CN217562559U - Shock-resistant schottky diode - Google Patents

Shock-resistant schottky diode Download PDF

Info

Publication number
CN217562559U
CN217562559U CN202220648239.XU CN202220648239U CN217562559U CN 217562559 U CN217562559 U CN 217562559U CN 202220648239 U CN202220648239 U CN 202220648239U CN 217562559 U CN217562559 U CN 217562559U
Authority
CN
China
Prior art keywords
schottky diode
conductive adhesive
leg
conducting plate
current conducting
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Active
Application number
CN202220648239.XU
Other languages
Chinese (zh)
Inventor
刘建军
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Dongguan Jiajun Science & Technology Co ltd
Original Assignee
Dongguan Jiajun Science & Technology Co ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Dongguan Jiajun Science & Technology Co ltd filed Critical Dongguan Jiajun Science & Technology Co ltd
Priority to CN202220648239.XU priority Critical patent/CN217562559U/en
Application granted granted Critical
Publication of CN217562559U publication Critical patent/CN217562559U/en
Active legal-status Critical Current
Anticipated expiration legal-status Critical

Links

Images

Classifications

    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/34Strap connectors, e.g. copper straps for grounding power devices; Manufacturing methods related thereto
    • H01L2224/39Structure, shape, material or disposition of the strap connectors after the connecting process
    • H01L2224/40Structure, shape, material or disposition of the strap connectors after the connecting process of an individual strap connector
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/15Details of package parts other than the semiconductor or other solid state devices to be connected
    • H01L2924/181Encapsulation

Landscapes

  • Electrodes Of Semiconductors (AREA)

Abstract

The utility model provides an antidetonation schottky diode, including the insulating plastic-sealed body, the internal schottky chip that is equipped with of insulating plastic-sealed, both ends are connected with first current conducting plate, second current conducting plate respectively about the schottky chip, first current conducting plate include with the last electrically conductive part of connecting of schottky chip, connection are in the kink of electrically conductive part one end, connection are in the contact site of kink lower extreme, the lower pot head of contact site has first conductive adhesive, first conductive adhesive lower extreme is fixed with first leg, second current conducting plate one end downside covers there is the second conductive adhesive, the second conductive adhesive lower extreme is fixed with the second leg. The utility model discloses a schottky diode designs into dismantled and assembled structure with first leg, second welding, has adopted thicker first conducting resin, second conducting resin moreover, can promote schottky diode's shock resistance.

Description

Shock-resistant schottky diode
Technical Field
The utility model relates to a diode technical field, concretely relates to shock-resistant schottky diode.
Background
A schottky diode is a diode in which a barrier is formed at an interface by a metal and an N-type semiconductor contact. The schottky diode of prior art, it is direct with leg and chip integration plastic envelope shaping usually to with leg lug beading on the circuit board, in leg welding process, if the condition such as damage appears in the leg lug, the leg lug can't be changed, lead to whole schottky diode to scrap. And the mode of direct welding, the shock resistance of schottky diode is not enough.
SUMMERY OF THE UTILITY MODEL
To above problem, the utility model provides an antidetonation schottky diode designs into dismantled and assembled structure with first leg, second welding, has adopted thicker first conducting resin, second conducting resin moreover, can promote schottky diode's shock resistance.
In order to achieve the above object, the present invention provides the following technical solutions:
the utility model provides an antidetonation schottky diode, includes the insulating plastic-sealed body, be equipped with the schottky chip in the insulating plastic-sealed body, schottky chip upper and lower both ends are connected with first current conducting plate, second current conducting plate respectively, first current conducting plate include with the last end connection of schottky chip conductive part, connection be in the kink of conductive part one end, connection be in the contact site of kink lower extreme, the contact site lower extreme covers there is first conductive adhesive, first conductive adhesive lower extreme is fixed with first leg, second current conducting plate one end downside covers there is the second conductive adhesive, the second conductive adhesive lower extreme is fixed with the second leg.
Specifically, the thickness of the first conductive adhesive and the second conductive adhesive is m, and m is larger than or equal to 3mm.
Specifically, the first conductive adhesive is fixedly connected with the first welding leg through a first screw.
Specifically, the second conductive adhesive is fixedly connected with the second solder leg through a second screw.
Specifically, a plurality of radiating fins are further arranged at the upper end of the inner side of the insulating plastic package body.
Specifically, a waterproof film is covered on the outer side of the insulating plastic package body.
The beneficial effects of the utility model are that:
the utility model discloses a schottky diode designs into dismantled and assembled structure with first leg, second welding, has adopted thicker first conducting resin, second conducting resin moreover, and first conducting resin, second conducting resin have good elasticity as middle electric conductor, can promote schottky diode's shock resistance.
Drawings
Fig. 1 is the utility model discloses a shock-resistant schottky diode's schematic structure diagram.
The reference signs are: the device comprises an insulating plastic package body 1, a Schottky chip 2, a first conductive plate 3, a conductive part 31, a bending part 32, a contact part 33, a second conductive plate 4, a first conductive adhesive 5, a first welding foot 6, a second conductive adhesive 7, a second welding foot 8, a first screw 9, a second screw 10, a radiating fin 11 and a waterproof film 12.
Detailed Description
The present invention will be described in further detail with reference to the following examples and drawings, but the present invention is not limited thereto.
As shown in fig. 1:
the utility model provides an antidetonation schottky diode, including the insulating plastic-sealed body 1, be equipped with schottky chip 2 in the insulating plastic-sealed body 1, both ends are connected with first current conducting plate 3 respectively about schottky chip 2, second current conducting plate 4, first current conducting plate 3 includes the conductive part 31 of being connected with schottky chip 2 upper end, connect the kink 32 in conductive part 31 one end, connect the contact site 33 at kink 32 lower extreme, the lower cover of contact site 33 has first conducting resin 5, first conducting resin 5 lower extreme is fixed with first leg 6, first conducting resin 5 is as the middle electric conductor between first current conducting plate 3 and the first leg 6, second current conducting plate 4 one end downside covers there is second conducting resin 7, second conducting resin 7 lower extreme is fixed with second leg 8, second conducting resin 7 is as the middle electric conductor between second current conducting plate 4 and the second leg 8, the thickness more than or equal to 3mm of first conducting resin 5 and second conducting resin 7, through increaseing first conducting resin 5, the thickness of second conducting resin 7, promote first conducting resin, the elasticity effect of second conducting resin, thereby promote the diode after-welding ability.
Preferably, the first conductive paste 5 and the first solder tail 6 are fixedly connected by a first screw 9.
Preferably, the second conductive paste 7 and the second solder tail 8 are fixedly connected by a second screw 10.
Preferably, in order to improve the heat dissipation performance of the schottky diode, a plurality of heat dissipation fins 11 are further disposed at the upper end of the inner side of the insulating plastic package body 1.
Preferably, in order to improve the waterproof performance of the insulating plastic package 1, the insulating plastic package 1 is covered with a waterproof film 12 on the outside.
The above embodiments only express 1 implementation manner of the present invention, and the description thereof is more specific and detailed, but not to be understood as the limitation of the scope of the present invention. It should be noted that, for those skilled in the art, without departing from the spirit of the present invention, several variations and modifications can be made, which are within the scope of the present invention. Therefore, the protection scope of the present invention should be subject to the appended claims.

Claims (6)

1. The utility model provides an antidetonation schottky diode, its characterized in that, includes the insulating plastic-sealed body (1), be equipped with schottky chip (2) in the insulating plastic-sealed body (1), both ends are connected with first current conducting plate (3), second current conducting plate (4) respectively about schottky chip (2), first current conducting plate (3) include with conductive part (31) of schottky chip (2) upper end connection, connect kink (32), the connection of conductive part (31) one end are in contact site (33) of kink (32) lower extreme, the lower pot head of contact site (33) has first conductive adhesive (5), first conductive adhesive (5) lower extreme is fixed with first leg (6), second current conducting plate (4) one end downside covers there is second conductive adhesive (7), second conductive adhesive (7) lower extreme is fixed with second leg (8).
2. An earthquake-resistant schottky diode according to claim 1, wherein the thickness of the first conductive adhesive (5) and the second conductive adhesive (7) is m, and m is greater than or equal to 3mm.
3. An earthquake-resistant schottky diode as claimed in claim 1, characterized in that the first electrically conductive glue (5) is fixedly connected to the first leg (6) by means of a first screw (9).
4. An earthquake-resistant schottky diode according to claim 1, characterized in that the second conductive paste (7) is fixedly connected to the second leg (8) by means of a second screw (10).
5. An earthquake-resistant schottky diode as claimed in claim 1, characterized in that the insulating plastic package (1) is further provided with a plurality of heat sinks (11) at the upper inner side.
6. An earthquake-resistant schottky diode as claimed in claim 1, characterized in that the insulating plastic package (1) is covered on the outside with a waterproof film (12).
CN202220648239.XU 2022-03-23 2022-03-23 Shock-resistant schottky diode Active CN217562559U (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
CN202220648239.XU CN217562559U (en) 2022-03-23 2022-03-23 Shock-resistant schottky diode

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
CN202220648239.XU CN217562559U (en) 2022-03-23 2022-03-23 Shock-resistant schottky diode

Publications (1)

Publication Number Publication Date
CN217562559U true CN217562559U (en) 2022-10-11

Family

ID=83471510

Family Applications (1)

Application Number Title Priority Date Filing Date
CN202220648239.XU Active CN217562559U (en) 2022-03-23 2022-03-23 Shock-resistant schottky diode

Country Status (1)

Country Link
CN (1) CN217562559U (en)

Similar Documents

Publication Publication Date Title
US20080061314A1 (en) Light emitting device with high heat-dissipating capability
US9230891B2 (en) Semiconductor device
EP3104412A1 (en) Power semiconductor module
US20240203841A1 (en) Novel packaging structure of power semiconductor module
CN216288418U (en) Improved shaft type diode, bypass module using same and photovoltaic module junction box
CN102983114A (en) High performance power transistor having ultra-thin package
CN113517244A (en) Novel packaging structure of power semiconductor module
CN102064160A (en) Power module containing special power terminal
CN217562559U (en) Shock-resistant schottky diode
CN201927602U (en) Power module comprising special power terminal
CN219435850U (en) MOSFET chip packaging structure
CN218039169U (en) Packaging structure of diode photovoltaic module and solar battery junction box device
CN113192938B (en) Large-current non-polar Schottky diode
US20190393136A1 (en) Power device for rectifier
CN112635404B (en) Power sub-module, manufacturing method thereof and rotary die press-connection type power module
CN110473849B (en) SMD diode of firm type of heat conduction
CN210778570U (en) Power semiconductor module, motor assembly and electric vehicle
CN212485335U (en) Light and thin patch type triode
CN208538827U (en) Power device with heat sinking function
CN214542214U (en) High-power Schottky rectifier tube
CN215578525U (en) Novel packaging structure of power semiconductor module
CN211719599U (en) Ultra-thin diode with firm structure
CN215731676U (en) Ultra-thin type paster diode
CN216749898U (en) Packaging structure of power semiconductor
CN210467821U (en) SMD diode with stable structure

Legal Events

Date Code Title Description
GR01 Patent grant
GR01 Patent grant