CN216531273U - High-efficiency MOS (Metal oxide semiconductor) driving loop of PWM (pulse-Width modulation) controller - Google Patents

High-efficiency MOS (Metal oxide semiconductor) driving loop of PWM (pulse-Width modulation) controller Download PDF

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Publication number
CN216531273U
CN216531273U CN202122447777.0U CN202122447777U CN216531273U CN 216531273 U CN216531273 U CN 216531273U CN 202122447777 U CN202122447777 U CN 202122447777U CN 216531273 U CN216531273 U CN 216531273U
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resistor
capacitor
diode
pwm
q2mos
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CN202122447777.0U
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朱理贤
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Kunshan Shuotong Electronics Co ltd
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Kunshan Shuotong Electronics Co ltd
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Abstract

The utility model relates to the field of power supply PWM controller MOS tube driving circuits, and discloses a high-efficiency PWM controller MOS driving circuit which comprises an R1 resistor, an R2 resistor, an R4 resistor, an R5 resistor, an R6 resistor, an R7 resistor, an R8 resistor, a Q1 triode, a Q2MOS tube, a C1 capacitor, a C2 capacitor, a C3 capacitor, a C4 capacitor, a D1 diode, a D2 diode, a D3 diode, a D4 diode and a T1 transformer.

Description

High-efficiency MOS (Metal oxide semiconductor) driving loop of PWM (pulse-Width modulation) controller
Technical Field
The utility model relates to the field of power supply PWM controller MOS tube driving loops, in particular to a high-efficiency PWM controller MOS driving loop.
Background
In the existing PWM controller, a resistor is generally used for driving an MOS tube by the PWM controller, a switch grid circuit of the MOS tube passes through the resistor, when the MOS tube is switched off, the circuit passes through the resistor to the inside of a chip and then to the ground, and the circuit is longer, is switched off, has low speed and large loss.
Therefore, a high-efficiency PWM controller MOS driving loop is designed.
Disclosure of Invention
Aiming at the defects of the prior art, the utility model provides a high-efficiency PWM controller MOS driving circuit, which solves the problem of larger loss of the prior equipment.
In order to achieve the purpose, the utility model adopts the technical scheme that: a high-performance PWM controller MOS driving circuit comprises an R1 resistor, an R2 resistor, an R4 resistor, an R5 resistor, an R6 resistor, an R7 resistor, an R8 resistor, a triode Q1, a Q2MOS transistor, a C1 capacitor, a C2 capacitor, a C3 capacitor, a C4 capacitor, a D1 diode, a D2 diode, a D3 diode, a D4 diode and a T1 transformer, wherein one end of the R1 resistor is connected with the D1 diode, the other end of the R1 resistor is connected with a PWM chip and the Q1 triode, one end of the R2 resistor is connected with the D1 diode and the Q1 triode, the other end of the R2 resistor is connected with the Q2MOS transistor, one end of the R4 resistor is connected with the PWM chip, the other end of the R4 resistor is connected with the C1 capacitor and the R1 resistor, one end of the R1 resistor is connected with the D1 diode, the other end of the PWM chip and the R1 resistor are connected with the PWM chip, one end of the R1 resistor is connected with the PWM chip 1 resistor 1, one end of the resistor 1 resistor is connected with the PWM chip and the C1 resistor 1, one end of the PWM chip is connected with the PWM chip 1 resistor and the PWM chip, one end of the C1 resistor is connected with the PWM chip, one end of a resistor R7 is connected with a capacitor C2 and a diode D3, the other end of a resistor R7 is connected with a capacitor C1 and a resistor R4, one end of the resistor R8 is connected with a transformer T1, a PWM chip, a resistor R6 and a capacitor C3, the other end of the resistor R8 is connected with a triode Q1 and a transistor Q2mos, one end of a capacitor C4 is connected with a transformer T1, and the other end of the capacitor C4 is connected with a diode D4.
Further, one end of the T1 transformer is connected with the DET auxiliary winding.
Furthermore, the R6 resistor, the R8 resistor, the C3 capacitor and one end of the D2 diode are grounded.
Further, one end of the capacitor C1 is grounded.
The utility model has the beneficial effects that: the utility model discloses a, through T1 transformer, DET auxiliary winding is the power supply of PWM chip U1, and U13 PIN is current sampling PIN, through sampling resistance R8 ground connection, and U15 PIN is MOS pipe drive PIN, and R1 resistance, R2 resistance, D1 diode, Q1 triode constitute drive circuit drive Q2MOS pipe, generally set up R1 resistance slightly big, and R2 resistance is less. When the Q2mos tube is driven to be conducted by PWM, the Q2mos tube is driven to be conducted by a resistor-D1 diode-R2 resistor of a loop R1, the resistance value of the R1 accounts for the main component, the slightly larger value is beneficial to reducing switching noise, and the EMI effect is better; when the Q2MOS tube is switched off, the Q1 triode works in an amplification region, the gate current of the Q2MOS tube is directly connected to the ground through the R2 resistor-Q1 triode-R8 resistor instead of being connected to the PWM 5PIN through the R1 resistor with larger resistance value and then connected to the ground, so that the impedance of a switching-off loop can be reduced, the Q2MOS tube is switched off quickly, MOS loss is reduced, and the power supply efficiency is improved.
Drawings
FIG. 1 is a schematic structural view of the present invention; FIG. 2 is a schematic top view of the present invention; fig. 3 is a circuit diagram of the present invention.
In the figure: 1. r1 resistance; 2. r2 resistance; 3. r4 resistance; 4. r5 resistance; 5. r6 resistance; 6. r7 resistance; 7. r8 resistance; 8. a Q1 triode; 9. q2mos tube; 10. a C1 capacitance; 11. a C2 capacitance; 12. a C3 capacitance; 13. a C4 capacitance; 14. a D1 diode; 15. a D2 diode; 16. a D3 diode; 17. a D4 diode; 18. t1 transformer.
Detailed Description
In order to make the objects, technical solutions and advantages of the embodiments of the present invention clearer, the technical solutions in the embodiments of the present invention will be clearly and completely described below with reference to the drawings in the embodiments of the present invention, and it is obvious that the described embodiments are some, but not all, embodiments of the present invention. All other embodiments, which can be derived by a person skilled in the art from the embodiments given herein without making any creative effort, shall fall within the protection scope of the present invention.
Referring to FIGS. 1-3: a high-performance PWM controller MOS driving circuit comprises an R1 resistor 1, an R1 resistor 2, an R1 resistor 3, an R1 resistor 4, an R1 resistor 5, an R1 resistor 6, an R1 resistor 7, a Q1 triode 8, a Q2MOS tube 9, a C1 capacitor 10, a C1 capacitor 11, a C1 capacitor 12, a C1 capacitor 13, a D1 diode 14, a D1 diode 15, a D1 diode 16, a D1 diode 17 and a T1 transformer 18, wherein the R1 resistor 1 is connected with the D1 diode 14 at one end, the R1 resistor 1 is connected with the PWM chip and the Q1 triode 8 at the other end, the R1 resistor 2 is connected with the D1 diode 14 and the Q1 diode 8 at one end, the R1 resistor 2 is connected with the Q2MOS tube 9 at the other end, the R1 resistor 3 is connected with the PWM chip at one end, the R1 resistor 3 is connected with the C1 resistor 10 at the other end and the R1 resistor 1 and the R1 resistor 6856, the R1 resistor 1 is connected with the other end, the R1 resistor 1 is connected with the D1 resistor 1 is connected with the PWM chip at one end, the D1 resistor 1 and the other end, and the resistor 1 is connected with the D1 resistor 1 is connected with the D1 resistor 1, and the D1 resistor 1 is connected with the D, and the other end, and the R1 resistor 1 is connected with the other end, and the resistor 1 is connected with the resistor 1, and the resistor 1 is connected with the other end, the resistor 1 is connected with the D is connected with the other end, and the resistor 1 is connected with the D, and the resistor 1 is connected with the resistor 1 is connected with the other end, and the D is connected with the resistor 1, and the D is connected with the other end, and the D is connected with the D, and the D is connected with the resistor 1, and the D is connected with the resistor 1, and the D is connected, one end of a resistor 5R 6 is connected with a capacitor 12C 3, the other end of a resistor 5R 6 is connected with a PWM chip, one end of a resistor 6R 7 is connected with a capacitor 11C 2 and a diode 16D 3, the other end of the resistor R7 is connected with a capacitor 10C 1 and a resistor 3R 4, one end of a resistor 7R 8 is connected with a transformer 18T 1, the PWM chip, the resistor 5R 6 and the capacitor 12C 3, the other end of the resistor 7R 8 is connected with a triode 8Q 1 and a tube 9Q 2mos, one end of a capacitor 13C 4 is connected with the transformer 18T 1, and the other end of a capacitor 13C 4 is connected with a diode 17D 4.
One end of a T1 transformer 18 is connected with the DET auxiliary winding, one end of the R6 resistor 5, the R8 resistor 7, the C3 capacitor 12 and one end of the D2 diode 15 are grounded, and one end of the C1 capacitor 10 is grounded.
In summary, when the utility model is used, the T1 transformer 18 and the DET auxiliary winding supply power to the PWM chip U1, the U13 PIN is a current sampling PIN, the current sampling PIN is grounded through the sampling resistor R8, the U15 PIN is a MOS transistor driving PIN, the R1 resistor 1, the R2 resistor 2, the D1 diode 14, and the Q1 triode 8 form a driving loop to drive the Q2MOS transistor 9, and generally, the resistance of the R1 resistor 1 is set to be slightly larger, and the resistance of the R2 resistor 2 is set to be smaller. When the Q2mos tube 9 is driven to be conducted by PWM, the Q2mos tube 9 is driven to be conducted by the R1 resistor 1-D1 diode 14-R2 resistor 2, the resistance value of the R1 resistor 1 accounts for the main component, the slightly larger value is beneficial to reducing switching noise, and the EMI effect is better; when the Q2MOS tube 9 is switched off, the Q1 triode 8 works in an amplification region, the grid current of the Q2MOS tube 9 is directly connected to the ground through the R2 resistor 2-Q1 triode 8-R8 resistor 7 instead of being connected to the ground through the R1 resistor 1 with larger resistance value to the PWM 5PIN, so that the impedance of a switching-off loop can be reduced, the Q2MOS tube 9 is switched off quickly, MOS loss is reduced, and the power supply efficiency is improved.
The above examples are only intended to illustrate the technical solution of the present invention, but not to limit it; although the present invention has been described in detail with reference to the foregoing embodiments, it will be understood by those of ordinary skill in the art that: the technical solutions described in the foregoing embodiments may still be modified, or some technical features may be equivalently replaced; and such modifications or substitutions do not depart from the spirit and scope of the corresponding technical solutions of the embodiments of the present invention.

Claims (4)

1. A high-performance PWM controller MOS drive loop comprises an R1 resistor (1), an R2 resistor (2), an R4 resistor (3), an R5 resistor (4), an R6 resistor (5), an R7 resistor (6), an R8 resistor (7), a Q1 triode (8), a Q2MOS tube (9), a C1 capacitor (10), a C2 capacitor (11), a C3 capacitor (12), a C4 capacitor (13), a D1 diode (14), a D2 diode (15), a D3 diode (16), a D4 diode (17) and a T1 transformer (18), and is characterized in that: one end of the R1 resistor (1) is connected with a diode (14) of a D1, the other end of the R1 resistor (1) is connected with a PWM chip and a triode (8) of a Q1, one end of the R2 resistor (2) is connected with a diode (14) of a D1 and a triode (8) of a Q1, the other end of the R2 resistor (2) is connected with a tube (9) of a Q2mos, one end of the R4 resistor (3) is connected with the PWM chip, the other end of the R4 resistor (3) is connected with a capacitor (10) of a C1 and a resistor (6) of a R7, one end of the R5 resistor (4) is connected with a diode (15) of a D2, the other end of the R5 resistor (4) is connected with the PWM chip and a resistor (5) of a R6, one end of the R6 resistor (5) is connected with a capacitor (12) of a C3, the other end of the R6 resistor (5) is connected with the PWM chip, one end of the R7 resistor (6) is connected with a capacitor (11) of a C2 and a diode (16) of a D468, one end of the R462 is connected with a capacitor (6472) and a resistor (6853) of a capacitor (6853) of a C4973), one end of a R8 resistor (7) is connected with a T1 transformer (18), a PWM chip, a R6 resistor (5) and a C3 capacitor (12), the other end of a R8 resistor (7) is connected with a Q1 triode (8) and a Q2mos tube (9), one end of a C4 capacitor (13) is connected with a T1 transformer (18), and the other end of the C4 capacitor (13) is connected with a D4 diode (17).
2. A high performance PWM controller MOS drive circuit according to claim 1, wherein: one end of the T1 transformer (18) is connected with the DET auxiliary winding.
3. A high performance PWM controller MOS drive circuit according to claim 1, wherein: one end of the R6 resistor (5), the R8 resistor (7), the C3 capacitor (12) and the D2 diode (15) is grounded.
4. A high performance PWM controller MOS drive circuit according to claim 1, wherein: one end of the C1 capacitor (10) is grounded.
CN202122447777.0U 2021-10-12 2021-10-12 High-efficiency MOS (Metal oxide semiconductor) driving loop of PWM (pulse-Width modulation) controller Active CN216531273U (en)

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CN202122447777.0U CN216531273U (en) 2021-10-12 2021-10-12 High-efficiency MOS (Metal oxide semiconductor) driving loop of PWM (pulse-Width modulation) controller

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