 238000002347 injection Methods 0.000 claims description 9
- 239000007924 injection Substances 0.000 claims description 9
- 229910052782 aluminium Inorganic materials 0.000 claims description 8
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 claims description 8
- 239000011229 interlayer Substances 0.000 claims description 4
- 230000017525 heat dissipation Effects 0.000 abstract description 18
- 230000032683 aging Effects 0.000 abstract description 2
- 150000002500 ions Chemical class 0.000 description 3
- 229910021420 polycrystalline silicon Inorganic materials 0.000 description 3
- 229920005591 polysilicon Polymers 0.000 description 3
- 239000007943 implant Substances 0.000 description 2
- 239000000463 material Substances 0.000 description 2
- 239000000243 solution Substances 0.000 description 2
- 239000004411 aluminium Substances 0.000 description 1
- 230000009286 beneficial effect Effects 0.000 description 1
- 230000000295 complement effect Effects 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 238000002513 implantation Methods 0.000 description 1
- 239000012535 impurity Substances 0.000 description 1
- 238000012423 maintenance Methods 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 239000004065 semiconductor Substances 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/34—Arrangements for cooling, heating, ventilating or temperature compensation ; Temperature sensing arrangements
- H01L23/36—Selection of materials, or shaping, to facilitate cooling or heating, e.g. heatsinks
- H01L23/367—Cooling facilitated by shape of device
- H01L23/3675—Cooling facilitated by shape of device characterised by the shape of the housing
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/34—Arrangements for cooling, heating, ventilating or temperature compensation ; Temperature sensing arrangements
- H01L23/36—Selection of materials, or shaping, to facilitate cooling or heating, e.g. heatsinks
- H01L23/367—Cooling facilitated by shape of device
- H01L23/3672—Foil-like cooling fins or heat sinks
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/76—Unipolar devices, e.g. field effect transistors
- H01L29/772—Field effect transistors
- H01L29/78—Field effect transistors with field effect produced by an insulated gate
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02D—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN INFORMATION AND COMMUNICATION TECHNOLOGIES [ICT], I.E. INFORMATION AND COMMUNICATION TECHNOLOGIES AIMING AT THE REDUCTION OF THEIR OWN ENERGY USE
- Y02D10/00—Energy efficient computing, e.g. low power processors, power management or thermal management
Abstract
The application discloses a MOS transistor which is convenient to maintain and long in service life, and the MOS transistor comprises a shell, wherein a plurality of groups of mounting holes are formed in the side face and the bottom end of the shell, a contact device is arranged on the inner side of the shell, heat dissipation components are respectively arranged on the four sides and the bottom between the contact device and the shell, a heat conduction rod is arranged on one side of the heat dissipation component, a heat dissipation fin is arranged at one end of the heat conduction rod, and the heat conduction rod is arranged in the mounting holes. According to the application, the heat radiating component is arranged on the surface of the contact device, the heat conducting rod is arranged on one side of the heat radiating component, and the heat radiating fin is arranged at one end of the heat conducting rod, so that the heat radiating component can convey heat on the surface of the contact device to the heat radiating fin through the heat conducting rod, and the heat is led out through the heat radiating fin, thereby accelerating the heat radiating efficiency of the MOS transistor, avoiding the aging of the MOS transistor caused by overhigh temperature of the MOS transistor, and further prolonging the service life of the MOS transistor.
Description
Technical Field
The application relates to the technical field of MOS transistors, in particular to a MOS transistor which is convenient to maintain and long in service life.
Background
The MOS transistor is one of metal-oxide-semiconductor, the transistor with the structure is called MOS transistor for short, and is mainly divided into P-type MOS transistor and N-type MOS transistor, the integrated circuit formed by the MOS transistor is called MOS integrated circuit, and the complementary MOS integrated circuit formed by the PMOS transistor and the NMOS transistor is CMOS-IC. For example, CN 109103257A, a high-reliability deep trench power MOS device comprises a heavily doped N-type doped drain region on the back of a silicon wafer, and a lightly doped N-type doped impurity epitaxial layer above the drain region; the grid electrode conductive polysilicon and the shielding grid conductive polysilicon are separated by an insulating medium layer between the conductive polysilicon; the bottom of the groove is coated with a first P-type heavily doped region in the epitaxial layer, and the side wall of the groove is provided with a P-type middle doped region; the application relates to a MOS transistor, which is characterized in that an insulating medium layer is arranged on the upper surface of an epitaxial layer, a contact hole penetrates through the insulating medium layer and extends into a well layer, a metal layer is filled in the contact hole, a second P-type heavily doped region is arranged at the bottom of the contact hole and is positioned in the well layer.
Disclosure of Invention
The application aims to provide a MOS transistor which is convenient to maintain and long in service life, so that the problem that when the conventional MOS transistor works, the MOS transistor body is extremely easy to heat due to continuous microwave current of an internal metal electrode, the conventional MOS transistor generally only dissipates heat through the body, the heat dissipation efficiency is low, the MOS transistor is extremely easy to damage due to overhigh temperature, and the service life of the MOS transistor is further reduced is solved.
In order to achieve the above purpose, the present application provides the following technical solutions: the utility model provides a MOS transistor convenient to maintain and long service life, includes the shell, the inside of shell side and bottom is provided with multiunit mounting hole, the inboard of shell is provided with contact device, four sides and bottom between contact device and the shell are provided with radiator unit respectively, one side of radiator unit is provided with the heat conduction pole, the one end of heat conduction pole is provided with the fin, just the heat conduction pole is installed inside the mounting hole to radiator unit will contact device surface's heat leads to the heat conduction pole and carries the fin.
As a technical scheme of the application, the bottom end of the contact device is provided with the first drain metal layer, and the first drain metal layer is made of aluminum so as to accelerate heat dissipation of the MOS transistor.
As a technical scheme of the application, a silicon wafer is arranged on the upper end face of the first drain electrode metal layer, and an epitaxial region is arranged on the upper end face of the silicon wafer so as to facilitate the operation of the silicon wafer.
As a technical scheme of the application, the top end of the epitaxial region is provided with an insulating layer, and the upper end surface of the insulating layer is provided with a primary region so that the insulating layer can separate the epitaxial region from the primary region.
As a technical scheme of the application, the top end of the contact device is symmetrically provided with the switch holes, and the switch holes extend into the original region, the insulating layer and the epitaxial region so that the switch holes are arranged in the epitaxial region, the insulating layer and the original region.
As one technical scheme of the application, the inside of the switch hole is provided with a well hole groove, and the inside of the well hole groove is provided with a switch electrode so that the switch electrode is arranged in the well hole groove.
As a technical scheme of the application, an access hole is formed in the switch electrode, and a shielding end is arranged at the bottom end of the switch electrode so as to facilitate the shielding end to block redundant electromagnetic waves.
As a technical scheme of the application, the top end of the inner part of the shell is provided with the second drain electrode metal layer, and the second drain electrode metal layer is made of an aluminum plate so as to facilitate the MOS transistor to dissipate heat through the second drain electrode metal layer in an accelerating way.
As a technical scheme of the application, a bump is arranged at the center of the lower end face of the second drain electrode metal layer, the bump extends into the original region and the inside of the center of the insulating layer, and an interlayer film is arranged on the lower end face of the second drain electrode metal layer, so that the bump is arranged in the original region and the inside of the insulating layer. As a technical scheme of the application, the bottom end of the switch hole is provided with an injection region, and the injection region adopts a cylindrical structure so as to collect the ions.
Compared with the prior art, the application has the beneficial effects that: through set up the radiator unit at contact device's surface to set up the heat conduction pole in radiator unit's one side, set up the fin in the one end of heat conduction pole, make radiator unit lead to the heat conduction pole with contact device surface's heat and carry the fin, and derive heat through the fin, accelerate MOS transistor's radiating efficiency, avoid MOS transistor to lead to MOS transistor ageing because of the high temperature, and then increase MOS transistor's life.
Drawings
FIG. 1 is a schematic cross-sectional elevation view of the present application;
FIG. 2 is a schematic side sectional view of the present application;
FIG. 3 is a schematic diagram of the external structure of the heat dissipating assembly according to the present application;
FIG. 4 is an enlarged schematic view of the structure of FIG. 1A according to the present application;
fig. 5 is an enlarged schematic view of the structure of fig. 2B according to the present application.
In the figure: 1. a housing; 101. a mounting hole; 2. a contact device; 201. a switch hole; 3. a heat dissipation assembly; 4. a heat conduction rod; 5. a heat sink; 6. a first drain metal; 7. a silicon wafer; 8. an epitaxial region; 9. an insulating layer; 10. a primary region; 11. a second drain metal; 12. a bump; 13. an interlayer film; 14. a switching electrode; 1401. an access hole; 15. a shielding end; 16. an implantation region; 17. a wellbore cell.
Detailed Description
The technical solutions in the embodiments of the present application will be clearly and completely described below with reference to the accompanying drawings in the embodiments of the present application. All other embodiments, which can be made by those skilled in the art based on the embodiments of the application without making any inventive effort, are intended to be within the scope of the application.
Referring to fig. 1-5, an embodiment of the present application is provided: the MOS transistor with convenient maintenance and long service life comprises a shell 1, wherein a plurality of groups of mounting holes 101 are formed in the side face and the bottom end of the shell 1, a contact device 2 is arranged on the inner side of the shell 1, a heat dissipation component 3 is respectively arranged on four sides and the bottom between the contact device 2 and the shell 1, a heat conduction rod 4 is arranged on one side of the heat dissipation component 3, a heat dissipation fin 5 is arranged at one end of the heat conduction rod 4, and the heat conduction rod 4 is arranged in the mounting holes 101;
when the heat dissipation device is used, the heat dissipation component 3 is arranged on the surface of the contact device 2, the heat conduction rod 4 is arranged on one side of the heat dissipation component 3, and the heat dissipation fin 5 is arranged at one end of the heat conduction rod 4, so that the heat dissipation component 3 conveys heat on the surface of the contact device 2 to the heat dissipation fin 5 through the heat conduction rod 4, and the heat is led out through the heat dissipation fin 5;
the bottom end of the inside of the contact device 2 is provided with a first drain electrode metal layer 6, and the first drain electrode metal layer 6 is made of aluminum;
in use, the heat dissipation of the MOS transistor is accelerated by mounting the first drain metal layer 6 of aluminium material at the bottom end of the interior of the contact device 2;
the upper end face of the first drain electrode metal layer 6 is provided with a silicon wafer 7, and the upper end face of the silicon wafer 7 is provided with an epitaxial region 8;
when in use, the silicon wafer 7 is arranged on the upper end surface of the first drain electrode metal layer 6, so that the silicon wafer 7 carries out operation;
an insulating layer 9 is arranged at the top end of the epitaxial region 8, and an original region 10 is arranged on the upper end surface of the insulating layer 9;
in use, the epitaxial region 8 and the original region 10 are separated by the insulating layer 9 by providing the insulating layer 9 between the epitaxial region 8 and the original region 10;
the top end of the contact device 2 is symmetrically provided with a switch hole 201, and the switch hole 201 extends into the original region 10, the insulating layer 9 and the epitaxial region 8;
in use, the switch hole 201 is arranged inside the top end of the contact device 2, so that the switch hole 201 is arranged inside the epitaxial region 8, the insulating layer 9 and the original region 10;
the inside of the switch hole 201 is provided with a well hole groove 17, and the inside of the well hole groove 17 is provided with a switch electrode 14;
in use, the switching electrode 14 is mounted inside the well 17 by providing the well 17 inside the switching hole 201;
an access hole 1401 is arranged in the switch electrode 14, and a shielding end 15 is arranged at the bottom end of the switch electrode 14;
in use, the shielding end 15 is made to block redundant electromagnetic waves by arranging the access hole 1401 inside the switch electrode 14 and arranging the shielding end 15 at the bottom end of the switch electrode 14;
the top end of the inside of the shell 1 is provided with a second drain electrode metal layer 11, and the second drain electrode metal layer 11 is made of an aluminum plate;
in use, the MOS transistor is enabled to accelerate heat dissipation through the second drain metal layer 11 by installing the second drain metal layer 11 made of aluminum material inside the top end of the shell 1;
the lower end face of the second drain metal layer 11 is provided with a bump 12, and the bump 12 extends into the inside of the center of the original region 10 and the insulating layer 9, and the lower end face of the second drain metal layer 11 is provided with an interlayer film 13;
in use, the bump 12 is mounted inside the original region 10 and the insulating layer 9 by disposing the bump 12 on the lower end surface of the second drain metal layer 11;
an injection region 16 is arranged at the bottom end of the switch hole 201, and the injection region 16 adopts a cylindrical structure;
in use, by locating the cylindrical implant region 16 at the bottom end of the switch aperture 201, ions are collected by the implant region 16.
When the embodiment of the application is used, the following steps are adopted: firstly, through setting up radiator unit 3 in the side of contact device 2 for radiator unit 3 will heat to fin 5 through heat conduction pole 4, then will heat by fin 5 discharge, and then make MOS transistor radiating efficiency better, and through setting up insulating layer 9 between epitaxial region 8 and former district 10, make insulating layer 9 separate epitaxial region 8 and former district 10, avoid epitaxial region 8 and former district 10 to appear electric connection phenomenon, through setting up injection zone 16 in the bottom of switch hole 201, make the ion inject into injection zone 16, and carry inside silicon chip 7 through epitaxial region 8 by injection zone 16, thereby accomplish the use work of a MOS transistor convenient to maintain and long service life.
The embodiments of the present application have been shown and described for the purpose of illustration and description, it being understood that the above embodiments are illustrative and not to be construed as limiting the application, and that variations, modifications, alternatives and variations may be made therein by one of ordinary skill in the art without departing from the scope of the application.
Claims (10)
1. The utility model provides a MOS transistor convenient to maintain and long service life, includes shell (1), its characterized in that: the novel heat-conducting structure is characterized in that a plurality of groups of mounting holes (101) are formed in the side face and the bottom end of the shell (1), a contact device (2) is arranged on the inner side of the shell (1), heat-radiating components (3) are arranged on the four sides and the bottom between the contact device (2) and the shell (1) respectively, a heat-conducting rod (4) is arranged on one side of each heat-radiating component (3), a heat-radiating fin (5) is arranged at one end of each heat-conducting rod (4), and each heat-conducting rod (4) is arranged inside the corresponding mounting hole (101).
2. A MOS transistor of claim 1, wherein the MOS transistor is easy to maintain and has a long lifetime, the MOS transistor comprising: the bottom inside the contact device (2) is provided with a first drain electrode metal layer (6), and the first drain electrode metal layer (6) is made of aluminum.
3. A MOS transistor of claim 2, wherein the MOS transistor is easy to maintain and has a long lifetime, characterized in that: the upper end face of the first drain electrode metal layer (6) is provided with a silicon wafer (7), and the upper end face of the silicon wafer (7) is provided with an epitaxial region (8).
4. A MOS transistor of claim 3 which is easy to maintain and has a long lifetime, characterized in that: an insulating layer (9) is arranged at the top end of the epitaxial region (8), and an original region (10) is arranged on the upper end face of the insulating layer (9).
5. A MOS transistor of claim 1, wherein the MOS transistor is easy to maintain and has a long lifetime, the MOS transistor comprising: the top end of the contact device (2) is symmetrically provided with a switch hole (201), and the switch hole (201) extends into the original region (10), the insulating layer (9) and the epitaxial region (8).
6. A MOS transistor of claim 5, wherein the MOS transistor is easy to maintain and has a long lifetime, the MOS transistor being characterized by: a well hole groove (17) is formed in the switch hole (201), and a switch electrode (14) is arranged in the well hole groove (17).
7. A MOS transistor of claim 1, wherein the MOS transistor is easy to maintain and has a long lifetime, the MOS transistor comprising: an access hole (1401) is formed in the switch electrode (14), and a shielding end (15) is arranged at the bottom end of the switch electrode (14).
8. A MOS transistor of claim 1, wherein the MOS transistor is easy to maintain and has a long lifetime, the MOS transistor comprising: the top inside shell (1) is provided with second drain electrode metal layer (11), second drain electrode metal layer (11) adopts aluminum plate to make.
9. A MOS transistor of claim 8, wherein the MOS transistor is easy to maintain and has a long lifetime, the MOS transistor being characterized by: the lower end face of the second drain electrode metal layer (11) is provided with a bump (12), the bump (12) extends into the inside of the centers of the original region (10) and the insulating layer (9), and the lower end face of the second drain electrode metal layer (11) is provided with an interlayer film (13).
10. A MOS transistor of claim 5, wherein the MOS transistor is easy to maintain and has a long lifetime, the MOS transistor being characterized by: an injection region (16) is arranged at the bottom end of the switch hole (201), and the injection region (16) adopts a cylindrical structure.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202310766441.1A CN116705724B (en) | 2023-06-27 | 2023-06-27 | MOS transistor convenient to maintain and long in service life |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202310766441.1A CN116705724B (en) | 2023-06-27 | 2023-06-27 | MOS transistor convenient to maintain and long in service life |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| CN116705724A true CN116705724A (en) | 2023-09-05 |
| CN116705724B CN116705724B (en) | 2024-03-22 |
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Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN202310766441.1A Active CN116705724B (en) | 2023-06-27 | 2023-06-27 | MOS transistor convenient to maintain and long in service life |
Country Status (1)
| Country | Link |
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| CN (1) | CN116705724B (en) |
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| Publication number | Priority date | Publication date | Assignee | Title |
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| CN113035956A (en) * | 2021-02-26 | 2021-06-25 | 中之半导体科技(东莞)有限公司 | Field effect transistor with sunken groove |
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| CN216902901U (en) * | 2021-12-09 | 2022-07-05 | 武汉景润通信技术有限公司 | Power amplifier with good transistor heat dissipation effect |
| CN217822762U (en) * | 2022-07-12 | 2022-11-15 | 无锡富耘德半导体科技有限公司 | MOS tube with heat dissipation function |
| CN218482226U (en) * | 2022-09-13 | 2023-02-14 | 江苏东海半导体股份有限公司 | MOSFET device for electric vehicle controller |
| CN218568825U (en) * | 2022-08-20 | 2023-03-03 | 深圳市智楠科技有限公司 | Do benefit to radiating field effect transistor for new energy automobile |
-
2023
- 2023-06-27 CN CN202310766441.1A patent/CN116705724B/en active Active
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| US20120056277A1 (en) * | 2010-09-02 | 2012-03-08 | Wei-Chieh Lin | Semiconductor device integrated with converter and package structure thereof |
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Also Published As
| Publication number | Publication date |
|---|---|
| CN116705724B (en) | 2024-03-22 |
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