CN216850342U - Molybdenum disulfide-based broadband adjustable terahertz wave absorber - Google Patents
Molybdenum disulfide-based broadband adjustable terahertz wave absorber Download PDFInfo
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- CN216850342U CN216850342U CN202220131724.XU CN202220131724U CN216850342U CN 216850342 U CN216850342 U CN 216850342U CN 202220131724 U CN202220131724 U CN 202220131724U CN 216850342 U CN216850342 U CN 216850342U
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Abstract
The utility model provides a broadband adjustable terahertz wave absorber based on molybdenum disulfide, which is provided with a molybdenum disulfide array layer, a middle medium layer and a metal layer from the top to the bottom in sequence; the molybdenum disulfide array layer is composed of a plurality of molybdenum disulfide units which are periodically arranged according to a regular pattern, and the molybdenum disulfide array layer presents the metalloid property of molybdenum disulfide under the condition of high carrier concentration and has high absorptivity to incident terahertz waves of a specific frequency band; the utility model discloses replace traditional metal super surperficial wave-absorbing device design with two-dimensional material, realized the adjustable absorption of broadband to terahertz wave, simple structure, modulation function are excellent, the absorption bandwidth is extremely wide, insensitive to incident angle and polarization.
Description
Technical Field
The utility model belongs to the technical field of terahertz frequency channel is inhaled ripples field now, especially because molybdenum disulfide's adjustable terahertz of broadband inhales ripples ware now.
Background
Terahertz (THz) waves are electromagnetic waves having a frequency band of about 0.1 to 10 THz. With the continuous development of emerging terahertz science and technology, new applications including broadband communication, radar detection, medical imaging, nondestructive testing, safety inspection and the like have been extended. Because the terahertz frequency band contains richer frequency information and can be used for detecting smaller targets, the development of the wave absorbing device special for absorbing terahertz waves is very important.
Molybdenum disulfide is a transition metal disulfide commonly found in natural molybdenite, a single-layer molybdenum disulfide two-dimensional structure can be extracted from a massive molybdenum disulfide crystal through simple mechanical stripping and other modes, and the molybdenum disulfide has unique two-dimensional material properties including non-zero natural band gap, circularly polarized light selectivity, valley Hall effect and the like. Due to the excellent photoelectric characteristics of the single-layer molybdenum disulfide, the single-layer molybdenum disulfide is widely applied to the research of electromagnetic wave absorption.
The traditional terahertz wave absorber generally utilizes a patterned structure on the metal super surface to be coupled with a metal layer at the bottom, so that the electromagnetic field local area of incident terahertz waves is realized, and the absorption of the terahertz waves is enhanced. However, once the structural parameters are specified in the design, the wave absorbing performance of the terahertz wave absorber is already determined, and the broadband absorption cannot be achieved generally. The utility model discloses a adjust and control individual layer molybdenum disulfide's carrier concentration and conductivity based on electrostatic doping to overlay the super surface of patterned molybdenum disulfide at the structure top layer, accomplish this terahertz wave absorber's processing now, finally can realize absorbing incident terahertz wave's broadband. The broadband adjustable terahertz wave absorber based on molybdenum disulfide has potential application value in the aspects of radar communication, near-field imaging, sensing detection and the like.
Disclosure of Invention
The utility model provides an absorption performance adjustment method of adjustable terahertz wave-absorbing ware of broadband based on molybdenum disulfide replaces the wave-absorbing ware design of traditional metal super surface with two-dimensional material, has realized the adjustable absorption of broadband to terahertz wave, and simple structure, modulation function are excellent, the absorption bandwidth is extremely wide, insensitive to incident angle and polarization.
The utility model adopts the following technical scheme.
The terahertz wave absorber is adjustable in broadband based on molybdenum disulfide, and a molybdenum disulfide array layer (1), a middle dielectric layer (2) and a metal layer (3) are sequentially arranged from the top to the bottom of the wave absorber; the molybdenum disulfide array layer is composed of a plurality of molybdenum disulfide units which are periodically arranged according to a regular pattern, exhibits the metal-like property of molybdenum disulfide under high carrier concentration, and has high absorptivity to incident terahertz waves of a specific frequency band.
The molybdenum disulfide units are attached to the intermediate medium layer in a row-by-row mode with the arrangement period ofp x= p y And the molybdenum disulfide unit comprises a molybdenum disulfide subunit of a circular ring pattern and a molybdenum disulfide subunit of a cross-shaped pattern positioned in the middle of the circular ring pattern, and the molybdenum disulfide subunit of the circular ring pattern and the molybdenum disulfide subunit of the cross-shaped pattern are positioned in the same plane and are aligned through a geometric center.
The outer diameter of the circular ring pattern isr 1= 20 μm, inner diameterr 2= 16 μm; the long side of the cross-shaped pattern isc 1= 30 μm, short sidec 2 = 2 μm。
The molybdenum disulfide array layer is of a single-layer molybdenum disulfide structure, the height of the molybdenum disulfide array layer is the thickness of the single-layer molybdenum disulfide structure, and the thickness is about 0.65 nm.
The middle dielectric layer is a cycloolefin copolymer of TOPAS material, the dielectric constant is 2.35, and the height ish = 26 μm。
The metal layer is gold element with the conductivity of 5.9 multiplied by 107S/m, the thickness is 0.2 μm, and the metal layer meets the skin depth requirement of the substrate and can prevent terahertz waves from transmitting.
The perfect working frequency band of the terahertz wave absorber is a frequency band with the absorption rate of more than 90%, the range is 1.2-2.67 THz, and the relative absorption bandwidth is 76.0%.
According to the preparation method of the broadband-adjustable terahertz wave absorber based on molybdenum disulfide, the single-layer molybdenum disulfide structure is extracted from massive molybdenum disulfide crystals by a mechanical stripping method.
The absorption performance adjusting method of the terahertz wave absorber based on molybdenum disulfide enables the absorption performance of the wave absorber to be adjusted within a range of zero absorption to complete absorption by changing the concentration of molybdenum disulfide carriers in a molybdenum disulfide array layer.
Compared with the prior art, the utility model discloses following beneficial effect has: according to the broadband adjustable terahertz wave absorber based on molybdenum disulfide, the traditional metal super-surface for the terahertz wave absorber is innovatively replaced by the electrostatically-doped single-layer patterned molybdenum disulfide, and the perfect absorption of incident terahertz waves (the absorption rate is more than 90%) is realized in a specific frequency band by utilizing the metal-like property of the molybdenum disulfide under the condition of high carrier concentration. In addition, by changing the carrier concentration of the molybdenum disulfide, the absorption performance of the wave absorber can be adjusted, and even the conversion from zero absorption to complete absorption is realized.
In the scheme of the utility model, to the incident condition (incident angle and phase place) of difference, this terahertz wave-absorbing device can both keep higher absorption level under most circumstances.
The terahertz wave absorber has the advantages of simple structure, excellent modulation performance, extremely wide absorption bandwidth, insensitivity to incident angle and polarization, and potential application value in the aspect of researching the terahertz wave absorber with high performance; the terahertz wave absorption material is suitable for the terahertz wave absorption application occasions including military radars, wireless communication, near-field imaging and the like.
Drawings
The invention will be described in further detail with reference to the following drawings and detailed description:
figure 1 is a schematic top view of a molybdenum disulfide unit of the present invention;
fig. 2 is a schematic structural diagram of the present invention;
FIG. 3 is a schematic diagram of the absorption spectra of the present invention under different carrier concentrations;
FIG. 4 is a schematic diagram of the absorption heat map of the present invention under the condition of transverse electric waves incident at different angles;
FIG. 5 is a schematic diagram of the absorption heat map of the present invention under the condition of transverse magnetic waves incident at different angles;
FIG. 6 is a schematic diagram of the absorption heat map of the present invention under incident wave conditions of different phase angles;
in the figure: 1-a molybdenum disulfide array layer; 2-an intermediate dielectric layer; 3-metal layer.
Detailed Description
As shown in the figure, a molybdenum disulfide array layer 1, a middle medium layer 2 and a metal layer 3 are sequentially arranged on a molybdenum disulfide-based broadband adjustable terahertz wave absorber from the top to the bottom of the wave absorber; the molybdenum disulfide array layer is composed of a plurality of molybdenum disulfide units which are periodically arranged according to a regular pattern, and the molybdenum disulfide array layer presents the metalloid property of molybdenum disulfide under the condition of high carrier concentration and has high absorptivity to incident terahertz waves of a specific frequency band.
The molybdenum disulfide units are attached to the intermediate medium layer in a row-by-row mode with the arrangement period ofp x = p y And the molybdenum disulfide unit comprises a molybdenum disulfide subunit of a circular ring pattern and a molybdenum disulfide subunit of a cross-shaped pattern positioned in the middle of the circular ring pattern, and the molybdenum disulfide subunit of the circular ring pattern and the molybdenum disulfide subunit of the cross-shaped pattern are positioned in the same plane and are aligned through a geometric center.
The outer diameter of the circular ring pattern isr 1= 20 μm, inner diameterr 2= 16 μm; the long side of the cross-shaped pattern isc 1= 30 μm, short sidec 2 = 2 μm。
The molybdenum disulfide array layer is of a single-layer molybdenum disulfide structure, the height of the molybdenum disulfide array layer is the thickness of the single-layer molybdenum disulfide structure, and the thickness is about 0.65 nm.
The middle dielectric layer is a cycloolefin copolymer of TOPAS material, the dielectric constant is 2.35, and the height ish = 26 μm。
The metal layer is gold element with the conductivity of 5.9 multiplied by 107S/m, the thickness is 0.2 μm, and the metal layer meets the skin depth requirement of the substrate and can prevent terahertz waves from transmitting.
The perfect working frequency band of the terahertz wave absorber is a frequency band with the absorption rate of more than 90%, the range is 1.2-2.67 THz, and the relative absorption bandwidth is 76.0%.
According to the preparation method of the broadband-adjustable terahertz wave absorber based on molybdenum disulfide, the single-layer molybdenum disulfide structure is extracted from massive molybdenum disulfide crystals by a mechanical stripping method.
The absorption performance adjusting method of the terahertz wave absorber based on molybdenum disulfide enables the absorption performance of the wave absorber to be adjusted within a range of zero absorption to complete absorption by changing the concentration of molybdenum disulfide carriers in a molybdenum disulfide array layer.
Example (b):
as shown in fig. 1 and 2, the broadband-adjustable terahertz wave absorber based on molybdenum disulfide comprises a patterned molybdenum disulfide array layer 1, a middle dielectric layer 2 and a metal layer 3 in sequence from top to bottom. A patterned molybdenum disulfide array 1 doped with static electricity is attached to the upper portion of a middle medium layer 2 which is made of TOPAS materials and has the thickness of 26 microns, and a metal layer 3 with the thickness of 0.2 micron is covered on the lower portion of the medium layer to serve as a substrate, so that the terahertz wave absorber is formed to achieve the function of adjustable wave absorption of broadband. As shown in the figure, the patterned molybdenum disulfide array layer 1 is composed of a plurality of molybdenum disulfide units in a circular ring pattern and a cross-shaped pattern which are periodically arranged, and the period of the arrangement isp x = p y= 60 μm; the outer diameter of the annular pattern isr 1= 20 μm, inner diameterr 2= 16 μm; the long side of the cross pattern isc 1= 30 μm, short sidec 2 = 2 μm。
As shown in fig. 3, the curves in different line forms respectively show the absorption rates of the absorber at different thz frequencies under the conditions of no doping and different carrier concentrations of the molybdenum disulfide. As can be seen from the figure, under the condition that molybdenum disulfide is not coated, the absorption rate of the wave absorber to terahertz waves is almost 0; along with the continuous increase of the carrier concentration, the absorption rate of the wave absorber under a certain frequency is gradually increased; when the carrier concentration reachesn = 1×1015 cm-2In the process, the absorption rate of the wave absorber under the frequency of 1.2-2.67 THz reaches perfect absorption (the absorption rate is more than 90%), and the relative absorption bandwidth is up to 76%. Therefore, the conversion from zero absorption to broadband perfect absorption can be realized by effectively adjusting the carrier concentration of the molybdenum disulfide, and the terahertz wave absorber has good modulation depth.
As shown in fig. 4 and 5, the wave absorbing device has good absorption rate for both the incident conditions of transverse electric wave and transverse magnetic wave. Under the condition of transverse electric waves, the wave absorber keeps more than 70% of absorption rate within 40 degrees of an incident angle; under the condition of transverse magnetic waves, the wave absorber also keeps high absorption rate within 60 degrees of an incident angle. The result fully shows that the terahertz wave absorbing device has good high tolerance to an incident angle, and can meet the requirements of practical application scenes.
As shown in fig. 6, the broadband absorption characteristics of the terahertz wave absorber at different phase angles remain unchanged, which fully illustrates that the terahertz wave absorber has polarization insensitivity.
Claims (7)
1. Molybdenum disulfide-based broadband adjustable terahertz wave absorber is characterized in that: the wave absorber is sequentially provided with a molybdenum disulfide array layer (1), a middle medium layer (2) and a metal layer (3) from the top to the bottom; the molybdenum disulfide array layer is composed of a plurality of molybdenum disulfide units which are periodically arranged according to a regular pattern, and the molybdenum disulfide array layer presents the metalloid property of molybdenum disulfide under the condition of high carrier concentration and has high absorptivity to incident terahertz waves of a preset frequency band.
2. The molybdenum disulfide-based broadband tunable terahertz wave absorber according to claim 1, wherein: the molybdenum disulfide units are attached to the intermediate medium layer in a row-by-row mode with the arrangement period ofp x= p yAnd the molybdenum disulfide unit comprises a molybdenum disulfide subunit of a circular ring pattern and a molybdenum disulfide subunit of a cross-shaped pattern positioned in the middle of the circular ring pattern, and the molybdenum disulfide subunit of the circular ring pattern and the molybdenum disulfide subunit of the cross-shaped pattern are positioned in the same plane and are aligned through a geometric center.
3. The molybdenum disulfide-based broadband tunable terahertz wave absorber according to claim 2, wherein: the outer diameter of the circular ring pattern isr 1= 20 μm, inner diameterr 2= 16 μm; the long side of the cross-shaped pattern isc 1= 30 μm, short sidec 2 = 2 μm。
4. The molybdenum disulfide-based broadband tunable terahertz wave absorber according to claim 2, wherein: the molybdenum disulfide array layer is of a single-layer molybdenum disulfide structure, and the height of the molybdenum disulfide array layer is the thickness of the single-layer molybdenum disulfide structure and is about 0.65 nm.
5. The molybdenum disulfide-based broadband tunable terahertz wave absorber according to claim 1, wherein: the middle dielectric layer is a cycloolefin copolymer of TOPAS material, the dielectric constant is 2.35, and the height ish = 26 μm。
6. The molybdenum disulfide-based broadband tunable terahertz wave absorber according to claim 1, wherein: the metal layer is gold element with the conductivity of 5.9 multiplied by 107S/m, the thickness is 0.2 μm, and the metal layer meets the skin depth requirement of the substrate and can prevent terahertz waves from transmitting.
7. The molybdenum disulfide-based broadband tunable terahertz wave absorber according to claim 1, wherein: the perfect working frequency band of the terahertz wave absorber is a frequency band with the absorption rate of more than 90%, the range is 1.2-2.67 THz, and the relative absorption bandwidth is 76.0%.
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