KR20130034862A - Ring cover and susceptor using the same - Google Patents

Ring cover and susceptor using the same Download PDF

Info

Publication number
KR20130034862A
KR20130034862A KR1020110098990A KR20110098990A KR20130034862A KR 20130034862 A KR20130034862 A KR 20130034862A KR 1020110098990 A KR1020110098990 A KR 1020110098990A KR 20110098990 A KR20110098990 A KR 20110098990A KR 20130034862 A KR20130034862 A KR 20130034862A
Authority
KR
South Korea
Prior art keywords
ring cover
satellite
cover
susceptor
ring
Prior art date
Application number
KR1020110098990A
Other languages
Korean (ko)
Inventor
이형윤
정창구
Original Assignee
일진다이아몬드(주)
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by 일진다이아몬드(주) filed Critical 일진다이아몬드(주)
Priority to KR1020110098990A priority Critical patent/KR20130034862A/en
Publication of KR20130034862A publication Critical patent/KR20130034862A/en

Links

Images

Classifications

    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/683Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
    • H01L21/687Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches
    • H01L21/68714Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support
    • H01L21/68764Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support characterised by a movable susceptor, stage or support, others than those only rotating on their own vertical axis, e.g. susceptors on a rotating caroussel
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/683Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
    • H01L21/687Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches
    • H01L21/68714Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support
    • H01L21/68785Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support characterised by the mechanical construction of the susceptor, stage or support

Abstract

PURPOSE: A ring cover and a susceptor using the same are provided to improve the temperature uniformity of a wafer mounted on a satellite by forming the ring cover, an inner cover member, and an outer cover member with the same materials. CONSTITUTION: A satellite(100) is located on a mounting part of a main disc(200). An inner cover member(330) and an outer cover member(310) cover the upper side of the main disc. A ring cover(400) covers the upper side of the outer part of the satellite. An outer protrusion(410) which downwardly protrudes is formed on the outer side of the ring cover. An inner protrusion is inserted into the inside of the outer part of the satellite.

Description

Ring cover and susceptor using the same}

The present invention relates to a ring cover and a susceptor using the same, and more particularly, to a ring cover attached to a rotating satellite mounted on the main disk and a susceptor using the same.

In general, a susceptor that includes a rotatable satellite on the main disk places the wafer on top of the satellite so that the wafer rotates simultaneously with the satellite. As shown in FIG. 1, the susceptor is provided with a mounting part 300 on the main disk 200. Each mounting portion 300 is placed on the satellite (100). The gas flow passage 31 is rotatably formed in the mounting portion 300, and a gas hole is formed at one side of the gas flow passage 31 so that the gas passing through the gas hole flows along the gas flow passage 31 to support the support 32. Support and rotate the satellite supported by.

2 is a susceptor according to the related art, in which a spot facing portion for supporting a wafer is formed at the center, and an outer peripheral portion 11 protruding upward from the outside is formed at the outside of the spot facing portion. The outer circumferential portion 11 prevents the wafer from being separated when the satellite 10 rotates. Areas other than the area where the satellite 10 is mounted cover the upper surface of the main disk 20 with one inner cover member 33 and a plurality of outer cover members 31. The inner cover member 33 and the outer cover member 31 cover the upper surface of the main disk 20 to minimize the effect of foreign matter on the epitaxial growth layer.

However, the susceptor according to the related art has a problem in that the top surface of the outer peripheral portion 11 of the satellite 10 is exposed to a high temperature CVD process, causing white tae phenomenon to contaminate the epitaxial growth layer.

US4860687

The present invention has been made to solve the above-described problems of the prior art, to provide a ring cover and a susceptor using the same to prevent contamination of the epitaxial growth layer so that the upper surface of the outer peripheral portion of the satellite is not exposed to the outside thereof. The purpose.

The present invention for achieving the above object is a ring cover mounted on the main disk to rotate, and is mounted to cover the upper surface of the outer peripheral portion of the satellite having an outer peripheral portion projecting from the spot facing portion supporting the wafer.

In addition, the susceptor using the ring cover and the main disk; A satellite mounted on the main disk and rotating, the satellite having an outer circumference projecting from a spot facing portion supporting the wafer; And a ring cover mounted to cover an upper surface of the outer circumferential portion of the satellite.

In addition, the cover member is divided into a plurality formed to cover the area excluding the satellite, the cover member and the height is characterized in that the same height as the height of the ring cover.

In addition, the ring cover is formed with an outer locking projection protruding downward from the outside of the ring cover.

In addition, the ring cover is formed with an inner locking projection protruding downward from the inside of the ring cover.

In addition, the projection formed on the outer peripheral portion or the ring cover of the satellite; And a projection groove on the outer circumferential portion of the satellite or the ring cover to accommodate the projection.

In addition, the ring cover is made of quality.

In addition, the ring cover is formed of a graphite body and a SiC coating layer coated on the surface of the body.

In addition, the ring cover is formed of a SiC sintered body.

According to the present invention, the upper surface of the outer peripheral portion of the satellite is not exposed to the outside, thereby preventing contamination of the epitaxial layer, and the temperature uniformity of the wafer mounted on the satellite is improved.

1 is a perspective view of a susceptor mounting portion according to the prior art.
2 is a top view of a susceptor according to the prior art.
3 is a ring cover and a susceptor using the same according to the first embodiment of the present invention.
Figure 4 is a ring cover and a susceptor using the same according to a second embodiment of the present invention.
Figure 5 is a ring cover and a susceptor using the same according to a third embodiment of the present invention.
Figure 6 is a ring cover and a susceptor using the same according to a fourth embodiment of the present invention.

Hereinafter, preferred embodiments of the present invention will be described in detail with reference to the accompanying drawings. Prior to this, terms and words used in the present specification and claims should not be construed as limited to ordinary or dictionary terms, and the inventor should appropriately interpret the concepts of the terms appropriately The present invention should be construed in accordance with the meaning and concept consistent with the technical idea of the present invention.

Therefore, the embodiments described in this specification and the configurations shown in the drawings are merely the most preferred embodiments of the present invention and do not represent all the technical ideas of the present invention. Therefore, It is to be understood that equivalents and modifications are possible.

In the description of the preferred embodiment of the present invention, the same components as those of the prior art will be described with the same reference numerals.

Referring to FIG. 3, the satellite 100 is located at a mounting portion of the main disk 200. The inner cover member 330 and the outer cover member 310 cover the upper surface of the main disk 200 to the outside of the satellite 100. A spot facing portion for supporting a wafer (not shown) is formed in the center of the satellite 100, and an outer circumferential portion 110 protruding upward from the outside thereof is formed outside the spot facing portion.

The ring cover 400 has a circular band shape as a whole and is coupled to the outer circumferential portion 110 of the satellite 100 to cover the upper surface 111 of the outer circumferential portion 110 of the satellite 100.

A plurality of cover members 310 and 330 are formed to cover an area excluding the satellite 100. The cover members 310 and 330 and the ring cover 400 are formed at the same height to form an epitaxial growth layer on the wafer. Do not disturb the gas flow when forming. That is, the height from the main disk 200 to the top end of the cover members 310 and 330 and the height from the main disk 200 to the outer circumferential surface of the satellite 100 and the top end of the ring cover 400 are the same. The gas flowing to the upper portion of the 330 reaches the spot facing unit 150 without forming turbulent flow.

The cover members 310 and 330 may be made of quality, but is not limited thereto.

The outer locking jaw 410 protruding downward is formed on the outer side of the ring cover 400. The ring cover 400 is firmly fixed to the satellite 100 by allowing the outer locking jaw 410 to surround the outer circumferential portion 110 of the satellite 100.

In addition, referring to FIG. 4, unlike FIG. 3, an inner locking jaw 430 protruding downward is formed inside the ring cover 400. The inner locking jaw 430 is inserted into the outer circumferential portion 110 of the satellite 100 so that the ring cover 400 is firmly fixed to the satellite 100.

In addition, referring to Figure 5, the inner and outer locking jaw 430 and the outer locking jaw 410 is formed in and out of the ring cover 400 is the ring cover 400 is firmly fixed to the satellite 100 .

As a result, the upper surface of the outer circumference 110 of the satellite 100 is prevented from being exposed to the outside, thereby preventing the satellite 100 from being contaminated, and by periodically replacing the ring cover 400 to the outer circumference 110. Particle problems can be solved.

Referring to FIG. 6, a protrusion 113 is formed on the outer circumferential portion 110 of the satellite 100, and a protrusion in which the protrusion 113 is accommodated at a position of the ring cover 400 corresponding to the protrusion 113. Grooves 413 are formed. Due to such a structure, even when the satellite 100 rotates, the ring cover 400 maintains the coupling position without departing from the satellite 100.

The ring cover 400 may be made of quality. The temperature uniformity of the wafer mounted on the satellite 100 is improved by using the same material as the ring cover 400 and the inner and outer cover members 310 and 330.

The ring cover 400 may be formed of a SiC coating layer coated on the body of the graphite material and the surface of the body. The material of the body of the ring cover 400 is the same as the materials of the satellite 100 and the main disk 200 to improve the temperature uniformity of the wafer mounted on the satellite 100.

The ring cover 400 may be formed of SiC sintered body. The ring cover 400 is formed of SiC sintered body to improve the temperature uniformity of the wafer mounted on the satellite 100.

100: satellite 110: outer peripheral part
111: upper peripheral portion 113: protrusion
413: protrusion groove 200: main disk
310: outer cover member 330: inner cover member
400: ring cover 410: outer locking jaw
430: inner locking jaw

Claims (9)

A ring cover mounted on the main disk to rotate to cover the upper surface of the outer peripheral portion of the satellite having an outer peripheral portion projecting from the spot facing portion supporting the wafer.
Main disk;
A satellite mounted on the main disk and rotating, the satellite having an outer circumference projecting from a spot facing portion supporting the wafer;
A susceptor comprising a ring cover mounted to cover an upper surface of the outer circumference of the satellite;
The method of claim 2,
And a plurality of divided cover members formed to cover an area excluding the satellite, wherein the cover member and the height are the same height as the height of the ring cover.
The method of claim 2,
The ring cover is a susceptor, characterized in that the outer locking projection is formed to protrude downward from the outside of the ring cover.
The method of claim 2,
The ring cover is a susceptor, characterized in that the inner locking projection is formed to protrude downward from the inside of the ring cover.
The method of claim 2,
A protrusion formed on an outer circumferential portion of the satellite or the ring cover;
A susceptor comprising a protrusion groove in which the protrusion is received corresponding to the protrusion on an outer circumferential portion of the satellite or the ring cover;
7. The method according to any one of claims 2 to 6,
Susceptor, characterized in that the ring cover is made of quality.
7. The method according to any one of claims 2 to 6,
The ring cover is a susceptor, characterized in that formed of a graphite body and a SiC coating layer coated on the surface of the body.
7. The method according to any one of claims 2 to 6,
The ring cover is a susceptor, characterized in that formed of SiC sintered body.





KR1020110098990A 2011-09-29 2011-09-29 Ring cover and susceptor using the same KR20130034862A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
KR1020110098990A KR20130034862A (en) 2011-09-29 2011-09-29 Ring cover and susceptor using the same

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
KR1020110098990A KR20130034862A (en) 2011-09-29 2011-09-29 Ring cover and susceptor using the same

Publications (1)

Publication Number Publication Date
KR20130034862A true KR20130034862A (en) 2013-04-08

Family

ID=48436853

Family Applications (1)

Application Number Title Priority Date Filing Date
KR1020110098990A KR20130034862A (en) 2011-09-29 2011-09-29 Ring cover and susceptor using the same

Country Status (1)

Country Link
KR (1) KR20130034862A (en)

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR20160012918A (en) * 2014-07-24 2016-02-03 가부시키가이샤 뉴플레어 테크놀로지 Film forming apparatus, susceptor and film forming method
WO2020139030A1 (en) * 2018-12-28 2020-07-02 주식회사 테스 Susceptor assembly, mocvd apparatus comprising same, and control method for withdrawing upper susceptor from mocvd apparatus
KR20220006950A (en) * 2020-07-09 2022-01-18 주식회사 한화 A substrate processing apparatus including a protection portion

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR20160012918A (en) * 2014-07-24 2016-02-03 가부시키가이샤 뉴플레어 테크놀로지 Film forming apparatus, susceptor and film forming method
WO2020139030A1 (en) * 2018-12-28 2020-07-02 주식회사 테스 Susceptor assembly, mocvd apparatus comprising same, and control method for withdrawing upper susceptor from mocvd apparatus
KR20220006950A (en) * 2020-07-09 2022-01-18 주식회사 한화 A substrate processing apparatus including a protection portion

Similar Documents

Publication Publication Date Title
US10072354B2 (en) Lower side wall for epitaxial growth apparatus
KR101354106B1 (en) Cvd reactor with a gas inlet member
EP2913844B1 (en) Epitaxial growth apparatus
CN105765113A (en) Epitaxial wafer growth apparatus
TW201611168A (en) Susceptor and pre-heat ring for thermal processing of substrates
TWI584405B (en) Wafer tray
KR20130037688A (en) Wafer carrier with thermal features
KR20120118416A (en) Method and apparatus for depositing a material layer originating from process gas on a substrate wafer
TW201700774A (en) Chamber components for epitaxial growth apparatus
TWI593042B (en) The substrate carrier can be placed on the substrate carrier heat treatment device
KR20130007594A (en) Wafer carrier with sloped edge
JP7307100B2 (en) CVD reactor with carrier ring for substrate handling and use of carrier ring in CVD reactor
JP7008509B2 (en) Heat shield ring for high growth rate EPI chambers
KR20130111029A (en) Susceptor for chemical vapor deposition apparatus and chemical vapor deposition apparatus having the same
KR20130034862A (en) Ring cover and susceptor using the same
JP2015032630A (en) Manufacturing apparatus and manufacturing method of epitaxial wafer
JP2018082100A (en) Mounting plate, wafer support table, and chemical vapor deposition apparatus
CN113950543A (en) Thermal isolation assembly for epitaxial chamber
US10460965B2 (en) Susceptor
JP6986872B2 (en) Wafer support, chemical vapor deposition equipment, and method for manufacturing SiC epitaxial wafers
JP6372310B2 (en) Susceptor used in chemical vapor deposition apparatus and chemical vapor deposition apparatus having the same
JP2010034337A (en) Susceptor for vapor deposition equipment
KR101425534B1 (en) Porous chuck having multiple porous plate
KR101393029B1 (en) Porous chuck having variable vacuum path
KR101505184B1 (en) Deposition Film Forming Apparatus Including Rotating Members

Legal Events

Date Code Title Description
A201 Request for examination
E902 Notification of reason for refusal
E90F Notification of reason for final refusal
E601 Decision to refuse application