CN217616214U

CN217616214U - Power transistor with MOS structure

Info

Publication number: CN217616214U
Application number: CN202221262645.9U
Authority: CN
Inventors: 张泽华
Original assignee: Shenzhen Fairchild Microelectronics Co ltd
Current assignee: Shenzhen Fairchild Microelectronics Co ltd
Priority date: 2022-05-25
Filing date: 2022-05-25
Publication date: 2022-10-21
Anticipated expiration: 2032-05-25

Abstract

The utility model provides a power transistor of MOS structure relates to the semiconductor field. This power transistor of MOS structure, including the body, the bottom fixedly connected with pin of body, the clamp has been cup jointed on the surface of pin, the inner wall fixedly connected with brush hair of clamp, the left side fixedly connected with equipment board of clamp, the screw hole that is linked together with the back is seted up in the front of equipment board, the quantity of clamp is three, through connecting rod fixed connection between the three clamp, clamp is total two sets, and the overlap joint forms the annularity between two sets of clamps. This power transistor of MOS structure through mutually supporting of clamp, brush hair and connecting rod, reaches and to carry out cleaning to three pin surface simultaneously, can also avoid causing the damage to the pin in addition, can pile up more dust on the power transistor who has solved current MOS structure uses after a period on the pin, and the dust on the pin causes the cracked problem of pin easily when clean.

Description

Power transistor with MOS structure

Technical Field

The utility model relates to the field of semiconductor technology, specifically be a power transistor of MOS structure.

Background

The transistor is a solid semiconductor device (including diode, triode, field effect transistor, thyristor, etc., sometimes referred to as bipolar device), and has multiple functions of detection, rectification, amplification, switching, voltage stabilization, signal modulation, etc. The transistor, which is a type of variable current switch, is capable of controlling an output current based on an input voltage. Different from a common mechanical switch, the transistor utilizes an electric signal to control the opening and closing of the transistor, so that the switching speed can be very high, the switching speed in a laboratory can reach more than 100GHz, more dust can be accumulated on the pin after the power transistor with the existing MOS structure is used for a period of time, and the pin is easily broken due to the dust on the pin when the power transistor is cleaned.

SUMMERY OF THE UTILITY MODEL

The utility model aims at providing a power transistor of MOS structure, the power transistor who has solved current MOS structure can pile up more dust on using a period back pin, and the dust on the pin causes the cracked problem of pin easily when clean.

Technical scheme

In order to achieve the above purpose, the utility model discloses a following technical scheme realizes: the utility model provides a power transistor of MOS structure, includes the body, the bottom fixedly connected with pin of body, the clamp has been cup jointed on the surface of pin, the inner wall fixedly connected with brush hair of clamp, the left side fixedly connected with equipment board of clamp, the screw hole that is linked together with the back is seted up in the front of equipment board.

Furthermore, the number of the hoops is three, and the three hoops are fixedly connected through connecting rods.

Furthermore, the two sets of clamps are provided, and the two sets of clamps are overlapped to form a ring.

Furthermore, the number of the assembling plates and the number of the threaded holes are two, and a screw rod is connected between the two threaded holes in a threaded manner.

The utility model provides a power transistor of MOS structure. The method has the following beneficial effects:

1. this power transistor of MOS structure through mutually supporting of clamp, brush hair and connecting rod, reaches and to carry out cleaning to three pin surface simultaneously, can also avoid causing the damage to the pin in addition, can pile up more dust on the power transistor who has solved current MOS structure uses after a period on the pin, and the dust on the pin causes the cracked problem of pin easily when clean.

2. This power transistor of MOS structure through mutually supporting of equipment board, screw hole and screw rod, reaches and to demolish the clamp from the pin outside, is convenient for clean the brush hair, avoids piling up too much dust on the brush hair and influences clean effect.

Drawings

FIG. 1 is a schematic structural view of the present invention;

fig. 2 is a schematic view showing the structure of the clip, the brush and the assembling plate of fig. 1 according to the present invention.

Wherein, 1 body, 2 pins, 3 clamps, 4 brush hairs, 5 equipment boards, 6 screw holes, 7 connecting rods, 8 screw rods.

Detailed Description

As shown in fig. 1-2, the embodiment of the utility model provides a power transistor of MOS structure, including body 1, the bottom fixedly connected with pin 2 of body 1, clamp 3 has been cup jointed on the surface of pin 2, the quantity of clamp 3 is three, through connecting rod 7 fixed connection between the three clamp 3, clamp 3 has two sets altogether, the overlap joint forms annularity between two sets of clamps 3, the inner wall fixedly connected with brush hair 4 of clamp 3, the left side fixedly connected with equipment board 5 of clamp 3, the screw hole 6 that is linked together with the back is seted up in the front of equipment board 5, the quantity of equipment board 5 and screw hole 6 is two, threaded connection has screw rod 8 between two screw holes 6.

The working principle is as follows: when there is more dust on pin 2 surface, reciprocate clamp 3 for clamp 3 drives brush hair 4 and cleans pin 2's surface dust, after clean the completion, can twist out screw rod 8 from the inside of screw hole 6, makes two sets of clamps 3 split each other, thereby demolishs on pin 2's surface, cleans brush hair 4 inside dust.

Claims

1. A power transistor of MOS structure, includes body (1), its characterized in that: the bottom fixedly connected with pin (2) of body (1), clamp (3) have been cup jointed on the surface of pin (2), the inner wall fixedly connected with brush hair (4) of clamp (3), the left side fixedly connected with equipment board (5) of clamp (3), screw hole (6) that are linked together with the back are seted up in the front of equipment board (5).

2. The power transistor of a MOS structure of claim 1, wherein: the number of the hoops (3) is three, and the three hoops (3) are fixedly connected through connecting rods (7).

3. The power transistor of a MOS structure of claim 1, wherein: the clamp (3) has two sets altogether, and the overlap joint forms the annular between two sets of clamp (3).

4. The power transistor of a MOS structure of claim 1, wherein: the number of the assembling plates (5) and the number of the threaded holes (6) are two, and a screw rod (8) is connected between the two threaded holes (6) in a threaded manner.