CN114097072B - Wafer carrying disc and wafer epitaxial device - Google Patents
Wafer carrying disc and wafer epitaxial device Download PDFInfo
- Publication number
- CN114097072B CN114097072B CN201980098322.5A CN201980098322A CN114097072B CN 114097072 B CN114097072 B CN 114097072B CN 201980098322 A CN201980098322 A CN 201980098322A CN 114097072 B CN114097072 B CN 114097072B
- Authority
- CN
- China
- Prior art keywords
- wafer
- groove
- reaction gas
- wafer carrier
- tray
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Active
Links
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
Landscapes
- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Chemical Vapour Deposition (AREA)
Abstract
The invention provides a wafer carrying disc and wafer epitaxy equipment, and relates to the technical field of chemical deposition devices; a guide surface is arranged at the edge of the notch of the groove; the flow guiding surface is obliquely arranged relative to the wafer and extends from the notch of the groove to the bottom direction of the groove. The wafer carrying disc relieves the technical problem of poor deposition quality of the epitaxial layer at the edge of the wafer, and achieves the purpose of improving the deposition quality of the epitaxial layer at the edge of the wafer.
Description
Technical Field
The invention relates to the technical field of chemical deposition devices, in particular to a wafer carrying disc and wafer epitaxial equipment.
Background
In a conventional thin film preparation process, for example, metal-organic chemical vapor deposition (Metal-organic Chemical Vapor Deposition, abbreviated as MOCVD), a wafer carrier is usually placed in a reaction container, a wafer substrate is placed in a groove of the wafer carrier, and then various reactive gases are introduced into the reaction container, and flow from the central portion of the wafer carrier to the periphery, so that a thin film layer is formed on the surface of the wafer substrate by deposition.
The wafer carrier plate used in the prior art can cause that the reaction gas can not be effectively deposited at the edge of the wafer, so that the epitaxial layer at the edge of the wafer is different from the epitaxial layers at other positions of the wafer, and the epitaxial deposition quality at the edge of the wafer is poor, thereby reducing the yield of products.
The following technical solutions are specifically proposed to address the above problems.
Disclosure of Invention
The first objective of the present invention is to provide a wafer carrier to alleviate the technical problem of poor epitaxial deposition effect at the wafer edge when the prior art wafer carrier is used for epitaxial deposition.
A second object of the present invention is to provide a wafer epitaxial apparatus comprising the above wafer carrier tray.
In order to achieve the above purpose, the following technical scheme is adopted:
a wafer carrier tray comprising:
a tray body;
the groove is arranged on the tray body;
and the flow guide surface is arranged on the side wall of the tray body, and is arranged at the position of the reaction gas inlet and is obliquely arranged relative to the wafer.
Further, the height H of the guide surface is more than or equal to H 1 -H 2 The height H of the flow guiding surface is less than or equal to H 1 ；
Wherein H is 1 Depth of groove H 2 Is the wafer thickness.
Further, the side wall of the groove is perpendicular to the bottom surface of the groove.
Further, the angle range of the central angle corresponding to the circumferential arc length of the guide surface along the groove is not greater than 180 °, and preferably the angle range is not greater than 120 °.
A wafer epitaxy apparatus includes the wafer carrying tray.
Compared with the prior art, the invention has the following beneficial effects:
in the wafer carrying disc provided by the invention, the edge of the notch of the groove is provided with the guide surface; because the flow guiding surface is obliquely arranged relative to the wafer, the reaction gas flows through the flow guiding surface and then contacts with the edge of the wafer in the groove, and then flows to other parts of the wafer from the edge of the wafer corresponding to the flow guiding surface.
In the process of flowing the reactive gas into the groove, the arrangement of the flow guide surface changes the flow direction of the reactive gas, so that the flow direction of the reactive gas is changed from the incident direction which is originally parallel to the surface of the wafer to the direction of obliquely downwards blowing the reactive gas towards the wafer, and the reactive gas is contacted with the edge of the wafer first and then flows towards the gas part of the wafer. The contact probability of the reaction gas and the wafer edge is increased due to the change of the flow direction of the reaction gas, the epitaxial deposition quality of the wafer edge is improved, and the epitaxial deposition quality at the wafer edge is more consistent with that of other positions of the wafer, so that the yield of the wafer epitaxial process is improved.
Drawings
In order to more clearly illustrate the embodiments of the present invention or the technical solutions in the prior art, the drawings that are needed in the description of the embodiments or the prior art will be briefly described, and it is obvious that the drawings in the description below are some embodiments of the present invention, and other drawings can be obtained according to the drawings without inventive effort for a person skilled in the art.
FIGS. 1a-1b are schematic top plan views of wafer carrier trays of the prior art;
FIG. 2 is an enlarged schematic view of the cross-sectional structure of FIG. 1b taken along line A-A' of FIG. 1 a;
FIGS. 3a-3c are schematic top plan views of wafer carrier trays according to embodiments of the present invention;
FIG. 4 is an enlarged schematic view of the cross-sectional structure of structure A-A' of FIG. 3 c;
FIG. 5 is a schematic cross-sectional view of a portion A-A' of another embodiment of a wafer carrier tray of the structure shown in FIGS. 3a-3 b;
FIG. 6 is a schematic cross-sectional view of a portion A-A' of another embodiment of a wafer carrier tray of the structure shown in FIGS. 3a-3 b;
FIG. 7 is a schematic cross-sectional view of a portion A-A' of another embodiment of a wafer carrier tray of the construction shown in FIGS. 3a-3 b;
FIG. 8 is a schematic view of the placement of the flow guide surface when the wafer carrier is rotated counterclockwise;
fig. 9 is a schematic top view of another embodiment of a wafer carrier tray of the present invention.
Icon: 10-a tray body; 30-wafer; 20-grooves; 40-steps; 21-a flow guiding surface; 23-diversion trenches; curve 31-direction of reactant gas flow; h-height difference between the recess and the wafer; height of the H-guide surface; h 1 Depth of groove, H 2 Wafer thickness, angle of inclination of the α -guide surface; and beta is set to the central angle corresponding to the circumferential size of the notch at the position of the diversion surface.
Detailed Description
The following description of the embodiments of the present invention will be made apparent and fully in view of the accompanying drawings, in which some, but not all embodiments of the invention are shown. All other embodiments, which can be made by those skilled in the art based on the embodiments of the invention without making any inventive effort, are intended to be within the scope of the invention.
In the description of the present invention, it should be noted that the directions or positional relationships indicated by the terms "center", "upper", "lower", "left", "right", "vertical", "horizontal", "inner", "outer", etc. are based on the directions or positional relationships shown in the drawings, are merely for convenience of describing the present invention and simplifying the description, and do not indicate or imply that the devices or elements referred to must have a specific orientation, be configured and operated in a specific orientation, and thus should not be construed as limiting the present invention. Furthermore, the terms "first," "second," and "third" are used for descriptive purposes only and are not to be construed as indicating or implying relative importance.
In the description of the present invention, it should be noted that, unless explicitly specified and limited otherwise, the terms "mounted," "connected," and "connected" are to be construed broadly, and may be either fixedly connected, detachably connected, or integrally connected, for example; can be mechanically or electrically connected; can be directly connected or indirectly connected through an intermediate medium, and can be communication between two elements. The specific meaning of the above terms in the present invention can be understood by those of ordinary skill in the art according to the specific circumstances.
Specific embodiments of the present invention will be described in further detail below with reference to the accompanying drawings.
FIGS. 1a, 1b and 2 are prior art wafer carrier trays, which include a tray body 10, a recess 20 provided in the tray body, FIG. 1a is a schematic top view of the wafer carrier tray 10, FIG. 1b is a schematic top view of the wafer carrier tray 10 after a substrate 30 is placed in the recess 20 of the wafer carrier tray 10, FIG. 2 is a schematic top view of the structure shown in FIG. 1bA schematic cross-sectional structure of A-A' in fig. 1a, wherein the direction of arrow of curve 31 in fig. 1b and 2 shows the flow direction of the deposition source gas. As shown in fig. 2, in the conventional wafer carrier plate, the groove depth H 1 Slightly greater than the thickness H of the wafer 2 And the side walls of the groove mouth are perpendicular to the surface of the wafer placed in the groove. Due to the height difference H between the grooves of the wafer carrier tray and the wafer (h=h 1 -H 2 ) Wherein H is 1 Depth of groove H 2 Is the wafer thickness. When the arrow direction of the deposition source gas curve 31 gradually flows from the surface of the disk body to the wafer at a high rotation speed, the height difference h has a certain shielding effect on the edge of the wafer, and at this time, the reaction gas is less in contact with the wafer at the edge of the wafer, so that the reaction gas cannot be effectively deposited at the edge (for example, the area 4 in the figure), the epitaxial layer at the edge of the wafer is different from the epitaxial layers at other positions of the wafer, and the epitaxial deposition quality at the edge of the wafer is poor, thereby reducing the yield of products.
Fig. 3a is a schematic top view of a wafer carrier of the present invention, which provides a wafer carrier including:
the wafer tray comprises a tray body 10, a groove 20 arranged on the tray body 10 and used for placing the wafer, and a flow guide surface 21 arranged on the side wall of the tray body, wherein the flow guide surface is arranged at the position of a reaction gas inlet and is obliquely arranged relative to the wafer.
Referring to fig. 4 to 6, the reactive gas current 31 flows from the central portion of the disk 10 to the periphery, the reactive gas current is concentrated to flow into the grooves, and the corresponding position of the concentrated reactive gas current to flow into the grooves is defined as the reactive gas inlet position.
In this embodiment, the edge of the side of the guiding surface 21 away from the groove 20 may be a straight line, as shown in fig. 3 a; in other embodiments, an edge of the guide surface 21 away from the groove 20 may be curved, as shown in fig. 3 b. The specific line of the edge of the side of the guiding surface 21 away from the groove 20 is not limited.
In this embodiment, the recess 20 is used to place the wafer 30, and after the wafer 30 is placed in the recess 20, as shown in fig. 3c, the tray 10 is placed in an epitaxy apparatus, and an epitaxial layer is formed on the surface of the wafer 30 by flowing deposition source gas in the epitaxy apparatus. In the epitaxial deposition process, the wafer is placed in the groove, so that the wafer can be prevented from sliding freely in the tray body.
In the present embodiment, 3 grooves 20 are provided, however, the number of the grooves 20 is not limited to this, and may be more or less. It will be appreciated by those skilled in the art that the size of the grooves 20, the number and location of the grooves 20 may be flexibly set to meet the process requirements of wafers of different sizes (e.g., 8 inches, 6 inches in diameter) depending on the size of the wafer carrier tray.
It will be appreciated that the particular material of the wafer carrier plate is not particularly limited in the present invention and may be, for example, a high melting point solid material such as graphite or molybdenum.
In this embodiment, the recess 20 is preferably circular in shape to match the general shape of wafers in the art. However, the shape of the recess 20 is not particularly limited in the present invention, and may be set according to the shape of the wafer.
In this embodiment, to ensure that the wafer is effectively fixed in the groove, the angle β of the central angle formed by the circumferential arc length of the guide surface 21 and the center of the groove 20 cannot be too large, and the range β is not greater than 180 ° and preferably not greater than 120 °. Specifically, as shown in fig. 3a-3c, the guide surface 21 is disposed along the circumferential direction of the groove 20 (refer to fig. 4-6), and the central angle β corresponding to the arc length of the guide surface 21 along the circumferential direction of the groove 20 is less than or equal to 180 °, preferably not greater than 120 °.
Fig. 4 to 6 are schematic cross-sectional structures of the structure shown in fig. 3c along A-A', wherein the arrow direction of the curve 31 in fig. 3c and 4 shows the flow direction of the deposition source gas. Wherein, the deposition source gas can be a high-purity metal organic source, namely an M0 source.
In this embodiment, the deposition source gas inlet position refers to an inlet position where a flow of the deposition source gas flows from the disk body to the recess during the epitaxial deposition process. In other embodiments, the inlet position may be adjusted based on the direction of flow of the source gas, such as when the disk 10 is rotated, the direction of the gas flow may be changed. Specifically, in actual operation, when the wafer carrier is rotated counterclockwise or clockwise, the reaction gas is not directly blown to the groove 20, and the reaction gas is also deflected, so that the arrangement of the guide grooves 21 on the groove 20 is also inclined to some extent. When the wafer carrier is rotated counterclockwise, the arrangement position of the diversion trench 21 is shown in fig. 8. When the wafer carrier is rotated clockwise, the diversion trench 21 is disposed at a position opposite to the deflection angle in fig. 8. The specific arrangement position of the diversion trench 21 is determined according to the rotation direction of the wafer carrying tray.
In this embodiment, a guiding surface 21 is disposed on a sidewall of the tray body at the position of the reactive gas inlet, the guiding surface 21 is disposed obliquely with respect to the wafer 30, and the bottom of the groove 20 of the guiding surface 21 extends. Wherein, the direction of the guide surface 21 toward the bottom of the groove 20 means: on the line between any point at the notch where the flow guiding surface 21 is located and any point on the bottom surface of the groove, the direction from the notch to the bottom surface.
After the reaction gas flows through the guide surface 21, the reaction gas contacts the edge of the wafer 30 placed in the groove 20, and then flows to other parts of the wafer 30 from the edge of the wafer 30 corresponding to the guide surface 21.
The angle of inclination of the guide surface 21 should be less than 90 deg. in order to make the quality of epitaxial deposition at the wafer edge better, preferably the angle of inclination of the guide surface 21 is 10 deg. -60 deg., as long as the guide surface 21 has an angle of inclination with respect to the vertical plane, which reduces the quality of epitaxial deposition at the wafer edge. Here, the inclination angle of the guide surface refers to an angle α between the guide surface 21 and the surface of the wafer 30, and in fig. 4, the angle α is shown as an angle between the guide surface 21 and the surface of the tray 10 for convenience of marking, in which case the surface of the tray 10 is parallel to the surface of the wafer 30, as shown in fig. 4.
Referring to FIGS. 4 to 6, the height H of the guide surface 21 is equal to or greater than H 1 -H 2 The height H of the flow guiding surface is less than or equal to H 1 ；H 1 Depth of groove H 2 Is the wafer thickness. Wherein the depth of the groove H 1 Is the distance from the surface of the tray 10 to the bottom of the recess. In this design, the bottom edge of the guide surface 21 is flush with the surface of the wafer 30 or lower than the surface of the wafer 30, so that the reaction gas can be ensuredThe gas flow can smoothly flow through the edge of the wafer, and the reaction gas can be fully contacted with the edge of the wafer, so that the epitaxial deposition quality of the edge of the wafer is improved, and the difference between the deposition quality of the edge of the wafer 30 and the deposition quality of the center of the wafer 30 is reduced. The height of the guide surface 21 is smaller than or equal to the depth of the groove, and when the height of the guide surface 21 is equal to the depth of the groove, the wafer carrying disc has higher universality and can be suitable for wafers with different thicknesses.
Specifically, as shown in fig. 4 to 6, the bottom of the guide surface 21 may be directly connected to the upper surface of the wafer 30; in other embodiments, the bottom of the guide surface 21 may be connected to the sidewall of the wafer 30, as shown in fig. 5; it will be appreciated that the bottom of the guide surface 21 may be connected to the bottom surface of the wafer 30, as shown in fig. 6; the present case is not limited thereto, so long as the included angle between the guide surface 21 and the horizontal plane is ensured, i.e., the inclination angle α of the guide surface 21 is in the range of 10-60 °, and the height H of the guide surface 1 ≥H≥H 1 -H 2 (H 1 Depth of groove H 2 Wafer thickness).
The present invention is not particularly limited to the structure of the flow guide surface 21, as long as the flow direction of the reactive gas flow can be changed so that the reactive gas flow smoothly flows over the wafer edge and is sufficiently contacted with the wafer edge. The flow guiding surface 21 may be a plane surface or a curved surface (as shown in fig. 7), and the front projection view of the flow guiding surface 21 may be a trapezoid or the like, which is not limited in this case, as long as the direction of the flow of the reaction gas is changed.
In this embodiment, the side walls of the recess 20 are perpendicular to the bottom surface of the recess 20, so as to prevent the wafer 30 from slipping during the epitaxial deposition process.
In the wafer carrier tray of the present embodiment, the flow guiding surface 21 is provided at the notch of the groove for changing the flow direction of the reaction gas, specifically, see the arrow direction in fig. 4 to 6, and the arrow direction in fig. 4 to 6 shows the flow direction of the reaction gas. The change of the direction of the reaction gas flow increases the contact probability between the reaction gas and the edge of the wafer 30, improves the surface epitaxial deposition quality of the edge of the wafer 30, and enables the surface epitaxial deposition quality of the edge of the wafer 30 to be consistent with that of other positions of the wafer 30, thereby improving the yield of the epitaxial process of the wafer 30.
In the deposition process, the reaction gas is introduced from the top of the vapor deposition apparatus and is blown to the central portion of the tray 10, and then the reaction gas flows from the central portion of the tray 10 to the periphery. The reactant gas flows through the flow guiding surface 21 and then flows into the groove 20 and contacts the edge of the wafer 30 placed in the groove 20.
The invention is characterized in that the groove 20 is arranged on the tray body 10, the groove 20 is used for bearing the wafer 30, and the wafer 30 is placed in the groove 20 during epitaxial deposition, so that the wafer 30 is prevented from sliding freely in the tray body. During epitaxial deposition, the distribution of the reaction gas influences the quality and uniformity of epitaxial deposition, and by arranging the inclined guide surface, the flow direction of the reaction gas flow can be changed, so that the reaction gas is uniformly distributed on the surface of the wafer 30, and the uniformity of the deposition of the reaction gas on the surface of the wafer 30 is ensured.
In the above embodiment, the wafer 30 is directly disposed in the groove 20, and in other embodiments, the bottom of the groove is further provided with a step 40, as shown in fig. 9, and the wafer 30 is disposed on the step 40 at the bottom of the groove, so that direct contact heating of the substrate is changed into radiation heating, so that the temperature on the wafer is uniform, and the quality of the epitaxial layer formed on the wafer is improved.
Finally, it should be noted that: the above embodiments are only for illustrating the technical solution of the present invention, and not for limiting the same; although the invention has been described in detail with reference to the foregoing embodiments, it will be understood by those of ordinary skill in the art that: the technical scheme described in the foregoing embodiments can be modified or some or all of the technical features thereof can be replaced by equivalents; such modifications and substitutions do not depart from the spirit of the invention.
Claims (7)
1. A wafer carrier tray, comprising:
a tray body;
the groove is used for placing the wafer and is arranged on the tray body;
the flow guide surface is arranged on the side wall of the tray body, is arranged at the position of the reaction gas inlet, is obliquely arranged relative to the wafer placed in the groove, and extends from the upper surface of the tray body to the bottom direction of the groove;
the height H of the flow guiding surface is more than H 1 -H 2 The height H of the flow guiding surface is less than or equal to H 1 Such that the bottom edge of the guide surface is lower than the upper surface of the wafer; wherein H is 1 For the depth of the groove H 2 Is the thickness of the wafer;
the central angle corresponding to the arc length of the diversion surface along the circumferential direction of the groove is not more than 180 degrees;
the reaction gas flows from the central part of the tray body to the periphery, the reaction gas flows into the grooves in a concentrated mode, and the position of the reaction gas inlet is the corresponding position of the reaction gas flowing into the grooves in a concentrated mode.
2. The wafer carrier tray of claim 1, wherein sidewalls of the grooves are perpendicular to a bottom surface of the grooves.
3. The wafer carrier of claim 1, wherein the flow-directing surface has a central angle corresponding to an arc length along the circumference of the recess of no greater than 120 °.
4. The wafer carrier as claimed in claim 1, wherein the angle of inclination of the flow guiding surface is 10 ° -60 °.
5. The wafer carrier as claimed in claim 1, wherein the flow guiding surface is a planar, arcuate or stepped profile structure.
6. The wafer carrier as recited in claim 1, wherein the recess bottom is provided with a step.
7. Wafer epitaxy apparatus comprising a wafer carrier tray according to any one of claims 1 to 6.
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| PCT/CN2019/095459 WO2021003705A1 (en) | 2019-07-10 | 2019-07-10 | Wafer carrier and wafer epitaxial device |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| CN114097072A CN114097072A (en) | 2022-02-25 |
| CN114097072B true CN114097072B (en) | 2023-09-15 |
Family
ID=74114302
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201980098322.5A Active CN114097072B (en) | 2019-07-10 | 2019-07-10 | Wafer carrying disc and wafer epitaxial device |
Country Status (2)
| Country | Link |
|---|---|
| CN (1) | CN114097072B (en) |
| WO (1) | WO2021003705A1 (en) |
Families Citing this family (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN113699586B (en) * | 2021-08-27 | 2022-07-26 | 江苏第三代半导体研究院有限公司 | Tray with air bridge structure and epitaxial growth method |
| CN114171443A (en) * | 2021-11-25 | 2022-03-11 | 绍兴同芯成集成电路有限公司 | Groove type carrying disc and application thereof |
| CN114855148B (en) * | 2022-03-21 | 2023-05-16 | 华灿光电(苏州）有限公司 | Epitaxial tray for improving stability of reaction cavity flow field and use method |
| CN114855272A (en) * | 2022-04-28 | 2022-08-05 | 北京北方华创微电子装备有限公司 | Carrier and semiconductor processing equipment |
Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| KR20130077496A (en) * | 2011-12-29 | 2013-07-09 | 엘지이노텍 주식회사 | Apparatus and method for deposition |
| CN104756244A (en) * | 2012-10-16 | 2015-07-01 | Lg矽得荣株式会社 | Susceptor for epitaxial growing and method for epitaxial growing |
| CN109306471A (en) * | 2017-07-28 | 2019-02-05 | 汉民科技股份有限公司 | chemical vapor deposition system |
Family Cites Families (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP3911518B2 (en) * | 1995-03-31 | 2007-05-09 | 株式会社Ｓｕｍｃｏ | Susceptor for vapor phase growth apparatus and vapor phase growth method |
| US20020062792A1 (en) * | 1999-07-14 | 2002-05-30 | Seh America, Inc. | Wafer support device and reactor system for epitaxial layer growth |
| JP5604907B2 (en) * | 2010-02-25 | 2014-10-15 | 信越半導体株式会社 | Semiconductor substrate support susceptor for vapor phase growth, epitaxial wafer manufacturing apparatus, and epitaxial wafer manufacturing method |
| CN105097638A (en) * | 2015-08-24 | 2015-11-25 | 沈阳拓荆科技有限公司 | Novel in-cavity chamfer ceramic ring |
-
2019
- 2019-07-10 CN CN201980098322.5A patent/CN114097072B/en active Active
- 2019-07-10 WO PCT/CN2019/095459 patent/WO2021003705A1/en active Application Filing
Patent Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| KR20130077496A (en) * | 2011-12-29 | 2013-07-09 | 엘지이노텍 주식회사 | Apparatus and method for deposition |
| CN104756244A (en) * | 2012-10-16 | 2015-07-01 | Lg矽得荣株式会社 | Susceptor for epitaxial growing and method for epitaxial growing |
| CN109306471A (en) * | 2017-07-28 | 2019-02-05 | 汉民科技股份有限公司 | chemical vapor deposition system |
Also Published As
| Publication number | Publication date |
|---|---|
| WO2021003705A1 (en) | 2021-01-14 |
| CN114097072A (en) | 2022-02-25 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| CN114097072B (en) | Wafer carrying disc and wafer epitaxial device | |
| JP5156446B2 (en) | Susceptor for vapor phase growth equipment | |
| KR20230023702A (en) | Removable substrate tray and assembly and reactor including same | |
| CN114072900B (en) | Wafer carrying disc and wafer epitaxial device | |
| US6599367B1 (en) | Vacuum processing apparatus | |
| US7070660B2 (en) | Wafer holder with stiffening rib | |
| US20230002896A1 (en) | Reaction chamber | |
| JP2018518592A (en) | Heat shield ring for high growth rate EPI chamber | |
| US20220005728A1 (en) | Wafer susceptor and chemical vapor deposition apparatus | |
| CN111910177B (en) | Metal organic compound chemical vapor deposition reaction device | |
| KR101659560B1 (en) | Reactor of apparatus for processing substrate | |
| WO2009093417A1 (en) | Susceptor and vapor phase growth system and vapor phase growth method | |
| TWI813094B (en) | Methods to eliminate of deposition on wafer bevel and backside | |
| JP3603216B2 (en) | Thin film growth equipment | |
| CN215288964U (en) | Wafer tray and chemical vapor deposition equipment | |
| CN215628286U (en) | Graphite base and MOCVD equipment | |
| CN215517744U (en) | Sample holder for growing silicon carbide epitaxial wafer and device thereof | |
| US11594409B2 (en) | Systems and methods for depositing low-k dielectric films | |
| CN113373513B (en) | Susceptor and apparatus for manufacturing wafer including the same | |
| US20230290669A1 (en) | Semiconductor manufacturing apparatus | |
| US20220093371A1 (en) | Radiation shield for removing backside deposition at lift pin locations | |
| JP2018060929A (en) | Susceptor | |
| KR20150003118A (en) | Cluster-batch type system for processing substrate | |
| US20200083085A1 (en) | Susceptor and chemical vapor deposition apparatus | |
| CN115786873A (en) | Semiconductor manufacturing apparatus, chamber assembly, and method of growing group III nitride |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| PB01 | Publication | ||
| PB01 | Publication | ||
| SE01 | Entry into force of request for substantive examination | ||
| SE01 | Entry into force of request for substantive examination | ||
| GR01 | Patent grant | ||
| GR01 | Patent grant |