CN216595868U - 一种投影仪 - Google Patents
一种投影仪 Download PDFInfo
- Publication number
- CN216595868U CN216595868U CN202123295148.7U CN202123295148U CN216595868U CN 216595868 U CN216595868 U CN 216595868U CN 202123295148 U CN202123295148 U CN 202123295148U CN 216595868 U CN216595868 U CN 216595868U
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- CN
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- Prior art keywords
- projector
- heat dissipation
- cavity
- heat
- chamber
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
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- 230000017525 heat dissipation Effects 0.000 claims abstract description 42
- 239000004020 conductor Substances 0.000 claims abstract description 6
- 238000005192 partition Methods 0.000 claims description 22
- 230000003287 optical effect Effects 0.000 claims description 11
- 229910000838 Al alloy Inorganic materials 0.000 claims description 4
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 claims description 4
- 229910000881 Cu alloy Inorganic materials 0.000 claims description 4
- 239000010949 copper Substances 0.000 claims description 4
- 229910052802 copper Inorganic materials 0.000 claims description 4
- 230000001681 protective effect Effects 0.000 claims description 4
- 230000002035 prolonged effect Effects 0.000 abstract description 6
- 238000007789 sealing Methods 0.000 description 8
- 238000001816 cooling Methods 0.000 description 6
- 239000000428 dust Substances 0.000 description 4
- 239000003344 environmental pollutant Substances 0.000 description 4
- 239000000463 material Substances 0.000 description 4
- 231100000719 pollutant Toxicity 0.000 description 4
- 238000009833 condensation Methods 0.000 description 3
- 230000005494 condensation Effects 0.000 description 3
- 238000009434 installation Methods 0.000 description 3
- 230000002349 favourable effect Effects 0.000 description 2
- 230000005855 radiation Effects 0.000 description 2
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 1
- 229910052782 aluminium Inorganic materials 0.000 description 1
- 230000009172 bursting Effects 0.000 description 1
- 238000011109 contamination Methods 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 238000007599 discharging Methods 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 239000000203 mixture Substances 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000000750 progressive effect Effects 0.000 description 1
- 238000002791 soaking Methods 0.000 description 1
- -1 this Substances 0.000 description 1
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Chemical compound O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 1
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Abstract
Description
Claims (10)
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
CN202123295148.7U CN216595868U (zh) | 2021-12-23 | 2021-12-23 | 一种投影仪 |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
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CN202123295148.7U CN216595868U (zh) | 2021-12-23 | 2021-12-23 | 一种投影仪 |
Publications (1)
Publication Number | Publication Date |
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CN216595868U true CN216595868U (zh) | 2022-05-24 |
Family
ID=81616631
Family Applications (1)
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CN202123295148.7U Active CN216595868U (zh) | 2021-12-23 | 2021-12-23 | 一种投影仪 |
Country Status (1)
Country | Link |
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CN (1) | CN216595868U (zh) |
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2021
- 2021-12-23 CN CN202123295148.7U patent/CN216595868U/zh active Active
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Legal Events
Date | Code | Title | Description |
---|---|---|---|
GR01 | Patent grant | ||
GR01 | Patent grant | ||
CP01 | Change in the name or title of a patent holder |
Address after: 100176 5th floor, block B, block 19, Han's enterprise Bay, yard 8, Liangshuihe 2nd Street, Beijing Economic and Technological Development Zone, Beijing Patentee after: Jiangsu radium Technology Co.,Ltd. Address before: 100176 5th floor, block B, block 19, Han's enterprise Bay, yard 8, Liangshuihe 2nd Street, Beijing Economic and Technological Development Zone, Beijing Patentee before: BEIJING LITRONICS OPTOELECTRONICS TECHNOLOGY CO.,LTD. |
|
CP01 | Change in the name or title of a patent holder | ||
CP02 | Change in the address of a patent holder |
Address after: Room 401, room 402, building 1, Zone C, industrial square, science and Technology City, 588 Wutaishan Road, high tech Zone, Suzhou City, Jiangsu Province, 215000 Patentee after: Jiangsu radium Technology Co.,Ltd. Address before: 100176 5th floor, block B, block 19, Han's enterprise Bay, yard 8, Liangshuihe 2nd Street, Beijing Economic and Technological Development Zone, Beijing Patentee before: Jiangsu radium Technology Co.,Ltd. |
|
CP02 | Change in the address of a patent holder |