CN217116055U

CN217116055U - IGBT drive circuit with variable switch resistance

Info

Publication number: CN217116055U
Application number: CN202220742963.9U
Authority: CN
Inventors: 袁光明; 张晖; 刘毅
Original assignee: Wuxi Kewei Semiconductor Co ltd
Current assignee: Wuxi Kewei Semiconductor Co ltd
Priority date: 2022-04-01
Filing date: 2022-04-01
Publication date: 2022-08-02
Anticipated expiration: 2032-04-01

Abstract

The utility model discloses a variable switch resistance's IGBT drive circuit relates to electronic circuit technical field, and it includes first resistance R1, IGBT, grid resistance change circuit and power supply circuit, and power supply circuit adopts push-pull drive, and IGBT and first resistance R1 are established ties mutually, and first resistance R1 is established ties mutually with grid resistance change circuit; the gate resistance change circuit comprises a diode D1 and a transistor Q1 connected with the diode D1 in parallel, and a second resistor R2 is connected with the transistor Q1 in series; the utility model relates to an IGBT drive circuit of variable switch resistance, through setting up grid resistance change circuit, can change the size of the grid resistance of IGBT in the IGBT turn-off process, satisfy the small grid resistance when IGBT turns on, the demand of the grid resistance relatively big when turning off; and further, the IGBT driving circuit is matched with a driving signal, the contradiction between turn-off loss and voltage overshoot is solved, and the effect of improving the performance of the IGBT is achieved.

Description

IGBT drive circuit with variable switch resistance

Technical Field

The utility model relates to an electronic circuit technical field, more specifically say, the utility model relates to a but variable switch resistance's IGBT drive circuit.

Background

An Insulated Gate Bipolar Transistor (IGBT) is a composite fully-controlled voltage-driven power semiconductor device consisting of a Bipolar Junction Transistor (BJT) and an insulated Gate field effect transistor (MOS), and has the advantages of high input impedance of the MOSFET and low conduction voltage drop of the GTR.

In the existing IGBT driving circuit, a grid resistor is required to be connected to a grid for adjusting the switching characteristic of the IGBT, and the IGBT switching speed is increased and the switching power consumption is reduced due to the fact that the grid resistor is reduced in the switching-on process of the IGBT; in the turn-off process, the current change rate that the IGBT bore will arouses again to the grid resistance of undersize is too fast, and then arouses the damage of IGBT, consequently, if select grid resistance always be the problem that needs to consider, open and turn-off the in-process in order to satisfy the IGBT, to the different demands of grid resistance, the utility model provides a but change switch resistance's IGBT drive circuit.

SUMMERY OF THE UTILITY MODEL

In order to overcome the above-mentioned defects in the prior art, the embodiments of the present invention provide an IGBT driving circuit with a variable switch resistance to solve the problems presented in the above-mentioned background art.

In order to achieve the above object, the utility model provides a following technical scheme:

the IGBT driving circuit of the variable switch resistance comprises a first resistor R1, an IGBT, a grid resistance change circuit and a power supply circuit, wherein the power supply circuit adopts push-pull driving, the IGBT is connected with a first resistor R1 in series, and the first resistor R1 is connected with the grid resistance change circuit in series; the gate resistance change circuit comprises a diode D1 and a transistor Q1 connected in parallel with the diode D1, and a second resistor R2 is connected in series with the transistor Q1.

In a preferred embodiment, the transistor Q1 is a PNP type triode, and a second resistor R2 is connected in series with the pole of the transistor Q1E.

In a preferred embodiment, when the IGBT is turned on, the gate resistance of the IGBT is the first resistance R1.

In a preferred embodiment, when the IGBT is turned off, the gate resistance of the IGBT is the sum of the first resistor R1 and the second resistor R2.

The utility model discloses a technological effect and advantage:

the utility model relates to a variable switch resistance's IGBT drive circuit, through setting up grid resistance change circuit, the circuit that has improved IGBT turn-off performance can change the size of IGBT's grid resistance in the IGBT turn-off process, satisfies the little grid resistance when IGBT turns on, the demand of relative big grid resistance when turn-off; the IGBT power supply circuit is matched with a driving signal, the contradiction between turn-off loss and voltage overshoot is solved, and the turn-off performance of the IGBT is improved; the IGBT chip has small turn-off loss, simultaneously reduces the overvoltage risk of the chip, and meets the requirements of low turn-off loss and high reliability of the IGBT chip; the effect of improving the performance of the IGBT is achieved.

Drawings

Fig. 1 is a schematic diagram of an overall structure of an IGBT driving circuit with a variable switch resistance in the prior art.

Detailed Description

The technical solutions in the embodiments of the present invention will be described clearly and completely with reference to the accompanying drawings in the embodiments of the present invention, and it is obvious that the described embodiments are only some embodiments of the present invention, not all embodiments. Based on the embodiments in the present invention, all other embodiments obtained by a person skilled in the art without creative work belong to the protection scope of the present invention.

Examples

As shown in fig. 1, the utility model relates to a variable switch resistance's IGBT drive circuit, including first resistance R1, IGBT10, grid resistance change circuit 20 and power supply circuit 30, power supply circuit 30 adopts the push-pull drive by anodal and negative terminal output drive voltage, can promote the electric current and provide the ability, accomplishes the charging process to grid input electric capacity charge rapidly. The IGBT10 is connected in series to the first resistor R1, and the first resistor R1 is connected in series to the gate resistance change circuit 20 in the direction of current flow. The gate resistance varying circuit 20 includes a diode D1 and a transistor Q1 connected in parallel thereto, and in order to meet the requirement of a gate resistor with a relatively large resistance value when the IGBT is turned off, the transistor Q1 is connected in series with a second resistor R2.

As a further optimization and improvement, the transistor Q1 is a PNP type triode, and a second resistor R2 is connected in series with the pole of the transistor Q1E.

The utility model relates to a but variable switch resistance's IGBT drive circuit concrete operating principle as follows:

when the power supply circuit outputs a positive voltage, i.e., the positive electrode potential thereof is higher than the negative electrode potential, the transistor Q1 is turned off, and a current flows through the diode D1 via the first resistor R1 to be applied between the gate and the emitter of the IGBT10, thereby turning on the IGBT. At this time, the gate resistance is the first resistance R1, so that the turn-on speed of the IGBT10 is increased, and the turn-on power consumption is reduced. When the power supply circuit outputs negative voltage, namely the positive electrode potential is lower than the negative electrode potential, at the moment, the diode D1 is cut off, the transistor Q1 is switched on, the branch circuit gate resistor is the sum of the first resistor R1 and the second resistor R2, the requirement of the gate resistor with relatively large resistance value when the IGBT10 is switched off is met, and therefore the contradiction between the switching on and the switching off of the IGBT is balanced.

The points to be finally explained are: first, in the description of the present application, it should be noted that, unless otherwise specified and limited, the terms "mounted," "connected," and "connected" should be understood broadly, and may be a mechanical connection or an electrical connection, or a communication between two elements, and may be a direct connection, and "upper," "lower," "left," and "right" are only used to indicate a relative positional relationship, and when the absolute position of the object to be described is changed, the relative positional relationship may be changed;

secondly, the method comprises the following steps: in the drawings of the disclosed embodiments of the present invention, only the structures related to the disclosed embodiments are referred to, and other structures can refer to the common design, and under the condition of no conflict, the same embodiment and different embodiments of the present invention can be combined with each other;

and finally: the above description is only for the purpose of illustrating the preferred embodiments of the present invention and is not to be construed as limiting the present invention, and any modifications, equivalent replacements, improvements, etc. made within the spirit and principle of the present invention should be included in the protection scope of the present invention.

Claims

1. The utility model provides a but IGBT drive circuit of change switching resistance which characterized in that: the power supply circuit comprises a first resistor (R1), an IGBT (10), a gate resistance change circuit (20) and a power supply circuit (30), wherein the power supply circuit (30) adopts push-pull driving, the IGBT (10) is connected with the first resistor (R1) in series, and the first resistor (R1) is connected with the gate resistance change circuit (20) in series; the gate resistance change circuit (20) comprises a diode (D1) and a transistor (Q1) connected with the diode in parallel, and the transistor (Q1) is connected with a second resistor (R2) in series.

2. The IGBT driving circuit of a variable switching resistance according to claim 1, characterized in that: the transistor (Q1) is a PNP type triode, and a second resistor (R2) is connected in series with the E pole of the transistor (Q1).

3. The IGBT driving circuit of a variable switching resistance according to claim 1, characterized in that: when the IGBT (10) is turned on, the gate resistance of the IGBT (10) is a first resistance (R1).

4. The IGBT driving circuit of a variable switching resistance according to claim 1, characterized in that: when the IGBT (10) is turned off, the gate resistance of the IGBT (10) is the sum of the first resistance (R1) and the second resistance (R2).