CN216370674U - Laser processing device for stripping crystal ingot and control system - Google Patents
Laser processing device for stripping crystal ingot and control system Download PDFInfo
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Abstract
The utility model discloses a laser processing device and a control system for stripping crystal ingots, wherein the laser processing device for stripping the crystal ingots comprises a laser processing module, a distance measuring module and a movable bearing module, and the movable bearing module is positioned right below the laser processing module and the distance measuring module; the movable carrying module is used for carrying the crystal ingot to be stripped and adjusting the position of the crystal ingot to be stripped; the distance measurement module is used for measuring the height of the end face of the ingot to be stripped to obtain the height information of the end face of the ingot to be stripped; and the laser processing module adjusts the laser focusing height based on the height information of the end face of the ingot to be stripped and performs laser processing on the ingot to be stripped. The height of the end face of the crystal ingot is detected by using a distance meter, and the laser processing module adjusts the laser focusing position according to the height information to ensure that the total thickness deviation of the stripped wafer is consistent.
Description
Technical Field
The present invention relates to semiconductor manufacturing equipment, and more particularly to a laser processing apparatus and a control system for peeling off an ingot.
Background
In the process flow of semiconductor wafer processing, a complete cylindrical or rectangular ingot is generally divided into a plurality of wafers (cut pieces) by multi-line cutting. The multi-wire cutting process is generally carried out by matching a cutting wire net with abrasive particles and cutting fluid, a wafer with the thickness of 350-500 um is processed, and the material processing loss is up to 50%. In addition to the processing loss, the amount of cutting waste liquid generated in the multi-wire cutting process itself is large, and adverse effects are also brought to the environment.
In order to reduce the wafer cutting loss and adverse environmental impact, a new crystal slicing technique employs a laser lift-off technique. The core of the laser lift-off technology is to form a damaged layer at a preset depth in the ingot by using laser pulses, and then separate the wafer from the damaged layer by means of external force, thereby obtaining the wafer with the target thickness. The method for obtaining the wafer through laser stripping greatly saves the cutting loss of multi-line cutting, and meanwhile, the thickness of a defect layer introduced in the processing process is obviously lower than that of the multi-line cutting, so that the material loss of a slicing process can be greatly reduced by the laser stripping technology, the cost of the wafer is favorably reduced, and compared with the multi-line cutting, the laser processing process is more environment-friendly.
Existing laser lift-off techniques typically provide initial positioning of the ingot surface to ensure that the resulting wafer thickness is adequate. However, since only one positioning is performed, all position information of the end face of the ingot cannot be obtained, and when there are large particles on the workpiece base or the end face of the ingot is not flat, there is a certain inclination angle of the end face of the ingot in a certain direction, which causes TTV (global thickness variation) of the laser-peeled wafer to be seriously deviated from a target range, resulting in unqualified parameters of the cut wafer.
Referring to fig. 1, laser only once mechanically positions an ingot 101, and when particles 103 exist on a workpiece base, the end face of the ingot has a certain inclination angle, and a continuous laser damage layer 102 formed at a set depth can cause the global thickness variation of a wafer to deviate from a target range, and the parameters of the cut wafer are unqualified.
SUMMERY OF THE UTILITY MODEL
The utility model provides a laser processing device and a control system for stripping crystal ingots, which aim to overcome the defects in the prior art.
In order to solve the technical problem, the utility model is solved by the following technical scheme: a laser processing device for stripping crystal ingots comprises a laser processing module, a distance measuring module and a movable bearing module, wherein the movable bearing module is positioned right below the laser processing module and the distance measuring module;
the movable carrying module is used for carrying the crystal ingot to be stripped and adjusting the position of the stripped crystal ingot;
the distance measurement module is used for measuring the height of the end face of the ingot to be stripped to obtain the height information of the end face of the ingot to be stripped;
and the laser processing module adjusts the laser focusing height based on the height information of the end face of the ingot to be stripped and performs laser processing on the ingot to be stripped.
Preferably, the movable bearing module is at least provided with a group of working bit units, each group of working bit units comprises two working positions, the distance measuring module and the laser processing module are separately arranged, the laser processing module is matched with one of the working positions, and the distance measuring module is matched with the other working position.
Preferably, during work, one of the working positions in the working position unit is positioned under the laser processing module, the other working position is positioned under the distance measuring module, and the working positions have rotation and displacement functions.
Preferably, the movable bearing module is a rotary workbench, the working bit unit is arranged on the rotary workbench, the working bit corresponding to the rotary workbench is provided with a base workpiece table, and the base workpiece table is a displacement base workpiece table or a rotary base workpiece table.
Preferably, the distance meter is a laser distance meter or a white light interference type distance meter.
Preferably, the laser processing module comprises a laser and a focusing adjustment module, the laser and the focusing adjustment module are matched with each other, the laser is used for providing single-wavelength pulse laser, the focusing adjustment module is used for adjusting the laser focusing depth, and the focusing adjustment module realizes tracking of the height of the upper end face of the ingot to be stripped, so that the consistency of the thickness of the processed wafer is ensured.
Preferably, the laser is integrated with the focus adjustment module.
Preferably, the focusing adjustment module is any one or combination of two of a lens reflector optical path combination driven by a servo motor and a spatial light modulator.
Preferably, the laser is a nanosecond, picosecond or femtosecond single-wavelength pulse laser.
Preferably, the laser can be arranged outside and guided into the focusing adjusting module through a spatial light path or an optical fiber, so that the size and the weight of a laser processing component are reduced, and the stability of the system is improved.
Preferably, the laser processing sets parameters, the working distance of the laser range finder is 7-30 mm, the height resolution is 0.25um and below, the pulse frequency of the laser is 10 KHz-4 MHz, and every 103～105Measuring the surface height information of the primary crystal ingot by using the laser pulse, and adjusting the primary laser focusing depth, wherein the moving speed of the workpiece table is 10-1000 mm/s; the laser processing efficiency is reduced by adopting lower laser pulse frequency and sample stage moving speed, so that higher measuring point density can be ensured, and more accurate control on the thickness of the wafer can be obtained; the laser processing efficiency can be improved by adopting higher laser pulse frequency and sample stage moving speed, but the density of measuring points can be reduced, and the height measurement precision of the end face of the crystal ingot is reduced.
A laser processing control system for stripping crystal ingots comprises a main control module, wherein the main control module is used for controlling a laser processing module, a distance measuring module and a movable bearing module. The main control module can judge whether the height difference exceeds a preset allowable range according to the height difference data on the end face of the crystal ingot fed back by the ranging module, and if the height pole difference on the end face exceeds 10% of the target thickness of the wafer, the crystal ingot does not meet the processing requirement and the crystal ingot and the workpiece table need to be rechecked.
Due to the adoption of the technical scheme, the utility model has the remarkable technical effects that:
the height information of the end face of the crystal ingot is detected in real time by using a distance meter and fed back to a focusing adjusting module, the focusing adjusting module adjusts the focusing position of a laser spot for processing according to the height information, so that the depth of laser processing strictly tracks the upper surface of the crystal ingot, the distance between the laser focusing spot position and the upper surface of the crystal ingot is always kept consistent, the laser processing is finished by forming a continuous damage layer at a set depth without being influenced by the placement of the crystal ingot or the parallelism of the two end faces of the crystal ingot, and the total thickness deviation (TTV) of a stripped wafer is ensured to meet the requirements of subsequent epitaxy and device processes.
Furthermore, when the distance measuring module and the laser processing module are separately arranged at two working positions, and when the laser processing module performs laser processing on the end face of one crystal ingot, the distance measuring module can perform multi-point position detection on the end face of the other crystal ingot, and the obtained height information can be used for laser processing of the next working position. And because the distance measurement step and the laser processing step are relatively independent, the sampling frequency of the distance measurement and the processing frequency of the laser processing are not required to be considered, and compared with the method that the frequency matching of the distance measurement module and the laser processing module is required to be considered when the distance measurement module and the laser processing module are integrated, the integration difficulty and the system complexity of the system are greatly reduced.
Drawings
In order to more clearly illustrate the embodiments of the present invention or the technical solutions in the prior art, the drawings used in the description of the embodiments or the prior art will be briefly described below, and it is obvious that the drawings in the following description are only some embodiments of the present invention, and for those skilled in the art, other drawings can be obtained according to these drawings without creative efforts.
FIG. 1 is a schematic diagram of a laser lift-off device in the prior art;
fig. 2 is a schematic structural view of a laser processing apparatus for peeling an ingot according to embodiment 1 of the present invention;
fig. 3 is a schematic structural view of a laser processing apparatus for peeling an ingot according to embodiment 2 of the present invention;
FIG. 4 is a schematic diagram of the wafer TTV stabilization control in the laser lift-off technique proposed by the present invention;
FIG. 5 is a flow chart of the main control module determining the ingot height difference;
fig. 6 is a flow chart of an implementation of the laser lift-off technique proposed by the present invention.
Reference numbers in the drawings illustrate:
101. a crystal ingot to be stripped; 102. a laser damage layer; 103. particles; 201. a laser; 202. a laser range finder; 203. a focus adjustment module; 204. a displacement base workpiece stage; 205. rotating the base workpiece table; 206. a table frame.
Detailed Description
The present invention will be described in further detail with reference to examples, which are illustrative of the present invention and are not to be construed as being limited thereto.
Referring to fig. 1, the conventional laser lift-off technology usually performs only one mechanical positioning on an ingot 101 to be lifted off, and in the case that particles 103 exist on a workpiece base, a certain inclination angle exists on the end face of the ingot, and a continuous laser damage layer 102 formed at a set depth can cause the TTV of a wafer to deviate from a target range, and the parameters of the cut wafer are not qualified.
In order to solve the above technical problem, as shown in the block diagram of fig. 4, the technical solution of the present invention adds a laser range finder 202 to the prior art, and sends height information of a plurality of points on the upper surface of the ingot, which is obtained by the laser range finder 202, and target thickness information of a wafer required in a process menu to a focus adjustment module 203, and the focus adjustment module 203 changes the depth of focus of laser in real time to achieve the purpose of stable TTV control.
As shown in fig. 6, firstly, a laser 201 provides a pulse laser light source, the light source is focused to a preset focusing depth of an ingot 101 to be stripped through a focusing adjustment module 203, secondly, a carrying module can be moved to drive the ingot 101 to be stripped to translate, then, a distance measurement module 202 measures the height of the end face of the ingot 101 to be stripped, height information is fed back to the focusing adjustment module 203 through a main control module, finally, the focusing adjustment module 203 adjusts the height of laser focusing of the laser 201 to form a breaking point based on the height information of the end face of the ingot 101 to be stripped, and the above steps are repeated to form a continuous laser breaking layer at the set depth to complete laser processing, wherein the specific embodiment is as follows:
example 1
As shown in fig. 2, the present invention provides a laser processing apparatus for peeling off an ingot, comprising a laser 201, a laser range finder 202, a focus adjustment module 203, the ingot to be peeled 101, a displacement base workpiece stage 204, and a stage frame 206.
A laser processing device for stripping crystal ingots comprises a laser processing module, a distance measuring module and a movable bearing module, wherein the movable bearing module is positioned right below the laser processing module and the distance measuring module; the movable carrying module is used for carrying the crystal ingot to be stripped and adjusting the position of the crystal ingot to be stripped; the distance measurement module is used for measuring the height of the end face of the ingot to be stripped to obtain the height information of the end face of the ingot to be stripped; and the laser processing module adjusts the laser focusing height based on the height information of the end face of the ingot to be stripped and performs laser processing on the ingot to be stripped.
The distance measuring module is a laser distance measuring instrument 202, the laser distance measuring instrument 202 adopts an optical surface reflection type distance measuring mode, the measuring speed is in the millisecond level, and the height of the end face of the crystal ingot is measured at fixed frequency and fixed distance.
The laser processing module comprises a laser 201 and a focusing adjustment module 203, wherein the laser 201 is connected with the focusing adjustment module 203. And a laser 201 for providing a single wavelength pulse laser light source to form a damage point to the inside of the ingot. The focusing adjusting module 203 is a combination of a focusing lens, a reflector group and a spatial light modulator, and the focusing adjusting module 203 adjusts the laser focusing depth by receiving the measurement height of the end face of the crystal ingot sent by the laser range finder 202 through the main control module, so that the distance between the laser focusing spot position and the upper surface of the crystal ingot is always kept consistent.
The movable bearing module is a workbench which is used for bearing and adjusting the crystal ingot 101 to be stripped, the crystal ingot 101 to be stripped is arranged on a base workpiece table of the workbench, the base workpiece table of the workbench is a displacement base workpiece table 204 driven by a linear motor, and the distance measuring module and the laser processing module are integrated together and arranged in the workbench frame 206.
As shown in fig. 2, the ingot to be stripped 101 is placed and fixed on the displacement base workpiece table 204, the vacuum adsorption structure on the displacement base workpiece table 204 is vacuum-adsorbed and fixed on the ingot to be stripped 101, and the laser 201, the laser range finder 202 and the focusing adjustment module 203 are integrally arranged above the ingot to be stripped 101 for laser processing of the ingot to be stripped 101. Before laser processing, the focus adjustment module pre-calibrates the depth of focus of the laser according to the target thickness of the wafer in the desired process recipe.
In this embodiment, the specific parameters of laser processing are selected as follows: the laser wavelength of the laser 201 is 1064nm, the pulse width is 15ps, and the pulse frequency is 100 KHz. In other embodiments, the selectable pulse frequency is 10KHz, but may be 4MHz, preferably 100 KHz. The moving speed of the displacement base workpiece stage 204 is 100mm/s, and the optional moving speed is 10mm/s, or may be 1000mm/s, preferably 100 mm/s. Every 10 th4The height information of the surface of the ingot is measured once by each laser pulse, the adjustment of the laser focusing depth is carried out once, namely the height is measured once every 10mm, and the height measurement and the adjustment of the laser focusing depth in the processing process can realize synchronization.
As shown in fig. 2, the displacement base workpiece stage 204 drives the ingot 101 to be peeled to move into the lower part of the laser processing apparatus, firstly, the laser range finder 202 obtains the height information of the ingot 101 to be peeled at the current position, the height information of the upper surface of the ingot 101 to be peeled is sent to the focusing adjustment module 203 through the main control module, and the focusing adjustment module 203 adjusts the laser focusing position according to the pre-calibrated laser focusing depth and the information of the upper surface height of the ingot 101 to be peeled, so as to obtain a laser damage point of a point location.
By adjusting the movement rate of the displacement base workpiece table 204, the focusing depth can be adjusted again when the laser light spot moves to the next distance measuring point, laser processing is carried out according to the height information of the upper surface of the crystal ingot 101 to be stripped, and a continuous laser damage layer is formed at the set depth by scanning the end surface of the whole crystal ingot 101 to be stripped point by point to complete laser processing.
Example 2
Since the highest repetition frequency of laser processing is higher than the maximum sampling frequency of the distance meter and the maximum working frequency of the focus adjustment module, in order to ensure the sampling frequency of the ingot end face height measurement, in embodiment 1, the displacement rate of the displacement base workpiece stage 204 needs to be reduced while laser pulses with a lower repetition frequency are adopted, so that the working efficiency of embodiment 1 is lower.
In order to further improve the efficiency of laser processing, the present invention proposes a laser processing apparatus of embodiment 2.
As shown in fig. 3, the present embodiment provides a laser processing apparatus for peeling off an ingot, including a laser 201, a laser range finder 202, a focus adjustment module 203, the ingot to be peeled 101, a rotary base work stage 205, and a work stage frame 206.
In this embodiment, the movable carrying module is a rotating base workpiece stage 205, on which a set of working position units is disposed, the working position unit includes two working positions, one of the working positions is matched with the laser processing module, and the other working position is matched with the distance measuring module. When the laser processing device works, one working position in the working position units is positioned below the laser processing module, and the other working position is positioned below the distance measuring module.
In other embodiments, the movable carrying module may further include a plurality of groups of working bit units, and the plurality of groups of working bit units correspond to the plurality of groups of ranging modules and the laser processing module.
As shown in fig. 3, the ingot to be stripped 101 is placed and fixed on the working position of the rotating base workpiece stage 205, and the vacuum adsorption structure on the rotating base workpiece stage 205 is vacuum-adsorbed and fixed to the ingot to be stripped 101.
The laser processing module and the laser range finder 202 integrated by the laser 201 and the focusing adjustment module 203 are separately arranged and respectively arranged above two working positions of the workbench, and are respectively used for ranging and laser processing of the ingot to be stripped 101, so that before laser processing, the focusing adjustment module calibrates the focusing depth of laser in advance according to the thickness of a wafer to be stripped.
As shown in fig. 5, step S101 firstly measures height information of the upper end face of the ingot to be stripped 101 by the laser range finder 202, the laser range finder 202 sends the obtained height information to the main control module, step S102 judges whether the difference of the heights on the end faces exceeds 10% of the target thickness of the wafer by the main control module, if yes, the ingot to be stripped 101 needs to be re-checked and loaded according to step S103, and the above steps are repeated until the ingot to be stripped is qualified; and if the subsequent processing requirements are met, performing the processing step of S104.
As shown in fig. 3, after it is determined that the subsequent processing requirements are met, the rotary base workpiece stage 205 transfers the ingot 101 to be stripped to a laser processing working position, and the focusing adjustment module 203 at the lower part of the laser 201 modulates the depth of laser focusing according to the height information of the upper end face of the ingot 101 to be stripped, which is acquired by the main control module from the laser range finder 202, so that a damage layer formed after laser focusing is parallel to the upper end face of the ingot 101 to be stripped, and it is ensured that the TTV after processing is sufficiently small. After the previous crystal ingot enters the laser processing station through rotation, the other crystal ingot to be measured can be loaded on the station for measuring the height, so that the synchronous proceeding of laser processing and measurement is ensured, and the efficiency of laser processing is improved. And because laser processing and ranging are independently carried out, the laser processing can be carried out at the fastest speed and at the maximum repetition frequency, so that the whole ranging and laser processing period can be shortened.
In the embodiment, the distance measuring module and the laser processing module are respectively installed at the working positions at two sides of the workpiece table frame 206, wherein the laser distance measuring instrument 202 performs surface scanning on the end surface of the ingot 101 to be stripped to obtain the height distribution information of the end surface of the ingot, the laser distance measuring instrument detects that the height distribution is in a control range, the ingot can enter the laser processing station, and the focusing adjusting module 203 adjusts the depth of laser focusing in real time according to the height distribution information to realize the purpose of tracking the surface type of the upper surface of the ingot; when the height profile is outside the control range, the ingot is withdrawn by the system and the end face of the ingot is required to be re-machined or the table cleaned.
In this embodiment, the specific parameters of laser processing are selected as follows: the laser wavelength of the laser 201 is 1064nm, the pulse width is 15ps, and the pulse frequency is 400 KHz; in other embodiments, the selectable pulse frequency is 10KHz, or 4MHz, preferably 400 KHz; the displacement speed of the rotary base workpiece stage 205 is 500mm/s, and in other embodiments, the optional speed is 10mm/s, or may be 1000mm/s, and preferably 500 mm/s. When the area of the area to be laser processed is consistent, the moving speed of 500mm/s in example 2 can be increased by 5 times than 100mm/s in example 1, and the processing time is shortened to 30% of the original time (considering the acceleration and deceleration processes in the displacement process of the workpiece table, not just uniform movement).
In the first embodiment, the laser distance measuring device 202 still measures the height information every 10mm, with a sampling frequency (1KHz) of the order of milliseconds of the distance measuring device, for a square sample of 100mm by 100mm, the number of measurement points is 9 by 9 to 81, when the workpiece stage is at the measurement station, the displacement rate can be set in a slower range, preferably 100mm/s, and the measurement time for completing the square sample is the sum of the displacement time and the sampling time of the distance measuring device, and is expected to be in the range of 10 seconds to 100 seconds, which can be synchronized with the laser processing time or less than the laser processing time.
Because the difference of the sampling frequency (1KHz) measured by the existing module and the processing frequency (400KHz) of laser is more than 100 times, the laser processing station and the measuring station are separated, the reasonable moving speed of the workpiece table can be set according to respective requirements, the laser processing repetition frequency is high, the moving speed is high, the highly-measured repetition frequency is low, the moving speed is low, the problem that the sampling quantity is guaranteed to be measured and the laser processing efficiency is reduced in embodiment 1 is avoided, the synchronous processing of laser processing and measurement is realized, and the system efficiency of the whole laser processing is improved.
In addition, it should be noted that, in this embodiment, the laser of the laser processing module may be disposed outside the entire component, and the laser is guided into the focusing adjustment module through a spatial optical path or an optical fiber when disposed outside, so as to reduce the size and weight of the laser processing component, and particularly, when a high-power laser is used, a certain advantage is exhibited, which is helpful for improving the stability of the mechanical structure of the system.
The foregoing is merely a preferred embodiment of the present application and is not intended to limit the present application in any way, and the details of the embodiment may be different from the others, such as the shape of the components, the names of the components, etc. All equivalent or simple changes of the structure, the characteristics and the principle of the utility model which are described in the patent conception of the utility model are included in the protection scope of the patent of the utility model. Various modifications, additions and substitutions for the specific embodiments described may be made by those skilled in the art without departing from the scope of the utility model as defined in the accompanying claims.
Claims (10)
1. A laser processing device for stripping crystal ingots is characterized by comprising a laser processing module, a distance measuring module and a movable bearing module, wherein the movable bearing module is positioned right below the laser processing module and the distance measuring module;
the movable carrying module is used for carrying the crystal ingot to be stripped and adjusting the position of the crystal ingot to be stripped;
the distance measurement module is used for measuring the height of the end face of the ingot to be stripped to obtain the height information of the end face of the ingot to be stripped;
and the laser processing module adjusts the laser focusing height based on the height information of the end face of the ingot to be stripped and performs laser processing on the ingot to be stripped.
2. A laser processing apparatus for pulling off an ingot as set forth in claim 1, wherein the movable carrying module is provided with at least one set of working bit units, each set of working bit units comprising two working bits, the ranging module and the laser processing module are provided separately, and the laser processing module is engaged with one of the working bits and the ranging module is engaged with the other working bit.
3. A laser processing apparatus for stripping an ingot as set forth in claim 2 wherein in operation one of the stations is located directly below the laser processing module and the other station is located directly below the ranging module.
4. A laser processing apparatus for stripping an ingot as set forth in claim 2 wherein the movable carrier module is a rotary table, the work station is disposed on the rotary table, the corresponding work station of the rotary table is provided with a base work station, and the base work station is a displacement base work station or a rotary base work station.
5. A laser processing apparatus for pulling off an ingot as set forth in claim 1, wherein the ranging module is a laser range finder or a white light interference range finder.
6. A laser processing apparatus for pulling off an ingot as set forth in claim 1, wherein the laser processing module comprises a laser cooperating with the focus adjustment module, the laser for providing laser light, and the focus adjustment module for adjusting a depth of focus of the laser light.
7. A laser processing apparatus for pulling off an ingot as set forth in claim 6, wherein the laser is integrated with the focus adjustment module.
8. A laser processing apparatus for stripping an ingot as set forth in claim 6 wherein the focus adjustment module is any one or a combination of two of a servo motor driven lens-mirror optical path combination or a spatial light modulator.
9. A laser processing apparatus for pulling off an ingot as set forth in claim 6 wherein the laser is a single wavelength pulse laser.
10. A laser processing control system for peeling an ingot, comprising the laser processing apparatus for peeling an ingot of any one of claims 1 to 9, further comprising a main control module for controlling the laser processing module, the distance measuring module and the movable carrying module.
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Assignee: Suzhou Heyu Finance Leasing Co.,Ltd. Assignor: Hangzhou Qianjing Semiconductor Co.,Ltd. Contract record no.: X2023980048824 Denomination of utility model: A laser processing device and control system for peeling crystal ingots Granted publication date: 20220426 License type: Exclusive License Record date: 20231201 |
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Denomination of utility model: A laser processing device and control system for peeling crystal ingots Effective date of registration: 20231206 Granted publication date: 20220426 Pledgee: Suzhou Heyu Finance Leasing Co.,Ltd. Pledgor: Hangzhou Qianjing Semiconductor Co.,Ltd. Registration number: Y2023980069375 |
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| CP03 | Change of name, title or address |
Address after: Building 1, No. 78 Donggang Eighth Road, Quzhou City, Zhejiang Province, China 324022 Patentee after: Zhejiang Caizi Technology Co.,Ltd. Country or region after: China Address before: 311200 room 205-2, building 1, Information Port Phase V, No. 733, Jianshe Third Road, Xiaoshan District, Hangzhou, Zhejiang Province Patentee before: Hangzhou Qianjing Semiconductor Co.,Ltd. Country or region before: China |