CN216283306U - Object three-dimensional appearance measuring device - Google Patents

Object three-dimensional appearance measuring device Download PDF

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CN216283306U
CN216283306U CN202122493705.XU CN202122493705U CN216283306U CN 216283306 U CN216283306 U CN 216283306U CN 202122493705 U CN202122493705 U CN 202122493705U CN 216283306 U CN216283306 U CN 216283306U
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Gaoshi Technology Suzhou Co ltd
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Gaoshi Technology Suzhou Co ltd
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Abstract

The utility model discloses an object three-dimensional shape measuring device.A first semiconductor laser and a second semiconductor laser emit two beams of laser which satisfy spatial orthogonality, and the two beams of laser are incident to the same point on the surface to be measured of an object to be measured; the surface to be measured reflects two beams of light to the first imaging lens and the second imaging lens respectively, and the two beams of light are focused and then enter the first position sensitive detector and the second position sensitive detector respectively. The two beams of laser are simultaneously incident to the same point of the surface to be measured, the position information of the same point in two directions is obtained through the two position sensitive detectors, the data on the two position sensitive detectors are decomposed into the relative height of a measuring area and the spatial inclination direction of a measuring surface, and the two data of the height of the feature and the two data of the inclination direction of the measuring surface can be separated after calculation. Compared with the traditional measuring device which can only measure the height information of the three-dimensional topography, the measuring device has higher measuring precision.

Description

Object three-dimensional appearance measuring device
Technical Field
The utility model relates to the field of three-dimensional shape detection, in particular to a device for measuring the three-dimensional shape of an object.
Background
With the development of semiconductor technology and high-precision instruments and equipment, the requirement for detecting the 3d shape of the surface of a semiconductor device in the production process is greatly improved.
The PSD is a position-sensing photoelectric device, has the characteristics of high sensitivity and high response, and is commonly used for detecting the target space position. In the optical measurement device in the prior art, a PSD detector is usually used to obtain the light spot condition of a point to be measured on a measurement surface, and height information of the surface is obtained according to the light spot condition. However, the surface topography of the semiconductor device is extremely high, and the detection requirements of the semiconductor device cannot be met only by height detection.
Therefore, it is necessary to improve the accuracy of the measuring device to solve the above problems.
SUMMERY OF THE UTILITY MODEL
In order to overcome the problems of the dust filtering method, the utility model provides an object three-dimensional shape measuring device, which solves the technical problem of inaccurate object three-dimensional measurement in the traditional method.
The utility model provides a device for measuring the three-dimensional appearance of an object to solve the technical problems, which comprises a first semiconductor laser, a second semiconductor laser, a first imaging lens, a second imaging lens, a first position sensitive detector and a second position sensitive detector;
the two beams of laser emitted by the first semiconductor laser and the second semiconductor laser meet the requirement of spatial orthogonality, and the two beams of laser are incident to the same point on the surface to be measured of the object to be measured;
the surface to be measured reflects two beams of light to the first imaging lens and the second imaging lens respectively, and the two beams of light are focused and then enter the first position sensitive detector and the second position sensitive detector respectively.
Further, the device also comprises a first collimating lens and a first focusing lens;
the laser emitted by the first semiconductor laser firstly enters the first focusing lens after being collimated by the first collimating lens, and then enters the surface to be measured of the object to be measured after passing through the first focusing lens.
Further, the device also comprises a second collimating lens and a second focusing lens;
and laser emitted by the second semiconductor laser firstly enters the second focusing lens after being collimated by the second collimating lens, and then enters the surface to be measured of the object to be measured after passing through the second focusing lens.
Further, the central wavelengths of the first semiconductor laser and the second semiconductor laser are 488-535 nm.
Further, the diameters of the laser beams emitted by the first semiconductor laser and the second semiconductor laser are 0.45 mm.
Further, the incident angles of the laser beams emitted by the first semiconductor laser and the second semiconductor laser on the surface to be measured are the same.
Further, the incidence angle of the laser beams emitted by the first semiconductor laser and the second semiconductor laser on the surface to be measured is 25-75 degrees.
Further, the laser beams emitted by the first semiconductor laser and the second semiconductor laser have a spot diameter of 2 μm measured on the surface to be measured.
One of the above technical solutions has the following advantages or beneficial effects: the two beams of laser are simultaneously incident to the same point of the surface to be measured, the position information of the same point in two directions is obtained through the two position sensitive detectors, the data on the two position sensitive detectors are decomposed into the relative height of a measuring area and the spatial inclination direction of a measuring surface, and the two data of the height of the feature and the two data of the inclination direction of the measuring surface can be separated after calculation. Compared with the traditional measuring device which can only measure the height information of the three-dimensional topography, the measuring device has higher measuring precision.
Drawings
In order to more clearly illustrate the technical solution of the embodiments of the present invention, the drawings of the embodiments will be briefly described below, and it is apparent that the drawings in the following description relate only to some embodiments of the present invention and are not limiting thereof, wherein:
FIG. 1 is a schematic structural diagram of an apparatus for measuring three-dimensional topography of an object according to the present invention;
FIG. 2 is a three-dimensional schematic view of measurement data fitting of an apparatus for measuring the three-dimensional topography of an object according to the present invention.
The figure is marked with: 1. a first semiconductor laser; 2. a first collimating lens; 3. a first focusing lens; 4. a second semiconductor laser; 5. a second collimating lens; 6. a second focusing lens; 7. a first imaging lens; 8. a second imaging lens; 9. a first position sensitive detector; 10. a second position sensitive detector; 11. an analyte.
Detailed Description
The technical solutions in the embodiments of the present invention will be described clearly and completely with reference to the accompanying drawings in the embodiments of the present invention, and it is obvious that the described embodiments are only a part of the embodiments of the present invention, and not all of the embodiments. All other embodiments, which can be obtained by a person skilled in the art without any inventive step based on the embodiments of the present invention, are within the scope of the present invention.
In the drawings, the shape and size may be exaggerated for clarity, and the same reference numerals will be used throughout the drawings to designate the same or similar components.
Unless defined otherwise, technical or scientific terms used herein shall have the ordinary meaning as understood by one of ordinary skill in the art to which this invention belongs. The use of "first," "second," and similar terms in the description and claims of the present application do not denote any order, quantity, or importance, but rather the terms are used to distinguish one element from another. Also, the use of the terms "a," "an," or "the" and similar referents do not denote a limitation of quantity, but rather denote the presence of at least one. The word "comprise" or "comprises", and the like, means that the element or item listed before "comprises" or "comprising" covers the element or item listed after "comprising" or "comprises" and its equivalents, and does not exclude other elements or items. "upper", "lower", "left", "right", and the like are used merely to indicate relative positional relationships, and when the absolute position of the object being described is changed, the relative positional relationships may also be changed accordingly.
In the following description, terms such as center, thickness, height, length, front, back, rear, left, right, top, bottom, upper, lower, etc., are defined with respect to the configurations shown in the respective drawings, and in particular, "height" corresponds to a dimension from top to bottom, "width" corresponds to a dimension from left to right, "depth" corresponds to a dimension from front to rear, which are relative concepts, and thus may be varied accordingly depending on the position in which it is used, and thus these or other orientations should not be construed as limiting terms.
Terms concerning attachments, coupling and the like (e.g., "connected" and "attached") refer to a relationship wherein structures are secured or attached, either directly or indirectly, to one another through intervening structures, as well as both movable or rigid attachments or relationships, unless expressly described otherwise.
As shown in fig. 1-2, an apparatus for measuring a three-dimensional topography of an object includes a first semiconductor laser 1, a first collimating lens 2, a first focusing lens 3, a second semiconductor laser 4, a second collimating lens 5, a second focusing lens 6, a first imaging lens 7, a second imaging lens 8, a first position sensitive detector 9, and a second position sensitive detector 10.
The two laser beams emitted by the first semiconductor laser 1 and the second semiconductor laser 4 meet the requirement of spatial orthogonality, and the two laser beams are incident to the same point on the surface to be measured of the object to be measured 11; two beams of light are reflected by the surface to be measured and respectively enter the first imaging lens 7 and the second imaging lens 8, and are focused and respectively enter the first position sensitive detector 9 and the second position sensitive detector 10.
Specifically, laser light emitted by the first semiconductor laser 1 is collimated by the first collimating lens 2, enters the first focusing lens 3, and is incident on the surface to be measured of the object to be measured 11 after passing through the first focusing lens 3.
The laser light emitted by the second semiconductor laser 4 is collimated by the second collimating lens 5, enters the second focusing lens 6, and is incident to the surface to be measured of the object to be measured 11 after passing through the second focusing lens 6.
The center wavelengths of the first semiconductor laser 1 and the second semiconductor laser 4 are 488-535 nm. The diameters of the laser beams emitted by the first semiconductor laser 1 and the second semiconductor laser 4 are 0.45 mm.
The incident angles of the laser beams emitted by the first semiconductor laser 1 and the second semiconductor laser 4 on the surface to be measured are the same. The incidence angles of the laser beams emitted by the first semiconductor laser 1 and the second semiconductor laser 4 on the surface to be measured are 25-75 degrees. Preferably 60 degrees.
The laser beams emitted by the first semiconductor laser 1 and the second semiconductor laser 4 have a spot diameter of 2 μm measured on the surface to be measured.
The feature on the surface to be measured of the object 11 to be measured can be decomposed into the relative height of the region to be measured and the spatial inclination direction of the measuring surface, the change of the two features can cause the change of the gravity center position of the light spot on the PSD, but the change of the light spot position on the PSD is the result of the combined action of the two features, two beams of orthogonal lasers are used for simultaneously measuring the feature information of the same position, and two feature parameters in the height of the feature and the inclination direction of the measuring surface can be separated through calculation. And the three-dimensional morphology can be more accurately restored, represented and fitted according to the obtained height information matrix and the inclination information matrix.
Specifically, the first laser beam and the second laser beam respectively pass through the first focusing lens 3 and the second focusing lens 6, meet the spatial orthogonality and are incident to the same point on the surface to be measured;
a measured point on the surface to be measured reflects a first laser beam and a second laser beam to a first imaging lens 7 and a second imaging lens 8 respectively, and the first laser beam and the second laser beam are incident to a first position sensitive detector 9 and a second position sensitive detector 10 respectively;
based on the point coordinates P obtained by the first position-sensitive detector 101Point coordinates P obtained by the second position-sensitive detector 92An object image transformation matrix of the imaging lens is M and a displacement matrix H1、H2To obtain a displacement matrix H1、H2And the slope information matrix S1、S2Point coordinates P obtained from the first position sensitive detector1The first stepPoint coordinate P obtained by two position sensitive detector2A relation model (12) and a relation model (13) between the object image transformation matrix of the imaging lens M and the coordinates W of the measured point on the measured surface:
P1=M·(S1·W+H1) (12)
P2=M·(S2·W+H2) (13)
H1and H2The same; the object image transformation matrix of the imaging lens is:
Figure BDA0003305698870000041
f is focal length, d is lens thickness, h1For the distance of the detection point from the front surface of the imaging lens, h2Is the distance of the imaging lens from the position detector;
wherein the content of the first and second substances,
Figure BDA0003305698870000051
in (C) XW,YW,ZWIs the coordinate of the measured point on the measured surface, XWAnd YWIs known;
solving S based on the relation model (12) and the relation model (13)1、S2W; the inclination information matrixes S1 and S2 comprise an angle phi of the rotation of a measured point around an X axis, an angle beta of the rotation of the measured point around a Y axis and an angle theta around a Z axis; z in WWRepresenting height information of a measured point;
according to height information and inclination information S of a plurality of measured points1、S2And reducing the three-dimensional appearance of the surface to be detected.
The two beams of laser are simultaneously incident to the same point of the surface to be measured, the position information of the same point in two directions is obtained through the two position sensitive detectors, the data on the two position sensitive detectors are decomposed into the relative height of a measuring area and the spatial inclination direction of a measuring surface, and the two data of the height of the feature and the two data of the inclination direction of the measuring surface can be separated after calculation. Compared with the traditional measuring device which can only measure the height information of the three-dimensional topography, the measuring device has higher measuring precision.
The number of apparatuses and the scale of the process described herein are intended to simplify the description of the present invention. Applications, modifications and variations of the present invention will be apparent to those skilled in the art.
The features of the different implementations described herein may be combined to form other embodiments not specifically set forth above. The components may be omitted from the structures described herein without adversely affecting their operation. Further, various individual components may be combined into one or more individual components to perform the functions described herein.
Furthermore, while embodiments of the utility model have been described above, it is not limited to the applications set forth in the description and the embodiments, which are fully applicable in a variety of fields of endeavor to which the utility model pertains, and further modifications may readily be made by those skilled in the art, it being understood that the utility model is not limited to the details shown and described herein without departing from the general concept defined by the appended claims and their equivalents.

Claims (8)

1. The device for measuring the three-dimensional appearance of the object is characterized by comprising a first semiconductor laser (1), a second semiconductor laser (4), a first imaging lens (7), a second imaging lens (8), a first position sensitive detector (9) and a second position sensitive detector (10);
the two laser beams emitted by the first semiconductor laser (1) and the second semiconductor laser (4) meet the requirement of spatial orthogonality, and the two laser beams are incident to the same point on the surface to be measured of the object to be measured (11);
two beams of light are reflected by the surface to be measured and respectively enter a first imaging lens (7) and a second imaging lens (8), and are focused and then respectively enter a first position sensitive detector (9) and a second position sensitive detector (10).
2. The apparatus for measuring the three-dimensional topography of an object according to claim 1, further comprising a first collimating lens (2), a first focusing lens (3);
laser emitted by the first semiconductor laser (1) enters the first focusing lens (3) after being collimated by the first collimating lens (2), and is incident to the surface to be measured of the object to be measured (11) after passing through the first focusing lens (3).
3. The apparatus for measuring the three-dimensional topography of an object according to claim 1, further comprising a second collimating lens (5) and a second focusing lens (6);
the laser emitted by the second semiconductor laser (4) firstly enters the second focusing lens (6) after being collimated by the second collimating lens (5), and then enters the surface to be measured of the object to be measured (11) after passing through the second focusing lens (6).
4. The apparatus according to claim 1, wherein the first semiconductor laser (1) and the second semiconductor laser (4) have center wavelengths of 488-535 nm.
5. The apparatus according to claim 1, wherein the first semiconductor laser (1) and the second semiconductor laser (4) emit laser beams having a diameter of 0.45 mm.
6. The apparatus according to claim 1, wherein the laser beams emitted by the first semiconductor laser (1) and the second semiconductor laser (4) have the same incident angle on the surface to be measured.
7. The apparatus according to claim 1, wherein the laser beams emitted by the first semiconductor laser (1) and the second semiconductor laser (4) have an incident angle of 25-75 degrees on the surface to be measured.
8. The apparatus for measuring the three-dimensional topography of an object according to claim 1, wherein the first semiconductor laser (1) and the second semiconductor laser (4) emit laser beams having a spot diameter of 2 μm on the surface to be measured.
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Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN115077424A (en) * 2022-07-15 2022-09-20 南昌昂坤半导体设备有限公司 Real-time wafer surface curvature detection device and method

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN115077424A (en) * 2022-07-15 2022-09-20 南昌昂坤半导体设备有限公司 Real-time wafer surface curvature detection device and method
CN115077424B (en) * 2022-07-15 2022-11-04 南昌昂坤半导体设备有限公司 Real-time wafer surface curvature detection device and method

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Address after: 215000 building 11, No. 198, Jialingjiang Road, high tech Zone, Suzhou, Jiangsu

Patentee after: Gaoshi Technology (Suzhou) Co.,Ltd.

Address before: 215000 building 11, No. 198, Jialingjiang Road, high tech Zone, Suzhou, Jiangsu

Patentee before: Gaoshi Technology (Suzhou) Co.,Ltd.