CN216671607U - Power field effect transistor (Mosfet) double-sided cooling application structure - Google Patents
Power field effect transistor (Mosfet) double-sided cooling application structure Download PDFInfo
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- CN216671607U CN216671607U CN202123293495.6U CN202123293495U CN216671607U CN 216671607 U CN216671607 U CN 216671607U CN 202123293495 U CN202123293495 U CN 202123293495U CN 216671607 U CN216671607 U CN 216671607U
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Abstract
The utility model discloses a double-sided cooling application structure of a power field effect transistor, which comprises the following components: the PCB is provided with a through hole, the through hole corresponds to the metal radiating substrate of the power field effect tube, and the first heat-conducting interface material extends into the through hole; on the one hand, the double-sided cooling structure is adopted, the heat dissipation effect is greatly improved, meanwhile, the problem of uneven heat dissipation is effectively avoided, the problem of heat dissipation conduction can be solved by opening a via hole on a PCB, the power field effect transistor can be well ensured not to deform, the service life is long, on the other hand, heat conducting glue is adopted for filling joints and filling and sealing, the heat transfer channel between the transistor and a radiator is greatly widened, the heat dissipation efficiency is improved, and the power tube is prevented from being damaged.
Description
Technical Field
The utility model belongs to the technical field of heat dissipation, and particularly relates to a double-sided cooling application structure of a power field effect transistor (Mosfet).
Background
With the rapid development of new energy automobile technology, the manufacture and application of power devices of power systems have wide space, and especially power field effect transistors are often applied to power assembly systems of new energy automobiles and widely used in the fields of mechanical equipment, industrial control, robots and the like. In the use process of the existing power field effect transistor, a large amount of heat is generated, so that the temperature is increased too fast and too high, and further the service life is short, and therefore, how to solve the problem becomes a subject of continuous research of research and development personnel.
The existing power field effect transistor cooling structure still has many problems, for example, the existing cooling application structure mostly has the problem of insufficient cooling capacity, the heat dissipation is slow, the heat dissipation is uneven, the consequences caused thereby often make the function of the product carried by the transistor easy to lose efficacy, or the service life is shortened, and if serious, the power device and even the product may be damaged and burnt. Meanwhile, the existing cooling structure mostly has the problem of poor heat conductivity, and the conventional radiator cannot be perfectly attached to the power field effect transistor, so that the heat transfer efficiency is low, and the heat dissipation is influenced. Therefore, the present application provides innovations and improvements in power field effect transistor cooling structure with respect to the above problems.
The existing cooling structure mainly has the following problems:
1. most of the existing cooling structures have the problems of insufficient cooling capacity, slow heat dissipation and uneven heat dissipation, the power field effect transistor is easy to have functional failure, performance reduction and short service life, and the power devices and even products are possibly damaged and burnt due to heat dissipation.
2. The problem that the heat conductivity is poor exists mostly in present water-cooling structure, because the unable perfect laminating transistor of conventional radiator leads to heat transfer efficiency can't promote, and heat radiating area is inhomogeneous, influences the heat dissipation.
Disclosure of Invention
The purpose of the utility model is as follows: in order to overcome the defects, the utility model aims to provide a double-sided cooling application structure of a power field effect transistor (Mosfet), on one hand, the double-sided cooling structure is adopted, so that the heat dissipation effect is greatly improved, and meanwhile, the problem of uneven heat dissipation is effectively avoided.
The technical scheme is as follows: in order to achieve the above object, the present invention provides a double-sided cooling application structure of a power field effect transistor, comprising: the heat dissipation device comprises a first radiator, a first heat conduction interface material, a PCB (printed circuit board), a power field effect tube metal heat dissipation substrate, a power field effect tube, a second heat conduction interface material and a second radiator, wherein through holes are formed in the PCB, a plurality of through holes are formed in the PCB, the power field effect tube is arranged on the PCB, the power field effect tube metal heat dissipation substrate is arranged at the bottom of the power field effect tube, and the power field effect tube metal heat dissipation substrate is in contact with the PCB; the top of the power field effect transistor is coated with a second heat conduction interface material, and the top of the second heat conduction interface material is provided with a second radiator; the PCB comprises a PCB and is characterized in that a first heat conduction interface material is arranged at the bottom of the PCB and extends into the through hole, and a first radiator is arranged at the bottom of the first heat conduction interface material.
According to the utility model, the cooling structure is arranged, a double-sided cooling structure is adopted, the heat dissipation effect is greatly improved, the problem of uneven heat dissipation is avoided, the power device is not easy to deform, the reliability of the product is improved, and the service life of the product is further prolonged.
The through hole corresponds to the power field effect transistor metal heat dissipation substrate, and the first heat conduction interface material fills the through hole.
The first heat conduction interface material covers the top of the first radiator, and the first heat conduction interface material fills the space at the top of the first radiator by adopting a gap filling method.
The second heat-conducting interface material extends to the second radiator for encapsulation by an encapsulation method.
The first heat-conducting interface material is made of heat-conducting glue, and the second heat-conducting interface material is also made of heat-conducting glue.
The arrangement of the heat-conducting interface material in the utility model adopts heat-conducting glue for filling joints and encapsulation, so that a heat transfer passage between the power field effect transistor and the radiator is greatly widened, and the heat radiation efficiency is improved.
The first radiator can be an air-cooled radiator, and the first radiator can be embedded into a water pipe to form a water-cooled radiator.
A first water-cooling pipe is arranged in the first radiator.
The arrangement of the first radiator compresses the space of the first heat-conducting interface material around the PCB below the power field effect transistor, improves the pressure around the power field effect transistor, and ensures the contact between the power field effect transistor and the first heat-conducting interface material.
According to the utility model, the first radiator is arranged, when the requirement on the heat dissipation power is not high, the characteristic of the heat dissipation fin is used, air cooling heat dissipation is used, and when the requirement on the heat dissipation power is high, a water tank is directly arranged at the bottom of the first radiator or a holding type cooling water pipe is placed in the water tank, and water cooling heat dissipation is used.
The second radiator can be an aluminum alloy sheet metal part, and can also be a die-casting aluminum alloy part and an aluminum alloy section radiator.
A second water-cooling pipe is arranged in the second radiator.
The technical scheme shows that the utility model has the following beneficial effects:
1. according to the double-sided cooling application structure of the power field effect transistor (Mosfet), the double-sided cooling structure is adopted, the heat dissipation effect is greatly improved, the problem of uneven heat dissipation is avoided, the power device is not prone to deformation, and the service life is long.
2. According to the double-sided cooling application structure of the power field effect transistor (Mosfet), the heat conduction glue is used for filling joints and filling and sealing, so that the heat transfer path between the transistor and the radiator is greatly widened, the heat dissipation efficiency is improved, and meanwhile, due to the protection of the glue, the probability of damage of the power field effect transistor in the use process is effectively avoided.
Drawings
FIG. 1 is a schematic view of the overall structure of the present invention;
FIG. 2 is a schematic structural diagram of a via hole of the present invention;
FIG. 3 is a schematic cross-sectional view of a single-sided heat dissipation structure of the present invention;
FIG. 4 is a schematic cross-sectional view of a dual-sided heat dissipation structure of the present invention;
FIG. 5 is a schematic diagram of the structure of a water-cooled tube according to the present invention;
FIG. 6 is a schematic cross-sectional view of a water-cooling heat dissipation structure according to the present invention;
in the figure: the heat dissipation structure comprises a first radiator-1, a first water-cooling tube-11, a first heat conduction interface material-2, a PCB-3, a power field effect tube metal heat dissipation substrate-4, a power field effect tube-5, a second heat conduction interface material-6, a second radiator-7 and a second water-cooling tube-71.
Detailed Description
The utility model is further elucidated with reference to the drawings and the embodiments.
Reference will now be made in detail to embodiments of the present invention, examples of which are illustrated in the accompanying drawings, wherein like or similar reference numerals refer to the same or similar elements or elements having the same or similar function throughout. The embodiments described below with reference to the drawings are illustrative and intended to be illustrative of the utility model and are not to be construed as limiting the utility model.
In the description of the present invention, it is to be understood that the terms "center", "longitudinal", "lateral", "length", "width", "thickness", "upper", "lower", "front", "rear", "left", "right", "vertical", "horizontal", "top", "bottom", "inner", "clockwise", "counterclockwise", and the like, indicate orientations and positional relationships based on those shown in the drawings, and are used only for convenience of description and simplicity of description, and do not indicate or imply that the device or element being referred to must have a particular orientation, be constructed and operated in a particular orientation, and thus, are not to be considered as limiting the present invention.
Furthermore, the terms "first", "second" and "first" are used for descriptive purposes only and are not to be construed as indicating or implying relative importance or implicitly indicating the number of technical features indicated. Thus, a feature defined as "first" or "second" may explicitly or implicitly include one or more of that feature. In the description of the present invention, unless otherwise specified, "a plurality" means two or more unless explicitly defined otherwise.
In the present invention, unless otherwise expressly specified or limited, the terms "mounted," "connected," "secured," and the like are to be construed broadly and can, for example, be fixedly connected, detachably connected, or integrally connected; can be mechanically or electrically connected; they may be connected directly or indirectly through intervening media, or they may be interconnected between two elements. The specific meanings of the above terms in the present invention can be understood by those skilled in the art according to specific situations.
In the present invention, unless otherwise expressly stated or limited, "above" or "below" a first feature means that the first and second features are in direct contact, or that the first and second features are not in direct contact but are in contact with each other via another feature therebetween. Also, the first feature being "on," "above" and "over" the second feature includes the first feature being directly on and obliquely above the second feature, or merely indicating that the first feature is at a higher level than the second feature. A first feature being "under," "below," and "beneath" a second feature includes the first feature being directly under and obliquely below the second feature, or simply meaning that the first feature is at a lesser elevation than the second feature.
Example 1
A power fet Mosfet dual-sided cooling application configuration as shown in fig. 1-6, comprising: the heat dissipation structure comprises a first radiator 1, a first heat conduction interface material 2, a PCB 3, a power field effect tube metal heat dissipation substrate 4, a power field effect tube 5, a second heat conduction interface material 6 and a second radiator 7, wherein through holes are formed in the PCB 3, a plurality of through holes are formed in the through holes, the power field effect tube 5 is arranged on the PCB 3, the power field effect tube metal heat dissipation substrate 4 is arranged at the bottom of the power field effect tube 5, and the power field effect tube metal heat dissipation substrate 4 is in contact with the PCB 3; the top of the power field effect transistor 5 is coated with a second heat conduction interface material 6, and the top of the second heat conduction interface material 6 is provided with a second radiator 7; the bottom of the PCB 3 is provided with a first heat conduction interface material 2, the first heat conduction interface material 2 extends into the through hole, and the bottom of the first heat conduction interface material 2 is provided with a first radiator 1.
In this embodiment, the via hole corresponds to the power field effect transistor metal heat dissipation substrate 4, and the first thermal interface material 2 fills the via hole.
In this embodiment, the first thermal interface material 2 covers the top of the first heat sink 1, and the first thermal interface material 2 fills the top space of the first heat sink 1 by using a caulking method.
The second thermal interface material 6 described in this embodiment extends to the second heat sink 7 for potting.
In this embodiment, the first thermal interface material 2 is made of a thermal conductive adhesive, and the second thermal interface material 6 is also made of a thermal conductive adhesive.
The first radiator 1 of the radiator in this embodiment may be an air-cooled radiator, and the first radiator 1 may be embedded in a water pipe to become a water-cooled radiator.
In the first radiator 1 described in this embodiment, a first water-cooling pipe 11 is provided.
The second heat sink 7 in this embodiment may be an aluminum alloy sheet metal part, or a die-cast aluminum alloy part or an aluminum alloy profile heat sink.
The second radiator 7 described in this embodiment is provided with a second water-cooled tube 71 therein.
Example 2
A power field effect transistor Mosfet double-sided cooling application structure as shown in fig. 1 and 2, comprising: the heat dissipation structure comprises a first radiator 1, a first heat conduction interface material 2, a PCB 3, a power field effect tube metal heat dissipation substrate 4, a power field effect tube 5, a second heat conduction interface material 6 and a second radiator 7, wherein through holes are formed in the PCB 3, a plurality of through holes are formed in the through holes, the power field effect tube 5 is arranged on the PCB 3, the power field effect tube metal heat dissipation substrate 4 is arranged at the bottom of the power field effect tube 5, and the power field effect tube metal heat dissipation substrate 4 is in contact with the PCB 3; the top of the power field effect transistor 5 is coated with a second heat conduction interface material 6, and the top of the second heat conduction interface material 6 is provided with a second radiator 7; the bottom of the PCB 3 is provided with a first heat conduction interface material 2, the first heat conduction interface material 2 extends into the through hole, and the bottom of the first heat conduction interface material 2 is provided with a first radiator 1.
In this embodiment, the via hole corresponds to the power field effect transistor metal heat dissipation substrate 4, and the first thermal interface material 2 fills the via hole.
The first heat conducting interface material 2 in this embodiment covers the top of the first heat sink 1, and the first heat conducting interface material 2 fills the space at the top of the first heat sink 1 by using a seam filling method.
The second thermal interface material 6 described in this embodiment extends to the second heat sink 7 for potting.
In this embodiment, the first thermal interface material 2 is made of a thermal conductive adhesive, and the second thermal interface material 6 is also made of a thermal conductive adhesive.
Example 3
A power field effect transistor Mosfet double-sided cooling application structure as shown in fig. 1 and 4, comprising: the heat dissipation structure comprises a first radiator 1, a first heat conduction interface material 2, a PCB 3, a power field effect tube metal heat dissipation substrate 4, a power field effect tube 5, a second heat conduction interface material 6 and a second radiator 7, wherein through holes are formed in the PCB 3, a plurality of through holes are formed in the through holes, the power field effect tube 5 is arranged on the PCB 3, the power field effect tube metal heat dissipation substrate 4 is arranged at the bottom of the power field effect tube 5, and the power field effect tube metal heat dissipation substrate 4 is in contact with the PCB 3; the top of the power field effect transistor 5 is coated with a second heat conduction interface material 6, and the top of the second heat conduction interface material 6 is provided with a second radiator 7; the bottom of the PCB 3 is provided with a first heat conduction interface material 2, the first heat conduction interface material 2 extends into the through hole, and the bottom of the first heat conduction interface material 2 is provided with a first radiator 1.
The second heat sink 7 in this embodiment is an aluminum alloy profile heat sink.
Example 4
A power fet Mosfet double-sided cooling application configuration as shown in fig. 1, 5 and 6, comprising: the heat dissipation structure comprises a first radiator 1, a first heat conduction interface material 2, a PCB 3, a power field effect tube metal heat dissipation substrate 4, a power field effect tube 5, a second heat conduction interface material 6 and a second radiator 7, wherein through holes are formed in the PCB 3, a plurality of through holes are formed in the through holes, the power field effect tube 5 is arranged on the PCB 3, the power field effect tube metal heat dissipation substrate 4 is arranged at the bottom of the power field effect tube 5, and the power field effect tube metal heat dissipation substrate 4 is in contact with the PCB 3; the top of the power field effect transistor 5 is coated with a second heat conduction interface material 6, and the top of the second heat conduction interface material 6 is provided with a second radiator 7; the bottom of the PCB 3 is provided with a first heat conduction interface material 2, the first heat conduction interface material 2 extends into the through hole, and the bottom of the first heat conduction interface material 2 is provided with a first radiator 1.
The first radiator 1 of the radiator described in this embodiment is a water-cooled radiator.
In the first radiator 1 described in this embodiment, a first water-cooling pipe 11 is provided.
The second radiator 7 described in this embodiment is provided with a second water-cooling tube 71 therein.
The foregoing is only a preferred embodiment of the present invention, and it should be noted that modifications can be made by those skilled in the art without departing from the principle of the present invention, and these modifications should also be construed as the protection scope of the present invention.
Claims (9)
1. A power field effect transistor (Mosfet) double-sided cooling application structure is characterized in that: the method comprises the following steps: the heat dissipation device comprises a first radiator (1), a first heat conduction interface material (2), a PCB (printed circuit board) plate (3), a power field effect tube metal heat dissipation substrate (4), a plurality of power field effect tubes (5), a second heat conduction interface material (6) and a second radiator (7), wherein through holes are formed in the PCB plate (3), the power field effect tubes (5) are arranged on the PCB plate (3), the power field effect tube metal heat dissipation substrate (4) is arranged at the bottom of the power field effect tube (5), and the power field effect tube metal heat dissipation substrate (4) is in contact with the PCB plate (3); a second heat conduction interface material (6) is coated on the top of the power field effect transistor (5), and a second radiator (7) is arranged on the top of the second heat conduction interface material (6); the PCB is characterized in that a first heat conduction interface material (2) is arranged at the bottom of the PCB (3), the first heat conduction interface material (2) extends into the through hole, and a first radiator (1) is arranged at the bottom of the first heat conduction interface material (2).
2. A power field effect transistor (Mosfet) dual sided cooling application structure in accordance with claim 1, wherein: the through hole corresponds to the power field effect transistor metal heat dissipation substrate (4), and the first heat conduction interface material (2) fills the through hole.
3. A power field effect transistor (Mosfet) dual sided cooling application structure in accordance with claim 1, wherein: the first heat conduction interface material (2) covers the top of the first radiator (1), and the first heat conduction interface material (2) fills the top space of the first radiator (1) by adopting a gap filling method.
4. A power field effect transistor (Mosfet) dual sided cooling application structure in accordance with claim 1, wherein: the second heat-conducting interface material (6) extends to the second radiator (7) for encapsulation by an encapsulation method.
5. A power field effect transistor (Mosfet) dual sided cooling application structure in accordance with claim 1, wherein: the first heat-conducting interface material (2) is made of heat-conducting glue, and the second heat-conducting interface material (6) is also made of heat-conducting glue.
6. A power field effect transistor (Mosfet) dual sided cooling application structure in accordance with claim 1, wherein: the first radiator (1) is one of an air-cooled radiator or a water-cooled radiator embedded in a water pipe.
7. A power field effect transistor (Mosfet) dual sided cooling application structure in accordance with claim 6, wherein: a first water-cooling pipe (11) is arranged in the first radiator (1).
8. A power field effect transistor (Mosfet) dual sided cooling application structure in accordance with claim 1, wherein: the second radiator (7) is one of an aluminum alloy sheet metal part or a die-casting aluminum alloy part and an aluminum alloy profile.
9. A power field effect transistor (Mosfet) dual sided cooling application structure in accordance with claim 8, wherein: and a second water-cooling pipe (71) is arranged in the second radiator (7).
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202123293495.6U CN216671607U (en) | 2021-12-26 | 2021-12-26 | Power field effect transistor (Mosfet) double-sided cooling application structure |
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| Application Number | Priority Date | Filing Date | Title |
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| CN202123293495.6U CN216671607U (en) | 2021-12-26 | 2021-12-26 | Power field effect transistor (Mosfet) double-sided cooling application structure |
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| CN216671607U true CN216671607U (en) | 2022-06-03 |
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| CN202123293495.6U Active CN216671607U (en) | 2021-12-26 | 2021-12-26 | Power field effect transistor (Mosfet) double-sided cooling application structure |
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