CN216688314U - Wafer bearing device of chemical vapor deposition equipment - Google Patents
Wafer bearing device of chemical vapor deposition equipment Download PDFInfo
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- CN216688314U CN216688314U CN202220263829.0U CN202220263829U CN216688314U CN 216688314 U CN216688314 U CN 216688314U CN 202220263829 U CN202220263829 U CN 202220263829U CN 216688314 U CN216688314 U CN 216688314U
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- wafer
- inner frame
- frame ring
- main body
- tray
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- 238000005229 chemical vapour deposition Methods 0.000 title claims abstract description 15
- 230000000295 complement effect Effects 0.000 claims abstract description 5
- 230000007704 transition Effects 0.000 claims description 13
- 230000003247 decreasing effect Effects 0.000 claims description 2
- 230000000670 limiting effect Effects 0.000 claims description 2
- 230000008901 benefit Effects 0.000 abstract description 3
- 235000012431 wafers Nutrition 0.000 description 74
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 description 1
- 238000013459 approach Methods 0.000 description 1
- 230000009286 beneficial effect Effects 0.000 description 1
- 230000007423 decrease Effects 0.000 description 1
- 238000013461 design Methods 0.000 description 1
- 229910002804 graphite Inorganic materials 0.000 description 1
- 239000010439 graphite Substances 0.000 description 1
- 238000003780 insertion Methods 0.000 description 1
- 230000037431 insertion Effects 0.000 description 1
- 238000012423 maintenance Methods 0.000 description 1
- 239000000463 material Substances 0.000 description 1
- 238000000034 method Methods 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 238000012545 processing Methods 0.000 description 1
- 230000002035 prolonged effect Effects 0.000 description 1
- 239000004065 semiconductor Substances 0.000 description 1
- HBMJWWWQQXIZIP-UHFFFAOYSA-N silicon carbide Chemical compound [Si+]#[C-] HBMJWWWQQXIZIP-UHFFFAOYSA-N 0.000 description 1
- 229910010271 silicon carbide Inorganic materials 0.000 description 1
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Abstract
The application provides a wafer bearing device of chemical vapor deposition equipment. The wafer bearing device of the chemical vapor deposition equipment comprises an inner frame ring used for containing the wafer. The inner frame ring comprises a main body part in an annular shape and an inlet positioned on the inner side of the main body part. The wafer can be placed into the inner frame ring from the placing inlet, and the inner frame ring further includes a compensating portion integrally formed with a main body portion of the inner frame ring, the compensating portion extending from the main body portion toward a radially inner side. Under the state that the wafer is placed in the inner frame ring, the shape of the compensation part is complementary with that of the wafer, so that the structure formed by the wafer and the compensation part is circular. This application compensates the wafer because location limit or constant head tank and the breach that produces through setting up compensation portion does benefit to the turbulent flow of avoiding gas on the wafer, makes the growth of epitaxial layer more even.
Description
Technical Field
The application belongs to the technical field of semiconductor processing, and particularly relates to a wafer bearing device of chemical vapor deposition equipment.
Background
Chemical vapor deposition equipment is widely applied to epitaxial growth processes of wafers. The chemical vapor deposition equipment comprises a bearing device of the wafer, which can comprise a tray at the bottom of the wafer or a cover plate for fixing the position of the wafer. Generally, wafers have a retaining edge (wafer flat) or notch (wafer notch), i.e., the wafer is notched relative to a perfect circle. When an epitaxial layer grows on a wafer, because the wafer is not a perfect circle, airflow at the positioning edge of the wafer is easy to form turbulent flow along with the high-speed rotation of the bottom tray, the shape of the airflow on the surface of the wafer is influenced, and finally the growth uniformity of the epitaxial layer is influenced.
SUMMERY OF THE UTILITY MODEL
To solve or improve at least one of the problems mentioned in the background, the present application provides a wafer carrier of a chemical vapor deposition apparatus.
The wafer comprises a positioning edge or a positioning groove, the wafer bearing device comprises an inner frame ring for containing the wafer, the inner frame ring comprises a main body part in an annular shape and an inlet positioned on the inner side of the main body part, the wafer can be placed into the inner frame ring from the inlet, the inner frame ring further comprises a compensation part integrally formed with the main body part of the inner frame ring, and the compensation part extends from the main body part towards the radial inner side,
under the state that the wafer is placed in the inner frame ring, the shape of the compensation part is complementary with that of the wafer, so that the structure formed by the wafer and the compensation part is circular.
In at least one embodiment, the wafer and the compensation part have a vacant region therebetween, and the wafer, the vacant region and the compensation part form a circular structure together when viewed in the axial direction of the inner frame ring.
In at least one embodiment, the compensation part can limit the relative rotation of the wafer and the inner frame ring under the state that the wafer is placed in the inner frame ring.
In at least one embodiment, the compensating portion and the main body portion have a transition surface formed therebetween on the inner race.
In at least one embodiment, the transition surface has an angle of 30 ° to 60 ° with the top surface of the main body portion in a cross section passing through the axis of the inner frame ring.
In at least one embodiment, the transition surface is formed on the entire circumference of the main body portion, and the insertion port is a tapered space whose radial length gradually decreases toward the bottom.
In at least one embodiment, the compensation portion is formed at a bottom side of the inner frame ring, and a thickness of the compensation portion is smaller than a thickness of the main body portion.
In at least one embodiment, the thickness of the compensation portion is equal to the thickness of a target wafer accommodated by the inner frame ring.
In at least one embodiment, the wafer carrier further comprises a tray, and the inner frame ring is formed separately from the tray and is used for being mounted on the tray.
The wafer carrying device of the chemical vapor deposition equipment comprises a tray for carrying the wafer, the tray comprises a compensation part which is integrally formed with the tray,
when the wafer is placed on the tray, an empty area is arranged between the wafer and the compensation part, and when the wafer is seen from the axial direction of the wafer, the structure formed by the wafer, the empty area and the compensation part is circular.
In at least one embodiment, the wafer carrier further comprises an inner frame ring for determining the position of the wafer.
This application compensates the wafer because location limit or constant head tank and the breach that produces through setting up compensation portion does benefit to the turbulent flow of avoiding gas on the wafer, makes the growth of epitaxial layer more even.
Drawings
Fig. 1 shows a top view of a wafer carrier of a chemical vapor deposition apparatus according to an embodiment of the present application.
Fig. 2 shows an isometric view of a wafer carrier of a chemical vapor deposition apparatus according to an embodiment of the present application.
Fig. 3 shows a cross-sectional view of a wafer carrier of a chemical vapor deposition apparatus according to an embodiment of the present application.
Description of the reference numerals
1, a wafer; 11, positioning edges;
2, a tray;
3, inner frame ring; 31 is arranged at the inlet; 32 a compensation part; 33 a transition surface; 34 a main body portion;
4 vacant areas
Detailed Description
Exemplary embodiments of the present application are described below with reference to the accompanying drawings. It should be understood that the detailed description is only intended to teach one skilled in the art how to practice the present application, and is not intended to be exhaustive or to limit the scope of the application.
Referring to fig. 1 and 2, the present application provides a wafer carrier of a chemical vapor deposition apparatus. In one embodiment, the wafer carrying device comprises a tray 2 for carrying the wafer 1 and an inner frame ring 3 for fixing the position of the wafer 1, wherein the inner frame ring 3 is detachably fixed on the tray 2. The inner ring 3 has an inlet 31, the wafer 1 can be inserted into the inner ring 3 from the inlet 31, and the diameter of the wafer 1 can be approximately equal to the diameter of the inlet 31.
Further, the wafer 1 includes a positioning edge 11, and the positioning edge 11 causes the wafer 1 to form a notch compared with a perfect circle. The inner frame ring 3 is provided with a compensation part 32 formed on the inner frame ring 3 at the position of the positioning edge 11, and the compensation part 32 is complementary to the shape of the wafer 1, so that the structure formed by the wafer 1 and the compensation part 32 is circular. Due to the limiting effect of the inner frame ring 3 (especially at the compensation part 32), the inner frame ring 3 and the wafer 1 are relatively fixed in the horizontal direction.
Compared with the prior art, the compensating portion 32 is arranged on the inner frame ring, the notch of the wafer 1 is compensated, turbulent flow is not easy to occur to airflow of the wafer 1 at the positioning edge 11, and the growing uniformity of the epitaxial layer is improved.
It is understood that when the wafer size is larger, for example, 8 "wafer or 12" wafer, the wafer 1 has a positioning slot (not shown), and the compensation portion 32 may have a needle shape or a column shape or a convex shape, which is complementary to the wafer, so that the projection of the structure formed by the wafer 1 and the compensation portion 32 on the horizontal plane approaches a perfect circle.
Further, the compensation part 32 may be formed at the inner rim 3 or the tray 2.
Due to the growth of the epitaxial layer of the wafer, the compensation part 32 and the inner frame ring 3 may be covered with the epitaxial layer, thereby affecting the subsequent use of the device. In a preferred embodiment of the present application, the compensation portion 32 is formed in the inner race 3. When the compensation part 32 is formed on the inner frame ring 3, the compensation part 32 can be replaced when the inner frame ring 3 is replaced, and the service life of the tray 2 can be effectively prolonged. The epitaxial layer is relatively difficult to cover on the tray 2, and the tray has the advantage of long service life, and if the compensation part 32 is formed on the tray 2, the tray 2 needs to be frequently replaced because the epitaxial layer covers on the compensation part 32, so that the service life of the tray 2 is shortened, and the use and maintenance costs of the equipment are further increased.
Further, referring to fig. 3, the compensating portion 32 has a transition surface 33 with a main body portion 34 of the inner rim 3. Illustratively, in a cross section passing through the axis of the inner frame ring 3, the transition surface 33 and the top surface of the inner frame ring 3 have an included angle of 30 ° to 60 °, and the transition surface 33 makes the inlet 31 a tapered space with a gradually decreasing radial length toward the bottom (lower), and the transition surface 33 can play a guiding role when the wafer 1 is inserted into the inner frame ring 3. Moreover, relative to the design that the transition surface 33 is perpendicular to the top surface of the inner frame ring 3, an included angle of 30-60 degrees is formed between the transition surface 33 and the top surface of the inner frame ring 3, so that the turbulence of gas on the wafer 1 is avoided, and the growth of an epitaxial layer is more uniform.
Further, referring to fig. 3, let the thickness of the wafer 1 be T1, the thickness of the compensation portion 32 be T2, and the maximum thickness of the main body portion 34 of the inner frame ring 3 be T3. Wherein, the thickness relation of each part in the inner frame ring 3 can be more than 0 and less than T2 and less than or equal to T3. In one embodiment, T2 is T1, and making the thickness of the compensation portion 32 the same as the thickness of the wafer 1 is beneficial to avoid turbulence of the gas on the wafer 1 and make the growth of the epitaxial layer more uniform.
Here, the offset portion 32 is preferably formed on the bottom side of the inner race 3 in the thickness direction of the inner race 3. More preferably, the bottom surface of the compensation part 32 and the bottom surface of the main body part 34 of the inner race 3 may be on the same plane.
Further, the vacant regions 4 are provided between the wafer 1 and the compensation portion 32 and between the wafer 1 and the main body portion 34 of the inner frame ring 3. The width of the vacant region 4, that is, the gap between the wafer 1 and the inner frame ring 3, which may be many times the epitaxial thickness of the wafer, may be designed after the epitaxial thickness of the wafer is determined, and the width of the vacant region 4, that is, the inner diameter of the inner frame ring 3 may be designed. The orthographic projection of the wafer 1, the vacant region 4 and the compensation part 32 is circular when viewed from the axial direction of the inner carrier ring 3.
Illustratively, the material of the tray 2 and the inner rim 3 may be graphite, etc., and the inner rim 3 may be coated with silicon carbide.
While the foregoing is directed to the preferred embodiment of the present application, it will be understood by those skilled in the art that various changes and modifications may be made without departing from the spirit and scope of the application.
Claims (11)
1. A wafer bearing device of chemical vapor deposition equipment, wherein the wafer comprises a positioning edge or a positioning groove,
the wafer bearing device comprises an inner frame ring for containing the wafer, the inner frame ring comprises a main body part in an annular shape and an inlet positioned on the inner side of the main body part, the wafer can be placed into the inner frame ring from the inlet, the inner frame ring further comprises a compensation part integrally formed with the main body part of the inner frame ring, and the compensation part extends from the main body part towards the radial inner side,
under the state that the wafer is placed in the inner frame ring, the shape of the compensation part is complementary with that of the wafer, so that the structure formed by the wafer and the compensation part is circular.
2. The wafer carrier device according to claim 1, wherein the wafer and the compensation part have a vacant region therebetween, and the wafer, the vacant region and the compensation part form a circular structure when viewed from the axial direction of the inner ring.
3. The wafer bearing device of claim 1, wherein the compensation portion is capable of limiting relative rotation between the wafer and the inner frame ring in a state that the wafer is inserted into the inner frame ring.
4. The wafer carrier device of claim 1, wherein the compensating portion and the main body portion have a transition surface formed in the inner frame ring.
5. The wafer carrier device of claim 4, wherein the transition surface has an angle of 30 ° to 60 ° with the top surface of the main body portion in a cross section through the axis of the inner frame ring.
6. The wafer carrier device according to claim 4, wherein the transition surface is formed on the entire circumference of the main body portion such that the inlet is a tapered space having a radial length gradually decreasing toward the bottom.
7. The wafer carrier device of claim 1, wherein the compensating portion is formed on a bottom side of the inner frame ring, the compensating portion having a thickness less than a thickness of the main body portion.
8. The wafer carrier device of claim 1, wherein the thickness of the compensation portion is equal to the thickness of a target wafer received by the inner frame ring.
9. The wafer carrier device of claim 1, further comprising a tray, wherein the inner ring is formed separately from the tray and is configured to be mounted to the tray.
10. A wafer bearing device of chemical vapor deposition equipment, wherein the wafer comprises a positioning edge or a positioning groove,
the wafer bearing device comprises a tray for bearing the wafer, the tray comprises a compensation part which is integrally formed with the tray,
when the wafer is placed on the tray, an empty area is arranged between the wafer and the compensation part, and when the wafer is seen from the axial direction of the wafer, the structure formed by the wafer, the empty area and the compensation part is circular.
11. The wafer carrier device of claim 10, further comprising an inner frame ring for determining the position of the wafer.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202220263829.0U CN216688314U (en) | 2022-02-09 | 2022-02-09 | Wafer bearing device of chemical vapor deposition equipment |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202220263829.0U CN216688314U (en) | 2022-02-09 | 2022-02-09 | Wafer bearing device of chemical vapor deposition equipment |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN216688314U true CN216688314U (en) | 2022-06-07 |
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| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN202220263829.0U Active CN216688314U (en) | 2022-02-09 | 2022-02-09 | Wafer bearing device of chemical vapor deposition equipment |
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Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN114737254A (en) * | 2022-06-09 | 2022-07-12 | 芯三代半导体科技(苏州)有限公司 | Silicon carbide epitaxial growth device and growth process method |
-
2022
- 2022-02-09 CN CN202220263829.0U patent/CN216688314U/en active Active
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN114737254A (en) * | 2022-06-09 | 2022-07-12 | 芯三代半导体科技(苏州)有限公司 | Silicon carbide epitaxial growth device and growth process method |
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| GR01 | Patent grant | ||
| GR01 | Patent grant | ||
| CP03 | Change of name, title or address | ||
| CP03 | Change of name, title or address |
Address after: 215125 No. 388 Ruoshui Road, Suzhou Industrial Park, Suzhou City, Jiangsu Province Patentee after: Suzhou Laboratory of Materials Science Country or region after: China Patentee after: Xin San Dai Semiconductor Technology (Suzhou) Co.,Ltd. Address before: 215125 No. 388 Ruoshui Road, Suzhou Industrial Park, Suzhou City, Jiangsu Province Patentee before: Suzhou Laboratory of Materials Science Country or region before: China Patentee before: Core semiconductor technology (Suzhou) Co.,Ltd. |
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| TR01 | Transfer of patent right | ||
| TR01 | Transfer of patent right |
Effective date of registration: 20240520 Address after: Building S, No.104 Sumu Road, Suzhou Industrial Park, Suzhou Area, China (Jiangsu) Pilot Free Trade Zone, Suzhou City, Jiangsu Province, 215101 Patentee after: Xin San Dai Semiconductor Technology (Suzhou) Co.,Ltd. Country or region after: China Address before: 215125 No. 388 Ruoshui Road, Suzhou Industrial Park, Suzhou City, Jiangsu Province Patentee before: Suzhou Laboratory of Materials Science Country or region before: China Patentee before: Xin San Dai Semiconductor Technology (Suzhou) Co.,Ltd. |