CN217639269U - three-Hall chip-double-MCU-double-CAN current sensor - Google Patents
three-Hall chip-double-MCU-double-CAN current sensor Download PDFInfo
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- CN217639269U CN217639269U CN202221355949.XU CN202221355949U CN217639269U CN 217639269 U CN217639269 U CN 217639269U CN 202221355949 U CN202221355949 U CN 202221355949U CN 217639269 U CN217639269 U CN 217639269U
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Abstract
The application relates to a three-Hall chip-double MCU-double CAN current sensor, comprising: the device comprises a main MCU micro control unit, an auxiliary MCU micro control unit, a first high-range Hall chip, a second high-range Hall chip Cheng Huoer, a low-range Hall chip, a first CAN transceiver and a second CAN transceiver, wherein the first CAN transceiver is electrically connected with the main MCU micro control unit. The application has the following expected technical effects: when the first CAN transceiver is damaged, the second CAN transceiver works normally, and the two CAN transceivers are redundant and stand-by; and further, when any one Hall chip or CAN transceiver fails, the other path of signal is output, so that the normal operation of the function is ensured, and the safety is higher.
Description
Technical Field
The application relates to the technical field of automobile current sensors, in particular to a three-Hall chip-double-MCU-double-CAN current sensor.
Background
The current sensor is a detection device which can sense the information of the current to be detected and convert the sensed information into an electric signal meeting certain standards or other information in required forms according to a certain rule for output so as to meet the requirements of information transmission, processing, storage, display, recording, control and the like. At present, a current sensor is widely used on an electric vehicle to monitor the running current of the vehicle, so that the normal running of the electric vehicle is ensured.
The existing automobile current sensor generally only comprises a Hall chip and an MCU (micro control unit), no matter how high the functional safety level of the Hall chip and the MCU is, even though ASIL D level is achieved, when the only Hall chip fails due to faults, the current sensor can not normally output signals to the automobile BMS, safety accidents are easily caused, the problem of low safety exists generally, and the improvement is needed.
SUMMERY OF THE UTILITY MODEL
The application provides a three-Hall chip-double-MCU-double-CAN current sensor to improve the following technical problems: the current automobile current sensor fails due to faults when the only Hall chip fails, the current sensor cannot normally output signals to an automobile BMS, safety accidents are easily caused, and the problem of low safety generally exists.
The application provides a three-Hall chip-double-MCU-double-CAN current sensor, which adopts the following technical scheme:
a three-Hall chip-dual MCU-dual CAN current sensor, comprising: the device comprises a main MCU micro control unit, an auxiliary MCU micro control unit, a first high-range Hall chip, a second high-range Hall chip Cheng Huoer, a low-range Hall chip, a first CAN transceiver and a second CAN transceiver;
the first high-range Hall chip and the second high-range Cheng Huoer chip are electrically connected to the main MCU micro control unit and the auxiliary MCU micro control unit for transmitting high-range test analog quantity signals, and the low-range Hall chip is electrically connected to the main MCU micro control unit and the auxiliary MCU micro control unit for transmitting low-range test analog quantity signals;
the first high-range Hall chip also directly outputs a high-range test analog quantity signal to the automobile BMS for processing, the low-range Hall chip also directly outputs a high-range test analog quantity signal to the automobile BMS for processing, the main MCU micro control unit and the auxiliary MCU micro control unit are mutually redundant, and the signals are transmitted through SPI protocol communication;
the first CAN transceiver is electrically connected with the main MCU micro control unit, and the main MCU micro control unit performs analog-to-digital conversion on the received high-range test analog quantity signal and low-range test analog quantity signal and then outputs the signals to the automobile BMS for processing through the first CAN transceiver; the second CAN transceiver is electrically connected with the auxiliary MCU micro control unit, and the auxiliary MCU micro control unit performs analog-to-digital conversion on the received high-range test analog quantity signal and low-range test analog quantity signal and then outputs the signals to the automobile BMS for processing through the second CAN transceiver.
By adopting the technical scheme, the first high-range Hall chip, the second high-range Hall chip Cheng Huoer chip and the low-range Hall chip all transmit analog signals to the main MCU micro control unit and the auxiliary MCU micro control unit, the auxiliary MCU micro control unit and the main MCU micro control unit communicate signals in an SPI (serial peripheral interface) mode, the main MCU micro control unit and the auxiliary MCU micro control unit communicate the signals in a watchdog 'feeding' mode in a program, the signals are transmitted through SPI communication, the mutual monitoring effect is achieved, when one MCU micro control unit fails, the other MCU micro control unit resets the MCU micro control unit, and the mutual redundancy effect is achieved;
when the first high-range Hall chip fails, the second high-range Cheng Huoer chip CAN send a high-range test analog quantity signal to the main MCU, and the high-range test analog quantity signal is output from the first CAN transceiver in a communication mode; when the second high-range Cheng Huoer chip fails, the first high-range Hall chip and the low-range Hall chip CAN output normally, and the main MCU CAN also output the communication of the first CAN transceiver normally; when the low-range Hall chip fails, a high-range test analog quantity signal is output, but the problem of low detection precision occurs, but the current sensor can normally detect the current; when the first CAN transceiver is damaged, the second CAN transceiver works normally, and the two CAN transceivers are mutually redundant and stand by;
therefore, when any one Hall chip or CAN transceiver fails, the other path of signal is output, the normal operation of the function is ensured, and the safety is higher.
Optionally, the functional safety levels of the first high-range hall chip and the second high-range hall chip Cheng Huoer are both ASIL C levels.
By adopting the technical scheme, the safety of the ASIL C-level first high-range Hall chip and the second high-range Hall chip Cheng Huoer is not low, the purchase cost is not high, and the production cost of the current sensor can be greatly reduced.
Optionally, the functional safety level of the low-range hall chip is ASIL C level.
By adopting the technical scheme, the safety of the ASIL C-level low-range Hall chip is not low, the purchase cost is not high, and the production cost of the current sensor can be greatly reduced.
Optionally, the functional safety levels of the main MCU micro control unit and the sub MCU micro control unit are both ASIL B level.
Through adopting above-mentioned technical scheme, main MCU microcontrol unit and vice MCU microcontrol unit's function security level is lower relatively, and the purchase cost is also lower, and main MCU microcontrol unit and vice MCU microcontrol unit combined action simultaneously, the security is also higher, also indirectly promotes this current sensor's security on the basis of practicing thrift the cost.
Optionally, the current detection range of the first high-range hall chip and the second high-range hall chip Cheng Huoer is 200-1500A.
By adopting the technical scheme, the first high-range Hall chip and the second high-range Hall chip Cheng Huoer of the parameters are low in purchase cost, can just adapt to the working current range of the electric vehicle between 200 and 1500A when the electric vehicle works, and are more practical.
Optionally, the current detection range of the low-range hall chip is 100-300A.
By adopting the technical scheme, the low-range Hall chip with the parameters is low in purchase cost, can just adapt to the working current range of the electric vehicle between 100 and 300A when the electric vehicle works, and is more practical.
Optionally, the input power supply of the current sensor is a direct current power supply, and the voltage of the input power supply is between 4.8 and 5.2V.
By adopting the technical scheme, the direct current power supply of about 5V is more stable, and the stable and durable work of the current sensor is facilitated.
Optionally, the current sensor has a functional safety level not lower than ASIL C level.
By adopting the technical scheme, the functional safety level of the current sensor is not ASIL A level and ASIL B level, but is ASIL C level and ASIL D level with higher safety, and the current sensor is more suitable for electric vehicles.
In summary, the present application includes at least one of the following beneficial technical effects:
1. the first high-range Hall chip, the second high-range Hall chip Cheng Huoer chip and the low-range Hall chip all transmit analog quantity signals to the main MCU micro control unit and the auxiliary MCU micro control unit, signals are communicated between the auxiliary MCU micro control unit and the main MCU micro control unit in an SPI (serial peripheral interface) mode, the main MCU micro control unit and the auxiliary MCU micro control unit transmit signals through SPI communication in a watchdog watching mode and a dog feeding mode in a program, the mutual monitoring effect is achieved, when one MCU micro control unit fails, the other MCU micro control unit resets the MCU micro control unit, and the mutual redundancy effect is achieved; when the first high-range Hall chip fails, the second high-range Cheng Huoer chip CAN send a high-range test analog quantity signal to the main MCU, and the high-range test analog quantity signal is output from the first CAN transceiver in a communication mode; when the second high-range Cheng Huoer chip fails, the first high-range Hall chip and the low-range Hall chip CAN output normally, and the main MCU CAN also output the communication of the first CAN transceiver normally; when the low-range Hall chip fails, a high-range test analog quantity signal is output, but the problem of low detection precision occurs, but the current sensor can normally detect the current; when the first CAN transceiver is damaged, the second CAN transceiver works normally, and the two CAN transceivers are redundant and stand-by; further, when any one Hall chip or CAN transceiver fails, the other path of signal is output, so that the normal operation of the function is ensured, and the safety is higher;
2, the safety of the ASIL C-level Hall chip is not low, the purchase cost is not high, and the production cost of the current sensor can be greatly reduced.
Drawings
In order to more clearly illustrate the technical solutions in the embodiments of the present application, the drawings needed to be used in the description of the embodiments are briefly introduced below, and it is obvious that the drawings in the following description are only some embodiments of the present application, and it is obvious for those skilled in the art to obtain other drawings based on these drawings without creative efforts.
Fig. 1 is a schematic structural diagram of a three-hall chip-dual MCU-dual CAN current sensor according to an embodiment of the present application.
Description of the reference numerals:
101. a main MCU micro control unit; 102. a secondary MCU micro control unit; 103. a first high-range Hall chip; 104. a second high volume Cheng Huoer chip; 105. a low-range Hall chip; 106. a first CAN transceiver; 107. a second CAN transceiver.
Detailed Description
In order to make the technical problems, technical solutions and advantageous effects to be solved by the present application clearer, the present application is further described in detail below with reference to the accompanying drawings and embodiments. It should be understood that the specific embodiments described herein are merely illustrative of the present application and are not intended to limit the present application.
It will be understood that when an element is referred to as being "secured to" or "disposed on" another element, it can be directly on the other element or be indirectly on the other element. When an element is referred to as being "connected to" another element, it can be directly connected to the other element or be indirectly connected to the other element.
It will be understood that the terms "length," "width," "upper," "lower," "front," "rear," "left," "right," "vertical," "horizontal," "top," "bottom," "inner," "outer," and the like, as used herein, refer to an orientation or positional relationship indicated in the drawings that is solely for the purpose of facilitating the description and simplifying the description, and do not indicate or imply that the device or element being referred to must have a particular orientation, be constructed and operated in a particular orientation, and thus should not be considered as limiting the present application.
Furthermore, the terms "first", "second" and "first" are used for descriptive purposes only and are not to be construed as indicating or implying relative importance or to implicitly indicate the number of technical features indicated. Thus, a feature defined as "first" or "second" may explicitly or implicitly include one or more of that feature. In the description of the present application, "a plurality" means two or more unless specifically limited otherwise.
The present application is described in further detail below with reference to fig. 1.
The embodiment of the application discloses a three-Hall chip-double-MCU-double-CAN current sensor. Referring to fig. 1, the three hall chip-dual MCU-dual CAN current sensor includes: a main MCU micro control unit 101, a secondary MCU micro control unit 102, a first high-range Hall chip 103, a second high-range Hall chip Cheng Huoer 104, a low-range Hall chip 105, a first CAN transceiver 106 and a second CAN transceiver 107;
the first high-range hall chip 103 and the second high-range Cheng Huoer chip 104 are electrically connected to the main MCU micro control unit 101 and the auxiliary MCU micro control unit 102 for transmitting high-range test analog signals, and the low-range hall chip 105 is electrically connected to the main MCU micro control unit 101 and the auxiliary MCU micro control unit 102 for transmitting low-range test analog signals;
the first high-range hall chip 103 also directly outputs a high-range test analog quantity signal to the automobile BMS for processing, the low-range hall chip 105 also directly outputs a high-range test analog quantity signal to the automobile BMS for processing, the main MCU (micro control unit) 101 and the auxiliary MCU 102 are mutually redundant, and the signals are transmitted through SPI (serial peripheral interface) protocol communication;
the first CAN transceiver 106 is electrically connected with the main MCU micro control unit 101, and the main MCU micro control unit 101 performs analog-to-digital conversion on the received high-range test analog quantity signal and low-range test analog quantity signal and then outputs the signals to the automobile BMS for processing through the first CAN transceiver 106; the second CAN transceiver 107 is electrically connected to the sub-MCU 102, and the sub-MCU 102 performs analog-to-digital conversion on the received high-range test analog signal and the low-range test analog signal, and then outputs the converted signals to the car BMS through the second CAN transceiver 107 for processing.
The functional safety levels of the first high-range hall chip 103 and the second high-range hall chip Cheng Huoer are both ASIL C-level, the safety of the first high-range hall chip 103 and the second high-range hall chip Cheng Huoer chip 104 of ASIL C-level is not low, the purchase cost is not high, and the production cost of the current sensor can be greatly reduced.
The functional safety level of the low-range hall chip 105 is ASIL C level, the safety of the ASIL C level low-range hall chip 105 is not low, the purchase cost is not high, and the production cost of the current sensor can be greatly reduced.
The functional safety levels of the main MCU micro control unit 101 and the auxiliary MCU micro control unit 102 are both ASIL B levels, the functional safety levels of the main MCU micro control unit 101 and the auxiliary MCU micro control unit 102 are relatively low, the purchase cost is also relatively low, meanwhile, the main MCU micro control unit 101 and the auxiliary MCU micro control unit 102 are matched, the safety is also relatively high, and the safety of the current sensor is indirectly improved on the basis of saving the cost.
The current detection range of the first high-range Hall chip 103 and the second high-range Hall chip Cheng Huoer 104 is 200-1500A, the first high-range Hall chip 103 and the second high-range Hall chip Cheng Huoer of the parameters are low in purchase cost, and the working current range of the electric vehicle between 200-1500A can be just adapted to when the electric vehicle works, so that the electric vehicle is more practical.
The current detection range of the low-range Hall chip 105 is 100-300A, the low-range Hall chip 105 with the parameters has low purchase cost, can just adapt to the working current range of the electric vehicle between 100-300A when the electric vehicle works, and is more practical.
The input power supply of the current sensor is a direct current power supply, the voltage of the input power supply is 5V, and the direct current power supply with the voltage of 4.8V or about 5.2V and 5V in other embodiments is more stable, so that the stable and durable work of the current sensor is facilitated.
The functional safety level of the current sensor is not lower than ASIL C level, the functional safety level of the current sensor is not higher than ASIL A level and ASIL B level, but higher ASIL C level and ASIL D level, and the current sensor is more suitable for electric vehicles.
The implementation principle of the three-Hall chip-double-MCU-double-CAN current sensor in the embodiment of the application is as follows:
the first high-range Hall chip 103, the second high-range Hall chip Cheng Huoer chip 104 and the low-range Hall chip 105 all transmit analog signals to the main MCU micro control unit 101 and the auxiliary MCU micro control unit 102, signals are communicated between the auxiliary MCU micro control unit 102 and the main MCU micro control unit 101 in an SPI mode, the main MCU micro control unit 101 and the auxiliary MCU micro control unit 102 transmit the signals through SPI communication in a watchdog and dog feeding mode in a program, the mutual monitoring effect is achieved, when one MCU micro control unit fails, the other MCU micro control unit resets the MCU micro control unit, and the mutual redundancy effect is achieved;
when the first high-range hall chip 103 fails, the second high-range Cheng Huoer chip 104 has a high-range test analog signal to the main MCU micro-control unit 101, and is output from the first CAN transceiver 106 in a communication manner; when the second high-range Cheng Huoer chip 104 fails, the first high-range hall chip 103 and the low-range hall chip 105 CAN both output normally, and the main MCU micro-control unit 101 CAN also output the communication via the first CAN transceiver 106; when the low-range Hall chip 105 fails, a high-range test analog quantity signal is output, but the problem of low detection precision occurs, but the current sensor can normally detect the current; when the first CAN transceiver 106 is damaged, the second CAN transceiver 107 operates normally, and the two CAN transceivers are redundant and stand-by;
and further, when any one Hall chip or CAN transceiver fails, the other path of signal is output, so that the normal operation of the function is ensured, and the safety is higher.
The above description is only exemplary of the present application and should not be taken as limiting the present application, as any modification, equivalent replacement, or improvement made within the spirit and principle of the present application should be included in the protection scope of the present application.
Claims (8)
1. A three-Hall chip-double-MCU-double-CAN current sensor is characterized by comprising: the device comprises a main MCU (micro control unit) (101), an auxiliary MCU (102), a first high-range Hall chip (103), a second high-range Hall chip (Cheng Huoer) chip (104), a low-range Hall chip (105), a first CAN transceiver (106) and a second CAN transceiver (107);
the first high-range Hall chip (103) and the second high-range Cheng Huoer chip (104) are electrically connected to the main MCU micro control unit (101) and the auxiliary MCU micro control unit (102) for transmitting high-range test analog quantity signals, and the low-range Hall chip (105) is electrically connected to the main MCU micro control unit (101) and the auxiliary MCU micro control unit (102) for transmitting low-range test analog quantity signals;
the first high-range Hall chip (103) also directly outputs a high-range test analog quantity signal to the automobile BMS for processing, the low-range Hall chip (105) also directly outputs a high-range test analog quantity signal to the automobile BMS for processing, the main MCU (101) and the auxiliary MCU (102) are mutually redundant, and signals are transmitted through SPI (serial peripheral interface) protocol communication;
the first CAN transceiver (106) is electrically connected with the main MCU micro control unit (101), and the main MCU micro control unit (101) performs analog-to-digital conversion on the received high-range test analog quantity signal and low-range test analog quantity signal and then outputs the signals to the automobile BMS for processing through the first CAN transceiver (106); the second CAN transceiver (107) is electrically connected with the auxiliary MCU micro control unit (102), and the auxiliary MCU micro control unit (102) performs analog-to-digital conversion on the received high-range test analog quantity signal and low-range test analog quantity signal and then outputs the signals to the automobile BMS for processing through the second CAN transceiver (107).
2.A three hall chip-dual MCU-dual CAN current sensor according to claim 1, wherein the functional safety level of the first high range hall chip (103) and the second high range hall chip (104) Cheng Huoer are ASIL C level.
3. A three hall chip-dual MCU-dual CAN current sensor according to claim 1, wherein the functional safety level of the low range hall chip (105) is ASIL C level.
4. A three hall chip-dual MCU-dual CAN current sensor according to claim 1, wherein the functional safety level of the master MCU microcontrol unit (101) and the slave MCU microcontrol unit (102) are both ASIL class B.
5. A three-hall chip-dual MCU-dual CAN current sensor according to claim 1, wherein the current detection range of the first high range hall chip (103) and the second high range hall chip (104) Cheng Huoer is 200-1500A.
6. The three-Hall chip-dual-MCU-dual-CAN current sensor according to claim 1, wherein the low-range Hall chip (105) has a current detection range of 100-300A.
7. The three-Hall chip-dual-MCU-dual-CAN current sensor according to claim 1, wherein the input power of the current sensor is a DC power, and the voltage of the input power is between 4.8-5.2V.
8. The three-Hall chip-dual MCU-dual CAN current sensor of claim 1, wherein the current sensor has a functional safety level not lower than ASIL C level.
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Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
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| CN117572051A (en) * | 2023-12-05 | 2024-02-20 | 上海深启半导体科技有限公司 | Current detection method with detection accuracy and reliability |
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Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN117572051A (en) * | 2023-12-05 | 2024-02-20 | 上海深启半导体科技有限公司 | Current detection method with detection accuracy and reliability |
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