CN118575130A

CN118575130A - Laser and laser projection equipment

Info

Publication number: CN118575130A
Application number: CN202380018428.6A
Authority: CN
Inventors: 周子楠; 卢瑶; 郭照师; 李建军
Original assignee: Qingdao Hisense Laser Display Co Ltd
Current assignee: Qingdao Hisense Laser Display Co Ltd
Priority date: 2022-03-31
Filing date: 2023-03-28
Publication date: 2024-08-30
Also published as: CN114637161A

Abstract

A laser and a laser projection device belong to the technical field of photoelectricity. The laser includes: a cartridge (100); the tube shell (100) comprises a bottom plate (101) and an annular side wall (102) positioned above the bottom plate (101); a sealing light-transmitting layer (600) connected to the annular side wall (102); wherein, the bottom plate (101), the annular side wall (102) and the sealing light-transmitting layer (600) form a sealing accommodating space; a plurality of light emitting chips (200) mounted on the bottom plate (101) of the package (100); the plurality of light emitting chips (200) comprise a first type light emitting chip (201) and a second type light emitting chip (202), and the polarization direction of the laser emitted by the first type light emitting chip (201) is different from that of the laser emitted by the second type light emitting chip (202); at least one prism (300); the prism (300) corresponds to at least one of the light emitting chips (200), and the prism (300) is used for receiving laser emitted by the corresponding light emitting chips (200) and reflecting the laser in the light emitting direction of the laser; the phase delay plate (400) is positioned in the sealed accommodating space and is parallel to the bottom plate (101), and at least part of light beams of the light emitting chip (200) are emitted to the sealed light-transmitting layer (600) after the polarization direction of the laser light is changed by the phase delay plate (400).

Description

Laser and laser projection equipment

Cross Reference to Related Applications

The application claims that the Chinese patent office, application number 202210344076.0, was filed on 3 months of 2022, the application name is a laser and laser projection device, and the Chinese patent office, application number 202221173515.8, the application name is priority of the laser Chinese patent application, the application name is incorporated by reference in its entirety, was filed on 16 months of 2022.

Technical Field

The application relates to the technical field of photoelectricity, in particular to a laser and laser projection equipment.

Background

At present, the development of the laser projection industry is very rapid, and a laser is used as one of core components in the laser projection industry to play an irreplaceable role. The semiconductor laser is formed by packaging a chip after the chip is produced. The packaging capability of the laser has a significant impact on the application, cost, performance, etc. of the laser.

Based on the development of lasers and the demand for color display, laser packages are pursuing outgoing high-quality light beams, so that it is desired to minimize the use of optical path components when applied to an optical path, resulting in miniaturization and simplification of the laser display apparatus.

Disclosure of Invention

Some embodiments of the application disclose a laser comprising:

a tube shell; the tube shell comprises a bottom plate and an annular side wall positioned above the bottom plate;

The sealing light-transmitting layer is connected with the annular side wall; wherein the bottom plate, the annular side wall and the sealing light-transmitting layer form a sealing accommodating space;

The light-emitting chips are attached to the bottom plate of the tube shell; the plurality of light emitting chips comprise a first type light emitting chip and a second type light emitting chip, and the polarization direction of the laser emitted by the first type light emitting chip is different from that of the laser emitted by the second type light emitting chip;

at least one prism; one prism corresponds to at least one of the plurality of light emitting chips, and is used for receiving the reflection of laser emitted by the corresponding plurality of light emitting chips to the light emitting direction of the laser;

The phase delay plate is positioned in the accommodating space and is parallel to the bottom plate, and at least part of light beams of the light emitting chips are emitted to the sealing light-transmitting layer after the polarization direction of the laser light is changed by the phase delay plate.

Some embodiments of the application also disclose a laser projection device, including the laser in the above technical scheme, and

A light valve modulation part positioned at the light emitting side of the laser; the light valve modulation component is used for modulating emergent light rays of the laser;

and the projection lens is positioned on the light emitting side of the light valve modulation component.

Drawings

In order to more clearly illustrate the technical solutions of the embodiments of the present application, the drawings that are needed in the embodiments of the present application will be briefly described below, and it is obvious that the drawings described below are only some embodiments of the present application, and other drawings may be obtained according to these drawings without inventive effort for a person skilled in the art.

Fig. 1 is a schematic diagram of a structure of a related art laser;

fig. 2 is a schematic structural diagram of a laser according to an embodiment of the present application;

FIG. 3 is a schematic side view of the laser of FIG. 2;

FIG. 4 is a schematic diagram showing a side view of a laser according to an embodiment of the present application;

FIG. 5 is a third schematic side view of a laser according to an embodiment of the present application;

FIG. 6 is a schematic top view of the laser of FIG. 5;

FIG. 7 is a schematic diagram of a side view of a laser according to an embodiment of the present application;

FIG. 8 is a schematic top view of the laser of FIG. 7;

FIG. 9 is a third schematic top view of a laser according to an embodiment of the present application;

fig. 10 is a schematic structural diagram of a laser according to an embodiment of the present application;

FIG. 11 is a schematic diagram of another laser according to an embodiment of the present application;

FIG. 12 is a schematic view of a structure of yet another laser according to an embodiment of the present application;

FIG. 13 is a schematic view of a structure of yet another laser according to an embodiment of the present application;

FIG. 14 is a schematic view of a laser according to another embodiment of the present application;

FIG. 15 is a schematic view of another laser according to another embodiment of the present application;

FIG. 16 is a schematic view of a structure of a laser according to another embodiment of the present application;

FIG. 17 is a schematic diagram of a laser according to another embodiment of the present application;

FIG. 18 is a schematic diagram of a laser according to another embodiment of the present application;

FIG. 19 is a schematic view of another laser according to another embodiment of the present application;

FIG. 20 is a schematic view of a structure of a laser according to still another embodiment of the present application;

FIG. 21 is a schematic view of a laser according to yet another embodiment of the present application;

FIG. 22 is a schematic diagram of a laser according to another embodiment of the present application;

FIG. 23 is a schematic view of another laser according to another embodiment of the present application;

FIG. 24 is a schematic view of a structure of yet another laser according to another embodiment of the present application;

fig. 25 is a schematic structural diagram of a laser projection apparatus according to an embodiment of the present application.

The light-emitting diode comprises a 100-tube shell, a 101-bottom plate, 102-annular side walls, 107-brackets, 200-laser chip assemblies, 201-first-class light-emitting chips, 202-second-class light-emitting chips, L1-first-class light-emitting chip rows, L2-second-class light-emitting chip rows, 300-prisms, S0-top surfaces, S1-first reflecting surfaces, S2-second reflecting surfaces, 400-phase retarders, 500-collimating lenses, 600-sealing glass, 700-ceramic insulators, T1-first-stage step surfaces, T2-second-stage step surfaces, 10-lasers, 20-light valve modulation components and 30-projection lenses.

Detailed Description

In order that the above objects, features and advantages of the application will be readily understood, a further description of the application will be rendered by reference to specific embodiments thereof which are illustrated in the appended drawings. However, the exemplary embodiments can be embodied in many forms and should not be construed as limited to the embodiments set forth herein; rather, these embodiments are provided so that this disclosure will be thorough and complete, and will fully convey the concept of the example embodiments to those skilled in the art. The same reference numerals in the drawings denote the same or similar structures, and thus a repetitive description thereof will be omitted. The words expressing the positions and directions described in the present application are described by taking the drawings as an example, but can be changed according to the needs, and all the changes are included in the protection scope of the present application. The drawings of the present application are merely schematic representations of relative positional relationships and are not intended to represent true proportions.

With the development of the display industry, higher demands are being placed on the color of the display. However, the current display technologies such as LEDs have difficulty in displaying purer colors and higher color gamut due to their limitations. Based on the above, the laser display technology has been developed, and the laser has key indexes such as high brightness, wavelength singleness and the like due to the inherent property of the laser, so that the laser can realize better color reducibility and high color gamut under higher brightness, can realize better display effect and achieve better viewing experience.

The technology of the current laser is also mature, wherein the lasers of blue, red and green in the visible light wave bands are all produced in mass, so the development of the three-color laser has become a trend. Based on the development of lasers and the demand for color display, lasers currently in mainstream use have been upgraded from single-color lasers to three-color lasers. As the brightness of lasers increases, the packaging of trichromatic lasers into a package has become a necessary trend and has been widely used in order to minimize the volume of the system.

Due to the light emitting principle of lasers with different colors, the polarization directions of the lasers emitted by the blue laser chip and the green laser chip are different from the polarization direction of the lasers emitted by the red laser chip at present. The polarization directions of the blue laser and the green laser are the same and are perpendicular to the polarization direction of the red laser. The inconsistent polarization directions of the lasers with different colors can cause problems when the lasers are used as light sources for illumination, for example, the more prominent point is that the phenomenon of different colors in multiple areas, color blocks or local color cast can occur at the projection picture end of the whole machine, and the final effect of watching the projection picture is affected.

In order to improve this phenomenon, a current solution is to provide a system component for changing the polarization state in addition to the optical path so that the polarization direction of the three-color laser light to the screen picture end is uniform when the optical path system is designed. However, this inevitably results in an increase in system cost, increases in structural complexity and assembly process, and is also disadvantageous in downsizing of the whole apparatus.

Fig. 1 is a schematic diagram of a laser in the related art.

As shown in fig. 1, the laser generally includes a package 100, a plurality of light emitting chip assemblies 200 disposed within the package 100, and a prism 300 positioned on the light emitting side of the plurality of light emitting chip assemblies 200.

Typically, a plurality of light emitting chip assemblies 200 are disposed in the package 100, and a prism is disposed on the light emitting side of each of the plurality of light emitting chip assemblies 200 for reflecting light. A plurality of light emitting chip assemblies 200 and prisms 300 on the light emitting side constitute one unit, and a plurality of units are arranged in an array in the package 100.

In the laser of the multi-chip package structure, the plurality of light emitting chip assemblies 200 include a red laser chip assembly, a green laser chip assembly, and a blue laser chip assembly. Because of the inherent nature of the laser chips, the polarization directions of the laser light emitted by the red laser chip component are usually TM modes, while the polarization directions of the laser light emitted by the blue laser chip component and the green laser chip component are usually TE modes, which are perpendicular to each other, and based on the consideration of the light efficiency of an optical system, the polarization directions of the red laser light, i.e., the TM modes inside the laser, are usually corresponding to the light with the second polarization direction of the light incident on the screen surface of the imaging picture end, and are usually called P light, and the polarization directions of the blue laser light and the green laser light are corresponding to the light with the first polarization direction of the light incident on the screen surface of the imaging picture end, and are usually called S light. Even the same optical lens and the optical screen have differences in refractive index of red laser and blue laser and green laser with different polarization directions, so that the three-color laser emitted by the laser can generate the problems of color spots, color blocks, color cast and the like at the picture end after passing through a subsequent light path.

Therefore, the embodiment of the application provides a laser, which adjusts the polarization state of the laser light emitted from the laser chip during the packaging of the laser, so that the polarization directions of the laser light emitted from the laser are the same.

Fig. 2 is a schematic structural diagram of a laser according to an embodiment of the present application; fig. 3 is a schematic side view of the laser of fig. 2.

As shown in fig. 2 and 3, the laser includes: a package 100, a plurality of light emitting chip assemblies 200, a prism 300, and a phase retarder 400.

The package 100 is used for accommodating a plurality of light emitting chip assemblies 200, and packaging the plurality of light emitting chip assemblies 200. The package 100 includes a bottom plate 101 and an annular sidewall 102 located above the bottom plate, the bottom plate 101 and the annular sidewall 102 forming a receiving space. Wherein, the material of the tube shell 100 can be metal or ceramic, the metal can be stainless steel, and the ceramic can be alumina. The base plate 101 is preferably made of a metal having a relatively good heat dissipation property, and oxygen-free copper may be used.

A plurality of light emitting chip assemblies 200 are fixed on the bottom plate 101 of the package. In particular implementations, the plurality of light emitting chip assemblies 200 includes a laser chip and a heat sink. And welding the laser chip and the heat sink by adopting a high-precision eutectic welding machine to form a laser chip assembly. The heat sink is used for radiating the laser chip, and may be made of materials such as ALN and iC with the first polarization direction, which is not limited herein.

The laser provided by the embodiment of the application comprises at least one prism 300, which is positioned in the accommodating space of the tube shell 100 and can be fixed on the bottom plate 101 of the tube shell. One prism 300 may correspond to at least one plurality of light emitting chip assemblies 200, and specifically, the prism 300 is located at a light emitting side of the corresponding plurality of light emitting chip assemblies 200, and the prism 300 is configured to receive reflection of laser light emitted from the corresponding plurality of light emitting chip assemblies 200 toward a light emitting direction of the laser.

In specific implementation, the temperature of the prism 300 and the plurality of light-emitting chip assemblies 200 is controlled between 200 ℃ and 250 ℃ by means of sintering gold paste or sintering silver paste and the like, so that the heat sink and the prism are attached to the tube shell.

The prism 300 may be in one-to-one correspondence with each of the plurality of light emitting chip assemblies 200 so as to have a plurality of prisms 300, and the prisms 300 may be provided to correspond to at least two light emitting chips.

In an embodiment of the present application, as shown in fig. 2 and 3, a plurality of light emitting chip assemblies 200 include: a first type light emitting chip 201 and a second type light emitting chip 202, wherein the polarization direction of the laser light emitted from the first type light emitting chip 201 is different from the polarization direction of the laser light emitted from the second type light emitting chip 202.

And, the laser of this embodiment further includes a sealing transparent layer 600 connected to the annular sidewall 102; wherein the bottom plate 101, the annular sidewall 102 and the sealing transparent layer 600 form a sealing accommodating space, and the plurality of first-type light emitting chips 201 and the second-type light emitting chips 202 are located in the sealing accommodating space. And a phase retarder, specifically a half-wave plate, is disposed in the accommodating space and parallel to the bottom plate 101. The light beam of at least part of the light emitting chips disposed on the base plate 101 is redirected by the phase retarder to the sealing light transmitting layer 600, and finally exits from the laser.

In some embodiments, the phase retarder is disposed corresponding to one of the first type of light emitting chip and the second type of light emitting chip, so as to change the polarization direction of one type of light emitting chip, so as to be consistent with the polarization direction of the other type of light emitting chip, thereby realizing consistent polarization direction of the three-color laser emitted by the laser.

In some embodiments, the phase-retarder may be provided for a portion of the light-emitting chips of the first type and the second type. Specifically, the phase retardation plate can be set for part but not all of the first type light emitting chips, so that the phase retardation plate is a half wave plate corresponding to the first type light emitting chips, only the polarization direction of the laser beams emitted by a part of the first type light emitting chips is changed, and in specific implementation, the half wave plate is set corresponding to half of the first type light emitting chips, thus only the polarization direction of the laser beams emitted by half of the first type light emitting chips is changed, and the laser beams emitted by the other half of the first type light emitting chips do not pass through the half wave plate, so that the original polarization direction is maintained. By the arrangement, for the first type of light emitting chip, the degree of difference between the two different polarization directions and the second type of light emitting chip is reduced, and for the same type of light emitting chip, the laser beams with the two different polarization directions are beneficial to reducing the coherence degree.

And the phase delay plate can also respectively correspond to a part of the first type light emitting chips and a part of the second type light emitting chips, and the proportion of the first type light emitting chips and the second type light emitting chips is also specifically selected to be 50%. Thus, the polarization direction of each half of the laser beams is changed in the plurality of first-type light emitting chips and the plurality of second-type light emitting chips, and the polarization direction of each remaining half of the laser beams is maintained as the original polarization direction. Thus, through the arrangement, the first type light-emitting chip and the second type light-emitting chip are provided with two different polarization directions, the degree of polarization direction difference is improved, and the laser beams with the two different polarization directions are beneficial to reducing the coherence degree for the same type light-emitting chip.

The following examples will be described by taking an example in which a phase retarder is disposed in the optical path of a laser beam of one polarization direction, and the same applies to a case in which a phase retarder portion is disposed corresponding to a certain type of light emitting chip.

Taking fig. 3 as an example, in the embodiment of the present application, at least one phase retardation plate 400 is disposed on the reflecting prism 300, and the phase retardation plate 400 may be disposed on the prism on the light emitting side of the first type light emitting chip 201 or the second type light emitting chip 202; the phase retarder 400 is configured to receive the reflected laser light from the corresponding prism 300 and change the polarization direction of the laser light emitted by the corresponding light emitting chip, so that the polarization directions of the laser light emitted by the lasers are the same.

In practice, the top surface of the prism 300 is generally a plane, so the retarder 400 may be disposed at the edge of the top surface and extend to a certain distance toward the reflecting surface of the prism, so that the laser light emitted from the laser chip assembly is incident on the retarder 400 after being reflected by the prism 300.

Since the plurality of light emitting chip assemblies 200 and the prism 300 are generally bonded to the package 100 by means of sintered gold paste or sintered silver paste, a gold plating layer may be provided on the surface of the phase retarder 400 contacting the prism 300, so that the phase retarder 400 may be bonded to the prism 300 by the same process. In addition, the phase retarder may be adhered to the prism by using high-temperature-resistant glue containing no organic matter, which is not limited herein.

The retarder 400 is only required to be disposed on the prism on the light emitting side of one of the first type light emitting chip 201 and the second type light emitting chip 202, so that the polarization direction of the laser light emitted from one type of laser chip assembly is the same as the polarization direction of the laser light emitted from the other type of laser chip assembly after passing through the retarder 400, and thus color problems caused by different polarization states can be avoided.

In practical applications, the laser device generally includes a red laser chip assembly, a green laser chip assembly, and a blue laser chip assembly, where the red laser beam emitted from the red laser chip assembly is orthogonal to the polarization direction of the green laser beam emitted from the green laser chip assembly and the blue laser beam emitted from the blue laser chip assembly. The first type of light emitting chip 201 in the embodiment of the present application may include a red laser chip assembly and the second type of light emitting chip 202 may include a green laser chip assembly and a blue laser chip assembly; or the first type light emitting chip 201 may include a green laser chip assembly and a blue laser chip assembly, and the second type light emitting chip 202 may include a red laser chip assembly, which is not limited herein.

Since the polarization directions of the red laser light, the blue laser light, and the green laser light are perpendicular to each other, the phase retarder 400 may employ a half wave plate in order to pursue the uniform polarization direction.

The laser shown in fig. 3 is taken as an example for explanation, wherein the first type of light emitting chip 201 is a red laser chip assembly, and the second type of light emitting chip 202 includes a green laser chip assembly and a blue laser chip assembly. A half wave plate may be disposed on the prism on the light emitting side of the first type of light emitting chip 201, that is, the red laser chip assembly, so as to convert the light of the second polarization direction emitted from the red laser chip assembly into the light of the first polarization direction, and maintain the same polarization direction as the light of the first polarization direction emitted from the green laser chip assembly and the blue laser chip assembly.

Of course, a half wave plate may be disposed on the prisms on the light emitting side of the second type light emitting chip 202, that is, the green laser chip assembly and the blue laser chip assembly, so as to convert the light in the first polarization direction emitted from the green laser chip assembly and the blue laser chip assembly into the light in the second polarization direction, and keep the polarization direction of the light in the second polarization direction emitted from the red laser chip assembly consistent.

In the specific implementation process, the arrangement of the phase retardation plate on the prism at the light emitting side of the red laser chip assembly, the green laser chip assembly and the blue laser chip assembly can be determined according to the layout of the red laser chip assembly, the green laser chip assembly and the blue laser chip assembly, and the arrangement is based on the principle of simplified structure and easy assembly, and is not limited herein.

Fig. 4 is a schematic diagram of a side view of a laser according to an embodiment of the application.

As shown in fig. 4, the laser further includes: a collimator lens 500 and a sealing glass 600.

The collimating lens 500 is located in the accommodating space formed by the tube 100, and may be fixed on the bottom plate 101 of the tube. In the embodiment of the present application, one collimating lens 500 corresponds to one plurality of light emitting chip assemblies 200, and the collimating lens 500 is located between the corresponding plurality of light emitting chip assemblies 200 and the corresponding prism 300. The collimating lens is used for collimating the laser beams emitted from the plurality of light emitting chip assemblies 200, so that the effect of different angles of incidence on the retarder is not required to be considered when the retarder is arranged, thereby simplifying the design.

In specific implementations, the collimating lens 500 may be a single lens or a lens group, and may specifically be an aspherical lens, a cylindrical lens, a free-form surface lens, or a fresnel lens, which is not limited herein. In addition, the reflecting surface of the prism 300 may be curved to reflect light and collimate light, and in this case, the reflecting surface of the prism 300 is preferably an aspherical curved surface, which is not limited herein.

The sealing glass 600 is positioned at the upper opening position of the tube shell 100, and the sealing glass 600 is welded with the edge of the tube shell 100, so that the laser is packaged. Specifically, the sealing glass 600 may be made of sapphire, quartz, bk7, or the like. The package 100 and the sealing glass 600 may be welded by resistance welding or n-direct welding of Au in the first polarization direction. The resistance welding method requires that the sealing glass 600 and the metal are welded together by low-temperature glass cement, and then resistance welding is performed.

The laser chip components in the laser provided by the embodiment of the application can be arranged by adopting various arrangement rules, correspondingly, the prism 300 can be deformed and designed, and then the phase retardation plates are arranged at reasonable positions in a matching way, so that the purpose that the polarization directions of laser lights emitted by the laser are the same is realized.

In some embodiments, as shown in fig. 1, the plurality of light emitting chip assemblies 200 and the prism 300 may still be arranged in a one-to-one correspondence, and a phase delay plate may be disposed on the prism on the light emitting side of each light emitting chip of the first type; or a phase delay plate can be arranged on the prism of the light emitting side of each second type of light emitting chip. The arrangement mode does not need to consider the arrangement rules of different types of laser chip components, and only needs to arrange a phase delay plate on a prism on the light emitting side of the laser chip component which needs to convert the polarization state.

In some embodiments, as shown in fig. 1, each of the laser chip assemblies is arranged in a plurality of rows along the set direction, for example, the structure shown in fig. 1 is taken as an example, the laser generally includes two rows of red laser chip assemblies, one row of green laser chip assemblies and one row of blue laser chip assemblies, and the rows of red laser chip assemblies are arranged in a replacement manner with the rows of green laser chip assemblies and the rows of blue laser chip assemblies. In this case, the polarization direction of the laser light emitted from the two rows of red laser chip assemblies may be changed, or the polarization directions of the laser light emitted from the one row of green laser chips and the one row of blue laser chips may be changed. At this time, a phase delay plate may be disposed on each prism of the light emitting side of the two red laser chip assemblies, respectively; alternatively, a phase retarder may be provided on each prism on the light-emitting side of the green laser chip module, and a phase retarder may be provided on each prism on the light-emitting side of the blue laser chip module. Therefore, the number of the phase delay plates can be reduced, the size of the phase delay plates is increased, and the stability between the phase delay plates and the prism is enhanced.

In some embodiments, as shown in fig. 2, the laser chip assemblies are arranged in a plurality of rows along the set direction, and thus the prisms 300 may also be arranged as stripe prisms extending along the row direction of the laser chip assemblies, so that one prism 300 corresponds to at least one row of the plurality of light emitting chip assemblies 200, which may reduce the number of prisms.

Taking the structure shown in fig. 2 as an example, the first type of light emitting chip 201 is a red laser chip assembly, and the second type of light emitting chip 202 is a green laser chip assembly and a blue laser chip assembly; or the first type of light emitting chip 201 is a green laser chip assembly and a blue laser chip assembly, and the second type of light emitting chip 202 is a red laser chip assembly. The two first-type light emitting chip rows and the two second-type light emitting chip rows are arranged in a replacement mode, and a strip-shaped prism is arranged on the light emitting side of each row of laser chip assemblies. A strip-shaped phase delay plate is arranged on the strip-shaped prism at the light emitting side of each first-class light emitting chip; or a strip-shaped phase delay plate is arranged on the strip-shaped prism at the light emitting side of the first second type light emitting chip so that the polarization states of finally emitted laser beams of the two laser chip assemblies are the same.

When the structure shown in fig. 1 or fig. 2 is adopted, each row of laser chip assemblies are connected in series, a pin is respectively arranged on the annular side wall 102 of the tube shell at two sides of each row of laser chip assemblies and used for connecting the laser chip assemblies of the corresponding row, one of the pins at two sides applies a positive electrode signal, and the other applies a negative electrode signal, so that the row of laser chip assemblies are driven to emit laser.

FIG. 5 is a third schematic side view of a laser according to an embodiment of the present application; fig. 6 is a schematic top view of the laser shown in fig. 5.

In some embodiments, as shown in fig. 5 and 6, the first type light emitting chips 201 in the laser are arranged in one first type light emitting chip row L1; the second type light emitting chips 202 are arranged in a second type light emitting chip row L2. For example, the first light emitting chip row L1 includes only red laser chip components, and the second light emitting chip row L2 includes green laser chip components and blue laser chip components; or the first type of light emitting chip row L1 includes a green laser chip assembly and a blue laser chip assembly, and the second type of light emitting chip row L2 includes only a red laser chip assembly.

The prism 300 includes: 0 of the first polarization direction of the top surface, 1 of the first polarization direction of the first reflecting surface and 2 of the first polarization direction of the second reflecting surface which are symmetrically arranged relative to the top surface. The first type light emitting chip row L1 is located at one side of 1 of the first polarization direction of the first reflecting surface of the prism, and the 1 of the first polarization direction of the first reflecting surface is used for receiving the laser emitted by each first type light emitting chip 201 in the first type light emitting chip row L1 and reflecting the laser in the light emitting direction of the laser; the second type light emitting chip row L2 is located at one side of 2 of the first polarization direction of the second reflecting surface of the prism, and the 2 of the first polarization direction of the second reflecting surface is used for receiving the laser emitted by each second type light emitting chip 202 in the second type light emitting chip row L2 and reflecting the laser in the light emitting direction of the laser.

The laser chip components with the same polarization direction are arranged in a row, so the phase retarder 400 can be arranged at the edge of the first polarization direction 0 on the top surface of the prism, which is close to the first polarization direction 1 on the first reflection surface; or the retarder 400 may be disposed at the edge of the prism, where 0 of the first polarization direction is close to 2 of the first polarization direction of the second reflection surface, so that the polarization directions of the finally emitted laser beams of the two laser chip assemblies are the same.

When the laser structure shown in fig. 5 is adopted, only one prism 300 needs to be provided, and by setting both opposite surfaces of the prism as reflecting surfaces, laser light emitted from two laser chip assembly rows can be reflected at the same time.

In practice, the width of 0 of the first polarization direction of the top surface of the prism 300 is greater than or equal to 4mm, so that there is a sufficient adhesion distance between the phase retarder 400 and 0 of the first polarization direction of the top surface. The height of the prism 300 is typically greater than 4mm, and specific dimensions may be designed according to the optical path.

If the laser chip assemblies included in the first type of light emitting chip row L1 are red laser chip assemblies, and the laser chip assemblies included in the second type of light emitting chip row L2 are green laser chip assemblies and blue laser chip assemblies, as shown in fig. 6, the laser is further provided with a ceramic insulator 700 on the side wall of the package. Three ceramic insulators may be provided for the three color laser chip assembly. Wherein, the red laser chip components are mutually connected in series, one of the two red laser chip components positioned at two sides is connected with the positive end of the corresponding ceramic insulator 700, and the other is connected with the negative end of the corresponding ceramic insulator 700. The green laser chip assemblies are adjacently arranged and are mutually connected in series, one of the two green laser chip assemblies positioned on two sides is connected with the positive end of the corresponding ceramic insulator 700, and the other green laser chip assembly is connected with the negative end of the ceramic insulator 700. The blue laser chip assemblies are adjacently arranged and are mutually connected in series, one of the two blue laser chip assemblies positioned on two sides is connected with one end of the positive electrode of the corresponding ceramic insulator 700, and the other blue laser chip assembly is connected with one end of the negative electrode of the ceramic insulator 700. Gold wires can be used for connection between the laser chip assembly and the ceramic insulator, and the diameter and the number of the gold wires can be selected according to the current of the laser. Through the connection relation, the laser chip assembly connected can be driven to emit laser by applying electric signals to the positive electrode and the negative electrode of the ceramic insulator.

FIG. 7 is a schematic diagram of a side view of a laser according to an embodiment of the present application; fig. 8 is a schematic top view of the laser shown in fig. 7.

In some embodiments, as shown in fig. 7 and 8, the first-type light emitting chips 201 in the laser are arranged in two first-type light emitting chip rows L1; the second type light emitting chips 202 are arranged in two second type light emitting chip rows L2. For example, only the red laser chip assembly is included in the two first-type light emitting chip rows L1, one of the two second-type light emitting chip rows L2 includes the green laser chip assembly, and the other row includes the blue laser chip assembly; or one of the two first-type light emitting chip rows L1 includes a green laser chip assembly, the other row includes a blue laser chip assembly, and the two second-type light emitting chip rows L2 include only a red laser chip assembly.

In order to share one prism 300, as shown in fig. 7, the bottom plate of the tube 100 has a stepped structure, and the bottom plate of the tube includes a first stage step surface T1 and second stage step surfaces T2 respectively located at both sides of the first stage step surface; the height of the second step surface T2 is larger than that of the first step surface T1.

The prism 300 includes: 0 of the top surface first polarization direction, 1 of the first polarization direction of the first reflecting surface and 2 of the first polarization direction of the second reflecting surface which are symmetrically arranged relative to 0 of the top surface first polarization direction.

The prism 300 is located on the first level step surface T1, two first-type light-emitting chip rows L1 are located on one side of 1 of the first polarization direction of the first reflecting surface of the prism, one first-type light-emitting chip row L1 is located on the first level step surface T1, and the other first-type light-emitting chip row is located on the second level step surface T2; the first reflection surface has a first polarization direction 1 for receiving the laser light emitted from each first type light emitting chip 201 in the two first type light emitting chip rows L1 and reflecting the laser light in the light emitting direction of the laser.

Two second-type light-emitting chip rows L2 are positioned on one side of the second reflecting surface of the prism in the first polarization direction 2, wherein one second-type light-emitting chip row L2 is positioned on the first-stage step surface T1, and the other second-type light-emitting chip row L2 is positioned on the second-stage step surface T2; the second reflection surface with the first polarization direction 2 is used for receiving the laser emitted by each second type light emitting chip 202 in the two second type light emitting chip rows L2 and reflecting the laser in the light emitting direction of the laser.

The laser chip components with the same polarization direction of the outgoing laser are positioned on the same side of the prism, so that the phase retarder 400 can be arranged at the edge of the first polarization direction 0 of the top surface of the prism, which is close to the first polarization direction 1 of the first reflection surface; alternatively, the retarder 400 may be disposed on the top surface of the prism near the edge of 0 in the first polarization direction of the second reflection surface near 2 in the first polarization direction.

When the laser structure shown in fig. 7 is adopted, only one prism 300 is required to be arranged, and two rows of laser chip assemblies positioned on the same side of the prism 300 emit light to the reflecting surface on the side of the prism. In order to prevent laser emitted by the rear-row laser chip assembly far away from the prism from being blocked, the embodiment of the application sets the bottom plate of the tube shell to be of a ladder-shaped structure, so that the front-row laser chip assembly near to the prism and the prism can be arranged on a first-stage step surface together, and the rear-row laser chip assembly far away from the prism is arranged on a second-stage step surface with higher height.

Since each side of the prism needs to receive the laser beams emitted from the two rows of laser chip assemblies, compared with the prism shown in fig. 5, the prism shown in fig. 7 has a relatively larger size, and the specific size can be selected according to the optical path, which is not limited herein.

Fig. 9 is a third schematic top view of a laser according to an embodiment of the present application.

In some embodiments, as shown in fig. 9, at least one of the laser chip assembly rows includes both a first type of light emitting chip 201 and a second type of light emitting chip 202. At this time, the phase retarder 400 no longer covers the entire surface of the prism, but is disposed on the area of the prism corresponding to the first type light emitting chip 201 or the area corresponding to the second type light emitting chip 202.

Taking the structure shown in fig. 9 as an example, the laser chip assemblies are arranged in one laser chip assembly row, wherein the first type light emitting chip 201 includes a red laser chip assembly, and the second type light emitting chip 202 includes a green laser chip assembly and a blue laser chip assembly. The laser chip components with the same polarization direction of the emergent laser light are adjacently arranged.

The prism 300 includes 0 of the top surface first polarization direction and a phase retarder of the reflective surface first polarization direction, and is disposed on the surface of the prism on the light-emitting side of the second type light emitting chip 202.

The laser may include three ceramic insulators 700. Wherein, red laser chip components are adjacently arranged and are mutually connected in series, one of the two red laser chip components positioned at two sides is connected with one end of the positive pole of the corresponding ceramic insulator 700, and the other is connected with one end of the negative pole of the corresponding ceramic insulator 700. The green laser chip assemblies are adjacently arranged and are mutually connected in series, one of the two green laser chip assemblies positioned on two sides is connected with the positive end of the corresponding ceramic insulator 700, and the other green laser chip assembly is connected with the negative end of the ceramic insulator 700. The blue laser chip assemblies are adjacently arranged and are mutually connected in series, one of the two blue laser chip assemblies positioned on two sides is connected with one end of the positive electrode of the corresponding ceramic insulator 700, and the other blue laser chip assembly is connected with one end of the negative electrode of the ceramic insulator 700. Gold wires can be used for connection between the laser chip assembly and the ceramic insulator, and the diameter and the number of the gold wires can be selected according to the current of the laser. Through the connection relation, the laser chip assembly connected can be driven to emit laser by applying electric signals to the positive electrode and the negative electrode of the ceramic insulator.

Fig. 9 illustrates only one row of laser chip assemblies, and in particular implementations, the laser may be configured with two rows of laser chip assemblies as shown in fig. 9, thereby configuring the prisms in a symmetrical configuration as shown in fig. 5; or may include more than two rows of laser chip assemblies, where each row of laser chip assemblies is designed using the same design concept as in fig. 9, without limitation.

Fig. 10 is a schematic structural diagram of a laser according to an embodiment of the present application. The laser 10 may include a bottom plate 101, a tubular sidewall 102, a plurality of light emitting chip assemblies 200, and a plurality of reflecting prisms 300, where the sealed transparent layer 600 and the bottom plate 101 enclose the sidewall 102 to form a sealed accommodating space. Unlike in the foregoing embodiment, the phase retarder 400 is disposed away from the base plate 101, the light emitting chip 200, and the reflection prism 300, and in particular, fixation may be achieved by a bracket or by connection with a side wall of the package.

In an embodiment of the present application, the material of the sidewall 102 may include ceramic, such as aluminum oxide (formula: al2O 3). In one implementation, the retarder 400 may be fixed to the sidewall 102 and the light transmissive sealing layer 600 may be fixed to the sidewall 102. Since the ceramic material is relatively easy to fix or combine with the retarder 400 and the transparent sealing layer 600, the laser 10 provided in the embodiment of the application has more processing advantages compared with the lasers with metal side walls in the related art, and can ensure the fixation firmness of the retarder 400 and the transparent sealing layer 600 with the side walls 102, and ensure the higher reliability of the laser 10.

In this example, each of the reflection prisms 300 may correspond to at least one light emitting chip 200, the light emitting chips 200 corresponding to different reflection prisms 300 may be different, and laser light emitted from each of the light emitting chips 200 may be directed to a reflection surface of the corresponding reflection prism 300, which may reflect the incident laser light in a direction away from the base plate 101 (e.g., a z-direction in fig. 10). In one implementation, a surface of the reflective prism 300 opposite to the light emitting chip 200 may be coated with a reflective film to form the reflective surface.

Similarly, in this example, the plurality of light emitting chip assemblies 200 in the laser 10 may include a first type of light emitting chip and a second type of light emitting chip, the polarization direction of the laser light emitted by the first type of light emitting chip being perpendicular to the polarization direction of the laser light emitted by the second type of light emitting chip. The color of the laser emitted by the first type light emitting chip is different from that of the laser emitted by the second type light emitting chip. In one embodiment, the laser light emitted by the first type of light emitting chip is polarized light in a first polarization direction, and the laser light emitted by the second type of light emitting chip is polarized light in a second polarization direction. The polarized light of the first polarization direction may include green laser light and blue laser light, and the polarized light of the second polarization direction may include red laser light. In an implementation, the laser light emitted by the first light emitting chip may be polarized light in the second polarization direction, and the laser light emitted by the second light emitting chip may be polarized light in the first polarization direction.

The laser 10 may have a plurality of light emitting chips of a first type and a plurality of light emitting chips of a second type. Illustratively, a part of the first type light emitting chips in the plurality of first type light emitting chips are green light chips for emitting green laser light; the rest of the first type light emitting chips are blue light chips and are used for emitting blue laser. The plurality of second-type light emitting chips are all red light chips and are used for emitting red laser. Or the plurality of first-type light emitting chips can emit green laser light or blue laser light, and the embodiment of the application is not limited. In an implementation, the plurality of first-type light emitting chips in the laser 10 may be red light chips, and the plurality of second-type light emitting chips include a plurality of green light chips and a plurality of blue light chips, which is not limited in the embodiment of the present application.

The front projection of the retarder 400 on the base plate 101 may cover the plurality of first-type light emitting chips and their corresponding reflective prisms 300, and the front projection may be located outside the plurality of second-type light emitting chips and their corresponding reflective prisms 300. Thus, the laser light emitted from the first type light emitting chip may be directed to the retarder 400 after being reflected by the corresponding reflection prism 300. The retarder 400 may rotate the polarization direction of the incident laser by 90 degrees, and thus the polarization direction of the laser emitted by the first type light emitting chip may be the same as the polarization direction of the laser emitted by the second type light emitting chip after passing through the retarder 400.

In the laser provided by the embodiment of the application, the phase delay plate is arranged on one side of the light emitting chips far away from the bottom plate, and the orthographic projection of the phase delay plate on the bottom plate covers all the first type light emitting chips and the corresponding reflecting prisms in the laser and is positioned outside all the second type light emitting chips and the corresponding reflecting prisms in the laser. Therefore, the laser emitted by the first type light emitting chip can be reflected on the corresponding reflecting prism and then emitted after the polarization direction is adjusted by 90 degrees through the phase delay plate, and the polarization direction of the laser emitted by the second type light emitting chip is not changed. The polarization direction of the laser emitted by the first type light emitting chip is changed to be the same as the polarization direction of the laser emitted by the second type light emitting chip after passing through the phase delay plate, and the polarization directions of the laser emitted by the lasers are all the same. Therefore, the difference of the transmission and reflection performance of the laser emitted by the laser and originating from different types of light emitting chips is smaller when the laser is transmitted in the subsequent optical element, the proportion of the laser with various colors emitted by the laser is changed smaller after the laser passes through the subsequent optical element, the color cast of a projection picture formed by the laser can be weakened, and the display effect of the projection picture is improved.

Fig. 11 is a schematic structural diagram of another laser according to an embodiment of the present application, fig. 11 may be a top view of fig. 10, fig. 10 may be a schematic diagram of a section b-b' of the laser shown in fig. 11, and fig. 11 does not illustrate the phase retarder 400 and the transparent sealing layer 600 in the laser 10. With continued reference to fig. 10 and 13, the laser 10 may also include a plurality of heat sinks R. The plurality of heat sinks R are in one-to-one correspondence with the plurality of light emitting chip assemblies 200 in the laser 10. The heat sink R contacts the bottom plate 101, is mounted on the bottom plate 101, and each light emitting chip 200 is mounted on the corresponding heat sink R. In one embodiment, the heat sink R and the reflecting prism 300 may be fixed to the base plate 101 by sintering with silver paste.

As shown in fig. 11, the plurality of light emitting chip assemblies 200 in the laser 10 may be arranged in a plurality of rows and a plurality of columns, and fig. 11 exemplifies that the laser 10 includes 8 light emitting chips 200 arranged in two rows and four columns, wherein the row direction is the y-direction and the column direction is the x-direction. The number and arrangement of the light emitting chips 200 in the laser 10 may also be adaptively adjusted, for example, the laser 10 may also include 10 light emitting chips 200 arranged in two rows and five columns, or 15 light emitting chips 200 arranged in three rows and five columns, which is not limited in the embodiment of the present application. In one embodiment, the pitch of adjacent light emitting chips 200 may be 1mm to 3.5 mm.

In an implementation, as shown in fig. 10 and 3, a plurality of first-type light emitting chips and a plurality of second-type light emitting chips in the laser 10 may be disposed in two independent areas, respectively, and the disposed areas of the plurality of first-type light emitting chips and the disposed areas of the plurality of second-type light emitting chips may be arranged along a target direction. If the target direction is the x direction, the x direction is perpendicular to the y direction. For example, the laser 10 includes two rows of light emitting chips 200, one of which acts as a first type of light emitting chip and the other acts as a second type of light emitting chip. The first behavior is the first type of light emitting chip and the second behavior is the second type of light emitting chip in the y direction as shown in fig. 11. In one implementation, the target direction may also be the y direction, for example, half of each row of light emitting chips are of the first type and half of each row of light emitting chips are of the second type. The number of the first type of light emitting chips and the number of the second type of light emitting chips may be equal or may not be equal, and the embodiment of the application is not limited.

In an implementation, the first type light emitting chip and the second type light emitting chip may not be disposed in two independent areas, and the first type light emitting chip and the second type light emitting chip may be disposed in a staggered manner. For example, the first type light emitting chip and the second type light emitting chip may be included in each row of the laser 10, and for example, the first type light emitting chip and the second type light emitting chip in each row may be alternately arranged one by one.

In one implementation, fig. 11 illustrates that a plurality of reflection prisms 300 in the laser 10 are in one-to-one correspondence with a plurality of light emitting chip assemblies 200, and each reflection prism 300 corresponds to one light emitting chip 200. In one implementation, one reflecting prism 300 may also correspond to a plurality of light emitting chip assemblies 200. Fig. 12 is a schematic structural diagram of yet another laser according to an embodiment of the present application. As shown in fig. 12, each of the reflection prisms 300 may correspond to a row of light emitting chips. If the laser 10 includes two rows of light emitting chips 200, the light emitting directions of the light emitting chips 200 in each row are the same, and the laser 10 may include only two reflecting prisms 300. Each of the reflection prisms 300 may have a bar shape, and an extension direction of the reflection prism is parallel to an arrangement direction of the corresponding row of light emitting chips 200. In an implementation, each reflecting prism 300 may also correspond to only a portion of the light emitting chips in the row of light emitting chips 200. For example, each reflecting prism 300 may correspond to only two light emitting chips 200, and each row of light emitting chips 200 may correspond to two reflecting prisms 300.

In embodiments of the present application, the phase retarder 400 in the laser 10 may be arranged in a variety of alternative ways. Illustratively, the phase retarder 400 may be directly secured to the sidewall 102, supported by the sidewall 102. Or the laser 10 may also include a support that may be surrounded by the side walls 102, with the phase retarder 400 being supported by the support. Alternatively, the retarder 400 may be supported by both the bracket and the side wall, e.g., one edge of the retarder 400 is fixed to the side of the bracket remote from the base plate 101, and the retarder 400 is also fixed to the side wall 102. Several alternative arrangements of phase retarders are described below in conjunction with the accompanying drawings.

In a first alternative arrangement, the laser 10 may include only one retarder 400, the retarder 400 being fixed to the side wall 102 and supported only by the side wall 102. The phase retarder 400 may have a rectangular shape. The side wall 102 may be surrounded by a plurality of sub-walls. If the side wall 102 is square, the front projection of the side wall 102 on the bottom plate 101 is substantially rectangular, and the side wall 102 may be surrounded by four sub-walls.

In one example, the phase retarder 400 may be located on a side of the sidewall 102 remote from the base plate 101. At least two opposite edges of the phase retarder 400 are fixed to the surface of the sidewall 102 remote from the bottom plate 101. As shown in fig. 10 and 11, the three edges of the phase retarder 400 are fixed to the surface of the sidewall 102 remote from the bottom plate 101. Such as three edges of the phase retarder 400, are adhered to the surfaces of the three sub-walls of the side wall 102 remote from the bottom plate 101, respectively. In one implementation, each edge of the phase retarder 400 may cover only a partial region of one of the three sub-walls of the sidewall 102. In one implementation, the sidewall 102 may have other shapes, and the number of sub-walls included in the sidewall 102 may vary accordingly. For example, the side wall 102 has a substantially pentagonal shape in front projection on the bottom plate 101, and the side wall 102 is surrounded by five sub-walls, which is not limited in the embodiment of the present application.

The edge of the light-transmitting sealing layer 600 may be fixed to the surface of the sidewall 102 remote from the bottom plate 101. As for the three sub-walls of the side wall 102 covered by the phase retarder 400, the light-transmitting seal layer 600 may be adhered to a portion of the three sub-walls not covered by the light-transmitting seal layer 600 by an adhesive; the edge of the light-transmitting sealing layer 600 may also be adhered to three edges of the side of the phase retarder 400 remote from the base plate. For a sub-wall of the side wall 102 not covered by the phase retarder 400, the light-transmissive sealing layer 600 may be directly fixed to a side of the sub-wall remote from the bottom plate. Since the phase retarder 400 is further disposed on the sidewall 102, more adhesive may be used to fix the light-transmitting seal layer 600, and the maximum thickness of the adhesive may be greater than the thickness of the light-transmitting seal layer 600, so as to ensure that the light-transmitting seal layer 600 may be fixed to the sidewall 102 by the adhesive and ensure a sealing effect on the package.

In one implementation, only two opposite edges of the retarder 400 may be fixed to two opposite sub-walls of the sidewall 102. As with the laser 10 shown in fig. 11, only the left and right edges of the retarder 400 may be fixed to the left and right sub-walls of the side wall 102, respectively, while the upper edge is not fixed to the side wall 102.

In another example, the phase retarder 400 is located in a package surrounded by the sidewall 102. The inner surfaces of at least two opposite sub-walls of the side walls 102 are provided with bosses, and the opposite edges of the phase retarder 400 are respectively fixed to the sides of the bosses on the two sub-walls away from the bottom plate 101.

Fig. 13 is a schematic structural diagram of yet another laser according to an embodiment of the present application. As shown in fig. 13, the inner surfaces of the opposite sub-walls of the side wall 102 have bosses T, and the opposite edges of the phase retarder 400 are respectively fixed to the sides of the bosses T on the two sub-walls away from the bottom plate 101. The two sub-walls are opposite in the row direction of the first type of light emitting chips, and it is necessary to ensure that the orthographic projection of the phase retarder 400 on the bottom plate 101 covers only the first type of light emitting chips and not the second type of light emitting chips. Such as the two sub-walls in the y-direction in the side wall 102, i.e., the left sub-wall and the right sub-wall in fig. 13. The left edge of the retarder 400 is fixed to the boss T on the left sub-wall of the side wall 102 and the right edge of the retarder 400 is fixed to the boss T on the right sub-wall of the side wall 102.

Fig. 14 is a schematic structural diagram of a laser according to another embodiment of the present application. The inner surfaces of the side walls 102, except for the opposite two sub-walls, have a boss T, and the inner surfaces of the sub-walls between the two sub-walls and close to the first type light emitting chips also have a boss T. As shown in fig. 14, the inner surface of the sub-wall on the upper side in the side wall 102 also has a boss T. The three edges of the phase retarder 400 are fixed to the sides of the bosses T on the three sub-walls, which are away from the bottom plate 101, respectively. In this embodiment, the fixing area of the retarder 400 and the boss T is large, and the fixing firmness of the retarder 400 is high.

In one embodiment, the boss T may be integrally formed with the sidewall 102, such as by polishing or etching a sheet of material to form the sidewall 102 with the boss T. In one implementation, the surface of the boss T remote from the base plate 101 is flat. In one embodiment, the length of the boss on each sub-wall may be equal to or less than the length of the sub-wall. In one embodiment, the boss on each sub-wall may also include a plurality of individual small bosses arranged along the length of the sub-wall. The length direction of the sub-wall is the extending direction of the parallel bottom plate 101 of the sub-wall.

In a second alternative arrangement, fig. 15 is a schematic structural diagram of another laser according to another embodiment of the present application, fig. 16 is a schematic structural diagram of yet another laser according to another embodiment of the present application, and fig. 17 is a schematic structural diagram of yet another laser according to another embodiment of the present application. Fig. 16 and 17 may be top views of the laser shown in fig. 15, and fig. 15 may be a schematic view of a section b-b' of the laser shown in fig. 16 or 17. As shown in fig. 15 to 17, the laser 10 may further comprise at least one support 103 on the basis of fig. 10 and 11. The bracket 103 may be located on the base plate 101 and surrounded by the side wall 102, and one edge (e.g., a first edge) of the phase retarder 400 may be supported by the bracket 103, e.g., fixed to a side of the bracket 103 remote from the base plate 101. The remaining three edges may still be supported by the side walls 102.

In one implementation, as shown in fig. 16, the at least one support 103 may be a bar-shaped plate-shaped support, and the bearing surface of the support 103 may extend along the y-direction. The length of the support 103 may be greater than the overall arrangement length of the plurality of first-type light emitting chips. The ends of the support 103 may be spaced from the side walls 102 (as shown in fig. 16), or both ends of the support 103 may be in contact with the side walls 102, which is not illustrated in the embodiment of the present application. When only one bracket 103 is arranged in the laser 10, the mounting process of the bracket 103 is simpler, and the preparation of the laser 10 is facilitated.

In an alternative manner of fixing the support 103, the support 103 may be fixed to the base plate 101 at the bottom to achieve fixing of the support 103. In the case where the bracket 103 is fixed to the base plate 101, the bracket 103 may be integrally formed with the base plate 101; alternatively, the bracket 103 and the bottom plate 101 may be two separate structures, and the two structures are welded to achieve the fixation of the bracket 103. In another alternative fixing manner of the bracket 103, both ends of the bracket 103 are in contact with the side wall 102, and both ends of the bracket 103 are fixed with the side wall 102 to achieve fixing of the bracket 103. In one embodiment, when the two ends of the support 103 are fixed to the side walls 102, the support 103 may not be fixed to the bottom plate 101, such as a gap between the support 103 and the bottom plate 101. In one implementation, the bracket 103 may be integrally formed with the sidewall 102; alternatively, the bracket 103 and the side wall 102 may be two separate structures, which are welded to achieve the fixation of the bracket 103.

In another embodiment, as shown in fig. 17, the at least one support 103 may also include a plurality of independent supports, and the plurality of supports may be arranged along the y-direction, and the plurality of supports 103 may support the first edge of the phase retarder 400 together. The plurality of holders are also equivalent to the one bar-shaped plate-shaped holder in fig. 16 divided into a plurality of parts, and adjacent parts are spaced apart. In one embodiment, two brackets 103 at both ends may be spaced apart from the sidewall 102 (as shown in fig. 17), or both brackets 103 at both ends may be in contact with the sidewall 102, which is not illustrated in the embodiment of the present application. In this manner, the plurality of brackets 103 may be bottom-fixed to the base plate 101 to achieve the fixation of the plurality of brackets 103.

Fig. 16 and 17 illustrate an example in which the laser 10 includes only one phase retarder 400. In one embodiment, fig. 18 is a schematic structural diagram of a laser according to another embodiment of the present application. As shown in fig. 18, the laser 10 may also include a plurality of phase retarders 400. The front projection of each retarder 400 onto the backplane 101 may cover part of the first type of light emitting chips in the laser 10 to ensure that the front projections of the plurality of retarders 400 onto the backplane 101 collectively cover all of the first type of light emitting chips in the laser 10. Each phase retarder 400 may cover one first type light emitting chip and its corresponding reflecting prism 300 (as shown in fig. 18), or may cover two or more first type light emitting chips and their corresponding reflecting prisms 300, which is not limited in the embodiment of the present application. For example, as shown in fig. 18, the plurality of phase retarders 400 may be arranged in the y-direction. The first edge of each phase retarder 400 is fixed to the bracket 103, the second edge is fixed to the sidewall, and the first edge is opposite to the second edge. In one implementation, the number of phase retarders 400 is the same as the number of brackets 103, and the first edge of each phase retarder 400 may be supported by only one bracket 103.

In a third alternative arrangement, the laser 10 comprises at least one support 103 on the base plate 101 surrounded by the side walls 102, the inner surfaces of the side walls 102 having bosses T with which the phase retarders 400 are co-supported by the at least one support 103. In one embodiment, the boss T may be integrally formed with the sidewall 102, such as by grinding or etching a sheet of material to form the sidewall 102 with the boss T. In one implementation, the surface of the support 103 away from the bottom plate 101 and the surface of the boss T away from the bottom plate 101 are both flat and parallel to the plate surface of the bottom plate 101. The two surfaces may be equidistant from the base plate 101. The phase retarder 400 is fixed to the surface of the bracket 103 away from the base plate 101 and to the surface of the boss T away from the base plate 101.

The at least one support 103 may be a bar-shaped plate-shaped support, or may include a plurality of supports 103. With respect to the optional implementation and the fixing manner of the at least one bracket 103, reference may be made to the description related to the second arrangement manner of the phase retarder 400, and the embodiments of the present application are not described herein. The number of the phase retarders 400 may be one or more. Reference may be made to the description of the arrangement of the plurality of phase retarders 400 with respect to fig. 18 in the second alternative arrangement described above. In the third alternative arrangement, the at least one bracket 103 is only one bracket, and the number of phase retarders 400 is 1. The side wall 102 in the laser 10 is surrounded by a plurality of sub-walls. The embodiment of the present application also takes the case that the orthographic projection of the side wall 102 on the bottom plate 101 is substantially rectangular. The side wall 102 is surrounded by four sub-walls, namely a first sub-wall, a second sub-wall, a third sub-wall and a fourth sub-wall, wherein the first sub-wall is opposite to the fourth sub-wall, the second sub-wall is opposite to the third sub-wall, and the second sub-wall and the third sub-wall are adjacent to the first sub-wall.

In a first example, fig. 19 is a schematic structural view of another laser according to still another embodiment of the present application, fig. 20 is a top view of the laser shown in fig. 19, and fig. 19 is a schematic view of a section b-b' of the laser shown in fig. 20. As shown in fig. 19 and 20, the inner surface of the first sub-wall has a boss T, and the boss T on the inner surface of the side wall 102 may be located only on the first sub-wall. A first type of light emitting chip in the laser 10 may be located between the boss T and the mount 103. The first edge of the phase retarder 400 is fixed to the side of the bracket 103 away from the base plate 101, and the second edge of the phase retarder 400 is fixed to the side of the boss T away from the base plate 101. The first edge is opposite to the second edge, e.g., the first edge and the second edge are opposite edges in the y-direction in the phase retarder 400. In this example, the phase retarder 400 is fixed in position by fixing the opposite edges thereof.

In one embodiment, the boss T may be a strip boss. The length of the boss T on the first sub-wall may be equal to the length of the first sub-wall (for example, the length in the x direction), or the length of the boss T may be smaller than the length of the first sub-wall (as shown in fig. 20), which is not limited in the embodiment of the present application. The preparation mode of the strip-shaped boss is simpler. In a specific implementation, the boss T on the first sub-wall may also include a plurality of independent small bosses arranged along the x-direction, which is not illustrated in the embodiment of the present application. In this way, if only one retarder 400 is included in the laser 10, the second edge of the retarder 400 is fixed to the surfaces of the small bosses away from the bottom plate 101 at the same time. In one implementation, the spacing between any two adjacent small bosses may be equal. If the laser 10 includes a plurality of retarders 400, the second edge of each retarder 400 may be fixed to the surface of one small land facing away from the base plate 101 or may be fixed to the surface of a plurality of small lands facing away from the base plate 101. In one implementation, the number of phase retarders 400, the number of small bosses on the first sub-wall, the number of supports 103, and the number of first type light emitting chips may be equal, and each phase retarder 400 is supported by one small boss and one support 103 and covers one first type light emitting chip.

In the embodiment of the present application, the specific arrangement mode, number, shape, etc. of the boss T on the first sub-wall are not limited, and only the edge of the phase retarder 400 is required to be ensured not to fall off after being fixed with the boss.

In a second example, fig. 21 is a schematic structural diagram of yet another laser according to still another embodiment of the present application, and fig. 21 does not illustrate the phase retarder 400 and the transparent sealing layer 600 in the laser. As shown in fig. 21, the inner surfaces of the first and second sub-walls in the side wall 102 each have a boss, that is, the boss T on the inner surface of the side wall 102 may be located on the first and second sub-walls. The laser 10 may include only one retarder 400, where a first edge of the retarder 400 is fixed to a surface of the support 103 away from the base plate 101, a second edge is fixed to a surface of the boss on the first sub-wall away from the base plate 101, and a third edge is fixed to a surface of the boss on the second sub-wall away from the base plate 101. Thus, the phase retarder 400 is fixed in position by fixing three edges thereof, thereby realizing the fixing of the phase retarder 400. In one implementation, the laser 10 may also include a plurality of retarders, where a third edge of the retarder 400 closest to the second sub-wall of the plurality of retarders 400 is fixed to the boss on the second sub-wall, and the other retarders 400 are fixed by only two edges. The boss on the second sub-wall may be the same as the boss on the first sub-wall, for example, the boss may be a strip boss or include a plurality of independent small bosses arranged along the x direction, and specific reference may be made to the description related to the first example, which is not repeated in the embodiments of the present application.

In one embodiment, the length of the boss on the second sub-wall (i.e. the length in the x direction) may be smaller than the overall length of the second sub-wall, and only half of the area on the second sub-wall has the boss, and only the phase retardation plate 400 is required to be disposed on the boss to cover the first type light emitting chip and the corresponding reflection prism 300. In one embodiment, the length of the boss on the second sub-wall (i.e., the length in the x-direction) may also be equal to the overall length of the second sub-wall.

In a third example, fig. 22 is a schematic structural diagram of a laser according to still another embodiment of the present application, and fig. 22 does not illustrate a phase retarder 400 and a transparent sealing layer 600 in the laser. As shown in fig. 22, the inner surfaces of the first, second and third sub-walls in the side wall 102 each have a boss, that is, the boss T on the inner surface of the side wall 102 may be located on the first, second and third sub-walls. The laser 10 may include only one retarder 400, where a first edge of the retarder 400 is fixed to a surface of the support 103 away from the base plate 101, a second edge is fixed to a surface of the boss on the first sub-wall away from the base plate 101, a third edge is fixed to a surface of the boss on the second sub-wall away from the base plate 101, and a fourth edge is fixed to a surface of the boss on the third sub-wall away from the base plate 101. Thus, the phase retarder 400 is fixed in position by fixing four edges thereof, thereby realizing the fixing of the phase retarder 400. In one implementation, the laser 10 may also include a plurality of retarders, where a third edge of the retarder 400 closest to the second sub-wall is fixed to the boss on the second sub-wall, and a fourth edge of the retarder 400 closest to the third sub-wall is fixed to the boss on the second sub-wall, and the other retarders 400 are fixed only by two edges.

The boss on the third sub-wall may be the same as the boss on the first sub-wall and the second sub-wall, for example, the boss may be a strip boss or include a plurality of independent small bosses arranged along the x direction, and specific reference may be made to the related descriptions in the first example and the second example, which are not repeated in the embodiments of the present application.

In one implementation, the four sub-walls of the sidewall 102 each have a boss, which may be annular, and the length of the boss on each sub-wall may be equal to the length of that sub-wall. The front projection of the boss on the base plate 101 may enclose all the light emitting chips 200 and their corresponding reflective prisms 300. In this way, the versatility of the sidewall 102 may be higher, and the flexibility of setting the first type light emitting chip in the laser using the sidewall 102 may be higher, without restricting the first type light emitting chip to be set only at a certain position or keeping a certain relative relation with the sidewall 102.

For example, the first type light emitting chips and the second type light emitting chips can be arranged on the bottom plate 101 at will, and only the first type light emitting chips and the corresponding reflecting prisms 300 thereof are required to be located near the side wall 102, and then only the support 103 is required to be arranged on the back side (i.e. the side opposite to the light emitting side) of the first type light emitting chips, so that the phase retardation plate 400 can be supported by the support 103 and the boss on the side wall 102, so that the phase retardation plate 400 covers the first type light emitting chips and the corresponding reflecting prisms 300 thereof.

It should be noted that the structure, the formation, the arrangement, and the fixing manner of the boss on the neutron wall in the third alternative arrangement and the boss on the neutron wall in the first alternative arrangement may be the same, and the related descriptions may be referred to each other, which is not limited by the embodiment of the present application.

In a fourth alternative arrangement, the laser 10 may comprise at least one support 103, the retarder 400 being supported only by the support 103, the edge of the retarder 400 being fixed only to the surface of the support 103 remote from the base plate 101. In this arrangement, the inner surface of the sidewall 102 may or may not have a boss.

Fig. 23 is a schematic structural view of another laser according to another embodiment of the present application, and fig. 24 is a schematic structural view of another laser according to another embodiment of the present application. Fig. 24 may be a top view of the laser shown in fig. 23, and fig. 23 may be a schematic view of a section b-b' of the laser shown in fig. 24. As shown in fig. 23 and 24, each support 103 includes a rectangular frame and four supporting legs respectively positioned at four corners of the rectangular frame, and an orthographic projection of each support 103 on the base plate 101 may enclose at least one first type light emitting chip and its corresponding reflecting prism 300. Fig. 24 exemplifies that the laser 10 comprises only one support 103, and the front projection of this support 103 on the base plate 101 encloses all the light emitting chips of the first type in the laser 10 and their corresponding reflecting prisms 300. In one implementation, the laser 10 may also include a plurality of holders 103, and the orthographic projection of each holder 103 on the base plate 101 encloses a portion of the first type of light emitting chip.

In one implementation, each support 103 may be tubular, and each support 103 may be surrounded by four solid plates. In one embodiment, each support 103 may also be surrounded by three solid plates, where the support 103 half encloses at least one light emitting chip of the first type and its corresponding reflecting prism 300. In one embodiment, the plurality of holders 103 in the laser 10 may also be distributed on opposite sides of the plurality of first-type light emitting chips and their corresponding reflective prisms 300, in which case the structure of the holders 103 may be referred to as the description of the holders 103 in the above three alternative arrangements. In one embodiment, the support 103 may also include four independent plate-shaped supports, which are disposed around at least one first-type light emitting chip and its corresponding reflecting prism 300. In the fourth alternative arrangement, the arrangement of the retarder 400 on the bracket 103 may refer to the arrangement of the retarder 400 on the sidewall 102 and the bracket 103 in the foregoing three alternative arrangements, which is not described in detail in the embodiments of the present application.

It should be noted that, in the first three alternative arrangements, the plurality of first-type light emitting chips and the plurality of second-type light emitting chips in the laser 10 are independent from each other, and the at least one bracket 103 in the laser 10 is located between the plurality of first-type light emitting chips and the plurality of second-type light emitting chips.

In one embodiment, the material of the bottom plate 101 may include metal. The material may comprise copper, such as oxygen free copper, or the material may comprise other metals such as aluminum or iron. Note that, the light emitting chip 200 generates more heat when emitting laser light, and the copper has a larger thermal conductivity. In the embodiment of the application, the bottom plate 101 is made of copper, so that heat generated by the light-emitting chip 200 arranged on the bottom plate 101 during working can be guaranteed to be conducted through the bottom plate 101 quickly, and further, the heat can be dissipated quickly, and damage to the light-emitting chip due to heat aggregation is avoided. In one embodiment, the material of the bottom plate 101 may be one or more of aluminum, aluminum nitride and silicon carbide. In one embodiment, the material of the base plate 101 may also include ceramic.

In one embodiment, the material of the support 103 may include metal or ceramic. Illustratively, the material of the bracket 103 is the same as that of the base plate 101, and the bracket 103 may be integrally formed with the base plate 101 or fixed to the base plate 101 by brazing. The material of the bracket 103 may be the same as that of the side wall 102, and the bracket 103 may be integrally formed with the side wall 102 or fixed to the side wall 102 by welding or adhering.

In the embodiment of the present application, the edge area of one side surface of the phase retarder 400 may be pre-set with solder. For example, the solder may be gold-tin solder, and the material of the solder may include gold and tin. In one implementation, the solder may cover at least two edge regions of the phase retarder 400, such as four edge regions. The solder in each edge area may be continuous, or only several spaced solder blocks may be provided, which only needs to ensure that the phase retarder 400 can be firmly fixed based on the solder, and the coverage area and the specific position of the solder in the phase retarder are not limited in the embodiment of the present application.

In one embodiment, taking the phase retarder 400 and the bracket 103 being supported together by the boss T on the sidewall 102, the edge of the phase retarder 400 may be first overlapped on the boss T on the sidewall 102 and the bracket 103 when the phase retarder 400 is fixed. The edge region of the retarder 400 is then heated to melt the solder on the retarder 400. The melted solder may then be cooled to solidify the solder and secure the phase retarder 400 to the sidewall 102 and the bracket 103. In lasers that otherwise support the retarder 400, the retarder 400 is fixed in the same manner as described above.

In one implementation, the material of the phase retarder 400 may include sapphire. The expansion coefficient of the sapphire and the ceramic sidewall is matched with higher degree, so that better connection of the phase retarder 400 and the sidewall 102 can be realized, and ceramic cracks generated due to stress are reduced. In one embodiment, the area of the retarder 400 may be as small as possible, which only needs to ensure that the laser light emitted from the first light emitting chip can be emitted into the retarder 400, so as to reduce the manufacturing cost of the laser 10.

In one embodiment, the transparent sealing layer 600 may be glass, sapphire, quartz, or Bk7 type crown glass. The manner in which the light-transmissive encapsulant layer 600 in the laser 10 is disposed is described below with reference to the accompanying drawings.

With continued reference to fig. 10, 7, 11 and 15, the edge of the transparent sealing layer 600 may be directly fixed to the surface of the sidewall 102 away from the bottom plate 101, so that the transparent sealing layer 600, the bottom plate 101 and the sidewall 102 may enclose a closed space. For example, the edge of the light-transmitting sealing layer 600 and the surface of the sidewall 102 away from the bottom plate 101 may be directly bonded with a sealant. Alternatively, the solder may be preset at the edge of the light-transmitting sealing layer 600, and the light-transmitting sealing layer 600 may be disposed at a side of the sidewall 102 remote from the bottom plate 101 after the solder is melted, so that the light-transmitting sealing layer 600 is fixed with the sidewall 102. For example, the solder is gold-tin solder.

In one implementation, referring to fig. 10, 7, 11 and 15, the laser 10 may further include a collimating lens set 500, where the collimating lens set 500 may collimate the incident laser light such that the laser light is tuned to exit near parallel light. The collimating lens group 500 is located on a side of the light transmissive encapsulant layer 600 that may be remote from the base plate 101. The collimator lens set 500 may include a plurality of collimator lenses J in one-to-one correspondence with the plurality of light emitting chip assemblies 200 in the laser 10. Each light emitting chip 200 emits laser light to the corresponding reflecting prism 300, the reflecting prism 300 reflects the incident laser light to the light-transmitting encapsulation layer 600, and the laser light can be emitted to the collimating lens J corresponding to the light emitting chip 200 after transmitting the light-transmitting encapsulation layer 600. The collimator lens J can collimate the incident laser light and then emit the collimated laser light, thereby realizing the emission of the laser 10.

The plurality of collimating lenses in the collimating lens group 500 may be integrally formed. The side of the collimating lens group 500 remote from the base plate 101 may have a plurality of convex curved surfaces curved toward the side remote from the base plate 101. The portion of each convex arc surface in the collimating lens group 500 may be regarded as a collimating lens J, and thus the collimating lens group 500 may be regarded as comprising a plurality of collimating lenses J.

In summary, in the laser provided by the embodiments of the present application, a phase retarder is disposed on a side of the light emitting chips far away from the bottom plate, and the orthographic projection of the phase retarder on the bottom plate covers each first type light emitting chip and the corresponding reflecting prism in the laser and is located outside each second type light emitting chip and the corresponding reflecting prism in the laser. Therefore, the laser emitted by the first type light emitting chip can be reflected on the corresponding reflecting prism and then emitted after the polarization direction is adjusted by 90 degrees through the phase delay plate, and the polarization direction of the laser emitted by the second type light emitting chip is not changed. The polarization direction of the laser emitted by the first type light emitting chip is changed to be the same as the polarization direction of the laser emitted by the second type light emitting chip after passing through the phase delay plate, and the polarization directions of the laser emitted by the lasers are all the same. Therefore, the difference of the transmission and reflection performance of the laser emitted by the laser and originating from different types of light emitting chips is smaller when the laser is transmitted in the subsequent optical element, the proportion of the laser with various colors emitted by the laser is changed smaller after the laser passes through the subsequent optical element, the color cast of a projection picture formed by the laser can be weakened, and the display effect of the projection picture is improved.

And referring to the fixing mode of the phase retarder and the side wall of the laser or the bracket in the examples, the coverage area of orthographic projection of the phase retarder on the bottom plate can also correspond to part of the first type light emitting chips and corresponding reflecting prisms, so that the polarization direction of the laser beams emitted by only part of the first type light emitting chips is changed. By the arrangement, for the first type of light emitting chip, the degree of difference between the two different polarization directions and the second type of light emitting chip is reduced, and for the same type of light emitting chip, the laser beams with the two different polarization directions are beneficial to reducing the coherence degree.

In another aspect of the embodiments of the present application, a laser projection apparatus is provided, and fig. 25 is a schematic structural diagram of the laser projection apparatus provided in the embodiment of the present application.

As shown in fig. 25, a laser projection apparatus provided in an embodiment of the present application includes: any of the laser light sources 10, light valve modulation section 20, and projection lens 30 described above.

In the package structure of the laser light source 10, the phase retardation plate is arranged on the prism on the light emitting side of the laser light emitting chip or at least is arranged in the light emitting path in the prism reflection direction, so that the polarization direction of the laser light emitted by one type of light emitting chip is the same as the polarization direction of the laser light emitted by the other type of light emitting chip after passing through the phase retardation plate, and the color problem caused by different polarization states can be avoided.

When the phase delay sheet is arranged in the partial light beam emergent light paths of the two types of light emitting chips, the emergent laser beams obtained from the lasers have two polarization states of light with the same color, so that on one hand, the difference state that the polarization directions of the two types of light emitting chips are completely orthogonal can be reduced, and meanwhile, the coherence degree of the light with the same color can be reduced.

The light valve modulation part 20 is located at the light emitting side of the laser 10, and the light valve modulation part 20 is used for modulating and reflecting incident light. In the embodiment of the present application, the light valve modulating component 20 may adopt a digital micro-mirror (Digital Micromirror Device, abbreviated as DMD), which is a reflective light valve device, and the surface of the DMD includes thousands of micro-mirrors, and the light ray modulation can be achieved by controlling the turning angle and the duty cycle of the micro-mirrors.

The projection lens 30 is located on the reflection light path of the light valve modulation component 20, and the projection lens 30 is used for imaging the emergent light of the light valve modulation component.

While preferred embodiments of the present application have been described, additional variations and modifications in those embodiments may occur to those skilled in the art once they learn of the basic inventive concepts. It is therefore intended that the following claims be interpreted as including the preferred embodiments and all such alterations and modifications as fall within the scope of the application.

It will be apparent to those skilled in the art that various modifications and variations can be made to the present application without departing from the spirit or scope of the application. Thus, it is intended that the present application also include such modifications and alterations insofar as they come within the scope of the appended claims or the equivalents thereof.

Claims

A laser device, which comprises a laser body, characterized by comprising the following steps:

a tube shell; the tube shell comprises a bottom plate and an annular side wall positioned above the bottom plate;

The sealing light-transmitting layer is connected with the annular side wall; wherein the bottom plate, the annular side wall and the sealing light-transmitting layer form a sealing accommodating space;

The light-emitting chips are attached to the bottom plate of the tube shell; the plurality of light emitting chips comprise a first type light emitting chip and a second type light emitting chip, and the polarization direction of the laser emitted by the first type light emitting chip is different from that of the laser emitted by the second type light emitting chip;

at least one prism; one prism corresponds to at least one of the plurality of light emitting chips, and is used for receiving the reflection of laser emitted by the corresponding plurality of light emitting chips to the light emitting direction of the laser;

The phase delay plate is positioned in the accommodating space and is parallel to the bottom plate, and at least part of light beams of the light emitting chips are emitted to the sealing light-transmitting layer after the polarization direction of the laser light is changed by the phase delay plate.
The laser of claim 1, wherein the prism comprises: the bottom surface of the prism is attached to the bottom plate, the top surface is a surface opposite to the bottom surface, the reflecting surface faces at least one light emitting chip and is used for reflecting laser beams emitted by the at least one light emitting chip, and the phase delay sheet is located at the edge, close to the reflecting surface, of the top surface of the prism and extends out of the edge of the top surface.
The laser according to claim 2, wherein each of the plurality of light emitting chips is arranged in a row along a set direction, the row simultaneously contains the first type light emitting chip and the second type light emitting chip, and the prism is provided with the phase retarder in a region corresponding to the first type light emitting chip or in a region corresponding to the second type light emitting chip.
The laser of claim 2, wherein each of said first type of light emitting chips is arranged in at least one first type of light emitting chip row and each of said second type of light emitting chips is arranged in at least one second type of light emitting chip row; the prism is provided with the phase delay plate in a row corresponding to at least one row of the first type light emitting chips or in a region corresponding to at least one row of the second type light emitting chips.

Wherein, one of the first type light emitting chip and the second type light emitting chip emits laser light with two colors, and the other emits laser light with one color.
The laser of claim 3 or 4, wherein the prisms are stripe prisms extending in a row direction of the laser chip assembly, one of the prisms corresponds to at least one row of the plurality of light emitting chips, the phase retarder is disposed on a top surface of the prism and is used for transmitting the laser beam reflected by the prism from the at least one row of the plurality of light emitting chips, or the phase retarder is disposed on a part of the top surface of the prism and is used for transmitting the laser beam reflected by the prism from the at least one row of the plurality of light emitting chips.
The laser of claim 5, wherein the prism comprises: the first reflecting surface and the second reflecting surface are symmetrically arranged with the first reflecting surface relative to the top surface; the first type light-emitting chip row is positioned on one side of the first reflecting surface of the prism; the second type of light-emitting chip row is positioned at one side of the second reflecting surface of the prism; the phase delay sheet is positioned on the edge of the top surface of the prism, which is close to the first reflecting surface; or the phase delay plate is positioned on the edge of the top surface of the prism, which is close to the second reflecting surface.
The laser of claim 2, wherein a portion of the phase retarder in contact with the top surface of the prism is provided with a gold plating layer, and the phase retarder is attached to the top surface of the prism through the gold plating layer.
The laser of claim 1, wherein the side wall has a boss facing the interior of the receiving space, the phase retarder being secured to the boss on the side wall; the material of the side wall comprises ceramic.
The laser of claim 8, wherein the side wall is surrounded by a plurality of sub-walls, wherein at least two opposite sub-walls of the plurality of sub-walls have bosses on inner surfaces thereof, and wherein opposite edges of the phase retarder are respectively fixed to sides of the bosses on the two sub-walls away from the base plate.
The laser of claim 1, further comprising at least one standoff on the base plate and surrounded by the side walls, the standoff being made of ceramic or copper, the standoff being integrally formed with the base plate or the standoff being welded to the base plate;

The phase delay plate is positioned on the at least one support, and the phase delay plate is welded and fixed with the support through solder.
The laser of claim 10, wherein the phase retarder is secured to a side of the at least one mount remote from the base plate, the phase retarder being further secured to the side wall.
The laser of claim 1, wherein the laser further comprises:

A plurality of collimating lenses, one of which corresponds to one of the plurality of light emitting chips;

the collimating lens is fixed on the bottom plate and positioned between the corresponding light emitting chips and the corresponding prisms, or

The collimating lenses are integrally formed and arranged on the outer side of the sealing light-transmitting layer, which is far away from the direction of the bottom plate.
A laser projection device comprising a laser as claimed in any one of claims 1 to 12, and a light valve modulation means located on the light exit side of the laser; the light valve modulation component is used for modulating emergent light rays of the laser;

and the projection lens is positioned on the light emitting side of the light valve modulation component.