CN217522369U - Laser device - Google Patents

Abstract

The application discloses laser belongs to the technical field of photoelectricity. Each light emitting chip in the laser corresponds to one reflecting prism, and the reflecting prism is positioned on the light emitting side of the corresponding light emitting chip; the plurality of light-emitting chips comprise a plurality of first type light-emitting chips and a plurality of second type light-emitting chips, and the colors of the laser light emitted by different types of chips are different; the first type of light-emitting chips and the second type of light-emitting chips are alternately arranged in the first direction and staggered with each other; the reflecting prisms corresponding to the first type of light-emitting chips and the reflecting prisms corresponding to the second type of light-emitting chips are positioned in the same row in the first direction and positioned between the first type of light-emitting chips and the second type of light-emitting chips in the second direction, and the second direction is vertical to the first direction; a switching table is arranged between two adjacent similar light-emitting chips with different types of light-emitting chips at intervals in the first direction, and the two adjacent similar light-emitting chips are electrically connected through the switching table. The application solves the problem that the size of the laser is large. The application is used for light emission.

Description

Laser device

Technical Field

The application relates to the field of photoelectric technology, in particular to a laser.

Background

With the development of the optoelectronic technology, lasers are widely used, and multi-color lasers (such as three-color lasers) are favored because of their strong color rendering properties.

Fig. 1 is a schematic structural diagram of a laser provided in the related art. As shown in fig. 1, the laser 00 includes: a bottom plate 001, a tubular sidewall 002, a plurality of conductive leads 003, and a plurality of light emitting chips 004. The side walls 002 and the light emitting chips 004 are fixed on the bottom plate 001, and the side walls 002 surround the plurality of light emitting chips 004. The plurality of light emitting chips 004 are arranged in a plurality of rows, and the light emitting chips 004 in the same row are for emitting laser light of the same color. The conductive pins 003 are fixed to opposite sides of the sidewall 002, and the conductive pin 003 on one side is a positive electrode pin and the conductive pin 003 on the other side is a negative electrode pin. As shown in fig. 1, the plurality of light-emitting chips 004 may be arranged in four rows, a first row of light-emitting chips 004 for emitting green laser light, a second row of light-emitting chips 004 for emitting blue laser light, and third and fourth rows of light-emitting chips 004 for emitting red laser light. Four conductive pins 003 are fixed to two opposite sides of the side wall, and each row of light-emitting chips 004 are connected in series through a wire, and two ends of each row of light-emitting chips are connected with an anode pin and a cathode pin respectively.

However, the size of the multicolor laser in the related art is large, and miniaturization is difficult.

SUMMERY OF THE UTILITY MODEL

The application provides a laser, can solve the great problem of volume of polychrome laser. The laser includes: the LED lamp comprises a base plate, a tubular side wall, a plurality of light-emitting chips, a plurality of reflecting prisms and a plurality of adapter stations, wherein the tubular side wall is positioned on the base plate; each light-emitting chip corresponds to one reflecting prism, and the reflecting prism is positioned at the light-emitting side of the corresponding light-emitting chip;

the plurality of light-emitting chips comprise a plurality of first-type light-emitting chips and a plurality of second-type light-emitting chips, and the colors of the laser light emitted by different types of chips are different; the first type of light-emitting chips and the second type of light-emitting chips are alternately arranged in a first direction and staggered with each other;

the reflecting prisms corresponding to the first type of light-emitting chips and the reflecting prisms corresponding to the second type of light-emitting chips are positioned in the same row in the first direction, and are positioned between the first type of light-emitting chips and the second type of light-emitting chips in the second direction, and the second direction is vertical to the first direction;

the switching table is arranged between two adjacent similar light-emitting chips which are spaced with different types of light-emitting chips in the first direction, and the two adjacent similar light-emitting chips are electrically connected through the switching table.

The beneficial effect that technical scheme that this application provided brought includes at least:

in the laser provided by the application, the first type of light-emitting chips and the second type of light-emitting chips can be alternately arranged in the first direction and staggered with each other, and the corresponding reflecting prisms can be positioned in the same row between the first type of light-emitting chips and the second type of light-emitting chips. Therefore, the first type light-emitting chip, the second type light-emitting chip and the corresponding reflecting prisms can occupy less positions, and the miniaturization of the laser is facilitated. The first type of light-emitting chips and the second type of light-emitting chips are arranged alternately, so that the distribution uniformity of laser light of different colors emitted by the laser can be improved.

And at least one switching table is arranged between two adjacent similar light-emitting chips with different light-emitting chips at intervals, and the two similar light-emitting chips can be electrically connected through the at least one switching table. Therefore, the electric connection of each first type of light-emitting chip and the electric connection of each second type of light-emitting chip can be realized, and the normal light emission of the first type of light-emitting chips and the second type of light-emitting chips is ensured.

Drawings

In order to more clearly illustrate the technical solutions in the embodiments of the present application, the drawings needed to be used in the description of the embodiments are briefly introduced below, and it is obvious that the drawings in the following description are only some embodiments of the present application, and it is obvious for those skilled in the art to obtain other drawings based on these drawings without creative efforts.

Fig. 1 is a schematic structural diagram of a laser provided in the related art;

fig. 2 is a schematic structural diagram of a laser provided in an embodiment of the present application;

FIG. 3 is a schematic diagram of another laser structure provided in an embodiment of the present application;

fig. 4 is a schematic structural diagram of another laser provided in an embodiment of the present application;

FIG. 5 is a schematic structural diagram of another laser provided in an embodiment of the present application;

fig. 6 is a schematic structural diagram of a laser according to another embodiment of the present application;

fig. 7 is a schematic structural diagram of an adapter station according to an embodiment of the present disclosure;

fig. 8 is a schematic structural diagram of another transfer station provided in an embodiment of the present application;

FIG. 9 is a schematic diagram of another laser structure provided in another embodiment of the present application;

FIG. 10 is a schematic diagram of another laser according to another embodiment of the present application;

fig. 11 is a schematic structural diagram of another laser provided in another embodiment of the present application.

Detailed Description

To make the objects, technical solutions and advantages of the present application more clear, the following detailed description of the embodiments of the present application will be made with reference to the accompanying drawings.

With the development of the optoelectronic technology, the application of the laser is more and more extensive, for example, the laser can be used as a light source of a laser projection device or a laser television. Because of their good color rendering and high color gamut, multi-color lasers are becoming increasingly favored in the display field. At present, requirements for miniaturization, reliability and the like of a multicolor laser are also higher and higher. The embodiment of the application provides a multicolor laser, which can improve the miniaturization of the laser.

Fig. 2 is a schematic structural diagram of a laser provided in an embodiment of the present application, fig. 3 is a schematic structural diagram of another laser provided in an embodiment of the present application, and fig. 3 is a schematic structural diagram of another laser provided in an embodiment of the present application. Wherein fig. 2 may be a top view of fig. 3 and 4, fig. 3 may be a schematic view of a section a-a 'in the laser shown in fig. 2, and fig. 4 may be a schematic view of a section b-b' in the laser shown in fig. 2. As shown in fig. 2-4, the laser 10 may include a base plate 101, a tubular sidewall 102, a plurality of light emitting chips 103, a plurality of relay stages 104, and a plurality of reflective prisms 106. The sidewall 102, the plurality of light emitting chips and the plurality of transfer stages 104 are all located on the bottom plate 101, and the sidewall 102 surrounds the plurality of light emitting chips 103, the plurality of transfer stages 104 and the plurality of reflection prisms 106. Each light emitting chip 103 may correspond to one reflection prism 106, and each reflection prism 106 is located at the light emitting side of the corresponding light emitting chip 103.

The laser 10 in the present embodiment is a multi-color laser. The plurality of light emitting chips 103 in the laser 10 may include a plurality of types of light emitting chips 103, each type of light emitting chip 103 may emit laser light of one color, and the colors of the laser light emitted by different types of light emitting chips 103 are different. The number of each type of light emitting chip 103 may be plural. Illustratively, the plurality of light emitting chips 103 includes a plurality of first type light emitting chips 103a and a plurality of second type light emitting chips 103 b. The first type of light emitting chip 103a and the second type of light emitting chip 103b are also two types of light emitting chips 103 in the plurality of types of light emitting chips 103, and the first type of light emitting chip 103a and the second type of light emitting chip 103b are used for emitting laser light of different colors, respectively. For example, the first type of light emitting chip 103a is used to emit laser light of a first color, and the second type of light emitting chip 103b is used to emit laser light of a second color. The first color may be green and the second color may be blue. Alternatively, the first color is blue and the second color is green. Alternatively, the first color and the second color may be different from green and blue, e.g., the first color or the second color may be red, yellow, orange, etc.

In the embodiment of the present application, the first type light emitting chips 103a and the second type light emitting chips 103b may be alternately arranged in a first direction (e.g., x direction in fig. 2 and 4), and may be staggered from each other in the first direction. The first and second types of light emitting chips 103a and 103b are also offset from each other in a second direction (e.g., the y-direction in fig. 2 and 3) that is perpendicular to the first direction. For example, the second type of light emitting chip 103b in the laser 10 may be located at one side of the first type of light emitting chip 103a in the second direction to ensure that the two types of light emitting chips are staggered from each other in the second direction. As in fig. 2, the plurality of second type light emitting chips 103b are positioned under the plurality of first type light emitting chips 103 a.

In the embodiment of the present application, the arrangement heights of the light emitting chips 103 may be equal or substantially equal, and it can be considered that the arrangement surfaces of the light emitting chips 103 may belong to the same reference surface, and the reference surface is parallel to the bottom plate 101. It should be noted that the reference plane is a plane assumed for convenience of explaining the positional relationship of the light emitting chip 103 in the embodiment of the present application, and does not actually exist in the laser 10. It should be noted that, the two objects being offset from each other in the first direction on a certain plane means that the two objects are not aligned in the direction, and the orthographic projections of the two objects on the plane perpendicular to the first direction are not coincident. If the centers of the two objects are not aligned in the first direction, that is, the connecting line of the centers of the two objects is not parallel to the first direction, or the edges of the two objects on the same side are not aligned in the first direction; there may be a partial overlap, or no overlap, of the orthographic projections of the two objects on a plane perpendicular to the first direction. In this embodiment, the plurality of first type light emitting chips 103a may be located in the same row, the plurality of second type light emitting chips 103b may be located in the same row, and an orthogonal projection of the row of first type light emitting chips 103a and an orthogonal projection of the row of second type light emitting chips 103b on a plane perpendicular to the first direction do not overlap, and a certain gap exists therebetween.

Alternatively, in the first direction, the first type light emitting chips 103a and the second type light emitting chips 103b may be alternately arranged one by one, two by two, or in other manners. The alternating arrangement of the two objects in a certain direction means that: another object is arranged between every two same-kind objects in the direction, for example, the objects a and b are alternately arranged one by one in an arrangement mode of "ababab. Two objects are alternately arranged in pairs in a certain direction, which means that: the number of the different objects between two same-kind objects spaced with different objects in the direction is 2, for example, the objects a and b may be arranged in a manner of "aabbab. Alternatively, the number of the first-type light-emitting chips 103a and the second-type light-emitting chips 103b alternating in the first direction is set randomly, and for example, the two types of light-emitting chips may be arranged according to "ababab", "abababa" or other manners, and the specific alternating manner of the first-type light-emitting chips 103a and the second-type light-emitting chips 103b in the first direction in the embodiment of the present application is not limited. As shown in fig. 2, in the embodiment of the present application, two first-type light emitting chips 103a are spaced between every two adjacent second-type light emitting chips 103b in the first direction. In the embodiments of the present application, an object located between two other objects in a certain direction means that all structures of the object are located in a space between two faces of the two other objects that are nearest to each other in the certain direction.

In the embodiment of the present application, the light emitting directions of the first type of light emitting chips 103a and the second type of light emitting chips 103b may be opposite, where each type of light emitting chips may emit laser light to the side where another type of light emitting chips are located. For example, the light emitting direction of the first type of light emitting chip 103a is opposite to the second direction (e.g., y direction in fig. 2), and the light emitting direction of the second type of light emitting chip 103b is the y direction. Since the reflection prism 106 corresponding to each light emitting chip 103 is located on the light emitting side of the light emitting chip 103, the reflection prisms 106 corresponding to the first type of light emitting chips 103a and the reflection prisms 106 corresponding to the second type of light emitting chips 103b in the laser 10 are located between the first type of light emitting chips 103a and the second type of light emitting chips 103b in the second direction. The reflecting prisms 106 corresponding to the first type of light emitting chips 103a and the reflecting prisms 106 corresponding to the second type of light emitting chips 103b may also be located in the same row. Therefore, the space occupied by the reflecting prisms 106 corresponding to the first light-emitting chip 103a and the second light-emitting chip 103b can be ensured to be less, which is beneficial to the miniaturization of the laser 10.

In the embodiment of the present application, each light emitting chip 103 may emit laser light to the corresponding reflection prism 106, and the reflection prism 106 may reflect the laser light emitted by the corresponding light emitting chip 103 in a direction away from the base plate 101 (e.g., a z direction in fig. 3). The distribution position of each color laser light emitted from the laser 10 is determined by the position of the reflection prism 106. In the embodiment of the present application, the first type light emitting chips 103a and the second type light emitting chips 103b are alternately arranged in the first direction, and the corresponding reflective prisms 106 are arranged in a row, so that after the laser light emitted by the first type light emitting chips 103a and the second type light emitting chips 103b is reflected by the corresponding reflective prisms 106, the emitted laser light with different colors can be alternately arranged in the first direction, and the laser light is arranged in a row in the first direction, so that the distribution uniformity of the laser light emitted by the laser device with different colors can be ensured.

Each type of light emitting chip in the embodiment of the present application may be connected in series, for example, the plurality of first type light emitting chips 103a are connected in series, and the plurality of second type light emitting chips 103b are connected in series, so that each type of light emitting chip receives a uniform current, and each light emitting chip emits a laser light of a corresponding color under the action of the received current. If other similar light-emitting chips are not spaced between two similar light-emitting chips adjacent to each other in the first direction, the two similar light-emitting chips can be directly connected through a wire. If other light-emitting chips are spaced between two similar light-emitting chips adjacent to each other in the first direction, the wire between the two similar light-emitting chips can be connected through the connection stage 104. The two components described in the embodiments of the present application are all referred to as being electrically connected.

In the embodiment of the present application, in the plurality of first-type light emitting chips 103a and the plurality of second-type light emitting chips 103b in the laser 10, a distance between two adjacent similar light emitting chips having different types of light emitting chips at intervals in the first direction is relatively long, and at least one switching stage 104 may exist between the two similar light emitting chips, so that the two similar light emitting chips are electrically connected through the at least one switching stage 104. Illustratively, in the first direction, there may be at least one second type light emitting chip 103b spaced between two adjacent first type light emitting chips 103 a. In this case, the distance between the two adjacent first light emitting chips 103a is relatively long, and a connection pad 104 may be disposed between the two first light emitting chips 103a for connecting wires to the two first light emitting chips 103 a. Optionally, in the first direction, there may be at least one first-type light emitting chip 103a spaced between two adjacent second-type light emitting chips 103 b. In this case, the two adjacent second light emitting chips 103b are far apart from each other, and a connection pad 104 may be disposed between the two second light emitting chips 103b for connecting wires to the two second light emitting chips 103 b.

Illustratively, as shown in fig. 2, in the x direction, a second light emitting chip 103b is spaced between a second first light emitting chip 103a and a third first light emitting chip 103a from left to right, and a transfer stage 104 is disposed between the two first light emitting chips 103 a. The two first-type light emitting chips 103a are connected by a wire transferred by the transfer stage 104. The relay stage 104 may be arranged in a row with each of the first type light emitting chips 103 a. The first two first light emitting chips 103a are directly connected by a wire, and the second two first light emitting chips 103a are also directly connected by a wire, so that all the first light emitting chips 103a in the laser 10 are connected in series.

Further illustratively, as shown in fig. 2, two first-type light emitting chips 103a are spaced between every two adjacent second-type light emitting chips 103b in the x-direction. Two switching stages 104 exist between every two adjacent second-type light-emitting chips 103 b. The relay station 104 is aligned with each of the second type light emitting chips 103 b. Every two adjacent second-type light-emitting chips 103b are connected by the wires transferred by the two transfer stages 104 therebetween, so that all the second-type light-emitting chips 103b in the laser 10 are realized.

Optionally, the wire in the embodiment of the present application may be a gold wire, and may be bonded to the substrate by a gold wire bonding processA gold wire is arranged between the two objects to connect the two objects. The wire has a maximum fusing current, and when the current passing through the wire exceeds the maximum fusing current, the wire will fuse, resulting in short circuit or open circuit. Fusing current I corresponding to the conductor

Where ρ represents the resistivity, D represents the wire diameter of the wire, l represents the wire length, and k represents the thermal conductivity of the wire. The thermal conductivity K of the wire as in the present embodiment may be equal to 310W/m.degree (i.e., W/(m.k), where K refers to degrees kelvin and may be replaced by degrees celsius). From this relationship, the maximum fusing current of the conductive wire is related to the wire diameter and length of the gold wire. In the case where the material and the wire diameter of the wire are fixed, the longer the wire is, the more likely the wire is to be fused when a current flows therethrough. In the embodiment of the application, when conducting wire bonding between the light-emitting chips, the switching platform is adopted to switch gold threads between two similar light-emitting chips far away, the length of each section of wire is guaranteed to be short, fusing of the wire is avoided, and the reliability of the laser is improved.

In the embodiment of the present application, the first type light emitting chips 103a and the second type light emitting chips 103b are alternately arranged, and the corresponding reflective prisms are arranged in the same row, so that the two rows of positions do not need to be occupied, which is beneficial to the miniaturization of the laser. And the distribution uniformity of the laser light emitted by the first type light emitting chip 103a and the second type light emitting chip 103b can be higher, and the distribution uniformity of the laser light of each color emitted by the laser is higher. When a multicolor laser is used as a light source of a projection apparatus, the higher the uniformity of each color of laser light emitted from the multicolor laser, the better the display effect of a projection screen formed based on the laser light. Therefore, when the laser in the embodiment of the application is used as the light source of the projection device, the display effect of the projection picture projected by the projection device can be improved.

To sum up, in the laser provided in the embodiment of the present application, the first type of light emitting chips and the second type of light emitting chips may be alternately arranged in the first direction and staggered with each other, and the corresponding reflection prisms may be located in the same row between the first type of light emitting chips and the second type of light emitting chips. Therefore, the first type light-emitting chip, the second type light-emitting chip and the corresponding reflecting prisms can occupy fewer positions, and the miniaturization of the laser is facilitated. The first type of light-emitting chips and the second type of light-emitting chips are arranged alternately, so that the distribution uniformity of laser light of different colors emitted by the laser can be improved.

And at least one switching table is arranged between two adjacent similar light-emitting chips with different light-emitting chips at intervals, and the two similar light-emitting chips can be electrically connected through the at least one switching table. Therefore, the electric connection of each first type of light-emitting chip and the electric connection of each second type of light-emitting chip can be realized, and the normal light emission of the first type of light-emitting chips and the second type of light-emitting chips is ensured.

Alternatively, the material of the substrate 101 in the laser 10 may be metal (e.g., including copper), or may be ceramic. The material of the sidewall 102 of the laser 10 may also be metal or ceramic.

Fig. 5 is a schematic structural diagram of another laser provided in an embodiment of the present application, and fig. 5 may be a schematic diagram of an interface c-c' in the laser shown in fig. 2. Optionally, with continued reference to fig. 2 and 5, the plurality of light emitting chips 103 in the laser 10 may further include a plurality of third type light emitting chips 103 c. The first type of light emitting chip 103a, the second type of light emitting chip 103b and the third type of light emitting chip 103c emit laser light of different colors. The wavelength of the laser light emitted from the third type light emitting chip 103c may be greater than the wavelength of the laser light emitted from the first type light emitting chip 103a and the second type light emitting chip 103 b. For example, the third type of light emitting chip 103c is used for emitting red laser light. Alternatively, the plurality of third type light emitting chips 103c may be arranged in a row in the first direction. The plurality of third type light emitting chips 103c and the corresponding reflection prisms 106 may be located on the same side of the first type light emitting chips 103a and the second type light emitting chips 103 b. As shown in fig. 2, the light emitting direction of the third type light emitting chip 103c may be the same as the light emitting direction of the second type light emitting chip 103 b. Alternatively, the light emitting direction of the third type light emitting chip 103c may be the same as the light emitting direction of the first type light emitting chip 103 a.

Optionally, no other light emitting chip is spaced between any two adjacent light emitting chips in the plurality of third type light emitting chips 103c, and the adjacent third type light emitting chips 103c may be directly connected by a wire. Alternatively, the number of the third type of light emitting chips 103c may be equal to the sum of the number of the first type of light emitting chips 103a and the second type of light emitting chips 103 b. Fig. 2 illustrates that the number of the first type of light emitting chips 103a is 4, the number of the second type of light emitting chips 103b is 3, and the number of the third type of light emitting chips 103c is 7. It should be noted that, in the embodiment of the present application, the number of the light emitting chips of each type may be designed based on a required color mixture ratio and laser intensity, and the number of the light emitting chips of the third type 103c may also be greater than or less than the sum of the numbers of the light emitting chips of the first type 103a and the light emitting chips of the second type 103b, which is not limited in the embodiment of the present application.

As shown in fig. 2, the number of the light emitting chips 103 and the number of the reflecting prisms 106 in the laser 10 may be the same, and the plurality of light emitting chips 103 and the plurality of reflecting prisms 106 in the laser 10 may correspond one to one. Each of the reflecting prisms 106 is used to reflect the laser light emitted from the corresponding light emitting chip 103. Alternatively, the number of the reflecting prisms 106 in the laser 10 may also be smaller than the number of the light emitting chips 103, and there may be at least two light emitting chips 103 corresponding to the same reflecting prism 106. If at least two light emitting chips 103 of the same type adjacent to each other in the first direction without the light emitting chips 103 of the different type spaced apart from each other may correspond to the same reflecting prism 106, the reflecting prism 106 may have a longer length in the first direction. The at least two light emitting chips 103 of the same kind respectively emit laser light to different areas of the same reflecting prism 106.

Fig. 6 is a schematic structural diagram of a laser according to another embodiment of the present application. As shown in fig. 6, the first type light emitting chip 103a and the second first type light emitting chip 103a correspond to the same reflecting prism 106, the third first type light emitting chip 103a and the fourth first type light emitting chip 103a correspond to the same reflecting prism 106, and a row of seven third type light emitting chips 103c correspond to the same reflecting prism 106. Alternatively, the row of the third type light emitting chips 103c may also correspond to a plurality of reflecting prisms 106, such as one reflecting prism 106 for every two or three adjacent third type light emitting chips 103 c. In the laser 10, the number of the reflecting prisms 106 is small, so that the mounting process of the reflecting prisms 106 can be reduced, and the preparation efficiency of the laser 10 can be improved.

In the embodiment of the present application, a surface of the reflection prism 106 opposite to the corresponding light emitting chip 103 may be a light reflecting surface. The laser light emitted from each light emitting chip 103 may be directed to the reflective surface of the corresponding reflective prism 104, which may reflect the incident laser light in a direction away from the base plate 101 (e.g., the z direction in fig. 3 or 4). Alternatively, the surface of the reflection prism 104 opposite to the light emitting chip 103 may be plated with a reflection film to form the light reflection surface.

In the embodiment of the present application, an irradiation area of the laser light emitted from each light emitting chip 103 in the light reflecting surface of the corresponding reflecting prism 103 is referred to as a target area. The laser light emitted from each light emitting chip 103 may be irradiated to a target area in the light reflecting surface of the corresponding reflection prism 103, and further, the laser 10 may be emitted from the target area, so that the distribution position of each laser beam emitted from the laser 10 is determined by the position of the target area in each reflection prism 103. In this embodiment, the central point of the target area in the reflecting prism 106 corresponding to each first type of light emitting chip 103a may be collinear with the central point of the target area in the reflecting prism 106 corresponding to each second type of light emitting chip 103 b. It should be noted that, certain error may inevitably exist when the laser is manufactured, and it is difficult to ensure that each central point is collinear in an absolute sense. In other words, the plurality of center points may be substantially collinear. Such as 0.5 microns, 1 micron, or other values. The distance between each central point and a straight line is 0, that is, the distance between the central points is absolutely collinear.

For example, each small black dot on the reflecting prism 106 in fig. 2 and 6 represents a center point of one target area, the plurality of center points may be collinear, and the lines may be parallel to the first direction. Therefore, the laser of the first color and the laser of the second color emitted by the laser 10 can be arranged in a row, and the arrangement is regular, so that the collection and utilization of the lasers and the subsequent other optical processing can be facilitated. Optionally, the center points of the target areas in the reflecting prisms 106 corresponding to the respective third type light-emitting chips 103c are also collinear or approximately collinear.

With continued reference to fig. 2, the laser 10 in the embodiments of the present application may further include a plurality of heat sinks 105. One heat sink 105 may be associated with each light emitting chip 103 in the laser 10. Each heat sink 105 may be secured to the base plate 101 and each light emitting chip 103 is secured to a corresponding heat sink 105 to effect securement of the light emitting chip 103 to the base plate 101. The heat sink 105 may be used to assist the light emitting chip 103 to emit light quickly, so as to avoid the light emitting chip 103 from being damaged by heat accumulation.

The upper surface of the heat sink 105 is a conductive layer, which may serve as one electrode of the light emitting chip 103, and the upper surface of the light emitting chip 103 may serve as the other electrode. The upper surface of the heat sink 105, such as where the light emitting chip 103 is located, may serve as the positive electrode of the light emitting chip 103, and the upper surface of the light emitting chip 103 may serve as the negative electrode. The upper surface of a component in the laser 10 described in the embodiments of the present application refers to the surface of the component remote from the base plate 101. In the embodiment of the present application, the anodes and the cathodes of the light emitting chips 103 of the same type may be connected in series through the wires, so as to connect the light emitting chips 103 of the same type in series. For example, in two adjacent similar light emitting chips 103, the upper surface of the heat sink 105 where one light emitting chip 103 is located is connected to the upper surface of the other light emitting chip 103 through a wire, so that the two light emitting chips 103 can be connected in series.

Optionally, in this embodiment of the application, a wire may be disposed between two components to be connected by using a gold wire bonding process, so that two ends of the wire are respectively connected to the two components. For example, the wire can be pressed onto the surface metal layer (such as gold layer) of the object to be connected by a cutter, and pressure is applied, and the bonding pad is heated at the same time, so that the contact area between the wire and the gold layer becomes soft, and the molecules of the wire are diffused to the material contacted with the wire, thereby achieving the purpose of welding. For example, the connection between the adapter and the light-emitting chip, between the adapter and the conductive pins, between the light-emitting chip and the light-emitting chip, and between the light-emitting chip and the conductive pins can be realized by gold wire bonding process. Alternatively, the diameter of the wire may be 20 microns to 50 microns, such as 23 microns, or 50 microns. A plurality of wires can be arranged between the two objects so as to ensure the connection reliability of the two objects. Alternatively, the length of each length of wire may be less than or equal to 3 millimeters. Alternatively, the pitch of the adjacent light emitting chips in the same row may range from 1 mm to 3.5 mm.

Optionally, with continued reference to fig. 2, 4, and 6, the laser 10 may further include a plurality of conductive pins 107. The plurality of conductive leads 107 may include a plurality of positive leads and a plurality of negative leads. The positive electrode pin is used for being electrically connected with a positive electrode of an external power supply, and the negative electrode pin is used for being electrically connected with a negative electrode of the external power supply. Each type of light emitting chip in the laser 10 may be connected to an anode pin and a cathode pin, so that an external power source is used to transmit current to the light emitting chip through the anode pin and the cathode pin. Optionally, a portion of the conductive leads 107 extends through the sidewall 102 into the enclosed area of the sidewall 102, and another portion is located outside of the sidewall 102. The portion located outside the sidewall 102 may be connected to a positive or negative electrode of an external power source, and the portion located in the surrounding area of the sidewall 102 may be connected to the corresponding light emitting chip through a wire. The two components connected in the embodiments of the present application each mean that the two components are electrically connected.

Alternatively, the conductive pin 107 may be in a shape of a thin cylinder, or the conductive pin 107 may also be in a shape of a rectangular parallelepiped, or a boss is provided inside and outside the sidewall 102, and the conductive pin 107 may also be supported on the boss in a shape of a sheet. Optionally, the sidewall 102 has an opening in the middle region of the sub-wall into which the conductive pin 107 may be secured; or the edge of the sub-wall near the bottom plate 101 has a notch in which the conductive pin 107 can be fixed. In the embodiment of the present application, the structure, the fixing position, and the fixing manner of the conductive pin 107 are not limited, and it is only necessary to ensure that the conductive pin 107 can communicate the components in the area surrounded by the sidewall 102 with the external power source.

Alternatively, the plurality of conductive leads 107 may be located on two sides of the sidewall 102, respectively, such as a positive lead located on one side of the sidewall 102 and a negative lead located on the opposite side of the sidewall 102 from the positive lead. The side wall 102 may be defined by a plurality of sub-walls, for example, if the side wall 102 is square tube-shaped, and the orthographic projection of the side wall 102 on the bottom plate 101 is approximately rectangular, then the side wall 102 can be regarded as being defined by four sub-walls. The plurality of conductive leads 107 are respectively fixed to two opposite sub-walls of the sidewall 102. If the positive electrode pins are fixed with the first sub-wall, the negative electrode pins are fixed with the second sub-wall opposite to the first sub-wall. Alternatively, the two opposing sub-walls may be arranged along a first direction (e.g., the x-direction, i.e., the arrangement direction of the light emitting chips). Two ends of each row of light emitting chips 103 are respectively connected with the conductive pins 107 on the two sub-walls, and the light emitting chip 103 closest to any one of the two sub-walls in each row of light emitting chips 103 is connected with the conductive pin 107 on any one of the two sub-walls. Optionally, each of the two sub-walls may also be provided with both a positive electrode pin and a negative electrode pin, which is not limited in this embodiment of the application.

Alternatively, the number of positive leads in the plurality of conductive leads 107 of the laser 10 may be equal to the number of negative leads. Alternatively, the number of conductive pins 107 may be twice the number of classes of light emitting chips 103 in the laser 10. Each type of light emitting chip 103 may be connected in series and connected to an anode pin and a cathode pin, the anode pins connected to different types of light emitting chips 103 are different, and the cathode pins connected to different types of light emitting chips 103 are also different, i.e., different types of light emitting chips 103 may not share a conductive pin. As shown in fig. 2 and 6, the laser 10 includes three types of light emitting chips 103 and includes six conductive leads 107. Three of the six conductive leads 107 may be fixed to the left sub-wall of the sidewall 102, and the other three negative leads may be fixed to the right sub-wall of the sidewall 102.

Illustratively, each type of light emitting chip 103 may be connected to the positive and negative leads nearest thereto. As shown in fig. 2 and fig. 6, a row of the first type light emitting chips 103a, a row of the second type light emitting chips 103a, and a row of the third type light emitting chips 103c are sequentially arranged along the y direction, so that the three types of light emitting chips can be respectively connected to the conductive leads 107 sequentially arranged on the sidewall 102 along the y direction. The first type of light emitting chip 103a is connected to a first positive pin and a first negative pin, the second type of light emitting chip 103b is connected to a second positive pin and a second negative pin, and the third type of light emitting chip 103c is connected to a third positive pin and a third negative pin.

Alternatively, the number of conductive pins 107 may also be less than twice the number of classes of light emitting chips 103. At this time, at least two types of light emitting chips 103 may share the conductive pin 107, that is, the same positive pin or the same negative pin is connected, which is not limited in the embodiment of the present application.

Fig. 7 is a schematic structural diagram of an adapter station according to an embodiment of the present application. As shown in fig. 7, the interposer 104 may include an insulator 1041 and a first metal layer 1042 stacked in sequence in a direction away from the base plate 101 (i.e., the z-direction). The insulator 1041 can be fixed to the base plate 101 for carrying the first metal layer 1042, and the first metal layer 1042 is used for connecting a wire. The insulator 1041 is away from the entire area or a partial area in the surface of the base plate 101.

Fig. 8 is a schematic structural diagram of another transfer station provided in an embodiment of the present application. As shown in fig. 8, on the basis of fig. 7, the interposer 104 may further include a second metal layer 1043. The second metal layer 1043 may be located on a side of the insulator 1041 away from the first metal layer 1042, and the second metal layer 1043 may be fixed to the base plate 101. Since the metal is firmly fixed to the bottom plate 101, the second metal layer 1043 is fixed to the bottom plate 101, so that the stability of the adapter 104 can be improved. The metal layer may also be formed by electroplating. Alternatively, the second metal layer 1043 may cover all or a part of the surface of the insulator 1041 away from the base plate 101.

Alternatively, metal layers may be formed on both opposite sides of the insulator 1041 to obtain the interposer 104. The shape of the interposer 104 may be determined based on the shape of the insulator 1041. Illustratively, the insulator 1041 has a prismatic shape, such as a quadrangular prism, and the transition table 104 has a quadrangular prism shape accordingly. The adapting stage 104 may also have a cylindrical shape, a pentagonal prism shape, or a triangular prism shape, and the embodiment of the present invention is not limited thereto.

Alternatively, the first metal layer 1042 and the second metal layer 1043 may both be of a titanium/platinum/gold structure, that is, include a titanium layer, a platinum layer, and a gold layer stacked in sequence in the z direction. Optionally, the three metals may also be replaced by other metals, and the embodiment of the present application is not limited. Optionally, the insulator 1041 may be made of aluminum nitride, aluminum oxide, or other insulating materials, which is not limited in this embodiment.

In the embodiment of the present application, the number of the switching stages 104 between the adjacent light emitting chips 103 is inversely related to the maximum bearable length of the wires, and is positively related to the distance between the light emitting chips 103. An alternative arrangement of the transfer station 104 in the embodiment of the present application is described below with reference to the drawings.

Alternatively, in the first-type light emitting chip 103a and the second-type light emitting chip 103b, the number of the switching stages 104 between two adjacent similar light emitting chips 103 spaced by different types of light emitting chips 103 in the first direction may be equal to the number of the different types of light emitting chips 103 between the two adjacent similar light emitting chips 103. Alternatively, each of the plurality of relay stations 104 may be aligned with one of the different types of light emitting chips 103 in the second direction. The two objects described in the embodiments of the present application are aligned in a certain direction, which may mean that the center points of the two objects are aligned in the certain direction, and the line connecting the two center points is parallel to the certain direction. In the embodiment of the present application, any two of the plurality of the interposer pads 104 adjacent to each other in the first direction without the light emitting chip 103 therebetween are directly connected to each other by a wire. It should be noted that the adapting stage 104 is aligned with the light emitting chip 103 in the second direction, so that the distance difference between the components that need to be connected by the wires in the laser is small, and the difference in the wire arrangement effect at different positions is small.

Illustratively, as shown in fig. 2 and 6, a second light emitting chip 103b is spaced in the x-direction between a second first light emitting chip 103a and a third first light emitting chip 103a, and an interposer 104 is disposed between the two first light emitting chips 103 a. The interposer 104 can be aligned with the second type of light emitting chip 103b in the y-direction. Two sides of the adapting table 104 are respectively connected with the two first-type light-emitting chips 103a through wires to realize the connection of the two first-type light-emitting chips 103 a. Further illustratively, in the x-direction, two first-type light-emitting chips 103a are spaced between every two adjacent second-type light-emitting chips 103 b. Two transfer stages 104 are present between the two adjacent second type light emitting chips 103 b. The two adapter stations 104 may be aligned with the two second-type light-emitting chips 103b in the y direction, respectively. The two adapting stations 104 are connected by a wire, and two sides of the two adapting stations are respectively connected with the two second-type light-emitting chips 103b, so that the second-type light-emitting chips 103b are connected.

Optionally, the number of the transfer platforms 104 between two adjacent similar light emitting chips 103 may not be equal to the number of different light emitting chips 103 spaced in the first direction between the two adjacent similar light emitting chips 103. In this embodiment of the application, the adapting stage 104 may not be aligned with any light emitting chip 103 in the second direction, and this embodiment of the application is not limited.

In the embodiment of the present application, each type of light emitting chip 103 is connected in series and then needs to be connected with a positive electrode pin and a negative electrode pin. If a light emitting chip 103 is close to the first sub-wall or the second sub-wall of the sidewall 102, but there is no light emitting chip 103 different from the light emitting chip 103 between the sub-walls close to the light emitting chip 103 in the first direction, there may be no interposer 104 between the light emitting chip 103 and the sub-walls, and the light emitting chip 103 may be directly connected to the conductive pins 107 fixed on the sub-walls through wires, so as to achieve the connection between the light emitting chip and the conductive pins 107. For example, in fig. 2 and fig. 6, the first second type light emitting chip 103b is directly connected to the second positive electrode pin fixed on the first sub-wall through a wire, and the third second type light emitting chip 103b is directly connected to the second negative electrode pin fixed on the second sub-wall through a wire.

Since the first and second types of light emitting chips 103a and 103b are alternately arranged in the first direction, a target light emitting chip among at least one type of light emitting chips 103 exists in the first and second types of light emitting chips 103a and 103 b. The target light emitting chip is closest to one sub-wall of the fixed conductive pin 107 among the light emitting chips of this type, and another type of light emitting chip is spaced between the target light emitting chip and the sub-wall in the first direction. The target light emitting chip needs to be connected to a conductive pin 107 fixed on the sub-wall, but the target light emitting chip is far away from the conductive pin 107. At least one adapter 104 may be disposed in front of the target light emitting chip and the sub-wall, and the target light emitting chip may be connected to the conductive pins 107 fixed on the sub-wall through the at least one adapter 104. The connection of the light emitting chip of the type to which the target light emitting chip belongs to the conductive pins 107 is thus achieved. The at least one docking station 104 is also in the same row as the target light emitting chip. Optionally, the at least one adapter stage 104 may also be aligned in the second direction with another type of light emitting chip.

In fig. 2 and 6, the first kind of light emitting chip 103a and the fourth first kind of light emitting chip 103a are both target light emitting chips. The first type light emitting chip 103a needs to be connected with the positive electrode pin on the first sub-wall, and the fourth first type light emitting chip 103a needs to be connected with the negative electrode pin on the second sub-wall. A switching table 104 is arranged between the first-type light-emitting chip 103a and the first sub-wall, and the first-type light-emitting chip 103a is connected with a first positive electrode pin fixed on the first sub-wall through the switching table 104. A switching table 104 is arranged between the fourth first-type light-emitting chip 103a and the second sub-wall, and the fourth first-type light-emitting chip 103a is connected with a first negative electrode pin fixed on the second sub-wall through the switching table 104.

Alternatively, a plurality of the switching stages 104 and a plurality of the second type light emitting chips 103b in the laser 10, which are located in the same row as the plurality of the first type light emitting chips 103a, correspond one to one, and each of the switching stages 104 is aligned with the corresponding second type light emitting chip 103b in the second direction. The plurality of the switching stages 104, which are located in the same row as the plurality of the second type light emitting chips 103b, correspond to the plurality of the first type light emitting chips 103a one to one, and each of the switching stages 104 is aligned with the corresponding first type light emitting chip 103a in the second direction.

The laser provided by the embodiment of the application can be a high-power semiconductor laser. In the laser provided by the embodiment of the application, the first type of light-emitting chips and the second type of light-emitting chips are staggered in the first direction and staggered with each other, so that the reflecting prism is positioned between the two types of light-emitting chips, and the switching table is arranged at a proper position, so that the normal circuit connection of the light-emitting chips can be realized through a simpler gold wire bonding process, and the normal light emission of the laser is ensured. The laser has high miniaturization degree, and can simultaneously meet the requirements of color expressive force of full-color laser and uniformity of various colors of laser in a laser television or projection equipment.

In addition, the number of the switching tables in the laser is small, so that the steps of fixing the switching tables can be reduced, the production time of the laser is saved, and the production efficiency of the laser is improved. In addition, through the arrangement of the adapter switching lead, circuit connection of all parts can be realized only by the most basic gold wire bonding process, additional design consideration on the basic gold wire bonding process is not needed, the connection reliability of the parts can be ensured, the time wasted due to repair is reduced to a certain extent, and the production efficiency of the laser is improved.

Because the gold wire bonding process in the laser is simple, the requirements on process equipment and production operators are low, and certain manufacturing cost advantage can be achieved. The transfer platform in the laser has a simpler structure, so that the transfer platform different from the industry standard is not required to be specially customized, the manufacturing cost can be relatively lower, and the cost of the laser is lower. The structure of each switching platform in the laser can be the same, so that new materials do not need to be introduced, and the follow-up production management can be facilitated to a certain extent.

Optionally, controllability of gold threads in the gold thread bonding process during preparation of the laser can be strong, the distance between adjacent gold threads after bonding can be uniform, the gold thread bonding process can be stable, gold thread adhesion or crossing is not easy to cause, the risk of product short circuit can be effectively reduced, and the reliability of the laser is improved.

Fig. 9 is a schematic structural diagram of another laser provided in another embodiment of the present application, fig. 10 is a schematic structural diagram of another laser provided in another embodiment of the present application, and fig. 11 is a schematic structural diagram of another laser provided in another embodiment of the present application. Fig. 9 may be a schematic diagram of a section a-a ' of the laser shown in fig. 2, fig. 10 may be a schematic diagram of a section b-b ' of the laser shown in fig. 2, and fig. 11 may be a schematic diagram of a section c-c ' of the laser shown in fig. 2. As shown in fig. 9 to 11, the laser 10 may further include a light-transmissive sealing layer 108 and a collimating mirror set 109 on the basis of fig. 2 to 6. The light-transmitting sealing layer 108 covers a side of the sidewall 102 away from the bottom plate 101, and the collimating lens group 109 may include a plurality of collimating lenses T, which correspond to the plurality of light emitting chips 103 in the laser 10 one to one. Each light emitting chip 103 can emit laser to the corresponding reflection prism 106, the laser is reflected on the reflection prism 106 and then emitted to the corresponding collimating lens T through the light-transmitting sealing layer 109, and the collimating lens T collimates the emitted laser and then emits the laser, thereby completing the light emission of the laser.

To sum up, in the laser provided in the embodiment of the present application, the first type of light emitting chips and the second type of light emitting chips may be alternately arranged in the first direction and staggered with each other, and the corresponding reflection prisms may be located in the same row between the first type of light emitting chips and the second type of light emitting chips. Therefore, the first type light-emitting chip, the second type light-emitting chip and the corresponding reflecting prisms can occupy less positions, and the miniaturization of the laser is facilitated. The first type of light-emitting chips and the second type of light-emitting chips are alternately arranged, so that the distribution uniformity of laser with different colors emitted by the laser can be improved.

And at least one switching table is arranged between two adjacent similar light-emitting chips with different light-emitting chips at intervals, and the two similar light-emitting chips can be electrically connected through the at least one switching table. Therefore, the electric connection of each first-type light-emitting chip and each second-type light-emitting chip can be realized, and the normal light emission of the first-type light-emitting chips and the second-type light-emitting chips is ensured.

It is noted that the terms "comprises" and "comprising," as well as any variations thereof, are intended to cover but not to be exhaustive in this application. In the embodiments of the present application, the terms "first", "second" to "nth" are used for descriptive purposes only and are not to be construed as indicating or implying relative importance. The term "at least one" refers to one or more. The term "plurality" means two or more unless expressly limited otherwise. "substantially" and "approximately" mean within an acceptable error range, a person skilled in the art can solve the technical problem to be solved within a certain error range, and basically achieve the technical effect to be achieved. In the drawings, the size of layers and regions may be exaggerated for clarity of illustration. Also, it will be understood that when an element or layer is referred to as being "on" another element or layer, it can be directly on the other element or layer or intervening layers may also be present. Like reference numerals refer to like elements throughout.

The above description is only exemplary of the present application and should not be taken as limiting, as any modification, equivalent replacement, or improvement made within the spirit and principle of the present application should be included in the protection scope of the present application.

Claims (10)

1. A laser, characterized in that the laser comprises: the LED display panel comprises a base plate, a tubular side wall, a plurality of light-emitting chips, a plurality of reflecting prisms and a plurality of adapter stations, wherein the tubular side wall is positioned on the base plate; each light-emitting chip corresponds to one reflecting prism, and the reflecting prism is positioned at the light-emitting side of the corresponding light-emitting chip;

the plurality of light-emitting chips comprise a plurality of first-type light-emitting chips and a plurality of second-type light-emitting chips, and the colors of the laser light emitted by different types of chips are different; the first type of light-emitting chips and the second type of light-emitting chips are alternately arranged in a first direction and staggered with each other;

the reflecting prisms corresponding to the first type of light-emitting chips and the reflecting prisms corresponding to the second type of light-emitting chips are positioned in the same row in the first direction, and positioned between the first type of light-emitting chips and the second type of light-emitting chips in a second direction, wherein the second direction is vertical to the first direction;

the switching table is arranged between two adjacent similar light-emitting chips which are spaced in the first direction and provided with different types of light-emitting chips, and the two adjacent similar light-emitting chips are electrically connected through the switching table.

2. The laser device of claim 1, wherein the center points of the target areas in the light-reflecting surface are collinear in the reflecting prisms corresponding to the first and second types of light-emitting chips; the reflecting surface is a surface of the reflecting prism opposite to the corresponding light-emitting chip, and the target area is an area irradiated by laser emitted by the light-emitting chip in the reflecting surface.

3. The laser of claim 1, wherein the interposer includes an insulator and a first metal layer stacked in sequence in a direction away from the substrate;

and the two adjacent similar light-emitting chips are connected through the first metal layer in the adapter table.

4. The laser of claim 3, wherein the transfer stage further comprises: and the second metal layer is positioned on one side of the insulator, which is far away from the first metal layer, and the second metal layer is fixed with the bottom plate.

5. The laser device as claimed in any one of claims 1 to 4, wherein the number of said plurality of said switching stages between two adjacent ones of said plurality of said like light emitting chips is equal to the number of said plurality of said different light emitting chips spaced apart in said first direction between two adjacent ones of said plurality of said like light emitting chips.

6. The laser of any one of claims 1 to 4, wherein each of said plurality of said switching stages between two adjacent light emitting chips of the same type is aligned with one of said plurality of light emitting chips of different type in said second direction.

7. The laser device according to any one of claims 1 to 4, wherein two first light emitting chips are spaced between any two adjacent second light emitting chips in the first direction.

8. The laser of any one of claims 1 to 4, further comprising a plurality of conductive pins; the side wall is surrounded by a plurality of sub-walls, and the plurality of conductive pins are respectively fixed with two sub-walls opposite to each other in the first direction in the plurality of sub-walls;

in the first-type light-emitting chips and the second-type light-emitting chips, the switching table is arranged between a target light-emitting chip close to any one of the two sub-walls and any one of the two sub-walls, and the target light-emitting chip is electrically connected with one of the conductive pins on any one of the two sub-walls through the switching table;

the target light-emitting chip is any one of the first type light-emitting chip and the second type light-emitting chip; in the first direction, another type of light-emitting chip different from the any type of light-emitting chip is spaced between the target light-emitting chip and the any sub-wall.

9. The laser of claim 8, wherein the plurality of conductive pins comprises a plurality of positive pins and a plurality of negative pins, the plurality of positive pins being secured to one of the two sub-walls and the plurality of negative pins being secured to the other of the two sub-walls;

each type of the light-emitting chips is connected in series and is electrically connected with one positive electrode pin and one negative electrode pin; the different types of light-emitting chips are electrically connected with the different positive electrode pins and the different negative electrode pins.

10. The laser of any one of claims 1 to 4 and 9, wherein the plurality of light-emitting chips further comprises a plurality of third type light-emitting chips;

the plurality of third type light emitting chips are positioned in the same row and are positioned on one side of the plurality of first type light emitting chips and the plurality of second type light emitting chips in the second direction.

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