CN217720245U

CN217720245U - TO packaged semiconductor laser beam combining module

Info

Publication number: CN217720245U
Application number: CN202221575763.5U
Authority: CN
Inventors: 张辰; 刘大巍; 孙婷婷; 董洪斌; 王一
Original assignee: Dongguan Fangru Photoelectric Technology Co ltd
Current assignee: Dongguan Fangru Photoelectric Technology Co ltd
Priority date: 2022-06-23
Filing date: 2022-06-23
Publication date: 2022-11-01
Anticipated expiration: 2032-06-23

Abstract

The utility model provides a TO encapsulation semiconductor laser closes and restraints module belongs TO the semiconductor technology field, including first module, second module, polarization beam combining mirror, focusing lens, fin and fan, first module and second module are the same, do not include laser heat sink, semiconductor laser tube core, fast axle collimating mirror,A slow axis collimating mirror. The two modules have n x n semiconductor laser tube cores to emit laser, fast and slow axis collimation to obtain collimated and transmitted light beam, the two modules are perpendicular to each other in the light emitting direction and horizontal direction, so that the output laser polarization directions are perpendicular to each other, the laser transmission directions are superposed after passing through the polarization beam combining mirror, the lasers of the two sub modules are combined to one point through the focusing lens, the lasers of the 2 x n blue semiconductor laser tube cores are collimated and combined to obtain 2*n of single tube core laser power²The method can be used in the fields of laser processing, illumination and the like.

Description

TO packaged semiconductor laser beam combining module

Technical Field

The utility model belongs TO the technical field of the semiconductor, especially, relate TO a TO encapsulation semiconductor laser closes and restraints module.

Background

In recent years, with the progress of technology, blue-ray TO-packaged semiconductor lasers are developed more and more rapidly and are applied TO the fields of processing, communication, illumination and the like.

In the processing and lighting industries, the requirement for laser power is high, but the laser power emitted by a single semiconductor laser die is limited, so that in order to obtain high-power semiconductor laser, a beam combining technology is generally required to combine the laser emitted by a plurality of semiconductor laser dies into one beam.

The semiconductor laser emits laser light from a chip and then transmits the laser light in space, generally, the laser light is an elliptical light beam with a non-uniform divergence angle, the direction with a small divergence angle is called a slow axis, the divergence angle is about 10 degrees, the direction with a large divergence angle is a fast axis direction, the divergence angle can reach more than 35 degrees, and the fast axis direction is perpendicular to the slow axis direction. Because the divergence angle of the fast and slow axes of the semiconductor laser is greatly different, the fast and slow axes of the light beams emitted by the light emitting chip are generally required to be collimated by using the focusing lens before beam combination, and then the light beams are combined and focused.

The TO package is a package type of a semiconductor laser die, and is applied more and more, such as a common TO package of a blue-light semiconductor laser die commonly used in the processing and lighting fields.

At present, semiconductor laser beam combining technology is mature, but relatively few reports of beam combining technology of TO packaging tube cores commonly used for blue semiconductor lasers are reported.

Disclosure of Invention

TO prior art not enough, the utility model provides a TO encapsulation semiconductor laser closes and restraints module, close bundle mirror, focusing lens, fin, fan including two submodule pieces, polarization, two submodule pieces include laser heat sink, semiconductor laser tube core, fast axle collimating mirror, slow axle collimating mirror respectively. The two sub-modules respectively have n x n semiconductor laser tube cores to emit laser beams which are collimated by a fast axis and a slow axis to obtain collimated and transmitted beams, the two sub-modules are mutually vertical in the light emitting direction and the horizontal direction, so that the output laser polarization directions are mutually vertical, the laser transmission directions are superposed after passing through a polarization beam combiner, and the lasers of the two sub-modules are combined into one point after passing through a focusing lens.

In order to achieve the above object, the utility model provides a following technical scheme: a TO package semiconductor laser beam combining module comprises:

the device comprises a first module, a second module, a polarization beam combiner and a focusing lens, wherein the first module and the second module are completely the same, the polarization beam combiner is arranged on a polarized light path in the horizontal direction of the first module, the polarization beam combiner is arranged on a polarized light path in the vertical direction of the second module, the included angles between the beam combining surface of the polarization beam combiner and light beams emitted by the first module and the second module are both 45 degrees, and the focusing lens is arranged on a light emitting light path after the polarization beam combiner polarizes and combines beams.

Further, the first module includes: the laser heat sink, the semiconductor laser tube core, the fast axis collimating mirror, the slow axis collimating mirror and the hole; the semiconductor laser tube core, the fast axis collimating mirror, the slow axis collimating mirror and the holes are the same in quantity, the laser heat sink is in a step shape and comprises more than one step surface and a step platform, the step surface is provided with more than one hole, the semiconductor laser tube core is fixed in the holes, the fast axis collimating mirror and the slow axis collimating mirror are arranged on the step platform, and the light path of the upper semiconductor laser tube core sequentially passes through the fast axis collimating mirror and the slow axis collimating mirror.

Further, the number of holes on each step surface is the same.

Further, the number of holes on a single step surface is the same as that of steps.

Further, the semiconductor laser die is a TO package semiconductor laser die.

Furthermore, the fast axis collimating lens, the slow axis collimating lens, the polarization beam combining lens and the focusing lens are plated with blue light antireflection films.

Further, the fast axis collimating lens comprises a lens and a lens frame, wherein the lens is arranged on the lens frame.

Further, the laser heat sink also comprises two heat dissipation surfaces which are perpendicular to each other.

The TO packaged semiconductor laser beam combining module further comprises a radiator and a fan, wherein a first module, a second module and a polarization beam combining mirror are arranged on one surface of the radiator, and the fan is arranged on the opposite surface of the radiator.

Compared with the prior art, the utility model provides a TO encapsulation semiconductor laser closes and restraints module possesses following beneficial effect:

collimating and combining the 2 × n blue semiconductor laser dies to obtain 2*n laser power of single die²The method can be used in the fields of laser processing, illumination and the like.

Drawings

FIG. 1 is a schematic view of a TO-packaged semiconductor laser beam combining module

FIG. 2 is a schematic view of a top view of a TO-packaged semiconductor laser beam combining module

FIG. 3 is a detailed view of the TO-packaged semiconductor laser beam combining module tube core, the fast axis collimating mirror and the full axis collimating mirror

FIG. 4 is a schematic view of a laser heat sink of a TO-packaged semiconductor laser beam combining module

FIG. 5 is a schematic view of a TO packaged semiconductor laser beam combining module heat sink

FIG. 6 is a schematic diagram of a TO-packaged semiconductor laser beam combining module polarization beam combining mirror

FIG. 7 is a schematic diagram of an optical path of a TO-packaged semiconductor laser beam combining module

In the figure:

1-a first module; 2-a second module; 3-a polarization beam combiner; 4-a focusing lens; 5-a heat sink; 6-a fan; 101-laser heat sink; 102-semiconductor laser core tube; 103-fast axis collimating mirror; 104-slow axis collimating mirror; 103-1 lens; 103-2 frames; 105-well; 106-a heat dissipation surface; 107-step surface; 108-a step platform; 201-second laser heat sink; 202-second semiconductor laser core tube; 203-second fast axis collimating mirror; 204-a second slow axis collimating mirror; 203-1 second lens; 203-2 a second frame; 205-a second well; 206-a second heat dissipating surface; 301-a beam combining surface; 401-focusing lens; 402-focus frame.

Detailed Description

TO packaged semiconductor laser beam combining module includes:

the device comprises a first module (1), a second module (2), a polarization beam combiner (3) and a focusing lens (4), wherein the first module (1) is completely the same as the second module (2), the polarization beam combiner (3) is arranged on a polarized light path in the horizontal direction of the first module (1), the polarization beam combiner (3) is arranged on a polarized light path in the vertical direction of the second module (2), included angles between a beam combining surface (301) of the polarization beam combiner (3) and light beams emitted by the first module (1) and the second module (2) are 45 degrees, and the focusing lens (4) is arranged on a light emitting path after the polarization beam combiner (3) is combined;

the first module includes: the laser device comprises a laser heat sink (101), a semiconductor laser tube core (102), a fast axis collimating mirror (103), a slow axis collimating mirror (104) and a hole (105); the semiconductor laser tube core (102), the fast axis collimating mirror (103), the slow axis collimating mirror (104) and the holes (105) are the same in quantity, the laser heat sink (101) is in a step shape, more than one hole (105) is arranged on a step surface (107), the semiconductor laser tube core (102) is fixed in the holes (105), the fast axis collimating mirror (103) and the slow axis collimating mirror (104) are arranged on a step platform (108), and the light path of the semiconductor laser tube core (102) sequentially passes through the fast axis collimating mirror (103) and the slow axis collimating mirror (104).

The number of the holes (105) on each step surface (107) is the same, and the number of the holes (105) on the single-layer step surface (107) is the same as the number of steps.

The semiconductor laser tube core (102) is packaged in a TO mode, antireflection films are plated on the fast axis collimating mirror (103), the slow axis collimating mirror (104), the polarization beam combiner (3) and the focusing lens (4), the fast axis collimating mirror (103) comprises a lens (103-1) and a lens frame (103-2), and the lens (103-1) is installed on the lens frame (103-2).

The laser heat sink (101) further comprises two mutually perpendicular heat dissipation surfaces (106).

The module further comprises a radiating fin (5) and a fan (6), wherein the first module (1), the second module (2) and the polarization beam combiner (3) are arranged on one surface of the radiating fin (5), and the fan (6) is arranged on the opposite surface of the radiating fin.

As shown in fig. 1, 2 and 3, a blue semiconductor laser beam combining module includes a first module 1, a second module 2, a polarization beam combiner 3, a focusing lens 4, a heat sink 5 and a fan 6.

Wherein the first module 1 is identical to the second module 2.

The first module 1 comprises a laser heat sink 101, a semiconductor laser die 102, a fast axis collimating mirror 103, and a slow axis collimating mirror 104. The fast axis collimating lens 103 comprises a lens 103-1 and a frame 103-2, wherein the lens 103-1 is mounted on the frame 103-2 through a curing adhesive.

As shown in fig. 4, the laser heat sink 101 has a stepped structure, and a hole 105 is provided on the step, which is a stepped hole.

The semiconductor laser die 102 and the second semiconductor laser die 202 are TO packages that emit blue laser light and are polarized. The semiconductor laser die 102 is secured to the corresponding step in the hole 105 by a thermally conductive curing adhesive.

The lens frame 103-2 of the fast axis collimating lens 103 is fixed at the corresponding position of the laser heat sink 101 through curing glue, the slow axis collimating lens 104 is fixed at the corresponding position of the laser heat sink 101 through curing glue, and light emitted by the semiconductor laser tube core 102 firstly passes through the lens 103-1 of the fast axis collimating lens 103 and then passes through the slow axis collimating lens 104.

The laser heatsink 101 is in the shape of a staircase, and the holes 105 are arranged in a trapezoidal pattern of n × n (3*3 in the example).

The second module 2 comprises a second laser heat sink 201, a second semiconductor laser die 202, a second fast axis collimator 203, and a second slow axis collimator 204. The second fast axis collimator 203 comprises a second lens 203-1 and a second frame 203-2, and the second lens 203-1 is mounted on the second frame 203-2 by a curing adhesive. The mutual mounting is in the same way and position as the first module 1.

The first module 1 and the second module 2 are fixed on the radiating fin 5 through heat conduction curing glue.

The polarization beam combiner 3 is fixed at a corresponding position on the radiating fin 5 through curing glue and is arranged on light paths of light emitted from the first module 1 and the second module 2.

The focusing lens 4 comprises a focusing lens 401 and a focusing lens frame 402, wherein the focusing lens 401 is mounted in a circular hole of the focusing lens frame 402 through curing glue.

As shown in fig. 5, the heat sink 5 has a multi-piece structure, and is made of aluminum alloy or red copper, which has good heat dissipation performance.

The fan 6 is mounted on the heat sink 5 by screws to dissipate heat from the entire module.

The fast axis collimating mirror 103, the second fast axis collimating mirror 203, the slow axis collimating mirror 104, the second slow axis collimating mirror 204, the polarization beam combiner 3, and the focusing lens 401 are all coated with blue light antireflection films.

As shown in fig. 4, the

laser heat sinks

101 and 102 have the same structure, are stepped, and have two heat dissipation surfaces 106 perpendicular to each other, and are connected to the heat dissipation plate 5 through the heat conductive curing adhesive, so that the light emission polarization directions of the two sub-modules are one horizontal direction and the other vertical direction.

As shown in fig. 3 and 7, the whole module light path is as follows:

light emitted by the semiconductor laser die 102 passes through the lens 103-1 of the fast axis collimating mirror 103 and then passes through the slow axis collimating mirror 104 to become collimated light, and the collimated light is used as a collimated semiconductor laser group.

Collimated semiconductor laser groups n x n are arranged with output lasers facing in the same direction and parallel to each other

The light emitting directions of the first module 1 and the second module 2 are mutually perpendicular and are also mutually perpendicular in the horizontal direction, so that the light emitted by the two modules is perpendicularly crossed, and one polarization direction is the horizontal direction and the other polarization direction is the vertical direction and is mutually perpendicular.

The polarization beam combiner 3 is a cube prism, as shown in fig. 6, and has a beam combining surface in the middle, when two lights with polarization directions perpendicular to each other are irradiated onto the beam combining surface at 45 °, one is reflected at 90 °, and the other is directly transmitted.

The polarization beam combiner 3 is arranged on the light path of the light emitted by the first module 1 and the second module 2, the light of the two sub-modules is crossed on the beam combining surface of the polarization beam combiner 3, the included angles between the beam combining surface of the polarization beam combiner 3 and the light beams emitted by the two sub-modules are both 45 degrees, the light emitted by the two modules is vertically crossed on the beam combining surface of the polarization beam combiner 3 and is mutually vertical in the polarization direction, the laser emitted by the first module 1 is reflected for 90 degrees after passing through the beam combining surface of the polarization beam combiner 3, the laser emitted by the second module 2 is transmitted after passing through the beam combining surface of the polarization beam combiner 3, and the light transmission directions and the light axes of the two modules are overlapped and transmitted along the same direction to be combined into a beam.

The superposed laser light passes through the focusing lens 401 of the focusing lens 4 and is focused to one point.

Although the present invention has been described in detail with reference to the foregoing embodiments, it will be apparent to those skilled in the art that modifications and variations can be made in the present invention without departing from the spirit and scope of the invention. Any modification, equivalent replacement, improvement and the like made within the spirit and principle of the present invention should be included in the protection scope of the present invention.

Claims

1. A TO package semiconductor laser beam combining module, comprising:

the polarization beam combiner comprises a first module (1), a second module (2), a polarization beam combiner (3) and a focusing lens (4), wherein the first module (1) is completely the same as the second module (2), the polarization beam combiner (3) is arranged on a polarization light path of the first module (1) in the horizontal direction, the polarization beam combiner (3) is arranged on a polarization light path of the second module (2) in the vertical direction, included angles between a beam combining surface (301) of the polarization beam combiner (3) and light beams emitted by the first module (1) and the second module (2) are 45 degrees, and the focusing lens (4) is arranged on a light emitting path after the polarization beam combiner (3) is combined.

2. The TO package semiconductor laser beam combining module according TO claim 1, wherein the first module (1) comprises:

the laser device comprises a laser heat sink (101), a semiconductor laser tube core (102), a fast axis collimating mirror (103), a slow axis collimating mirror (104) and a hole (105); the semiconductor laser tube core (102), the fast axis collimating mirror (103), the slow axis collimating mirror (104) and the hole (105) are the same in quantity, the laser heat sink (101) is in a step shape and comprises more than one step surface (107) and step platform (108), the step surface (107) is provided with more than one hole (105), the semiconductor laser tube core (102) is fixed in the hole (105), the fast axis collimating mirror (103) and the slow axis collimating mirror (104) are arranged on the step platform (108), and the light path of the semiconductor laser tube core (102) sequentially passes through the fast axis collimating mirror (103) and the slow axis collimating mirror (104).

3. The TO-packaged semiconductor laser beam combining module according TO claim 2, wherein the number of the holes (105) on each stepped surface (107) is the same.

4. The TO package semiconductor laser beam combining module according TO claim 2, wherein the number of the holes (105) on the single step face (107) is the same as the number of steps.

5. A TO package semiconductor laser beam combination module according TO any one of claims 2 TO 4, characterized in that the semiconductor laser die (102) is a TO package semiconductor laser die, and the fast axis collimating mirror (103), the slow axis collimating mirror (104), the polarization beam combination mirror (3) and the focusing lens (4) are coated with antireflection coating.

6. The TO-packaged semiconductor laser beam combining module according TO claim 5, wherein the fast axis collimating lens (103) comprises a lens (103-1) and a frame (103-2), and the lens (103-1) is mounted on the frame (103-2).

7. The TO package semiconductor laser beam combining module according TO claim 2, wherein the laser heat sink (101) further comprises two heat dissipation surfaces (106) perpendicular TO each other.

8. The TO package semiconductor laser beam combination module according TO claim 1, further comprising a heat sink (5) and a fan (6), wherein the first module (1), the second module (2) and the polarization beam combiner (3) are disposed on one surface of the heat sink (5), and the fan (6) is disposed on the opposite surface.