CN104682674A - Circuit for increasing PWM (pulse-width modulation) pulse driving capability - Google Patents
Circuit for increasing PWM (pulse-width modulation) pulse driving capability Download PDFInfo
- Publication number
- CN104682674A CN104682674A CN201310629947.4A CN201310629947A CN104682674A CN 104682674 A CN104682674 A CN 104682674A CN 201310629947 A CN201310629947 A CN 201310629947A CN 104682674 A CN104682674 A CN 104682674A
- Authority
- CN
- China
- Prior art keywords
- triode
- electrode
- npn triode
- pulse driving
- pnp triode
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Classifications
-
- H—ELECTRICITY
- H02—GENERATION; CONVERSION OR DISTRIBUTION OF ELECTRIC POWER
- H02M—APPARATUS FOR CONVERSION BETWEEN AC AND AC, BETWEEN AC AND DC, OR BETWEEN DC AND DC, AND FOR USE WITH MAINS OR SIMILAR POWER SUPPLY SYSTEMS; CONVERSION OF DC OR AC INPUT POWER INTO SURGE OUTPUT POWER; CONTROL OR REGULATION THEREOF
- H02M1/00—Details of apparatus for conversion
- H02M1/08—Circuits specially adapted for the generation of control voltages for semiconductor devices incorporated in static converters
Abstract
The invention provides a circuit for increasing the PWM (pulse-width modulation) pulse driving capability. The circuit comprises a PNP triode Q3 and an NPN triode Q2, wherein the PNP triode Q3 and the NPN triode Q2 are connected with the output end of a PWM pulse driving chip, a base electrode of the PNP triode Q3 and a base electrode of the NPN triode Q2 are connected with the output end of a PWM pulse driving chip, an emitting electrode of the PNP triode Q3 and an emitting electrode of the NPN triode Q2 are connected and are connected to a grid electrode of an MOS (metal oxide semiconductor) tube Q1, a collecting electrode of the PNP triode Q3 is grounded, the collecting electrode of the NPN triode Q2 are connected with VCC, a source electrode of the MOS tube Q1 is grounded, a drain electrode is connected with a primary winding of a transformer, one end of a secondary winding of the transformer is connected with an anode of a diode D1, the other end of the secondary winding of the transformer is grounded through a capacitor C1, and a cathode of the diode D1 is grounded. The circuit has the advantages that a push-pull triode mode is adopted, the driving capability of the PWM signals is increased, the opening and closing speed of the MOS tube is accelerated, and the efficiency is improved.
Description
Technical field
The invention belongs to PWM control technology field, particularly a kind of circuit increasing pwm pulse driving force.
Background technology
PWM (pulse width modulation) simply says it is one of a kind of converter technique, by changing pulse duration to control output voltage, its output frequency is controlled by the change cycle, range of application is very wide, but the PWM drive singal in current driving chip is directly connected on metal-oxide-semiconductor, when causing the metal-oxide-semiconductor driving gs parasitic capacitance larger at drive singal, cause Vgs drive waveforms edge to slow down, power-efficient is lower.
Summary of the invention
In order to overcome the shortcoming of above-mentioned prior art, the object of the present invention is to provide a kind of circuit increasing pwm pulse driving force, use PNP and NPN to pipe, through-current capability when triode is opened is higher than driving chip, larger metal-oxide-semiconductor can be driven, use for high-power state.
To achieve these goals, the technical solution used in the present invention is:
A kind of circuit increasing pwm pulse driving force, comprise the PNP triode Q3 and NPN triode Q2 that connect pwm pulse driving chip output, the base stage of PNP triode Q3 and the base stage of NPN triode Q2 connect pwm pulse driving chip output, the emitter-base bandgap grading of PNP triode Q3 and the emitter-base bandgap grading of NPN triode Q2 connect and are connected to the grid of metal-oxide-semiconductor Q1, the grounded collector of PNP triode Q3, the collector electrode of NPN triode Q2 meets VCC, the source ground of metal-oxide-semiconductor Q1, drain electrode connects a winding of transformer, the anode of the secondary winding one terminating diode D1 of transformer, the other end is by electric capacity C1 ground connection, the minus earth of diode D1.
Compared with prior art, the present invention adopts the mode of recommending triode, and add the driving force of pwm signal, what improve metal-oxide-semiconductor opens closing velocity, improves efficiency.
Accompanying drawing explanation
Fig. 1 is structural representation of the present invention.
Embodiment
Embodiments of the present invention are described in detail below in conjunction with drawings and Examples.
As shown in Figure 1, a kind of circuit increasing pwm pulse driving force, comprise the PNP triode Q3 and NPN triode Q2 that connect pwm pulse driving chip output, the base stage of PNP triode Q3 and the base stage of NPN triode Q2 connect pwm pulse driving chip output, the emitter-base bandgap grading of PNP triode Q3 and the emitter-base bandgap grading of NPN triode Q2 connect and are connected to the grid of metal-oxide-semiconductor Q1, the grounded collector of PNP triode Q3, the collector electrode of NPN triode Q2 meets VCC, the source ground of metal-oxide-semiconductor Q1, drain electrode connects a winding of transformer, the anode of the secondary winding one terminating diode D1 of transformer, the other end is by electric capacity C1 ground connection, the minus earth of diode D1.
In this programme when pwm pulse is high, Q2 conducting, electric current drives the grid of Q1 quickly through Q2, metal-oxide-semiconductor conducting, transformer charging process;
When pwm pulse is low, Q3 fast conducting, Q1 grid is quickly through the electric discharge of Q3 loop, and Q1 ends, the now secondary afterflow of T1, ensures that Vout's is stable.
Q2 the transient current of Q3 more much larger than original drive circuit, big current can be used to rush discharge of electricity, namely add driving force.
Claims (1)
1. one kind increases the circuit of pwm pulse driving force, it is characterized in that, comprise the PNP triode Q3 and NPN triode Q2 that connect pwm pulse driving chip output, the base stage of PNP triode Q3 and the base stage of NPN triode Q2 connect pwm pulse driving chip output, the emitter-base bandgap grading of PNP triode Q3 and the emitter-base bandgap grading of NPN triode Q2 connect and are connected to the grid of metal-oxide-semiconductor Q1, the grounded collector of PNP triode Q3, the collector electrode of NPN triode Q2 meets VCC, the source ground of metal-oxide-semiconductor Q1, drain electrode connects a winding of transformer, the anode of the secondary winding one terminating diode D1 of transformer, the other end is by electric capacity C1 ground connection, the minus earth of diode D1.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201310629947.4A CN104682674A (en) | 2013-11-28 | 2013-11-28 | Circuit for increasing PWM (pulse-width modulation) pulse driving capability |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201310629947.4A CN104682674A (en) | 2013-11-28 | 2013-11-28 | Circuit for increasing PWM (pulse-width modulation) pulse driving capability |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN104682674A true CN104682674A (en) | 2015-06-03 |
Family
ID=53317376
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201310629947.4A Pending CN104682674A (en) | 2013-11-28 | 2013-11-28 | Circuit for increasing PWM (pulse-width modulation) pulse driving capability |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN104682674A (en) |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN107728691A (en) * | 2017-08-28 | 2018-02-23 | 广东明丰电源电器实业有限公司 | A kind of circuit for strengthening driving force |
| CN111464158A (en) * | 2020-03-30 | 2020-07-28 | 中煤科工集团重庆研究院有限公司 | MOS tube pulse driving circuit |
-
2013
- 2013-11-28 CN CN201310629947.4A patent/CN104682674A/en active Pending
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN107728691A (en) * | 2017-08-28 | 2018-02-23 | 广东明丰电源电器实业有限公司 | A kind of circuit for strengthening driving force |
| CN111464158A (en) * | 2020-03-30 | 2020-07-28 | 中煤科工集团重庆研究院有限公司 | MOS tube pulse driving circuit |
| CN111464158B (en) * | 2020-03-30 | 2023-07-18 | 中煤科工集团重庆研究院有限公司 | MOS tube pulse driving circuit |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| CN103199677B (en) | Single channel isolated form MOSFET drive circuit | |
| CN103138541B (en) | Drive transformer isolation self-adaptation drive circuit | |
| CN101895281B (en) | Novel MOS tube drive circuit for switch power supply | |
| CN101630911B (en) | DC/DC converter and pre-bias switching circuit thereof | |
| CN101753000A (en) | Power MOS pipe grid drive circuit and method for grid floating and level switching | |
| CN201733500U (en) | Primary-side constant-current control device of isolation-type flyback LED driver | |
| CN103825436B (en) | A kind of power field effect tube drive circuit of high speed big current | |
| CN102594101A (en) | Isolated rapid turn-off metal oxide field effect transistor (MOFET) driving circuit | |
| CN202524281U (en) | Isolated rapid turn-off oxide field effect transistor (MOFET) driving circuit | |
| CN105048790A (en) | Power tube control system and drive circuit for driving external power tube | |
| CN201854184U (en) | Buck circuit | |
| CN102969915A (en) | High-power-factor constant current control circuit | |
| CN202513892U (en) | High power MOS (Metal Oxide Semiconductor) field-effect transistor driving circuit | |
| CN107070206B (en) | A kind of quasi-resonant switching converter based on valley detection | |
| CN203504407U (en) | Igbt drive circuit and electric pressure cooker | |
| CN203326865U (en) | Synchronous rectifier tube drive unit | |
| CN101599699A (en) | Switching power circuit | |
| CN104393755A (en) | High-efficiency booster circuit | |
| CN104682674A (en) | Circuit for increasing PWM (pulse-width modulation) pulse driving capability | |
| CN102868284B (en) | IGBT (Insulated Gate Bipolar Transistor) drive circuit | |
| CN102739211A (en) | Insulated gate bipolar transistor (IGBT) driving push-pull circuit | |
| CN206650647U (en) | A kind of High Power IGBT Driver Circuit | |
| CN204669210U (en) | A kind of pulse driving circuit of electrical arc spraying power source | |
| CN201533253U (en) | MOS tube drive circuit of high-frequency charger | |
| CN202121561U (en) | Novel MOS transistor drive circuit for switching power supply |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| C06 | Publication | ||
| PB01 | Publication | ||
| WD01 | Invention patent application deemed withdrawn after publication |
Application publication date: 20150603 |