CN217086611U - Semiconductor epitaxial structure and LED chip - Google Patents
Semiconductor epitaxial structure and LED chip Download PDFInfo
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- CN217086611U CN217086611U CN202220741316.6U CN202220741316U CN217086611U CN 217086611 U CN217086611 U CN 217086611U CN 202220741316 U CN202220741316 U CN 202220741316U CN 217086611 U CN217086611 U CN 217086611U
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Abstract
The utility model provides a semiconductor epitaxial structure and LED chip, through the defect barrier layer, first N type semiconductor layer, current barrier layer, second N type semiconductor layer, active layer, P type semiconductor layer are piled up in proper order to the substrate surface. Blocking, by the defect blocking layer, upward extension of defects generated due to lattice mismatch between the substrate and a semiconductor layer; meanwhile, the current blocking layer blocks the longitudinal transmission of current on the surface of the second N-type semiconductor layer, so that the transverse transmission of the current on an interface is improved, and the effect of current expansion is increased.
Description
Technical Field
The utility model relates to a light emitting diode field especially relates to a semiconductor epitaxial structure and LED chip.
Background
A Light Emitting Diode (LED) is a semiconductor electronic component capable of Emitting Light. The LED has the advantages of high efficiency, long service life, small volume, low power consumption and the like, and can be applied to the fields of indoor and outdoor white light illumination, screen display, backlight sources and the like. In the development of the LED industry, gallium nitride (GaN) -based materials are a typical representative of group V-III compound semiconductors, and improving the photoelectric properties of GaN-based LEDs has become a key to the semiconductor lighting industry.
The epitaxial wafer is a primary finished product in the LED preparation process. The conventional GaN-based LED epitaxial wafer comprises a substrate, an N-type semiconductor layer, an active layer and a P-type semiconductor layer. The substrate is used for providing a growth surface for the epitaxial material, the N-type semiconductor layer is used for providing electrons for carrying out recombination luminescence, the P-type semiconductor layer is used for providing holes for carrying out recombination luminescence, and the active layer is used for carrying out radiation recombination luminescence of the electrons and the holes.
However, due to the difference of lattice constants between the substrate (silicon carbide, sapphire, silicon wafer, etc.) and GaN, stress and defects are accumulated during the growth of GaN-based epitaxial layer on the substrate, and the release of stress during deposition results in the generation of dislocation, i.e., a leakage channel extending upward, which affects the crystal growth quality of the underlying layer and the quantum well region, and affects carrier transport and quantum efficiency.
In view of the above, the present inventors have specially designed a semiconductor epitaxial structure and an LED chip, and have resulted from the present disclosure.
SUMMERY OF THE UTILITY MODEL
An object of the utility model is to provide a semiconductor epitaxial structure and LED chip to improve the crystal quality of epitaxial layer and effectively provide the carrier, increase the current expansion ability.
In order to realize the purpose, the utility model discloses a technical scheme as follows:
a semiconductor epitaxial structure, comprising:
a substrate;
the semiconductor device comprises a defect blocking layer, a first N-type semiconductor layer, a current blocking layer, a second N-type semiconductor layer, an active layer and a P-type semiconductor layer which are sequentially stacked on the surface of the substrate.
Preferably, the first N-type semiconductor layer comprises a semiconductor layer which is non-uniformly N-type doped along a first direction, the first direction is perpendicular to the substrate, and the first direction is directed to the P-type semiconductor layer from the substrate.
Preferably, the semiconductor epitaxial structure is used as an epitaxial structure of a GaN-based light emitting diode, and the second N-type semiconductor layer includes an N-type doped GaN layer, and the P-type semiconductor layer includes a P-type doped GaN layer.
Preferably, the defect blocking layer includes an AlGaN film layer for blocking upward extension of defects generated due to lattice mismatch between the substrate and the semiconductor layer.
Preferably, the current blocking layer includes an AlGaN layer for blocking a longitudinal transmission of a current on a surface of the second N-type semiconductor layer.
Preferably, the Al composition of the defect blocking layer is greater than the Al composition of the current blocking layer.
Preferably, the N-type doping concentration of the first N-type semiconductor layer varies in a gradient manner along the first direction.
Preferably, the N-type doping concentration of the first N-type semiconductor layer is not less than 1 x 10 17 cm -3 。
Preferably, the N-type doping concentration of the two sides of the first N-type semiconductor layer is greater than that of other regions of the first N-type semiconductor layer.
Preferably, the N-type doping concentration on both sides of the first N-type semiconductor layer is obtained by linearly increasing or linearly decreasing.
Preferably, the N-type doping concentration on both sides of the first N-type semiconductor layer is 1 x 10 19 cm -3 The other region of the first N-type semiconductor layer has N-type doping concentration of 1 x 10 18 cm -3 。
The utility model also provides a LED chip, which comprises;
the semiconductor epitaxial structure of any one of the above;
the N-type electrode and the N-type semiconductor layer form ohmic contact;
and the P-type electrode and the P-type semiconductor layer form ohmic contact.
According to the above technical scheme, the utility model provides a semiconductor epitaxial structure, through the defect barrier layer, first N type semiconductor layer, current barrier layer, second N type semiconductor layer, active layer, P type semiconductor layer are piled up in proper order to the substrate surface. Blocking, by the defect blocking layer, upward extension of defects generated due to lattice mismatch between the substrate and a semiconductor layer; meanwhile, the current blocking layer blocks the longitudinal transmission of current on the surface of the second N-type semiconductor layer, so that the transverse transmission of the current on an interface is improved, and the effect of current expansion is increased.
Furthermore, the N-type doping concentration of the two sides of the first N-type semiconductor layer is greater than that of other regions of the first N-type semiconductor layer, so that the first N-type semiconductor layer can effectively provide current carriers and increase the current expansion capability while being connected with the defect blocking layer and the current blocking layer of the high-aluminum components on the two sides, and can also have a better I/V curve under a small current, so that the LED chip has higher internal quantum efficiency, and the LED chip is particularly suitable for small-size LED chips.
According to the above technical scheme, the utility model provides a semiconductor epitaxial structure's manufacturing method, when realizing above-mentioned semiconductor epitaxial structure's beneficial effect, its technology simple manufacture is convenient, the productization of being convenient for.
According to the above technical scheme, the utility model provides a LED chip is through obtaining on foretell semiconductor epitaxial structure's basis, and when consequently it had above-mentioned semiconductor epitaxial structure's beneficial effect, its technology simple manufacture is convenient, the productization of being convenient for.
Drawings
In order to more clearly illustrate the embodiments of the present invention or the technical solutions in the prior art, the drawings required to be used in the description of the embodiments or the prior art will be briefly described below, it is obvious that the drawings in the following description are only embodiments of the present invention, and for those skilled in the art, other drawings can be obtained according to the provided drawings without creative efforts.
Fig. 1 is a schematic structural diagram of a semiconductor epitaxial structure according to an embodiment of the present invention;
fig. 2 to fig. 4 are schematic diagrams illustrating the variation of the N-type doping concentration of the first N-type semiconductor layer with the thickness according to an embodiment of the present invention;
the symbols in the drawings illustrate that: 1. the semiconductor device comprises a substrate, a 2 buffer layer, a 3 unintentional doping layer, a 4 defect blocking layer, a 5 first N type semiconductor layer, a 6 current blocking layer, a 7 second N type semiconductor layer, an 8 active layer, a 9P type semiconductor layer.
Detailed Description
In order to make the contents of the present invention clearer, the contents of the present invention will be further explained with reference to the accompanying drawings. The present invention is not limited to this specific embodiment. Based on the embodiments in the present invention, all other embodiments obtained by a person skilled in the art without creative efforts all belong to the protection scope of the present invention.
As shown in fig. 1, a semiconductor epitaxial structure includes:
a substrate 1;
the semiconductor device includes a buffer layer 2, an unintentional doping layer 3, a defect blocking layer 4, a first N-type semiconductor layer 5, a current blocking layer 6, a second N-type semiconductor layer 7, an active layer 8, and a P-type semiconductor layer 9 stacked in this order on a surface of a substrate 1.
It should be noted that, in the embodiment of the present invention, in order to better realize the crystal quality of the epitaxial structure, the buffer layer 2 and the unintentional doping layer 3 may be selectively grown according to actual conditions, but it is not a limitation of the present invention.
It is to be noted that the type of the substrate 1 is not limited in the semiconductor epitaxial structure of the present embodiment, and for example, the substrate 1 may be, but is not limited to, a sapphire substrate 1, a silicon substrate 1, or the like. In addition, the specific material types of the second N-type semiconductor layer 7, the active layer 8 and the P-type semiconductor layer 9 may also be not limited in the semiconductor epitaxial structure of the present embodiment, for example, the second N-type semiconductor layer 7 may be, but is not limited to, a gallium nitride layer, and correspondingly, the P-type semiconductor layer 9 may be, but is not limited to, a gallium nitride layer.
In an embodiment of the present invention, the first N-type semiconductor layer 5 includes a semiconductor layer doped along the non-uniform N-type in the first direction, the first direction is perpendicular to the substrate 1, and the P-type semiconductor layer 9 is pointed by the substrate 1.
In the embodiment of the present invention, the semiconductor epitaxial structure is used as the epitaxial structure of the GaN-based light emitting diode, the second N-type semiconductor layer 7 includes the N-type doped GaN layer, and the P-type semiconductor layer 9 includes the P-type doped GaN layer.
In the embodiment of the present invention, further, the defect blocking layer 4 includes an AlGaN film layer for blocking the upward extension of the defect generated by the lattice mismatch between the substrate 1 and the semiconductor layer.
In the embodiment of the present invention, further, the current blocking layer 6 includes an AlGaN layer for blocking the vertical transmission of current on the surface of the second N-type semiconductor layer 7.
In the embodiment of the present invention, further, the Al composition of the defect blocking layer 4 is greater than the Al composition of the current blocking layer 6.
In the embodiment of the present invention, further, the N-type doping concentration of the first N-type semiconductor layer 5 is changed in a gradient manner along the first direction.
In an embodiment of the present invention, further, the N-type doping concentration of the first N-type semiconductor layer 5 is not less than 1 x 10 17 cm -3 。
In the embodiment of the present invention, further, the N-type doping concentration at two sides of the first N-type semiconductor layer 5 is greater than the N-type doping concentration at other regions of the first N-type semiconductor layer 5.
In the embodiment of the present invention, further, the N-type doping concentration at both sides of the first N-type semiconductor layer 5 is obtained by linearly increasing or linearly decreasing.
In an embodiment of the present invention, further, the N-type doping concentration on both sides of the first N-type semiconductor layer 5 is 1 x 10 19 cm -3 The other region of the first N-type semiconductor layer 5 has an N-type doping concentration of 1 x 10 18 cm -3 。
The embodiment of the utility model provides a still provide a semiconductor epitaxial structure's manufacturing method, the manufacturing method includes following step:
step S01, providing a substrate 1;
step S02, growing a defect barrier layer 4, a first N-type semiconductor layer 5, a current barrier layer 6, a second N-type semiconductor layer 7, an active layer 8 and a P-type semiconductor layer 9 on the surface of a substrate 1 in sequence;
the semiconductor epitaxial structure is used as an epitaxial structure of the GaN-based light emitting diode, the second N-type semiconductor layer 7 comprises an N-type doped GaN layer, and the P-type semiconductor layer 9 comprises a P-type doped GaN layer;
the defect blocking layer 4 comprises an AlGaN film layer;
the current blocking layer 6 includes an AlGaN layer;
the first N-type semiconductor layer 5 comprises a non-uniform N-type doped semiconductor layer along a first direction, the first direction is vertical to the substrate 1 and is directed to the P-type semiconductor layer 9 from the substrate 1; further, the N-type doping concentration of both sides of the first N-type semiconductor layer 5 is greater than that of other regions of the first N-type semiconductor layer 5.
Further, the Al composition of the defect blocking layer 4 is larger than that of the current blocking layer 6.
In an embodiment of the present invention, further, the N-type doping concentration on both sides of the first N-type semiconductor layer 5 is 1 x 10 19 cm -3 The other region of the first N-type semiconductor layer 5 has an N-type doping concentration of 1 x 10 18 cm -3 。
Fig. 2 to fig. 4 are schematic diagrams illustrating the variation of the N-type doping concentration of the first N-type semiconductor layer 5 with the thickness according to an embodiment of the present invention, wherein the abscissa represents the thickness and the ordinate represents the N-type doping concentration. The present embodiment preferably adopts a doping gradient manner as shown in fig. 2; it should be noted that fig. 2-4 are only examples and are not intended to limit the present invention.
The embodiment of the utility model also provides a LED chip, which comprises;
a semiconductor epitaxial structure of any of the above;
the N-type electrode and the N-type semiconductor layer form ohmic contact;
and the P-type electrode is in ohmic contact with the P-type semiconductor layer 9.
According to the above technical solution, the present invention provides a semiconductor epitaxial structure, which sequentially stacks the defect blocking layer 4, the first N-type semiconductor layer 5, the current blocking layer 6, the second N-type semiconductor layer 7, the active layer 8, and the P-type semiconductor layer 9 on the surface of the substrate 1. Blocking upward extension of defects generated due to lattice mismatch between the substrate 1 and the semiconductor layer by the defect blocking layer 4; meanwhile, the current barrier layer 6 blocks the longitudinal transmission of current on the surface of the second N-type semiconductor layer 7, so that the transverse transmission of current on an interface is improved, and the effect of current expansion is increased.
Furthermore, the N-type doping concentration of the two sides of the first N-type semiconductor layer 5 is greater than that of the other regions of the first N-type semiconductor layer 5, so that the first N-type semiconductor layer 5 can effectively provide carriers and increase the current expansion capability while being connected with the defect blocking layers 4 and the current blocking layers 6 of the high-aluminum components on the two sides, and can also have a better I/V curve under a small current, so that the LED chip has higher internal quantum efficiency, and the LED chip is particularly suitable for small-size LED chips.
According to the above technical scheme, the utility model provides a semiconductor epitaxial structure's manufacturing method, when realizing above-mentioned semiconductor epitaxial structure's beneficial effect, its technology simple manufacture is convenient, the productization of being convenient for.
According to the above technical scheme, the utility model provides a LED chip is through obtaining on foretell semiconductor epitaxial structure's basis, and when consequently it had above-mentioned semiconductor epitaxial structure's beneficial effect, its technology simple manufacture is convenient, the productization of being convenient for.
The embodiments in the present description are described in a progressive manner, each embodiment focuses on differences from other embodiments, and the same and similar parts among the embodiments are referred to each other.
It is further noted that, herein, relational terms such as first and second, and the like may be used solely to distinguish one entity or action from another entity or action without necessarily requiring or implying any actual such relationship or order between such entities or actions. Also, the terms "comprises," "comprising," or any other variation thereof, are intended to cover a non-exclusive inclusion, such that an article or apparatus that comprises a list of elements does not include only those elements but may include other elements not expressly listed or inherent to such article or apparatus. Without further limitation, an element defined by the phrase "comprising an … …" does not exclude the presence of other like elements in an article or device that comprises the element.
The previous description of the disclosed embodiments is provided to enable any person skilled in the art to make or use the present application. Various modifications to these embodiments will be readily apparent to those skilled in the art, and the generic principles defined herein may be applied to other embodiments without departing from the spirit or scope of the application. Thus, the present application is not intended to be limited to the embodiments shown herein but is to be accorded the widest scope consistent with the principles and novel features disclosed herein.
Claims (8)
1. A semiconductor epitaxial structure, comprising:
a substrate;
the semiconductor device comprises a defect blocking layer, a first N-type semiconductor layer, a current blocking layer, a second N-type semiconductor layer, an active layer and a P-type semiconductor layer which are sequentially stacked on the surface of the substrate;
the semiconductor epitaxial structure is used as an epitaxial structure of the GaN-based light emitting diode, the second N-type semiconductor layer comprises an N-type doped GaN layer, and the P-type semiconductor layer comprises a P-type doped GaN layer;
the defect blocking layer comprises an AlGaN film layer and is used for blocking upward extension of defects generated between the substrate and the semiconductor layer due to lattice mismatch;
the current blocking layer comprises an AlGaN layer and is used for blocking the longitudinal transmission of current on the surface of the second N-type semiconductor layer.
2. The semiconductor epitaxial structure of claim 1, wherein the first N-type semiconductor layer comprises a non-uniform N-type doped semiconductor layer along a first direction, the first direction being perpendicular to the substrate and directed from the substrate to the P-type semiconductor layer.
3. The semiconductor epitaxial structure of claim 1, wherein the Al composition of the defect blocking layer is greater than the Al composition of the current blocking layer.
4. The semiconductor epitaxial structure of claim 1, wherein the N-type doping concentration of the first N-type semiconductor layer varies in a gradient along the first direction.
5. The semiconductor epitaxial structure of claim 4, wherein the first N-type semiconductor layer has an N-type doping concentration of not less than 1 x 10 17 cm -3 。
6. The semiconductor epitaxial structure of claim 4, wherein the N-type doping concentration on both sides of the first N-type semiconductor layer is greater than the N-type doping concentration of other regions of the first N-type semiconductor layer.
7. The semiconductor epitaxial structure according to claim 6, wherein the N-type doping concentration on both sides of the first N-type semiconductor layer is obtained by linearly increasing or linearly decreasing.
8. An LED chip, comprising;
a semiconductor epitaxial structure of any one of claims 1 to 7;
the N-type electrode and the N-type semiconductor layer form ohmic contact;
and the P-type electrode and the P-type semiconductor layer form ohmic contact.
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| Application Number | Priority Date | Filing Date | Title |
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| CN202220741316.6U CN217086611U (en) | 2022-03-31 | 2022-03-31 | Semiconductor epitaxial structure and LED chip |
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| Application Number | Priority Date | Filing Date | Title |
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| CN202220741316.6U CN217086611U (en) | 2022-03-31 | 2022-03-31 | Semiconductor epitaxial structure and LED chip |
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| CN217086611U true CN217086611U (en) | 2022-07-29 |
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