CN216671607U - Power field effect transistor (Mosfet) double-sided cooling application structure - Google Patents

Abstract

The utility model discloses a double-sided cooling application structure of a power field effect transistor, which comprises the following components: the PCB is provided with a through hole, the through hole corresponds to the metal radiating substrate of the power field effect tube, and the first heat-conducting interface material extends into the through hole; on the one hand, the double-sided cooling structure is adopted, the heat dissipation effect is greatly improved, meanwhile, the problem of uneven heat dissipation is effectively avoided, the problem of heat dissipation conduction can be solved by opening a via hole on a PCB, the power field effect transistor can be well ensured not to deform, the service life is long, on the other hand, heat conducting glue is adopted for filling joints and filling and sealing, the heat transfer channel between the transistor and a radiator is greatly widened, the heat dissipation efficiency is improved, and the power tube is prevented from being damaged.

Description

A power field effect transistor (Mosfet) double-sided cooling application structure

technical field

The utility model belongs to the technical field of heat dissipation, in particular to a double-sided cooling application structure of a power field effect transistor (Mosfet).

Background technique

With the vigorous development of new energy vehicle technology, there is a broad space for the manufacture and application of power system power devices, especially power field effect transistors, which are often used in new energy vehicle powertrain systems, and are used in mechanical equipment, industrial Control, robotics and other fields are widely used. The current power field effect transistor will generate a lot of heat during use, which will cause the temperature to rise too fast and cause a short service life. Therefore, how to solve this problem has become a topic that researchers have been studying.

There are still many problems in the current cooling structure of power field effect transistors. For example, most of the current cooling application structures have the problem of insufficient cooling capacity, slow heat dissipation, and uneven heat dissipation. It is prone to failure, or the service life is shortened, and in severe cases, power devices and even products may be damaged and burned. At the same time, most of the current cooling structures have the problem of poor thermal conductivity. Because conventional heat sinks cannot perfectly fit the power field effect transistors, the heat transfer efficiency is low and the heat dissipation is affected. Therefore, the present application makes innovations and improvements to the cooling structure of the power field effect transistor in view of the above problems.

The current cooling structure mainly has the following problems:

1. Most of the current cooling structures have the problem of insufficient cooling capacity, slow heat dissipation, uneven heat dissipation, power field effect transistors are prone to functional failure, performance degradation, and shortened lifespan, and it is also possible to cause damage to power devices and even products due to heat dissipation. burn.

2. Most of the current water-cooling structures have the problem of poor thermal conductivity. Because the conventional radiator cannot fit the transistor perfectly, the heat transfer efficiency cannot be improved, and the heat dissipation area is uneven, which affects heat dissipation.

SUMMARY OF THE INVENTION

Purpose of the invention: In order to overcome the above deficiencies, the purpose of this utility model is to provide a power field effect transistor (Mosfet) double-sided cooling application structure, on the one hand, the double-sided cooling structure is adopted to greatly improve the heat dissipation effect, and at the same time effectively avoid uneven heat dissipation. The problem is that opening a via hole on the PCB can not only solve the problem of heat dissipation and conduction, but also ensure that the power field effect transistor is not deformed and has a long service life. The heat transfer path between the devices improves the heat dissipation efficiency and avoids the damage of the power tube.

Technical scheme: In order to achieve the above purpose, the utility model provides a double-sided cooling application structure of a power field effect transistor, including: a first radiator, a first heat conduction interface material, a PCB board, a power field effect transistor metal heat dissipation substrate, a power field effect transistor A field effect transistor, a second thermal interface material and a second heat sink, the PCB board is provided with via holes, the via holes are provided with a plurality of via holes, the PCB board is provided with a power field effect transistor, and the power field The bottom of the effect tube is provided with a power field effect tube metal heat dissipation substrate, and the power field effect tube metal heat dissipation substrate contacts the PCB board; the top of the power field effect tube is covered with a second heat conduction interface material, and the second heat conduction interface material A second heat sink is arranged on the top; a first thermal interface material is arranged at the bottom of the PCB board, the first thermal interface material extends into the via hole, and a first radiator is arranged at the bottom of the first thermal interface material .

The arrangement of the cooling structure in the utility model adopts the double-sided cooling structure, which greatly improves the heat dissipation effect, and at the same time avoids the problem of uneven heat dissipation, the power device is not easily deformed, and the reliability of the product is improved, thereby improving the use of the product. life.

The via hole described in the present invention corresponds to the metal heat dissipation substrate of the power field effect transistor, and the first heat conducting interface material fills the via hole.

The first heat-conducting interface material described in the present invention covers the top of the first heat sink, and the first heat-conducting interface material fills the space at the top of the first heat sink by using a caulking method.

The second heat-conducting interface material described in the present invention is extended to the second radiator by potting method for potting.

The first thermally conductive interface material in the present invention adopts thermally conductive adhesive, and the second thermally conductive interface material also adopts thermally conductive adhesive.

The heat-conducting interface material in the utility model is arranged by using heat-conducting glue for filling and potting, which greatly widens the heat transfer path between the power field effect transistor and the radiator and improves the heat-dissipation efficiency. , and the surrounding structure is used to support and protect the power field effect transistor, and this structure can effectively avoid the damage of the power field effect transistor mechanically.

The first radiator in the present invention can be an air-cooled radiator, and the first radiator can be embedded in a water pipe to become a water-cooled radiator.

The first radiator described in the present invention is provided with a first water cooling pipe.

The arrangement of the first heat sink in the present invention compresses the space around the PCB board below the power field effect transistor by the first heat conduction interface material, increases the pressure around the power field effect transistor, and ensures the power field effect transistor and the first heat conduction interface material contact.

For the arrangement of the first radiator in the present invention, when the heat dissipation power requirement is not high, the heat dissipation fin feature is used, and air cooling is used for heat dissipation. When the heat dissipation power requirement is high, a water tank is directly opened at the bottom of the first radiator or placed Containerized cooling water pipe, using water cooling to dissipate heat.

The second radiator in the present invention can be an aluminum alloy sheet metal part, or can be a die-casting aluminum alloy part and an aluminum alloy profile radiator.

The second radiator described in the present invention is provided with a second water cooling pipe.

As can be seen from the above technical solutions, the present invention has the following beneficial effects:

1. The double-sided cooling application structure of a power field effect transistor (Mosfet) described in the present utility model adopts a double-sided cooling structure, greatly improving the heat dissipation effect, avoiding the problem of uneven heat dissipation, and the power device is not easily deformed, long lasting.

2. The double-sided cooling application structure of a power field effect transistor (Mosfet) described in this utility model adopts thermal conductive glue to fill the gap and potting, which greatly widens the heat transfer path between the transistor and the radiator, and improves the heat dissipation efficiency. At the same time, due to the protection of glue, the probability of damage to the power field effect transistor during use is effectively avoided.

Description of drawings

Fig. 1 is the overall structure schematic diagram of the present utility model;

2 is a schematic structural diagram of a via hole of the present invention;

3 is a schematic cross-sectional view of the single-sided heat dissipation structure of the present invention;

4 is a schematic cross-sectional view of the double-sided heat dissipation structure of the present invention;

Fig. 5 is the structural representation of the water cooling pipe of the present utility model;

6 is a schematic cross-sectional view of the water-cooled heat dissipation structure of the present invention;

In the figure: the first radiator-1, the first water cooling tube-11, the first thermal interface material-2, the PCB board-3, the power field effect tube metal heat dissipation substrate-4, the power field effect tube-5, the second heat conduction Interface material-6, second radiator-7, second water cooling tube-71.

Detailed ways

The present utility model will be further illustrated below in conjunction with the accompanying drawings and specific embodiments.

The following describes in detail the embodiments of the present invention, examples of which are illustrated in the accompanying drawings, wherein the same or similar reference numerals refer to the same or similar elements or elements having the same or similar functions throughout. The embodiments described below with reference to the accompanying drawings are exemplary, and are intended to be used to explain the present invention, but should not be construed as a limitation of the present invention.

In the description of the present invention, it should be understood that the terms "center", "longitudinal", "lateral", "length", "width", "thickness", "upper", "lower", "front", The orientation or positional relationship indicated by "rear", "left", "right", "vertical", "horizontal", "top", "bottom", "inside", "clockwise", "counterclockwise", etc. is based on The orientation or positional relationship shown in the accompanying drawings is only for the convenience of describing the present invention and simplifying the description, rather than indicating or implying that the referred device or element must have a specific orientation, be constructed and operated in a specific orientation, and therefore cannot be understood To limit the utility model.

In addition, the terms "first" and "second" are only used for descriptive purposes, and should not be construed as indicating or implying relative importance or implying the number of indicated technical features. Thus, a feature defined as "first" or "second" may expressly or implicitly include one or more of that feature. In the description of the present invention, unless otherwise specified, the meaning of "plurality" is two or more, unless otherwise clearly defined.

In the present utility model, unless otherwise expressly specified and limited, the terms "installation", "connection", "connection", "fixed" and other terms should be understood in a broad sense, for example, it may be a fixed connection or a detachable connection Connection, or integral connection; can be mechanical connection, can also be electrical connection; can be directly connected, can also be indirectly connected through an intermediate medium, can be internal communication between two elements. For those of ordinary skill in the art, the specific meanings of the above terms in the present invention can be understood according to specific situations.

In the present invention, unless otherwise expressly specified and limited, a first feature "on" or "under" a second feature may include the first and second features in direct contact, or may include the first and second features The features are not in direct contact but through additional features between them. Also, the first feature being "above", "over" and "above" the second feature includes the first feature being directly above and obliquely above the second feature, or simply means that the first feature is level higher than the second feature. The first feature is "below", "below" and "below" the second feature includes the first feature being directly below and diagonally below the second feature, or simply means that the first feature has a lower level than the second feature.

Example 1

As shown in Figure 1-6, a double-sided cooling application structure of a power field effect transistor Mosfet includes: a first heat sink 1, a first thermal interface material 2, a PCB board 3, a power field effect transistor metal heat dissipation substrate 4, a power The field effect transistor 5, the second thermal interface material 6 and the second heat sink 7, the PCB board 3 is provided with via holes, the via holes are provided with a plurality of, and the PCB board 3 is provided with power field effect transistors 5. The power field effect tube 5 is provided with a power field effect tube metal heat dissipation substrate 4 at the bottom, and the power field effect tube metal heat dissipation base plate 4 contacts the PCB board 3; the top of the power field effect tube 5 is covered with a second A thermally conductive interface material 6, the top of the second thermally conductive interface material 6 is provided with a second heat sink 7; the bottom of the PCB board 3 is provided with a first thermally conductive interface material 2, the first thermally conductive interface material 2 extends to the Inside the hole, a first heat sink 1 is disposed at the bottom of the first thermal interface material 2 .

The via holes in this embodiment correspond to the metal heat dissipation substrate 4 of the power field effect transistor, and the first thermal interface material 2 fills the via holes.

The first thermal interface material 2 described in this embodiment covers the top of the first heat sink 1 , and the first thermal interface material 2 fills the top space of the first heat sink 1 by using a gap filling method.

The second thermal interface material 6 described in this embodiment is extended to the second heat sink 7 by a potting method for potting.

The first thermally conductive interface material 2 in this embodiment uses thermally conductive adhesive, and the second thermally conductive interface material 6 also uses thermally conductive adhesive.

The first radiator 1 of the radiator in this embodiment may be an air-cooled radiator, and the first radiator 1 may be embedded in a water pipe to become a water-cooled radiator.

The first radiator 1 described in this embodiment is provided with a first water cooling pipe 11 .

The second radiator 7 described in this embodiment may be an aluminum alloy sheet metal part, or may be a die-casting aluminum alloy part and an aluminum alloy profile radiator.

The second radiator 7 described in this embodiment is provided with a second water cooling pipe 71 .

Example 2

As shown in Figures 1 and 2, a power field effect transistor Mosfet double-sided cooling application structure includes: a first heat sink 1, a first thermal interface material 2, a PCB board 3, a power field effect transistor metal heat dissipation substrate 4, a power The field effect transistor 5, the second thermal interface material 6 and the second heat sink 7, the PCB board 3 is provided with via holes, the via holes are provided with a plurality of, and the PCB board 3 is provided with power field effect transistors 5. The power field effect tube 5 is provided with a power field effect tube metal heat dissipation substrate 4 at the bottom, and the power field effect tube metal heat dissipation base plate 4 contacts the PCB board 3; the top of the power field effect tube 5 is covered with a second A thermally conductive interface material 6, the top of the second thermally conductive interface material 6 is provided with a second heat sink 7; the bottom of the PCB board 3 is provided with a first thermally conductive interface material 2, the first thermally conductive interface material 2 extends to the Inside the hole, a first heat sink 1 is disposed at the bottom of the first thermal interface material 2 .

The via holes in this embodiment correspond to the metal heat dissipation substrate 4 of the power field effect transistor, and the first thermal interface material 2 fills the via holes.

The first thermal interface material 2 described in this embodiment covers the top of the first heat sink 1 , and the first thermal interface material 2 fills the top space of the first heat sink 1 by using a gap filling method.

The second thermal interface material 6 described in this embodiment is extended to the second heat sink 7 by a potting method for potting.

The first thermally conductive interface material 2 in this embodiment uses thermally conductive adhesive, and the second thermally conductive interface material 6 also uses thermally conductive adhesive.

Example 3

As shown in Figures 1 and 4, a double-sided cooling application structure of a power field effect transistor Mosfet includes: a first heat sink 1, a first thermal interface material 2, a PCB board 3, a power field effect transistor metal heat dissipation substrate 4, a power The field effect transistor 5, the second thermal interface material 6 and the second heat sink 7, the PCB board 3 is provided with via holes, the via holes are provided with a plurality of, and the PCB board 3 is provided with power field effect transistors 5. The power field effect tube 5 is provided with a power field effect tube metal heat dissipation substrate 4 at the bottom, and the power field effect tube metal heat dissipation base plate 4 contacts the PCB board 3; the top of the power field effect tube 5 is covered with a second A thermally conductive interface material 6, the top of the second thermally conductive interface material 6 is provided with a second heat sink 7; the bottom of the PCB board 3 is provided with a first thermally conductive interface material 2, the first thermally conductive interface material 2 extends to the Inside the hole, a first heat sink 1 is disposed at the bottom of the first thermal interface material 2 .

The second radiator 7 described in this embodiment is an aluminum alloy profile radiator.

Example 4

As shown in Figures 1, 5 and 6, a double-sided cooling application structure of a power field effect transistor Mosfet includes: a first heat sink 1, a first thermal interface material 2, a PCB board 3, and a power field effect transistor metal heat dissipation substrate 4 , a power field effect transistor 5, a second thermal interface material 6 and a second heat sink 7, the PCB board 3 is provided with via holes, the via holes are provided with a plurality of, and the PCB board 3 is provided with a power field Effect tube 5, the bottom of the power field effect tube 5 is provided with a power field effect tube metal heat dissipation substrate 4, and the power field effect tube metal heat dissipation substrate 4 contacts the PCB board 3; the top of the power field effect tube 5 is covered with a The second thermal interface material 6, the top of the second thermal interface material 6 is provided with a second heat sink 7; the bottom of the PCB board 3 is provided with a first thermal interface material 2, the first thermal interface material 2 extends to all In the via hole, a first heat sink 1 is disposed at the bottom of the first thermal interface material 2 .

The first radiator 1 of the radiator described in this embodiment is a water-cooled radiator.

The first radiator 1 described in this embodiment is provided with a first water cooling pipe 11 .

The second radiator 7 described in this embodiment is provided with a second water cooling pipe 71 .

The above are only the preferred embodiments of the present invention. It should be pointed out that for those skilled in the art, some improvements can be made without departing from the principles of the present invention, and these improvements should also be considered as This is the scope of protection of the utility model.

Claims (9)

1. A power field effect transistor (Mosfet) double-sided cooling application structure is characterized in that: the method comprises the following steps: the heat dissipation device comprises a first radiator (1), a first heat conduction interface material (2), a PCB (printed circuit board) plate (3), a power field effect tube metal heat dissipation substrate (4), a plurality of power field effect tubes (5), a second heat conduction interface material (6) and a second radiator (7), wherein through holes are formed in the PCB plate (3), the power field effect tubes (5) are arranged on the PCB plate (3), the power field effect tube metal heat dissipation substrate (4) is arranged at the bottom of the power field effect tube (5), and the power field effect tube metal heat dissipation substrate (4) is in contact with the PCB plate (3); a second heat conduction interface material (6) is coated on the top of the power field effect transistor (5), and a second radiator (7) is arranged on the top of the second heat conduction interface material (6); the PCB is characterized in that a first heat conduction interface material (2) is arranged at the bottom of the PCB (3), the first heat conduction interface material (2) extends into the through hole, and a first radiator (1) is arranged at the bottom of the first heat conduction interface material (2).

2. A power field effect transistor (Mosfet) dual sided cooling application structure in accordance with claim 1, wherein: the through hole corresponds to the power field effect transistor metal heat dissipation substrate (4), and the first heat conduction interface material (2) fills the through hole.

3. A power field effect transistor (Mosfet) dual sided cooling application structure in accordance with claim 1, wherein: the first heat conduction interface material (2) covers the top of the first radiator (1), and the first heat conduction interface material (2) fills the top space of the first radiator (1) by adopting a gap filling method.

4. A power field effect transistor (Mosfet) dual sided cooling application structure in accordance with claim 1, wherein: the second heat-conducting interface material (6) extends to the second radiator (7) for encapsulation by an encapsulation method.

5. A power field effect transistor (Mosfet) dual sided cooling application structure in accordance with claim 1, wherein: the first heat-conducting interface material (2) is made of heat-conducting glue, and the second heat-conducting interface material (6) is also made of heat-conducting glue.

6. A power field effect transistor (Mosfet) dual sided cooling application structure in accordance with claim 1, wherein: the first radiator (1) is one of an air-cooled radiator or a water-cooled radiator embedded in a water pipe.

7. A power field effect transistor (Mosfet) dual sided cooling application structure in accordance with claim 6, wherein: a first water-cooling pipe (11) is arranged in the first radiator (1).

8. A power field effect transistor (Mosfet) dual sided cooling application structure in accordance with claim 1, wherein: the second radiator (7) is one of an aluminum alloy sheet metal part or a die-casting aluminum alloy part and an aluminum alloy profile.

9. A power field effect transistor (Mosfet) dual sided cooling application structure in accordance with claim 8, wherein: and a second water-cooling pipe (71) is arranged in the second radiator (7).

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