CN216772009U - Ultra-wideband infrared antireflection film - Google Patents
Ultra-wideband infrared antireflection film Download PDFInfo
- Publication number
- CN216772009U CN216772009U CN202121071661.5U CN202121071661U CN216772009U CN 216772009 U CN216772009 U CN 216772009U CN 202121071661 U CN202121071661 U CN 202121071661U CN 216772009 U CN216772009 U CN 216772009U
- Authority
- CN
- China
- Prior art keywords
- film layer
- film
- ybf
- thickness
- ultra
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Active
Links
Images
Landscapes
- Surface Treatment Of Optical Elements (AREA)
Abstract
The utility model relates to an ultra-wideband infrared antireflection film which comprises a first ZnS film layer, a first Ge film layer and a first YbF film layer which are sequentially stacked from inside to outside on a substrate material3Film layer, second Ge film layer, second YbF3Film layer, third Ge film layer, third YbF3Compared with the prior art, the film layer and the second ZnS film layer have the following beneficial effects: the ultra-wideband infrared antireflection film has high strength and hardness, can adapt to various severe environmental changes, and has average light reflectivity lower than 2% in a wave band from 3um to 12 um.
Description
Technical Field
The utility model relates to an ultra-wideband infrared antireflection film.
Background
An infrared optical system is generally composed of a plurality of infrared optical elements, and most of infrared optical window materials have a relatively low transmittance, for example, a transmittance T of 47% for germanium Ge, a transmittance of 53% for silicon Si, a transmittance of 68% for zinc selenide ZnSe, and a transmittance of 75% for zinc sulfide ZnS. The combination of a plurality of infrared optical elements means that the light flux of an infrared optical system is extremely low, and the optical system basically cannot work, so that the surface reflectivity of an infrared material is reduced, the transmittance is improved, and the combination has extremely important significance for improving the performance of the infrared optical system.
The infrared antireflection film is usually designed according to an infrared window band used by an optical system, and the commonly used infrared window band comprises medium-wave infrared 3-5um (atmospheric window) and long-wave infrared 8-12 um. The longer the wavelength and the wider the waveband, the thicker the film layer is, the higher the relative reflectivity is, the more mismatched the film layer stress is, the poorer the film layer firmness is, and the like. Moreover, most of the optical system window sheets are directly used after being exposed in the atmospheric environment, the surface of the optical system window sheets can be damaged by the severe natural environment of a part of areas, the transmittance is reduced, and the optical system can even fail seriously. Therefore, the infrared antireflection film must have high strength and high hardness so as to be able to cope with various severe environmental changes.
SUMMERY OF THE UTILITY MODEL
The utility model relates to an ultra-wideband infrared antireflection film which can be applied to an infrared optical material, has the average light reflectivity of less than 2 percent in a wave band from 3um to 12um, has high strength and high hardness, and can adapt to various severe environmental changes.
The utility model is realized by the following technical scheme:
an ultra-wideband infrared antireflection film comprises a first ZnS film layer, a first Ge film layer and a first YbF film layer which are sequentially stacked from inside to outside on a substrate material3Film layer, second Ge film layer, second YbF3Film layer, third Ge film layer, third YbF3A film layer and a second ZnS film layer,
the film thickness of the first ZnS film layer is 68.79-71.60 nm;
the film thickness of the first Ge film layer is 194.56-202.50 nm;
the first YbF3The film thickness of the film layer is 166.57-173.37 nm;
the thickness of the second Ge film layer is 134.99-140.50 nm;
the second YbF3The film thickness of the film layer is 337.83-351.62 nm;
the thickness of the third Ge film layer is 65.08-67.74 nm;
the third YbF3The film thickness of the film layer is 741.71-771.98 nm;
the film thickness of the second ZnS film layer is 49.49-51.51 nm.
The substrate material is a Ge substrate.
Compared with the prior art, the utility model has the following beneficial effects:
the first ZnS film layer of the ultra-wideband infrared antireflection film can improve the adhesive force between the film layer and a substrate material, and the second ZnS film layer can improve the strength and hardness of the film layer, namely a Ge film layer and a YbF film layer3The film layers are respectively used as main film stacks of antireflection films formed by materials with high refractive index and low refractive index, so that the ultra-wideband infrared antireflection film disclosed by the utility model is high in strength and hardness, can adapt to various severe environmental changes, and is lower than 2% in the average reflectivity of light in a wave band from 3 micrometers to 12 micrometers.
Drawings
FIG. 1 is a schematic diagram of the present invention.
FIG. 2 is a plot of the reflectance spectrum of a Ge substrate with an ultra-wideband infrared antireflective coating of example 1.
FIG. 3 is a reflectance spectrum plot of a Ge substrate with an ultra-wideband infrared antireflective coating of example 2.
FIG. 4 is a reflectance spectrum plot of a Ge substrate with an ultra-wideband infrared antireflective coating of example 3.
Detailed Description
The utility model is further illustrated with reference to the figures and the specific embodiments.
Example 1
An ultra-wideband infrared antireflection film comprises a first ZnS film layer, a first Ge film layer and a first YbF film layer which are sequentially stacked from inside to outside on a substrate material3Film layer, second Ge film layer, second YbF3A film layer, a third Ge film layer,Third YbF3A film layer and a second ZnS film layer,
the substrate material is a Ge substrate.
The film thickness of the first ZnS film layer is 68.79 nm;
the thickness of the first Ge film layer is 194.56 nm;
the first YbF3The film thickness of the film layer is 166.57 nm;
the film thickness of the second Ge film layer is 134.99 nm;
the second YbF3The film thickness of the film layer is 337.83 nm;
the thickness of the third Ge film layer is 65.08 nm;
the third YbF3The film thickness of the film layer is 741.71 nm;
the film thickness of the second ZnS film layer is 49.49 nm.
Example 2
Different from the embodiment 1, the film thickness of the first ZnS film layer is 71.60 nm;
the thickness of the first Ge film layer is 202.50 nm;
the first YbF3The film thickness of the film layer is 173.37 nm;
the thickness of the second Ge film layer is 140.50 nm;
the second YbF3The film thickness of the film layer is 351.62 nm;
the film thickness of the third Ge film layer is 67.74 nm;
the third YbF3The film thickness of the film layer is 771.98 nm;
the film thickness of the second ZnS film layer is 51.51 nm.
Example 3
Different from the embodiment 1, the film thickness of the first ZnS film layer is 70.20 nm;
the film thickness of the first Ge film layer is 198.53 nm;
the film thickness of the first YbF3 film layer is 169.97 nm;
the thickness of the second Ge film layer is 137.74 nm;
the film thickness of the second YbF3 film layer is 344.73 nm;
the film thickness of the third Ge film layer is 66.41 nm;
the film thickness of the third YbF3 film layer is 756.84 nm;
the film thickness of the second ZnS film layer is 50.50 nm.
Claims (2)
1. An ultra-wideband infrared antireflection film is characterized in that: comprises a first ZnS film layer (1), a first Ge film layer (2) and a first YbF which are covered on a substrate (9) and are stacked from inside to outside in sequence3A film layer (3), a second Ge film layer (4) and a second YbF3A film layer (5), a third Ge film layer (6) and a third YbF3A membrane layer (7) and a second ZnS membrane layer (8),
the film thickness of the first ZnS film layer (1) is 68.79-71.60 nm;
the thickness of the first Ge film layer (2) is 194.56-202.50 nm;
the first YbF3The film thickness of the film layer (3) is 166.57-173.37 nm;
the thickness of the second Ge film layer (4) is 134.99-140.50 nm;
the second YbF3The film thickness of the film layer (5) is 337.83-351.62 nm;
the thickness of the third Ge film layer (6) is 65.08-67.74 nm;
the third YbF3The film thickness of the film layer (7) is 741.71-771.98 nm;
the film thickness of the second ZnS film layer (8) is 49.49-51.51 nm.
2. The ultra-wideband infrared antireflection film of claim 1, wherein: the substrate (9) is a Ge substrate.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202121071661.5U CN216772009U (en) | 2021-05-19 | 2021-05-19 | Ultra-wideband infrared antireflection film |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202121071661.5U CN216772009U (en) | 2021-05-19 | 2021-05-19 | Ultra-wideband infrared antireflection film |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN216772009U true CN216772009U (en) | 2022-06-17 |
Family
ID=81955366
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN202121071661.5U Active CN216772009U (en) | 2021-05-19 | 2021-05-19 | Ultra-wideband infrared antireflection film |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN216772009U (en) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN114966911A (en) * | 2022-06-28 | 2022-08-30 | 无锡泓瑞航天科技有限公司 | Antireflective film group for silicon substrate and application thereof |
-
2021
- 2021-05-19 CN CN202121071661.5U patent/CN216772009U/en active Active
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN114966911A (en) * | 2022-06-28 | 2022-08-30 | 无锡泓瑞航天科技有限公司 | Antireflective film group for silicon substrate and application thereof |
| CN114966911B (en) * | 2022-06-28 | 2024-04-02 | 无锡泓瑞航天科技有限公司 | Anti-reflection film group for silicon substrate and application thereof |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| US20110096391A1 (en) | Broadband reflecting mirror | |
| US20150349147A1 (en) | Broad Band Anti-Reflection Coating for Photovoltaic Devices and Other Devices | |
| CA2616105C (en) | Broad band antireflection coating and method of making same | |
| US5449413A (en) | UV/IR reflecting solar cell cover | |
| US8867320B2 (en) | Timepiece cover glass and timepiece | |
| US20220416716A1 (en) | Glazing unit, method for the production thereof and use thereof | |
| CN216772009U (en) | Ultra-wideband infrared antireflection film | |
| CN107300783B (en) | A kind of visible light, laser and middle infrared band recombination dichroic elements and design method | |
| US20140373906A1 (en) | Anti-reflection coatings for multijunction solar cells | |
| CN207164279U (en) | A kind of uvioresistant antireflection film layer | |
| CN108089244A (en) | A kind of broadband wide-angle antireflective infrared optics multilayer film | |
| KR101194258B1 (en) | Transparent substrate for solar cell having a broadband anti-reflective multilayered coating thereon and method for preparing the same | |
| AU2018220161A1 (en) | Solar module | |
| CN115451594B (en) | Broad spectrum solar energy absorption enhancement device and preparation method thereof | |
| JP2023182732A (en) | Optical coating having nano-laminate for improved durability | |
| EP2806464B1 (en) | Colored solar cells and panels containing the same | |
| CN209804667U (en) | Laminated antireflection film for crystalline silicon solar cell | |
| CN211741620U (en) | Lens and lens assembly | |
| US10359544B2 (en) | Long-wave infrared anti-reflective laminate | |
| KR101688408B1 (en) | Multilayer coated substrate with high reflectance and high durability, useful for rear surface reflection of photovoltaic module and method for manufacturing the same | |
| CA3099253A1 (en) | Material comprising a stack with thermal and aesthetic properties | |
| CN216248372U (en) | Ultra-wideband antireflection film system based on PC optical product | |
| CN114063204B (en) | Light splitting sheet and preparation method thereof | |
| CN216595591U (en) | Visible light transmitting and infrared reflecting light splitting sheet | |
| CN213069238U (en) | Infrared window piece of silicon substrate |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| GR01 | Patent grant | ||
| GR01 | Patent grant |