CN216773242U - Photoetching alignment mark pattern structure and semiconductor wafer - Google Patents

Photoetching alignment mark pattern structure and semiconductor wafer Download PDF

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Publication number
CN216773242U
CN216773242U CN202220533150.9U CN202220533150U CN216773242U CN 216773242 U CN216773242 U CN 216773242U CN 202220533150 U CN202220533150 U CN 202220533150U CN 216773242 U CN216773242 U CN 216773242U
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groove
grooves
alignment mark
body group
group
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Chinese (zh)
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张曼
黄浩玮
吴秋果
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Nexchip Semiconductor Corp
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Nexchip Semiconductor Corp
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Abstract

The utility model provides a photoetching alignment mark graphic structure, which comprises at least one group of groove body groups, wherein the groove body groups are arranged on the surface of a wafer, and the single group of groove body groups comprises a plurality of positioning grooves; the positioning grooves in the single groove body group are parallel to each other, and the middle parts of the positioning grooves are outwards protruded. The photoetching alignment mark graph structure disclosed by the utility model can effectively reduce the profile distortion generated in the epitaxial growth process, thereby improving the alignment precision.

Description

Photoetching alignment mark pattern structure and semiconductor wafer
Technical Field
The utility model relates to the technical field of semiconductor epitaxial growth, in particular to a photoetching alignment mark pattern structure and a semiconductor wafer.
Background
The photolithography alignment mark structure is used to define the position and direction between the mask and the wafer, and plays a key role in the manufacturing process of the wafer. In the preparation of high-voltage or high-power devices, an epitaxial layer growth technology is generally adopted to meet the requirement, and in the epitaxial growth process, the temperature or the epitaxial growth rate can influence the photoetching alignment mark structure to generate deformation and profile distortion, so that the profile distortion is generated. When the profile of the photoetching alignment mark structure is distorted, the alignment precision can be seriously influenced, so that the quality of a product is influenced.
SUMMERY OF THE UTILITY MODEL
In view of the above-mentioned shortcomings of the prior art, it is an object of the present invention to provide a lithographic alignment mark pattern structure and a semiconductor wafer, which can effectively reduce the profile distortion generated during the epitaxial growth process, thereby improving the alignment accuracy.
To achieve the above and other related objects, the present invention provides a lithographic alignment mark pattern structure, including:
the groove body group is arranged on the surface of the wafer, and the single groove body group comprises a plurality of positioning grooves;
the positioning grooves in the single groove body group are parallel to each other, and the middle parts of the positioning grooves are in a shape protruding outwards.
In an embodiment of the present invention, when the number of the slot body groups is greater than one, the multiple slot body groups include a first slot body group, a second slot body group, a third slot body group, and a fourth slot body group, each of the first slot body group, the second slot body group, the third slot body group, and the fourth slot body group includes at least one positioning groove, and the first slot body group, the second slot body group, the third slot body group, and the fourth slot body group are distributed in a rectangular shape.
In an embodiment of the present invention, the first groove body group includes two positioning grooves, the positioning grooves are first grooves, and the first grooves include a first groove, a second groove, and a third groove that are connected in sequence.
In an embodiment of the utility model, the second groove body group includes two positioning grooves, the positioning grooves are second grooves, and the second grooves include a first groove, a second groove and a third groove which are connected in sequence.
In an embodiment of the utility model, the third groove body group includes two positioning grooves, the positioning grooves are third grooves, and the third grooves include a first connecting groove, a second connecting groove and a third connecting groove which are connected in sequence.
In an embodiment of the utility model, the fourth groove body group includes two positioning grooves, each positioning groove is a fourth groove, and each fourth groove includes a first communicating groove, a second communicating groove and a third communicating groove which are sequentially connected.
In an embodiment of the utility model, when the number of the groove body groups is one, the plurality of positioning grooves are four fifth grooves and two sixth grooves respectively, the four fifth grooves and the two sixth grooves are integrally distributed in a strip shape, and the two sixth grooves are located on two sides of the four fifth grooves respectively.
In an embodiment of the present invention, the fifth groove includes a first inner groove, a second inner groove, and a third inner groove connected in sequence.
In an embodiment of the present invention, the sixth groove includes a first outer groove, a second outer groove, and a third outer groove connected in sequence.
The present invention also provides a semiconductor wafer comprising:
a wafer;
the photoetching alignment mark graph structure is arranged on the surface of the wafer; and
the epitaxial layer covers the wafer and the photoetching alignment mark pattern structure;
wherein, the photoetching alignment mark pattern structure comprises:
the groove body group is arranged on the surface of the wafer, and the single groove body group comprises a plurality of positioning grooves;
the positioning grooves in the single groove body group are parallel to each other, and the middle parts of the positioning grooves are in a shape protruding outwards.
As described above, the present invention provides a lithographic alignment mark pattern structure and a semiconductor wafer, in which an epitaxial layer is uniformly covered in the lithographic alignment mark pattern structure during an epitaxial growth process, so that profile distortion generated during the epitaxial growth process can be effectively reduced, thereby improving alignment accuracy and improving product quality to a certain extent.
Drawings
In order to more clearly illustrate the technical solutions of the embodiments of the present invention, the drawings used in the description of the embodiments will be briefly introduced below, and it is obvious that the drawings in the following description are only some embodiments of the present invention, and it is obvious for those skilled in the art that other drawings can be obtained according to the drawings without creative efforts.
FIG. 1 is a schematic structural diagram of a lithographic alignment mark pattern structure according to the present invention.
Fig. 2 is a schematic structural diagram of fig. 1 from another view angle.
Fig. 3 is shown in a front view of fig. 1.
FIG. 4 is a schematic structural diagram of another structure of a lithographic alignment mark pattern structure according to the present invention.
Fig. 5 is a schematic structural diagram of fig. 4 from another view angle.
Fig. 6 is shown in a front view in fig. 3.
Element number description:
10. a wafer;
20. a first groove; 21. a first trench; 22. a second trench; 23. a third trench;
30. a second groove; 31. a first groove; 32. a second groove; 33. a third groove;
40. a third groove; 41. a first connecting groove; 42. a second connecting groove; 43. a third connecting groove;
50. a fourth groove; 51. a first connecting groove; 52. a second communicating groove; 53. a third communicating groove;
60. a fifth groove; 61. a first inner tank; 62. a second inner tank; 63. a third inner tank;
70. a sixth groove; 71. a first outer tank; 72. a second outer tank; 73. and a third outer tank.
Detailed Description
The technical solutions in the embodiments of the present invention will be clearly and completely described below with reference to the drawings in the embodiments of the present invention, and it is obvious that the described embodiments are only a part of the embodiments of the present invention, and not all of the embodiments. All other embodiments, which can be derived by a person skilled in the art from the embodiments given herein without making any creative effort, shall fall within the protection scope of the present invention.
Please refer to fig. 1-6. It should be noted that the drawings provided in the present embodiment are only for illustrating the basic idea of the present invention, and the components related to the present invention are only shown in the drawings rather than drawn according to the number, shape and size of the components in actual implementation, and the type, quantity and proportion of the components in actual implementation may be changed freely, and the layout of the components may be more complicated.
Referring to fig. 1 and 4, the present invention provides a lithographic alignment mark pattern structure, which can be applied to a wafer 10. Wafer 10 refers to a wafer used to fabricate semiconductor circuits, and may be made of silicon or other semiconductor materials. The photolithographic alignment mark pattern structure is a visible pattern structure which is arranged on the mask plate and the wafer and is used for determining the position and the direction of the mask plate and the wafer. The photolithography alignment mark pattern structure may include at least one groove group, and the groove group may include at least one positioning groove. Therefore, when the number of the groove body groups is multiple, the groove body groups are mutually matched to enable the photoetching alignment mark graph structure to be in a rectangular shape, and when the number of the groove body groups is one, the positioning grooves are mutually matched to enable the photoetching alignment mark graph structure to be in a strip shape. Wherein, the positioning groove may be in a shape that the middle portion protrudes outward.
Referring to fig. 1 and 2, in an embodiment of the utility model, when the number of the slot body groups is multiple, the multiple slot body groups cooperate with each other to make the photolithography alignment mark pattern structure take a rectangular shape. At this time, the tank body group may include a first tank body group, a second tank body group, a third tank body group, and a fourth tank body group. The first trough body group, the second trough body group, the third trough body group and the fourth trough body group can be respectively located on four edges of the rectangle. One end of the first tank body group can be positioned on one side close to the end point of the rectangle, and the first tank body group can also be positioned on one side of the center of the side of the rectangle. One end of the second tank body group can be positioned on one side close to the end point of the rectangle, and the second tank body group can also be positioned on one side of the center of the side of the rectangle. One end of the third tank body group can be positioned on one side close to the end point of the rectangle, and the third tank body group can also be positioned on one side of the center of the side of the rectangle. One end of the fourth tank body group can be positioned on one side close to the end point of the rectangle, and the fourth tank body group can also be positioned on one side of the center of the side of the rectangle. The specific distribution positions of the first tank body group, the second tank body group, the third tank body group and the fourth tank body group may not be limited as long as the first tank body group, the second tank body group, the third tank body group and the fourth tank body group are respectively located on four edges of the rectangle. The depth of the groove body group is not limited, and can be in the range of 0.5-1 um, for example, 0.5um, also for example, 0.7um, and also for example, 1 um. In this embodiment, optionally, the depth of the groove set may be, for example, 0.7 um.
Referring to fig. 3, in an embodiment of the utility model, the distance between the first tank group and the third tank group is not limited, and may be in a range of 20 to 30um, for example, 20um, or 26um, or 30 um. The size of the distance between the first tank body group and the third tank body group can be set according to actual requirements, and in the embodiment, the size of the distance between the first tank body group and the third tank body group can be selected to be, for example, 26 um. The distance between the second trough body group and the fourth trough body group is not limited, and can be in the range of 20-30 um, such as 20um, 26um, or 30 um. The distance between the second trough body group and the fourth trough body group can be set according to actual requirements, and in the embodiment, the distance between the second trough body group and the fourth trough body group can be selected to be 26um, for example.
Referring to fig. 3, in an embodiment of the present invention, the first groove body group may at least include a group of positioning grooves, and the positioning grooves in the first groove body group may be the first grooves 20. The second groove body group can at least comprise a group of positioning grooves, and the positioning grooves in the second groove body group can be the second grooves 30. The third slot set may at least include a set of positioning slots, and the positioning slots in the third slot set may be the third slots 40. The fourth groove body group can at least comprise a group of positioning grooves, and the positioning grooves in the fourth groove body group can be the fourth grooves 50.
Referring to fig. 3, in an embodiment of the present invention, the number of the first grooves 20 may be not limited, and may be one group, two groups, three groups, and the like. In this embodiment, the number of the first grooves 20 may be, for example, two groups, and the two groups of the first grooves 20 may be arranged in parallel with each other. The distance between the two sets of first grooves 20 is not limited, and may be in the range of 2 to 4um, for example, 2um, 3um, or 4 um. The size of the space between the two sets of first grooves 20 can be set according to actual requirements, and in this embodiment, optionally, the size of the space between the two sets of first grooves 20 can be, for example, 3 um.
Referring to fig. 3, in an embodiment of the present invention, the first trench 20 may include a first trench 21, a second trench 22 and a third trench 23. Here, the first groove 21 may communicate with one end of the second groove 22, and the other end of the second groove 22 may communicate with the third groove 23, so that the first groove 21 and the third groove 23 may be respectively located at both ends of the second groove 22. At the junction of the first groove 21 and the second groove 22, the length of the connecting side of the first groove 21 is smaller than the length of the connecting side of the second groove 22. At the junction of the third groove 23 and the second groove 22, the length of the connecting side of the third groove 23 is smaller than the length of the connecting side of the second groove 22.
Referring to fig. 3, in an embodiment of the present invention, the shape of the first trench 21 may be not limited, and may be rectangular, or may be other shapes. When the first trench 21 is rectangular, the length thereof is not limited, and may be in a range of 2 to 3um, for example, 2um, 2.5um, or 3 um. The width of the first trench 21 is not limited, and may be in the range of 1 to 3um, for example, 1um, 2um, or 3 um. In this embodiment, optionally, the length of the first trench 21 may be, for example, 2.5um, and the width may be, for example, 2 um.
Referring to fig. 3, in an embodiment of the present invention, the shape of the second trench 22 may be not limited, and may be rectangular, or may be other shapes. When the second trench 22 is rectangular, the length thereof is not limited, and may be in the range of 16 to 20um, for example, 16um, 18um, or 20 um. The width of the second trench 22 is not limited, and may be in the range of 3 to 5um, for example, 3um, 4um, or 5 um. In the present embodiment, the length of the second trench 22 may be, for example, 18um, and the width may be, for example, 4 um.
Referring to fig. 3, in an embodiment of the present invention, the shape of the third trench 23 may be not limited, and may be rectangular, or may be other shapes. When the third trench 23 is rectangular, the length thereof is not limited, and may be in a range of 2 to 3um, for example, 2um, 2.5um, or 3 um. The width of the third trench 23 is not limited, and may be in the range of 1 to 3um, for example, 1um, 2um, or 3 um. In this embodiment, optionally, the length of the third trench 23 may be, for example, 2.5um, and the width may be, for example, 2 um.
Referring to fig. 3, in an embodiment of the utility model, the number of the second grooves 30 may be unlimited, and may be one group, two groups, three groups, and the like. In this embodiment, the number of the second grooves 30 may be two, and the two sets of the second grooves 30 may be arranged in parallel. The distance between two sets of second grooves 30 is not limited, and can be in the range of 2-4 um, such as 2um, 3um, or 4 um. The size of the space between the two sets of second grooves 30 can be set according to actual requirements, and in this embodiment, optionally, the size of the space between the two sets of second grooves 30 can be, for example, 3 um.
Referring to fig. 3, in an embodiment of the present invention, the second groove 30 may include a first groove 31, a second groove 32, and a third groove 33. The first groove 31 may communicate with one end of the second groove 32, and the other end of the second groove 32 may communicate with the third groove 33, so that the first groove 31 and the third groove 33 may be respectively located at two ends of the second groove 32. At the connection of the first groove 31 and the second groove 32, the length of the connection side of the first groove 31 is smaller than the length of the connection side of the second groove 32. At the connection of the third groove 33 and the second groove 32, the length of the connection side of the third groove 33 is smaller than the length of the connection side of the second groove 32.
Referring to fig. 3, in an embodiment of the present invention, the shape of the first groove 31 may be not limited, and may be rectangular, or may be other shapes. When the first groove 31 is rectangular, the length thereof is not limited, and may be in a range of 2 to 3um, for example, 2um, 2.5um, or 3 um. The width of the first groove 31 is not limited, and may be in the range of 1 to 3um, for example, 1um, 2um, or 3 um. In this embodiment, optionally, the length of the first groove 31 may be, for example, 2.5um, and the width may be, for example, 2 um.
Referring to fig. 3, in an embodiment of the utility model, the shape of the second groove 32 may be not limited, and may be rectangular, or may be other shapes. When the second groove 32 is rectangular, the length thereof may not be limited, and may be in a range of 16 to 20um, for example, 16um, 18um, or 20 um. The width of the second groove 32 is not limited, and may be in the range of 3 to 5um, for example, 3um, 4um, or 5 um. In this embodiment, the length of the second groove 32 may be, for example, 18um, and the width may be, for example, 4 um.
Referring to fig. 3, in an embodiment of the present invention, the shape of the third groove 33 may be not limited, and may be rectangular, or may be other shapes. When the third groove 33 is rectangular, the length thereof is not limited, and may be in a range of 2 to 3um, for example, 2um, 2.5um, or 3 um. The width of the third groove 33 is not limited, and may be in the range of 1 to 3um, for example, 1um, 2um, or 3 um. In this embodiment, optionally, the length of the third groove 33 may be, for example, 2.5um, and the width may be, for example, 2 um.
Referring to fig. 3, in an embodiment of the present invention, the number of the third slots 40 may be not limited, and may be one group, two groups, three groups, and the like. In this embodiment, the number of the third grooves 40 may be two, and the two sets of the third grooves 40 may be arranged in parallel. The distance between the two sets of third grooves 40 is not limited, and may be in the range of 2 to 4um, for example, 2um, 3um, or 4 um. The size of the space between the two sets of third grooves 40 can be set according to actual requirements, and in this embodiment, optionally, the size of the space between the two sets of third grooves 40 can be, for example, 3 um.
Referring to fig. 3, in an embodiment of the present invention, the third groove 40 may include a first connecting groove 41, a second connecting groove 42 and a third connecting groove 43. Here, the first connection groove 41 may be in communication with one end of the second connection groove 42, and the other end of the second connection groove 42 may be in communication with the third connection groove 43, so that the first connection groove 41 and the third connection groove 43 may be respectively located at both ends of the second connection groove 42. At the connection of the first connection groove 41 and the second connection groove 42, the length of the connection side of the first connection groove 41 is smaller than the length of the connection side of the second connection groove 42. At the connection of the third connection groove 43 and the second connection groove 42, the length of the connection side of the third connection groove 43 is smaller than that of the second connection groove 42.
Referring to fig. 3, in an embodiment of the present invention, the shape of the first connecting groove 41 may be not limited, and may be rectangular, or may be other shapes. When the first connecting slot 41 is rectangular, the length thereof is not limited, and may be in the range of 2-3 um, for example, 2um, 2.5um, or 3 um. The width of the first connecting slot 41 is not limited, and may be, for example, in the range of 1 to 3um, and may be, for example, 1um, or, for example, 2um, or, for example, 3 um. In this embodiment, optionally, the length of the first connecting slot 41 may be, for example, 2.5um, and the width may be, for example, 2 um.
Referring to fig. 3, in an embodiment of the present invention, the shape of the second connecting groove 42 may be not limited, and may be rectangular, or may be other shapes. When the second connecting groove 42 is rectangular, the length thereof is not limited, and may be in the range of 16 to 20um, for example, 16um, 18um, or 20 um. The width of the second connecting groove 42 is not limited, and may be in the range of 3 to 5um, for example, 3um, 4um, or 5 um. In this embodiment, the length of the second connecting groove 42 may be, for example, 18um, and the width may be, for example, 4 um.
Referring to fig. 3, in an embodiment of the utility model, the shape of the third connecting groove 43 may be not limited, and may be rectangular, or may be other shapes. When the third connecting groove 43 is rectangular, the length thereof is not limited, and may be in the range of 2 to 3um, for example, 2um, 2.5um, or 3 um. The width of the third connecting groove 43 is not limited, and may be in the range of 1 to 3um, for example, 1um, 2um, or 3 um. In this embodiment, optionally, the length of the third connecting groove 43 may be, for example, 2.5um, and the width may be, for example, 2 um.
Referring to fig. 3, in an embodiment of the present invention, the number of the fourth slots 50 may be unlimited, and may be one group, two groups, three groups, and the like. In this embodiment, the number of the fourth grooves 50 may be, for example, two groups, and the two groups of the fourth grooves 50 may be arranged in parallel with each other. The distance between the two sets of fourth grooves 50 is not limited, and may be in the range of 2 to 4um, for example, 2um, 3um, or 4 um. The size of the space between the two sets of fourth grooves 50 can be set according to actual requirements, and in this embodiment, optionally, the size of the space between the two sets of fourth grooves 50 can be, for example, 3 um.
Referring to fig. 3, in an embodiment of the present invention, the fourth groove 50 may include a first communicating groove 51, a second communicating groove 52 and a third communicating groove 53. Here, the first communicating groove 51 may communicate with one end of the second communicating groove 52, and the other end of the second communicating groove 52 may communicate with the third communicating groove 53, so that the first communicating groove 51 and the third communicating groove 53 may be located at both ends of the second communicating groove 52, respectively. At the connection of the first communicating groove 51 and the second communicating groove 52, the length of the connecting side of the first communicating groove 51 is smaller than the length of the connecting side of the second communicating groove 52. At the connection of the third communication groove 53 and the second communication groove 52, the length of the connection side of the third communication groove 53 is smaller than the length of the connection side of the second communication groove 52.
Referring to fig. 3, in an embodiment of the present invention, the shape of the first connecting groove 51 may be not limited, and may be rectangular, or may be other shapes. When the first connecting groove 51 is rectangular, the length thereof is not limited, and may be, for example, 2um, 2.5um, or 3um within a range of 2 to 3 um. The width of the first connecting groove 51 is not limited, and may be, for example, in a range of 1 to 3um, and may be, for example, 1um, or, for example, 2um, or, for example, 3 um. In this embodiment, optionally, the length of the first connecting groove 51 may be, for example, 2.5um, and the width may be, for example, 2 um.
Referring to fig. 3, in an embodiment of the present invention, the shape of the second communicating groove 52 may be not limited, and may be rectangular, or may be other shapes. When the second communicating groove 52 is rectangular, the length thereof is not limited, and may be, for example, 16 to 20um, or 16um, or 18um, or 20 um. The width of the second communicating groove 52 is not limited, and may be, for example, 3um, 4um, or 5um within a range of 3 to 5 um. In the present embodiment, alternatively, the length of the second communication groove 52 may be, for example, 18um, and the width may be, for example, 4 um.
Referring to fig. 3, in an embodiment of the present invention, the shape of the third communicating groove 53 may be not limited, and may be rectangular, or may be other shapes. When the third communicating groove 53 is rectangular, the length thereof is not limited, and may be in a range of 2 to 3um, for example, 2um, 2.5um, or 3 um. The width of the third communicating groove 53 is not limited, and may be, for example, in the range of 1 to 3um, and may be, for example, 1um, or 2um, or may be, for example, 3 um. In this embodiment, optionally, the length of the third communicating groove 53 may be, for example, 2.5um, and the width may be, for example, 2 um.
Referring to fig. 4 and 5, in an embodiment of the present invention, when the number of the groove body group is one, the groove body group may include a plurality of positioning grooves, the plurality of positioning grooves may be at least one fifth groove 60 and at least one sixth groove 70, and the fifth groove 60 and the sixth groove 70 are integrally distributed in a strip shape. The number of the fifth grooves 60 may not be limited, and may be one group, two groups, three groups, four groups, and the like. In this embodiment, optionally, the number of the fifth grooves 60 may be, for example, four groups, and the four groups of the fifth grooves 60 may be arranged in parallel with each other. The distance between two adjacent sets of fifth grooves 60 is not limited, and may be in the range of 16 to 20um, and may be, for example, 16um, or may also be, for example, 18um, or may also be, for example, 20 um. The size of the space between two adjacent sets of fifth grooves 60 can be set according to actual requirements, and in this embodiment, optionally, the size of the space between two adjacent sets of fifth grooves 60 can be, for example, 16 um. The number of the sixth grooves 70 may be unlimited and may be one group, two groups, etc. In this embodiment, the number of the sixth grooves 70 may be, for example, a quantity group. The two sets of sixth grooves 70 may be distributed on both sides of the four sets of fifth grooves 60 such that the two sets of sixth grooves 70 may be respectively parallel to the fifth grooves 60. The distance between the sixth groove 70 and the fifth groove 60 is not limited, and may be in the range of 16 to 20um, and may be, for example, 16um, or may be, for example, 18um, or may be, for example, 20 um. The size of the distance between the sixth groove 70 and the fifth groove 60 can be set according to actual requirements, and in this embodiment, optionally, the size of the distance between the sixth groove 70 and the fifth groove 60 can be, for example, 16 um.
Referring to FIG. 6, in one embodiment of the present invention, the fifth tank 60 may include a first inner tank 61, a second inner tank 62, and a third inner tank 63. Wherein the first inner tank 61 may be in communication with one end of the second inner tank 62 and the other end of the second inner tank 62 may be in communication with the third inner tank 63 such that the first inner tank 61 and the third inner tank 63 may be located at both ends of the second inner tank 62, respectively. At the junction of the first inner tank 61 and the second inner tank 62, the length of the connecting side of the first inner tank 61 is less than the length of the connecting side of the second inner tank 62. At the junction of the third inner tank 63 and the second inner tank 62, the length of the connecting side of the third inner tank 63 is less than the length of the connecting side of the second inner tank 62.
Referring to fig. 6, in an embodiment of the present invention, the shape of the first inner tank 61 may be not limited, and may be rectangular, or may be other shapes. When the first inner tank 61 is rectangular, the length thereof is not limited, and may be in a range of, for example, 4 to 6um, for example, 4um, or for example 5um, or for example 6 um. The width of the first inner groove 61 is not limited, and may be, for example, 1 to 3um, or 1um, or 2um, or 3 um. In this embodiment, optionally, the length of the first inner tank 61 may be, for example, 5um, and the width may be, for example, 2 um.
Referring to fig. 6, in an embodiment of the present invention, the shape of the second inner tank 62 may be not limited, and may be rectangular, or may be other shapes. When the second inner tank 62 is rectangular, the length thereof is not limited, and can be, for example, 8-12 um, such as 8um, 10um, or 12 um. The width of the second inner groove 62 is not limited, and may be, for example, 3 to 5um, for example, 3um, 4um, or 5 um. In this embodiment, the second inner tank 62 may have a length of, for example, 10um and a width of, for example, 4 um.
Referring to fig. 6, in an embodiment of the utility model, the shape of the third inner groove 63 may be not limited, and may be rectangular, or may be other shapes. When the third inner groove 63 is rectangular, the length thereof is not limited, and may be in a range of 4 to 6um, for example, 4um, 5um, or 6 um. The width of the third inner groove 63 is not limited, and may be, for example, 1 to 3um, 1um, 2um, or 3 um. In this embodiment, optionally, the length of the third inner groove 63 may be, for example, 5um, and the width may be, for example, 2 um.
Referring to fig. 6, in an embodiment of the present invention, the sixth groove 70 may include a first outer groove 71, a second outer groove 72, and a third outer groove 73. Wherein, the first outer groove 71 may communicate with one end of the second outer groove 72, and the other end of the second outer groove 72 may communicate with the third outer groove 73, so that the first outer groove 71 and the third outer groove 73 may be respectively located at both ends of the second outer groove 72. At the junction of the first outer groove 71 and the second outer groove 72, the length of the connecting side of the first outer groove 71 is smaller than the length of the connecting side of the second outer groove 72. At the junction of the third outer groove 73 and the second outer groove 72, the length of the connecting side of the third outer groove 73 is smaller than the length of the connecting side of the second outer groove 72.
Referring to fig. 6, in an embodiment of the present invention, the shape of the first outer groove 71 may be not limited, and may be rectangular, or may be other shapes. When the first outer groove 71 is rectangular, the length thereof is not limited, and may be in the range of 6 to 8um, for example, 6um, 7um, or 8 um. The width of the first outer groove 71 is not limited, and may be, for example, in the range of 1 to 3um, and may be, for example, 1um, or, for example, 2um, or, for example, 3 um. In this embodiment, optionally, the length of the first outer slot 71 may be, for example, 7um, and the width may be, for example, 2 um.
Referring to fig. 6, in an embodiment of the present invention, the shape of the second outer groove 72 may be not limited, and may be rectangular, or may be other shapes. When the second outer slot 72 is rectangular, the length thereof is not limited, and can be in the range of 8-12 um, for example, 8um, or 10um, or 12um, for example. The width of the second outer groove 72 is not limited, and may be, for example, in a range of 3 to 5um, and may be, for example, 3um, or may be, for example, 4um, or may be, for example, 5 um. In this embodiment, optionally, the length of the second outer slot 72 may be, for example, 10um, and the width may be, for example, 4 um.
Referring to fig. 6, in an embodiment of the utility model, the shape of the third outer groove 73 may be not limited, and may be rectangular, or may be other shapes. When the third outer groove 73 is rectangular, the length thereof may not be limited, and may be in a range of, for example, 6 to 8um, and may be, for example, 6um, or may be, for example, 7um, or may be, for example, 8 um. The width of the third outer groove 73 is not limited, and may be, for example, in the range of 1 to 3um, and may be, for example, 1um, or, for example, 2um, or, for example, 3 um. In this embodiment, optionally, the length of the third outer slot 73 may be, for example, 7um, and the width may be, for example, 2 um.
The present invention also provides a semiconductor chip, which may include a wafer 10, a photolithographic alignment mark pattern structure, and an epitaxial layer. The photolithography alignment mark pattern structure may be formed on the wafer 10, and the epitaxial layer may cover the wafer 10 and the photolithography alignment mark pattern structure. The thickness of the wafer 10 is not limited, and the thickness of the wafer 10 may be, for example, in the range of 100 to 500um, such as 200um, 300um, or 400 um. In this embodiment, the thickness of the wafer 10 is, for example, 300 um. The thickness of the epitaxial layer is not limited, and the thickness of the epitaxial layer may be, for example, in the range of 5 to 12um, for example, 5um, 8um, or 12 um. In this embodiment, the thickness of the epitaxial layer is optionally, for example, 8 um.
In summary, according to the photolithography alignment mark pattern structure and the semiconductor wafer provided by the present invention, during the epitaxial growth process, the epitaxial layer can uniformly cover the photolithography alignment mark pattern structure, so that the profile distortion generated during the epitaxial growth process can be effectively reduced, thereby improving the alignment accuracy and improving the product quality to a certain extent.
In the description of the present specification, reference to the description of the terms "present embodiment," "example," "specific example," etc., means that a particular feature, structure, material, or characteristic described in connection with the embodiment or example is included in at least one embodiment or example of the utility model. In this specification, the schematic representations of the terms used above do not necessarily refer to the same embodiment or example. Furthermore, the particular features, structures, materials, or characteristics described may be combined in any suitable manner in any one or more embodiments or examples.
The embodiments of the utility model disclosed above are intended merely to aid in the explanation of the utility model. The examples are not intended to be exhaustive or to limit the utility model to the precise forms disclosed. Obviously, many modifications and variations are possible in light of the above teaching. The embodiments were chosen and described in order to best explain the principles of the utility model and the practical application, to thereby enable others skilled in the art to best utilize the utility model. The utility model is limited only by the claims and their full scope and equivalents.

Claims (10)

1. A lithographic alignment mark pattern structure, comprising:
the groove body group is arranged on the surface of the wafer, and the single groove body group comprises a plurality of positioning grooves;
the positioning grooves in the single groove body group are parallel to each other, and the middle parts of the positioning grooves are in a shape protruding outwards.
2. The graphic structure of a lithographic alignment mark according to claim 1, wherein when the number of the slot groups is greater than one, the plurality of slot groups include a first slot group, a second slot group, a third slot group and a fourth slot group, the first slot group, the second slot group, the third slot group and the fourth slot group include at least one of the positioning grooves, and the first slot group, the second slot group, the third slot group and the fourth slot group are distributed in a rectangular shape.
3. The graphic structure of lithography alignment mark according to claim 2, wherein said first groove body group comprises two said positioning grooves, said positioning grooves are first grooves, said two first grooves have the same structure, and said first grooves comprise a first groove, a second groove and a third groove connected in sequence.
4. The graphic structure of lithography alignment mark according to claim 2, wherein said second groove body group comprises two said positioning grooves, said positioning grooves are second grooves, said two second grooves have the same structure, said second grooves comprise a first groove, a second groove and a third groove connected in sequence.
5. The structure of claim 2, wherein the third set of grooves comprises two positioning grooves, the positioning grooves are third grooves, the two third grooves have the same structure, and the third grooves comprise a first connecting groove, a second connecting groove and a third connecting groove which are connected in sequence.
6. The graphic structure of lithography alignment mark according to claim 2, wherein said fourth groove body group comprises two said positioning grooves, said positioning grooves are fourth grooves, said two fourth grooves have the same structure, and said fourth grooves comprise a first communicating groove, a second communicating groove and a third communicating groove which are connected in sequence.
7. The graphic structure of lithography alignment mark according to claim 1, wherein when the number of the groove body groups is one, the plurality of positioning grooves are four fifth grooves and two sixth grooves, respectively, the four fifth grooves and the two sixth grooves are integrally distributed in a stripe shape, and the two sixth grooves are located at two sides of the four fifth grooves, respectively.
8. The graphic structure of claim 7, wherein the fifth groove comprises a first inner groove, a second inner groove and a third inner groove connected in sequence.
9. The graphic structure of lithography alignment mark according to claim 7, wherein said sixth groove comprises a first outer groove, a second outer groove and a third outer groove which are connected in sequence.
10. A semiconductor wafer, comprising:
a wafer;
the photoetching alignment mark graph structure is arranged on the surface of the wafer; and
the epitaxial layer covers the wafer and the photoetching alignment mark pattern structure;
wherein, the photoetching alignment mark pattern structure comprises:
the groove body group is arranged on the surface of the wafer, and the single groove body group comprises a plurality of positioning grooves;
the positioning grooves in the single groove body group are parallel to each other, and the middle parts of the positioning grooves are outwards protruded.
CN202220533150.9U 2022-03-11 2022-03-11 Photoetching alignment mark pattern structure and semiconductor wafer Active CN216773242U (en)

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