CN220135767U - Semiconductor refrigerator and semiconductor refrigerator production system - Google Patents
Semiconductor refrigerator and semiconductor refrigerator production system Download PDFInfo
- Publication number
- CN220135767U CN220135767U CN202321563136.4U CN202321563136U CN220135767U CN 220135767 U CN220135767 U CN 220135767U CN 202321563136 U CN202321563136 U CN 202321563136U CN 220135767 U CN220135767 U CN 220135767U
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- CN
- China
- Prior art keywords
- ceramic substrate
- semiconductor refrigerator
- laser
- guide vane
- production system
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- 239000004065 semiconductor Substances 0.000 title claims abstract description 55
- 238000004519 manufacturing process Methods 0.000 title claims abstract description 13
- 239000000758 substrate Substances 0.000 claims abstract description 108
- 239000000919 ceramic Substances 0.000 claims abstract description 97
- 239000013078 crystal Substances 0.000 claims abstract description 38
- 229910052797 bismuth Inorganic materials 0.000 claims description 10
- JCXGWMGPZLAOME-UHFFFAOYSA-N bismuth atom Chemical compound [Bi] JCXGWMGPZLAOME-UHFFFAOYSA-N 0.000 claims description 10
- XSOKHXFFCGXDJZ-UHFFFAOYSA-N telluride(2-) Chemical compound [Te-2] XSOKHXFFCGXDJZ-UHFFFAOYSA-N 0.000 claims description 8
- 238000009713 electroplating Methods 0.000 claims description 4
- 239000012528 membrane Substances 0.000 claims description 4
- 229910000679 solder Inorganic materials 0.000 claims description 4
- YOCUPQPZWBBYIX-UHFFFAOYSA-N copper nickel Chemical compound [Ni].[Cu] YOCUPQPZWBBYIX-UHFFFAOYSA-N 0.000 claims description 3
- PMHQVHHXPFUNSP-UHFFFAOYSA-M copper(1+);methylsulfanylmethane;bromide Chemical compound Br[Cu].CSC PMHQVHHXPFUNSP-UHFFFAOYSA-M 0.000 claims description 3
- CLDVQCMGOSGNIW-UHFFFAOYSA-N nickel tin Chemical compound [Ni].[Sn] CLDVQCMGOSGNIW-UHFFFAOYSA-N 0.000 claims description 3
- HBMJWWWQQXIZIP-UHFFFAOYSA-N silicon carbide Chemical compound [Si+]#[C-] HBMJWWWQQXIZIP-UHFFFAOYSA-N 0.000 claims description 3
- 229910010271 silicon carbide Inorganic materials 0.000 claims description 3
- 238000005520 cutting process Methods 0.000 claims description 2
- TWNQGVIAIRXVLR-UHFFFAOYSA-N oxo(oxoalumanyloxy)alumane Chemical compound O=[Al]O[Al]=O TWNQGVIAIRXVLR-UHFFFAOYSA-N 0.000 claims 1
- 238000009434 installation Methods 0.000 abstract description 4
- 238000005057 refrigeration Methods 0.000 abstract description 2
- 238000005507 spraying Methods 0.000 description 8
- 238000000034 method Methods 0.000 description 7
- PXHVJJICTQNCMI-UHFFFAOYSA-N Nickel Chemical compound [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 description 4
- 229910052751 metal Inorganic materials 0.000 description 3
- 239000002184 metal Substances 0.000 description 3
- 238000004806 packaging method and process Methods 0.000 description 3
- 238000007711 solidification Methods 0.000 description 3
- 230000008023 solidification Effects 0.000 description 3
- 229910045601 alloy Inorganic materials 0.000 description 2
- 239000000956 alloy Substances 0.000 description 2
- PNEYBMLMFCGWSK-UHFFFAOYSA-N aluminium oxide Inorganic materials [O-2].[O-2].[O-2].[Al+3].[Al+3] PNEYBMLMFCGWSK-UHFFFAOYSA-N 0.000 description 2
- 238000001816 cooling Methods 0.000 description 2
- 239000000463 material Substances 0.000 description 2
- 229910052759 nickel Inorganic materials 0.000 description 2
- 238000005245 sintering Methods 0.000 description 2
- 238000005476 soldering Methods 0.000 description 2
- 229910052714 tellurium Inorganic materials 0.000 description 2
- PORWMNRCUJJQNO-UHFFFAOYSA-N tellurium atom Chemical compound [Te] PORWMNRCUJJQNO-UHFFFAOYSA-N 0.000 description 2
- 235000012431 wafers Nutrition 0.000 description 2
- 238000003466 welding Methods 0.000 description 2
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 1
- 238000003723 Smelting Methods 0.000 description 1
- ATJFFYVFTNAWJD-UHFFFAOYSA-N Tin Chemical compound [Sn] ATJFFYVFTNAWJD-UHFFFAOYSA-N 0.000 description 1
- 230000009286 beneficial effect Effects 0.000 description 1
- 238000004891 communication Methods 0.000 description 1
- 239000004020 conductor Substances 0.000 description 1
- 229910052802 copper Inorganic materials 0.000 description 1
- 239000010949 copper Substances 0.000 description 1
- 238000007731 hot pressing Methods 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 238000007650 screen-printing Methods 0.000 description 1
- 239000007921 spray Substances 0.000 description 1
- 238000010998 test method Methods 0.000 description 1
- 230000005676 thermoelectric effect Effects 0.000 description 1
- 229910052718 tin Inorganic materials 0.000 description 1
- 239000011135 tin Substances 0.000 description 1
- 238000004857 zone melting Methods 0.000 description 1
Landscapes
- Cooling Or The Like Of Semiconductors Or Solid State Devices (AREA)
Abstract
The utility model relates to the technical field of semiconductor refrigeration, and discloses a semiconductor refrigerator and a semiconductor refrigerator production system, wherein the semiconductor refrigerator comprises: the device comprises a first ceramic substrate, a second ceramic substrate, crystal grains and a guide vane; the top surface of the first ceramic substrate is provided with a crystal grain installation area and a blank area; the die is disposed on the die mounting region; the second ceramic substrate is arranged on the crystal grain; the guide vane is fixed on the blank area and used for laser coding. Through setting up the guide vane that is used for laser to beat the sign indicating number on first ceramic substrate for trace back the sign indicating number and can be carved on the guide vane through the radium-shine mode of laser, be difficult for covering because of second ceramic substrate upper surface is covered, can not produce gas along with the growth of live time simultaneously, effectively solve current semiconductor refrigerator trace back inconvenient and along with the problem of the easy release gas of live time growth.
Description
Technical Field
The utility model relates to the technical field of semiconductor refrigeration, in particular to a semiconductor refrigerator and a semiconductor refrigerator production system.
Background
The semiconductor refrigerator (Thermoelectric cooler) is a device for producing cold by using the thermo-electric effect of a semiconductor, specifically, two substrates are connected by a conductor, after direct current is turned on, the temperature at the junction of one substrate is reduced, and the temperature at the junction of the other substrate is increased.
The tracing mode of the existing semiconductor refrigerator is to spray codes on the outer surface of the product; when the product is installed and used, the code spraying is easy to cover, so that the product is inconvenient to trace. Meanwhile, when the semiconductor refrigerator is used for infrared metal packaging, material deflation needs to be controlled, and the code spraying on the surface of the semiconductor refrigerator is generally ink spraying, so that the code spraying is easy to release gas along with the increase of the service time, and the vacuum degree of the infrared metal packaging cavity is influenced to reduce the response rate of the infrared metal packaging cavity.
Disclosure of Invention
In view of the above, the present utility model is to provide a semiconductor refrigerator and a semiconductor refrigerator production system for solving the problems of inconvenient tracing and easy gas release with the increase of the service time of the existing semiconductor refrigerator.
To achieve the above object, a first aspect of the present utility model provides a semiconductor refrigerator, comprising: the device comprises a first ceramic substrate, a second ceramic substrate, crystal grains and a guide vane;
the top surface of the first ceramic substrate is provided with a crystal grain installation area and a blank area;
the die is disposed on the die mounting region;
the second ceramic substrate is arranged on the crystal grain;
the guide vane is fixed on the blank area and used for laser coding.
Further, the die mounting area is covered with solder paste.
Further, the crystal grain is bismuth telluride crystal grain.
Further, electrode wires are welded on the first ceramic substrate.
Further, the second ceramic substrate is smaller in size than the first ceramic substrate such that a projection of the first ceramic substrate along a vertical plane covers a projection of the second ceramic substrate along a vertical plane.
Further, the first ceramic substrate and the second ceramic substrate are alumina substrate, aluminum nitride substrate or silicon carbide SIC substrate.
A second aspect of the present utility model provides a semiconductor refrigerator production system comprising: a laser table and a semiconductor refrigerator as described in any one of the above;
the laser table is provided with a carrier plate and a laser;
the carrier plate is provided with a laser station;
the first ceramic substrate of the semiconductor refrigerator is arranged on the carrier plate, and a blank area of the first ceramic substrate is positioned on the laser station;
the laser device faces the laser station.
Further, the method further comprises the following steps: a cutter;
the cutter is used for cutting the bismuth telluride crystal bar to form crystal grains of the semiconductor refrigerator.
Further, the method further comprises the following steps: an electroplate device;
the electroplate device is used for electroplating nickel copper or nickel tin with preset thickness on the cut crystal grain.
Further, the method further comprises the following steps: a film combining device;
the membrane combiner is used for carrying out membrane pressure on the second ceramic substrate Shi Jiage after the second ceramic substrate is placed on the crystal grains.
From the above technical solution, the present utility model provides a semiconductor refrigerator and a semiconductor refrigerator production system, the semiconductor refrigerator comprising: the device comprises a first ceramic substrate, a second ceramic substrate, crystal grains and a guide vane; the top surface of the first ceramic substrate is provided with a crystal grain installation area and a blank area; the die is disposed on the die mounting region; the second ceramic substrate is arranged on the crystal grain; the guide vane is fixed on the blank area and used for laser coding.
Through setting up the guide vane that is used for laser to beat the sign indicating number on first ceramic substrate for trace back the sign indicating number and can be carved on the guide vane through the radium-shine mode of laser, be difficult for covering because of second ceramic substrate upper surface is covered, can not produce gas along with the growth of live time simultaneously, effectively solve current semiconductor refrigerator trace back inconvenient and along with the problem of the easy release gas of live time growth.
Drawings
In order to more clearly illustrate the embodiments of the utility model or the technical solutions of the prior art, the drawings which are used in the description of the embodiments or the prior art will be briefly described, it being obvious that the drawings in the description below are only some embodiments of the utility model, and that other drawings can be obtained from these drawings without inventive faculty for a person skilled in the art.
Fig. 1 is a side view of a semiconductor refrigerator according to an embodiment of the present utility model;
fig. 2 is a top view of a first ceramic substrate of a semiconductor refrigerator according to an embodiment of the present utility model;
fig. 3 is a bottom view of a semiconductor refrigerator according to an embodiment of the present utility model;
fig. 4 is a side view of a semiconductor refrigerator according to an embodiment of the present utility model after electrode wires are soldered to a first ceramic substrate;
in the figure: 1. a first ceramic substrate; 2. a second ceramic substrate; 3. a crystal grain; 4. a deflector; 5. an electrode wire; 11. a die mounting area; 12. blank area.
Detailed Description
The following description of the embodiments of the present utility model will be made clearly and fully with reference to the accompanying drawings, in which it is evident that the embodiments described are some, but not all embodiments of the utility model. All other embodiments, which can be made by those skilled in the art based on the embodiments disclosed in the specification without making any inventive effort, are intended to be within the scope of the utility model as claimed.
In the description of the embodiments of the present utility model, it should be noted that the terms "center," "upper," "lower," "left," "right," "vertical," "horizontal," "inner," "outer," and the like indicate or are based on the orientation or positional relationship shown in the drawings, merely to facilitate description of the embodiments of the present utility model and to simplify the description, and do not indicate or imply that the devices or elements referred to must have a specific orientation, be configured and operated in a specific orientation, and thus should not be construed as limiting the embodiments of the present utility model. Furthermore, the terms "first," "second," and "third" are used for descriptive purposes only and are not to be construed as indicating or implying relative importance.
In describing embodiments of the present utility model, it should be noted that, unless explicitly stated and limited otherwise, the terms "mounted," "connected," and "connected" are to be construed broadly, and may be, for example, fixedly connected, interchangeably connected, integrally connected, mechanically connected, electrically connected, directly connected, indirectly connected through an intermediary, or in communication between two elements. The specific meaning of the above terms in the embodiments of the present utility model will be understood by those of ordinary skill in the art in a specific context.
Referring to fig. 1 to 4, a first aspect of an embodiment of the present utility model provides a semiconductor refrigerator, including: the ceramic device comprises a first ceramic substrate 1, a second ceramic substrate 2, crystal grains 3 and a flow deflector 4. Wherein, the crystal grain 3 can be N/P type crystal grain; the first ceramic substrate 1 may be used as a hot-end ceramic substrate; the second ceramic substrate may be used as a cold end ceramic substrate. The first ceramic substrate 1 and the second ceramic substrate 2 may be an alumina substrate, an aluminum nitride substrate or a silicon carbide SIC substrate with high stability and high thermal conductivity.
The top surface of the first ceramic substrate 1 is provided with a die mounting region 11 and a blank region 12; the die 3 is disposed on the die mounting region 11; the second ceramic substrate 2 is arranged on the crystal grain 3; the deflector 4 is fixed on the blank area 12 for laser coding. The blank region 12 is a region on the first ceramic substrate 1 where the crystal grains 3 are not provided.
Specifically, the crystal grains 3 are sandwiched and fixed between the first ceramic substrate 1 and the second ceramic substrate 2 such that both the first ceramic substrate 1 and the second ceramic substrate 2 are disposed at intervals in the vertical direction. A plurality of fixing pieces may be disposed on the first ceramic substrate 1 in the die mounting region 11 such that the dies 3 may be fixed on the fixing pieces in one-to-one correspondence; wherein the fixing piece and the guide vane 4 can be made of the same material.
In the production process, the guide vane 4 is fixed on the blank area 12, then the tracing code is printed on the guide vane 4 through the laser equipment, then the crystal grain 3 is arranged on the crystal grain mounting area 11, and finally the second ceramic substrate 2 is fixed on the top surface of the crystal grain 3.
The top surface of the second ceramic substrate 2 is easily covered in practical use of the semiconductor refrigerator. Therefore, compared with the existing mode of spraying codes on the second ceramic substrate 2, the scheme can be used for laser equipment to perform laser coding by arranging the independent guide plates 4; the formed tracing code is not hidden by the installation of the semiconductor refrigerator, and gas is not generated with the ink spraying code.
When the second ceramic substrate 2 is a ceramic surface metalized substrate, the semiconductor refrigerator is mounted on the client side and needs to weld the second ceramic substrate 2, so that the code spraying on the second ceramic substrate 2 is difficult to trace; by adopting the mode of arranging the guide vane 4 in the scheme, the condition that the second ceramic substrate 2 covers the code spraying due to welding can be avoided.
As a further improvement, the die mounting region 11 is covered with solder paste to facilitate conductive connection of the die 3 to the first ceramic substrate 1. The solder paste may be printed on the first ceramic substrate 1 by silk-screen printing.
In application, the grains 3 may be bismuth telluride grains.
Specifically, the crystal grain 3 can be formed into a crystal rod of bismuth telluride alloy by zone melting or hot-pressing sintering after tellurium and bismuth are doped, then the crystal rod is cut into wafers with required thickness, nickel, copper or nickel and tin with required thickness are formed on the surface of the cut wafers in an electroplating mode, and finally the crystal grain 3 with required size is cut.
After the die 3 is fabricated, the die 3 may be placed on the die mounting region 11 of the first ceramic substrate 1 by a screen or DB process.
Further, electrode wires 5 are soldered on the first ceramic substrate 1.
After the die 3 is placed in the die mounting region 11, the second ceramic substrate 2 is first covered over each die 3 on the first ceramic substrate 1, then the second ceramic substrate 2 and the first ceramic substrate 1 are laminated to apply pressure to the surface of the die 3, the die 3 is pressed, and then reflow soldering and cooling solidification are performed to fix the die 3 between the second ceramic substrate 2 and the first ceramic substrate 1.
And (3) performing an internal resistance test procedure on the semiconductor refrigerator after the film combination and solidification, and welding the electrode wires 5 on the qualified components.
In one embodiment, the size of the second ceramic substrate 2 is smaller than that of the first ceramic substrate 1, so that the projection of the first ceramic substrate 1 along the vertical plane covers the projection of the second ceramic substrate 2 along the vertical plane, thereby further avoiding the second ceramic substrate 2 from covering the trace-back code, and being more beneficial to trace-back.
A second aspect of the present utility model provides a semiconductor refrigerator production system comprising: a laser table and any of the above semiconductor refrigerators; the laser table is provided with a carrier plate and a laser; a laser station is arranged on the carrier plate; the first ceramic substrate 1 of the semiconductor refrigerator is arranged on the carrier plate, and a blank area 12 of the first ceramic substrate 1 is positioned on the laser station; the laser is oriented to the laser station.
The laser can be arranged beside the carrier plate and used for carrying out laser coding on the guide vane 4 on the laser station.
In one embodiment, further comprising: a cutter; the cutter is used to cut the bismuth telluride ingot to form the grains 3 of the semiconductor refrigerator.
Specifically, tellurium and bismuth are mixed and then are subjected to zone smelting or hot-pressed sintering to form a crystal rod of bismuth telluride alloy; the cutter is used to cut the crystal bar into crystal grains 3 of a desired thickness.
The cutter can be arranged on the laser table or can be independently arranged relative to the laser table.
Further, the method further comprises the following steps: an electroplate device; the electroplate device is used for electroplating nickel copper or nickel tin with preset thickness on the cut crystal grain 3, so as to form a final finished product.
Further, the method further comprises the following steps: a film combining device; the film combiner is used for applying film-combining pressure to the second ceramic substrate 2 after the second ceramic substrate 2 is placed on the crystal grain 3.
Similarly, the electroplate device and the film combining device can be arranged on the laser table or can be independently arranged relative to the laser table.
After the die 3 is fabricated, the die 3 may be placed on the die mounting region 11 of the first ceramic substrate 1 by a screen or DB process. Then, the second ceramic substrate 2 is covered above each die 3 on the first ceramic substrate 1, the second ceramic substrate 2 and the first ceramic substrate 1 are subjected to film combination through a film combiner so as to apply pressure to the surfaces of the die 3 to compress the die 3, and then reflow soldering and cooling solidification are performed to fix the die 3 between the second ceramic substrate 2 and the first ceramic substrate 1.
While the utility model has been described in detail with reference to the examples, it will be apparent to those skilled in the art that the foregoing description of the preferred embodiments of the utility model may be modified or equivalents may be substituted for elements thereof, and that any modifications, equivalents, improvements or changes will fall within the spirit and principles of the utility model.
Claims (10)
1. A semiconductor refrigerator, comprising: the device comprises a first ceramic substrate (1), a second ceramic substrate (2), crystal grains (3) and a guide vane (4);
the top surface of the first ceramic substrate (1) is provided with a die mounting area (11) and a blank area (12);
the die (3) is disposed on the die mounting region (11);
the second ceramic substrate (2) is arranged on the crystal grain (3);
the guide vane (4) is fixed on the blank area (12) and is used for laser coding.
2. A semiconductor refrigerator according to claim 1, characterized in that the die mounting area (11) is covered with solder paste.
3. A semiconductor refrigerator according to claim 1, characterized in that the grains (3) are bismuth telluride grains.
4. A semiconductor refrigerator according to claim 1, characterized in that the first ceramic substrate (1) has electrode wires (5) soldered thereon.
5. The semiconductor refrigerator according to claim 1, characterized in that the second ceramic substrate (2) has a smaller size than the first ceramic substrate (1) such that the projection of the first ceramic substrate (1) along a vertical plane covers the projection of the second ceramic substrate (2) along a vertical plane.
6. The semiconductor refrigerator according to claim 1, wherein the first ceramic substrate (1) and the second ceramic substrate (2) are aluminum oxide substrates, aluminum nitride substrates, or silicon carbide SIC substrates.
7. A semiconductor refrigerator production system, comprising: a laser table and the semiconductor refrigerator of any one of claims 1-6;
the laser table is provided with a carrier plate and a laser;
the carrier plate is provided with a laser station;
the first ceramic substrate (1) of the semiconductor refrigerator is arranged on the carrier plate, and a blank area (12) of the first ceramic substrate (1) is positioned on the laser station;
the laser device faces the laser station.
8. The semiconductor refrigerator production system of claim 7, further comprising: a cutter;
the cutter is for cutting a bismuth telluride ingot to form grains (3) of the semiconductor refrigerator.
9. The semiconductor refrigerator production system of claim 8, further comprising: an electroplate device;
the electroplate device is used for electroplating nickel copper or nickel tin with preset thickness on the cut crystal grains (3).
10. The semiconductor refrigerator production system of claim 7, further comprising: a film combining device;
the membrane combiner is used for pressing the membrane of the second ceramic substrate (2) Shi Jiage after the second ceramic substrate (2) is placed on the crystal grains (3).
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202321563136.4U CN220135767U (en) | 2023-06-19 | 2023-06-19 | Semiconductor refrigerator and semiconductor refrigerator production system |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202321563136.4U CN220135767U (en) | 2023-06-19 | 2023-06-19 | Semiconductor refrigerator and semiconductor refrigerator production system |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN220135767U true CN220135767U (en) | 2023-12-05 |
Family
ID=88948580
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN202321563136.4U Active CN220135767U (en) | 2023-06-19 | 2023-06-19 | Semiconductor refrigerator and semiconductor refrigerator production system |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN220135767U (en) |
-
2023
- 2023-06-19 CN CN202321563136.4U patent/CN220135767U/en active Active
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