CN216413038U - Sucking disc for chamfering ultrathin silicon wafer - Google Patents
Sucking disc for chamfering ultrathin silicon wafer Download PDFInfo
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- CN216413038U CN216413038U CN202123162033.0U CN202123162033U CN216413038U CN 216413038 U CN216413038 U CN 216413038U CN 202123162033 U CN202123162033 U CN 202123162033U CN 216413038 U CN216413038 U CN 216413038U
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- upper cover
- silicon wafer
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Abstract
The utility model provides a sucker for chamfering an ultrathin silicon wafer in the technical field of semiconductors, which comprises: a substrate; and an upper cover disposed over the base; micropores are uniformly distributed on the upper cover; the base body is communicated with the upper cover, so that an adsorption area is formed on the upper surface of the upper cover. According to the utility model, the micropores are uniformly distributed on the upper cover, so that the adsorption force generated by the matrix is uniformly dispersed to the micropores at each position of the bottom of the upper cover, then the adsorption force is uniformly dispersed to the upper surface of the upper cover, an adsorption area is formed, and the placed silicon wafer is adsorbed, so that the uniformity of stress on the surface of the silicon wafer after the silicon wafer is placed is ensured, the problems of damage, warpage and the like of the silicon wafer caused by concentrated adsorption force of the silicon wafer are solved, and the method has the advantages of high stability of loading the ultrathin silicon wafer, high chamfering precision and the like.
Description
Technical Field
The utility model relates to the technical field of semiconductors, in particular to a sucker for chamfering an ultrathin silicon wafer.
Background
When the silicon wafer is manufactured, chamfering is needed to increase the mechanical strength of the edge surface of the silicon wafer.
Chinese patent CN209021794U discloses: the device comprises a rack, a first mounting area, a second mounting area and a third mounting area, wherein the rack is provided with the first mounting area, the second mounting area and the third mounting area; the chamfering assembly is arranged on the first installation area; the transverse driving assembly is arranged on the third mounting area; the longitudinal driving assembly is arranged on the transverse driving assembly in a sliding mode; the adsorption component is connected and arranged on the longitudinal driving component; a zeroing area is formed between the left positioning component and the right positioning component and the position sensing component.
Among the above-mentioned technical scheme, install the direct antiport of chamfer subassembly during the chamfer and realize the installation on the lead screw seat of first installation region, lead to easily that the emergence of chamfer subassembly in the use is not hard up, and then influence the chamfer precision, the passageway that chamfer subassembly produced suction moreover is central negative pressure passageway, leads to the atress to concentrate at the center and the fragmentation appears when adsorbing the silicon chip, warpage etc..
The application provides a suction when guaranteeing to load the silicon chip is even and the stable structural design of installation, and the atress when having solved the loading silicon chip is concentrated and is leaded to fragment, warpage etc. has solved the sucking disc simultaneously and has installed unstable technical problem to the installation region, has guaranteed the high-efficient stable chamfer processing of silicon chip.
SUMMERY OF THE UTILITY MODEL
Aiming at the defects of the prior art, the utility model provides the sucker for chamfering the ultrathin silicon wafer, which provides adsorption force through micropores uniformly distributed on the upper cover in size, provides adsorption force through the matrix, uniformly reaches the adsorption channel, and reaches the upper surface of the upper cover through the micropores to form an adsorption area, so that the lower surface of the silicon wafer is uniformly and tightly adsorbed on the surface of the upper cover through the adsorption area, and the surface of the silicon wafer is tightly adsorbed on the surface of the upper cover, thereby solving the technical problems in the background art.
In order to achieve the purpose, the utility model provides the following technical scheme:
the utility model provides an ultra-thin silicon chip sucking disc for chamfer which characterized in that includes: a substrate; and an upper cover disposed over the base; micropores are uniformly distributed on the upper cover; the base body is communicated with the upper cover, so that an adsorption area is formed on the upper surface of the upper cover.
Further, a gas channel is formed between the upper cover and the base body.
Furthermore, a plurality of micropores communicated with the gas channel are uniformly distributed on the upper cover.
Furthermore, a supporting piece used for forming the gas channel between the upper cover and the base body is arranged between the upper cover and the base body.
Furthermore, the supporting pieces are arranged in a plurality and are uniformly distributed on the base body.
Furthermore, an air exhaust structure is arranged on the base body.
Furthermore, the edge of the base body is provided with a blocking wall for matching and containing the upper cover.
Further, the upper cover is a component made of ceramic materials.
Further, the base body is a component made of ceramic materials.
Furthermore, the base body and the upper cover are sealed and fixed in one of sintering, electroplating and bonding modes.
The utility model has the beneficial effects that:
(1) according to the utility model, the micropores are uniformly distributed on the upper cover, so that the adsorption force generated by the matrix is uniformly dispersed to the micropores at each position of the bottom of the upper cover, then the adsorption force is uniformly dispersed to the upper surface of the upper cover, an adsorption area is formed, and the placed silicon wafer is adsorbed, so that the uniformity of stress on the surface of the silicon wafer after the silicon wafer is placed is ensured, and the problems of damage, warping and the like of the silicon wafer caused by the concentrated adsorption force of the silicon wafer are solved;
(2) according to the utility model, through the arrangement of the gas channel and the support between the upper cover and the base body by the support piece, the adsorption force generated by the base body is more uniformly dispersed into the gas channel and reaches the top of the upper cover, so that the top of the upper cover generates more uniform suction force to the silicon wafer through the micropores, and the stability of the silicon wafer during chamfering is further ensured;
(3) the utility model can ensure the stability of the upper cover absorbing the silicon wafer chamfer angle by utilizing the installation of a plurality of groups of fasteners between the base and the upper cover;
in conclusion, the utility model has the advantages of high stability for loading ultrathin silicon wafers, high chamfering precision and the like.
Drawings
FIG. 1 is a schematic view of the overall structure of the present invention;
FIG. 2 is a schematic bottom view of FIG. 1 according to the present invention;
FIG. 3 is a schematic view of the structure of FIG. 1 with the upper cover removed;
FIG. 4 is an enlarged view taken at A of FIG. 3 according to the present invention;
FIG. 5 is a schematic view of the utility model shown in FIG. 2 with the fastener and suction cup spacer removed;
FIG. 6 is a schematic structural view of the upper cover of the present invention;
fig. 7 is a cross-sectional view F-F of fig. 1 in accordance with the present invention.
Detailed Description
The technical solutions in the embodiments of the present invention will be clearly and completely described below with reference to the drawings in the embodiments of the present invention, and it is obvious that the described embodiments are only a part of the embodiments of the present invention, and not all of the embodiments. All other embodiments, which can be derived by a person skilled in the art from the embodiments given herein without making any creative effort, shall fall within the protection scope of the present invention.
In the description of the present invention, it is to be understood that the terms "center", "longitudinal", "lateral", "length", "width", "thickness", "upper", "lower", "front", "rear", "left", "right", "vertical", "horizontal", "top", "bottom", "inner", "outer", "clockwise", "counterclockwise", and the like, indicate orientations and positional relationships based on those shown in the drawings, and are used only for convenience of description and simplicity of description, and do not indicate or imply that the equipment or element being referred to must have a particular orientation, be constructed and operated in a particular orientation, and thus, should not be considered as limiting the present invention. Furthermore, the terms "first", "second" and "first" are used for descriptive purposes only and are not to be construed as indicating or implying relative importance or implicitly indicating the number of technical features indicated. Thus, a feature defined as "first" or "second" may explicitly or implicitly include one or more of that feature. In the description of the present invention, "a plurality" means two or more unless specifically defined otherwise.
Example one
As shown in FIG. 1, a chuck for chamfering an ultra-thin silicon wafer comprises:
a substrate 1; and
an upper cover 2 arranged above the base body 1;
micropores are uniformly arranged on the upper cover 2;
the substrate 1 is communicated with the upper cover 2, so that an adsorption area is formed on the upper surface of the upper cover 2.
Through the above, it is not easy to find that, in the process of chamfering an ultrathin silicon wafer by using the sucker of the present application, when the ultrathin silicon wafer is adsorbed and mounted, through the communication between the base body 1 and the upper cover 2, when the base body 1 provides, for example, vacuum suction force for the upper cover 2, the suction force can act on the upper surface of the upper cover 2 through the micropores, so that after the silicon wafer is placed on the upper cover 2, the silicon wafer can be adsorbed on the surface of the upper cover 2 by the adsorption force of the adsorption area, and through the structural design of the micropores uniformly arranged, after vacuum pumping, the vacuum adsorption force is dispersed through the micropores which are closely and regularly arranged, so that the suction force acting on the surface of the silicon wafer is uniformly distributed, and particularly for the ultrathin silicon wafer, on the one hand, the sucker marks on the silicon wafer can be avoided, and the surface of the silicon wafer can be damaged; on the other hand, the suction force concentration when the silicon wafer is sucked can be effectively prevented, and the silicon wafer is damaged, warped and the like when being sucked and installed on the sucker.
It should be added that, as shown in fig. 2 and 5, a gasket groove 8 is formed at the bottom of the base body 1, and a suction cup gasket 9 is installed in the gasket groove 8.
In this embodiment, the elastic force of the suction cup gasket 9 installed in the gasket groove 8 at the bottom of the base body 1 is utilized, so that the stability of the base body 1 when the fastening piece is used for installing the suction cup main body is ensured.
As shown in fig. 7, a gas channel 6 is formed between the upper cover 2 and the base 1.
In the present embodiment, when the base 1 provides the upper cover 2 with the negative pressure adsorption region of the upper surface, the vacuum suction force provided to the upper cover 2 by the base 1 acts on the gas channel 6, so that the adsorption force further acts on the adsorption region of the upper surface of the upper cover 2 uniformly after being dispersed in the gas channel 6 uniformly.
More specifically, a plurality of micropores communicated with the gas channel 6 are uniformly distributed on the upper cover 2.
In this embodiment, the adsorption force of the substrate 1 acts on the gas channel 6, so as to uniformly reach the adsorption region on the top of the upper cover 2 through the micropores on the upper cover 2, thereby forming the adsorption force on the silicon wafer.
Preferably, the micropores are of a uniform size chamber structure.
In this embodiment, the suction force generated by the top surface of the upper cover 2 to the silicon wafer can be ensured to be uniform by ensuring that the size of the cavity of the micropores in which the upper cover 2 is densely packed is uniform, and the micropores are preferably spherical structures and may be in other shapes, such as oval, triangular, etc.
As shown in fig. 4 and 7, a support 7 for forming the gas channel 6 is provided between the upper cover 2 and the base 1.
In this embodiment, the gas passage 6 is stabilized by supporting the upper cover 2 and the base 1 by the support 7, and the gas passage 6 is stably formed by the adsorption force provided by the base 1.
It should be noted that the supporting member 7 can support the upper surface of the base 1 by connecting with the upper cover 2, and can also support the upper cover 2 by connecting with the base 1 to form the gas channel 6.
Preferably, the supporting members 7 are provided in plurality, and are uniformly distributed on the base body 1.
In this embodiment, by providing a plurality of sets of the supporting members 7 uniformly on the base 1, the stability of the formed gas channel 6 can be ensured.
Further, the upper cover 2 is a member made of a ceramic material.
In the embodiment, the upper cover 2 is made of ceramic materials, so that the surface precision of the upper cover can be guaranteed, the silicon wafer placed on the upper cover 2 is more accurate to be chamfered, and the problems that the ultrathin silicon wafer is easy to break and warp during processing are solved.
Furthermore, the substrate 1 is a member made of a ceramic material.
In the embodiment, the base body 1 is made of a ceramic material, preferably alumina, so that the top surface of the base body 1 is flat, smooth and glossy, and the chamfering precision after the silicon wafer is placed is ensured.
Still further, one of sintering, electroplating and bonding modes is adopted between the base body 1 and the upper cover 2 for sealing and fixing.
In the present embodiment, when the base 1 and the upper cover 2 are both made of ceramic materials, the mounting may be completed by a method preferably by sintering, and when the base 1 is made of ceramic and the upper cover 2 is made of other materials, for example, metal, or when the upper cover 2 is made of ceramic and the base 1 is made of other materials, for example, metal, the mounting may be performed by a method preferably by bonding, or when the base 1 and the upper cover 2 are both made of non-ceramic materials, for example, metal, the mounting may be performed by a method preferably by plating.
The application also provides an optimized implementation mode, in order to disperse the vacuum suction as much as possible, the micropores are preferably ceramic micropores, the number of the ceramic micropores is more than 5000, specifically about 5400, the vacuum pressure is controlled to be-60 to-90 kpa at the time of chamfering at present, if the ceramic micropores are circular, the pore diameter is 120 μm, approximately 5400 ceramic micropores are arranged on the upper cover 2 of the blue microporous ceramic, the vacuum suction is uniformly dispersed in 5400 ceramic micropores, the stress of each ceramic micropore is-0.015 kpa, the distribution area is wide and uniform, and the problem of nonuniform suction is effectively solved; when the silicon chip is adsorbed on the surface of the upper cover 2 of the blue microporous ceramic, the problem of sucker marks caused by uneven suction force can be effectively solved.
Example two
As shown in fig. 2, 3, 5 and 7, in which the same or corresponding components as in the first embodiment are denoted by the same reference numerals as in the first embodiment, only the points of difference from the first embodiment will be described below for the sake of convenience. The second embodiment is different from the first embodiment in that: and the base body 1 is provided with an air exhaust structure 3.
In this embodiment, negative pressure gas generates negative pressure to the upper cover 2 through the air exhaust structure 3, and the negative pressure on the upper cover 2 can further reach the upper surface of the upper cover 2 through the micropores to form an adsorption area, so that after a silicon wafer is placed, the silicon wafer can be sucked through the suction force of the adsorption area.
In order to provide more uniform adsorption force to the adsorption area on the upper cover 2, the air exhaust structure 3 is a through hole structure, and the through hole structure is arranged in the middle of the base body 1.
In this embodiment, the negative pressure gas is supplied to the upper cover 2 through the air exhaust structure 3 which is a through hole structure, and the through hole structure is disposed in the middle of the base 1, so that the negative pressure can be uniformly dispersed from the middle to both sides to the bottom side of the upper cover 2, and reaches the negative pressure adsorption region formed at the top of the upper cover 2 through the micro holes.
Preferably, the device also comprises an air exhaust device communicated with the through hole structure 3.
In this embodiment, the evacuation device provides vacuum negative pressure suction, so that the silicon wafer can be uniformly adsorbed on the upper cover 2, and the through hole structure 3 is not limited to the air extraction device, and the through hole structure can provide negative pressure for the upper cover 2, which falls into the protection scope of the present application.
As shown in fig. 1 and 2, a plurality of fasteners 5 are inserted into the base body 1.
In this embodiment, the base 1 and the suction cup mounting base are mounted by using the plurality of fastening members 5, and the stability of the rotation direction of the base 1 after mounting can be ensured.
As shown in fig. 3 and 7, the edge of the base body 1 is provided with a blocking wall 4 formed to fittingly receive the upper cover 2.
In this embodiment, through arranging the upper cover 2 in the accommodating chamber formed by the blocking wall 4 at the edge of the base body 1, when the base body 1 causes negative pressure to the upper cover 2, the blocking wall 4 can shield the side wall of the upper cover 2, so that the negative pressure is uniformly formed on the upper surface of the upper cover 2.
Preferably, the upper surface of the upper cover 2 is flush with the upper surface of the blocking wall 4.
In this embodiment, the upper surface of the upper cover 2 is kept horizontal to the upper surface of the blocking wall 4, so that the silicon wafer can be conveniently taken and placed on the adsorption area.
The above description is only for the purpose of illustrating the preferred embodiments of the present invention and is not to be construed as limiting the utility model, and any modifications, equivalents and improvements made within the spirit and principle of the present invention are intended to be included within the scope of the present invention.
Claims (10)
1. The utility model provides an ultra-thin silicon chip sucking disc for chamfer which characterized in that includes:
a base body (1); and
an upper cover (2) arranged above the base body (1);
micropores are uniformly distributed on the upper cover (2);
the base body (1) is communicated with the upper cover (2), so that an adsorption area is formed on the upper surface of the upper cover (2).
2. The chuck for chamfering ultra-thin silicon wafers as claimed in claim 1, wherein a gas channel (6) is formed between the upper cover (2) and the base (1).
3. The chuck for chamfering ultra-thin silicon wafers as claimed in claim 2, wherein the upper cover (2) is uniformly provided with a plurality of said micro holes communicating with said gas channel (6).
4. The chuck for chamfering ultra-thin silicon wafers as claimed in claim 2, wherein a support member (7) for forming the gas channel (6) therebetween is provided between the upper cover (2) and the base (1).
5. The chuck for chamfering ultra-thin silicon wafers as claimed in claim 4, wherein the supporting member (7) is provided in plurality, and is uniformly disposed on the base (1).
6. The chuck for chamfering ultra-thin silicon wafers as claimed in claim 1, wherein the base (1) is provided with a pumping structure (3).
7. The chuck for chamfering ultra-thin silicon wafers as claimed in claim 1, wherein the edge of the base (1) is provided with a barrier wall (4) formed to fit the upper lid (2).
8. The chuck for chamfering ultra-thin silicon wafers as claimed in claim 1, wherein the upper cover (2) is a member made of a ceramic material.
9. The chuck for chamfering ultra-thin silicon wafers as claimed in claim 1 or 8, wherein the substrate (1) is a member made of a ceramic material.
10. The chuck for chamfering ultra-thin silicon wafers as claimed in claim 9, wherein the base (1) and the top cover (2) are hermetically fixed by one of sintering, electroplating and bonding.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202123162033.0U CN216413038U (en) | 2021-12-16 | 2021-12-16 | Sucking disc for chamfering ultrathin silicon wafer |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202123162033.0U CN216413038U (en) | 2021-12-16 | 2021-12-16 | Sucking disc for chamfering ultrathin silicon wafer |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN216413038U true CN216413038U (en) | 2022-04-29 |
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Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN202123162033.0U Active CN216413038U (en) | 2021-12-16 | 2021-12-16 | Sucking disc for chamfering ultrathin silicon wafer |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN216413038U (en) |
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2021
- 2021-12-16 CN CN202123162033.0U patent/CN216413038U/en active Active
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