CN217541126U - Semiconductor refrigerating sheet capable of reducing thermal stress influence - Google Patents
Semiconductor refrigerating sheet capable of reducing thermal stress influence Download PDFInfo
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- CN217541126U CN217541126U CN202221093219.7U CN202221093219U CN217541126U CN 217541126 U CN217541126 U CN 217541126U CN 202221093219 U CN202221093219 U CN 202221093219U CN 217541126 U CN217541126 U CN 217541126U
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- base plate
- supporting
- crystal grains
- conductive
- plate
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- 239000004065 semiconductor Substances 0.000 title claims abstract description 33
- 230000008646 thermal stress Effects 0.000 title claims abstract description 24
- 238000005057 refrigeration Methods 0.000 claims abstract description 19
- 239000013078 crystal Substances 0.000 claims description 40
- 239000000758 substrate Substances 0.000 claims description 31
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 claims description 4
- 239000000919 ceramic Substances 0.000 claims description 4
- 229910052802 copper Inorganic materials 0.000 claims description 4
- 239000010949 copper Substances 0.000 claims description 4
- 239000004020 conductor Substances 0.000 abstract description 5
- 230000000694 effects Effects 0.000 description 8
- 238000000034 method Methods 0.000 description 8
- 238000010586 diagram Methods 0.000 description 5
- 239000000463 material Substances 0.000 description 2
- 238000012986 modification Methods 0.000 description 2
- 230000004048 modification Effects 0.000 description 2
- 230000000452 restraining effect Effects 0.000 description 2
- 241001391944 Commicarpus scandens Species 0.000 description 1
- 230000005679 Peltier effect Effects 0.000 description 1
- ATJFFYVFTNAWJD-UHFFFAOYSA-N Tin Chemical compound [Sn] ATJFFYVFTNAWJD-UHFFFAOYSA-N 0.000 description 1
- 230000009286 beneficial effect Effects 0.000 description 1
- 238000001816 cooling Methods 0.000 description 1
- 238000002474 experimental method Methods 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- 238000011056 performance test Methods 0.000 description 1
- 238000005476 soldering Methods 0.000 description 1
- 238000012360 testing method Methods 0.000 description 1
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- Cooling Or The Like Of Semiconductors Or Solid State Devices (AREA)
Abstract
The utility model relates to a semiconductor refrigeration piece field discloses a reduce semiconductor refrigeration piece of thermal stress influence, including first base plate, the second base plate, conductor wire and a plurality of crystalline grain, first base plate and second base plate set up relatively, in a plurality of crystalline grains of array distribution, the crystalline grain on the corner of keeping away from the conductor wire is for supporting the crystalline grain, all the other crystalline grains are electrically conductive crystalline grain, all be equipped with on first base plate and the second base plate and lead the corresponding conducting strip of crystalline grain with every row, the crystalline grain in the same row passes through the conducting strip and establishes ties each other, be equipped with electrically conductive connection piece on first base plate and the second base plate, the both ends of two adjacent crystalline grains are established ties each other through electrically conductive connection piece, first base plate and second base plate all are equipped with the support guide piece with the corresponding department of support crystalline grain position, the both ends face that supports the crystalline grain welds with the support guide piece mutually, the utility model discloses in, the support crystalline grain of corner does not participate in circuit connection, avoid because thermal stress is too big and refrigeration piece takes place cracked condition, improve the life of refrigeration piece.
Description
Technical Field
The utility model relates to a semiconductor refrigeration piece field, especially a semiconductor refrigeration piece that reduces thermal stress influence.
Background
Semiconductor refrigeration, also known as thermoelectric refrigeration, is the application of the peltier effect in refrigeration. In recent years, the manufacturing technology of semiconductor refrigerating sheets is continuously improved, and the semiconductor refrigerating sheets have been widely applied in the fields of aerospace, electronic equipment cooling, space experiment technology, bioengineering and the like. The semiconductor refrigerating sheet consists of a ceramic substrate, conductive copper, crystal grains and soldering tin, and the expansion coefficients of different materials are different, so that the semiconductor refrigerating sheet has very large thermal stress in the long-period use and performance test process. The semiconductor refrigerating sheet is exposed in severe working environments such as continuous high temperature, cold and heat impact circulation and the like in the service process, so that the refrigerating sheet needs to bear the circulating temperature load and the effect of the circulating thermal stress load caused by the circulating temperature load. The interface joint of different materials can generate great thermal stress, and the long-period cycle test leads the refrigerating sheet to finally deform or even break and fail.
SUMMERY OF THE UTILITY MODEL
Therefore, a semiconductor refrigeration piece capable of reducing the influence of thermal stress is needed to be provided, and the problem that the existing semiconductor refrigeration piece is easy to break due to overlarge thermal stress is solved.
In order to achieve the above object, the utility model provides a reduce semiconductor refrigeration piece of thermal stress influence, including first base plate, second base plate, conductor wire and a plurality of crystalline grain, first base plate is connected with the conductor wire, first base plate and second base plate set up relatively, and the crystalline grain is array distribution between second base plate and first base plate, and among a plurality of crystalline grains of array distribution, the crystalline grain on the corner of keeping away from the conductor wire is for supporting the crystalline grain, and all the other crystalline grains are electrically conductive crystalline grains, all be equipped with on first base plate and the second base plate and lead the corresponding conducting strip of crystalline grain with every row, the crystalline grain in the same row passes through the conducting strip and establishes ties each other, be equipped with electrically conductive connection piece on first base plate and the second base plate, the both ends face that two adjacent rows of crystalline grains are established ties each other through electrically conductive connection piece, first base plate and second base plate all are equipped with the support guide vane with the corresponding department of support crystalline grain position, the both ends face that supports the crystalline grain welds with the support guide vane mutually.
Furthermore, two supporting crystal grains are arranged on the corner far away from the conducting wire in the plurality of crystal grains distributed in the array. The two supporting crystal grains are arranged on the corners, so that the constraint effect of the corners of the refrigerating sheet is reduced, and the thermal stress deformation of the refrigerating sheet is reduced.
Further, the supporting guide vane is connected with two adjacent supporting crystal grains. The supporting guide sheet is connected with the two adjacent supporting crystal grains, the two crystal grains adjacent to the corners are prevented from restraining the refrigerating sheet, and the thermal stress deformation of the refrigerating sheet is further reduced.
Furthermore, the number of the supporting crystal grains is two, and the two supporting crystal grains are respectively positioned at two ends of the side edge far away from the conducting wire.
Furthermore, insulating layers are arranged on two end faces of the supporting crystal grains, the supporting guide sheet on the second substrate and the adjacent connecting sheet are of an integral structure to form an L-shaped guide sheet, the insulating layers are connected with the L-shaped guide sheet, and the supporting guide sheet on the first substrate corresponds to the supporting crystal grains. The insulating layer makes the supporting crystal grains and the L-shaped guide sheet non-conductive and only plays a supporting role.
Furthermore, the first substrate and the second substrate are both ceramic plates, and the conducting strips, the connecting sheets and the supporting conducting strips are all copper sheets.
The technical scheme has the following beneficial effects:
the utility model discloses in, the support crystalline grain that is located the corner does not participate in circuit connection with the support guide plate, supports the crystalline grain and only plays the supporting role, has reduced the constraint effect of semiconductor refrigeration piece, and the effectual thermal stress effect that has reduced semiconductor refrigeration piece corner has avoided thermal stress too big, causes the adjacent crystalline grain of corner to warp or cracked problem, has improved the life of semiconductor.
Drawings
Fig. 1 is a structural diagram of a semiconductor chilling plate according to embodiment 1.
Fig. 2 is a side view of the semiconductor chilling plate according to embodiment 1.
Fig. 3 is a conductive sheet distribution diagram on a second substrate according to embodiment 1.
Fig. 4 is a structural diagram of a first substrate and a grain distribution according to example 1.
Fig. 5 is a conductive sheet distribution diagram of the first substrate according to embodiment 1.
Fig. 6 is a structural diagram of an inner corner of the semiconductor chilling plate according to embodiment 2.
Fig. 7 is a side view of the inner corners of the semiconductor chilling plates according to embodiment 2.
Description of the reference numerals:
1. a first substrate; 2. a second substrate; 3. a conductive wire; 4. a conductive grain; 5. supporting the crystal grains; 6. a conductive sheet; 7. a conductive connecting sheet; 8. supporting the guide plate; 9. an insulating layer; 10. an L-shaped guide sheet.
Detailed Description
To explain technical contents, structural features, and objects and effects of the technical solutions in detail, the following detailed description is given with reference to the accompanying drawings in conjunction with the embodiments.
Example 1
Referring to fig. 1-5, the present embodiment provides a semiconductor refrigeration chip for reducing thermal stress influence, including a first substrate 1, a second substrate 2, a conductive line 3 and a plurality of crystal grains, wherein the first substrate 1 is connected to the conductive line 3, the first substrate 1 and the second substrate 2 are disposed opposite to each other, the crystal grains are distributed between the second substrate 2 and the first substrate 1 in an array, among the plurality of crystal grains distributed in an array, the crystal grains on the corner far away from the conductive line 3 are supporting crystal grains 5, the rest of the crystal grains are conductive crystal grains 4, the first substrate 1 and the second substrate 2 are both provided with conductive sheets 6 corresponding to each row of the conductive crystal grains, the crystal grains in the same row are connected in series with each other through the conductive sheets 6, the first substrate 1 and the second substrate 2 are provided with conductive connection sheets 7, two ends of adjacent crystal grains are connected in series with each other through the conductive connection sheets 7, the positions of the first substrate 1 and the second substrate 2 corresponding to the supporting crystal grains 5 are both provided with supporting guide sheets 8, and two end surfaces of the supporting crystal grains 5 are welded to the supporting guide sheets 8.
Among the plurality of dies distributed in an array, two supporting dies 5 are arranged on the corners far away from the conductive wire 3. The support guide 8 connects two adjacent support dies 5. The two supporting crystal grains are arranged on the corner, so that the constraint effect of the corner of the refrigerating sheet is reduced, and the thermal stress deformation of the refrigerating sheet is reduced. The supporting guide sheet 8 is connected with the two adjacent supporting crystal grains 5, the two crystal grains adjacent to the corners are prevented from restraining the refrigerating sheet, and the thermal stress deformation of the refrigerating sheet is further reduced.
In this embodiment, the first substrate 1 and the second substrate 2 are ceramic plates, and the conductive sheet 6, the connecting sheet, and the supporting conductive sheet 8 are copper sheets.
Example 2
Referring to fig. 6-7, the present embodiment provides a semiconductor chilling plate for reducing thermal stress influence, which is different from embodiment 1 in that the number of the supporting dies 5 is two, and the two supporting dies 5 are respectively located at two ends of the side edge far from the conductive line 3.
Two end faces of the supporting crystal grain 5 are provided with insulating layers 9, a supporting guide vane 8 on the second substrate 2 and an adjacent connecting sheet are of an integral structure to form an L-shaped guide vane 10, the insulating layers 9 are connected with the L-shaped guide vane 10, and the supporting guide vane 8 on the first substrate 1 corresponds to the supporting crystal grain 5. The insulating layer 9 makes the supporting die 5 and the L-shaped conductive sheet 10 non-conductive and only plays a supporting role.
The utility model discloses in, the support crystalline grain 5 that is located the corner does not participate in circuit connection with support guide 8, supports the crystalline grain and only plays the supporting role, has reduced the constraint effect of semiconductor refrigeration piece, and the effectual thermal stress effect that has reduced semiconductor refrigeration piece corner has avoided thermal stress too big, causes the adjacent crystalline grain of corner to warp or cracked problem, has improved the life of semiconductor.
It is noted that, herein, relational terms such as first and second, and the like may be used solely to distinguish one entity or action from another entity or action without necessarily requiring or implying any actual such relationship or order between such entities or actions. Also, the terms "include", "including" or any other variations thereof are intended to cover non-exclusive inclusion, so that a process, method, article, or terminal device including a series of elements includes not only those elements but also other elements not explicitly listed or inherent to such process, method, article, or terminal device. Without further limitation, an element defined by the phrases "comprising … …" or "comprising … …" does not exclude the presence of additional elements in a process, method, article, or terminal that comprises the element. Further, herein, "greater than," "less than," "more than," and the like are understood to exclude the present numbers; the terms "above", "below", "within" and the like are to be understood as including the number.
Although the embodiments have been described, once the basic inventive concept is known, other changes and modifications can be made to the embodiments by those skilled in the art, so that the above embodiments are only examples of the present invention, and not intended to limit the scope of the present invention, and all the modifications of the equivalent structure or equivalent flow path using the contents of the specification and the drawings of the present invention, or directly or indirectly using other related technical fields are also included in the scope of the present invention.
Claims (6)
1. A semiconductor refrigeration piece capable of reducing the influence of thermal stress is characterized by comprising a first base plate, a second base plate, a conductive wire and a plurality of crystal grains, wherein the first base plate is connected with the conductive wire, the first base plate and the second base plate are oppositely arranged, the crystal grains are distributed between the second base plate and the first base plate in an array mode, the crystal grains on corners far away from the conductive wire are supporting crystal grains, the rest crystal grains are conductive crystal grains, the first base plate and the second base plate are respectively provided with a conductive sheet corresponding to each row of the conductive crystal grains, the crystal grains in the same row are mutually connected in series through the conductive sheets, the first base plate and the second base plate are provided with conductive connecting sheets, two ends of two adjacent rows of the crystal grains are mutually connected in series through the conductive connecting sheets, supporting guide sheets are respectively arranged at positions, corresponding to the positions of the first base plate and the second base plate, and two end faces of the supporting crystal grains are welded with the supporting guide sheets.
2. The semiconductor chilling plate for reducing thermal stress according to claim 1, wherein two supporting dies are disposed on the corners far away from the conductive wire among the plurality of dies distributed in an array.
3. The semiconductor chilling plate according to claim 2, wherein the support guiding plate connects two adjacent support dies.
4. The semiconductor chilling plate according to claim 1, wherein the number of the supporting dies is two, and the two supporting dies are respectively located at two ends of the side edge far away from the conductive line.
5. The semiconductor chilling plate according to claim 4, wherein two end faces of the supporting die are provided with an insulating layer, the supporting guide plate on the second substrate and the adjacent connecting plate are integrated to form an L-shaped guide plate, the insulating layer is connected to the L-shaped guide plate, and the supporting guide plate on the first substrate corresponds to the supporting die.
6. The semiconductor refrigeration chip for reducing the influence of thermal stress as claimed in claim 1, wherein the first substrate and the second substrate are ceramic plates, and the conductive sheet, the connecting sheet and the supporting guide sheet are copper sheets.
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
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CN202221093219.7U CN217541126U (en) | 2022-05-09 | 2022-05-09 | Semiconductor refrigerating sheet capable of reducing thermal stress influence |
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CN202221093219.7U CN217541126U (en) | 2022-05-09 | 2022-05-09 | Semiconductor refrigerating sheet capable of reducing thermal stress influence |
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CN217541126U true CN217541126U (en) | 2022-10-04 |
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CN202221093219.7U Active CN217541126U (en) | 2022-05-09 | 2022-05-09 | Semiconductor refrigerating sheet capable of reducing thermal stress influence |
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2022
- 2022-05-09 CN CN202221093219.7U patent/CN217541126U/en active Active
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Denomination of utility model: A Semiconductor Refrigeration Chip for Reducing the Influence of Thermal Stress Granted publication date: 20221004 Pledgee: Agricultural Bank of China Limited Xiamen Lianqian Branch Pledgor: P&N TECHNOLOGY (XIAMEN) CO.,LTD. Registration number: Y2024980003573 |