CN211367779U

CN211367779U - Shielding ring, shielding device and electroplating equipment

Info

Publication number: CN211367779U
Application number: CN201921800754.XU
Authority: CN
Inventors: 史蒂文·贺·汪
Original assignee: Xinyang Guimi Shanghai Semiconductor Technology Co ltd
Current assignee: Xinyang Guimi Shanghai Semiconductor Technology Co ltd
Priority date: 2019-10-24
Filing date: 2019-10-24
Publication date: 2020-08-28
Anticipated expiration: 2029-10-24

Abstract

The utility model discloses a shield ring, shield assembly and electroplating device, shield ring are used for the wafer to electroplate, the shield ring includes vortex portion, vortex portion with the interior anchor ring of shield ring is connected, vortex portion is used for the disturbance to electroplate the plating solution of wafer, so that the wafer is by even electroplating. The utility model discloses a set up the shield ring before the wafer for the plating solution need flow through the shield ring earlier, when the shield ring was flowed through to the plating solution, the vortex portion that is located the interior anchor ring of shield ring can make the plating solution take place to rotate, thereby is favorable to improving the homogeneity of wafer plating layer.

Description

Shielding ring, shielding device and electroplating equipment

Technical Field

The utility model relates to an electroplate the field, in particular to shield ring, shield assembly and electroplating device.

Background

Wafer plating is an important process step in the wet process of chip fabrication. The wafer is plated with horizontal plating and vertical plating. In the wafer electroplating process, the uniformity of the thickness of the coating is an important aspect of the electroplating effect, and various electroplating equipment manufacturers are constantly improving the equipment, aiming at improving the uniformity of the thickness of the coating.

Currently, wafers for chip fabrication are both 8 inches (200mm diameter) and 12 inches (300mm diameter). The larger the wafer, the greater the difficulty in its plating to achieve uniformity of thickness across the wafer.

Factors affecting the uniformity of the coating thickness on the wafer are many and complex, with effects primarily in both the electric and fluid fields. Generally, the non-uniformity of the coating thickness mainly means a large difference in thickness between the edge of the wafer and the inside thereof. In order to reduce the difference, a cathode edge solid shielding plate is generally adopted to shield a part of electric lines at the edge of the wafer, which is beneficial to improving the thickness uniformity, but the problem of coating thickness uniformity of the whole wafer still exists in a local part of the wafer. There is no good solution in the industry to improve the local uniformity of the wafer coating. In particular, in vertical plating, since the wafer is hard to rotate during plating, the problem of local uniformity of the plating thickness is particularly prominent.

SUMMERY OF THE UTILITY MODEL

The to-be-solved technical problem of the utility model is to overcome the above-mentioned defect among the prior art, provide a shield ring, shield assembly and electroplating device.

The utility model discloses an above-mentioned technical problem is solved through following technical scheme:

the utility model provides a shield ring for the wafer is electroplated, its characterized in that, the shield ring includes vortex portion, vortex portion with the interior anchor ring of shield ring is connected, vortex portion is used for the disturbance electroplating the plating solution of wafer, so that the wafer is by even electroplating.

In this embodiment, through adopting above structure, through setting up the shield ring before the wafer for the plating solution need flow through the shield ring earlier, when the plating solution flows through the shield ring, is located the vortex portion of the interior anchor ring of shield ring and can make the plating solution take place to rotate, thereby is favorable to improving the homogeneity of wafer plating layer.

Preferably, the vortex portion has a vortex surface, the vortex surface extends towards the axis of interior anchor ring face, certainly the vortex portion with the junction of interior anchor ring face extremely the end of vortex portion, the vortex surface is in the perpendicular to the area of the projection in the plane of interior anchor ring face is big before big, big before little, the size is unchangeable, or the grow diminishes and goes on in turn.

In the embodiment, by adopting the structure, the turbulence surface is arranged on the turbulence part, so that the turbulence part can better disturb the flow of the electroplating solution; the turbulent surface is designed to extend along the axial direction of the inward annular surface, so that the area of the turbulent surface is increased, the turbulent surface can contact more electroplating solution, and the disturbance efficiency of the turbulent surface is improved; the area of the projection of the turbulent surface in the plane vertical to the inner ring surface is designed to be larger and then smaller, namely the turbulent surface is firstly twisted in the extension process, so that the area of the projection of the turbulent surface in the plane vertical to the inner ring surface is gradually increased; then the spoiler is reversely twisted, so that the area of the projection of the spoiler in the plane vertical to the inner ring surface is gradually reduced. The design form of the flow disturbing surface enables the flow disturbing surface to contact more electroplating solution, and is beneficial to improving the disturbance efficiency of the flow disturbing surface. In other embodiments, the area of the projection of the turbulent flow surface in the plane perpendicular to the inner ring surface may be designed to be changed in a regular or irregular manner, such as being changed from small to large, unchanged in size, or changed from large to small, and the like, so as to achieve the above effects.

Preferably, the tail end of the spoiler portion further extends along the axis of the inner ring surface in the direction away from the shielding ring.

In this embodiment, through adopting above structure, through the axis that designs into the interior anchor ring of follow with the end of vortex portion to keeping away from the direction of shield ring extends for the vortex face not only is at the interior disturbance electrolyte of shield ring, also makes the vortex face become more three-dimensional, is favorable to improving the disturbance efficiency of vortex face. In addition, the angle of the electroplating solution flowing out of the turbulent flow surface is also controlled, so that the electroplating solution flows in the preset direction.

Preferably, the shielding ring has one or more spoiler portions, and when there are a plurality of spoiler portions, the respective shapes of the spoiler portions are the same or different, and the spoiler portions are disposed on the inner annular surface at uniform or non-uniform intervals.

In this embodiment, through adopting above structure, through setting up the even interval of a plurality of vortex portions on interior anchor ring, be favorable to improving the disturbance efficiency of vortex face. In other embodiments, the structure can also be designed to be 1 spoiler portion, or can be designed to be a plurality of spoiler portions, and the spoiler portions can also be arranged on the inner ring surface at non-uniform intervals.

Preferably, the turbulent flow portion is one of a hollow shape, a porous shape, a tooth shape, a fan blade shape or a blade shape.

In this embodiment, by adopting the above structure, the hollow-out, porous, toothed, fan-blade or paddle-shaped turbulence portion is utilized, which is beneficial to improving the turbulence efficiency of the turbulence surface.

Preferably, the shielding ring further comprises a connecting portion, and the connecting portion is disposed between the spoiler portions, so that the spoiler portions are connected to form an integral structure.

In this embodiment, through adopting above structure, through setting up connecting portion to utilize connecting portion to couple together vortex portion, be favorable to improving the stability of vortex portion, thereby be favorable to the flow direction of better control electrolyte. In addition, the space between the connecting part, the inner ring surface of the shielding ring and the two turbulence parts forms a grid shape, and the grid-shaped space can also enhance the disturbance effect on the electrolyte.

Preferably, the shield ring is made of an insulating material. Preferably, the insulating material is one or more of polypropylene, high density polyethylene, polyvinylidene fluoride or polytetrafluoroethylene, and a plurality of insulating materials are connected with each other by a plastic welding process.

In this embodiment, the above structure is adopted, and the shielding ring made of an insulating material is used, so that the interference of the shielding ring on electric field lines in the plating solution can be reduced. The shielding ring is made of materials such as polypropylene, high-density polyethylene, polyvinylidene fluoride or polytetrafluoroethylene, so that the application range of the shielding ring is favorably enlarged, and the cost of the shielding ring is favorably reduced.

Preferably, the outer side surface of the shielding ring is circular, and the diameter of the outer side surface is 95% -110% of the diameter of the wafer; and/or the diameter of the inner ring surface is 80% -90% of the diameter of the outer side surface.

In this embodiment, through adopting above structure, through associating the diameter of the lateral surface of shielding ring and interior anchor ring with the wafer for the shielding ring can make corresponding design to the problem that the plating layer of wafer edge is thicker, has the thickness that reduces the plating layer of wafer edge, is favorable to improving the homogeneity of the plating layer of wafer.

Preferably, the diameter of the outer side face is 327 mm; and/or the diameter of the inner ring surface is 277 mm.

In this embodiment, through adopting above structure, through the size design of shield ring for above-mentioned size, can effectually have the thickness that reduces the electroplated layer at wafer edge, be favorable to improving the homogeneity of the electroplated layer of wafer. In this embodiment, the uniformity of the thickness of the plating layer of a 300mm wafer can be made 2%.

Preferably, the outer side surface of the shielding ring is provided with a groove, and the cross section of the groove is arc-shaped.

Preferably, the thickness between the inner ring surface and the outer side surface is uniform; or the thickness between the inner ring surface and the outer side surface is thinned from inside to outside along the radial direction;

preferably, the length of the turbulent flow part ranges from 13mm to 15 mm;

preferably, the length of the spoiler along the radial direction of the inner ring surface ranges from 10mm to 13 mm.

In this embodiment, by adopting the above structure, the groove is utilized to facilitate fixing the shield ring, or fixing the shield ring in a rotatable manner. The requirements of the shielding ring on the manufacturing process are favorably reduced, and the manufacturing cost of the shielding ring is reduced. Through designing vortex portion in above-mentioned length within range for vortex portion is favorable to improving disturbance efficiency at the within range of predetermineeing to the disturbance effect of plating solution.

Preferably, the shielding ring further comprises a driving part, the driving part is arranged on the side surface of the shielding ring, and the driving part is used for receiving the action of the electroplating solution so as to rotate the shielding ring.

In this embodiment, through adopting above structure, utilize the drive division for the screening ring can rotate, thereby can better control the flow direction of plating solution, be favorable to improving the homogeneity of plating solution, be favorable to improving the electroplating quality of wafer.

Preferably, the driving portions are arranged at even intervals in the circumferential direction of the inner ring surface.

In this embodiment, through adopting above structure, set up the drive division through the even interval of circumference, be favorable to the drive division to produce even drive power to make the shielding ring rotate at the uniform velocity, be favorable to improving the controllability of plating solution flow direction, be favorable to improving the electroplating quality of wafer. The drive part can be designed as a rectangular block, which is arranged on the side of the shielding ring.

A shielding device for wafer electroplating is characterized by comprising the shielding ring.

In this embodiment, through adopting above structure, utilize the shield assembly including the shielding ring for the shielding ring can be simpler, reliable installation to electroplating device, also is favorable to guaranteeing the disturbance effect of shielding ring to the plating solution.

Preferably, the first and second liquid crystal films are made of a polymer,

the shielding device further comprises a fixing part, the fixing part is provided with a through hole, the shielding ring is rotatably arranged in the through hole, and the fixing part is used for installing the shielding ring into electroplating equipment; and/or the shielding device further comprises a power part, and the power part acts on the shielding ring to enable the shielding ring to rotate; and/or, the shielding device is also provided with a sinking groove, and the shielding ring is clamped in the sinking groove.

In this embodiment, through adopting above structure, utilize the fixed part to improve the reliability of shield ring, also made things convenient for shield ring to install to electroplating device. By utilizing the sinking groove, the shielding ring can be better attached to the bottom of the sinking groove, and the stability of the shielding ring is favorably improved.

Preferably, the shielding device further comprises a ball disposed between the shielding ring and the sink groove.

In this embodiment, through adopting above structure, utilize the ball, reduced the resistance of shield ring in the rotation process, also be favorable to improving the homogeneity of shield ring slew velocity.

Preferably, the shielding device further comprises a power portion acting on the shielding ring to rotate the shielding ring.

In this embodiment, through adopting above structure, utilize power portion, the rotation of control shield ring that can be better is favorable to the regulation of shield ring slew velocity, is favorable to improving the degree of consistency of the plating layer of wafer.

Preferably, the power portion comprises a driving wheel, a side surface of the driving wheel is a friction surface, a side surface of the shielding ring abuts against the friction surface, and when the driving wheel rotates, the friction surface acts on the shielding ring to rotate the shielding ring; preferably, when the shielding device includes the fixing portion and the power portion, the driving wheel is rotatably connected to the fixing portion.

In this embodiment, through adopting above structure, utilize the frictional force between action wheel and the shield ring to drive the shield ring and rotate, simplified the design form of power portion.

Preferably, the outer side surface of the driving wheel is provided with a belt groove.

In this embodiment, through adopting above structure, set up the race through the outside at the action wheel for the action wheel can utilize the belt to be connected with motor or other power parts, has realized the rotation of action wheel. The structural form of the driving wheel is also simplified.

Preferably, the power part further comprises an auxiliary wheel, and the auxiliary wheel is arranged on the side surface of the shielding ring in a pressing mode.

In this embodiment, through adopting above structure, utilize the auxiliary wheel to push down the shielding ring, be favorable to improving the stability of shielding ring, avoid the shielding ring atress too big emergence deformation.

Preferably, the number of the auxiliary wheels is two, and the distances between the two auxiliary wheels and the driving wheel are equal.

In this embodiment, through adopting above structure, through designing two auxiliary wheels for the distance with the action wheel is equal, has optimized the stress state of shielding ring.

Preferably, the fixing part comprises a clamping plate and a connecting plate, the clamping plate is arranged on one side surface of the connecting plate, clamping grooves are formed in two ends of the clamping plate, and the clamping grooves are used for clamping the electroplating equipment; the through hole is arranged in the center of the connecting plate.

In this embodiment, by adopting the above structure, the design form of the fixing portion is simplified by the card slot and the card board.

An electroplating device, the electroplating device comprises a cathode and an anode, and is characterized by further comprising the shielding device.

Preferably, the shielding device is disposed between the cathode and the anode, and the end of the spoiler points to the cathode.

In this embodiment, through adopting above structure, utilize the electroplating device including shield assembly, be favorable to adjusting the flow condition of plating solution to be favorable to reducing the thickness of the plating layer at wafer edge, be favorable to improving the homogeneity of the thickness of wafer plating layer. In this embodiment, the uniformity of the thickness of the plating layer of a 300mm wafer can be made 2%.

Preferably, the shielding means is closer to the cathode than to the anode.

In this embodiment, through adopting above structure, set up shield assembly in the position that is closer to the negative pole, be favorable to more effectively adjusting the thickness of wafer electroplated layer.

Preferably, the distance between the shielding device and the cathode can be adjusted; and/or the distance between the shielding device and the cathode is in the range of 3mm-10 mm; and/or the electroplating equipment comprises a plurality of shielding devices which are arranged in parallel.

In this embodiment, through adopting above structure, the distance design of shield assembly and negative pole is for adjusting, is favorable to according to the timely distance between adjustment shield assembly and the negative pole of actual conditions, is favorable to improving electroplating equipment application range. The combined action of the shielding devices is beneficial to more effectively adjusting the thickness of the wafer electroplated layer.

Preferably, the spoiler of the shield ring rotates in a clockwise direction as viewed from the shielding means toward the cathode; the shield ring rotates at a speed of 100RPM to 200 RPM.

In the embodiment, by adopting the structure, the rotation speed of the shielding ring is designed to be 100RPM-200RPM, so that the uniformity of the electroplated layer of the wafer is improved.

On the basis of the common knowledge in the field, the above preferred conditions can be combined at will to obtain the preferred embodiments of the present invention.

The utility model discloses an actively advance the effect and lie in:

the utility model discloses a set up the shield ring before the wafer for the plating solution need flow through the shield ring earlier, when the shield ring was flowed through to the plating solution, the vortex portion that is located the interior anchor ring of shield ring can make the plating solution take place to rotate, thereby is favorable to improving the homogeneity of wafer plating layer.

Drawings

Fig. 1 is a schematic structural diagram of a shield ring according to embodiment 1 of the present invention.

Fig. 2 is another schematic structural diagram of the shield ring according to embodiment 1 of the present invention.

Fig. 3 is a schematic structural diagram of a shield ring according to embodiment 2 of the present invention.

Fig. 4 is a schematic structural diagram of a shielding device according to embodiment 3 of the present invention.

Fig. 5 is another schematic structural diagram of the shielding device according to embodiment 3 of the present invention.

Fig. 6 is a schematic structural diagram of a shielding device according to embodiment 4 of the present invention.

Fig. 7 is a schematic structural diagram of a shielding device according to embodiment 5 of the present invention.

Description of reference numerals:

shielding ring 100

Turbulent flow part 11

Turbulent surface 111

Inner ring surface 12

Drive unit 13

Shielding device 200

Fixed part 21

Card slot 211

Drive wheel 22

Auxiliary wheel 23

Detailed Description

The present invention will be more clearly and completely described below by way of examples and with reference to the accompanying drawings, but the present invention is not limited thereto.

Example 1

As shown in fig. 1 and fig. 2, the present embodiment is a shielding ring 100 for wafer plating, the shielding ring 100 includes a spoiler 11, the spoiler 11 is connected to an inner annular surface 12 of the shielding ring 100, and the spoiler 11 is used for disturbing a plating solution of a plated wafer, so that the wafer is uniformly plated. In this embodiment, by adopting the above structure, the shielding ring 100 is disposed in front of the wafer, so that the plating solution needs to flow through the shielding ring 100 first, and when the plating solution flows through the shielding ring 100, the spoiler 11 located on the inner annular surface 12 of the shielding ring 100 can promote the rotation of the plating solution, thereby facilitating the improvement of the uniformity of the wafer plating layer.

As a preferred embodiment, the spoiler 11 may further have a spoiler surface 111, the spoiler surface 111 extends toward the axis of the inner annular surface 12, and from the connection between the spoiler portion 11 and the inner annular surface 12 to the end of the spoiler portion 11, the area of the projection of the spoiler surface 111 in the plane perpendicular to the inner annular surface 12 is first larger and then smaller. In the embodiment, the turbulence surface 111 is arranged on the turbulence part 11, so that the turbulence part 11 can better disturb the flow of the electroplating solution; in the embodiment, the turbulent flow surface 111 is designed to extend along the axial direction of the inward annular surface 12, so that the area of the turbulent flow surface 111 is increased, the turbulent flow surface 111 can contact more electroplating solution, and the improvement of the disturbance efficiency of the turbulent flow surface 111 is facilitated; the area of the projection of the turbulent flow surface 111 in the plane perpendicular to the inner ring surface 12 is designed to be larger and smaller, that is, the turbulent flow surface 111 is twisted during the extending process of the turbulent flow surface 111, so that the area of the projection of the turbulent flow surface 111 in the plane perpendicular to the inner ring surface 12 is gradually increased; then the spoiler 111 is twisted in the opposite direction, so that the area of the projection of the spoiler 111 in the plane perpendicular to the inner ring surface 12 becomes smaller gradually. The design form of the flow-disturbing surface 111 enables the flow-disturbing surface 111 to contact more electroplating solution at the same time, and is beneficial to improving the disturbance efficiency of the flow-disturbing surface 111. In other embodiments, the area of the projection of the turbulent surface 111 in the plane perpendicular to the inner ring surface may be designed to be changed regularly or irregularly, such as being changed from small to large, unchanged, or changed from large to small, and the like, so as to achieve the above effects.

As an embodiment, the end of the spoiler 11 may also extend along the axis of the inner annular surface 12 in a direction away from the shield ring 100. In the embodiment, the tail end of the spoiler 11 is designed to extend in the direction away from the shielding ring 100 along the axis of the inner ring surface 12, so that the spoiler surface 111 not only disturbs the electrolyte in the shielding ring 100, but also makes the spoiler surface 111 become more three-dimensional, which is beneficial to improving the disturbance efficiency of the spoiler surface 111. In addition, it is also advantageous to control the angle of the plating liquid flowing out of the turbulent flow surface 111 so that the plating liquid flows in a predetermined direction.

In this embodiment, as shown in fig. 1, the shielding ring 100 may further have a plurality of spoiler portions 11, and the spoiler portions 11 are disposed on the inner annular surface 12 at regular intervals. The present embodiment is advantageous to improve the disturbance efficiency of the disturbance surface 111 by disposing a plurality of disturbance portions 11 on the inner annular surface 12 at uniform intervals. In other embodiments, 1 spoiler 11 may be designed, a plurality of spoilers 11 may be designed, and the plurality of spoilers 11 may also be disposed on the inner annular surface 111 at non-uniform intervals, and of course, the respective shapes of the plurality of spoilers 11 may be the same or different, and all of the above effects may be achieved.

In other embodiments, the shape of the spoiler 11 may be designed as one of a hollow, a porous, a tooth, a fan blade, or a paddle blade. In this embodiment, the hollow-out, porous, toothed, fan-blade-shaped or blade-shaped spoiler 11 is utilized to improve the disturbing efficiency of the spoiler surface 111.

In order to improve the stability of the spoiler 11, the shield ring 100 may further include a connecting portion disposed between the spoiler 11 so that the spoiler 11 is connected as an integral structure. This embodiment is through setting up connecting portion to utilize connecting portion to connect vortex portion 11, be favorable to improving vortex portion 11's stability, thereby be favorable to the flow direction of better control electrolyte. In addition, the space between the connecting portion, the inner ring surface 12 of the shield ring 100, and the two spoiler portions 11 forms a grid-like space, and the grid-like space can also enhance the disturbance action on the electrolyte.

As a preferred embodiment, the shielding ring 100 may also be made of an insulating material. In the present embodiment, the shielding ring 100 made of an insulating material is used to reduce the interference of the shielding ring 100 to the electric field lines in the plating solution. Specifically, the insulating material is one or more of polypropylene, high-density polyethylene, polyvinylidene fluoride or polytetrafluoroethylene, and the multiple insulating materials can be connected by adopting a plastic welding process. In this embodiment, the shielding ring 100 is made of polypropylene, high-density polyethylene, polyvinylidene fluoride, or polytetrafluoroethylene, which is beneficial to increasing the application range of the shielding ring 100 and reducing the cost of the shielding ring 100.

In this embodiment, the outer side surface of the shielding ring 100 may also be designed to be circular, and the diameter of the outer side surface may also be designed to be 95% -110% of the diameter of the wafer to be plated. The diameter of the inner annular surface 12 may also be 80% to 90% of the diameter of the outer lateral surface. In the embodiment, the outer side surface and the inner ring surface 12 of the shielding ring 100 are associated with the diameter of the wafer, so that the shielding ring 100 can be designed correspondingly to the problem that the electroplated layer on the edge of the wafer is thick, the thickness of the electroplated layer on the edge of the wafer is reduced, and the uniformity of the electroplated layer on the wafer is improved. Specifically, the diameter of the outer side surface of the shield ring 100 is designed to be 327mm, and the diameter of the inner ring surface 12 is 277 mm. In the embodiment, the size of the shielding ring 100 is designed to be the above size, so that the thickness of the electroplated layer on the edge of the wafer can be effectively reduced, and the uniformity of the electroplated layer on the wafer can be improved. In this embodiment, the uniformity of the thickness of the plating layer of a 300mm wafer can be made 2%.

In other embodiments, the outer side surface of the shielding ring 100 is provided with a groove, and the cross section of the groove is circular arc. The embodiment utilizes a groove to facilitate the fixing of the shield ring 100 or the fixing of the shield ring 100 in a rotatable manner.

In order to reduce the requirements of the shield ring 100 on the manufacturing process, the thickness between the inner annular surface 12 and the outer lateral surface of the shield ring 100 may be uniform; or the thickness between the inner annular surface 12 and the outer lateral surface of the shield ring 100 becomes thinner from the inside to the outside in the radial direction. The embodiment is beneficial to reducing the requirements of the shielding ring 100 on the manufacturing process and reducing the manufacturing cost of the shielding ring 100.

As a specific embodiment, the length of the spoiler 11 may range from 13mm to 15 mm. The length of the spoiler 11 in the radial direction of the inner ring surface 12 may also range from 10mm to 13 mm. This embodiment is through designing vortex portion 11 in above-mentioned length range for vortex portion 11 is favorable to improving disturbance efficiency at the within range of predetermineeing to the disturbance effect of plating solution.

Example 2

As shown in fig. 3, this embodiment is a shielding ring 100, and is substantially the same as embodiment 1 except that: the shield ring 100 of the present embodiment further includes a driving portion 13, the driving portion 13 is disposed on a side surface of the shield ring 100, and the driving portion 13 is configured to receive the plating solution to rotate the shield ring 100. The driving portion 13 is utilized in the embodiment, so that the shielding ring 100 can rotate, the flowing direction of the electroplating solution can be better controlled, the uniformity of the electroplating solution can be improved, and the electroplating quality of the wafer can be improved.

In one embodiment, the driving portions 13 are disposed at uniform intervals in the circumferential direction of the inner ring surface 12. The driving portion 13 is arranged at the circumferential uniform interval in the embodiment, so that the driving portion 13 can generate uniform driving force, the shielding ring 100 can rotate at a uniform speed, the controllability of the flowing direction of the electroplating solution can be improved, and the electroplating quality of the wafer can be improved. The drive part 13 may be embodied as a rectangular block, which is arranged on the side of the shielding ring 100.

Of course, in other embodiments, even if the shield ring 100 itself does not move, the uniform plating effect can still be achieved during the wafer plating process as long as there is relative movement (usually planar rotation movement of the wafer) between the wafer and the shield ring 100. When there is relative motion between the wafer and the shield ring 100, the number of the spoiler portions 11 on the shield ring 100 may be 1-2.

Example 3

As shown in fig. 4 and fig. 5, the present embodiment is a shielding apparatus 200 for wafer plating, the shielding apparatus 200 includes a shielding ring 100 as in embodiment 1 or embodiment 2, and the shielding ring 100 can also be as shown in fig. 1 to 3. The embodiment utilizes the shielding device 200 comprising the shielding ring 100, so that the shielding ring 100 can be more simply and reliably mounted to the electroplating equipment, and the disturbing effect of the shielding ring 100 on the electroplating solution can be ensured.

As an embodiment, the shielding apparatus 200 may further include a fixing portion 21, the fixing portion 21 has a through hole, the shielding ring 100 is rotatably mounted in the through hole, and the fixing portion 21 is used for mounting the shielding ring 100 into the electroplating device. The present embodiment improves the reliability of the shield ring 100 using the fixing portion 21, and also facilitates the mounting of the shield ring 100 to the plating apparatus.

In this embodiment, the fixing portion 21 may further include a clamping plate and a connecting plate. The clamping plate is arranged on one side surface of the connecting plate, clamping grooves 211 are formed in two ends of the clamping plate, and the clamping grooves 211 are used for clamping electroplating equipment; the through hole is arranged in the center of the connecting plate. The embodiment simplifies the design of the fixing portion 21 by using the engaging groove 211 and the engaging plate.

As an embodiment, the shielding apparatus 200 may further have a sinking groove, and the shielding ring 100 is clamped in the sinking groove. The embodiment utilizes the sinking groove, so that the shielding ring 100 can be better attached to the bottom of the sinking groove, and the stability of the shielding ring 100 is improved.

In other embodiments, the shielding apparatus 200 further comprises a power portion acting on the shielding ring 100 to rotate the shielding ring 100. The power part is utilized in the embodiment, the rotation of the shielding ring 100 can be better controlled, the adjustment of the rotation speed of the shielding ring 100 is facilitated, and the uniformity of the electroplated layer of the wafer is improved.

In this embodiment, as shown in fig. 4 and 5, the power portion may further include a driving wheel 22, a side surface of the driving wheel 22 is a friction surface, a side surface of the shielding ring 100 abuts against the friction surface, and when the driving wheel 22 rotates, the friction surface acts on the shielding ring 100 to rotate the shielding ring 100. In the embodiment, the friction force between the driving wheel 22 and the shielding ring 100 is utilized to drive the shielding ring 100 to rotate, so that the design form of the power part is simplified. As a preferred embodiment, when the shielding device 200 includes both the fixing portion 21 and the power portion, the power portion is selected as the driving wheel 22, and the driving wheel 22 and the fixing portion 21 can be further configured to be rotatably connected.

In one embodiment, the outer side of the driving wheel 22 may further have a belt groove. In this embodiment, the belt groove is disposed on the outer side of the driving wheel 22, so that the driving wheel 22 can be connected to a motor or other power components by using a belt, and the rotation of the driving wheel 22 is realized. The structural form of the driving wheel 22 is also simplified.

As a preferred embodiment, the power unit further includes an auxiliary wheel 23, and the auxiliary wheel 23 is pressed on the side surface of the shielding ring 100. In this embodiment, the auxiliary wheel 23 is used to press the shielding ring 100, which is beneficial to improving the stability of the shielding ring 100 and preventing the deformation of the shielding ring 100 due to too large stress.

Specifically, as shown in fig. 4 and 5, in the present embodiment, the number of the auxiliary wheels 23 is two, and the distances between the two auxiliary wheels 23 and the driving wheel 22 are equal. The present embodiment optimizes the stress state of the shield ring 100 by designing the two auxiliary wheels 23 to be equidistant from the driving wheel 22.

As an embodiment, the thickness uniformity of the wafer edge before and after the masking was examined under the condition that the entire wafer (12-inch wafer) was plated with a copper film of 10um thickness. When the shielding device 200 of the embodiment is not used, the thickness difference between the highest point and the lowest point reaches 3um within a circular ring range of 10mm inward of the outer edge of the wafer; when the shielding apparatus 200 of the present embodiment is used, the thickness difference between the highest point and the lowest point within the ring range of 10mm inward of the outer edge of the wafer is reduced to 1.6um under the condition that the rotation speed of the shielding ring 100 is 60 rpm.

Example 4

As shown in fig. 6, the present embodiment is a shielding apparatus 200. This embodiment is substantially the same as embodiment 3, except that the projected area of the spoiler 11 of the shield ring 10 of this embodiment in the illustrated plane is larger than the projected area of the spoiler 11 of embodiment 3 in the plane illustrated in fig. 5. In other words, the projected area of the spoiler 11 of the present embodiment is twice the projected area of the spoiler 11 of embodiment 3. The present embodiment increases the projection area of the spoiler 11, thereby enabling the spoiler 11 to generate a larger shielding area. When the wafer is electroplated, the larger shielding area is favorable for improving the influence of the turbulence part 11 on the electroplating solution, thereby being favorable for better controlling the flowing direction of the electroplating solution by the shielding device 200, being favorable for improving the uniformity of the electroplating solution and being favorable for improving the electroplating quality of the wafer.

As a specific implementation manner, in the circumferential direction of the shielding ring 100, the width of the spoiler 11 may also be increased, and the width of the spoiler 11 of the present embodiment may be increased by 1 time compared to the spoiler 11 of the embodiment 3, that is, the width of the spoiler 11 of the present embodiment is twice the width of the spoiler 11 of the embodiment 3. Of course, in other embodiments, the length of the spoiler 11 may be increased or both the length and the width may be increased to increase the shielding area, which is beneficial to improving the influence of the spoiler 11 on the plating solution, so as to facilitate the shielding device 200 to better control the flowing direction of the plating solution, improve the uniformity of the plating solution, and improve the plating quality of the wafer.

As an embodiment, the thickness uniformity of the wafer edge before and after the masking was examined under the condition that the entire wafer (12-inch wafer) was plated with a copper film of 10um thickness. When the shielding device 200 of the embodiment is not used, the thickness difference between the highest point and the lowest point reaches 3um within a circular ring range of 10mm inward of the outer edge of the wafer; when the shielding apparatus 200 of the present embodiment is used, the thickness difference between the highest point and the lowest point in the ring range of 10mm inward of the outer edge of the wafer is reduced to 0.6um under the condition that the rotation speed of the shielding ring 100 is 60 rpm.

Example 5

As shown in fig. 7, the present embodiment is a shielding apparatus 200. This embodiment includes the shield ring 100 of embodiment 2, and the shield ring 100 can also be shown in fig. 3. This embodiment is substantially the same as embodiment 3 except that the shield ring 100 of the shield apparatus 200 of this embodiment directly uses the plating solution as a motive force. Since the shield ring 100 has the driving portion 13, the driving portion 13 can receive the plating liquid to rotate the shield ring 100. The driving portion 13 is utilized in the embodiment, so that the shielding ring 100 can rotate, the flowing direction of the electroplating solution can be better controlled, the uniformity of the electroplating solution can be improved, and the electroplating quality of the wafer can be improved.

Specifically, the shielding ring 100 of the present embodiment is disposed in the sinking groove of the shielding device 200, and the side surface of the shielding ring 100 is tightly attached to the bottom of the sinking groove. The power section of the shield ring 100 pushes the shield ring 100 to rotate under the action of the plating solution. The present embodiment simplifies the structure of the shielding apparatus 200 by using the sink and the power part of the shielding ring 100.

In other embodiments, the shielding device 200 further comprises balls disposed between the shield ring 100 and the sink groove. The embodiment uses balls to reduce the resistance of the shield ring 100 during the rotation process, and is also beneficial to improving the uniformity of the rotation speed of the shield ring 100.

Example 6

This embodiment is an electroplating apparatus, the electroplating apparatus includes a cathode and an anode, the electroplating apparatus further includes a shielding device 200 as in embodiment 3 or embodiment 4, and the shielding device 200 can also be shown in fig. 4-6.

As a preferred embodiment, the shielding device 200 may be disposed between the cathode and the anode, and the end of the spoiler 11 is directed to the cathode. The electroplating equipment comprising the shielding device 200 is utilized in the embodiment, so that the flowing condition of the electroplating solution can be adjusted, the thickness of the electroplated layer on the edge of the wafer can be reduced, and the uniformity of the thickness of the electroplated layer of the wafer can be improved. In this embodiment, the uniformity of the thickness of the plating layer of a 300mm wafer can be made 2%.

As an embodiment, the shielding device 200 may also be closer to the cathode than to the anode. In the embodiment, the shielding device 200 is disposed at a position closer to the cathode, which is beneficial to more effectively adjusting the thickness of the electroplated layer on the wafer.

In this embodiment, the distance between the shielding device 200 and the cathode can also be designed to be adjustable. The distance between the shielding device 200 and the cathode is designed to be adjustable, so that the distance between the shielding device 200 and the cathode can be timely adjusted according to actual conditions, and the application range of the electroplating equipment can be widened. In particular, the distance of the shielding device 200 from the cathode may also range from 3mm to 10 mm.

In other embodiments, the electroplating apparatus includes a plurality of shielding devices 200, and the plurality of shielding devices 200 are arranged in parallel. The present embodiment utilizes the combined action of the shielding devices 200, which is beneficial to more effectively adjusting the thickness of the electroplated layer of the wafer.

As an embodiment, the spoiler 11 of the shield ring 100 may also rotate in a clockwise direction as viewed from the shielding device 200 to the cathode.

The shield ring 100 may also be rotated at a speed of 100RPM to 200RPM as a preferred embodiment. The present embodiment is advantageous to improve uniformity of a plating layer to a wafer by designing a rotation speed of the shield ring 100 to be 100RPM to 200 RPM. Specifically, the speed at which the shield ring 100 of the present embodiment rotates may be one of 130RPM, 150RPM, or 170 RPM.

Example 7

This example is a plating method, and plating was performed using the plating apparatus as in example 5. In the embodiment, by adopting the method, the electroplating equipment containing the shielding ring is used for electroplating the wafer, so that the uniformity of the electroplated layer of the wafer is improved. As an embodiment, during the wafer electroplating process, a shielding device may be used for shielding.

Although specific embodiments of the present invention have been described above, it will be understood by those skilled in the art that this is by way of example only and that the scope of the invention is defined by the appended claims. Various changes and modifications to these embodiments may be made by those skilled in the art without departing from the spirit and the principles of the present invention, and these changes and modifications are all within the scope of the present invention.

Claims

1. The utility model provides a shield ring for the wafer is electroplated, its characterized in that, the shield ring includes vortex portion, vortex portion with the interior anchor ring of shield ring is connected, vortex portion is used for the disturbance electroplating the plating solution of wafer, so that the wafer is by even electroplating.

2. The shield ring of claim 1, wherein the spoiler portion has a spoiler surface, the spoiler surface extends toward an axis of the inner ring surface, and from a connection of the spoiler portion and the inner ring surface to a distal end of the spoiler portion, an area of a projection of the spoiler surface in a plane perpendicular to the inner ring surface is alternately larger and smaller, unchanged in size, or larger and smaller.

3. The shield ring of claim 2, wherein the tip of the spoiler portion further extends along an axis of the inner annular surface in a direction away from the shield ring.

4. The shield ring as claimed in claim 2, wherein the shield ring has one or more spoiler portions, and when plural, the respective shapes of the spoiler portions are the same or different, and the spoiler portions are provided at uniform or non-uniform intervals on the inner circumferential surface.

5. The shield ring of claim 2, wherein the turbulator is shaped as one of a hollow, a porous, a tooth, a fan, or a paddle.

6. The shield ring of claim 2, further comprising a connecting portion disposed between the turbulators to connect the turbulators as a unitary structure.

7. The shield ring of claim 2, wherein the shield ring is made of an insulating material.

8. The shield ring of claim 7, wherein the insulating material is one or more of polypropylene, high density polyethylene, polyvinylidene fluoride, or polytetrafluoroethylene, and a plurality of the insulating materials are connected by a plastic welding process.

9. The shield ring of claim 2, wherein an outer side of the shield ring is circular, the outer side having a diameter of 95% -110% of a diameter of the wafer;

and/or the diameter of the inner ring surface is 80% -90% of the diameter of the outer side surface.

10. The shield ring of claim 9, wherein the outer side has a diameter of 327 mm; and/or the diameter of the inner ring surface is 277 mm.

11. The shield ring according to claim 9, wherein the outer side of the shield ring is provided with a groove having a circular arc-shaped cross section;

and/or the thickness between the inner ring surface and the outer side surface is uniform; or the thickness between the inner ring surface and the outer side surface is thinned from inside to outside along the radial direction;

and/or the length range of the turbulent flow part is 13mm-15 mm;

and/or the length of the turbulent flow part along the radial direction of the inner ring surface ranges from 10mm to 13 mm.

12. The shield ring of claim 2, further comprising a drive portion disposed on a side of the shield ring, the drive portion configured to receive the plating solution to rotate the shield ring.

13. The shield ring of claim 12, wherein the driver portions are evenly spaced circumferentially of the inner annular surface.

14. A shield arrangement for wafer plating, the shield arrangement comprising a shield ring according to any one of claims 1-13.

15. The shielding apparatus of claim 14, further comprising a fixing portion having a through hole, the shielding ring being rotatably mounted in the through hole, the fixing portion being configured to mount the shielding ring in an electroplating device;

and/or the shielding device further comprises a power part, and the power part acts on the shielding ring to enable the shielding ring to rotate;

and/or, the shielding device is also provided with a sinking groove, and the shielding ring is clamped in the sinking groove.

16. The shield of claim 15, further comprising a ball bearing disposed between the shield ring and the counterbore.

17. The shielding apparatus of claim 15, wherein the power portion includes a driving wheel, a side surface of the driving wheel is a friction surface, and a side surface of the shielding ring abuts against the friction surface, and when the driving wheel rotates, the friction surface acts on the shielding ring to rotate the shielding ring; preferably, when the shielding device includes the fixing portion and the power portion, the driving wheel is rotatably connected to the fixing portion.

18. The shielding device of claim 17, wherein the outer side of said drive wheel has a belt groove.

19. The shielding device of claim 17, wherein said power section further comprises an auxiliary wheel pressed against a side of said shield ring.

20. The shielding device of claim 19, wherein said auxiliary wheels are two in number, and wherein said two auxiliary wheels are equidistant from said primary wheel.

21. The shielding device of claim 15, wherein the fixing portion comprises a clamping plate and a connecting plate, the clamping plate is disposed on one side of the connecting plate, and clamping grooves are formed at two ends of the clamping plate and used for clamping the electroplating equipment; the through hole is arranged in the center of the connecting plate.

22. An electroplating apparatus comprising a cathode and an anode, wherein the electroplating apparatus further comprises a shielding device according to any one of claims 14 to 21.

23. The plating apparatus as recited in claim 22, wherein said shielding means is disposed between said cathode and said anode, and a tip of said spoiler is directed toward said cathode.

24. The electroplating apparatus of claim 22, wherein the shielding means is closer to the cathode than the anode.

25. The plating apparatus as recited in claim 22, wherein a distance of said shielding means from said cathode is adjustable;

and/or the distance between the shielding device and the cathode is in the range of 3mm-10 mm;

and/or the electroplating equipment comprises a plurality of shielding devices which are arranged in parallel.

26. The plating apparatus as recited in claim 22, wherein the spoiler portion of the shield ring rotates in a clockwise direction as viewed from the shielding means toward the cathode; preferably, the rotation speed of the rotation is 100RPM to 200 RPM.