CN216328599U - 一种二极管生产用半导体硅片裁切装置 - Google Patents
一种二极管生产用半导体硅片裁切装置 Download PDFInfo
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- CN216328599U CN216328599U CN202122443365.XU CN202122443365U CN216328599U CN 216328599 U CN216328599 U CN 216328599U CN 202122443365 U CN202122443365 U CN 202122443365U CN 216328599 U CN216328599 U CN 216328599U
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- 229910052710 silicon Inorganic materials 0.000 title claims abstract description 58
- 239000010703 silicon Substances 0.000 title claims abstract description 58
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 title claims abstract description 57
- 238000005520 cutting process Methods 0.000 title claims abstract description 51
- 238000004519 manufacturing process Methods 0.000 title claims abstract description 15
- 239000004065 semiconductor Substances 0.000 title claims abstract description 14
- 230000007246 mechanism Effects 0.000 claims abstract description 19
- 238000001816 cooling Methods 0.000 claims abstract description 9
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims description 8
- 239000000741 silica gel Substances 0.000 claims description 8
- 229910002027 silica gel Inorganic materials 0.000 claims description 8
- 230000000694 effects Effects 0.000 abstract description 5
- 239000000428 dust Substances 0.000 description 5
- 238000010586 diagram Methods 0.000 description 3
- 230000008859 change Effects 0.000 description 2
- BUGBHKTXTAQXES-UHFFFAOYSA-N Selenium Chemical compound [Se] BUGBHKTXTAQXES-UHFFFAOYSA-N 0.000 description 1
- 230000009286 beneficial effect Effects 0.000 description 1
- 230000007812 deficiency Effects 0.000 description 1
- 229910052732 germanium Inorganic materials 0.000 description 1
- GNPVGFCGXDBREM-UHFFFAOYSA-N germanium atom Chemical compound [Ge] GNPVGFCGXDBREM-UHFFFAOYSA-N 0.000 description 1
- 238000010030 laminating Methods 0.000 description 1
- 238000003698 laser cutting Methods 0.000 description 1
- 239000000463 material Substances 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 229910052711 selenium Inorganic materials 0.000 description 1
- 239000011669 selenium Substances 0.000 description 1
- 150000003376 silicon Chemical class 0.000 description 1
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Effective date of registration: 20240606 Address after: 518000, Building A, Nanxian Commercial Plaza, Nanyuan New Village, Beizhan Community, Minzhi Street, Longhua District, Shenzhen City, Guangdong Province 608 Patentee after: Shenzhen Xiye Technology Co.,Ltd. Country or region after: China Address before: 215000 1005, building 38, No. 60, Weixin Road, Suzhou Industrial Park, Jiangsu Province Patentee before: Suzhou beiteli Electronic Technology Co.,Ltd. Country or region before: China |