CN117572051A - Current detection method with detection accuracy and reliability - Google Patents

Current detection method with detection accuracy and reliability Download PDF

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Publication number
CN117572051A
CN117572051A CN202311658152.6A CN202311658152A CN117572051A CN 117572051 A CN117572051 A CN 117572051A CN 202311658152 A CN202311658152 A CN 202311658152A CN 117572051 A CN117572051 A CN 117572051A
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China
Prior art keywords
current
sensing circuit
current sensors
sensors
signals
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Inventor
黄禾
晏金兰
王丽斌
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Shanghai Shenqi Semiconductor Technology Co ltd
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Shanghai Shenqi Semiconductor Technology Co ltd
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Priority to CN202311658152.6A priority Critical patent/CN117572051A/en
Publication of CN117572051A publication Critical patent/CN117572051A/en
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    • GPHYSICS
    • G01MEASURING; TESTING
    • G01RMEASURING ELECTRIC VARIABLES; MEASURING MAGNETIC VARIABLES
    • G01R15/00Details of measuring arrangements of the types provided for in groups G01R17/00 - G01R29/00, G01R33/00 - G01R33/26 or G01R35/00
    • G01R15/14Adaptations providing voltage or current isolation, e.g. for high-voltage or high-current networks
    • GPHYSICS
    • G01MEASURING; TESTING
    • G01RMEASURING ELECTRIC VARIABLES; MEASURING MAGNETIC VARIABLES
    • G01R15/00Details of measuring arrangements of the types provided for in groups G01R17/00 - G01R29/00, G01R33/00 - G01R33/26 or G01R35/00
    • G01R15/14Adaptations providing voltage or current isolation, e.g. for high-voltage or high-current networks
    • G01R15/20Adaptations providing voltage or current isolation, e.g. for high-voltage or high-current networks using galvano-magnetic devices, e.g. Hall-effect devices, i.e. measuring a magnetic field via the interaction between a current and a magnetic field, e.g. magneto resistive or Hall effect devices
    • G01R15/202Adaptations providing voltage or current isolation, e.g. for high-voltage or high-current networks using galvano-magnetic devices, e.g. Hall-effect devices, i.e. measuring a magnetic field via the interaction between a current and a magnetic field, e.g. magneto resistive or Hall effect devices using Hall-effect devices
    • GPHYSICS
    • G01MEASURING; TESTING
    • G01RMEASURING ELECTRIC VARIABLES; MEASURING MAGNETIC VARIABLES
    • G01R19/00Arrangements for measuring currents or voltages or for indicating presence or sign thereof
    • G01R19/0092Arrangements for measuring currents or voltages or for indicating presence or sign thereof measuring current only

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  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Measuring Instrument Details And Bridges, And Automatic Balancing Devices (AREA)

Abstract

The current detection method has the advantages of being capable of achieving both detection accuracy and reliability. The method is applied to a current detection device, which comprises: a magnetic core, a sensor and a sensing circuit. The sensor includes two high current sensors and two low current sensors. The sensing circuit comprises a first sensing circuit and a second sensing circuit. When the two heavy current sensors work normally, signals of the two heavy current sensors are corrected by the first sensing circuit and then output to the MCU of the client, so that the accuracy of heavy current detection is improved. When one of the large current sensors fails, the other large current sensor works normally, so that the reliability of current detection is improved.

Description

Current detection method with detection accuracy and reliability
Technical Field
The application relates to the technical field of sensors, in particular to a current detection method with detection accuracy and reliability.
Background
The current sensor is a detecting device, which can sense the information of the detected current and convert the information sensed by detection into an electric signal meeting certain standard or other information output in a required form according to certain rules so as to meet the requirements of information transmission, processing, storage, display, recording, control and the like. At present, a current sensor is widely adopted on an electric vehicle to monitor the running current of the vehicle so as to ensure the normal running of the electric vehicle.
In view of the complexity of the operation process of the electric vehicle, it is highly desirable to provide a current detection method using a current sensor, and the current detection method needs to achieve high-precision, wide-range, and reliable current detection.
Disclosure of Invention
In view of this, the present application provides a current detection method that combines detection accuracy and reliability. The method is applied to a current detection device, which comprises: a magnetic core, a sensor and a sensing circuit. The sensor includes two high current sensors and two low current sensors. The sensing circuit comprises a first sensing circuit and a second sensing circuit. When the two heavy current sensors work normally, signals of the two heavy current sensors are corrected by the first sensing circuit and then output to the MCU of the client, so that the accuracy of heavy current detection is improved. When one of the large current sensors fails, the other large current sensor works normally, so that the reliability of current detection is improved.
The technical scheme provided by the application is as follows:
a current detection method that combines detection accuracy and reliability, the method being applied to a current detection device, the current detection device comprising: a magnetic core, a sensor, and a sensing circuit;
the magnetic core comprises a first notch and a second notch, wherein the length of the first notch is greater than that of the second notch;
the sensor comprises two high-current sensors and two low-current sensors;
the two high-current sensors are arranged at the first notch;
the two small current sensors are arranged at the second notch;
the sensing circuit comprises a first sensing circuit and a second sensing circuit;
the current detection method comprises the following steps:
when the two heavy current sensors work normally, signals of the two heavy current sensors are corrected by the first sensing circuit and then output to the MCU of the client, so that the accuracy of heavy current detection is improved;
when one of the large current sensors fails, the other large current sensor works normally, so that the reliability of current detection is improved.
Further, the current detection method includes:
when the two small current sensors work normally, signals of the two small current sensors are corrected by the second sensing circuit and then output to the MCU of the client, so that the accuracy of small current detection is improved;
when one of the small current sensors fails, the other small current sensor works normally, so that the reliability of current detection is improved.
Further, when one of the high-current sensors fails, the other high-current sensor may directly output a detection signal to the MCU of the client.
Further, when one of the low-current sensors fails, the other low-current sensor may directly output a detection signal to the MCU of the client.
Further, the first sensing circuit and the second sensing circuit each comprise a differential circuit module and an averaging circuit module;
one of the two large current sensors is forward output, the other of the two large current sensors is reverse output, and the output results of the two large current sensors are respectively corrected by the differential circuit module and the averaging circuit module and then output detection signals to the MCU of the client.
Further, the current detection device further includes: the third sensing circuit and the fourth sensing circuit are respectively used for transmitting the output signals of the two large-current sensors and the output signals of the two small-current sensors to the MCU of the client;
one end of the third sensing circuit is connected with the output ends of the two large-current sensors respectively, and one end of the third sensing circuit is connected with the MCU of the client;
one end of the fourth sensing circuit is connected with the output ends of the two small-current sensors respectively, and one end of the fourth sensing circuit is connected with the MCU of the client side respectively.
Further, the length of the first notch is L1, the length of the second notch is L2, L1 is set to be 10-14mm, and L2 is set to be 2-6mm;
the size of the outer surface of the magnetic core is W2W 4, W2 is set to be 36-50mm, and W4 is set to be 24-28mm;
the outer surface of the magnetic core is W1 by W3, W1 is set to be 20-24mm, and W3 is set to be 8-12mm.
Further, the thickness W5 of the core in the length direction and the thickness W6 of the core in the width direction are not equal.
Further, the input power supply of the sensor is a direct current power supply, and the voltage of the input power supply is between 4.8 and 5.2V.
The application also provides a current detection method which is used for a current detection device and has both detection accuracy and reliability, and the current detection device comprises: a magnetic core, a sensor, and a sensing circuit;
the magnetic core comprises a first notch and a second notch, wherein the length of the first notch is greater than that of the second notch;
the sensor comprises two high-current sensors and two low-current sensors;
the two high-current sensors are arranged at the first notch;
the two small current sensors are arranged at the second notch;
the sensing circuit comprises a first sensing circuit, a second sensing circuit, a third sensing circuit and a fourth sensing circuit;
the current detection method comprises the following steps:
detecting whether the two large-current sensors and the two small-current sensors work normally or not;
if all the sensors work normally, the first sensing circuit acquires signals of the two large-current sensors, corrects the signals and transmits the corrected signals to the MCU of the client; meanwhile, the second sensing circuit acquires signals of the two small current sensors, corrects the signals and transmits the corrected signals to the MCU of the client;
if one of the sensors is abnormal, the two small-current sensors work normally, and the signal of the other large-current sensor which works normally is directly transmitted to the MCU of the client through the third sensing circuit, and the second sensing circuit acquires the signals of the two small-current sensors and corrects the signals and then transmits the corrected signals to the MCU of the client;
if one small current sensor is abnormal in the sensors, the two large current sensors work normally, signals of the other small current sensor which works normally are directly transmitted to an MCU of the client through the fourth sensing circuit, and the first sensing circuit acquires the signals of the two large current sensors and corrects the signals and then transmits the corrected signals to the MCU of the client;
if one of the sensors is abnormal and one of the sensors is abnormal, the signal of the other high-current sensor and the signal of the other low-current sensor which normally work are respectively output to the MCU of the client through the third sensing circuit and the fourth sensing circuit.
There are two current detection paths for the current detection method according to the present application: 1. the 4 sensor chips work normally, signals of the two large-current sensors are corrected through the first sensing circuit and then transmitted to the MCU of the client, signals of the two small-current sensors are corrected through the second sensing circuit and then transmitted to the MCU of the client; 2. if only 1 large current sensor chip is abnormal, the signal of the other normal large current sensor is directly transmitted to the MCU of the client; if only 1 small-range sensor chip is abnormal, the signal of the other normal small-current sensor is directly transmitted to the MCU of the client; if 1 large current sensor chip is abnormal and 1 small range sensor chip is abnormal, the signal of another normal large current sensor and the signal of another normal small current sensor are directly transmitted to the MCU of the client through the third sensing circuit and the fourth sensing circuit respectively.
In the current detection method, when all the sensors work normally, the accuracy of current detection can be realized by setting the sensing circuit; under the condition of different anomalies of the sensor, the reliability of the current detection method can be effectively improved.
The current detection device comprises two large-current sensors and two small-current sensors, and can realize wide-range current detection and redundant functions in the current detection process; when the four sensors are in different working conditions, high-precision current detection can be realized through the powerful processing function of the sensing circuit, and the reliability of the current detection can be ensured.
In order to make the above objects, features and advantages of the present application more comprehensible, preferred embodiments accompanied with figures are described in detail below.
Drawings
In order to more clearly illustrate the technical solutions of the embodiments of the present application, the drawings that are needed in the embodiments will be briefly described below, it being understood that the following drawings only illustrate some embodiments of the present application and therefore should not be considered limiting the scope, and that other related drawings may be obtained according to these drawings without inventive effort for a person skilled in the art.
Fig. 1 is a schematic structural diagram of a current detection device according to an embodiment of the present disclosure;
FIG. 2 is a schematic diagram of a magnetic core according to an embodiment of the present disclosure;
FIG. 3 is a schematic diagram of a magnetic core according to an embodiment of the present disclosure;
FIG. 4 is a schematic diagram of another structure of a current detecting device according to an embodiment of the present disclosure;
fig. 5 is a schematic diagram showing a specific structure in the embodiment shown in fig. 4.
Reference numerals: the magnetic core 10, the first notch 11, the second notch 12, the high-current sensor 21, the small-range sensor 22, the sensing circuit 30, the first sensing circuit 31, the second sensing circuit 32, the third sensing circuit 33, and the fourth sensing circuit 34.
Detailed Description
The following description of the embodiments of the present application will be made clearly and completely with reference to the drawings in the embodiments of the present application, and it is apparent that the described embodiments are only some embodiments of the present application, not all embodiments. The components of the embodiments of the present application, which are generally described and illustrated in the figures herein, may be arranged and designed in a wide variety of different configurations. Thus, the following detailed description of the embodiments of the present application, as provided in the accompanying drawings, is not intended to limit the scope of the application, as claimed, but is merely representative of selected embodiments of the application. All other embodiments, which can be made by those skilled in the art based on the embodiments of the present application without making any inventive effort, are intended to be within the scope of the present application.
It should be noted that: like reference numerals and letters denote like items in the following figures, and thus once an item is defined in one figure, no further definition or explanation thereof is necessary in the following figures. Meanwhile, in the description of the present application, the terms "first", "second", and the like are used only to distinguish the description, and are not to be construed as indicating or implying relative importance.
Referring to fig. 1, the present application provides a current detection method that combines detection accuracy and reliability. The method is applied to a current detection device, and the current detection device comprises: a magnetic core 10, a sensor and a sensing circuit 30.
The magnetic core 10 includes a first notch 11 and a second notch 12, wherein the length of the first notch 11 is greater than the length of the second notch 12. As shown in fig. 2, the length L1 of the first notch 11 is greater than the length L2 of the second notch 12.
The sensors include two high current sensors 21 and two low current sensors 22.
Two high current sensors 21 are placed in the first gap 11. Two high current sensors 21 are placed back-to-back in the first gap 11. And the surfaces of the two high-current sensors 21 facing away from the back-to-back respectively face the notches (rather than the core 10).
Two low current sensors 22 are placed in the second gap 12. Two low current sensors 22 are placed back-to-back in the second gap 12. And the surfaces of the two low current sensors 22 facing away from the back-to-back respectively face the notch (rather than the core 10).
The sensing circuit 30 includes a first sensing circuit 31 and a second sensing circuit 32. The first sensing circuits 31 are electrically connected to the two large current sensors 21, respectively. The second sensing circuit 32 is electrically connected to the two low current sensors 22, respectively.
The current detection method comprises the following steps:
when the two heavy current sensors 21 work normally, signals of the two heavy current sensors 21 are corrected by the first sensing circuit 31 and then output to the MCU of the client, so that accuracy of heavy current detection is improved.
When one of the large current sensors 21 malfunctions, the other large current sensor 21 normally operates, thereby improving the reliability of current detection.
In this embodiment, there are two current detection paths in the current detection method involved: 1. all the 4 sensor chips work normally, the two large-current sensors 21 are corrected by the first sensing circuit 31, and the corrected large-current sensors are transmitted to the MCU of the client; the two low-current sensors 22 are corrected by the second sensing circuit 32, and the corrected low-current sensors are transmitted to the MCU of the client. 2. When one of the large current sensors 21 malfunctions, the other large current sensor 21 normally operates, thereby improving the reliability of current detection. When one of the small current sensors 22 malfunctions, the other small current sensor 22 normally operates, thereby improving the reliability of current detection.
In one embodiment, when one of the high current sensors 21 fails, the other high current sensor 21 can be understood as operating properly: the other high-current sensor 21 may directly output the detection signal to the MCU of the client.
In one embodiment, when one of the low current sensors 22 fails, the other low current sensor 22 may operate properly as follows: the other low current sensor 22 may directly output the detection signal to the MCU of the client.
In one embodiment, the first sensing circuit 31 and the second sensing circuit 32 each include a differential circuit module and an averaging circuit module. One of the two large current sensors outputs forward, the other of the two large current sensors outputs backward, the output results of the two large current sensors are differentiated by the differential circuit module, and then the detection signals are output to the MCU of the client after being corrected by the averaging circuit module. The forward output or the reverse output of the current sensor can be realized by adjusting the internal data of the sensor (Hall chip). In this embodiment, the specific structures of the differential circuit module and the averaging circuit module may be designed according to actual requirements, so long as the detection signals of the plurality of sensors can be corrected.
In one embodiment, referring to fig. 4 and 5, the current detection device further includes: a third sensing circuit 33 and a fourth sensing circuit 34. When one of the large current sensors 21 fails and one of the small current sensors 22 fails, the signal of the other large current sensor 21 that is operating normally and the signal of the other small current sensor 22 that is operating normally are output to the MCU of the client through the third and fourth sensing circuits 33 and 34, respectively. The third sensing circuit 33 and the fourth sensing circuit 34 are respectively configured to transmit the output signals of the two large current sensors and the output signals of the two small current sensors to the MCU of the client.
One end of the third sensing circuit 33 is connected with the output ends of the two large-current sensors respectively, and one end of the third sensing circuit 33 is connected with the MCU of the client respectively.
One end of the fourth sensing circuit 34 is connected with the output ends of the two small current sensors respectively, and one end of the fourth sensing circuit 34 is connected with the MCU of the client respectively.
As shown in fig. 5, the third sensing circuit 33 includes two signal transmission circuits, one of which includes an inverter. The inverter is electrically connected with the heavy current sensor which is reversely output in the two heavy current sensors and is used for converting the output signal of the heavy current sensor which is reversely output into forward output and then transmitting the forward output signal to the MCU of the client.
The fourth sensing circuit 34 includes two signal transmission circuits, one of which includes an inverter. The inverter is electrically connected with the small current sensor which is reversely output in the two small current sensors and is used for converting the output signal of the small current sensor which is reversely output into forward output and then transmitting the forward output signal to the MCU of the client.
When only one of the two large current sensors can normally output a signal and only one of the two small current sensors can normally output a signal, the large current sensor capable of normally outputting a signal and the small current sensor capable of normally outputting a signal output signals are output to the MCU of the client through the third sensing circuit 33 and the fourth sensing circuit 34, respectively.
Referring to fig. 4 and 5 of the present application, it can be seen that after the third sensing circuit 33 and the fourth sensing circuit 34 are provided, real-time detection of signals of four current sensors can be realized, and when two large current sensors work normally, a user can use the signal transmitted by the first sensing circuit, so as to improve detection accuracy; when the two small-current sensors work normally, a user can adopt signals transmitted by the second sensing circuit, so that the detection precision is improved; when one of the two large-current sensors cannot work normally, and/or when one of the two small-current sensors cannot work normally, the user can adopt signals transmitted by the third sensing circuit and/or the fourth sensing circuit, the reliability of system detection is improved, and more data selections are provided for the user.
In this embodiment, the current detection method further includes a current detection path: if there are 1 large current sensor 21 chips and 1 small current sensor chips abnormal, the signals of the other normal large current sensor 21 and the other normal small current sensor 22 are transmitted to the MCU of the client through the third sensing circuit 33 and the fourth sensing circuit 34, respectively, so that the reliability of current detection is further improved.
In one embodiment, the first notch 11 has a length L1, the second notch 12 has a length L2, L1 is set to 10-14mm, and L2 is set to 2-6mm. The outer surface of the core 10 has a dimension W2 x W4, W2 is set to 36-50mm, and W4 is set to 24-28mm. The outer surface of the core 10 has a size W1 x W3, W1 is set to 20-24mm, and W3 is set to 8-12mm.
In a specific embodiment of the present application, L1 is set to 12mm, L2 is set to 4mm, W1 is set to 22mm, W3 is set to 10mm, W2 is set to 48mm, and W4 is set to 26mm.
In one embodiment, the thickness W5 of the magnetic core 10 in the length direction and the thickness W6 of the magnetic core 10 in the width direction are not equal. In this embodiment, the magnetic core 10 is configured to be shaped, the thickness W5 of the magnetic core 10 in the length direction may be smaller than the thickness W6 of the magnetic core 10 in the width direction, the magnetic core 10 is set narrower at a longer position, and saturation of the magnetic core 10 at that position may be avoided.
In one embodiment, referring to fig. 3, fig. 3 is a front view of the magnetic core 10 structure of the embodiment of fig. 2. W7 in FIG. 3 is set to 8-12mm, and in one particular embodiment W7 may be set to 10mm.
In one embodiment, the input power to the sensor referred to herein is a DC power source, and the voltage of the input power source is between 4.8-5.2V.
The application also provides a current detection method taking detection accuracy and reliability into consideration, the method is applied to a current detection device, and the current detection device comprises: a magnetic core 10, a sensor and a sensing circuit 30. The magnetic core 10 includes a first notch 11 and a second notch 12, wherein the length of the first notch 11 is greater than the length of the second notch 12. The sensors include two high current sensors 21 and two low current sensors 22. Two high current sensors 21 are placed in the first gap 11. Two low current sensors 22 are placed in the second gap 12. The sensing circuit 30 includes a first sensing circuit 31 and a second sensing circuit 32.
The current detection method comprises the following steps:
it is detected whether or not the two large current sensors 21 and the two small current sensors 22 are operating normally.
If the sensors all work normally, the first sensing circuit 31 acquires the signals of the two large current sensors 21, corrects the signals, and transmits the corrected signals to the MCU of the client. Meanwhile, the second sensing circuit 32 acquires the signals of the two small current sensors 22, corrects the signals, and transmits the corrected signals to the MCU of the client.
If one of the sensors has an abnormal large current sensor 21 and both small current sensors 22 work normally, the signal of the other large current sensor 21 working normally is directly transmitted to the MCU of the client, and the second sensing circuit 32 acquires the signals of the two small current sensors 22, corrects the signals and transmits the corrected signals to the MCU of the client.
If one small current sensor 22 is abnormal and both large current sensors 21 work normally, the signal of the other small current sensor 22 working normally is directly transmitted to the MCU of the client, and the first sensing circuit 31 acquires the signals of the two large current sensors 21 and corrects the signals and transmits the corrected signals to the MCU of the client.
If one of the sensors has an abnormal large current sensor 21 and one of the small current sensors 22 has an abnormal small current sensor 22, the signal of the other large current sensor 21 and the signal of the other small current sensor 22 are output to the MCU of the client through the electric sensing circuit 33 and the fourth sensing circuit 34.
If both the large current sensors 21 are abnormal, only the two small current sensors 22 are used to detect/acquire current data of a small range.
If both the small current sensors 22 are abnormal, only the two large current sensors 21 are used to detect/acquire current data of a wide range, and only the two large current sensors 21 are used to detect/acquire current data of a small range (detection accuracy is lowered).
If both the two large current sensors 21 and the two small current sensors 22 are abnormal, the whole current detection device is abnormal, and the subsequent system maintenance stage is entered.
Three current detection paths exist in the current detection method related to the application: 1. all the 4 sensor chips work normally, the two large-current sensors 21 are corrected through the first sensing circuit 31 and then transmitted to the MCU of the client, and the two small-current sensors 22 are corrected through the second sensing circuit 32 and then transmitted to the MCU of the client. 2. If only 1 of the large current sensor 21 chips are abnormal, the other normal large current sensor 21 directly transmits a signal to the MCU of the client. If only 1 small current sensor chip is abnormal, another normal small current sensor 22 directly transmits a signal to the MCU of the client. 3. If there are 1 large current sensor 21 chips and 1 small current sensor chips abnormal, the signals of the other normal large current sensor 21 and the other normal small current sensor 22 are transmitted to the MCU of the client through the electric sensing circuit 33 and the fourth sensing circuit 34, respectively.
In the current detection method, when all the sensors work normally, the accuracy of current detection can be realized by the arrangement of the sensing circuit 30. Under the condition that the sensor is in different anomalies, the reliability of the current detection method can be effectively improved.
The current detection device comprises two large current sensors 21 and two small current sensors 22, and can realize wide-range current detection and redundant functions of the current detection process. When the four sensors are in different working conditions, high-precision current detection can be realized through the powerful processing function of the sensing circuit 30, and the reliability of current detection can be ensured.
In the current detection method, when all the sensors work normally, the accuracy of current detection can be realized by the arrangement of the sensing circuit 30. Under the condition of different anomalies of the sensor, the reliability of the current detection method can be effectively improved.
The foregoing description is only of the preferred embodiments of the present application and is not intended to limit the same, but rather, various modifications and variations may be made by those skilled in the art. Any modification, equivalent replacement, improvement, etc. made within the spirit and principles of the present application should be included in the protection scope of the present application. It should be noted that: like reference numerals and letters denote like items in the following figures, and thus once an item is defined in one figure, no further definition or explanation thereof is necessary in the following figures.
The foregoing is merely specific embodiments of the present application, but the scope of the present application is not limited thereto, and any person skilled in the art can easily think about changes or substitutions within the technical scope of the present application, and the changes and substitutions are intended to be covered by the scope of the present application. Therefore, the protection scope of the present application shall be subject to the protection scope of the claims.

Claims (10)

1. A current detection method that combines detection accuracy and reliability, the method being applied to a current detection device, the current detection device comprising: a magnetic core, a sensor, and a sensing circuit;
the magnetic core is characterized by comprising a first notch and a second notch, wherein the length of the first notch is larger than that of the second notch;
the sensor comprises two high-current sensors and two low-current sensors;
the two high-current sensors are arranged at the first notch;
the two small current sensors are arranged at the second notch;
the sensing circuit comprises a first sensing circuit and a second sensing circuit;
the current detection method comprises the following steps:
when the two heavy current sensors work normally, signals of the two heavy current sensors are corrected by the first sensing circuit and then output to the MCU of the client, so that the accuracy of heavy current detection is improved;
when one of the large current sensors fails, the other large current sensor works normally, so that the reliability of current detection is improved.
2. The current detection method according to claim 1, wherein the current detection method includes:
when the two small current sensors work normally, signals of the two small current sensors are corrected by the second sensing circuit and then output to the MCU of the client, so that the accuracy of small current detection is improved;
when one of the small current sensors fails, the other small current sensor works normally, so that the reliability of current detection is improved.
3. The current detection method according to claim 2, wherein when one of the high-current sensors fails, the other high-current sensor can directly output a detection signal to the MCU of the client.
4. The current detection method according to claim 2, wherein when one of the small current sensors fails, the other small current sensor can directly output a detection signal to the MCU of the client.
5. The current detection method according to any one of claims 1 to 4, wherein the first sensing circuit and the second sensing circuit each include a differential circuit module and an averaging circuit module;
one of the two large current sensors is forward output, the other of the two large current sensors is reverse output, and the output results of the two large current sensors are respectively corrected by the differential circuit module and the average circuit module in the first sensing circuit and then output detection signals to the MCU of the client;
one of the two small current sensors is forward output, the other of the two small current sensors is reverse output, and the output results of the two small current sensors are respectively corrected by the differential circuit module and the average circuit module in the second sensing circuit and then output detection signals to the MCU of the client.
6. The current detection method according to claim 5, wherein the current detection device further comprises: the third sensing circuit and the fourth sensing circuit are respectively used for transmitting the output signals of the two large-current sensors and the output signals of the two small-current sensors to the MCU of the client;
one end of the third sensing circuit is connected with the output ends of the two large-current sensors respectively, and one end of the third sensing circuit is connected with the MCU of the client;
one end of the fourth sensing circuit is connected with the output ends of the two small-current sensors respectively, and one end of the fourth sensing circuit is connected with the MCU of the client side respectively.
7. The current detecting method according to claim 6, wherein the first notch has a length L1, the second notch has a length L2, L1 is set to 10 to 14mm, and L2 is set to 2 to 6mm;
the size of the outer surface of the magnetic core is W2W 4, W2 is set to be 36-50mm, and W4 is set to be 24-28mm;
the outer surface of the magnetic core is W1 by W3, W1 is set to be 20-24mm, and W3 is set to be 8-12mm.
8. The current detecting method according to claim 7, wherein a thickness W5 of the magnetic core in a length direction and a thickness W6 of the magnetic core in a width direction are not equal.
9. The method of claim 7, wherein the input power to the sensor is a dc power and the voltage of the input power is between 4.8V and 5.2V.
10. A current detection method that combines detection accuracy and reliability, the method being applied to a current detection device, the current detection device comprising: a magnetic core, a sensor, and a sensing circuit;
the magnetic core is characterized by comprising a first notch and a second notch, wherein the length of the first notch is larger than that of the second notch;
the sensor comprises two high-current sensors and two low-current sensors;
the two high-current sensors are arranged at the first notch;
the two small current sensors are arranged at the second notch;
the sensing circuit comprises a first sensing circuit, a second sensing circuit, a third sensing circuit and a fourth sensing circuit;
the current detection method comprises the following steps:
detecting whether the two large-current sensors and the two small-current sensors work normally or not;
if all the sensors work normally, the first sensing circuit acquires signals of the two large-current sensors, corrects the signals and transmits the corrected signals to the MCU of the client; meanwhile, the second sensing circuit acquires signals of the two small current sensors, corrects the signals and transmits the corrected signals to the MCU of the client;
if one of the sensors is abnormal, the two small-current sensors work normally, and the signal of the other large-current sensor which works normally is directly transmitted to the MCU of the client through the third sensing circuit, and the second sensing circuit acquires the signals of the two small-current sensors and corrects the signals and then transmits the corrected signals to the MCU of the client;
if one small current sensor is abnormal in the sensors, the two large current sensors work normally, signals of the other small current sensor which works normally are directly transmitted to an MCU of the client through the fourth sensing circuit, and the first sensing circuit acquires the signals of the two large current sensors and corrects the signals and then transmits the corrected signals to the MCU of the client;
if one of the sensors is abnormal and one of the sensors is abnormal, the signal of the other high-current sensor and the signal of the other low-current sensor which normally work are respectively output to the MCU of the client through the third sensing circuit and the fourth sensing circuit.
CN202311658152.6A 2023-12-05 2023-12-05 Current detection method with detection accuracy and reliability Pending CN117572051A (en)

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