CN217387204U - Thermoelectric refrigerator and electronic apparatus - Google Patents
Thermoelectric refrigerator and electronic apparatus Download PDFInfo
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- CN217387204U CN217387204U CN202221236695.XU CN202221236695U CN217387204U CN 217387204 U CN217387204 U CN 217387204U CN 202221236695 U CN202221236695 U CN 202221236695U CN 217387204 U CN217387204 U CN 217387204U
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Abstract
The utility model relates to a thermoelectric refrigerator and electronic equipment, thermoelectric refrigerator are including relative two ceramic substrates, semiconductor crystal and the conducting strip that sets up, and conducting strip and semiconductor crystal are located between two ceramic substrates, and semiconductor crystal is connected with the conducting strip electricity, and ceramic substrate is provided with the storage tank towards semiconductor crystal's first face, and the conducting strip holding is in the storage tank to conducting strip thickness is less than the degree of depth of storage tank. Based on this, when the conductive sheet is installed in the containing groove, the height of the surface of the conductive sheet facing the semiconductor crystal is lower than that of the first surface of the ceramic substrate. When the solder paste is used for connecting the semiconductor crystal and the conducting plate, the solder paste can be prevented from overflowing to other conducting plates adjacent to the conducting plate, so that the phenomenon of tin connection is avoided. In addition, the arrangement of the accommodating groove allows the increase of the semiconductor crystals connected with the conducting strips, the high-density semiconductor crystal mounting can be realized, and the refrigerating performance of the thermoelectric refrigerator can be effectively improved.
Description
Technical Field
The utility model relates to a thermoelectric refrigeration technology field specifically relates to a thermoelectric refrigerator and have this thermoelectric refrigerator's electronic equipment.
Background
The thermoelectric refrigerator is a novel refrigerator which achieves the purpose of refrigeration through the Peltier effect, and the Peltier effect is that when direct current is introduced into a thermocouple composed of two different semiconductor materials, heat transfer can occur at a cold end and a hot end. The thermoelectric cooler generally includes two ceramic substrates oppositely disposed, and a P-type semiconductor crystal and an N-type semiconductor crystal are sequentially spaced and connected in series between the two ceramic substrates, and after the P-type semiconductor crystal and the N-type semiconductor crystal are energized, cooling or heating can be performed.
In the prior thermoelectric refrigerator, when the semiconductor crystal is mounted, the printed solder paste is easy to overflow to the conducting strips electrically connected with the semiconductor crystal, so that the phenomenon of tin connection between the adjacent conducting strips is caused. Because the internal structure of the thermoelectric refrigerator works in series, partial structure failure is directly caused after tin connection, and the overall performance of the thermoelectric refrigerator is abnormal. Generally, to avoid tin bridging, a method is used in which the distance between the metal sheets is increased, however this method results in a reduction in the number of semiconductor crystals that can be accommodated in the thermoelectric refrigerator, resulting in a reduction in the refrigeration of the thermoelectric refrigerator.
SUMMERY OF THE UTILITY MODEL
The utility model aims at providing a thermoelectric cooler and consumer in this thermoelectric cooler, is favorable to avoiding appearing the continuous tin phenomenon, is favorable to promoting thermoelectric cooler's refrigeration performance.
In order to achieve the above object, the utility model provides a thermoelectric refrigerator, including relative two ceramic substrates, semiconductor crystal and the conducting strip that sets up, conducting strip and semiconductor crystal are located between two ceramic substrates, the semiconductor crystal with the conducting strip electricity is connected, ceramic substrate towards be provided with the storage tank on the first face of semiconductor crystal, the conducting strip holding is in the storage tank, and conducting strip thickness is less than the degree of depth of storage tank.
Optionally, the first face is spaced from the second face of the conductive sheet facing the semiconductor crystal by a distance of 0.05-0.1 mm.
Optionally, a gap is formed between the side surface of the conductive sheet and the side surface of the accommodating groove.
Optionally, the projection of the conductive sheet on the ceramic substrate is a polygon with an irregular shape.
Optionally, the projection of the conductive sheet on the ceramic substrate is in an i shape.
Optionally, the second face of the conductive sheet facing the semiconductor crystal is provided with an aperture.
Optionally, the number of the holes is multiple, and the holes are spaced and uniformly distributed on the second surface.
Optionally, the ceramic substrate is a silicon nitride ceramic substrate.
Optionally, the welding manner adopted between the conductive sheet and the semiconductor crystal is active metal brazing.
According to another aspect of the present invention, an electronic device is provided, which includes the thermoelectric refrigerator described above.
The utility model provides an among the thermoelectric refrigerator, because the degree of depth of storage tank is greater than the thickness of conducting strip, after the conducting strip was installed in the storage tank, highly being less than ceramic substrate's the first face of the face towards semiconductor crystal on the conducting strip. Therefore, when the solder paste is used for connecting the semiconductor crystal and the conducting plate, the solder paste can be prevented from overflowing to other conducting plates adjacent to the conducting plate, so that the phenomenon of tin connection is avoided, and the normal work of the thermoelectric refrigerator is guaranteed.
In addition, because the conducting strips are arranged in the accommodating groove, the tin connection phenomenon is avoided, and the distance between the conducting strips is reduced. Based on this, semiconductor crystal that the permission increases and be connected with the conducting strip can realize the semiconductor crystal of high density and paste, and the same ceramic substrate area can increase more semiconductor crystal, effectively promotes thermoelectric cooler's refrigeration performance.
Other features and advantages of the present invention will be described in detail in the detailed description which follows.
Drawings
The accompanying drawings, which are included to provide a further understanding of the invention and are incorporated in and constitute a part of this specification, illustrate embodiments of the invention and together with the description serve to explain the principles of the invention and not to limit the invention. In the drawings:
fig. 1 is a schematic top view of a ceramic substrate and a conductive sheet in an assembled state according to an embodiment of the present invention, wherein a projection of the conductive sheet on the ceramic substrate is rectangular;
fig. 2 is a schematic side view of a ceramic substrate and a conductive sheet in an assembled state according to an embodiment of the present invention;
FIG. 3 is a schematic longitudinal cross-sectional view of a thermoelectric cooler in accordance with an embodiment of the present invention;
fig. 4 is a schematic top view of a ceramic substrate and a conductive sheet in an assembled state according to an embodiment of the present invention, wherein a projection of the conductive sheet on the ceramic substrate is in an i shape;
fig. 5 is a schematic top view of a ceramic substrate and a conductive sheet in an assembled state according to an embodiment of the present invention, wherein a projection of the conductive sheet on the ceramic substrate is in an i shape, and a hole is formed on the conductive sheet;
fig. 6 is a schematic perspective view of a thermoelectric refrigerator according to an embodiment of the present invention.
Description of the reference numerals
100-a thermoelectric refrigerator; 10-a ceramic substrate; 11-a first side; 12-a receiving groove; 20-a semiconductor crystal; a 21-P type semiconductor crystal; a 22-N type semiconductor crystal; 30-a conductive sheet; 31-a second face; 32-well; 40-wire leads; and (50) sealing glue.
Detailed Description
The following detailed description of the embodiments of the present invention will be made with reference to the accompanying drawings. It is to be understood that the description of the embodiments herein is for purposes of illustration and explanation only and is not intended to limit the invention.
In the present invention, the terms "upper and lower" are defined in the direction of the drawing. The terms "first," "second," and the like are used solely to distinguish one from another and are not to be construed as indicating or implying relative importance.
In the description of the present invention, it should be further noted that, unless otherwise explicitly stated or limited, the terms "disposed" and "connected" should be interpreted broadly, and may be, for example, fixedly connected, detachably connected, or integrally connected; they may be connected directly or indirectly through intervening media, or they may be interconnected between two elements. The specific meaning of the above terms in the present invention can be understood in specific cases to those skilled in the art.
As shown in fig. 1 to 6, the present invention provides a thermoelectric refrigerator 100 and an electronic device (not shown) having the thermoelectric refrigerator 100. The electronic device may include various electronic devices and terminal devices, and may specifically include but is not limited to vehicles such as vehicles; medical equipment such as a PCR (polymerase chain reaction) detector; terminal equipment such as a smart phone, a smart television set-top box, a personal computer, wearable equipment and an intelligent broadband; telecommunication equipment such as a wireless network, a fixed network, a server and the like; chip module, memory and other electronic devices. Not to be construed as limiting, and can be any type of electronic device suitable for use with the thermoelectric cooler 100. For example, taking a vehicle as an example, the thermoelectric cooler 100 may be applied to a seat and an air conditioning system of the vehicle.
As shown in fig. 1 to 6, the thermoelectric refrigerator 100 of the present invention includes two ceramic substrates 10, a semiconductor crystal 20 and a conducting strip 30, which are oppositely disposed, wherein the conducting strip 30 and the semiconductor crystal 20 (which may include a P-type semiconductor crystal 21 and an N-type semiconductor crystal 22) are disposed between the two ceramic substrates 10, the semiconductor crystal 20 is electrically connected to the conducting strip 30, a containing groove 12 is disposed on a first surface 11 of the ceramic substrate 10 facing the semiconductor crystal 20, the conducting strip 30 is contained in the containing groove 12, and a thickness of the conducting strip 30 is smaller than a depth of the containing groove 12, i.e., the first surface 11 and a second surface 31 of the conducting strip 30 facing the semiconductor crystal 20 are spaced apart from each other, and a height of the second surface 31 on the conducting strip 30 is lower than the first surface 11 of the ceramic substrate 10 in an up-down direction of fig. 2.
In the thermoelectric refrigerator 100 of the present invention, since the depth of the accommodating groove 12 is greater than the thickness of the conductive sheet 30, after the conductive sheet 30 is installed in the accommodating groove 12, the height of the surface (i.e., the second surface 31) of the conductive sheet 30 facing the semiconductor crystal 20 is lower than the first surface 11 of the ceramic substrate 10. Thus, when the solder paste is used to connect the semiconductor crystal 20 and the conductive sheet 30, the solder paste can be prevented from overflowing to other conductive sheets 30 adjacent to the conductive sheet 30, which is beneficial to avoiding the occurrence of the tin-connecting phenomenon and ensuring the normal operation of the thermoelectric refrigerator 100.
In addition, since the conductive sheets 30 are disposed in the accommodating groove 12, it is possible to reduce the distance between the conductive sheets 30 while avoiding the occurrence of the wicking phenomenon. Based on this, the semiconductor crystals 20 connected with the conducting strips 30 are allowed to be increased, the mounting of the semiconductor crystals 20 with high density can be realized, more semiconductor crystals 20 can be increased in the same area of the ceramic substrate 10, and the refrigerating performance of the thermoelectric refrigerator 100 is effectively improved.
It was found that, under the condition that the areas of the ceramic substrates 10 are equal, the number of pairs of semiconductor crystals 20 that can be accommodated by the thermoelectric refrigerator 100 having the accommodating tank 12 is increased by 50% and the cooling efficiency is improved by 30% as compared with the thermoelectric refrigerator 100 not having the accommodating tank. For example, if the thermoelectric refrigerator 71 not provided with the accommodation groove 12 described above accommodates the semiconductor crystal 20 and the cooling capacity is 17W under the condition that the areas of the ceramic substrates 10 are equal, the thermoelectric refrigerator 100 provided with the accommodation groove 12 described above can accommodate 111 the semiconductor crystal 20 and the cooling capacity is 22W.
Wherein a pair of semiconductor crystals 20 includes a P-type semiconductor crystal 21 and an N-type semiconductor crystal 22. The semiconductor crystal 20 is here of a smaller size and may also be referred to as a semiconductor die.
Alternatively, conductive sheet 30 may be a lower cost, conductive sheet 30 of metal having a guaranteed conductivity,
the utility model discloses do not do the restriction to the processing method of storage tank 12, optionally, can adopt the method of sculpture to process out foretell storage tank 12.
The utility model discloses do not injectly to the specific size of the height that second face 31 on the conducting strip 30 is less than first face 11 of ceramic substrate 10, promptly, the utility model discloses do not do the injecture to spaced distance between first face 11 of ceramic substrate 10 and the conducting strip 30 second face 31 towards semiconductor crystal 20. Alternatively, in an embodiment of the invention, the distance may be 0.05-0.1 mm. Within this range, the occurrence of the phenomenon of tin connection between adjacent conductive sheets 30 can be effectively avoided.
Optionally, in an embodiment of the present invention, a gap is formed between the side surface of the conductive sheet 30 and the side surface of the accommodating groove 12. For example, when the receiving slot 12 and the conductive sheet 30 are rectangular, at least one of the length and the width of the receiving slot 12 is smaller than the length and the width of the conductive sheet 30. The advantages of such an arrangement are: on one hand, the gap provides a containing space for the solder paste, which is beneficial to ensuring that the redundant solder paste does not overflow the containing groove 12; on the other hand, since the conductivity of the solder paste is greater than that of the semiconductor crystal 20, when the solder paste is adhered, the refrigeration function of the thermoelectric refrigerator 100 is affected, and therefore, by providing a gap between the side surface of the conductive sheet 30 and the side surface of the accommodating groove 12, the risk that the solder paste is adhered to the surface of the semiconductor crystal 20 is reduced when the semiconductor crystal 20 is attached, and the refrigeration performance of the thermoelectric refrigerator 100 is ensured.
It is understood that in other embodiments of the present invention, there may be no gap between the side of the conductive sheet 30 and the side of the accommodating groove 12, that is, the size of the conductive sheet 30 is adapted to the accommodating groove 12 except that the thickness is smaller than the depth of the accommodating groove 12, for example, when the accommodating groove 12 and the conductive sheet 30 are rectangular, the length and width of the accommodating groove 12 are equal to the length and width of the conductive sheet 30.
The gap between the side surface of the conductive sheet 30 and the side surface of the accommodating groove 12 may have any suitable size, which is not limited by the present invention. Optionally, in an embodiment of the invention, the gap has a length of 0.05-0.1 mm. In this range, an accommodating space can be reserved for more solder paste, and the influence on the size of the conducting strip 30 due to the reserved gap can be avoided, so that the conducting connection between the conducting strip 30 and the semiconductor crystal 20 is ensured to be normal, and the risk that the solder paste is adhered to the surface of the semiconductor crystal 20 is effectively reduced.
The utility model discloses do not injecing storage tank 12 and conducting strip 30's specific size, optionally the utility model discloses an in the embodiment, storage tank 12's length and width are respectively for can be 1.2mm and 3mm, and the degree of depth can be 0.35 mm. The length, width and width of the conductive sheet 30 may be 1.15mm and 2.95mm, respectively.
The utility model discloses in, the shape of conducting strip 30 can be regular shape, also can be anomalous shape, and the shape of conducting strip 30 can be the dysmorphism promptly, the utility model discloses do not limit to this. For example, referring to fig. 1, the conductive sheet 30 may have a rectangular parallelepiped structure, i.e., a projection of the conductive sheet 30 on the ceramic substrate 10 is rectangular. Or the projection of the conductive sheet 30 on the ceramic substrate 10 may be a polygon with an irregular shape, as shown in fig. 4 and 5, and the projection of the conductive sheet 30 on the ceramic substrate 10 is i-shaped.
Researches show that the shape of the conducting strip 30 is irregular, so that the thermal stress generated by high temperature when the semiconductor crystal 20 and the conducting strip 30 are welded is easier to release, and the reliability of welding the semiconductor crystal 20 and the conducting strip 30 is improved, thereby being beneficial to improving the working reliability of the thermoelectric refrigerator 100.
For example, taking the conductive sheet 30 as an operative structure as an example, referring to table 1, the i-shaped conductive sheet 30 is more likely to release the thermal stress generated by the high temperature when the semiconductor crystal 20 is welded to the conductive sheet 30.
In table 1, under the same conditions and in an experimental environment of 85 ℃/85% humidity 500H at high temperature and high humidity, the resistance fluctuation of the i-shaped conductive sheet 30 is smaller than that of the rectangular parallelepiped conductive sheet 30. The resistance fluctuation is small, the representation performance is more stable, and the refrigeration effect is better. Therefore, as can be seen from table 1, the i-shaped conductive sheet 30 is beneficial to improving the refrigeration performance of the thermoelectric refrigerator 100 and the operational reliability thereof.
Here, the experiment of the thermoelectric refrigerator 100 was performed based on the high temperature and high humidity reliability experiment standard "SJ-T10135-2010 TEC1 series thermoelectric cooling module general specifications".
Optionally, as shown in fig. 5, in an embodiment of the present invention, the second surface 31 of the conductive sheet 30 is provided with a hole 32, so that on one hand, a portion of solder paste can be contained in the hole 32, and the probability of occurrence of the tin-connecting phenomenon can be further reduced; on the other hand, the existence of the holes 32 can block the flow of solder paste to a certain extent, reduce the risk of insufficient soldering, and is beneficial to improving the reliability of the soldering between the semiconductor crystal 20 and the conducting strip 30; on the other hand, the presence of the holes 32, which is equivalent to the division of the large face of the second face 31 of the conductive sheet 30 into a plurality of small areas, facilitates the release of the thermal stress generated by the high temperature when welding the crystal.
The shape of the hole 32 may include, but is not limited to, circular and square. In addition, the hole 32 may be a through hole 32 or a blind hole 32, which is not limited by the present invention,
alternatively, as shown in fig. 5, the number of the holes 32 is plural, and the plural holes 32 are spaced and uniformly distributed on the conductive sheet 30. The provision of the plurality of holes 32 allows the conductive sheet 30 to be divided into smaller areas, further facilitating the release of thermal stresses generated by the high temperatures used to solder the crystal. And a plurality of holes 32 are arranged, which is beneficial to ensuring the uniform release of the thermal stress of each area of the conducting strip 30 and the consistency of the performance of each area of the conducting strip 30.
In order to ensure that the conductive properties of the conductive sheet 30 satisfy performance, the area of the holes 32 should not exceed a certain proportion of the area of the second face 31 of the conductive sheet 30, for example, the area of the holes 32 should not exceed 50% of the area of the second face 31 of the conductive sheet 30.
During the assembly of thermoelectric cooler 100, soldering the crystals requires a high problem, such as around 350 ℃. Since the conductive sheet 30 and the ceramic substrate 10 have different thermal expansion coefficients, a certain thermal stress is generated during soldering, and the location where the thermal stress is concentrated may reduce the reliability of the product, possibly causing premature failure of the thermoelectric refrigerator 100.
In view of this, in order to improve the reliability of the welding between the conductive sheet 30 and the ceramic substrate 10, optionally, in an embodiment of the present invention, the ceramic substrate 10 is a silicon nitride ceramic substrate, that is, the ceramic substrate 10 using silicon nitride (Si3N4) as a base material, for example, the ceramic substrate 10 is a Si3N4 ceramic substrate 10 with a content of 96% or more. The silicon nitride ceramic substrate has the advantages that: has a low coefficient of thermal expansion of 3.1 (1/K10) -6 ) About 1/3 of alumina ceramic substrate, because of its low thermal expansion coefficient, the silicon nitride ceramic substrate 10 is not easy to deform and cavity when combined with the conducting strip 30, which is beneficial to improving the reliability of the product.
In addition, the silicon nitride material has better wear resistance and acid-base corrosion resistance, for example, the wear resistance of the silicon nitride material is 3 times of that of a common aluminum oxide material, and the wear resistance is good. The silicon nitride ceramic substrate is not easily corroded to change in an acid environment, and is beneficial to prolonging the service life of the thermoelectric refrigerator 100.
The silicon nitride substrate has high thermal conductivity, and for example, the thermal conductivity of the silicon nitride substrate is about 4 times that of the alumina ceramic substrate, which is 80W/(m · k). Thus, when the thermoelectric refrigerator 100 works, heat can be rapidly conducted out, so that the working efficiency of the thermoelectric refrigerator 100 is improved;
in order to improve the reliability of the connection between the conducting strip 30 and the semiconductor crystal 20, optionally, in an embodiment of the present invention, the welding manner adopted between the conducting strip 30 and the semiconductor crystal 20 may be active metal brazing, that is, the active metal brazing technique is adopted to weld the conducting strip 30 and the semiconductor crystal 20.
At present, the main material of the ceramic substrate 10 is 96% of alumina (Al2O3), and the ceramic substrate is bonded to the metal conducting strip 30 through a sintering process, and the substrate formed by the material and the process is easy to generate a cavity at the bonding interface of metal and alumina, and can be heated or cooled when a thermoelectric device works, so that the metal and the alumina are separated under a long-time cold and heat impact mode, and the refrigerating piece fails.
And by adopting the AMB technology, the AgCu solder containing active elements Ti and Zr wets and reacts at the interface of the ceramic and the metal at the high temperature of about 800 ℃, so that the heterogeneous bonding of the ceramic and the metal is realized, and the bonding strength is higher and the reliability is better.
It is right to the utility model provides a thermoelectric refrigerator 100 carries out shock-resistant test and discovers, compares in the thermoelectric refrigerator 100 who adopts the Al2O3 ceramic substrate that forms through sintering process, the utility model provides an adopt thermoelectric refrigerator 100 of Si3N4 ceramic substrate that AMB technology formed to come cold and hot impact's ability fine. For example, based on the general Specification of the thermoelectric refrigeration component of SJ-T10135-2010TEC1 series, the test conditions of 30min of temperature maintenance and 2min of switching time are respectively carried out at the temperature of-40 ℃ and 85 ℃. The number of cycles of thermal shock resistance of the thermoelectric refrigerator 100 of the Al2O3 ceramic substrate formed by the sintering process was 1000. And the number of thermal shock resistant cycles of thermoelectric refrigerator 100 using Si3N4 ceramic substrate formed by AMB process was 3500. It can be seen that the utility model provides a thermoelectric cooler 100 is good in reliability of operation and life.
In order to facilitate the welding between the semiconductor crystal 20 and the conducting plate 30 and avoid the metal ions entering the semiconductor crystal 20 from affecting the working performance of the semiconductor crystal 20, in one embodiment of the present invention, a metal film may be plated on the semiconductor crystal 20 and the conducting plate 30, respectively, for example, a layer of Ni, Au, etc. may be plated on the semiconductor crystal 20 and the conducting plate 30.
Alternatively, the thickness of the silicon nitride ceramic substrate may be 0.25mm to 2.0 mm.
Alternatively, the conductive sheet 30 may be a metal conductive sheet 30, and the material of the metal conductive sheet 30 may be Cu, Al, Au, Ag, etc., and the thickness may be 0.05mm to 0.5 mm.
Optionally, the surface of the conductive sheet 30 is plated with a metal layer of Ni, Sn, Au or an alloy thereof; the thickness of the plating layer can be 0.1um-5 um.
Alternatively, the material of the semiconductor crystal 20 may be bismuth telluride Bi2Te3, PbTe, CoSb3, SiGe.
Alternatively, the semiconductor die may be rectangular, square, regular hexagonal, or cylindrical in shape.
Alternatively, the semiconductor die may have a length dimension of 0.5-5 mm.
Alternatively, the surface plating layer of the semiconductor crystal 20 (crystal grain) may be an active metal such as Ni, Au, or an alloy thereof, and the plating layer may have a thickness of 2 to 5 um.
Alternatively, the solder paste connecting the semiconductor crystal grain and the conductive sheet 30 is SnAgCu type, SnAg type, SnCu type, SnAgSb type, SnSb type.
Optionally, the sealant 50 (see fig. 6) used for sealing the gap between the two ceramic substrates 10 of the present invention may be 703, 704 silicone rubber, epoxy resin, polypropylene or equivalent substitute products.
Alternatively, a metal layer may be plated on the conductive sheet 30 by PVD plating;
alternatively, both sides of the semiconductor crystal 20 may be plated with metal layers by PVD plating;
alternatively, when the semiconductor crystal 20 (die) is cut, the wafer may be cut into dies by dicing;
alternatively, the semiconductor crystal 20 may be affixed to the printed solder paste by hand, die bonding, or SMT.
Alternatively, solder reflow may be used to reflow and cure the solder paste of the attached semiconductor die.
The following briefly introduces a method for manufacturing the thermoelectric refrigerator 100 according to the present invention, which comprises the following steps:
step 1: and (5) manufacturing a substrate. The surface of the ceramic substrate 10 is etched using a 96% or more Si3N4 ceramic substrate, thereby forming the accommodation groove 12. The thickness of the ceramic substrate 10 may be 0.5mm, and the length and the width of the accommodating groove 12 may be 1.2mm and 3mm, respectively; the depth is 0.35 mm;
step 2: and cutting the copper sheet by using more than 99% of oxygen-free copper to form the conducting sheet 30 with the size corresponding to the size of the accommodating groove 12. Wherein, the thickness of the conducting strip 30 can be 0.3mm, and the length and width can be 1.15mm and 2.95mm respectively;
and step 3: combining the Si3N4 substrate with the etching groove with the metal conducting strip 30 through an AMB process to form a ceramic substrate 10 of the thermoelectric refrigerator;
and 4, step 4: and plating a metal layer on the substrate. Plating a metal layer on the surface of the metal conducting strip 30 by adopting a PVD method, wherein the surface of the metal layer is plated with a Ni layer and an Au layer respectively, the thickness of the Ni layer can be 3um, and the thickness of the Au layer can be 0.2 um;
and 5: and (6) cutting the wafer. Respectively cutting the N-type bismuth telluride crystal bar and the P-type bismuth telluride crystal bar into a P-type semiconductor wafer and an N-type semiconductor wafer, wherein the cutting thickness can be 1.5 mm;
step 6: and plating a metal layer on the wafer. Respectively plating a Ni layer and an Au layer on the surface of the conducting strip 30 by adopting a PVD method, wherein the thickness of the Ni layer can be 3um, and the thickness of the Au layer can be 0.2 um;
and 7: cutting the crystal (crystal grain), cutting the gold-plated semiconductor wafer into semiconductor crystals with consistent specifications, wherein the size of the semiconductor crystal is 1.0mm x 1.0 mm;
and 8: and (7) printing solder paste. Solder paste is printed on the ceramic substrate 10 according to the designed specification. Wherein the temperature of the tin paste is SnSb (melting point 235 ℃);
and step 9: and (3) pasting. Welding the cut N-type semiconductor crystal 22 and P-type semiconductor crystal to the ceramic substrate 10, wherein the mounting mode can be a die bonding or SMT (surface mount technology) patch mode, and the arrangement of crystal grains ensures that the flowing direction of current is as follows according to the design of a circuit on the ceramic substrate 10: n-type … P-type … N-type … P-type … alternating arrangement. The number of N-type semiconductor crystals 22 and P-type semiconductor crystals 21 is kept 1: 1;
step 10: and (7) reflow soldering. Reflow soldering is carried out on the ceramic substrate 10 on which the semiconductor crystal 20 is mounted, so that solder paste on the ceramic substrate 10 is solidified and formed, and the assembly of the ceramic substrate 10 of the product is completed;
step 11: and (7) welding wires. Wire bonding is performed on the ceramic substrate 10 to prepare the lead pins 40. Thus, a thermoelectric refrigerator 100 is manufactured, in which the ceramic substrate 10 in conduction with the positive electrode is a hot surface and the ceramic substrate 10 in conduction with the negative electrode is a cold surface;
step 12: sealing glue, 704 silicon rubber is adopted as the sealing glue 50 to seal the periphery of the thermoelectric refrigerator 100, so that the dustproof and waterproof protection effects are achieved.
The preferred embodiments of the present invention have been described in detail with reference to the accompanying drawings, however, the present invention is not limited to the details of the above embodiments, and the technical concept of the present invention can be within the scope of the present invention to perform various simple modifications to the technical solution of the present invention, and these simple modifications all belong to the protection scope of the present invention.
It should be noted that the various technical features described in the above embodiments can be combined in any suitable manner without contradiction, and in order to avoid unnecessary repetition, the present invention does not need to describe any combination of the features.
In addition, various embodiments of the present invention can be combined arbitrarily, and the disclosed content should be regarded as the present invention as long as it does not violate the idea of the present invention.
Claims (10)
1. A thermoelectric refrigerator is characterized by comprising two ceramic substrates, a semiconductor crystal and a conducting strip which are oppositely arranged, wherein the conducting strip and the semiconductor crystal are positioned between the two ceramic substrates, and the semiconductor crystal is electrically connected with the conducting strip;
the first surface of the ceramic substrate facing the semiconductor crystal is provided with an accommodating groove, the conducting sheet is accommodated in the accommodating groove, and the thickness of the conducting sheet is smaller than the depth of the accommodating groove.
2. A thermoelectric refrigerator according to claim 1, wherein the first face is spaced from the second face of the conductive sheet facing the semiconductor crystal by a distance of 0.05-0.1 mm.
3. The thermoelectric refrigerator according to claim 1, wherein a gap is provided between a side surface of the conductive sheet and a side surface of the accommodating groove.
4. A thermoelectric refrigerator according to any one of claims 1 to 3, wherein the projection of the electrically conductive sheet on the ceramic substrate is an irregularly shaped polygon.
5. The thermoelectric refrigerator according to claim 4, wherein the projection of the conductive sheet on the ceramic substrate is I-shaped.
6. A thermoelectric refrigerator according to any of claims 1-3, characterized in that the second face of the electrically conductive sheet facing the semiconductor crystal is provided with holes.
7. The thermoelectric refrigerator of claim 6, wherein said holes are plural in number, and are spaced apart and evenly distributed across said second face.
8. A thermoelectric refrigerator according to any of claims 1-3, wherein the ceramic substrate is a silicon nitride ceramic substrate.
9. A thermoelectric refrigerator according to any of claims 1-3, characterized in that the welding between the conducting strips and the semiconductor crystal is active metal brazing.
10. An electronic device comprising a thermoelectric refrigerator according to any one of claims 1 to 9.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202221236695.XU CN217387204U (en) | 2022-05-19 | 2022-05-19 | Thermoelectric refrigerator and electronic apparatus |
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| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202221236695.XU CN217387204U (en) | 2022-05-19 | 2022-05-19 | Thermoelectric refrigerator and electronic apparatus |
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| Publication Number | Publication Date |
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| CN217387204U true CN217387204U (en) | 2022-09-06 |
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| CN202221236695.XU Active CN217387204U (en) | 2022-05-19 | 2022-05-19 | Thermoelectric refrigerator and electronic apparatus |
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Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN107514833A (en) * | 2017-09-05 | 2017-12-26 | 北京冠洁超能新能源科技有限公司 | A kind of attachment structure of semiconductor chilling plate |
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2022
- 2022-05-19 CN CN202221236695.XU patent/CN217387204U/en active Active
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN107514833A (en) * | 2017-09-05 | 2017-12-26 | 北京冠洁超能新能源科技有限公司 | A kind of attachment structure of semiconductor chilling plate |
| CN107514833B (en) * | 2017-09-05 | 2023-05-23 | 北京冠洁超能新能源科技有限公司 | Connection structure of semiconductor refrigeration piece |
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