CN216929168U

CN216929168U - VCSEL laser with InGaN electronic deceleration layer

Info

Publication number: CN216929168U
Application number: CN202123147411.8U
Authority: CN
Inventors: 田康凯; 贾兴宇; 张紫辉; 张勇辉
Original assignee: Tianjin Saimikal Technology Co ltd
Current assignee: Tianjin Saimikal Technology Co ltd
Priority date: 2021-12-15
Filing date: 2021-12-15
Publication date: 2022-07-08
Anticipated expiration: 2031-12-15

Abstract

A VCSEL laser with an InGaN electronic deceleration layer comprises a substrate, a buffer layer, a nitride epitaxial DBR, an N-type semiconductor transmission layer, an N-type InGaN electronic deceleration layer, a multi-quantum well layer, a P-type electronic barrier layer, a P-type semiconductor transmission layer, a P-type heavily doped semiconductor transmission layer, a current limiting hole, a current expansion layer, a dielectric DBR and a P-type ohmic electrode; a shoulder is formed on the N-type semiconductor transmission layer, the N-type InGaN electronic deceleration layer, the multi-quantum well layer, the P-type electronic barrier layer, the P-type semiconductor transmission layer, the P-type heavily doped semiconductor transmission layer and the current expansion layer, the bottom of the shoulder extends to the N-type semiconductor transmission layer, and an N-type ohmic electrode is arranged on the exposed N-type semiconductor transmission layer; the electron blocking effect is achieved, electrons are limited from leaking from MQWs, hole injection is promoted to be combined with radiation, potential barriers can be introduced through insertion of InGaN, radiation combination rate is improved, VCSEL light output power and photoelectric conversion efficiency are improved, and performance of devices is improved.

Description

VCSEL laser with InGaN electronic deceleration layer

Technical Field

The application relates to the technical field of semiconductors, in particular to a VCSEL laser with an InGaN electronic deceleration layer.

Background

Vertical Cavity Surface Emitting Lasers (VCSELs) have many advantages over conventional edge emitting lasers, such as low threshold current, high slope efficiency, small beam divergence angle, and low cost; therefore, VCSEL lasers are widely used in laser displays, optical storage, high resolution printing, optical communication, and optical data links; meanwhile, due to the surface emission characteristic, wafer level testing is easier to realize, and the manufacturing cost of the chip is further reduced.

In an active quantum well material for preparing a semiconductor VCSEL laser, a narrow-bandgap semiconductor based on GaAs and InP can be used for realizing red light lasing, the industrial preparation of the VCSEL laser with long wavelength tends to mature at present, and a bandgap semiconductor similar to a GaN-based compound semiconductor is required for realizing blue-green light emission in a visible light spectrum range; today, the main problems facing GaN-based VCSEL laser technology mainly include the following aspects:

(1) first, it is difficult to implement a high quality DBR;

(2) secondly, because the light emitting region of the VCSEL laser is positioned in the hole, and gain cannot be obtained outside the hole, the realization of good transverse current and optical limitation is very important;

(3) the GaN-based VCSEL laser has serious leakage, namely electrons in an MQWs region overflow an Electron Blocking Layer (EBL) and enter p-GaN, and the main reason is that the mobility of the electrons is far higher than that of holes, so that the injection rate of the electrons is too high and is not matched with the injection of the holes, and the radiation recombination rate is reduced due to the leakage of the electrons in the injection process of the electrons, so that the performance of the VCSEL laser is seriously restricted.

These problems described above have prevented further development of GaN-based VCSEL lasers, and for this reason, researchers have proposed various solutions, such as increasing the quantum barrier in InGaN/GaN MQWs by using polarization-matched AlGaInN Electron Blocking Layers (EBLs) and using AlGaN or AlN quantum barriers, after which electron leakage in GaN-based VCSELs remains a big problem, and the current technological approaches are mainly to make technological improvements on the EBLs at and after electron injection into the quantum wells.

Therefore, a new technical solution is needed to solve the above technical problems.

SUMMERY OF THE UTILITY MODEL

The purpose of the application is to provide a VCSEL laser with an InGaN electronic deceleration layer aiming at the defects existing in the prior art, by inserting a layer of InGaN structure in front of an MQWs (multiple quantum well) region, on one hand, the polarization electric field between the InGaN layer and GaN is the same as the electron injection direction, thereby reducing the speed before the electrons are injected into the quantum well, realizing the blocking effect on the electrons, thereby limiting the leakage of the electrons from the MQWs, promoting the radiation recombination of hole injection and the hole injection, on the other hand, by inserting InGaN, a potential barrier can be introduced, thereby effectively improving the transverse expansion of current into a limiting hole, promoting the current expansion of a device, increasing the electron capture efficiency and improving the hole transmission, improving the radiation recombination rate, improving the optical output power and the photoelectric conversion efficiency of the VCSEL, and further improving the performance of the device.

A VCSEL laser with an InGaN electronic deceleration layer comprises a substrate, wherein a buffer layer, a nitride epitaxial DBR and an N-type semiconductor transmission layer are sequentially arranged on the substrate, an N-type InGaN electronic deceleration layer, a multi-quantum well layer, a P-type electronic barrier layer, a P-type semiconductor transmission layer and a P-type heavily doped semiconductor transmission layer are sequentially arranged on the N-type semiconductor transmission layer, a current limiting hole is formed in the P-type heavily doped semiconductor transmission layer, current expansion layers cover the P-type heavily doped semiconductor transmission layer and the current limiting hole, a medium DBR and a P-type ohmic electrode are arranged on the upper portion of the current expansion layer, the N-type semiconductor transmission layer, the N-type InGaN electronic deceleration layer, the multi-quantum well layer, the P-type electronic barrier layer, the P-type semiconductor transmission layer, The P-type heavily doped semiconductor transmission layer, the current limiting hole and the current expansion layer form a shoulder, the bottom of the shoulder extends into the N-type semiconductor transmission layer, and an N-type ohmic electrode is arranged on the exposed N-type semiconductor transmission layer.

As a preferable scheme, the projection area of the N-type InGaN electronic deceleration layer on the N-type semiconductor transmission layer is 60-80% of the maximum area of the N-type semiconductor transmission layer.

Preferably, the N-type ohmic electrode has a ring shape, and the width of the ring is 0.1 μm to 1 μm.

Preferably, the current confining hole is an annular insulating layer.

Preferably, the annular insulating layer is made of Si₃N₄、Ta₂O₅、SiO₂And the thickness of the insulating layer is 10-100 nm, and the width of the ring of the annular insulating layer is 1-10 mu m.

Preferably, the projected area of the dielectric DBR on the current spreading layer is 0.5-0.9 times of the area of the current spreading layer.

Preferably, the P-type ohmic electrode is located outside the current spreading layer, and the width of the P-type ohmic electrode is 0.1 μm to 2 μm.

Preferably, the substrate is sapphire, SiC, Si, AlN, GaN or quartz glass.

As a preferable mode, the difference of the substrate along the epitaxial growth direction can be divided into a polar plane [0001] substrate, a semipolar plane [11-22] substrate or a nonpolar plane [1-100] substrate.

Preferably, the buffer layer is made of Al_x1In_y1Ga_1-x1-y1N, wherein the coefficient of each component is more than or equal to 0 and less than or equal to x1 and less than or equal to 1, the coefficient of each component is more than or equal to 0 and less than or equal to y1 and less than or equal to 1, the coefficient of each component is more than or equal to 0 and less than or equal to 1-x1-y1 and less than or equal to 1, and the thickness of the buffer layer is 10-50 nm.

Preferably, the materials of the nitride epitaxy DBR and the medium DBR are formed by alternating high-refractive index materials and low-refractive index materials, and the thicknesses of the nitride epitaxy DBR and the medium DBR are respectively one fourth of the wavelength of the required light-emitting wavelength in the medium.

Preferably, the material of the N-type semiconductor transmission layer is Al_x2In_y2Ga_1-x2-y2N, wherein the coefficient of each component is more than or equal to 0 and less than or equal to x2 and less than or equal to 1, the coefficient of each component is more than or equal to 0 and less than or equal to y2 and less than or equal to 1, the coefficient of each component is more than or equal to 0 and less than or equal to 1-x2-y2 and less than or equal to 1, and the thickness of the N-type semiconductor transmission layer is 1-5 mu m.

As a preferable scheme, the material of the electron deceleration layer of the N-type InGaN electron deceleration layer is In_x1Ga_1-x1N, wherein the coefficient of each component is more than or equal to 0 and less than or equal to x1 and less than or equal to 1, and the coefficient of each component is more than or equal to 0 and less than or equal to 1-x1 and less than or equal to 1.

Preferably, the material of the MQW layer is Al_x3In_y3Ga_1-x3-y3N/Al_x4In_y4Ga_1-x4-y4N, wherein the coefficient of each component is more than or equal to 0 and less than or equal to x3 and less than or equal to 1, y3 and less than or equal to 0 and less than or equal to 1, x3-y3 and less than or equal to 0 and less than or equal to 1, x4 and less than or equal to 0 and less than or equal to 1, y4 and less than or equal to 0 and less than or equal to 1, and x4-y and less than or equal to 0 and less than or equal to 1; quantum barrier Al_x4In_y4Ga_1-x4-y4The forbidden band width of N is higher than that of quantum well Al_x3In_y3Ga_1-x3-y3Forbidden band width of N, quantum well Al_x3In_y3Ga_1-x3-y3N is greater than or equal to 1, quantum well Al_x3In_y3Ga_1-x3-y3N is 1-10 nm thick, and quantum barrier Al_x4In_y4Ga_1-x4-y4The thickness of N is 5-50 nm.

Preferably, the P-type electron blocking layer is made of Al_x5In_y5Ga_1-x5-y5N, wherein the coefficient of each component is more than or equal to 0 and less than or equal to x5 and less than or equal to 1, y5 and less than or equal to 0 and less than or equal to 1, 0-x 5-y5 and less than or equal to 1, and Al_x5In_y5Ga_1-x5-y5The thickness of N is 10 nm-100 nm.

Preferably, the material of the P-type semiconductor transmission layer is Al_x6In_y6Ga_1-x6-y6N, wherein the coefficient of each component is more than or equal to 0 and less than or equal to x6 and less than or equal to 1, y6 and less than or equal to 0 and less than or equal to 1, 0-x 6-y6 and less than or equal to 1, and Al_x6In_y6Ga_1-x6-y6The thickness of N is 50 nm-250 nm.

As a preferred scheme, the material of the P-type heavily doped semiconductor transmission layer is Al_x7In_y7Ga_1-x7-y7N, wherein the component coefficient is more than or equal to 0 and less than or equal to x7 and less than or equal to 1, the component coefficient is more than or equal to 0 and less than or equal to y7 and less than or equal to 1, the component coefficient is more than or equal to 0 and less than or equal to 1-x7-y7 and less than or equal to 1, the material is doped into P-type heavy dopingDoping concentration of 1e25m³～1e26m³，Al_x7In_y7Ga_1-x7-y7The thickness of N is 10-50 nm.

As a preferable scheme, the material of the current spreading layer can be ITO, Ni/Au, zinc oxide, graphene, aluminum or metal nanowires, and the thickness of the current spreading layer is 10 nm-100 nm.

Preferably, the material of the P-type ohmic electrode is Ni/Au, Cr/Au, Pt/Au, Ni/Al of the P-type ohmic electrode, and the projected area of the P-type ohmic electrode is 5-100% of the area of the current spreading layer.

Preferably, the N-type ohmic electrode is made of Al/Au or Cr/Au, wherein the projection area of the N-type ohmic electrode is 5-100% of the area of the exposed N-type semiconductor transmission layer.

In summary, compared with the prior art, the utility model has the following substantive features and progresses, and the beneficial effects of the utility model are as follows:

(1) the application is a VCSEL laser device with an electronic retarder structure, which is improved on the existing standard laser device by growing an N-type InGaN layer, namely an electronic retarder layer, in front of an MQWs layer (a multiple quantum well layer); on one hand, the polarization electric field generated at the interface of the N-type InGaN layer and the N-type GaN layer has the same direction as the electron injection direction, so that the speed of electrons before being injected into a quantum well is reduced, electric leakage is prevented, the radiation recombination with holes is promoted, and the luminous power of a VCSEL laser device is greatly improved; on the other hand, the insertion of InGaN introduces a potential barrier, which can effectively improve the current expansion of the N-type region, so that the whole device obtains better transverse current, thereby improving the performance of the VCSEL laser device.

(2) The VCSEL laser device with the electronic speed reducer structure is simple in relative manufacturing process, easy to operate, high in repeatability and low in production cost.

Drawings

FIG. 1 is a schematic diagram of the epitaxial structure of a VCSEL laser with an InGaN electronic retarder layer of the present invention;

FIG. 2 is a schematic structural diagram of a VCSEL laser epitaxial wafer with an InGaN electronic retarder layer as required in FIG. 1 fabricated on a substrate surface by an epitaxial technique according to the present invention;

FIG. 3 is a schematic view of an epitaxial wafer structure of the article shown in FIG. 2 after the absorption layer is epitaxially grown, and a step is formed on the P-type heavily doped semiconductor transmission layer by photolithography and etching processes to expose the N-type semiconductor transmission layer;

FIG. 4 is a schematic view of an epitaxial wafer structure of the present invention, in which an insulating layer is grown on a P-type heavily doped semiconductor transmission layer by deposition and a current limiting hole is photoetched;

FIG. 5 is a schematic view of an epitaxial wafer structure for forming a patterned current spreading layer by photolithography and etching according to the present invention;

FIG. 6 is a schematic diagram of the DBR structure of the dielectric layer growing continuously in the current spreading layer according to the present invention;

FIG. 7 is a schematic diagram of a VCSEL laser epitaxial wafer junction with an InGaN electronic retarder layer according to the present invention, in which an N-type ohmic electrode is epitaxially grown on an N-type semiconductor transmission layer and a P-type ohmic electrode is epitaxially grown on a mesa of a current spreading layer;

reference numerals:

101. substrate 102, buffer layer 103, nitride epitaxial DBR 104, N-type semiconductor transport layer

105. N-type InGaN electron deceleration layer 106. multiple quantum well layer 107. P-type electron barrier layer

108P-type semiconductor transmission layer 109P-type heavily doped semiconductor transmission layer 110 current confinement hole

111. Current spreading layer 112, dielectric DBR 113, P-type ohmic electrode

114.N type ohmic electrode

Detailed Description

The following describes in detail a specific embodiment of the present invention with reference to fig. 1 to 7. It should be noted that the specific embodiments described herein are only for illustrating and explaining the present invention and are not to be construed as limiting the present invention.

The first embodiment is as follows:

the embodiment provides a device with InGaNThe VCSEL laser with the sub-deceleration layer, namely the epitaxial structure of the VCSEL laser device with the InGaN electronic deceleration layer, sequentially comprises a circular substrate 101, a buffer layer 102, a nitride epitaxial DBR103, an N-type semiconductor transmission layer 104, an N-type InGaN electronic deceleration layer 105, a multi-quantum well layer 106, a P-type electronic barrier layer 107, a P-type semiconductor transmission layer 108 and a P-type heavily doped semiconductor transmission layer 109 along the epitaxial growth direction, wherein a current limiting hole 110 is arranged on the P-type heavily doped semiconductor transmission layer 109, a current expansion layer 111 covers the P-type heavily doped semiconductor transmission layer 109 and the current limiting hole 110, a dielectric DBR112 and a P-type ohmic electrode 113 are arranged on the upper portion of the current expansion layer 111, and the N-type InGaN semiconductor transmission layer 104, the N-type InGaN electronic deceleration layer 105, the multi-quantum well layer 106, the P-type heavily doped semiconductor transmission layer 109 and the current expansion layer 110 are arranged on the upper portion of the current expansion layer, Shoulders are formed on the multi-quantum well layer 106, the P-type electron barrier layer 107, the P-type semiconductor transmission layer 108, the P-type heavily doped semiconductor transmission layer 109, the current limiting hole 110 and the current expansion layer 111, the bottoms of the shoulders extend into the N-type semiconductor transmission layer 104, and an N-type ohmic electrode 114 is arranged on the exposed N-type semiconductor transmission layer 104; preferably, the projection area of the N-type InGaN electronic deceleration layer 105 on the N-type semiconductor transmission layer 104 is 60 to 80% of the maximum area of the N-type semiconductor transmission layer 104; the lower part of the shoulder of the N-type semiconductor transmission layer 104 completely covers the nitride epitaxy DBR103, and the thickness is 2 mu m; the height of the shoulder is 0.5 μm; preferably, the InGaN electron deceleration layer 105 has an In doping of 0.1, and a thickness of preferably 3nm to 50nm, and more preferably, a thickness of 20 nm; the forbidden bandwidth of the quantum barrier in the multiple quantum well layer 106 is higher than that of the quantum well, and the number of the quantum wells is more than or equal to 1; the outer side of the upper surface of the P-type heavily doped semiconductor transmission layer 109 is an annular insulating layer serving as a current limiting hole 110, and the material of the current limiting hole 110 is preferably SiO₂、Si₃N₄、Ta₂O₅One of the above, the thickness is 10 to 100nm, the width of the circular ring is 1 to 10 μm, and more preferably, the thickness of the current confining hole 110 is 40nm, and the width of the circular ring of the current confining hole 110 is 2.5 μm; a current spreading layer 111 covering the P-type heavily doped semiconductor transmission layer 109 and the current limiting hole 110, and a dielectric DBR112 disposed on the current spreading layer 111, preferablyPreferably, the projected area of the current spreading layer is 0.5-0.9 of the area of the current spreading layer 111, and more preferably, the projected area of the current spreading layer is 0.6 of the area of the current spreading layer 111; the annular P-type ohmic electrode 113 is located outside the current spreading layer 111, and preferably has a width of 0.1-2 μm, and more preferably has a width of 0.5 μm; an N-type ohmic electrode 114 having a ring shape with a width of preferably 0.1 to 1 μm, and more preferably 0.5 μm is positioned on the exposed N-type semiconductor transmission layer 104.

Preferably, the substrate 101 is sapphire, SiC, Si, AlN, GaN, or quartz glass.

Preferably, the difference of the substrate 101 along the epitaxial growth direction may be classified into a polar plane [0001] substrate, a semipolar plane [11-22] substrate, or a nonpolar plane [1-100] substrate.

Preferably, the material of the buffer layer 102 is Al_x1In_y1Ga_1-x1-y1N, wherein the coefficient of each component is more than or equal to 0 and less than or equal to x1 and less than or equal to 1, the coefficient of each component is more than or equal to 0 and less than or equal to y1 and less than or equal to 1, the coefficient of each component is more than or equal to 0 and less than or equal to 1-x1-y1 and less than or equal to 1, and the thickness of the buffer layer is 10-50 nm.

Preferably, the materials of the nitride epitaxy DBR103 and the medium DBR112 are formed by alternating high-refractive index materials and low-refractive index materials, and the thicknesses of the nitride epitaxy DBR103 and the medium DBR112 are respectively one fourth of the wavelength of the required light-emitting wavelength in the medium; the material of the nitride epitaxial DBR103 can be formed by alternately using high-low refractive index materials such as AlN/GaN, AlInN/GaN and the like; the dielectric DBR112 is preferably Ta₂O₅/SiO₂、TiO₂/SiO₂High-refractive index material and low-refractive index material.

Preferably, the material of the N-type semiconductor transmission layer 104 is Al_x2In_y2Ga_1-x2-y2N, wherein the component coefficient is more than or equal to 0 and less than or equal to x2 and less than or equal to 1, the component coefficient is more than or equal to 0 and less than or equal to y2 and less than or equal to 1, the component coefficient is more than or equal to 0 and less than or equal to 1-x2-y2 and less than or equal to 1, and the thickness of the N-type semiconductor transmission layer 104 is 1-5 mu m.

Preferably, the material of the N-type InGaN electron deceleration layer 105 is In_x1Ga_1-x1N, wherein the coefficient of each component is more than or equal to 0 and less than or equal to x1 and less than or equal to 1, and the coefficient of each component is more than or equal to 0 and less than or equal to 1-x1 and less than or equal to 1.

Preferably, the material of the MQW layer 106 is Al_x3In_y3Ga_1-x3-y3N/Al_x4In_y4Ga_1-x4-y4N, wherein the coefficient of each component is more than or equal to 0 and less than or equal to x3 and less than or equal to 1, the coefficient of y3 and less than or equal to 0 and less than or equal to 1, the coefficient of 0 and less than or equal to 1-x3-y3 and less than or equal to 1, the coefficient of 0 and less than or equal to x4 and less than or equal to 1, the coefficient of 0 and less than or equal to y4 and less than or equal to 1, the coefficient of 0 and less than or equal to 1-x4 and less than or equal to 1, the coefficient of 0 and less than or equal to 1-x3 and less than or equal to 1, the coefficient of 0 and less than or equal to 1, the x4 and less than or equal to 1, the x3 and 0 and less than or equal to 1; quantum barrier Al_x4In_y4Ga_1-x4-y4The forbidden band width of N is higher than that of quantum well Al_x3In_y3Ga_1-x3-y3Forbidden band width of N, quantum well Al_x3In_y3Ga_1-x3-y3N is greater than or equal to 1, quantum well Al_x3In_y3Ga_1-x3-y3N is 1-10 nm thick, and quantum barrier Al_x4In_y4Ga_1-x4-y4The thickness of N is 5-50 nm.

Preferably, the material of the P-type electron blocking layer is Al_x5In_y5Ga_1-x5-y5N, wherein the coefficient of each component is more than or equal to 0 and less than or equal to x5 and less than or equal to 1, y5 and less than or equal to 0 and less than or equal to 1, 0-x 5-y5 and less than or equal to 1, and Al_x5In_y5Ga_1-x5-y5The thickness of N is 10 nm-100 nm.

Preferably, the material of the P-type semiconductor transmission layer is Al_x6In_y6Ga_1-x6-y6N, wherein the coefficient of each component is more than or equal to 0 and less than or equal to x6 and less than or equal to 1, y6 and less than or equal to 0 and less than or equal to 1, 0-x 6-y6 and less than or equal to 1, and Al_x6In_y6Ga_1-x6-y6The thickness of N is 50-250 nm.

Preferably, the material of the P-type heavily doped semiconductor transmission layer is Al_x7In_y7Ga_1-x7-y7N, wherein the component coefficient is more than or equal to 0 and less than or equal to x7 and less than or equal to 1, the component coefficient is more than or equal to 0 and less than or equal to y7 and less than or equal to 1, the component coefficient is more than or equal to 0 and less than or equal to 1-x7-y7 and less than or equal to 1, the material is doped by P-type heavy doping, and the doping concentration is 1 multiplied by 10²⁵m^-3～1×10²⁵m^-3,Al_x7In_y7Ga_1-x7-y7The thickness of N is 10-50 nm.

Preferably, the material of the current spreading layer can be ITO, Ni/Au, zinc oxide, graphene, aluminum or metal nanowires, and the thickness of the current spreading layer is 10 nm-100 nm.

Preferably, the N-type ohmic electrode is made of Al/Au or Cr/Au, wherein the projection area of the N-type ohmic electrode is 5-100% of the exposed area of the N-type semiconductor transmission layer.

Example two:

this example describes the preparation of a VCSEL laser with InGaN electronic deceleration layer in example 1:

firstly, baking the substrate 101 In a high temperature environment of 1300 ℃ In an MOCVD reaction furnace, removing foreign matters on the surface of the substrate 101, and then growing a GaN buffer layer 102, an epitaxial AlN/GaN DBR103, an N-type GaN semiconductor transmission layer 104, an InGaN electron deceleration layer 105, and 10 pairs of In respectively_0.07Ga_0.93N/GaN MQW layer 106, P-type Al_0.09Ga_0.91An N electron barrier layer 107, a P-type GaN semiconductor transmission layer 108, a P-type GaN heavily doped semiconductor transmission layer 109, the doping concentration of the P-type GaN heavily doped semiconductor transmission layer 109 is 5 multiplied by 10²⁵m^-3(ii) a The In doping of the InGaN electron deceleration layer 105 was 0.1, and the thickness was 20 nm;

secondly, steps are manufactured on the P-type heavily doped semiconductor transmission layer 109 obtained in the first step through photoetching and etching processes, and the N-type semiconductor transmission layer 104 is exposed;

thirdly, a current limiting hole 110 structure layer is deposited and grown on the P-type heavily doped semiconductor transmission layer 109 obtained in the first step, and the insulator material used by the current limiting hole structure is non-doped SiO₂The thickness is 40 nm; subsequently, a ring-shaped pattern is etched on the insulator material by utilizing the photoetching technology, the ring-shaped pattern covers along the edge of the P-type heavily doped semiconductor transmission layer 109, and the width of the ring-shaped pattern is 2.5 mu m;

fourthly, evaporating a current expansion layer 111 which is made of ITO and has the thickness of 40nm on the current limiting hole 110 obtained in the third step; a patterned current expansion layer 111 is manufactured through photoetching and wet etching, and the current expansion layer 111 is positioned above the P-type heavily doped semiconductor transmission layer 109 and the current limiting hole 110;

a fifth step of Atomic Layer Deposition (ALD)10 pairs of Ta on the current spreading layer obtained in the fourth step₂O₅/SiO₂A dielectric DBR112 with a thickness of 1.27 μm;

in the sixth step, the P-type ohmic electrode 113 and the N-type ohmic electrode 114 are formed by evaporation and photolithography.

Thus, a VCSEL laser with an InGaN electronic deceleration layer according to the first embodiment is fabricated.

Example three:

the difference between this embodiment and the embodiment is that the InGaN electron deceleration layer 105 has an In doping of 0.2.

The above differences in the preparation of VCSEL lasers, the first step is adjusted from the first step of the second embodiment as follows:

firstly, baking the substrate 101 In a high temperature environment of 1300 ℃ In an MOCVD reaction furnace, removing foreign matters on the surface of the substrate 101, and then growing a GaN buffer layer 102, an epitaxial AlN/GaN DBR103, an N-type GaN semiconductor transmission layer 104, an InGaN electron deceleration layer 105, and 10 pairs of In respectively_0.07Ga_0.93N/GaN MQW layer 106, P-type Al_0.09Ga_0.91The doping concentration of the N electron blocking layer, the P-type GaN semiconductor transmission layer 108 and the P-type GaN heavily doped semiconductor transmission layer 109 is 5e25m 3; the InGaN electron deceleration layer 105 had an In doping of 0.2 and a thickness of 20 nm.

Example four:

the difference between this embodiment and the embodiment is that the InGaN electron deceleration layer 105 has an In doping of 0.1 and a thickness of 10 nm.

The above differences are adjusted in the first step when preparing a VCSEL laser, as compared to the first step of the second embodiment, as follows:

firstly, baking the substrate 101 In a high temperature environment of 1300 ℃ In an MOCVD reaction furnace, removing foreign matters on the surface of the substrate 101, and then growing a GaN buffer layer 102, an epitaxial AlN/GaN DBR103, an N-type GaN semiconductor transmission layer 104, an InGaN electron deceleration layer 105, and 10 pairs of In respectively_0.07Ga_0.93N/GaN MQW layer 106, P-type Al_0.09Ga_0.91The doping concentration of the N electron blocking layer, the P-type GaN semiconductor transmission layer 108 and the P-type GaN heavily doped semiconductor transmission layer 109 is 5e25m 3; the InGaN electron deceleration layer 105 had an In doping of 0.1 and a thickness of 10 nm.

In summary, due to the adoption of the technical scheme, compared with the prior art, the utility model has the following substantive characteristics and progresses, and the beneficial effects of the utility model are as follows:

The devices and connection relationships that are not described in detail above all belong to the prior art, and the present invention is not described in detail herein.

The standard parts used in the application document can be purchased from the market, and can be customized according to the description of the specification and the description of the attached drawings, the specific connection mode of each part adopts conventional means such as mature bolts, rivets, welding and the like in the prior art, and machines, parts and equipment adopt conventional models in the prior art.

The preferred embodiments of the present invention have been described in detail with reference to the accompanying drawings, but the present invention is not limited to the details of the above embodiments, and various simple modifications can be made to the technical solution of the present invention within the technical idea of the present invention, and these simple modifications are included in the scope of protection of the present invention.

It should be noted that, in the foregoing embodiments, various features described in the above embodiments may be combined in any suitable manner, and in order to avoid unnecessary repetition, various combinations that are possible in the present application will not be described separately.

In addition, any combination of the various embodiments of the present application can be made, and the present application should be considered as disclosed in the present application as long as the combination does not depart from the spirit of the present application.

Claims

1. A VCSEL laser with an InGaN electronic deceleration layer comprises a substrate (101), wherein a buffer layer (102), a nitride epitaxy DBR (103) and an N-type semiconductor transmission layer (104) are sequentially arranged on the substrate (101), and is characterized in that the N-type semiconductor transmission layer (104) is sequentially provided with an N-type InGaN electronic deceleration layer (105), a multi-quantum well layer (106), a P-type electronic barrier layer (107), a P-type semiconductor transmission layer (108) and a P-type heavily doped semiconductor transmission layer (109), a current limiting hole (110) is formed in the P-type heavily doped semiconductor transmission layer (109), a current expansion layer (111) covers the P-type heavily doped semiconductor transmission layer (109) and the current limiting hole (110), a medium DBR (112) and a P-type ohmic electrode (113) are arranged on the upper portion of the current expansion layer (111), the N-type semiconductor transmission layer (104), the N-type InGaN electronic deceleration layer (105), the multi-quantum well layer (106), the P-type electronic barrier layer (107), the P-type semiconductor transmission layer (108), the P-type heavily doped semiconductor transmission layer (109), the current limiting hole (110) and the current expansion layer (111) form a shoulder, the bottom of the shoulder extends to the inside of the N-type semiconductor transmission layer (104), and an N-type ohmic electrode (114) is arranged on the exposed N-type semiconductor transmission layer (104).

2. A VCSEL laser with InGaN electron deceleration layer according to claim 1, wherein the projected area of the N-type InGaN electron deceleration layer (105) on the N-type semiconductor transmission layer (104) is 60-80% of the maximum area of the N-type semiconductor transmission layer (104).

3. A VCSEL laser with InGaN electronic deceleration layer according to claim 1, characterized in that the current confinement hole (110) is a ring-shaped insulating layer.

4. A VCSEL laser with InGaN electronic deceleration layer as claimed in claim 3, wherein the insulating layer is made of Si₃N₄、Ta₂O₅、SiO₂Wherein the thickness of the one of the two layers is 10-100 nm, and the width of the ring of the annular insulating layer is 1-10 μm.

5. A VCSEL laser with InGaN electronic deceleration layer according to claim 1, wherein the projected area of the dielectric DBR (112) on the current spreading layer (111) is 0.5-0.9 times the area of the current spreading layer.

6. A VCSEL laser with InGaN electronic deceleration layers according to claim 1, wherein the materials of the nitride epitaxy DBR (103) and the dielectric DBR (112) are alternated by high and low refractive index materials, and the thicknesses of the nitride epitaxy DBR (103) and the dielectric DBR (112) are respectively a quarter of the wavelength of the desired light emission wavelength in the dielectric.

7. A VCSEL laser with InGaN electronic deceleration layer according to claim 1, characterized in that the material of the current spreading layer (111) is ITO, Ni/Au, zinc oxide, graphene, aluminum or metal nanowires, and the thickness of the current spreading layer (111) is 10 nm-100 nm.

8. A VCSEL laser with InGaN electron deceleration layer according to claim 1, wherein the P-type ohmic electrode (113) is made of Ni/Au, Cr/Au, Pt/Au, Ni/Al, and the projected area of the P-type ohmic electrode (113) is 5% to 100% of the area of the current spreading layer (111).

9. A VCSEL laser with InGaN electron deceleration layer according to claim 1, wherein the N-type ohmic electrode (114) is made of Al/Au or Cr/Au, and the projected area of the N-type ohmic electrode (114) is 5-100% of the exposed area of the N-type semiconductor transmission layer (104).